CN102967977A - Pixel array substrate - Google Patents
Pixel array substrate Download PDFInfo
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- CN102967977A CN102967977A CN2012105299006A CN201210529900A CN102967977A CN 102967977 A CN102967977 A CN 102967977A CN 2012105299006 A CN2012105299006 A CN 2012105299006A CN 201210529900 A CN201210529900 A CN 201210529900A CN 102967977 A CN102967977 A CN 102967977A
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- 238000009413 insulation Methods 0.000 claims description 58
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
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- 239000000463 material Substances 0.000 description 8
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- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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Images
Abstract
The invention discloses a pixel array substrate, which comprises a substrate, a plurality of scanning lines, a first insulating layer, a plurality of data lines, a plurality of common electrode lines, a plurality of pixel structures, a second insulating layer and a common electrode. The scanning line is disposed on the substrate and covered by the first insulating layer. The data lines and the common electrode lines are arranged on the first insulating layer and are alternately arranged, and the common electrode lines and the scanning lines are intersected to define a plurality of overlapping areas. Each pixel structure comprises an active element and a pixel electrode. The second insulating layer covers the data line, the common electrode line and the active element and is provided with a plurality of contact openings positioned on the overlapping area. The common electrode is electrically connected to the common electrode line through the contact opening and overlaps an area of the pixel electrode.
Description
Technical field
The present invention relates to a kind of image element array substrates, and particularly relate to a kind of dot structure array base palte for limit suitching type (Fringe Field Switching, a FFS) display panels.
Background technology
Along with the maturation of photoelectric technology and semiconductor fabrication, driven the flourish of flat-panel screens (FlatPanel Display) in recent years.Advantage replaces traditional cathode-ray tube display to liquid crystal display more gradually based on its low voltage operating, radiationless line scattering, lightweight and volume be little etc., and becomes the in recent years main flow of display product.Yet still there is the limited problem in visual angle in liquid crystal display.At present, the technology that can reach the wide viewing angle requirement has comprised stable twisted nematic (twisted nematic, TN) liquid crystal adds view film (wide viewing film), copline suitching type (in-plane switching, IPS) liquid crystal display, limit suitching type (Fringe Field Switching, a FFS) liquid crystal display etc.
In existing fringe field switch type liquid crystal display, be to adopt transparent conductive material to make with the corresponding common electrode of pixel electrode in each dot structure in the image element array substrates.In general common electrode only need be connected to an identical common potential, so the common electrode that is positioned on the whole image element array substrates connects as one.At this moment, for fear of being electrically connected between common electrode and other elements, be provided with the opening corresponding to other element positions on the large-area common electrode.Such large tracts of land and transparent conductive material with a plurality of openings has higher resistance value, and high resistance has bad impact to the transmission of display, and then the display frame bad that causes display to present.Therefore, the design of the image element array substrates of fringe field switch type liquid crystal display still has the space of improvement.
Summary of the invention
The object of the present invention is to provide a kind of image element array substrates, having good aperture opening ratio and being used for a limit suitching type display to provide good display frame.
For reaching above-mentioned purpose, the present invention proposes a kind of image element array substrates, and it comprises a substrate, multi-strip scanning line, one first insulation course, many data lines, many common electrode lines, a plurality of dot structure, one second insulation course and common electrodes.Aforesaid multi-strip scanning line is disposed on the substrate, and the first insulation course covers these sweep traces.Many data lines are disposed on the first insulation course and with these sweep traces and intersect.Many the common electrode line is disposed on the first insulation course, and these common electrode lines and data line alternate configurations.Wherein, common electrode line and sweep trace intersect and define a plurality of overlapping regions.Wherein, a plurality of dot structures are arranged in array, and each dot structure pixel electrode of comprising an active member and being connected in active member.Active member is by a scanning line driving of correspondence and be connected in a corresponding data line.The second insulation course cover data line, common electrode line and active member, the second insulation course has a plurality of contact openings, is positioned on the overlapping region.Common electrode is electrically connected on the common electrode line by contact openings, and overlapping with the area of pixel electrode.
In one embodiment of this invention, above-mentioned common electrode has more a plurality of slits, in the area of these slits corresponding to aforesaid pixel electrode.
In one embodiment of this invention, above-mentioned pixel electrode is between the first insulation course and the second insulation course.
In one embodiment of this invention, above-mentioned image element array substrates more comprises one the 3rd insulation course, covers aforesaid common electrode.Pixel electrode is positioned at the 3rd insulation course top, a plurality ofly runs through that opening is arranged in the 3rd insulation course and the second insulation course is electrically connected on aforesaid active member so that aforesaid pixel electrode runs through opening by these.
In one embodiment of this invention, above-mentioned pixel electrode has a plurality of slits.
In one embodiment of this invention, above-mentioned common electrode has more a plurality of patterns of openings, and these patterns of openings expose aforesaid active member at least.
In one embodiment of this invention, each above-mentioned patterns of openings is in fact between adjacent two common electrode lines and be across wherein data line.
In one embodiment of this invention, the same data line is connected in the dot structure on two adjacent hurdles.
In one embodiment of this invention, adjacent two dot structures are connected in different sweep traces in the same row.
In one embodiment of this invention, be provided with two sweep traces between the adjacent two row dot structures.
In one embodiment of this invention, two sweep traces cross one of them overlapping region with crossing common electrode line wherein.
In one embodiment of this invention, wherein one of them contact openings comprise be overlapped in simultaneously two sweep traces wherein one together with the staggered first of electrode wires and the second portion between two sweep traces.
In one embodiment of this invention, the position of above-mentioned contact openings is between two sweep traces.
In one embodiment of this invention, wherein each pixel electrode and common electrode comprise a transparency electrode, and each common electrode line comprises a metal wire.
Based on above-mentioned, in image element array substrates of the present invention, common electrode line and sweep trace intersect and define a plurality of overlapping regions.Wherein, a plurality of contact openings are positioned at these overlapping regions, and common electrode is electrically connected on the common electrode line by contact openings, this electric connection mode can reduce the resistance of common electrode, and because the position of contact openings is positioned at the overlapping region, can reduce the area of contact openings to the impact of the aperture opening ratio (aperture ratio) of image element array substrates.
For above-mentioned feature and advantage of the present invention can be become apparent, embodiment cited below particularly, and cooperate appended accompanying drawing to be described in detail below.
Description of drawings
Fig. 1 looks synoptic diagram on a kind of part of image element array substrates of the first embodiment of the present invention;
Fig. 2 is that the image element array substrates of Fig. 1 is along the partial cutaway schematic of A-A ' line segment;
Fig. 3 is that synoptic diagram is looked in the part of contact openings between two next-door neighbours' sweep trace;
Fig. 4 is that synoptic diagram is looked in the part of a part between two next-door neighbours' sweep trace of contact openings;
Fig. 5 looks synoptic diagram on a kind of part of image element array substrates of the second embodiment of the present invention;
Fig. 6 is that the image element array substrates of Fig. 5 is along the partial cutaway schematic of B-B ' line segment.
The main element symbol description
100,200: image element array substrates
110,210: substrate
120,120A, 120B, 220: sweep trace
130,230: the first insulation courses
140,240: data line
150,250: the common electrode line
160,260: dot structure
161,261: active member (active component)
162,262: pixel electrode
170,270: the second insulation courses
180,280: common electrode
181,281: patterns of openings
182,262a: slit
290: the three insulation courses
W1, W2, W3, W4: contact openings
W5: run through opening
A1, A2: overlapping region
G: grid
C: channel layer
S: source electrode
D: drain electrode
Embodiment
Fig. 1 looks synoptic diagram on the part according to a kind of image element array substrates of the first embodiment of the present invention.Fig. 2 is that the image element array substrates of Fig. 1 is along the partial cutaway schematic of A-A ' line segment.Please also refer to Fig. 1 and Fig. 2, image element array substrates 100 comprises a substrate 110, multi-strip scanning line 120, one first insulation course 130, many data lines 140 (only showing wherein among the figure), many common electrode lines 150, a plurality of dot structure 160, one second insulation course 170 and common electrodes 180.The material of substrate 110 can be glass, quartz or plastic cement, and substrate 110 mainly is to carry other above-mentioned elements.Aforesaid multi-strip scanning line 120 is disposed on the substrate 110, and the first insulation course 130 covers these sweep traces 120.Many data lines 140 are disposed on the first insulation course 130 and with these sweep traces 120 and intersect.
As illustrating among Fig. 1 and Fig. 2, many common electrode lines 150 are disposed on the first insulation course 130, and these common electrode lines 150 and data line 140 alternate configurations.Wherein, common electrode line 150 intersects with sweep trace 120 and defines a plurality of overlapping region A1.That is to say that in the present embodiment, the bearing of trend of common electrode line 150 can intersect at the bearing of trend of sweep trace 120, and can be parallel in fact the bearing of trend of data line 140.So, common electrode line 150 can define these overlapping regions A1 with sweep trace 120 places interlaced with each other.
A plurality of dot structures 160 in the image element array substrates 100 are arranged in array, and each dot structure 160 pixel electrode 162 of comprising an active member 161 and being connected in active member 161.Active member 161 drives and is connected in a corresponding data line 140 by a sweep trace 120 of correspondence.The second insulation course 170 cover data lines 140, common electrode line 150 and active member 161, the second insulation courses 170 have a plurality of contact openings W1, are positioned on the A1 of overlapping region.Common electrode 180 is electrically connected on common electrode line 150 by contact openings W1, and overlapping with the area of pixel electrode 162.
Please refer to Fig. 1, in the Position Design of contact openings W1, because the position of contact openings W1 is to be positioned at common electrode line 150 to intersect the overlapping region A1 that defines with sweep trace 120, the position of contact openings W1 can be avoided the aperture opening ratio of image element array substrates 100 is impacted, and by common electrode line 150 and common electrode 180 are electrically connected, can reduce the resistance value of common electrode 180, make image element array substrates 100 be used for display good display frame can be provided.
Refer again to Fig. 2, specifically, the active member 161 of present embodiment has comprised grid G, channel layer C, source S and drain D.In the present embodiment, the material of grid G, sweep trace 120, source S, drain D and common electrode line 150 can be metal, metal or its alloys such as aluminium (Al), tungsten (W), molybdenum (Mo), tantalum (Ta), chromium (Cr).Diagrammatic cross-section such as Fig. 2 illustrates, and grid G and sweep trace 120 are to be arranged in same rete, and source S, drain D, data line 140 and 150 on common electrode line are to be co-located in another rete.The grid G that is arranged in same rete can made with the photomask manufacture craft with sweep trace 120, similarly, the source S, drain D, data line 140 and the common electrode line 150 that are arranged in same mould layer also can made with the photomask manufacture craft.Aforesaid the first insulation course 130 is situated between between these two retes, makes the element energy electrical isolation of the tool conduction property of two retes formations.In the present embodiment, the material of the first insulation course 130 can be inorganic material (for example monox, silicon nitride or silicon oxynitride), organic material or is made by the stack layer that comprises multiple insulating material.
From the above, illustrate such as the diagrammatic cross-section of Fig. 2, in the present embodiment, pixel electrode 162 is between the first insulation course 130 and the second insulation course 170, and the direct contact drain D of pixel electrode 162.Therefore, the method for making of the dot structure 160 of present embodiment can be and then to make pixel electrode 162 after making source S and anxious D.So, the second insulation course 170 covers pixel electrodes 162, source S, drain D and channel layer C, and also cover data line 140 and common electrode line 150.So the second insulation course 170 can make the common electrode 180 that is configured on it make electrical isolation with aforesaid other elements.The material of the second insulation course 170 is similar to the first insulation course 130, so repeat no more.
In the present embodiment, the material of pixel electrode 162 and common electrode 180 can be transparent conductive material, for example is indium tin oxide, indium-zinc oxide or aluminium zinc oxide (aluminum zonc oxide, AZO).By contact openings W1, the common electrode 180 that is positioned at different retes can be electrically connected with electrode wires 150 together.Thus, originally by the common electrode 180 of transparent conductive material made the excessive problem of the value of having a resistance, can improve by contacting the common electrode line 150 that is consisted of by metal material.And in Fig. 2, contact openings W1, common electrode line 150 are overlapping with sweep trace 120 at thickness direction.As aforementioned, because the Position Design of each contact openings W1 is to intersect institute at common electrode line 150 and sweep trace 120 to define among a plurality of overlapping region A1, so that common electrode 180 can not produce negative impact to the aperture opening ratio of image element array substrates 100 with the contact openings W1 of electrode wires 150 both connections together, that is can not cause the decline of aperture opening ratio.Thus, when image element array substrates 100 is used for display, can provide better display frame.
Refer again to Fig. 1, common electrode 180 is positioned at pixel electrode 162 and is away from a side of substrate 110 and has more a plurality of slits 182, and wherein these slits 182 are in the area corresponding to pixel electrode 162.That is to say that the area of these slits 182 is overlapped in fact the area of pixel electrode 162.After pixel electrode 162 and common electrode 180 passed into voltage, formed electric field can be used for driving liquid crystal molecule (not illustrating among the figure) between common electrode 180 and the pixel electrode 162.In other words, present embodiment is to describe as an example of the image element array substrates of fringe field switch type (fringe field switching, FFS) liquid crystal display example.In the present embodiment, the pattern form of slit 182 is strip, but the present invention is not as limit.In other embodiments, the pattern form of slit 182 can be warpage (zigzag) shape, wavy or other shapes.
Furthermore, the common electrode 180 of present embodiment also has a plurality of patterns of openings 181, and these patterns of openings 181 expose active member 161 at least.Each patterns of openings 181 is in fact between adjacent two common electrode lines 150, and is across wherein data line 140.Therefore, patterns of openings 181 even can expose these sweep traces 120 at the part section of 150 on adjacent two common electrode lines.In other words, in the present embodiment, patterns of openings 181 is except exposing active member 161, also expose the sweep trace 120 of part, so between common electrode 180 and the sweep trace 120 and the stray capacitance between common electrode 180 and the active member 161 (parasitic capacitance) can effectively be lowered, and then improve signal delay and drive the problems such as load is larger.
In addition, the bearing of trend of sweep trace 120 can be defined as column direction and the bearing of trend of data line 140 can be defined as the hurdle direction.In the present embodiment, same data line 140 is connected in the dot structure 160 on two adjacent hurdles, and adjacent two dot structures 160 are connected in different sweep trace 120 in the same row.Therefore, present embodiment is in fact to describe as an example of the image element array substrates 100 of half source drive (half source driving, HSD) framework example.Under the framework of half source drive, because the dot structure 160 on two adjacent hurdles is to share same data line 140, so data line 140 quantity in the image element array substrates 100 are reduced by half, has cost-effective advantage.
In addition, under the HSD framework, be provided with two sweep traces 120 between the adjacent two row dot structures 160.Zone between these two sweep traces 120 of next-door neighbour is originally in order to display frame, hereat the position of aforesaid contact openings W1 can at least a portion between these two sweep traces 120.In other words, the position of contact openings W1 is not limited to illustrate among Fig. 1.
Because the area between sweep trace 120 place areas and two next-door neighbours' the sweep trace 120 is all non-in order to carry out the zone of display frame, contact openings W1 is arranged at these positions all can reduces contact openings W1 to the impact of the aperture opening ratio of image element array substrates 100.
In the present embodiment, this two sweep traces 120 of next-door neighbour intersect with common electrode line 150 wherein and cross one of them overlapping region A1.The scope of overlapping region A1 can be defined as two sweep traces 120 and cross next zone with the border of electrode wires 150 together with zone or two sweep traces 120 that are defined as the next-door neighbour that electrode wires 150 overlapping areas consist of together, and contact openings W1 can be configured in the optional position of these overlapping regions A1.
For example, Fig. 3 is that synoptic diagram is looked in the part of contact openings between two next-door neighbours' sweep trace.Illustrate such as Fig. 3, the position of contact openings W2 can be to be situated between between two next-door neighbours' sweep trace 120.Two contact openings W2 that draw among Fig. 3 are situated between between two next-door neighbours' sweep trace 120 and are overlapped in common electrode line 150.Certainly, the position of contact openings W2 is not as limit.
Fig. 4 is that synoptic diagram is looked in the part of a part between two next-door neighbours' sweep trace of contact openings.As illustrating among Fig. 4, the part of contact openings W3 is between two next-door neighbours' sweep trace 120A and 120B, and another part is to be overlapped in sweep trace 120A.The position of contact openings W3 is not as limit, and contact openings W3 also can be a part of between two next-door neighbours' sweep trace 120A and 120B, and another part is to be overlapped in sweep trace 120B.As long as contact openings W3 is positioned at overlapping region A1, and be overlapped in common electrode line 150, then the part of contact openings W3 can be to be overlapped in sweep trace 120A or to be overlapped in sweep trace 120B.Although two contact openings W3 among Fig. 4 are that some is overlapped in sweep trace 120A, the present invention is not as limit.For instance, can be that one of them the part of two contact openings W3 is overlapped in 120A, another a part then is overlapped in 120B, or the part of two contact openings W3 all is to be overlapped in sweep trace 120B.
Fig. 5 looks synoptic diagram on the part according to a kind of image element array substrates of the second embodiment of the present invention.Fig. 6 is that the image element array substrates of Fig. 5 is along the partial cutaway schematic of B-B ' line segment.Please also refer to Fig. 5 and Fig. 6.Image element array substrates 200 comprises a substrate 210, multi-strip scanning line 220, one first insulation course 230, many data lines 240 (only showing wherein among the figure), many common electrode lines 250, a plurality of dot structure 260, one second insulation course 270 and common electrodes 280.Aforesaid multi-strip scanning line 220 is disposed on the substrate 210, and the first insulation course 230 covers these sweep traces 220.Many data lines 240 are disposed on the first insulation course 230 and with these sweep traces 220 and intersect.
Many common electrode line 250 is disposed on the first insulation course 230, and these common electrode lines 250 and data line 240 alternate configurations.Wherein, common electrode line 250 intersects with sweep trace 220 and defines a plurality of overlapping region A2.A plurality of dot structures 260 are arranged in array, and each dot structure 260 pixel electrode 262 of comprising an active member 261 and being connected in active member 261.Active member 261 drives and is connected in a corresponding data line 240 by a sweep trace 220 of correspondence.The second insulation course 270 cover data lines 240, common electrode line 250 and active member 261, the second insulation courses 270 have a plurality of contact openings W4, are positioned on the A2 of overlapping region.Common electrode 280 is electrically connected on common electrode line 250 by contact openings W4, and overlapping with the area of pixel electrode 262.
From the above, the second embodiment is similar in fact to the first embodiment, and both difference mainly is the laminated layer sequence of each rete.Please refer to Fig. 6, in the present embodiment, image element array substrates 200 comprises that more one the 3rd insulation course, 290, the three insulation courses 290 cover common electrode 280, and pixel electrode 262 is positioned at the 3rd insulation course 290 tops.A plurality of opening W5 that run through are arranged in the 3rd insulation course 290 and the second insulation course 270, so that pixel electrode 262 is electrically connected on active member 261 by running through opening W5.Sectional view by Fig. 2 and Fig. 6 comes comparison, the pixel electrode 262 of present embodiment is the top (that is pixel electrode 262 is located farther from substrate 210 compared to common electrode 280) that is positioned at common electrode 280, and the pixel electrode 162 of the first embodiment then is the below (that is common electrode 180 is located farther from substrate 110 compared to pixel electrode 162) that is positioned at common electrode 180.Therefore, in the present embodiment, pixel electrode 262 has a plurality of slit 262a, at pixel electrode 262 with after common electrode 280 passes into corresponding voltage, the electric field that produces between pixel electrode 262 and the common electrode 280 can be used for driving liquid crystal molecule (not illustrating among the figure), this part is identical with the first embodiment, so repeat no more.In addition, in the present embodiment, the 3rd insulation course 290 is configured between common electrode 280 and the pixel electrode 262 so that both are done electrical isolation.
At this, identical with the first embodiment is that active member 261 has comprised grid G, channel layer C, source S and drain D.In the present embodiment, grid G and sweep trace 220 are to be arranged in same rete, and source S, drain D, data line 240 and 250 on common electrode line are to be co-located in another rete.In order to make pixel electrode 262 can be electrically connected drain D, run through opening W5 and run through pixel electrode 262 and with the second insulation course 270 and the 3rd insulation course 290 between the drain D both can be contacted.The material of the 3rd insulation course 290 can be inorganic material (for example monox, silicon nitride or silicon oxynitride), organic material or is made by the stack layer that comprises insulating material and other insulating material.
In a second embodiment, the material of each element is identical with the first embodiment with function, take pixel electrode 262, common electrode 280 together with electrode wires 250 as example, pixel electrode 262 and common electrode 280 can be transparent conductive materials, and common electrode line 250 can be metal.In the present embodiment, the contact openings W4 that utilization is positioned at overlapping region A2 makes common electrode 280 do electrical connection with electrode wires 250 together, can reach the effect of the resistance reduction that makes common electrode 280, its principle is similar to the first embodiment, so no longer given unnecessary details at this.Certainly, contact openings W4 is positioned at common electrode line 250 and the overlapping region A2 that sweep trace 220 is intersected, and has equally and reduces contact openings W4 to the effect of aperture opening ratio impact.
In sum, contact openings is configured in the common electrode line in image element array substrates utilization of the present invention and the crossing institute of sweep trace defines in a plurality of overlapping regions, to reduce contact openings to the impact of the aperture opening ratio of image element array substrates.In the image element array substrates, common electrode is to be electrically connected on the common electrode line by these contact openings, because the material of common electrode line can be metal material, so can reduce the resistance of common electrode, avoids affecting display quality.In addition, the stacked arrangement of each rete has multiple design in the image element array substrates, the deviser can be disposed at pixel electrode on the common electrode, or common electrode is disposed on the pixel electrode, so image element array substrates of the present invention has more good design flexibility.
Although disclosed the present invention in conjunction with above embodiment; yet it is not to limit the present invention; be familiar with this operator in the technical field under any; without departing from the spirit and scope of the present invention; can do a little change and retouching, thus protection scope of the present invention should with enclose claim was defined is as the criterion.
Claims (14)
1. image element array substrates comprises:
Substrate;
The multi-strip scanning line is disposed on this substrate;
The first insulation course covers those sweep traces;
Many data lines are disposed on this first insulation course and with those sweep traces and intersect;
Many common electrode lines are disposed on this first insulation course, those common electrode lines and those data line alternate configurations, and wherein those common electrode lines and those sweep traces intersect and define a plurality of overlapping regions;
A plurality of dot structures are arranged in array, this dot structure pixel electrode of comprising active member and being connected in this active member respectively, and this active member is by a scanning line driving of correspondence and be connected in a corresponding data line;
The second insulation course covers those data lines, those common electrode lines and those active members, and this second insulation course has a plurality of contact openings, is positioned on those overlapping regions; And
Common electrode is electrically connected on those common electrode lines by those contact openings, and overlapping with the area of those pixel electrodes.
2. image element array substrates as claimed in claim 1, wherein this common electrode has a plurality of slits, in the area of those slits corresponding to those pixel electrodes.
3. image element array substrates as claimed in claim 2, wherein those pixel electrodes are between this first insulation course and this second insulation course.
4. image element array substrates as claimed in claim 1, also comprise the 3rd insulation course, cover this common electrode, those pixel electrodes are positioned at the 3rd insulation course top, a plurality ofly run through that opening is arranged in the 3rd insulation course and this second insulation course is electrically connected on those active members so that those pixel electrodes run through opening by those.
5. image element array substrates as claimed in claim 4, wherein those pixel electrodes have a plurality of slits.
6. image element array substrates as claimed in claim 1, wherein this common electrode also has a plurality of patterns of openings, and those patterns of openings expose those active members at least.
7. image element array substrates as claimed in claim 6, wherein respectively this patterns of openings in fact between adjacent two common electrode lines and be across wherein data line.
8. image element array substrates as claimed in claim 1, wherein the same data line is connected in those dot structures on two adjacent hurdles.
9. image element array substrates as claimed in claim 1, wherein adjacent two dot structures are connected in different sweep traces in the same row.
10. image element array substrates as claimed in claim 1 wherein is provided with two sweep traces between the adjacent two row dot structures.
11. image element array substrates as claimed in claim 10, wherein these two sweep traces and crossing common electrode line wherein cross these a plurality of overlapping regions at least one of them.
12. image element array substrates as claimed in claim 11, wherein one of them contact openings comprises and is overlapped in simultaneously a wherein staggered first and the second portion between these two sweep traces of and this common electrode line of these two sweep traces.
13. image element array substrates as claimed in claim 10, wherein the position of those contact openings is between these two sweep traces.
14. image element array substrates as claimed in claim 1, wherein respectively this pixel electrode and this common electrode comprise a transparency electrode, and respectively this common electrode line comprises a metal wire.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101137151A TWI468826B (en) | 2012-10-08 | 2012-10-08 | Pixel array substrate |
| TW101137151 | 2012-10-08 |
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| CN102967977A true CN102967977A (en) | 2013-03-13 |
| CN102967977B CN102967977B (en) | 2015-05-06 |
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| CN201210529900.6A Active CN102967977B (en) | 2012-10-08 | 2012-12-10 | Pixel array substrate |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN103941498A (en) * | 2013-11-15 | 2014-07-23 | 上海中航光电子有限公司 | TFT array substrate, display panel and display device |
| US9711543B2 (en) | 2013-11-29 | 2017-07-18 | Lg Display Co., Ltd. | Liquid crystal display and method for manufacturing the same |
| CN104678664A (en) * | 2013-11-29 | 2015-06-03 | 乐金显示有限公司 | Liquid crystal display and method for manufacturing the same |
| CN105319790A (en) * | 2014-06-05 | 2016-02-10 | 株式会社日本显示器 | Display device |
| CN105319790B (en) * | 2014-06-05 | 2018-09-18 | 株式会社日本显示器 | Display device |
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| CN105739192A (en) * | 2014-12-30 | 2016-07-06 | 乐金显示有限公司 | Touch type liquid crystal display device |
| CN105739192B (en) * | 2014-12-30 | 2019-01-29 | 乐金显示有限公司 | Touch type liquid crystal display device |
| WO2016206452A1 (en) * | 2015-06-26 | 2016-12-29 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof, display panel, and display device |
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| US10564490B2 (en) | 2017-08-29 | 2020-02-18 | Boe Technology Group Co., Ltd. | Array substrate, method for fabricating the same, and display device |
| CN107450239A (en) * | 2017-08-29 | 2017-12-08 | 京东方科技集团股份有限公司 | A kind of array base palte and preparation method thereof, display device |
| CN107807483A (en) * | 2017-09-25 | 2018-03-16 | 友达光电股份有限公司 | Pixel structure |
| CN107807483B (en) * | 2017-09-25 | 2020-07-31 | 友达光电股份有限公司 | Pixel structure |
| US10761382B2 (en) | 2017-09-25 | 2020-09-01 | Au Optronics Corporation | Pixel structure |
| CN110568962A (en) * | 2019-02-23 | 2019-12-13 | 友达光电股份有限公司 | Pixel array substrate |
| CN110568962B (en) * | 2019-02-23 | 2022-12-13 | 友达光电股份有限公司 | Pixel array substrate |
Also Published As
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|---|---|
| TW201415146A (en) | 2014-04-16 |
| CN102967977B (en) | 2015-05-06 |
| TWI468826B (en) | 2015-01-11 |
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