CN103022997B - Electrostatic discharge protective equipment - Google Patents
Electrostatic discharge protective equipment Download PDFInfo
- Publication number
- CN103022997B CN103022997B CN201110289658.5A CN201110289658A CN103022997B CN 103022997 B CN103022997 B CN 103022997B CN 201110289658 A CN201110289658 A CN 201110289658A CN 103022997 B CN103022997 B CN 103022997B
- Authority
- CN
- China
- Prior art keywords
- pass transistor
- nmos pass
- electrically connected
- weld pad
- electrostatic discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The invention relates to a kind of electrostatic discharge protective equipment, be electrically connected between weld pad and internal circuit, and comprise electric capacity, the first resistance, voltage drop element and nmos pass transistor.The first end of electric capacity is electrically connected weld pad.The first end of the first resistance is electrically connected the second end of electric capacity, and the second end of the first resistance is electrically connected to earth terminal.Nmos pass transistor and voltage drop element are serially connected between weld pad and earth terminal, and the grid of nmos pass transistor is electrically connected the second end of electric capacity, and the source electrode of nmos pass transistor is electrically connected to earth terminal.The present invention utilizes the series connection structure of nmos pass transistor and voltage drop element to be not easily triggered to cause nmos pass transistor.Although the rise time of input signal diminishes like this, the input signal being coupled to the grid of nmos pass transistor also incites somebody to action not easily trigger NMOS transistor.By this, the present invention can be applied in the integrated circuit of high speed operation, and the leakage current in electrostatic discharge protective equipment also can be lowered.
Description
Technical field
The present invention relates to a kind of electrostatic discharge protective equipment, particularly relate to a kind of grid coupling electrostatic discharge protective equipment.
Background technology
Along with cmos semiconductor technique enters the size of deep-sub-micrometer (deepsub-micron), the technology of many advanced persons is used, to reduce the size of element and to possess the characteristic of element, such as: thinner grid oxic horizon, shorter passage length, more shallow junction depth (junctiondepth), light doped-drain (Lightly-DopedDrain, be called for short LDD) structure and auto-alignment metal silicide (Self-alignedSilicide is called for short Salicide) structure ... etc.But the technology of above-mentioned advanced person causes the protective capacities of integrated circuit to static discharge (electrostaticdischarge is called for short ESD) to decline many also.Therefore, how to strengthen element opposing ESD ability, be deep-sub-micrometer element in design institute for solution a problem.
Generally speaking, existing integrated circuit all at constrained input pin configuration electrostatic discharge protective equipment, can damage in response to static discharge phenomenon to prevent integrated circuit.Electrostatic discharge protective equipment has the design of many kinds, and wherein a kind of common circuit is exactly grid coupling (gate-coupled) electrostatic discharge protective equipment.Under this kind of framework, electrostatic discharge protective equipment comprises the nmos pass transistor be connected between weld pad and earth terminal, and the grid of nmos pass transistor adds grid Coupling Design.By this, when electrostatic discharge event occurs, the electrostatic signal from weld pad will impel nmos pass transistor conducting, and then produces a discharge path by electrostatic signal conducting to earth terminal.
On the other hand, when internal circuit normal running, electrostatic discharge protective equipment must close (turnoff) nmos pass transistor, to avoid the generation of leakage current.But in practical application, when the rise time of the input signal from weld pad shortens, nmos pass transistor often cannot fully be closed, and then increase the leakage current in device.In other words, existing grid coupling electrostatic discharge protective equipment cannot be applied in the integrated circuit of high speed operation.
As can be seen here, above-mentioned existing electrostatic discharge protective equipment with in use in structure, obviously still has inconvenience and defect, and is urgently further improved.In order to solve above-mentioned Problems existing, relevant manufactures there's no one who doesn't or isn't seeks solution painstakingly, but have no applicable design for a long time to be completed by development, and common product does not have appropriate structure to solve the problem, this is obviously the anxious problem for solving of relevant dealer always.Therefore how to found a kind of electrostatic discharge protective equipment of new structure, one of current important research and development problem of real genus, also becomes the target that current industry pole need be improved.
Summary of the invention
Main purpose of the present invention is; overcome the defect that existing electrostatic discharge protective equipment exists; and a kind of electrostatic discharge protective equipment of new structure is provided; technical problem to be solved makes it utilize the series connection structure of nmos pass transistor and voltage drop element to be not easily triggered to cause nmos pass transistor; and then cause electrostatic discharge protective equipment can be applied in the integrated circuit of high speed operation, be very suitable for practicality.
Another object of the present invention is to; overcome the defect that existing electrostatic discharge protective equipment exists; and a kind of electrostatic discharge protective equipment of new structure is provided; technical problem to be solved makes it can be triggered when internal circuit normal running in order to avoid nmos pass transistor; to reduce the leakage current in electrostatic discharge protective equipment, thus be more suitable for practicality.
The object of the invention to solve the technical problems realizes by the following technical solutions.According to a kind of electrostatic discharge protective equipment that the present invention proposes; be electrically connected between weld pad and internal circuit; wherein internal circuit receives input signal by weld pad, and electrostatic discharge protective equipment comprises electric capacity, the first resistance, voltage drop element and nmos pass transistor.The first end of electric capacity is electrically connected weld pad.The first end of the first resistance is electrically connected the second end of electric capacity, and the second end of the first resistance is electrically connected to earth terminal.Nmos pass transistor and voltage drop element are serially connected between weld pad and earth terminal, and the grid of nmos pass transistor is electrically connected the second end of electric capacity, and the source electrode of nmos pass transistor is electrically connected to earth terminal.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid electrostatic discharge protective equipment, the drain electrode of wherein said nmos pass transistor is electrically connected weld pad, and the source electrode of nmos pass transistor is electrically connected to earth terminal by voltage drop element.
Aforesaid electrostatic discharge protective equipment, wherein said voltage drop element comprises the first diode, and the anode of the first diode is electrically connected the source electrode of nmos pass transistor, and the negative electrode of the first diode is electrically connected to earth terminal.
Aforesaid electrostatic discharge protective equipment, wherein said voltage drop element comprise multiple second diode, and described multiple second diode is serially connected between the source electrode of nmos pass transistor and earth terminal.
Aforesaid electrostatic discharge protective equipment; wherein said voltage drop element comprises one second resistance; and the first end of this second resistance is electrically connected the source electrode of this nmos pass transistor; second end of this second resistance is electrically connected this earth terminal, wherein larger than the resistance value of this second resistance more than 100 times of the resistance value of this first resistance.
Aforesaid electrostatic discharge protective equipment, the first end of wherein said voltage drop element is electrically connected weld pad, and the second end of voltage drop element is electrically connected the drain electrode of nmos pass transistor, and the source electrode of nmos pass transistor is electrically connected to earth terminal.
Aforesaid electrostatic discharge protective equipment, wherein said voltage drop element comprises the 3rd diode.Wherein, the anode of the 3rd diode is electrically connected weld pad, and the negative electrode of the 3rd diode is electrically connected the drain electrode of nmos pass transistor, and the source electrode of nmos pass transistor is electrically connected to earth terminal.
Aforesaid electrostatic discharge protective equipment, wherein said voltage drop element comprises multiple 4th diode, and those the 4th diodes are serially connected between this weld pad and drain electrode of this nmos pass transistor.
Aforesaid electrostatic discharge protective equipment; wherein said voltage drop element comprises one the 3rd resistance; and the first end of the 3rd resistance is electrically connected this weld pad; second end of the 3rd resistance is electrically connected the drain electrode of this nmos pass transistor, wherein larger than the resistance value of the 3rd resistance more than 100 times of the resistance value of this first resistance.
Aforesaid electrostatic discharge protective equipment, wherein said electric capacity and this first resistance form a time of delay, and the rise time of this input signal is greater than this time of delay, are greater than the rise time of the electrostatic signal from this weld pad this time of delay.
The object of the invention to solve the technical problems also realizes by the following technical solutions.According to a kind of electrostatic discharge protective equipment that the present invention proposes; be electrically connected between weld pad and internal circuit; wherein internal circuit receives input signal by weld pad, and electrostatic discharge protective equipment comprises electric capacity, the first resistance, voltage drop element and nmos pass transistor.First resistance and capacitance series are between weld pad and earth terminal.The drain electrode of nmos pass transistor is electrically connected weld pad, and the grid of nmos pass transistor is electrically connected the connected node between electric capacity and the first resistance, and the source electrode of nmos pass transistor is electrically connected to earth terminal.Voltage drop element is electrically connected between the source electrode of nmos pass transistor and earth terminal.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid electrostatic discharge protective equipment, wherein said voltage drop element comprises one first diode, and the anode of this first diode is electrically connected the source electrode of this nmos pass transistor, and the negative electrode of this first diode is electrically connected this earth terminal.
Aforesaid electrostatic discharge protective equipment, wherein said voltage drop element comprises multiple second diode, and those second diodes are serially connected between the source electrode of this nmos pass transistor and this earth terminal.
Aforesaid electrostatic discharge protective equipment, wherein said electric capacity and this first resistance form a time of delay, and the rise time of this input signal is greater than this time of delay, are greater than the rise time of the electrostatic signal from this weld pad this time of delay.
The present invention compared with prior art has obvious advantage and beneficial effect.By technique scheme, electrostatic discharge protective equipment of the present invention at least has following advantages and beneficial effect: the present invention utilizes the series connection structure of nmos pass transistor and voltage drop element to be not easily triggered to cause nmos pass transistor.Thus, although the rise time of input signal diminishes, the input signal being coupled to the grid of nmos pass transistor also incites somebody to action not easily trigger NMOS transistor.By this, electrostatic discharge protective equipment can be applied in the integrated circuit of high speed operation, and the leakage current in electrostatic discharge protective equipment also can be lowered.
In sum, the invention relates to a kind of electrostatic discharge protective equipment, be electrically connected between weld pad and internal circuit, and comprise electric capacity, the first resistance, voltage drop element and nmos pass transistor.The first end of electric capacity is electrically connected weld pad.The first end of the first resistance is electrically connected the second end of electric capacity, and the second end of the first resistance is electrically connected to earth terminal.Nmos pass transistor and voltage drop element are serially connected between weld pad and earth terminal, and the grid of nmos pass transistor is electrically connected the second end of electric capacity, and the source electrode of nmos pass transistor is electrically connected to earth terminal.The present invention has significant progress technically, and has obvious good effect, is really a new and innovative, progressive, practical new design.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to technological means of the present invention can be better understood, and can be implemented according to the content of specification, and can become apparent to allow above and other object of the present invention, feature and advantage, below especially exemplified by preferred embodiment, and coordinate accompanying drawing, be described in detail as follows.
Accompanying drawing explanation
Figure 1A is the circuit diagram of the electrostatic discharge protective equipment according to one embodiment of the invention.
Figure 1B and Fig. 1 C is the circuit diagram of the electrostatic discharge protective equipment according to another embodiment of the present invention respectively.
Fig. 2 A is the circuit diagram of the electrostatic discharge protective equipment according to another embodiment of the present invention.
Fig. 2 B and Fig. 2 C is the circuit diagram of the electrostatic discharge protective equipment according to another embodiment of the present invention respectively.
100,200: electrostatic discharge protective equipment
101,201: weld pad
102,202: internal circuit
VD1, VD2: supply voltage
C1, C2: electric capacity
R11, R12, R13, R21, R22, R23: resistance
M1, M2:NMOS transistor
110,110 ', 110 ", 210,210 ', 210 ": voltage drop element
D1, D21 ~ D2n, D3, D41 ~ D4n: diode
N1, N2: connected node
Embodiment
For further setting forth the present invention for the technological means reaching predetermined goal of the invention and take and effect; below in conjunction with accompanying drawing and preferred embodiment; to its embodiment of electrostatic discharge protective equipment proposed according to the present invention, structure, feature and effect thereof, be described in detail as follows.
Aforementioned and other technology contents, Characteristic for the present invention, can know and present in the detailed description of following cooperation with reference to graphic preferred embodiment.By the explanation of embodiment, should to the present invention for the technological means reaching predetermined object and take and effect obtain one more deeply and concrete understanding, but institute's accompanying drawings is only to provide with reference to the use with explanation, is not used for being limited the present invention.
Figure 1A is the circuit diagram of the electrostatic discharge protective equipment according to one embodiment of the invention.Refer to shown in Figure 1A, electrostatic discharge protective equipment 100 is electrically connected weld pad 101, and is electrically connected to internal circuit 102 by resistance R12.Electrostatic discharge protective equipment 100 causes damage to internal circuit 102 in order to avoid the electrostatic signal from weld pad 101.Wherein, when internal circuit 102 normal running, under internal circuit 102 operates in supply voltage VD1, and input signal is received by weld pad 101.
Electrostatic discharge protective equipment 100 comprises electric capacity C1, resistance R11, nmos pass transistor M1 and voltage drop element 110.Wherein, electrostatic puts protective device 100 for a kind of grid coupling electrostatic discharge protective equipment, and therefore in electric connection, the first end of electric capacity C1 is electrically connected weld pad 101.In addition, the first end of resistance R11 is electrically connected second end of electric capacity C1, and second end of resistance R11 is electrically connected to earth terminal.In other words, resistance R11 is connected in series mutually with electric capacity C1, and forms a connected node N1.Moreover nmos pass transistor M1 and voltage drop element 110 are serially connected between weld pad 101 and earth terminal.In addition, the grid of nmos pass transistor M1 is electrically connected second end of electric capacity C1, that is the grid of nmos pass transistor M1 is electrically connected to connected node N1, and the source electrode of nmos pass transistor M1 is electrically connected to earth terminal.
Further, in the present embodiment, voltage drop element 110 is the belows being arranged on nmos pass transistor M1.Therefore, the drain electrode of nmos pass transistor M1 is electrically connected weld pad 101, and the source electrode of nmos pass transistor M1 is electrically connected to earth terminal by voltage drop element 110.In addition, in the present embodiment, voltage drop element 110 comprises diode D1, and the anode of diode D1 is electrically connected the source electrode of nmos pass transistor M1, and the negative electrode of diode D1 is electrically connected to earth terminal.
Operationally, electric capacity C1 and resistance R11 can form a time of delay, and wherein the rise time of input signal is greater than time of delay, and is greater than the rise time of the electrostatic signal from weld pad time of delay.By this, electric capacity C1 and resistance R11 will be equivalent to a circuit for detecting, in order to detect electrostatic signal, and when electrostatic signal produces trigger NMOS transistor M1.For example, when electrostatic event occurs, electric capacity C1 is equivalent to short circuit.By this, electrostatic signal by trigger NMOS transistor M1, and then causes nmos pass transistor M1 conducting.Now, nmos pass transistor M1 will provide a discharge path, and then by electrostatic signal conducting to earth terminal.By this, the electrostatic signal from weld pad 101 can be avoided to cause damage to internal circuit 102.
On the other hand, when internal circuit 102 normal running, electric capacity C1 is equivalent to open circuit, and then causes nmos pass transistor M1 cannot conducting.In addition, by the series connection structure of nmos pass transistor M1 and voltage drop element 110, the turn-on condition of nmos pass transistor M1 will become more harsh, and then impel the closedown of nmos pass transistor M1 (turnoff) state can be more complete.
For example, because voltage drop element 110 connects the source electrode of nmos pass transistor M1, the cross-pressure that therefore voltage drop element 110 is formed rises causing the source voltage of nmos pass transistor M1.Thus, to turn on NMOS transistor M1, then relatively must improve the grid voltage of nmos pass transistor M1.Moreover the drain-source voltage (Vds) of nmos pass transistor M1 also can decline along with the rising of source voltage, and then contribute to the generation reducing leakage current.On the other hand, the cross-pressure that voltage drop element 110 is formed also can cause the base-source voltage (Vbs) of nmos pass transistor M1 to be less than 0, and then improves the critical voltage (thresholdvoltage) of nmos pass transistor M1.Thus, to turn on NMOS transistor M1, then relatively must improve the grid-source voltage (Vgs) of nmos pass transistor M1.
In other words, when internal circuit 102 normal running, the series connection structure of nmos pass transistor M1 and voltage drop element 110 will cause nmos pass transistor M1 to be not easily triggered.Thus, although the rise time of input signal diminishes, the input signal being coupled to the grid of nmos pass transistor M1 also incites somebody to action not easily trigger NMOS transistor M1.By this, electrostatic discharge protective equipment 100 can be applied in the integrated circuit of high speed operation, and the leakage current in electrostatic discharge protective equipment 100 also can be lowered.
It is worth mentioning that, although Figure 1A embodiment lists the enforcement kenel of voltage drop element 110, it is also not used to limit the present invention.For example; Figure 1B and Fig. 1 C is the circuit diagram of the electrostatic discharge protective equipment according to another embodiment of the present invention respectively; wherein the maximum difference of Figure 1B and Figure 1A is; voltage drop element 110 ' in Figure 1B is made up of multiple diode D21 ~ D2n, and between diode D21 ~ D2n source electrode of being serially connected in nmos pass transistor M1 and earth terminal.In addition, Fig. 1 C and Figure 1A maximum different are in, the voltage drop element 110 in Fig. 1 C " be made up of a resistance R13, and the first end of resistance R13 is electrically connected the source electrode of nmos pass transistor, second end of resistance R13 is electrically connected to earth terminal.In addition, large more than 100 times of the resistance value of the resistance value ratio resistance R13 of resistance R11.All be included in Figure 1A embodiment as the relation that couples of each component in Figure 1B and Fig. 1 C embodiment and operation principles, therefore do not repeat them here.
Fig. 2 A is the circuit diagram of the electrostatic discharge protective equipment according to another embodiment of the present invention.Refer to shown in Fig. 2 A, electrostatic discharge protective equipment 200 is electrically connected weld pad 201, and is electrically connected to internal circuit 202 by resistance R22.Electrostatic discharge protective equipment 200 causes damage to internal circuit 202 in order to avoid the electrostatic signal from weld pad 201.Wherein, when internal circuit 202 normal running, under internal circuit 202 operates in supply voltage VD2, and input signal is received by weld pad 201.
Electrostatic discharge protective equipment 200 comprises electric capacity C2, resistance R21, nmos pass transistor M2 and voltage drop element 210.Wherein, the connection framework of electric capacity C2, resistance R21 and resistance R22, identical with the connection framework of the electric capacity C1 in Figure 1A embodiment, resistance R11 and resistance R12, therefore do not repeat them here.In addition, with Figure 1A embodiment similarly, nmos pass transistor M2 and voltage drop element 210 are serially connected between weld pad 201 and earth terminal.In addition, the grid of nmos pass transistor M2 is electrically connected second end of electric capacity C2, that is the grid of nmos pass transistor M2 is electrically connected to the connected node N2 between electric capacity C2 and resistance R21, and the source electrode of nmos pass transistor M2 is electrically connected to earth terminal.
Further, the maximum difference of Fig. 2 A and Figure 1A is, the voltage drop element 210 in Fig. 2 A is the tops being arranged on nmos pass transistor M2.Therefore, the first end of voltage drop element 210 is electrically connected weld pad 201, and the second end of voltage drop element 210 is electrically connected the drain electrode of nmos pass transistor M2, and the source electrode of nmos pass transistor M2 is electrically connected to earth terminal.In addition, in Fig. 2 A embodiment, voltage drop element 210 comprises diode D3.Wherein, the anode of diode D3 is electrically connected weld pad 201, and the negative electrode of diode D3 is electrically connected the drain electrode of nmos pass transistor M2.
Operationally, electric capacity C2 and resistance R21 can form a time of delay, and wherein the rise time of input signal is greater than time of delay, and is greater than the rise time of the electrostatic signal from weld pad time of delay.By this, when electrostatic event occurs, electric capacity C2 is equivalent to short circuit, and then causes electrostatic signal trigger NMOS transistor M2 conducting.Now, nmos pass transistor M2 will provide a discharge path, and then by electrostatic signal conducting to earth terminal.
On the other hand, when internal circuit 202 normal running, electric capacity C2 is equivalent to open circuit, and then causes nmos pass transistor M2 cannot conducting.In addition, by the series connection structure of nmos pass transistor M2 and voltage drop element 210, the turn-on condition of nmos pass transistor M2 will become more harsh, and then impel the closed condition of nmos pass transistor M2 can be more complete.
For example, because voltage drop element 210 connects the drain electrode of nmos pass transistor M2, the cross-pressure that therefore voltage drop element 210 is formed declines causing the drain voltage of nmos pass transistor M2.Thus, the drain-source voltage (Vds) of nmos pass transistor M2 also can decline along with the decline of drain voltage, and then contributes to the generation reducing leakage current.In other words, when internal circuit 202 normal running, the series connection structure of nmos pass transistor M2 and voltage drop element 210 will cause nmos pass transistor M2 to be not easily triggered.
In addition, the voltage drop element 210 in Fig. 2 A also can utilize other framework to realize.For example; Fig. 2 B and Fig. 2 C is the circuit diagram of the electrostatic discharge protective equipment according to another embodiment of the present invention respectively; wherein the maximum difference of Fig. 2 B and Fig. 2 A is; voltage drop element 210 ' in Fig. 2 B is made up of multiple diode D41 ~ D4n, and diode D41 ~ D4n is serially connected between the drain electrode of weld pad 201 and nmos pass transistor M2.
In addition, Fig. 2 C and Fig. 2 A maximum different are in, the voltage drop element 210 in Fig. 2 C " be made up of a resistance R23, and the first end of resistance R23 is electrically connected weld pad 201, and second end of resistance R23 is electrically connected the drain electrode of nmos pass transistor M2.In addition, large more than 100 times of the resistance value of the resistance value ratio resistance R23 of resistance R21.All be included in Fig. 2 A embodiment as the relation that couples of each component in Fig. 2 B and Fig. 2 C embodiment and operation principles, therefore do not repeat them here.
In sum, the present invention utilizes the series connection structure of nmos pass transistor and voltage drop element to be not easily triggered to cause nmos pass transistor.Thus, although the rise time of input signal diminishes, the input signal being coupled to the grid of nmos pass transistor also incites somebody to action not easily trigger NMOS transistor.By this, electrostatic discharge protective equipment can be applied in the integrated circuit of high speed operation, and the leakage current in electrostatic discharge protective equipment also can be lowered.
The above, it is only preferred embodiment of the present invention, not any pro forma restriction is done to the present invention, although the present invention discloses as above with preferred embodiment, but and be not used to limit the present invention, any those skilled in the art, do not departing within the scope of technical solution of the present invention, make a little change when the technology contents of above-mentioned announcement can be utilized or be modified to the Equivalent embodiments of equivalent variations, in every case be do not depart from technical solution of the present invention content, according to any simple modification that technical spirit of the present invention is done above embodiment, equivalent variations and modification, all still belong in the scope of technical solution of the present invention.
Claims (3)
1. an electrostatic discharge protective equipment, be electrically connected between a weld pad and an internal circuit, wherein this internal circuit receives an input signal by this weld pad, it is characterized in that this electrostatic discharge protective equipment comprises:
One electric capacity, its first end is electrically connected this weld pad;
One first resistance, its first end is electrically connected the second end of this electric capacity, and the second end of this first resistance is electrically connected to an earth terminal;
One the 3rd diode; And
One nmos pass transistor, wherein this nmos pass transistor and the 3rd diode are serially connected between this weld pad and this earth terminal, the anode of the 3rd diode is electrically connected this weld pad, the negative electrode of the 3rd diode is electrically connected the drain electrode of this nmos pass transistor, the grid of this nmos pass transistor is electrically connected the second end of this electric capacity, and the source electrode of this nmos pass transistor is electrically connected this earth terminal.
2. an electrostatic discharge protective equipment, be electrically connected between a weld pad and an internal circuit, wherein this internal circuit receives an input signal by this weld pad, it is characterized in that this electrostatic discharge protective equipment comprises:
One electric capacity, its first end is electrically connected this weld pad;
One first resistance, its first end is electrically connected the second end of this electric capacity, and the second end of this first resistance is electrically connected to an earth terminal;
Multiple 4th diode; And
One nmos pass transistor, wherein this nmos pass transistor and the plurality of 4th diode are serially connected between this weld pad and this earth terminal, the grid of this nmos pass transistor is electrically connected the second end of this electric capacity, the source electrode of this nmos pass transistor is electrically connected this earth terminal, and the plurality of 4th diode is forward serially connected between this weld pad and drain electrode of this nmos pass transistor.
3. electrostatic discharge protective equipment according to claim 1 and 2; it is characterized in that wherein said electric capacity and this first resistance form a time of delay; and the rise time of this input signal is greater than this time of delay, be greater than the rise time of the electrostatic signal from this weld pad this time of delay.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110289658.5A CN103022997B (en) | 2011-09-21 | 2011-09-21 | Electrostatic discharge protective equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110289658.5A CN103022997B (en) | 2011-09-21 | 2011-09-21 | Electrostatic discharge protective equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103022997A CN103022997A (en) | 2013-04-03 |
| CN103022997B true CN103022997B (en) | 2016-02-03 |
Family
ID=47971265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110289658.5A Expired - Fee Related CN103022997B (en) | 2011-09-21 | 2011-09-21 | Electrostatic discharge protective equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103022997B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6858901B2 (en) * | 2002-09-16 | 2005-02-22 | Taiwan Semiconductor Manufacturing Company | ESD protection circuit with high substrate-triggering efficiency |
| US7256460B2 (en) * | 2004-11-30 | 2007-08-14 | Texas Instruments Incorporated | Body-biased pMOS protection against electrostatic discharge |
| CN101488665A (en) * | 2008-01-18 | 2009-07-22 | 瑞鼎科技股份有限公司 | Electrostatic discharging protection circuit |
| US7719813B2 (en) * | 2005-10-20 | 2010-05-18 | United Microelectronics Corp. | Gate-coupled substrate-triggered ESD protection circuit and integrated circuit therewith |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW511268B (en) * | 2000-04-21 | 2002-11-21 | Winbond Electronics Corp | Output buffer with excellent electrostatic discharge protection effect |
| TW511269B (en) * | 2001-03-05 | 2002-11-21 | Taiwan Semiconductor Mfg | Silicon-controlled rectifier device having deep well region structure and its application on electrostatic discharge protection circuit |
| JP3920276B2 (en) * | 2004-04-20 | 2007-05-30 | Ｎｅｃエレクトロニクス株式会社 | ESD protection circuit |
| US7570468B2 (en) * | 2006-07-05 | 2009-08-04 | Atmel Corporation | Noise immune RC trigger for ESD protection |
-
2011
- 2011-09-21 CN CN201110289658.5A patent/CN103022997B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6858901B2 (en) * | 2002-09-16 | 2005-02-22 | Taiwan Semiconductor Manufacturing Company | ESD protection circuit with high substrate-triggering efficiency |
| US7256460B2 (en) * | 2004-11-30 | 2007-08-14 | Texas Instruments Incorporated | Body-biased pMOS protection against electrostatic discharge |
| US7719813B2 (en) * | 2005-10-20 | 2010-05-18 | United Microelectronics Corp. | Gate-coupled substrate-triggered ESD protection circuit and integrated circuit therewith |
| CN101488665A (en) * | 2008-01-18 | 2009-07-22 | 瑞鼎科技股份有限公司 | Electrostatic discharging protection circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103022997A (en) | 2013-04-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9246329B2 (en) | Electrostatic discharge protection circuit and display device including the same | |
| CN101626154A (en) | ESD full-chip protection circuit of integrated circuit | |
| CN101707196B (en) | Improved electrostatic discharge protective device, corresponding method and integrated circuit | |
| CN104348148A (en) | Electrostatic discharge clamping circuit | |
| CN106229962B (en) | A kind of power source reverse connection protection circuit | |
| CN101383507A (en) | Electro-static discharging protection circuit | |
| CN104269440A (en) | Stack N-type transistor and electrostatic protection circuit | |
| US8526149B2 (en) | Limiting current circuit that has output short circuit protection | |
| CN104716135A (en) | Electrostatic protection circuit | |
| US9991253B2 (en) | Protection element, protection circuit, and semiconductor integrated circuit | |
| CN103390618B (en) | The controllable silicon Transient Voltage Suppressor that embedded gate grounding NMOS triggers | |
| CN202917970U (en) | Power supply clamping ESD protection circuit | |
| CN103022997B (en) | Electrostatic discharge protective equipment | |
| CN107579064A (en) | A kind of stacked ESD protection circuit | |
| CN102270658B (en) | Low-trigger-voltage and low-parasitic-capacitance silicon controlled structure | |
| CN105428353A (en) | High-voltage ESD protective device provided with fin type LDMOS structure | |
| CN103325784B (en) | Based on the chip electrostatic protection circuit of memristor | |
| CN205248270U (en) | High pressure ESD protective device with class fin formula LDMOS structure | |
| CN104638622A (en) | Electrostatic discharge protection circuit | |
| CN103545306B (en) | ESD protection circuit | |
| CN1979842A (en) | Electrostatic discharging protection circuit triggered by lining-bottom | |
| CN105448908A (en) | Silicon control rectifier | |
| CN203205856U (en) | Electrostatic protection circuit and battery protection circuit thereof | |
| US10148182B2 (en) | Voltage conversion circuit with bleed module | |
| CN102034809B (en) | ESD (Electrostatic Discharge) protective circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160203 Termination date: 20190921 |