CN103017948A - Piezoresistive type pressure sensor - Google Patents
Piezoresistive type pressure sensor Download PDFInfo
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- CN103017948A CN103017948A CN2012104951543A CN201210495154A CN103017948A CN 103017948 A CN103017948 A CN 103017948A CN 2012104951543 A CN2012104951543 A CN 2012104951543A CN 201210495154 A CN201210495154 A CN 201210495154A CN 103017948 A CN103017948 A CN 103017948A
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- foil gauge
- pressure sensor
- semiconductor resistor
- resistor foil
- resistance strain
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- Measuring Fluid Pressure (AREA)
Abstract
The invention discloses a piezoresistive type pressure sensor comprising a first semiconductor resistance strain gage set and a second semiconductor resistance strain gage set, wherein the first semiconductor resistance strain gage set comprises semiconductor resistance strain gages R1, R2, R3 and R4, and a first Wheatstone bridge is formed by the R1, the R2, the R3 and the R4; the second first semiconductor resistance strain gage set comprises semiconductor resistance strain gages R5, R6, R7 and R8 and a second Wheatstone bridge is formed by the R5, the R6, the R7 and the R8; the first Wheatstone bridge and the second Wheatstone bridge are distributed on two semi-spheres of a spherical detection shell of the pressure sensor; and input and output ends of the first Wheatstone bridge and the second Wheatstone bridge are connected in parallel to detection circuits. According to the piezoresistive type pressure sensor disclosed by the invention, two groups of the detection circuits are used; each group of the detection circuit comprises four semiconductor resistance strain gages; the two groups of the detection circuits are respectively located on the opposite semi-spheres; and pressure in different directions can be detected simultaneously and the measurement precision is improved.
Description
Technical field
The present invention relates to a kind of piezoresistive pressure sensor.
Background technology
Traditional mechanical quantity pressure transducer is based on metal elastic gonosome stress deformation, exported to the electric weight conversion by the mechanical quantity elastic deformation, but the large cost of volume is high.With respect to traditional mechanical quantity sensor, the size of MEMS pressure transducer is less, and maximum is no more than one centimetre, and with respect to tradition " machinery " manufacturing technology, its cost performance increases substantially.Present MEMS pressure transducer has silicon piezoresistance type pressure sensor and Silicon Pressure Sensor of Capacitance, the micromechanics electronic sensor that both generates at silicon chip.Silicon piezoresistance type pressure sensor is to adopt high-accuracy semiconductor resistor foil gauge to form resistance bridge as power electricity conversion metering circuit, has higher measuring accuracy, lower power consumption and extremely low cost.The piezoresistive transducer of resistance bridge, as changing without pressure, it is output as zero, hardly power consumption.In the prior art, four semiconductor resistor foil gauges are plane distribution in sensor body, accept pressure in same direction, and in the actual working environment, and all directions pressure may be different, cause measuring inaccurate, demand urgently improving.
Summary of the invention
Problem for prior art exists the object of the invention is to propose a kind of piezoresistive pressure sensor, by enforcement of the present invention, improves pressure measurement accuracy.
For reaching this purpose, the present invention by the following technical solutions:
A kind of piezoresistive pressure sensor, comprise: the first semiconductor resistor foil gauge group and the second semiconductor resistor foil gauge group, the first semiconductor resistor foil gauge group comprises semiconductor resistor foil gauge R1, R2, R3 and R4, R1, R2, R3 and R4 form the first resistance bridge, the second semiconductor resistor foil gauge group comprises semiconductor resistor foil gauge R5, R6, R7 and R8, and R5, R6, R7 and R8 form the second resistance bridge; The first resistance bridge and the second resistance bridge are distributed in the ball-type of described pressure transducer and survey on two hemisphere of shell, and input and output side is parallel to testing circuit.
Preferably, the semiconductor resistor foil gauge is cambered surface, surveys the shell coupling with described ball-type.
Preferably, the semiconductor resistor foil gauge is the plane, and is tangent with described ball-type detection case surface.
Compared with prior art, the present invention has following beneficial effect:
Among the present invention, use two groups of testing circuits, every group of testing circuit comprises four semiconductor resistor foil gauges, and these two groups of testing circuits lay respectively on the relative hemisphere; Can detect simultaneously the pressure of different directions, improve measuring accuracy.
The invention accompanying drawing
Fig. 1 is the schematic diagram of a kind of piezoresistive pressure sensor of providing of the embodiment of the invention 1.
Embodiment
The embodiment of the invention 1 provides a kind of piezoresistive pressure sensor, as shown in Figure 1, comprise: the first semiconductor resistor foil gauge group and the second semiconductor resistor foil gauge group, the first semiconductor resistor foil gauge group comprises semiconductor resistor foil gauge R1, R2, R3 and R4, R1, R2, R3 and R4 form the first resistance bridge, the second semiconductor resistor foil gauge group comprises semiconductor resistor foil gauge R5, R6, R7 and R8, and R5, R6, R7 and R8 form the second resistance bridge; The first resistance bridge and the second resistance bridge are distributed in the ball-type of described pressure transducer and survey on two hemisphere of shell 1, and input and output side is parallel to testing circuit.Wherein the semiconductor resistor foil gauge is cambered surface, surveys the shell coupling with described ball-type; Or the semiconductor resistor foil gauge is the plane, and to survey case surface tangent with described ball-type.
The above; only be the better embodiment of the present invention; but protection scope of the present invention is not limited to this; anyly be familiar with those skilled in the art in the technical scope that the present invention discloses; be equal to replacement or change according to technical scheme of the present invention and inventive concept thereof, all should be encompassed within protection scope of the present invention.
Claims (3)
1. piezoresistive pressure sensor, it is characterized in that, comprise: the first semiconductor resistor foil gauge group and the second semiconductor resistor foil gauge group, the first semiconductor resistor foil gauge group comprises semiconductor resistor foil gauge R1, R2, R3 and R4, R1, R2, R3 and R4 form the first resistance bridge, the second semiconductor resistor foil gauge group comprises semiconductor resistor foil gauge R5, R6, R7 and R8, and R5, R6, R7 and R8 form the second resistance bridge; The first resistance bridge and the second resistance bridge are distributed in the ball-type of described pressure transducer and survey on two hemisphere of shell, and input and output side is parallel to testing circuit.
2. piezoresistive pressure sensor according to claim 1 is characterized in that, the semiconductor resistor foil gauge is cambered surface, surveys the shell coupling with described ball-type.
3. piezoresistive pressure sensor according to claim 1 is characterized in that, the semiconductor resistor foil gauge is the plane, and is tangent with described ball-type detection case surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104951543A CN103017948A (en) | 2012-11-28 | 2012-11-28 | Piezoresistive type pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012104951543A CN103017948A (en) | 2012-11-28 | 2012-11-28 | Piezoresistive type pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103017948A true CN103017948A (en) | 2013-04-03 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012104951543A Pending CN103017948A (en) | 2012-11-28 | 2012-11-28 | Piezoresistive type pressure sensor |
Country Status (1)
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| CN (1) | CN103017948A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106644201A (en) * | 2017-02-24 | 2017-05-10 | 福建省莆田市衡力传感器有限公司 | Hemispherical head friction sensor |
| RU2724321C1 (en) * | 2019-12-11 | 2020-06-22 | Федеральное государственное унитарное предприятие "Центральный аэрогидродинамический институт имени профессора Н.Е. Жуковского" (ФГУП "ЦАГИ") | Method of forming steps of resistance increment in a four-wire simulator of signals of strain gauges and a simulator of signals of strain gauges |
| CN113790974A (en) * | 2021-10-12 | 2021-12-14 | 中国科学院武汉岩土力学研究所 | Soil body horizontal stress testing method and system based on flexible consolidation pressure chamber |
| CN114001794A (en) * | 2020-12-29 | 2022-02-01 | 广州机觉云物联科技有限公司 | Storage container stock measuring device, control and measuring method, device and medium |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS628029A (en) * | 1985-07-03 | 1987-01-16 | Tlv Co Ltd | Diaphragm of pressure gauge |
| CN2262238Y (en) * | 1996-07-11 | 1997-09-10 | 鞍山钢铁集团公司 | Variable measuring range force measuring sensor |
| CN1825076A (en) * | 2006-03-31 | 2006-08-30 | 山东建筑大学 | Die stamping force and stamping force centre measurer |
| JP2008281407A (en) * | 2007-05-09 | 2008-11-20 | National Institute Of Advanced Industrial & Technology | Tactile sensor element |
-
2012
- 2012-11-28 CN CN2012104951543A patent/CN103017948A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS628029A (en) * | 1985-07-03 | 1987-01-16 | Tlv Co Ltd | Diaphragm of pressure gauge |
| CN2262238Y (en) * | 1996-07-11 | 1997-09-10 | 鞍山钢铁集团公司 | Variable measuring range force measuring sensor |
| CN1825076A (en) * | 2006-03-31 | 2006-08-30 | 山东建筑大学 | Die stamping force and stamping force centre measurer |
| JP2008281407A (en) * | 2007-05-09 | 2008-11-20 | National Institute Of Advanced Industrial & Technology | Tactile sensor element |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106644201A (en) * | 2017-02-24 | 2017-05-10 | 福建省莆田市衡力传感器有限公司 | Hemispherical head friction sensor |
| RU2724321C1 (en) * | 2019-12-11 | 2020-06-22 | Федеральное государственное унитарное предприятие "Центральный аэрогидродинамический институт имени профессора Н.Е. Жуковского" (ФГУП "ЦАГИ") | Method of forming steps of resistance increment in a four-wire simulator of signals of strain gauges and a simulator of signals of strain gauges |
| CN114001794A (en) * | 2020-12-29 | 2022-02-01 | 广州机觉云物联科技有限公司 | Storage container stock measuring device, control and measuring method, device and medium |
| CN113790974A (en) * | 2021-10-12 | 2021-12-14 | 中国科学院武汉岩土力学研究所 | Soil body horizontal stress testing method and system based on flexible consolidation pressure chamber |
| CN113790974B (en) * | 2021-10-12 | 2022-11-29 | 中国科学院武汉岩土力学研究所 | Soil body horizontal stress testing method and system based on flexible consolidation pressure chamber |
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Application publication date: 20130403 |