CN102990503B - For the finishing method of CdS wafer - Google Patents
For the finishing method of CdS wafer Download PDFInfo
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- CN102990503B CN102990503B CN201210445526.1A CN201210445526A CN102990503B CN 102990503 B CN102990503 B CN 102990503B CN 201210445526 A CN201210445526 A CN 201210445526A CN 102990503 B CN102990503 B CN 102990503B
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Abstract
The invention discloses a kind of finishing method for CdS wafer, comprise: CdS wafer is roughly ground on polyurethane polishing pad, and then refine, wherein, abrasive material 5 ~ 30wt% that corase grind and fine grinding adopt, grinding fluid 0.1 ~ 0.50wt%, grinding aid liquid 0.1 ~ 0.50wt%, lapping liquid flow is 1 ~ 50ml/min, grinding pressure 50 ~ 150g/cm
2, rotating speed 40 ~ 80r/min, the granularity of the lapping liquid that corase grind adopts is W7, and the granularity of the lapping liquid that fine grinding adopts is W1.5; Finally described CdS wafer is carried out chemically mechanical polishing on synthetic leather polishing pad, the size of the granularity of polishing fluid is 10 ~ 100nm, and pH value is 9.5, and polish pressure is 60 ~ 120g/cm
2, rotating speed 60 ~ 100r/min, described polishing fluid comprises: nanometer abrasive 5 ~ 15wt%, and oxidant is 1.5 ~ 3wt%, and surfactant 0.01wt%, PH conditioning agent effectively reduces the damage of plane of crystal by the CdS wafer after this method process.
Description
Technical field
The present invention relates to crystalline material processing technique field, particularly relate to a kind of finishing method for CdS wafer.
Background technology
II-VI race's monocrystal material is excellent material for detector and laser material, CdS is II-VI compound semiconductor of directly leaping, it is a kind of window material and buffer layer material preferably, is commonly used to make photochemical catalysis, semiconductor devices, luminescent device, laser and light sensor.CdS can make ultraviolet detector, is again good material of infrared window, be therefore used to guided missile infrared/ultraviolet two-color guidance.Therefore, very high application prospect and military significance is had to the research of CdS monocrystal material.
The surface quality of CdS monocrystalline and the performance of its device closely related, but the CdS single-crystal surface roughness after the process of existing CdS monocrystalline glossing is large, polishing effect is bad.
Summary of the invention
In view of above-mentioned analysis, the present invention aims to provide a kind of finishing method for CdS wafer, large in order to the CdS single-crystal surface roughness solved in prior art after the process of CdS monocrystalline glossing, the problem that polishing effect is bad.
Object of the present invention is mainly achieved through the following technical solutions:
For a finishing method for CdS wafer, comprising:
CdS wafer is roughly ground on polyurethane polishing pad, and then refine, wherein, the proportioning of the lapping liquid that corase grind and fine grinding adopt is: abrasive material 5 ~ 30wt%, grinding fluid 0.1 ~ 0.50wt%, grinding aid liquid 0.1 ~ 0.50wt%, surplus is deionized water, lapping liquid flow is 1 ~ 50ml/min, grinding pressure 50 ~ 150g/cm
2, rotating speed 40 ~ 80r/min, the granularity of the lapping liquid that corase grind adopts is W7, and the granularity of the lapping liquid that fine grinding adopts is W1.5;
Described CdS wafer after fine grinding is carried out chemically mechanical polishing on synthetic leather polishing pad, and the size of the granularity of polishing fluid is 20 ~ 60nm, and pH value is 9.5, and polish pressure is 60 ~ 120g/cm
2, rotating speed 60 ~ 100r/min, described polishing fluid comprises: nanometer abrasive 1 ~ 15wt%, and oxidant is 1 ~ 3wt%, surfactant 0.01wt%, PH conditioning agent, and surplus is deionized water.
Preferably, described polyurethane polishing pad is LP-66 type.
Preferably, described abrasive material comprises aluminium oxide, or the mixture of aluminium oxide and boron carbide, or the mixture of aluminium oxide and carborundum, or the mixture of aluminium oxide, boron carbide and carborundum, when described abrasive material is mixture, the weight fraction that described aluminium oxide accounts for described mixture is greater than 80%.
Preferably, described synthetic leather polishing pad is FIWEL N0054 type polishing pad.
Preferably, the composition of polishing fluid comprises: nanometer abrasive 3 ~ 10wt%, and oxidant is 1 ~ 2.5wt%, surfactant 0.01wt%, PH conditioning agent, and surplus is deionized water.
Preferably, described nanometer abrasive comprises silica, or the mixture of silica and cerium oxide, when described nanometer abrasive be silica and cerium oxide time, the part by weight of silica and cerium oxide is greater than 4:1.
Preferably, the flow 10 ~ 80ml/min of described polishing fluid.
Preferably, described oxidant is the mixture of clorox or clorox and hydrogen peroxide, and when described oxidant is the mixture of clorox and hydrogen peroxide, the volume ratio of clorox and hydrogen peroxide is greater than 5:1.
Preferably, described surfactant is nonionic surfactant, comprises one or more mixtures in AEO, polyoxyethylate amide and polyalcohol.
Preferably, described pH value conditioning agent is inorganic solution and organic solution, and described inorganic solution is one or more in potassium hydroxide and NaOH, and described organic solution is triisopropanolamine, one or both in triethanolamine, the ratio of described inorganic solution and organic solution is 1:1 ~ 5.
Beneficial effect of the present invention is as follows:
A kind of finishing method for CdS wafer that the embodiment of the present invention provides, by adopting method of the present invention, CdS wafer being roughly ground, refining and chemical mechanical polish process, the surfacing of the CdS wafer obtained, roughness reaches below 1nm, effectively reduce the damage of plane of crystal, improve the quality of plane of crystal.
Other features and advantages of the present invention will be set forth in the following description, and, becoming apparent from description of part, or understand by implementing the present invention.Object of the present invention and other advantages realize by structure specifically noted in write description, claims and accompanying drawing and obtain.
Accompanying drawing explanation
Fig. 1 is the flow chart of the finishing method of the CdS wafer of the embodiment of the present invention 1;
Fig. 2 is the flow chart of the finishing method of the CdS wafer of the embodiment of the present invention 3.
Detailed description of the invention
Specifically describe the preferred embodiments of the present invention below in conjunction with accompanying drawing, wherein, accompanying drawing forms the application's part, and together with embodiments of the present invention for explaining principle of the present invention.
Embodiment 1
A kind of finishing method for CdS wafer that the embodiment of the present invention provides, see Fig. 1, the method comprises:
S101, CdS wafer to be roughly ground on polyurethane polishing pad, and then refine, wherein, the proportioning of the lapping liquid that corase grind and fine grinding adopt is: abrasive material 5 ~ 30wt%, grinding fluid 0.1 ~ 0.50wt%, grinding aid liquid 0.1 ~ 0.50wt%, surplus is deionized water, lapping liquid flow is 1 ~ 50ml/min, grinding pressure 50 ~ 150g/cm
2, rotating speed 40 ~ 80r/min, the granularity of the lapping liquid that corase grind adopts is W7, and the granularity of the lapping liquid that fine grinding adopts is W1.5;
S102, by fine grinding after described CdS wafer on synthetic leather polishing pad, carry out chemically mechanical polishing, the size of the granularity of polishing fluid is 20 ~ 60nm, and pH value is 9.5, and polish pressure is 60 ~ 120g/cm
2, rotating speed 60 ~ 100r/min, described polishing fluid comprises: nanometer abrasive 1 ~ 15wt%, and oxidant is 1 ~ 3wt%, surfactant 0.01wt%, PH conditioning agent, and surplus is deionized water;
S103, obtain CdS wafer.
A kind of finishing method for CdS wafer that the embodiment of the present invention provides, by roughly grinding CdS wafer, refining and chemical mechanical polish process, the surfacing of the CdS wafer obtained, roughness reaches below 1nm, effectively reduce the damage of plane of crystal, improve the damage of plane of crystal.
Embodiment 2
Embodiments provide the another kind of finishing method for CdS wafer, comprising:
CdS wafer is roughly ground on polyurethane polishing pad, and then refine, wherein, the proportioning of the lapping liquid that corase grind and fine grinding adopt is: abrasive material 5 ~ 30wt%, grinding fluid 0.1 ~ 0.50wt%, grinding aid liquid 0.1 ~ 0.50wt%, surplus is deionized water, lapping liquid flow is 1 ~ 50ml/min, grinding pressure 50 ~ 150g/cm
2, rotating speed 40 ~ 80r/min, the granularity of the lapping liquid that corase grind adopts is W7, and the granularity of the lapping liquid that fine grinding adopts is W1.5;
Wherein, the described polyurethane polishing pad in the embodiment of the present invention is LP-66 type.
Described abrasive material in the embodiment of the present invention comprises aluminium oxide, or the mixture of aluminium oxide and boron carbide, or the mixture of aluminium oxide and carborundum, or the mixture of aluminium oxide, boron carbide and carborundum, when described abrasive material is mixture, the weight fraction that described aluminium oxide accounts for described mixture is greater than 80%.
Described CdS wafer after fine grinding is carried out chemically mechanical polishing on synthetic leather polishing pad, and the size of the granularity of polishing fluid is 20 ~ 60nm, and pH value is 9.5, and polish pressure is 60 ~ 120g/cm
2, rotating speed 60 ~ 100r/min, described polishing fluid comprises: nanometer abrasive 1 ~ 15wt%, and oxidant is 1 ~ 3wt%, surfactant 0.01wt%, PH conditioning agent, and surplus is deionized water.
Wherein, the described synthetic leather polishing pad in the embodiment of the present invention is FIWEL N0054 type polishing pad.
The composition of the polishing fluid in the embodiment of the present invention comprises: nanometer abrasive 3 ~ 10wt%, and oxidant is 1 ~ 2.5wt%, surfactant 0.01wt%, PH conditioning agent, and surplus is deionized water.Described nanometer abrasive comprises silica, or the mixture of silica and cerium oxide, when described nanometer abrasive be silica and cerium oxide time, the part by weight of silica and cerium oxide is greater than 4:1.
Flow 10 ~ the 80ml/min of the described polishing fluid in the embodiment of the present invention.
Described oxidant in the embodiment of the present invention is the mixture of clorox or clorox and hydrogen peroxide, and when described oxidant is the mixture of clorox and hydrogen peroxide, the volume ratio of clorox and hydrogen peroxide is greater than 5:1.
Described surfactant in the embodiment of the present invention is nonionic surfactant, comprises one or more mixtures in AEO, polyoxyethylate amide and polyalcohol.
Described pH value conditioning agent in the embodiment of the present invention is inorganic solution and organic solution, described inorganic solution is one or more in potassium hydroxide and NaOH, described organic solution is triisopropanolamine, one or both in triethanolamine, the volume ratio of described inorganic solution and organic solution is 1:1 ~ 5.
Chemically mechanical polishing in the embodiment of the present invention first adopts the nanometer abrasive of large discharge and Large stone to carry out polishing, and then adopts the nanometer abrasive of low discharge and small particle diameter to carry out polishing, to reach better polishing effect.
Embodiment 3
A kind of finishing method for CdS wafer that the embodiment of the present invention provides, see Fig. 2, the method comprises:
S201, ceramic wafer is heated to 80 degree, then by liquid wax uniform application on ceramic wafer, then CdS wafer is fixed on ceramic wafer;
S202, the ceramic wafer being fixed with CdS wafer is placed on grinder polyurethane polishing pad on roughly grind, the composition of the lapping liquid adopted is: aluminium oxide and carborundum account for 20wt% altogether, and the part by weight of aluminium oxide and carborundum is greater than 4:1, grinding fluid 0.2wt%, grinding aid liquid 0.3wt%, surplus is deionized water, and lapping liquid flow is 40ml/min, grinding pressure 100g/cm
2, rotating speed 60r/min, the granularity of the lapping liquid that corase grind adopts is W7;
Wherein, lapping liquid adopts the mode instiled to enter in the ceramic ring on polishing pad, by ceramic ring, lapping liquid is uniformly distributed at polishing pad, to reach better grinding effect;
S203, refine on polyurethane polishing pad, fine grinding and corase grind are adopted in a like fashion, and the granularity of lapping liquid that just fine grinding adopts is W1.5;
S204, finally on the FIWEL N0054 type polishing pad of polishing machine, carry out chemically mechanical polishing, pH value is 9.5, and polish pressure is 100g/cm
2, rotating speed 80r/min, described polishing fluid comprises: silica 1 0wt%, and clorox is 2wt%, and AEO 0.01wt%, PH conditioning agent is potassium hydroxide and the triisopropanolamine of volume ratio 1:1, and surplus is deionized water.
First adopt granularity to be the polishing fluid of 60nm, large discharge 80ml/min carries out polishing, then transfers the polishing fluid of granularity 30nm to, and flow is that 50ml/min carries out polishing.
S205, obtain CdS wafer.
Embodiment 4
A kind of finishing method for CdS wafer that the embodiment of the present invention provides, the method comprises:
Ceramic wafer is heated to 80 degree, then by liquid wax uniform application on ceramic wafer, then CdS wafer is fixed on ceramic wafer;
The polyurethane polishing pad ceramic wafer being fixed with CdS wafer being placed on grinder is roughly ground, the composition of the lapping liquid adopted is: the mixture 5wt% altogether of aluminium oxide and carborundum, wherein the part by weight of aluminium oxide and carborundum is greater than 9:1, grinding fluid 0.3wt%, grinding aid liquid 0.2wt%, surplus is deionized water, and lapping liquid flow is 50ml/min, grinding pressure 150g/cm
2, rotating speed 80r/min, the granularity of the lapping liquid that corase grind adopts is W7;
Wherein, lapping liquid adopts the mode instiled to enter in the ceramic ring on polishing pad, by ceramic ring, lapping liquid is uniformly distributed at polishing pad, to reach better grinding effect;
Polyurethane polishing pad refines, and fine grinding and corase grind are adopted in a like fashion, and the granularity of the lapping liquid of just fine grinding employing is W1.5;
Finally on the FIWEL N0054 type polishing pad of polishing machine, carry out chemically mechanical polishing, pH value is 9.5, and polish pressure is 120g/cm
2rotating speed 100r/min, described polishing fluid comprises: silica 1 wt%, the mixture of clorox and hydrogen peroxide is 1wt%, wherein the volume ratio of clorox and hydrogen peroxide is greater than 5:1, AEO 0.01wt%, PH conditioning agent is NaOH and the triisopropanolamine of volume ratio 1:1, and surplus is deionized water.
First adopt granularity to be the polishing fluid of 50nm, large discharge 70ml/min carries out polishing, then transfers the polishing fluid of granularity 20nm to, and flow is that 50ml/min carries out polishing.
Obtain CdS wafer.
Embodiment 5
A kind of finishing method for CdS wafer that the embodiment of the present invention provides, the method comprises:
Ceramic wafer is heated to 80 degree, then by liquid wax uniform application on ceramic wafer, then CdS wafer is fixed on ceramic wafer;
The polyurethane polishing pad ceramic wafer being fixed with CdS wafer being placed on grinder is roughly ground, the composition of the lapping liquid adopted is: the mixture 30wt% of aluminium oxide and boron carbide, wherein the part by weight of aluminium oxide and boron carbide is greater than 4:1, grinding fluid 0.5wt%, grinding aid liquid 0.5wt%, surplus is deionized water, and lapping liquid flow is 1ml/min, grinding pressure 50g/cm
2, rotating speed 40r/min, the granularity of the lapping liquid that corase grind adopts is W7;
Wherein, lapping liquid adopts the mode instiled to enter in the ceramic ring on polishing pad, by ceramic ring, lapping liquid is uniformly distributed at polishing pad, to reach better grinding effect;
Polyurethane polishing pad refines, and fine grinding and corase grind are adopted in a like fashion, and the granularity of the lapping liquid of just fine grinding employing is W1.5;
Finally on the FIWEL N0054 type polishing pad of polishing machine, carry out chemically mechanical polishing, pH value is 9.5, and polish pressure is 60g/cm
2, rotating speed 60r/min, described polishing fluid comprises: silica 1 5wt%, and clorox is 3wt%, and AEO 0.01wt%, PH conditioning agent is NaOH and the triethanolamine of volume ratio 1:1, and surplus is deionized water.
First adopt granularity to be the polishing fluid of 50nm, large discharge 60ml/min carries out polishing, then transfers the polishing fluid of granularity 20nm to, and flow is that 30ml/min carries out polishing.
Obtain CdS wafer.
Embodiment 6
A kind of finishing method for CdS wafer that the embodiment of the present invention provides, the method comprises:
Ceramic wafer is heated to 80 degree, then by liquid wax uniform application on ceramic wafer, then CdS wafer is fixed on ceramic wafer;
The polyurethane polishing pad ceramic wafer being fixed with CdS wafer being placed on grinder is roughly ground, the composition of the lapping liquid adopted is: aluminium oxide and carborundum 30wt%, wherein the part by weight of aluminium oxide and carborundum is greater than 4:1, grinding fluid 0.5wt%, grinding aid liquid 0.5wt%, surplus is deionized water, and lapping liquid flow is 1ml/min, grinding pressure 100g/cm
2, rotating speed 50r/min, the granularity of the lapping liquid that corase grind adopts is W7;
Wherein, lapping liquid adopts the mode instiled to enter in the ceramic ring on polishing pad, by ceramic ring, lapping liquid is uniformly distributed at polishing pad, to reach better grinding effect;
Polyurethane polishing pad refines, and fine grinding and corase grind are adopted in a like fashion, and the granularity of the lapping liquid of just fine grinding employing is W1.5;
Finally on the FIWEL N0054 type polishing pad of polishing machine, carry out chemically mechanical polishing, pH value is 9.5, and polish pressure is 60g/cm
2rotating speed 60r/min, described polishing fluid comprises: the mixture 15wt% of silica and aluminium oxide, wherein, the part by weight of silica and aluminium oxide is greater than 4:1, and clorox is 3wt%, AEO 0.01wt%, PH conditioning agent is NaOH and the triethanolamine of volume ratio 1:2, and surplus is deionized water.
First adopt granularity to be the polishing fluid of 60nm, large discharge 50ml/min carries out polishing, then transfers the polishing fluid of granularity 20nm to, and flow is that 8ml/min carries out polishing.
Obtain CdS wafer.
Embodiment 7
A kind of finishing method for CdS wafer that the embodiment of the present invention provides, see Fig. 2, the method comprises:
Ceramic wafer is heated to 80 degree, then by liquid wax uniform application on ceramic wafer, then CdS wafer is fixed on ceramic wafer;
The polyurethane polishing pad ceramic wafer being fixed with CdS wafer being placed on grinder is roughly ground, and the composition of the lapping liquid of employing is: aluminium oxide 20wt%, grinding fluid 0.2wt%, grinding aid liquid 0.3wt%, surplus is deionized water, and lapping liquid flow is 40ml/min, grinding pressure 100g/cm
2, rotating speed 60r/min, the granularity of the lapping liquid that corase grind adopts is W7;
Wherein, lapping liquid adopts the mode instiled to enter in the ceramic ring on polishing pad, by ceramic ring, lapping liquid is uniformly distributed at polishing pad, to reach better grinding effect;
Polyurethane polishing pad refines, and fine grinding and corase grind are adopted in a like fashion, and the granularity of the lapping liquid of just fine grinding employing is W1.5;
Finally on the FIWEL N0054 type polishing pad of polishing machine, carry out chemically mechanical polishing, pH value is 9.5, and polish pressure is 100g/cm
2, rotating speed 80r/min, described polishing fluid comprises: silica 1 0wt%, and clorox is 2wt%, and AEO 0.01wt%, PH conditioning agent is NaOH and the triisopropanolamine of volume ratio 1:3, and surplus is deionized water.
First adopt granularity to be the polishing fluid of 50nm, large discharge 40ml/min carries out polishing, then transfers the polishing fluid of granularity 30nm to, and flow is that 10ml/min carries out polishing.
Obtain CdS wafer.
Embodiment 8
A kind of finishing method for CdS wafer that the embodiment of the present invention provides, the method comprises:
Ceramic wafer is heated to 80 degree, then by liquid wax uniform application on ceramic wafer, then CdS wafer is fixed on ceramic wafer;
The polyurethane polishing pad ceramic wafer being fixed with CdS wafer being placed on grinder is roughly ground, the composition of the lapping liquid adopted is: the part by weight of aluminium oxide and boron carbide 5wt%(aluminium oxide and boron carbide is greater than 4:1), grinding fluid 0.3wt%, grinding aid liquid 0.2wt%, surplus is deionized water, lapping liquid flow is 50ml/min, grinding pressure 150g/cm
2, rotating speed 80r/min, the granularity of the lapping liquid that corase grind adopts is W7;
Wherein, lapping liquid adopts the mode instiled to enter in the ceramic ring on polishing pad, by ceramic ring, lapping liquid is uniformly distributed at polishing pad, to reach better grinding effect;
Polyurethane polishing pad refines, and fine grinding and corase grind are adopted in a like fashion, and the granularity of the lapping liquid of just fine grinding employing is W1.5;
Finally on the FIWEL N0054 type polishing pad of polishing machine, carry out chemically mechanical polishing, pH value is 9.5, and polish pressure is 120g/cm
2rotating speed 100r/min, described polishing fluid comprises: the part by weight of silica and cerium oxide 1wt%(silica and cerium oxide is greater than 4:1), hydrogen peroxide is 1wt%, AEO 0.01wt%, PH conditioning agent is NaOH and the triisopropanolamine of volume ratio 1:3, and surplus is deionized water.
First adopt granularity to be the polishing fluid of 40nm, large discharge 80ml/min carries out polishing, then transfers the polishing fluid of granularity 20nm to, and flow is that 20ml/min carries out polishing.
Obtain CdS wafer.
Embodiment 9
A kind of finishing method for CdS wafer that the embodiment of the present invention provides, the method comprises:
Ceramic wafer is heated to 80 degree, then by liquid wax uniform application on ceramic wafer, then CdS wafer is fixed on ceramic wafer;
The polyurethane polishing pad ceramic wafer being fixed with CdS wafer being placed on grinder is roughly ground, and the composition of the lapping liquid of employing is: aluminium oxide 30wt%, grinding fluid 0.5wt%, grinding aid liquid 0.5wt%, surplus is deionized water, and lapping liquid flow is 1ml/min, grinding pressure 50g/cm
2, rotating speed 40r/min, the granularity of the lapping liquid that corase grind adopts is W7;
Wherein, lapping liquid adopts the mode instiled to enter in the ceramic ring on polishing pad, by ceramic ring, lapping liquid is uniformly distributed at polishing pad, to reach better grinding effect;
Polyurethane polishing pad refines, and fine grinding and corase grind are adopted in a like fashion, and the granularity of the lapping liquid of just fine grinding employing is W1.5;
Finally on the FIWEL N0054 type polishing pad of polishing machine, carry out chemically mechanical polishing, pH value is 9.5, and polish pressure is 60g/cm
2rotating speed 60r/min, described polishing fluid comprises: the part by weight of silica and cerium oxide 15wt%(silica and cerium oxide is greater than 4:1), clorox is 3wt%, AEO 0.01wt%, PH conditioning agent is NaOH and the triethanolamine of volume ratio 1:5, and surplus is deionized water.
First adopt granularity to be the polishing fluid of 35nm, large discharge 40ml/min carries out polishing, then transfers the polishing fluid of granularity 25nm to, and flow is that 10ml/min carries out polishing.
Obtain CdS wafer.
Embodiment 10
A kind of finishing method for CdS wafer that the embodiment of the present invention provides, the method comprises:
Ceramic wafer is heated to 80 degree, then by liquid wax uniform application on ceramic wafer, then CdS wafer is fixed on ceramic wafer;
The polyurethane polishing pad ceramic wafer being fixed with CdS wafer being placed on grinder is roughly ground, the composition of the lapping liquid adopted is: the part by weight of the mixture 30wt%(aluminium oxide of aluminium oxide and boron carbide and carborundum and the composition of another two kinds is greater than 4:1), grinding fluid 0.5wt%, grinding aid liquid 0.5wt%, surplus is deionized water, lapping liquid flow is 1ml/min, grinding pressure 100g/cm
2, rotating speed 50r/min, the granularity of the lapping liquid that corase grind adopts is W7;
Wherein, lapping liquid adopts the mode instiled to enter in the ceramic ring on polishing pad, by ceramic ring, lapping liquid is uniformly distributed at polishing pad, to reach better grinding effect;
Polyurethane polishing pad refines, and fine grinding and corase grind are adopted in a like fashion, and the granularity of the lapping liquid of just fine grinding employing is W1.5;
Finally on the FIWEL N0054 type polishing pad of polishing machine, carry out chemically mechanical polishing, pH value is 9.5, and polish pressure is 60g/cm
2, rotating speed 60r/min, described polishing fluid comprises: silica 1 5wt%, and clorox is 3wt%, and AEO 0.01wt%, PH conditioning agent is NaOH and the triethanolamine of volume ratio 1:2, and surplus is deionized water.
First adopt granularity to be the polishing fluid of 30nm, large discharge 30ml/min carries out polishing, then transfers the polishing fluid of granularity 20nm to, and flow is that 10ml/min carries out polishing.
Obtain CdS wafer.
In sum, embodiments provide a kind of finishing method for CdS wafer, can following beneficial effect be brought:
Roughly ground CdS wafer by method of the present invention, refine and chemical mechanical polish process, the surfacing of the CdS wafer obtained, roughness reaches below 1nm, effectively reduces the damage of plane of crystal, improves the quality of plane of crystal.
The above; be only the present invention's preferably detailed description of the invention, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claims.
Claims (10)
1. for a finishing method for CdS wafer, it is characterized in that, comprising:
CdS wafer is roughly ground on polyurethane polishing pad, and then refine, wherein, the proportioning of the lapping liquid that corase grind and fine grinding adopt is: abrasive material 5 ~ 30wt%, grinding fluid 0.1 ~ 0.50wt%, grinding aid liquid 0.1 ~ 0.50wt%, surplus is deionized water, lapping liquid flow is 1 ~ 50ml/min, grinding pressure 50 ~ 150g/cm
2, rotating speed 40 ~ 80r/min, the granularity of the lapping liquid that corase grind adopts is W7, and the granularity of the lapping liquid that fine grinding adopts is W1.5;
Described CdS wafer after fine grinding is carried out chemically mechanical polishing on synthetic leather polishing pad, and the size of the granularity of polishing fluid is 20 ~ 60nm, and pH value is 9.5, and polish pressure is 60 ~ 120g/cm
2, rotating speed 60 ~ 100r/min, described polishing fluid comprises: nanometer abrasive 1 ~ 15wt%, and oxidant is 1 ~ 3wt%, surfactant 0.01wt%, PH conditioning agent, and surplus is deionized water.
2. method according to claim 1, is characterized in that, described polyurethane polishing pad is LP-66 type polishing pad.
3. method according to claim 1, it is characterized in that, described abrasive material is aluminium oxide, or the mixture of aluminium oxide and boron carbide, or the mixture of aluminium oxide and carborundum, or the mixture of aluminium oxide, boron carbide and carborundum, when described abrasive material is mixture, the weight fraction that described aluminium oxide accounts for described mixture is greater than 80%.
4. method according to claim 1, is characterized in that, described synthetic leather polishing pad is FIWELN0054 type polishing pad.
5. method according to claim 1, is characterized in that, polishing fluid comprises: nanometer abrasive 3 ~ 10wt%, and oxidant is 1 ~ 2.5wt%, surfactant 0.01wt%, PH conditioning agent, and surplus is deionized water.
6. method according to claim 5, it is characterized in that, described nanometer abrasive comprises silica, or the mixture of silica and cerium oxide, when described nanometer abrasive be silica and cerium oxide time, the part by weight of silica and cerium oxide is greater than 4:1.
7. the method according to claim 1-6 any one, is characterized in that, the flow 10 ~ 80ml/min of described polishing fluid.
8. method according to claim 5, it is characterized in that, described oxidant is the mixture of clorox or clorox and hydrogen peroxide, and when described oxidant is the mixture of clorox and hydrogen peroxide, the volume ratio of clorox and hydrogen peroxide is greater than 5:1.
9. the method according to claim 1-6 any one, is characterized in that, described surfactant is nonionic surfactant, comprises one or more mixtures in AEO, polyoxyethylate amide and polyalcohol.
10. the method according to claim 1-6 any one, it is characterized in that, described pH value conditioning agent is inorganic solution and organic solution, described inorganic solution is one or more in potassium hydroxide and NaOH, described organic solution is triisopropanolamine, one or both in triethanolamine, the ratio of described inorganic solution and organic solution is 1:1 ~ 5.
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