CN102952467A - Polishing solution and method for polishing cadmium sulfide (CdS) wafer by applying same - Google Patents
Polishing solution and method for polishing cadmium sulfide (CdS) wafer by applying same Download PDFInfo
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- CN102952467A CN102952467A CN2012104449345A CN201210444934A CN102952467A CN 102952467 A CN102952467 A CN 102952467A CN 2012104449345 A CN2012104449345 A CN 2012104449345A CN 201210444934 A CN201210444934 A CN 201210444934A CN 102952467 A CN102952467 A CN 102952467A
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Abstract
The invention discloses a polishing solution used for chemico-mechanical polishing, which comprises polishing solution for rough polishing and polishing solution for fine polishing, wherein the polishing solution for rough polishing comprises 5-10wt% of nano grinding material, 1.5-3wt% of oxidant, 0.01wt% of surface active agent, pH regulator and the balance of deionized water, and has the particle size of 60-100nm and the pH value of 9.5; the polishing solution for fine polishing comprises 1-5wt% of nano grinding material, 0.5-1.5wt% of oxidant, 0.01wt% of surface active agent, pH regulator and the balance of deionized water, and has the particle size of 15-30nm and the pH value of 9.5; and the invention also relates to a method for carrying out chemico-mechanical polishing on a cadmium sulfide (CdS) wafer by applying the polishing solution, which comprises the steps of: carrying out rough polishing on the CdS wafer to be polished by the polishing solution for rough polishing, and then carrying out fine polishing on the CdS wafer by the polishing solution for fine polishing after rough polishing, wherein during the rough polishing and the fine polishing, the polishing pressure is 60-120g/cm<2>, the rotating speed is 60-100r/min, and the flow rate of the corresponding polishing solution is 50-200ml/min. The invention is simple in polishing technology, easy in operation and less in damage caused by the used polishing solution.
Description
Technical field
The present invention relates to the crystalline material processing technique field, relate in particular to polishing fluid and use this polishing fluid to the finishing method of CdS wafer polishing.
Background technology
II-VI family monocrystal material is good material for detector and laserable material, CdS is the II-VI compound semiconductor of directly making a leapleap forward, it is a kind of preferably window material and buffer layer material, is commonly used to make photochemical catalysis, semiconducter device, luminescent device, laser and photosensor.CdS can make ultraviolet detector, is again good material of infrared window, therefore is used to the infrared or ultraviolet two-color guidance of guided missile.Therefore, research has very high application prospect and military significance to the CdS monocrystal material.
The surface quality of CdS monocrystalline and its performance of devices are closely related, but the CdS single-crystal surface roughness after the polished finish of existing CdS monocrystalline is large, and polishing effect is bad.
Summary of the invention
In view of above-mentioned analysis, the present invention aims to provide a kind of polishing fluid and uses this polishing fluid to the finishing method of CdS wafer polishing, and is large in order to solve in the prior art CdS single-crystal surface roughness after the polished finish of CdS monocrystalline, the problem that polishing effect is bad.
Purpose of the present invention mainly is achieved through the following technical solutions:
A kind of polishing fluid for chemically machinery polished, described polishing fluid comprise for the polishing fluid of rough polishing and are used for the smart polishing fluid of throwing; Wherein:
The polishing fluid of described rough polishing comprises: nanometer abrasive 5 ~ 10wt%, and oxygenant is 1.5 ~ 3wt%, tensio-active agent 0.01wt%, the PH conditioning agent, surplus is deionized water, and granularity is 20 ~ 50nm, and pH value is 9.5;
The described smart polishing fluid of throwing comprises: nanometer abrasive 1 ~ 5wt%, and oxygenant is 0.5 ~ 1.5wt%, tensio-active agent 0.01wt%, the PH conditioning agent, surplus is deionized water, and granularity is 10 ~ 30nm, and pH value is 9.5.
Preferably, described nanometer abrasive comprises silicon-dioxide, the perhaps mixture of silicon-dioxide and cerium oxide, and when described nanometer abrasive was silicon-dioxide and cerium oxide, the part by weight of silicon-dioxide and cerium oxide was greater than 4:1.
Preferably, the pH value conditioning agent comprises inorganic solution and organic solution, wherein, described inorganic solution and described organic solution volume ratio 1:1 ~ 5, described inorganic solution is one or both in potassium hydroxide and the sodium hydroxide, and described organic solution is one or both mixtures in tri-isopropanolamine and the trolamine.
Preferably, described oxygenant is the mixture of clorox or clorox and hydrogen peroxide, and when described oxygenant was the mixture of clorox and hydrogen peroxide, the volume ratio of clorox and hydrogen peroxide was greater than 5:1.
Preferably, described surfactivity comprises one or more mixtures in fatty alcohol-polyoxyethylene ether, polyoxyethylate amide and the polyvalent alcohol.
The present invention also provides a kind of polishing fluid recited above carries out chemically machinery polished to the CdS wafer method of using, the method comprises: utilize the rough polishing polishing fluid to carry out rough polishing to polished CdS wafer, and the smart polishing fluid of throwing of the CdS wafer utilization after the rough polishing is carried out the essence throwing;
Wherein, when carrying out rough polishing polishing and smart polishing, polish pressure is 60 ~ 120g/cm
2, 60 ~ 100 rev/mins of rotating speeds, the flow 5 ~ 100ml/min of corresponding polishing fluid.
Preferably, the flow of the polishing fluid of described rough polishing is 50 ~ 100ml/min.
Preferably, the flow of the described smart polishing fluid of throwing is 5 ~ 10ml/min.
Preferably, the polishing pad of described smart throwing and rough polishing is adopted as FIWEL N0054 type synthetic leather polishing pad.
Beneficial effect of the present invention is as follows:
A kind of polishing fluid provided by the invention and use this polishing fluid to the finishing method of CdS wafer polishing adopts the two step CMP step, is respectively rough polishing and smart the throwing, the polishing fluid that uses in the whole polishing process is in different size except abrasive size, other uniform component samples are not so polishing the abrasive material that only needs to change different-grain diameter, can introduce other impurity, other additional operations have been avoided, glossing is simple, easily operation, and the polishing fluid damage of use is little, easy cleaning, surfaceness is less than 1nm.
Other features and advantages of the present invention will be set forth in the following description, and becoming apparent from specification sheets of part perhaps understood by implementing the present invention.Purpose of the present invention and other advantages can realize and obtain by specifically noted structure in the specification sheets of writing, claims and accompanying drawing.
Description of drawings
Fig. 1 is the schema of finishing method of the CdS wafer polishing of the embodiment of the invention.
Embodiment
Specifically describe the preferred embodiments of the present invention below in conjunction with accompanying drawing, wherein, accompanying drawing consists of the application's part, and is used for explaining together with embodiments of the present invention principle of the present invention.
Embodiment 1
The embodiment of the invention provides a kind of polishing fluid for chemically machinery polished, and this polishing fluid comprises:
Described polishing fluid comprises for the polishing fluid of rough polishing and is used for the smart polishing fluid of throwing; Wherein:
The polishing fluid of described rough polishing comprises: nanometer abrasive 5 ~ 10wt%, and oxygenant is 1.5 ~ 3wt%, tensio-active agent 0.01wt%, the PH conditioning agent, surplus is deionized water, and granularity is 20 ~ 50nm, and pH value is 9.5;
The described smart polishing fluid of throwing comprises: nanometer abrasive 1 ~ 5wt%, and oxygenant is 0.5 ~ 1.5wt%, tensio-active agent 0.01wt%, the PH conditioning agent, surplus is deionized water, and granularity is 10 ~ 30nm, and pH value is 9.5.
Wherein, described nanometer abrasive comprises silicon-dioxide, the perhaps mixture of silicon-dioxide and cerium oxide, and when described nanometer abrasive was silicon-dioxide and cerium oxide, the part by weight of silicon-dioxide and cerium oxide was greater than 4:1.
The pH value conditioning agent comprises inorganic solution and organic solution, wherein, described inorganic solution and described organic solution volume ratio 1:1 ~ 5, described inorganic solution is one or both in potassium hydroxide and the sodium hydroxide, and described organic solution is one or both mixtures in tri-isopropanolamine and the trolamine.
Described oxygenant is the mixture of clorox or clorox and hydrogen peroxide, and when described oxygenant was the mixture of clorox and hydrogen peroxide, the volume ratio of clorox and hydrogen peroxide was greater than 5:1.Described surfactivity comprises one or more mixtures in fatty alcohol-polyoxyethylene ether, polyoxyethylate amide and the polyvalent alcohol.
Nanometer abrasive in the polishing fluid mainly plays the effect of mechanical friction, the pH value conditioning agent is mainly regulated the pH value of polishing fluid, select the composite solution of inorganic solution and organic solution, wherein organic solution can keep the stability of chemical action, make its pH value stable, pH value can not changed along with time lapse, and inorganic solution can strengthen the chemical action of polishing fluid.Nonionic surface active agent has improved the concavo-convex selection ratio of wafer, reduces surface tension, reduces surfaceness; be preferentially adsorbed on the surface of wafer in polishing process, first recess protected, it is little to make it be subject to frictional force; and the polishing speed that protrudes is fast, makes its smooth, perfect surface of acquisition.
Embodiment 2
The embodiment of the invention provides a kind of polishing fluid for chemically machinery polished, and this polishing fluid comprises:
Described polishing fluid comprises for the polishing fluid of rough polishing and is used for the smart polishing fluid of throwing; Wherein:
The polishing fluid of described rough polishing comprises: silicon-dioxide 5wt%, clorox are 1.5wt%, fatty alcohol-polyoxyethylene ether 0.01wt%, and the PH conditioning agent, surplus is deionized water, and granularity is 20nm, and pH value is 9.5;
The described smart polishing fluid of throwing comprises: silica 1 wt%, clorox are 0.5wt%, fatty alcohol-polyoxyethylene ether 0.01wt%, and the PH conditioning agent, surplus is deionized water, and granularity is 10nm, and pH value is 9.5.
Wherein, the pH value conditioning agent comprises inorganic solution and organic solution, described inorganic solution and described organic solution volume ratio 1:1, and described inorganic solution is potassium hydroxide, described organic solution is tri-isopropanolamine.
Described surfactivity is fatty alcohol-polyoxyethylene ether.
Embodiment 3
The embodiment of the invention provides a kind of polishing fluid for chemically machinery polished, and this polishing fluid comprises:
Described polishing fluid comprises for the polishing fluid of rough polishing and is used for the smart polishing fluid of throwing; Wherein:
The polishing fluid of described rough polishing comprises: silica 1 0wt%, clorox are 3wt%, polyoxyethylate amide 0.01wt%, and the PH conditioning agent, surplus is deionized water, and granularity is 50nm, and pH value is 9.5;
The described smart polishing fluid of throwing comprises: silicon-dioxide 5wt%, clorox are 1.5wt%, polyoxyethylate amide 0.01wt%, and the PH conditioning agent, surplus is deionized water, and granularity is 30nm, and pH value is 9.5.
The pH value conditioning agent comprises inorganic solution and organic solution, wherein, described inorganic solution and described organic solution volume ratio 1:5, described inorganic solution is potassium hydroxide, described organic solution is tri-isopropanolamine.
Embodiment 4
The embodiment of the invention provides a kind of polishing fluid for chemically machinery polished, and this polishing fluid comprises:
Described polishing fluid comprises for the polishing fluid of rough polishing and is used for the smart polishing fluid of throwing; Wherein:
The polishing fluid of described rough polishing comprises: the part by weight of silicon-dioxide and cerium oxide aluminium 8wt%(silicon-dioxide and cerium oxide is greater than 4:1), clorox is 2wt%, polyvalent alcohol 0.01wt%, the PH conditioning agent, surplus is deionized water, and granularity is 40nm, and pH value is 9.5;
The described smart polishing fluid of throwing comprises: the part by weight of silicon-dioxide and cerium oxide 1 ~ 5wt%(silicon-dioxide and cerium oxide is greater than 4:1), clorox is 1wt%, polyvalent alcohol 0.01wt%, the PH conditioning agent, surplus is deionized water, and granularity is 15nm, and pH value is 9.5.
The pH value conditioning agent comprises inorganic solution and organic solution, wherein, described inorganic solution and described organic solution volume ratio 1:2, described inorganic solution is sodium hydroxide, described organic solution is trolamine.
Embodiment 5
The embodiment of the invention provides a kind of polishing fluid for chemically machinery polished, and this polishing fluid comprises:
Described polishing fluid comprises for the polishing fluid of rough polishing and is used for the smart polishing fluid of throwing; Wherein:
The polishing fluid of described rough polishing comprises: the part by weight of aluminum oxide and cerium oxide 6wt%(silicon-dioxide and cerium oxide is greater than 4:1), clorox is 1.5 ~ 3wt%, fatty alcohol-polyoxyethylene ether 0.01wt%, the PH conditioning agent, surplus is deionized water, and granularity is 60nm, and pH value is 9.5;
The described smart polishing fluid of throwing comprises: the part by weight of aluminum oxide and cerium oxide 3wt%(silicon-dioxide and cerium oxide is greater than 4:1)), clorox is 0.5 ~ 1.5wt%, fatty alcohol-polyoxyethylene ether 0.01wt%, the PH conditioning agent, surplus is deionized water, and granularity is 25nm, and pH value is 9.5.
The pH value conditioning agent comprises inorganic solution and organic solution, wherein, described inorganic solution and described organic solution volume ratio 1:3, described inorganic solution is potassium hydroxide and sodium hydroxide, described organic solution is tri-isopropanolamine and trolamine.
Embodiment 6
The embodiment of the invention provides a kind of polishing fluid for chemically machinery polished, and this polishing fluid comprises:
Described polishing fluid comprises for the polishing fluid of rough polishing and is used for the smart polishing fluid of throwing; Wherein:
The polishing fluid of described rough polishing comprises: silicon-dioxide and cerium oxide the part by weight of totally 5 ~ 10wt%(silicon-dioxide and cerium oxide greater than 4:1), the mixture of clorox and hydrogen peroxide is that the volume ratio of 1.5 ~ 3wt%(clorox and hydrogen peroxide is greater than 5:1), polyoxyethylate amide 0.01wt%, the PH conditioning agent, surplus is deionized water, granularity is 40nm, and pH value is 9.5;
The described smart polishing fluid of throwing comprises: silicon-dioxide and cerium oxide the ratio of totally 1 ~ 5wt%(silicon-dioxide and cerium oxide greater than 4:1), the mixture of clorox and hydrogen peroxide is that the ratio of 0.5 ~ 1.5wt%(clorox and hydrogen peroxide is greater than 5:1), polyoxyethylate amide 0.01wt%, the PH conditioning agent, surplus is deionized water, granularity is 20nm, and pH value is 9.5.
The pH value conditioning agent comprises inorganic solution and organic solution, wherein, described inorganic solution and described organic solution volume ratio 1:4, described inorganic solution is potassium hydroxide and sodium hydroxide, described organic solution is tri-isopropanolamine and trolamine.
Embodiment 7
The embodiment of the invention provides a kind of polishing fluid for chemically machinery polished, and this polishing fluid comprises:
Described polishing fluid comprises for the polishing fluid of rough polishing and is used for the smart polishing fluid of throwing; Wherein:
The polishing fluid of described rough polishing comprises: silicon-dioxide and cerium oxide are total to the part by weight of 5wt%(silicon-dioxide and cerium oxide greater than 4:1), the mixture of clorox and hydrogen peroxide is that the volume ratio of 1.5wt%(clorox and hydrogen peroxide is greater than 5:1), polyoxyethylate amide and polyvalent alcohol 0.01wt%, the PH conditioning agent, surplus is deionized water, granularity is 25nm, and pH value is 9.5;
The described smart polishing fluid of throwing comprises: the part by weight of nanometer abrasive 1 ~ 5wt%(silicon-dioxide and cerium oxide is greater than 4:1), the mixture of clorox and hydrogen peroxide is that the volume ratio of 0.5 ~ 1.5wt%(clorox and hydrogen peroxide is greater than 5:1), polyoxyethylate amide and polyvalent alcohol 0.01wt%, the PH conditioning agent, surplus is deionized water, granularity is 25nm, and pH value is 9.5.
The pH value conditioning agent comprises inorganic solution and organic solution, wherein, described inorganic solution and described organic solution volume ratio 1:2, described inorganic solution is potassium hydroxide, described organic solution is tri-isopropanolamine.
Embodiment 8
The embodiment of the invention provides a kind of polishing fluid for chemically machinery polished, and this polishing fluid comprises:
Described polishing fluid comprises for the polishing fluid of rough polishing and is used for the smart polishing fluid of throwing; Wherein:
The polishing fluid of described rough polishing comprises: silica 1 0wt%, the mixture of clorox and hydrogen peroxide is that the volume ratio of 1.5 ~ 3wt%(clorox and hydrogen peroxide is greater than 5:1), fatty alcohol-polyoxyethylene ether, polyoxyethylate amide and polyvalent alcohol 0.01wt%, the PH conditioning agent, surplus is deionized water, granularity is 35nm, and pH value is 9.5;
The described smart polishing fluid of throwing comprises: silicon-dioxide 5wt%, the mixture of clorox and hydrogen peroxide is that the volume ratio of 0.5 ~ 1.5wt%(clorox and hydrogen peroxide is greater than 5:1), fatty alcohol-polyoxyethylene ether, polyoxyethylate amide and polyvalent alcohol 0.01wt%, the PH conditioning agent, surplus is deionized water, granularity is 10nm, and pH value is 9.5.
The pH value conditioning agent comprises inorganic solution and organic solution, wherein, described inorganic solution and described organic solution volume ratio 1:1, described inorganic solution is potassium hydroxide, described organic solution is tri-isopropanolamine and trolamine.
Embodiment 9
The embodiment of the invention provides a kind of method that above-mentioned any one polishing fluid carries out chemically machinery polished to the CdS wafer of using, and the method comprises:
Utilize the rough polishing polishing fluid to carry out rough polishing to polished CdS wafer, and the smart polishing fluid of throwing of the CdS wafer utilization after the rough polishing is carried out the essence throwing;
Wherein, when carrying out rough polishing polishing and smart polishing, polish pressure is 60 ~ 120g/cm2,60 ~ 100 rev/mins of rotating speeds, the flow 5 ~ 100ml/min of corresponding polishing fluid.
The finishing method two step CMP that the embodiment of the invention provides is respectively rough polishing and smart the throwing, and the polishing fluid that uses in the whole polishing process is in different size except abrasive size, other uniform component samples, so polishing the abrasive material that only needs to change different-grain diameter, can not introduce other impurity, avoid other additional operations, polishing process is simple, easily operation, the polishing fluid damage of use is little, easy cleaning, can obtain super smooth, super perfect CdS single crystal sheet, surfaceness is less than 1nm.
Embodiment 10
The embodiment of the invention provides a kind of method that above-mentioned any one polishing fluid carries out chemically machinery polished to the CdS wafer of using, and referring to Fig. 1, the method comprises:
S101, utilize the rough polishing polishing fluid to carry out rough polishing to polished CdS wafer;
S102, the smart polishing fluid of throwing of the CdS wafer utilization after the rough polishing is carried out essence throwing.
Wherein, when carrying out rough polishing polishing and smart polishing, polish pressure is 60 ~ 120g/cm
2, 60 ~ 100 rev/mins of rotating speeds.
The flow of the polishing fluid of described rough polishing is 50 ~ 100ml/min, adopts large flow during rough polishing, can remove in the short period of time the affected layer that stays in the process of lapping.
The flow of the described smart polishing fluid of throwing is 5 ~ 10ml/min, adopts low discharge can obtain high-quality glazed surface during smart the throwing.
The polishing pad of described smart throwing and rough polishing is adopted as FIWEL N0054 type synthetic leather polishing pad.
Embodiment 11
The embodiment of the invention provides a kind of method that above-mentioned any one polishing fluid carries out chemically machinery polished to the CdS wafer of using, and the method comprises:
Utilize the rough polishing polishing fluid to carry out rough polishing to polished CdS wafer, and the smart polishing fluid of throwing of the CdS wafer utilization after the rough polishing is carried out the essence throwing;
Wherein, when carrying out rough polishing polishing and smart polishing, polish pressure is 80g/cm
2, 80 rev/mins of rotating speeds.
The flow of the polishing fluid of described rough polishing is 150ml/min.
The flow of the described smart polishing fluid of throwing is 70ml/min.
The polishing pad of described smart throwing and rough polishing is adopted as FIWEL N0054 type synthetic leather polishing pad.
Embodiment 12
The embodiment of the invention provides a kind of method that above-mentioned any one polishing fluid carries out chemically machinery polished to the CdS wafer of using, and the method comprises:
Utilize the rough polishing polishing fluid to carry out rough polishing to polished CdS wafer, and the smart polishing fluid of throwing of the CdS wafer utilization after the rough polishing is carried out the essence throwing;
Wherein, when carrying out rough polishing polishing and smart polishing, polish pressure is 60g/cm
2, 60 rev/mins of rotating speeds.
The flow of the polishing fluid of described rough polishing is 100ml/min.
The flow of the described smart polishing fluid of throwing is 10ml/min.
The polishing pad of described smart throwing and rough polishing is adopted as FIWEL N0054 type synthetic leather polishing pad.
Embodiment 13
The embodiment of the invention provides a kind of method that above-mentioned any one polishing fluid carries out chemically machinery polished to the CdS wafer of using, and the method comprises:
Utilize the rough polishing polishing fluid to carry out rough polishing to polished CdS wafer, and the smart polishing fluid of throwing of the CdS wafer utilization after the rough polishing is carried out the essence throwing;
Wherein, when carrying out rough polishing polishing and smart polishing, polish pressure is 120g/cm
2, 100 rev/mins of rotating speeds.
The flow of the polishing fluid of described rough polishing is 80ml/min.
The flow of the described smart polishing fluid of throwing is 8ml/min.
The polishing pad of described smart throwing and rough polishing is adopted as FIWEL N0054 type synthetic leather polishing pad.
Embodiment 14
The embodiment of the invention provides a kind of method that above-mentioned any one polishing fluid carries out chemically machinery polished to the CdS wafer of using, and the method comprises:
Utilize the rough polishing polishing fluid to carry out rough polishing to polished CdS wafer, and the smart polishing fluid of throwing of the CdS wafer utilization after the rough polishing is carried out the essence throwing;
Wherein, when carrying out rough polishing polishing and smart polishing, polish pressure is 60g/cm
2, 100 rev/mins of rotating speeds.
The flow of the polishing fluid of described rough polishing is 90ml/min.
The flow of the described smart polishing fluid of throwing is 5ml/min.
The polishing pad of described smart throwing and rough polishing is adopted as FIWEL N0054 type synthetic leather polishing pad.
Embodiment 15
The embodiment of the invention provides a kind of method that above-mentioned any one polishing fluid carries out chemically machinery polished to the CdS wafer of using, and the method comprises:
Utilize the rough polishing polishing fluid to carry out rough polishing to polished CdS wafer, and the smart polishing fluid of throwing of the CdS wafer utilization after the rough polishing is carried out the essence throwing;
Wherein, when carrying out rough polishing polishing and smart polishing, polish pressure is 60g/cm
2, 80 rev/mins of rotating speeds.
The flow of the polishing fluid of described rough polishing is 85ml/min.
The flow of the described smart polishing fluid of throwing is 7ml/min.
The polishing pad of described smart throwing and rough polishing is adopted as FIWEL N0054 type synthetic leather polishing pad.
In sum, the embodiment of the invention provides a kind of polishing fluid and has used this polishing fluid to the finishing method of CdS wafer polishing, can bring at least a beneficial effect:
1, a kind of polishing fluid of providing of the embodiment of the invention and use this polishing fluid to the finishing method of CdS wafer polishing, adopt the two step CMP step, respectively rough polishing and smart the throwing, the polishing fluid that uses in the whole polishing process is in different size except abrasive size, other uniform component samples, so only need to change the abrasive material of different-grain diameter in polishing, can not introduce other impurity, other additional operations have been avoided, glossing is simple, easily operation, and the polishing fluid damage of use is little, easy cleaning, surfaceness is less than 1nm.
2, the embodiment of the invention provides a kind of polishing fluid and has used this polishing fluid to the finishing method of CdS wafer polishing, nanometer abrasive in the polishing fluid mainly plays the effect of mechanical friction, the pH value conditioning agent is mainly regulated the pH value of polishing fluid, select the composite solution of inorganic solution and organic solution, wherein organic solution can keep the stability of chemical action, make its pH value stable, pH value can not changed along with time lapse, inorganic solution can strengthen the chemical action of polishing fluid.Nonionic surface active agent has improved the concavo-convex selection ratio of wafer, reduces surface tension, reduces surfaceness; be preferentially adsorbed on the surface of wafer in polishing process, first recess protected, it is little to make it be subject to frictional force; and the polishing speed that protrudes is fast, makes its smooth, perfect surface of acquisition.
The above; only for the better embodiment of the present invention, but protection scope of the present invention is not limited to this, anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claims.
Claims (9)
1. a polishing fluid that is used for chemically machinery polished is characterized in that, described polishing fluid comprises for the polishing fluid of rough polishing and is used for the smart polishing fluid of throwing; Wherein:
The polishing fluid of described rough polishing comprises: nanometer abrasive 5 ~ 10wt%, and oxygenant is 1.5 ~ 3wt%, tensio-active agent 0.01wt%, the PH conditioning agent, surplus is deionized water, and granularity is 20 ~ 50nm, and pH value is 9.5;
The described smart polishing fluid of throwing comprises: nanometer abrasive 1 ~ 5wt%, and oxygenant is 0.5 ~ 1.5wt%, tensio-active agent 0.01wt%, the PH conditioning agent, surplus is deionized water, and granularity is 10 ~ 30nm, and pH value is 9.5.
2. polishing fluid according to claim 1, it is characterized in that described nanometer abrasive comprises silicon-dioxide, perhaps the mixture of silicon-dioxide and cerium oxide, when described nanometer abrasive was silicon-dioxide and cerium oxide, the part by weight of silicon-dioxide and cerium oxide was greater than 4:1.
3. polishing fluid according to claim 1 and 2, it is characterized in that, the pH value conditioning agent comprises inorganic solution and organic solution, wherein, described inorganic solution and described organic solution volume ratio 1:1 ~ 5, described inorganic solution is one or both in potassium hydroxide and the sodium hydroxide, and described organic solution is one or both mixtures in tri-isopropanolamine and the trolamine.
4. polishing fluid according to claim 1 and 2, it is characterized in that, described oxygenant is the mixture of clorox or clorox and hydrogen peroxide, and when described oxygenant was the mixture of clorox and hydrogen peroxide, the volume ratio of clorox and hydrogen peroxide was greater than 5:1.
5. polishing fluid according to claim 1 and 2 is characterized in that, described surfactivity comprises one or more mixtures in fatty alcohol-polyoxyethylene ether, polyoxyethylate amide and the polyvalent alcohol.
6. use above-mentioned any one described polishing fluid carries out chemically machinery polished to the CdS wafer method for one kind, it is characterized in that, the method comprises: utilize the rough polishing polishing fluid to carry out rough polishing to polished CdS wafer, and the smart polishing fluid of throwing of the CdS wafer utilization after the rough polishing is carried out the essence throwing;
Wherein, when carrying out rough polishing polishing and smart polishing, polish pressure is 60 ~ 120g/cm
2, 60 ~ 100 rev/mins of rotating speeds, the flow 5 ~ 100ml/min of corresponding polishing fluid.
7. method according to claim 6 is characterized in that, the flow of the polishing fluid of described rough polishing is 50 ~ 100ml/min.
8. according to claim 6 or 7 described methods, it is characterized in that the flow of the described smart polishing fluid of throwing is 5 ~ 10ml/min.
9. according to claim 6 or 7 described methods, it is characterized in that described smart throw and the polishing pad of rough polishing is adopted as FIWEL N0054 type synthetic leather polishing pad.
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| CN112608685A (en) * | 2020-12-17 | 2021-04-06 | 芯越微电子材料(嘉兴)有限公司 | Chemical mechanical polishing solution for polishing polycrystalline silicon |
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| CN103346078A (en) * | 2013-06-26 | 2013-10-09 | 上海宏力半导体制造有限公司 | Chemical mechanical polishing method |
| CN104449404A (en) * | 2014-12-16 | 2015-03-25 | 河北工业大学 | Polishing solution for chemically mechanically polishing germanium crystal and application method |
| CN104526539A (en) * | 2014-12-16 | 2015-04-22 | 河北工业大学 | Control method for quartz substrate material chemical mechanical polishing surface roughness of gyro optical element |
| CN104449404B (en) * | 2014-12-16 | 2016-08-10 | 河北工业大学 | The polishing fluid of germanium crystal chemically mechanical polishing and using method |
| CN104526539B (en) * | 2014-12-16 | 2017-07-28 | 河北工业大学 | The control method of gyro erected optical element quartz substrate material C MP polished surface roughness |
| CN107953152A (en) * | 2017-12-19 | 2018-04-24 | 北京创昱科技有限公司 | A kind of precise polishing method of GaAs chips |
| CN109439202A (en) * | 2018-12-28 | 2019-03-08 | 天津洙诺科技有限公司 | A kind of silicon nitride CMP polishing fluid and its polishing liquid supply equipment |
| CN111099921A (en) * | 2019-12-26 | 2020-05-05 | 广东萨米特陶瓷有限公司 | Ceramic product applied by combining polished surface micropores with nano material and manufacturing method thereof |
| CN112608685A (en) * | 2020-12-17 | 2021-04-06 | 芯越微电子材料(嘉兴)有限公司 | Chemical mechanical polishing solution for polishing polycrystalline silicon |
| CN112658977A (en) * | 2020-12-17 | 2021-04-16 | 江苏集萃精凯高端装备技术有限公司 | Chemical mechanical polishing method for flaky lutetium oxide laser crystal |
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