CN102969215B - 用于等离子处理腔室的低倾斜度边缘环 - Google Patents
用于等离子处理腔室的低倾斜度边缘环 Download PDFInfo
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Abstract
本发明提供用于等离子处理腔室中的盖环的实施例。一个实施例中,用于等离子处理腔室中的盖环包括环形主体,所述环形主体由含钇(Y)材料制成。主体包括底面,所述底面具有内定位环与外定位环。内定位环比外定位环自主体延伸更远。主体包括内径壁,所述内径壁具有主要壁与次要壁,所述主要壁与次要壁由实质水平岸部分隔。主体还包括顶表面,所述顶表面具有外倾斜顶表面,所述外倾斜顶表面与内倾斜表面会合于尖端。内倾斜表面与垂直于主体的中线的线之间所界定的角度小于约70度。
Description
本申请是2009年9月1日提交的申请号为200980135297.X、国际申请号为PCT/US2009/055596、名称为“LOWSLOPEDEDGERINGFORPLASMAPROCESSINGCHAMBER”的国际专利申请的分案申请。
技术领域
本发明的实施例一般涉及用于等离子处理腔室中的盖环。
背景技术
半导体处理包括多种不同的化学与物理处理,由此在基板上产生精密的集成电路。通过多种等离子处理(诸如,化学气相沉积、物理气相沉积等)产生构成集成电路的材料层。利用光刻胶掩模来使一些材料层图案化,并且利用等离子蚀刻技术来蚀刻一些材料层,以形成用来构成集成电路的结构与器件。
等离子蚀刻处理过程中,驱动蚀刻处理的能量化气体可能非均匀地分散于将被蚀刻的基板上方。等离子非均匀性可能造成粗劣的处理结果,特别是在基板边缘附近。某些蚀刻腔室利用腔室部件(诸如,边缘环与盖环)来改善处理结果。然而,随着临界尺寸缩小以及制造商努力封装更多器件于单一基板上,必须改善处理技术与部件好及时且具成本效应地实现下一代产品。
再者,副产物在蚀刻处理过程中可能会形成于腔室部件上。这些副产物需要腔室部件被定期地清洁以避免不一致或不欲的处理结果。可减少可能污染源以及减少清洁与/或部件替换之间的时间的腔室部件设计的改善是有利的。
因此,需要改进过的腔室部件。
发明内容
提供用于等离子处理腔室中的盖环的实施例。一个实施例中,用于等离子处理腔室的盖环包括环形主体,所述环形主体由含钇(Y)材料所制造。主体包括底面,所述底面具有内定位环与外定位环。内定位环比外定位环自所述主体延伸更远。主体包括内径壁,所述内径壁具有主要壁与次要壁,所述主要壁与次要壁由实质水平岸部(land)分隔。主体还包括顶表面,所述顶表面具有外倾斜顶表面,所述外倾斜顶表面与内倾斜表面会合于尖端。内倾斜表面与垂直于主体中线的线之间所界定的角度小于约70度。
另一实施例中,用于等离子处理腔室中的盖环包括环形主体,所述环形主体由含钇(Y)材料所制造。主体包括底面,所述底面具有内定位环与外定位环。内定位环比外定位环自所述主体延伸更远。主体还具有顶表面,所述顶表面具有实质水平主要顶表面、实质水平内顶表面与实质水平岸部。主要顶表面置于内顶表面的外侧与上方。内顶表面置于岸部的外侧与上方。
某些实施例中,盖环由氧化钇(Y2O3)块所制造。
附图说明
为了更详细地了解本发明的上述特征,可参照实施例(某些描绘于附图中)来理解本发明简短概述于上的特定描述。
图1描绘示范性等离子蚀刻腔室的一个实施例的概要图示,所述等离子蚀刻腔室受益于本发明实施例;
图2是图1的盖环的部分概要剖面图;及
图3是盖环的另一实施例的部分概要剖面图。
然而,需注意附图仅描绘本发明的典型实施例而因此不被视为本发明范围的限制因素,因为本发明可允许其它等效实施例。
为了促进理解,尽可能应用相同的元件符号来标示图示中相同的元件。预期一个实施例的元件与特征结构可有利地并入其它实施例而不需详述。
具体实施方式
本发明的实施例提供蚀刻性能与使用寿命增强的腔室部件。一个实施例中,腔室部件是盖环,所述盖环适于与基板接合,所述基板置于基板支撑座上。
图1描绘示范性等离子处理腔室100的一个实施例的示意剖面图,等离子处理腔室100可自本发明实施例受益。此处显示的腔室实施例被提供用来说明而非用来限制本发明的范围。适于自本发明受益的等离子处理腔室的一个实例为DPSAdvantEdgeTM蚀刻反应器,DPSAdvantEdgeTM蚀刻反应器可自美国加州圣克拉拉市的应用材料公司取得。可预期其它等离子处理腔室适于自本发明受益,包括来自其它制造商的那些腔室。
腔室100包括真空腔室主体110,所述真空腔室主体110具有导电腔室壁130与底部108。腔室壁130连结至电接地134。盖170配置于腔室壁130上,以封围内部容积178,内部容积178界定于腔室主体110中。至少一个线圈部分112置于腔室壁130外侧。线圈部分112可选择性地由DC功率源154供给能量,所述DC功率源154能够产生至少5V以提供形成于处理腔室100中的等离子处理的控制旋钮。
衬垫131置于内部容积178中以促进腔室100的清洁。在选定的间隔中可快速地将蚀刻处理的副产物与残余物自衬垫131移除。
基板支撑座116置于处理腔室100的底部108上且位于气体扩散器132下方。处理区180界定于内部容积178中且介于基板支撑座116与扩散器132之间。基板支撑座116可包括静电夹盘126,所述静电夹盘126用以在处理过程中固持基板114于气体扩散器132下方的支撑座116的表面140上。静电夹盘126由DC功率供应器120所控制。
一个实施例中,盖环102配置为围绕支撑座116的外周边并实质环绕基板114。一部分的盖环102可配置于基板114的边缘下方。一个实施例中,盖环102由含钇(Y)材料(例如,氧化钇(Y2O3)块)所构成。盖环102的材料提供增强的抗蚀性,由此改善腔室部件的使用寿命,同时减少维修与制造成本。关于盖环102的额外详细内容将参照图2论述于下。
支撑座116可通过匹配网络124耦接至RF偏压源122。偏压源122通常能够产生2kHz至13.56MHz的可调频率以及0与5000瓦特间的功率的RF信号。偏压源122选择性地为DC或脉冲式DC源。
支撑座116还包括内与外温度调节区域174、176。各个区域174、176可包括至少一个温度调节装置(诸如,电阻式加热器或循环冷却剂的导管),以便可控制配置于支撑座上的基板的径向温度梯度。
腔室100的内部为高度真空容器,所述真空容器通过排气口135耦接至真空泵136,所述排气口135穿过腔室壁130与/或腔室底部108而形成。配置于排气口135中的节流阀127搭配真空泵136而应用以控制处理腔室100内的压力。排气口135的位置以及腔室主体110的内部容积178中的其它流动限制大幅地影响处理腔室102中的传导性与气流分布。
气体扩散器132提供了导管,至少一种处理气体经由所述导管而导入处理区180。一个实施例中,气体扩散器132可以不对称方式提供处理气体至处理区180,这可用来调协上述由其它腔室部件(即,排气口的位置、基板支撑座或其它腔室部件的几何形状)造成的传导性与气流分布,以致用均匀或选择的分布将气体流与物种运送至基板。
图1描述的一个说明性实施例中,气体扩散器132包括至少两个气体分配器160、162、架设板128及气体分配板164。气体分配器160、162通过处理腔室100的盖170而耦接至一或更多个气体面板138,并且气体分配器160、162也耦接至架设板128或气体分配板164的至少一者。可独立地控制通过气体分配器160、162的气体流动。虽然显示气体分配器160、162耦接至单一气体面板138,但可预期气体分配器160、162可耦接至一或更多个共享与/或个别气体源。由气体面板138提供的气体输送进入板128、164之间界定的区域172,接着通过数个孔168离开而进入处理区180,所述数个孔168穿过气体分配板164而形成。
架设板128耦接至支撑座116对面的盖170。由RF导电材料制造或由RF导电材料覆盖的架设板128,通过阻抗转换器119(例如,四分之一波长匹配短截线)而耦接至RF源118。源118通常能够产生60MHz至162MHz的可调频率以及0与3000瓦特间的功率的RF信号。架设板128与/或气体分配板164由RF源118提供动力以维持处理区180中由处理气体形成的等离子。
图2是盖环102的一个实施例的部分剖面图。盖环102具有主体202,主体202由含钇(Y)材料构成。一个实施例中,主体202可由氧化钇(Y2O3)块或其它适当材料所构成。替代地,主体202可包括钇(Y)金属、钇合金等等。又其它实施例中,主体202可由钇掺杂材料(诸如,钇掺杂石英、钇掺杂铝(Al)金属、钇掺杂氧化铝(Al2O3)、钇掺杂铝合金或钇掺杂氮化铝(AlN))所构成。
图2的实施例中,主体202包括外径204与内径206。一个实施例中,盖环102的内径206为约11.50至约11.75英寸。盖环102的内径206包括主要壁208与次要壁210。主要壁208的直径小于次要壁210的直径。主要壁208与次要壁210通常具有垂直方向,而在垂直方向中,主要壁208的长度大于次要壁210。主要壁208也低于次要壁210。
梯部212界定于主要壁208与次要壁210之间。梯部212包括实质水平岸部214,实质水平岸部214在主要壁208与次要壁210之间延伸。梯部212界定基板接收穴部,以致基板114的周边延伸于岸部214的一部分的上方,如图1所示。
盖环102的主体202还包括内定位环216与外定位环224,内定位环216与外定位环224自主体202的底面延伸。内定位环216包括内壁218、底部220与外壁222。内壁218与外壁222在方向上是实质垂直且同心的,而底部220是实质水平的。内壁216的直径大于次要壁210的直径。
外定位环224置于内定位环216外侧,且外定位环224具有内壁226、底部228与外壁230。内壁226与外壁230在方向上是实质垂直且同心的,而底部228是实质水平的。外定位环224的底部228自主体202突出的距离短于内定位环216的底部220自主体202突出的距离。外定位环224的外壁230坐落于外径204。
内定位环216与外定位环224在盖环102的底面中界定凹槽242。凹槽242被配置为与支撑座116上的匹配特征相啮合,以便盖环102准确地坐落于腔室100中的支撑座116上。
主体202的顶表面包括外倾斜顶表面232、内倾斜顶表面236与内顶表面240。内顶表面240在方向上是实质水平的,且内顶表面240自内倾斜顶表面236延伸至次要壁210。
外倾斜顶表面232与内倾斜顶表面236会合于盖环102的尖端234。内倾斜顶表面236通常向上与向外倾斜,并且内倾斜顶表面236相对于垂直于盖环102的中线而界定的线(例如,外定位环224的底部228所界定)以小于约70度的角度238而定向。一个实施例中,角度238为约60度。内倾斜顶表面236的倾斜具有水平面凸起的方向,所述方向可让原位环清洁过程中应用的离子与反应物种更直接地冲击凸起表面。因此,在环的原位清洁过程中离子冲击能量与/或冲击顶表面236的反应物种数量剧烈地改善盖环102的清洁。盖环102的外形明显提高在需要将盖环102移出腔室100进行异地清洁之前处理基板的数目。与传统环相比,改良的盖环102已经显示清洁之间RF小时的改善,从传统环的300RF/小时至约1000RF/小时。再者,因为内倾斜顶表面236的倾斜具有可提高原位清洁的方向,通常在金属蚀刻处理(例如,铝蚀刻)中出现的蚀刻副产物(特别是聚合物副产物)在原位清洁后较少存在于盖环102上。而盖环102上较少存在副产物的话,可有利地减少随后处理过程中可能的微粒缺陷。较干净的盖环102也可提高基板对基板蚀刻的结果,如减少微负载效应所示,以及可让结构准确地较靠近基板边缘而制造(与传统技术相比)。
图3描述盖环300的另一实施例,所述盖环300可有利地用于上述的处理腔室100与其它等离子处理腔室。盖环300通常包括主体302,所述主体302可由上文参照盖环102的主体202所确认的材料制造。
图3的实施例中,主体302包括外径304与内径306。一个实施例中,盖环300的内径306为约11.50至约11.75英寸。盖环300的内径306包括主要壁308与次要壁310。主要壁308的直径小于次要壁310的直径。主要壁308与次要壁310通常具有垂直与同心方向,而在垂直方向中,主要壁308的长度大于次要壁310。主要壁308也低于次要壁310。
梯部312界定于主要壁308与次要壁310之间。梯部312包括实质水平岸部314,实质水平岸部314在主要壁308与次要壁310之间延伸。梯部312界定基板接收穴部,以致基板114的周边在置于支撑座116上时延伸于岸部314的一部分的上方,相似于图1中所示的盖环102的岸部214。
盖环300的主体302还包括内定位环316与外定位环324,内定位环316与外定位环324自主体302的底面延伸。一个实施例中,内定位环316与外定位环324可实质相同于上述的盖环102的内定位环216与外定位环224。
一个实施例中,内定位环316包括内壁318、底部320与外壁322。内壁318与外壁322在方向中上是实质垂直的,而底部320是实质水平的。内壁316的直径大于次要壁310的直径。
外定位环324置于内定位环316外侧,且外定位环324具有内壁326、底部328与外壁330。内壁326与外壁330在方向上是实质垂直且同心的,而底部328是实质水平的。外定位环324的底部328自主体302突出的距离短于内定位环316的底部320自主体302突出的距离。外定位环324的外壁330坐落于外径304。
内定位环316与外定位环324在盖环300的底面中界定凹槽342。凹槽342被配置为与支撑座116上的匹配特征啮合,以便盖环300准确地坐落支撑座116上。
主体302的顶表面包括主要顶表面332、内顶表面334与岸部314。主要顶表面332与内顶表面334在方向上是实质水平的,而主要顶表面332配置于内顶表面334外侧。内顶表面334凹于主要顶表面332下,而岸部314凹于内顶表面334下。
壁336配置于主要顶表面332与内顶表面334之间。壁336具有实质垂直方向,且壁336同心于壁310。
顶表面332、334的实质水平方向促进改良环的原位清洁,这种促进是通过允许更直接的离子冲击以及允许曝露于更多反应物种而加以完成。如上所述,改良的盖环300已经显示清洁之间RF小时的明显改善、降低微粒产生以及减少微负载效应。
因此,已经提供盖环的实施例,与传统设计相比,所述盖环通过促进等离子均匀性与减少微负载而可让器件制造成更靠近基板的周边。再者,环的结构提高清洁,由此改善基板至基板处理,并减少清洁过程中微粒移除不完全造成的微粒产生的可能性。
虽然上述涉及本发明的实施例,但可在不悖离本发明的基本范围下设计出本发明的其它与更多实施例,而本发明的范围由下方的权利要求书所决定。
Claims (4)
1.一种用于等离子处理腔室中的盖环,所述盖环包括:
环形主体,所述环形主体由含钇(Y)材料所制成,所述环形主体包括:
底面,所述底面具有内定位环与外定位环,所述内定位环比所述外定位环自所述环形主体延伸更远,所述内定位环具有内壁,其中所述外定位环具有界定所述盖环的外径的外壁,所述外定位环的所述外壁被布置成覆盖基板支撑座的最外径,所述外定位环的底部比所述内定位环的底部自所述环形主体突出更短的距离;
凹槽,所述凹槽被界定于所述内定位环与所述外定位环之间的所述底面中;
内径壁,所述内径壁具有主要壁与次要壁,所述主要壁与次要壁由实质水平岸部所分隔,所述次要壁具有大于所述主要壁而小于所述内定位环的内壁的直径;并且其中所述主要壁位于所述凹槽上方;及
顶表面,所述顶表面具有实质水平主要顶表面、实质水平内顶表面与所述实质水平岸部,并且其中所述内定位环的所述内壁位于所述主要顶表面的径向内侧,所述外定位环的所述外壁位于所述主要顶表面的径向外侧,所述实质水平主要顶表面配置于所述实质水平内顶表面外侧与上方,所述实质水平内顶表面配置于所述实质水平岸部外侧与上方,并且其中所述次要壁和所述实质水平岸部界定基板接收穴部,并且所述内定位环和所述外定位环位于所述基板接收穴部的径向外侧。
2.如权利要求1所述的盖环,其中所述环形主体由氧化钇(Y2O3)块所制成。
3.如权利要求1所述的盖环,其中所述环形主体由一材料制成,其中所述材料是钇金属、钇合金或钇掺杂材料。
4.如权利要求1所述的盖环,其中所述内径壁具有11.50英寸至11.75英寸的直径。
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Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090221150A1 (en) * | 2008-02-29 | 2009-09-03 | Applied Materials, Inc. | Etch rate and critical dimension uniformity by selection of focus ring material |
US8597462B2 (en) * | 2010-05-21 | 2013-12-03 | Lam Research Corporation | Movable chamber liner plasma confinement screen combination for plasma processing apparatuses |
US20110297088A1 (en) * | 2010-06-04 | 2011-12-08 | Texas Instruments Incorporated | Thin edge carrier ring |
WO2012024061A2 (en) * | 2010-08-20 | 2012-02-23 | Applied Materials, Inc. | Extended life deposition ring |
US8744250B2 (en) * | 2011-02-23 | 2014-06-03 | Applied Materials, Inc. | Edge ring for a thermal processing chamber |
US9905443B2 (en) * | 2011-03-11 | 2018-02-27 | Applied Materials, Inc. | Reflective deposition rings and substrate processing chambers incorporating same |
US8988848B2 (en) | 2011-12-15 | 2015-03-24 | Applied Materials, Inc. | Extended and independent RF powered cathode substrate for extreme edge tunability |
KR101923050B1 (ko) | 2012-10-24 | 2018-11-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 급속 열 처리를 위한 최소 접촉 에지 링 |
US9147558B2 (en) | 2013-01-16 | 2015-09-29 | Applied Materials, Inc. | Finned shutter disk for a substrate process chamber |
US8865012B2 (en) | 2013-03-14 | 2014-10-21 | Applied Materials, Inc. | Methods for processing a substrate using a selectively grounded and movable process kit ring |
CN105009252B (zh) * | 2013-03-14 | 2017-07-28 | 应用材料公司 | 使用选择性接地且可移动的处理配环处理基板的方法与装置 |
KR102253990B1 (ko) * | 2013-06-26 | 2021-05-18 | 어플라이드 머티어리얼스, 인코포레이티드 | Icp 플라즈마 프로세싱 챔버에서의 기판 최외곽 엣지 결함 감소, 높은 수율을 위한 단일 링 디자인 |
CN103887138B (zh) * | 2014-03-31 | 2017-01-18 | 上海华力微电子有限公司 | 一种刻蚀设备的边缘环 |
US10351639B2 (en) * | 2014-12-12 | 2019-07-16 | Exxonmobil Research And Engineering Company | Organosilica materials for use as adsorbents for oxygenate removal |
US10658222B2 (en) * | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
US20160289827A1 (en) * | 2015-03-31 | 2016-10-06 | Lam Research Corporation | Plasma processing systems and structures having sloped confinement rings |
CN105206559B (zh) * | 2015-08-21 | 2018-09-14 | 沈阳拓荆科技有限公司 | 一种晶圆承载定位机构及安装方法 |
JP6937753B2 (ja) * | 2015-12-07 | 2021-09-22 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 融合されたカバーリング |
JP3210105U (ja) | 2016-03-04 | 2017-04-27 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | ユニバーサルプロセスキット |
US10766057B2 (en) | 2017-12-28 | 2020-09-08 | Micron Technology, Inc. | Components and systems for cleaning a tool for forming a semiconductor device, and related methods |
US20190301012A1 (en) * | 2018-04-02 | 2019-10-03 | Veeco Instruments Inc. | Wafer processing system with flow extender |
KR20210088723A (ko) * | 2018-12-03 | 2021-07-14 | 어플라이드 머티어리얼스, 인코포레이티드 | 척킹 및 아크 발생 성능이 개선된 정전 척 설계 |
TWM602283U (zh) * | 2019-08-05 | 2020-10-01 | 美商蘭姆研究公司 | 基板處理系統用之具有升降銷溝槽的邊緣環 |
US11415538B2 (en) | 2020-03-06 | 2022-08-16 | Applied Materials, Inc. | Capacitive sensor housing for chamber condition monitoring |
US11545346B2 (en) | 2020-03-06 | 2023-01-03 | Applied Materials, Inc. | Capacitive sensing data integration for plasma chamber condition monitoring |
US11581206B2 (en) | 2020-03-06 | 2023-02-14 | Applied Materials, Inc. | Capacitive sensor for chamber condition monitoring |
US20230066418A1 (en) * | 2021-08-30 | 2023-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Focus ring for a plasma-based semiconductor processing tool |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6284093B1 (en) * | 1996-11-29 | 2001-09-04 | Applied Materials, Inc. | Shield or ring surrounding semiconductor workpiece in plasma chamber |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3210207B2 (ja) | 1994-04-20 | 2001-09-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JPH10303288A (ja) * | 1997-04-26 | 1998-11-13 | Anelva Corp | プラズマ処理装置用基板ホルダー |
US6090251A (en) | 1997-06-06 | 2000-07-18 | Caliper Technologies, Inc. | Microfabricated structures for facilitating fluid introduction into microfluidic devices |
WO1999023691A2 (en) * | 1997-11-03 | 1999-05-14 | Asm America, Inc. | Improved low mass wafer support system |
US6872281B1 (en) | 2000-09-28 | 2005-03-29 | Lam Research Corporation | Chamber configuration for confining a plasma |
AU2002366921A1 (en) * | 2001-12-13 | 2003-07-09 | Tokyo Electron Limited | Ring mechanism, and plasma processing device using the ring mechanism |
US20040027781A1 (en) * | 2002-08-12 | 2004-02-12 | Hiroji Hanawa | Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling |
KR100578129B1 (ko) * | 2003-09-19 | 2006-05-10 | 삼성전자주식회사 | 플라즈마 식각 장치 |
US9127362B2 (en) * | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
US8475625B2 (en) * | 2006-05-03 | 2013-07-02 | Applied Materials, Inc. | Apparatus for etching high aspect ratio features |
-
2008
- 2008-09-10 US US12/207,695 patent/US8287650B2/en active Active
-
2009
- 2009-09-01 KR KR1020117008199A patent/KR20110056406A/ko not_active Application Discontinuation
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-
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Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6284093B1 (en) * | 1996-11-29 | 2001-09-04 | Applied Materials, Inc. | Shield or ring surrounding semiconductor workpiece in plasma chamber |
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