CN102946228B - Terahertz power synthesized double frequency circuit based on Y-shaped structure - Google Patents
Terahertz power synthesized double frequency circuit based on Y-shaped structure Download PDFInfo
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- CN102946228B CN102946228B CN201210467894.6A CN201210467894A CN102946228B CN 102946228 B CN102946228 B CN 102946228B CN 201210467894 A CN201210467894 A CN 201210467894A CN 102946228 B CN102946228 B CN 102946228B
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Abstract
The invention discloses a terahertz power synthesized double frequency circuit based on a Y-shaped structure. The circuit comprises a metal upper base and a metal lower base; an input waveguide structure, two groups of synthetic channels, an output waveguide structure and two groups of direct current bias circuits are arranged in the cavity which is formed by the metal upper base and the metal lower base; both the input waveguide structure and the output waveguide structure are of Y shapes; the two groups of synthetic channels and the direct current bias circuits are respectively arranged along the centerline mirrors of the Y shapes of the input waveguide structure and the output waveguide structure; two ends of the input waveguide structure Y shape are respectively connected with the input end corresponding to the synthetic channel; two ends of the output waveguide structure Y shape are respectively connected with the output end corresponding to the synthetic channel; film chips are respectively hung in the two groups of synthetic channels; a chip capacitors are arranged on the direct current bias circuits; and the chip capacitors are connected with the film chips. The circuit provided by the invention has the characteristics of compact structure and high integration level; and based on the micro-nano technology, the circuit is convenient to integrate and the structure of the circuit is compact.
Description
Technical field
What the present invention relates to is a kind of Terahertz frequency multiplier circuit, in particular a kind of Terahertz power combing two frequency multiplier circuit based on Y-shaped structure.
Background technology
It is 30 μm ~ 3mm that THz wave (i.e. Terahertz, writes a Chinese character in simplified form THz) typically refers to frequency at 0.1 THz ~ 10 THz(wavelength) electromagnetic wave in scope.1THz(10
12hz) corresponding wave number is 33.3cm
-1, energy is 4.1meV, and wavelength is 300 μm.From frequency spectrum, THz wave in electromagnetic spectrum between microwave and infrared between, be in the region of electronics to photonic propulsion transition, be in the transition region of macroscopic classical theories to Bcs Theory.In person in electronics, THz wave is called as submillimeter wave; At optical field, it is otherwise known as far ir ray; From energy, the energy of terahertz wave band is between electronics and photon.
Traditional electronics method and optical means are all difficult to produce high-quality THz wave, along with the development of photoelectron technology and semiconductor technology, use ultrafast laser bombardment nonlinear crystal or photoconductive dipole can realize the THz wave of milliwatt level power stage and frequency-adjustable, this is just for research provides stable and effective means; Utilize electrovacuum backward wave tube (BWO) by phase-locked, also can realize the THz wave of 1.2THz frequency following milliwatt level power stage and frequency-adjustable; The additional phase-locked mechanism of quanta cascade (QCL), can realize the THz wave of 2THz frequency above milliwatt level power stage and frequency-adjustable.But all there is system complex, integrated level difference and the problem such as to involve great expense in these technology.Therefore there is the important technology that THz wave power frequency multiplication that is compact and higher-wattage output advantage becomes THz wave technical research.In Terahertz double-frequency theory, larger power output be obtained, generally need to increase input power, but shg efficiency is relevant with input power, too high input power easily causes device saturated, causes shg efficiency greatly to reduce, even cause potential barrier reverse breakdown, device suffers damage.For these problems, be only improved the bearing capacity of device to large input power, do not reduce shg efficiency η simultaneously, just can realize relatively high power and export.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, provide a kind of Terahertz power combing two frequency multiplier circuit based on Y-shaped structure, while improving device bearing capacity, shg efficiency η can not be reduced.
The present invention is achieved by the following technical solutions, the present invention includes metal top base and metal bottom base, in the cavity that metal top base and metal bottom base are formed, input waveguide structure, two is set and is combined into passage, output waveguide structure and two groups of DC bias circuits; Described input waveguide structure and output waveguide structure are Y shape, two are combined into passage and DC bias circuit is arranged along the center line mirror image of input waveguide structure and output waveguide structure Y shape respectively, the two ends of input waveguide structure Y shape connect the input of corresponding synthesis passage respectively, the two ends of output waveguide structure Y shape connect the output of corresponding synthesis passage respectively, two are combined into difference suspended membrane chip in passage, DC bias circuit arranges chip capacity, and chip capacity is connected with thin film chip.
Described thin film chip comprise chip body and be arranged at respectively the first beam lead on chip body, the second beam lead, the 3rd beam lead, Terahertz Schottky tube to, input coupling unit, export coupling unit and low pass filter, the head end of described chip body and end are positioned in corresponding synthesis passage respectively by the first beam lead and the second beam lead, the right two ends of Terahertz Schottky tube are connected on metal bottom base by the first beam lead to form direct current and the loop of rf, input coupling unit is arranged at the right centre of Terahertz Schottky tube, export coupling unit to be connected with input coupling unit, low pass filter is connected with output coupling unit, low pass filter is connected to carry out DC feedback with chip capacity by the 3rd beam lead, input coupling unit is connected with input waveguide structure, export coupling unit to be connected with output waveguide structure.
As one of optimal way of the present invention, described thin film chip is gallium arsenide film, and the thickness of thin film chip is 10 ~ 15 μm.
The right topological structure of described Terahertz Schottky tube is anti-series structure, is beneficial to and realizes clutter recognition.
For realizing the connection with outside miscellaneous part, the both sides of described metal top base and metal bottom base arrange mounting flange respectively.
Described metal top base is connected by alignment pin with metal bottom base, realizes stationary positioned by alignment pin.
Described metal top base and metal bottom base are respectively equipped with DC feedback SMA(Small A Type) connector, described DC feedback SMA connector is connected with DC bias circuit.
The manufacture craft of thin film chip and parts thereof selects electron beam lithography (EBL, electronic beam lithography), inductance coupling high reactive ion etching (ICP Etching, inductively coupled plasma reactive ion etching), molecular beam epitaxy (MBE, Molecular beam epitaxy), any one in plasma enhanced chemical vapor deposition (PECVD, Plasma Enhanced Chemical Vapor Deposition).
Thin film chip circuit in two synthesis passages of the present invention is completely the same, completes the excitation from input merit sub-signal separately, and completes two paths of signals synthesis at output side Y-shaped structure.Thin film chip is fixed in synthesis passage via beam lead, and provides DC loop and the loop of rf by it, and DC bias circuit side provides DC channel by beam lead, through chip capacity direct current supply.
The present invention has the following advantages compared to existing technology: the present invention has compact conformation, feature that integrated level is high: based on micro & nano technology, be convenient to integrated, compact conformation;
The present invention has the good feature of port performance: when carrying out the design of film frequency multiplier circuit, complete Y-shaped structure Broadband Matching, consider collaborative design, obviously reduce port standing wave, improve port performance, the Y-shaped structure of input/output section plays input homophase merit respectively and divides and export the effect with being combined to, and is aided with matched design, easily realizes Broadband Matching; Port reflects is less, and standing wave is functional, obtains good synthesis performance while not losing shg efficiency; This circuit structure is simple, and be easy to machining and assembling test, rate of finished products is high; Be easy to expansion, binary system multichannel synthesis from now on (2 can be realized
nroad, n>=1) and linear array circuit structure;
The basic multiplier unit of the present invention, the thin film chip of two groups of frequency multiplication elementary cells, completely the same, its technique adopted is micro-nano Integrated-manufacturing Techniques, has cost low, and consistency is good, is convenient to the feature of scale manufacturing.
Accompanying drawing explanation
Fig. 1 is schematic perspective view of the present invention;
Fig. 2 is the vertical view of metal bottom base;
Fig. 3 is the partial schematic diagram of synthesis passage;
Fig. 4 is the structural representation of thin film chip;
Fig. 5 is input power is power output result under 120mW condition;
Fig. 6 input power is shg efficiency result under 120mW condition.
Embodiment
Elaborate to embodiments of the invention below, the present embodiment is implemented under premised on technical solution of the present invention, give detailed execution mode and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
As shown in Figure 1, Figure 2 and Figure 3, the present embodiment comprises metal top base 1 and metal bottom base 2, arranges input waveguide structure 3, two and be combined into passage 4, output waveguide structure 5 and two groups of DC bias circuits 6 in the cavity that metal top base 1 and metal bottom base 2 are formed; Described input waveguide structure 3 and output waveguide structure 5 are Y shape, two are combined into passage 4 and DC bias circuit 6 is arranged along the center line mirror image of input waveguide structure 3 and output waveguide structure 5Y shape respectively, the two ends of input waveguide structure 3Y shape connect the input of corresponding synthesis passage 4 respectively, the two ends of output waveguide structure 5Y shape connect the output of corresponding synthesis passage 4 respectively, two are combined into difference suspended membrane chip 7 in passage 4, DC bias circuit 6 is arranged chip capacity 61, chip capacity 61 is connected with thin film chip 7.For realizing the connection with outside miscellaneous part, the both sides of described metal top base 1 and metal bottom base 2 arrange mounting flange 8 respectively; Described metal top base 1 is connected by alignment pin 9 with metal bottom base 2, realizes stationary positioned by alignment pin 9; Described metal top base 1 and metal bottom base 2 are respectively equipped with DC feedback SMA connector 10, and described DC feedback SMA connector 10 is connected with DC bias circuit 6.
Synthesize passage 4 in the present embodiment, input waveguide structure 3, output waveguide structure 5, DC bias circuit 6 on metal, bottom base obtain by the mode of accurate digital control milling (CNC Milling, Computerized Numerical Control Milling).Metal top base 1 for copper becomes, can select aluminium in other embodiments with metal bottom base 2, and first do accurate digital control milling by precision machine tool, then surface gold-plating obtains.
As shown in Figure 4, described thin film chip 7 comprise chip body 71 and be arranged at respectively the first beam lead 72, second beam lead 73 on chip body 71, the 3rd beam lead 74, Terahertz Schottky tube to 75, input coupling unit 76, export coupling unit 77 and low pass filter 78, the head end of described chip body 71 and end are positioned in corresponding synthesis passage 4 respectively by the first beam lead 72 and the second beam lead 73, Terahertz Schottky tube is connected on metal bottom base 2 to form direct current and the loop of rf by the first beam lead 72 two ends of 75, input coupling unit 76 be arranged at Terahertz Schottky tube to 75 centre, export coupling unit 77 to be connected with input coupling unit 76, low pass filter 78 is connected with output coupling unit 77, low pass filter 78 is connected to carry out DC feedback with chip capacity 61 by the 3rd beam lead 74, input coupling unit 76 is connected with input waveguide structure 3, export coupling unit 77 to be connected with output waveguide structure 5.Terahertz Schottky tube is anti-series structure to the topological structure of 75, is beneficial to and realizes clutter recognition, effectively suppresses higher modes to excite and transmission.
In the present embodiment, the manufacture craft of thin film chip 7 and parts thereof selects electron beam lithography to make.The thin film chip 7 of the present embodiment is gallium arsenide film, and the area of thin film chip 7 is 240um*1350 μm, and thickness is 12 μm.Total overall dimension of metal top base 1 and metal bottom base 2 is 28mm*40mm*25mm.
Fig. 5 is input power is power output result under 120mW condition, and in the visible 20GHz bandwidth range of curve, power output is higher than 24mW.Fig. 6 is input power is shg efficiency result under 120mW condition, from in the visible 20GHz bandwidth range of curve, shg efficiency is 18%, and result shows, 360GHz to 380GHz frequency range keeps quite high shg efficiency and very superior port identity, and frequency doubling property is excellent.
Claims (7)
1. Terahertz power combing two frequency multiplier circuit based on Y-shaped structure, it is characterized in that, comprise metal top base (1) and metal bottom base (2), input waveguide structure (3), two is set in the cavity that metal top base (1) and metal bottom base (2) are formed and is combined into passage (4), output waveguide structure (5) and two groups of DC bias circuits (6), described input waveguide structure (3) and output waveguide structure (5) are Y shape, two are combined into passage (4) and DC bias circuit (6) is arranged along the center line mirror image of input waveguide structure (3) and output waveguide structure (5) Y shape respectively, the two ends of input waveguide structure (3) Y shape connect the input of corresponding synthesis passage (4) respectively, the two ends of output waveguide structure (5) Y shape connect the output of corresponding synthesis passage (4) respectively, two are combined into difference suspended membrane chip (7) in passage (4), DC bias circuit (6) is arranged chip capacity (61), chip capacity (61) is connected with thin film chip (7).
2. Terahertz power combing two frequency multiplier circuit based on Y-shaped structure according to claim 1, is characterized in that: described thin film chip (7) comprise chip body (71) and be arranged at respectively the first beam lead (72) on chip body (71), the second beam lead (73), the 3rd beam lead (74), Terahertz Schottky tube to (75), input coupling unit (76), export coupling unit (77) and low pass filter (78), the head end of described chip body (71) and end are positioned in corresponding synthesis passage (4) respectively by the first beam lead (72) and the second beam lead (73), Terahertz Schottky tube is connected on metal bottom base (2) to form direct current and the loop of rf by the first beam lead (72) the two ends of (75), input coupling unit (76) is arranged at the centre of Terahertz Schottky tube to (75), export coupling unit (77) to be connected with input coupling unit (76), low pass filter (78) is connected with output coupling unit (77), low pass filter (78) is connected to carry out DC feedback with chip capacity (61) by the 3rd beam lead (74), input coupling unit (76) is connected with input waveguide structure (3), export coupling unit (77) to be connected with output waveguide structure (5).
3. Terahertz power combing two frequency multiplier circuit based on Y-shaped structure according to claim 2, is characterized in that: described thin film chip (7) is gallium arsenide film, and the thickness of thin film chip (7) is 10 ~ 15 μm.
4. Terahertz power combing two frequency multiplier circuit based on Y-shaped structure according to claim 2, is characterized in that: described Terahertz Schottky tube is anti-series structure to the topological structure of (75).
5. Terahertz power combing two frequency multiplier circuit based on Y-shaped structure according to claim 1, is characterized in that: the both sides of described metal top base (1) and metal bottom base (2) arrange mounting flange (8) respectively.
6. Terahertz power combing two frequency multiplier circuit based on Y-shaped structure according to claim 1, is characterized in that: described metal top base (1) is connected by alignment pin (9) with metal bottom base (2).
7. Terahertz power combing two frequency multiplier circuit based on Y-shaped structure according to claim 1, it is characterized in that: described metal top base (1) and metal bottom base (2) are respectively equipped with DC feedback SMA connector (10), described DC feedback SMA connector (10) is connected with DC bias circuit (6).
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| CN201210467894.6A CN102946228B (en) | 2012-11-19 | 2012-11-19 | Terahertz power synthesized double frequency circuit based on Y-shaped structure |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104702217B (en) * | 2015-03-31 | 2017-10-31 | 中国科学院空间科学与应用研究中心 | A kind of Terahertz frequency multiplier of embedded biasing circuit |
| CN105024647B (en) * | 2015-07-24 | 2018-10-23 | 东南大学 | A kind of all band Terahertz three times frequency module |
| CN105007045B (en) * | 2015-07-24 | 2018-05-04 | 东南大学 | A kind of Terahertz fundamental wave mixing module |
| CN105207623B (en) * | 2015-09-29 | 2017-12-22 | 西安空间无线电技术研究所 | A kind of W-waveband high power is integrated to be combined to frequency multiplication source |
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| CN1377099A (en) * | 2001-03-22 | 2002-10-30 | 深圳市利原宏实业发展有限公司 | Solid-state power synthesizer in waveguide |
| US7215220B1 (en) * | 2004-08-23 | 2007-05-08 | Cap Wireless, Inc. | Broadband power combining device using antipodal finline structure |
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| CN1377099A (en) * | 2001-03-22 | 2002-10-30 | 深圳市利原宏实业发展有限公司 | Solid-state power synthesizer in waveguide |
| US7215220B1 (en) * | 2004-08-23 | 2007-05-08 | Cap Wireless, Inc. | Broadband power combining device using antipodal finline structure |
| CN101699652A (en) * | 2009-10-28 | 2010-04-28 | 华南理工大学 | Symmetrical coupling wave-guided wave power synthesis amplifier |
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