CN102945919B - Method for improving light spots of high-power light-emitting diode (LED) - Google Patents
Method for improving light spots of high-power light-emitting diode (LED) Download PDFInfo
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- CN102945919B CN102945919B CN201210403009.8A CN201210403009A CN102945919B CN 102945919 B CN102945919 B CN 102945919B CN 201210403009 A CN201210403009 A CN 201210403009A CN 102945919 B CN102945919 B CN 102945919B
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- transparent grain
- led
- light
- filling glue
- weight ratio
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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Abstract
The invention relates to a light-emitting diode (LED), in particular to an LED packaging structure capable of improving the problem of light spots of a high-power LED. The invention relates to a method for improving the problem of light spots of the high-power LED. Transparent particles with polyhedral structures are distributed in filling glue of the LED packaging structure uniformly and are 2 to 10 percent in weight ratio of the filling glue. The transparent particles are mixed particles of polymethyl methacrylate (PMMA) transparent particles shaped like concave lenses, SiO2 transparent particles shaped like objects with three to eight-faces, and poly carbonate (PC) transparent particles shaped like objects with more than eight faces, wherein the SiO2 transparent particles are 0.6 to 3.7 percent in weight ratio of the filling glue; the PC transparent particles are 0.2 to 2.3 percent in weight ratio of the filling glue; and the PMMA transparent particles are 1.2 to 6.3 percent in weight ratio of the filling glue. The method is used for improving the problem of light spots of the high-power LED.
Description
Technical field
The present invention relates to LED(Light-Emitting Diode, light-emitting diode), particularly relate to a kind of LED encapsulation structure improving great power LED hot spot.
Background technology
The method utilizing fluorescent material to change realizes LED, and to send white light be a kind of method studying the hottest at most at present.Send in white light process realizing LED, fluorescent material (fluorescent material) covers the encapsulating structure of LED and technology is then the key core that white light LEDs is made.
Such as, for the power type white light LED for lighting field, the uniform spatial distribution of its colour temperature and colourity is the important indicator of properties of product.The colour temperature difference that human eye can be differentiated is 50-100K, and the uniformity of current common LED device colourity is still undesirable, and the angle colour temperature difference of even single LEDs can arrive 800K greatly.Visible, for white light LEDs, the uniformity research of ejecting white light hot spot and improvement are important topics.
The existing method to improving hot spot, substantially be set about from fluorescent glue process aspect, the such as applying date is 2011.12.28, application number is the patent of invention of 201110445591.X, disclose a kind of LED light spot ameliorative way, the method comprising the steps of 1: select materials: selecting cup dark is 0.46 ± 0.02mm, rim of a cup angle is the support of 135 degree, and selects the fluorescent material of particle diameter 17-19um and particle diameter 4-5um mutually to arrange in pairs or groups; Step 2: some glue: become hemispherical dome structure with yellow fluorescent glue point, become approximately parallel two faces with lens.Said method is arranged in pairs or groups mutually by selecting the fluorescent material of particle diameter 17-19um and particle diameter 4-5um, effectively improves luminous flux, and yellow fluorescent glue point is become hemispherical dome structure, increase light-emitting zone.The improvement of above-mentioned patent to hot spot has certain effect, but cannot eliminate the edge macula lutea phenomenon of LED, because edge macula lutea phenomenon is because the edge blue light outgoing of LED is few, and the gold-tinted outgoing that fluorescent material sends causes more.
Also have in addition and add spread powder to alleviate the problem of hot spot in fluorescent glue, but cannot pass through spread powder due to light, there is diffuse reflection on the surface of spread powder in light, then can reduce luminous flux.Therefore, a number of patent application is the patent of invention of 200910251589.1, discloses a kind of LED fluorescent glue, and this invention is the combination by spread powder and whitening powder, promotes diffusivity and is beneficial to the refraction of body of light.Wherein, spread powder is less than the meltable TO powder of 5 microns, this spread powder is fully mixed in silica gel to promote diffusivity, reaches hot spot diffusion, promote its consistency.Whitening powder is by rhombogen SiO
2with Al
2o
3in conjunction with what formed, whitening powder can form the solid barrier of one side in mixture, so that the refraction of body of light.In this patent, need spread powder and whitening powder to be combined the effect that just can reach and alleviate hot spot.And SiO
2refractive index be about 1.55, through its refraction after again through Al
2o
3the metal surface reflection of pulvis (metal ball shaped particle), makes light be spread, therefore needs SiO
2and Al
2o
3collocation uses; In addition, Al
2o
3be subject to dust pollution not easily store, need namely to get i.e. use, therefore complex process, preparation not easily.
Summary of the invention
Technical problem to be solved by this invention is, provides a kind of method improving great power LED hot spot, by the cooperation of multiple hybrid particles, replaces SiO
2and Al
2o
3collocation uses, and under the prerequisite ensureing luminous flux, improves the problem of great power LED hot spot, solves edge macula lutea problem, and Simplified flowsheet, makes preparation become simple simultaneously.
In order to solve the problems of the technologies described above, the technical solution adopted in the present invention is, improve a method for great power LED hot spot, be uniformly distributed the transparent grain of polyhedral structure in the layer of silica gel in LED encapsulation structure and/or fluorescent adhesive layer, described transparent grain accounts for the 2%-10% weight ratio of filling glue.Described transparent grain is SiO
2transparent grain, PC(polycarbonate) transparent grain and PMMA(polymethyl methacrylate) hybrid particles of transparent grain; Described SiO
2transparent grain accounts for the 0.6%-3.7% weight ratio of filling glue, and described PC transparent grain accounts for the 0.2%-2.3% weight ratio of filling glue, and described PMMA transparent grain accounts for the 1.2%-6.3% weight ratio of filling glue.Wherein, PMMA transparent grain is concave lens shape (the thick shape in intermediate thin both sides), SiO
2transparent grain is 3 to 8 shapes, and PC transparent grain is greater than polyhedron-shaped (such as six prisms, seven pyramids, seven prisms, eight prisms etc.) of 8.
Wherein LED encapsulation structure comprises LED chip, support, fluorescent adhesive layer, optical lens, and layer of silica gel.Wherein, layer of silica gel and/or fluorescent adhesive layer have been uniformly distributed the transparent grain of polyhedral structure.Support is provided with the pedestal of the cup of placing LED chip, the positive conductive feet of being drawn by wire by the both positive and negative polarity of LED chip and negative conductive feet and coated above-mentioned positive conductive feet and negative conductive feet; Described LED chip is positioned in the cup of described support, and described fluorescent adhesive layer covers described LED chip completely, and described layer of silica gel is between fluorescent adhesive layer and optical lens.Scattered the transparent grain of polyhedral structure by the filling glue in original LED encapsulation structure, improve great power LED hot spot phenomenon.
Wherein, the refractive index of PMMA transparent grain is 1.49, SiO
2transparent grain refractive index is the refractive index of 1.55, PC transparent grain is 1.5872, and according to refractive index from big to small, polyhedral surface of its particle is also more.And the filling glue refractive index (1.4) of the refractive index of above-mentioned material and layer of silica gel and fluorescent glue refractive index (1.5) close, the coefficient of expansion is close, and the combination of three hybrid particles, and light is mutually reflected between different refractivity particle, and its diffusivity is better.Concrete, light is through the PMMA transparent grain of the less concave lens shape of refractive index, and by optical principle, light refraction is limited in scope; Light is through the SiO of larger 3 to 8 shapes of refractive index
2during transparent grain, light refraction expanded range; Light is through the larger polyhedron-shaped PC transparent grain being greater than 8 of refractive index, and light refraction more disperses, but some light reflects downwards, and causes certain light losing.And by the combination of above-mentioned three kinds of transparent grains, make uniform light diffusion effect best, and light losing is minimum.
Certainly, this transparent grain can also selective refraction rate be about 1.5 other particles.By being scattered with the transparent grain of polyhedral structure in above-mentioned layer of silica gel and/or fluorescent adhesive layer, the course of light can be changed, make light dispersed.
As further technical scheme, the maximum gauge of described transparent grain is 100-500um, and above-mentioned transparent grain can be realized by laser cutting, and the method for also available hydrogen fluoric acid corrosion realizes.Experiment proves, selects the transparent grain of this diameter range, makes the diffusion of light the most even.
As further technical scheme, the exiting surface of described optical glass is coarse.This coarse exiting surface specifically several hemispherical projections is formed.Like this, through this matsurface, the shooting angle of light is larger, reduces the total reflection of light.Increase rising angle (i.e. the shooting angle of light), can luminous flux be improved.Simultaneously because total reflection mainly occurs in the marginal position incidence angle of the light (cause greatly) of LED chip, the generation of hot spot while reducing total reflection, can also be reduced.
The present invention adopts such scheme, the light that LED chip sends can pass transparent grain, light emission rate is high, little on luminous flux impact, meanwhile, owing to there is refractive index difference (and there is refractive index difference between transparent grain and the fluorescent glue of fluorescent adhesive layer) between transparent grain and the filling glue of layer of silica gel, light reflects when the interface by both, and change rising angle, thus make light more evenly with soft.In addition, the light that blue light and the fluorescent material after being excited send, at each lighting angle Homogeneous phase mixing of LED, effectively adds the exitance of blue light at LED edge, thus solves edge macula lutea problem.
Accompanying drawing explanation
Fig. 1 is the supporting structure schematic diagram (containing LED chip) of embodiments of the invention.
Fig. 2 is the structural representation of embodiments of the invention.
Fig. 3 is the generalized section of the optical lens of embodiments of the invention.
Fig. 4 is the schematic diagram of the transparent grain change opticpath of the concave lens shape of embodiments of the invention.
Fig. 5 is the schematic diagram of the transparent grain change opticpath of the triangular pyramid shape of embodiments of the invention.
Fig. 6 is the sectional view of the transparent grain of the octahedra shape of embodiments of the invention.
Embodiment
Now the present invention is further described with embodiment by reference to the accompanying drawings.
A kind of method improving great power LED hot spot of the present invention, it is realized by the transparent grain of uniformly dispersing polyhedral structure in the layer of silica gel in existing LED encapsulation structure and/or fluorescent adhesive layer.Described transparent grain accounts for the 2%-10% weight ratio of filling glue.So fill glue and account for 90%-98% weight ratio, concrete, described transparent grain is the SiO of the PMMA transparent grain of concave lens shape, 3 to 8 shapes
2transparent grain and be greater than the hybrid particles of polyhedron-shaped PC transparent grain of 8; Described SiO
2transparent grain accounts for the 0.6%-3.7% weight ratio of filling glue, and described PC transparent grain accounts for the 0.2%-2.3% weight ratio of filling glue, and described PMMA transparent grain accounts for the 1.2%-6.3% weight ratio of filling glue.The maximum gauge of transparent grain described above is 100-500um.By being scattered with the transparent grain of above-mentioned polyhedral structure in layer of silica gel and/or fluorescent adhesive layer, the course of light can be changed, make light dispersed.
As a specific embodiment, as shown in Figure 1-Figure 3, this LED encapsulation structure comprises the layer of silica gel 3 that LED chip 1, support 2, fluorescent adhesive layer 5, optical lens 4 and the filling glue by the transparent grain that distributed polyhedral structure form.Support 2 is provided with the pedestal 14 of the cup of placing LED chip 1, the positive conductive feet 11 of being drawn by wire 13 by the both positive and negative polarity of LED chip 1 and negative conductive feet 12 and coated above-mentioned positive conductive feet 11 and negative conductive feet 12; Described LED chip 1 is positioned in the cup of described support 2, and described fluorescent adhesive layer 5 covers described LED chip 1 completely, and described layer of silica gel 3 is between fluorescent adhesive layer 5 and optical lens 4.Described support 2 is also provided with through hole 16, for injecting filling glue.
Wherein, described layer of silica gel 3 comprises filling glue, fills the transparent grain being evenly distributed with polyhedral structure in glue, in the present embodiment, chooses SiO
2transparent grain accounts for 2% weight ratio of filling glue, and described PC transparent grain accounts for 1.5% weight ratio of filling glue, and described PMMA transparent grain accounts for 3% weight ratio of filling glue.Transparent grain selects SiO
2transparent grain, PC transparent grain and PMMA transparent grain, the refractive index of above-mentioned material and the filling glue refractive index of layer of silica gel close, the coefficient of expansion is close.Also can choose other refractive indexes about about 1.5 transparent material particle.
Concrete, due to SiO
2transparent grain refractive index (1.55), PC transparent grain refractive index (1.5872) and PMMA transparent grain refractive index (1.49) are all a little more than the refractive index (being generally 1.4) of filling glue, light is by transparent grain with when filling glue interface between the two, and light offsets.Fig. 4 is the schematic diagram of the PMMA transparent grain change opticpath of concave lens shape.According to the law of refraction, light angle in the transparent grain medium of concave lens shape is little, and the angle in silica gel medium is large.Parallel rays is by after the transparent grain of concave lens shape, and light is dispersed to all directions.Light is again through the SiO of larger 3 to 8 shapes of refractive index
2transparent grain and refractive index larger be greater than the transparent grain of the somes such as the polyhedron-shaped PC transparent grain of 8 after, after disperse function repeatedly, dispersion angle becomes larger, and light reaches equally distributed effect in all angles.Therefore, a kind of LED of uniformly light-emitting can be obtained by the present invention.Fig. 5 is the schematic diagram of the transparent grain change opticpath of triangular pyramid shape.Fig. 6 is the sectional view of the PC transparent grain of octahedra shape.
The exiting surface of described optical glass is coarse.This coarse exiting surface specifically several hemispherical projections is formed.This coarse exiting surface can be realized by photoetching or mould realizes.Like this, through this matsurface, the shooting angle of light is larger, reduces the total reflection of light.
In order to check the optical homogeneity of LED emergent light spot, choosing arbitrarily 5 samples, being recorded the chromaticity coordinates values for spatial distribution of each LED by 9 methods, according to standard deviation and the dominant wavelength distribution of its chromaticity coordinates of formulae discovery, result is as shown in the table:
| Sample number | Sample 1 | Sample 2 | Sample 3 | Sample 4 | Sample 5 |
| 9 standard deviations | 0.00479 | 0.00517 | 0.00443 | 0.00469 | 0.00471 |
| Dominant wavelength (nm) | 502-528 | 485-502 | 492-504 | 493-506 | 475-481 |
As seen from the above table, the chromaticity coordinates standard deviation of 5 samples is all relatively little, and dominant wavelength ranges distribution is also less, and therefore, above-mentioned technique can better improve the problem of great power LED hot spot, make emergent light spot evenly, reduce edge macula lutea phenomenon simultaneously.
Lower mask body introduces the preparation of above-mentioned transparent grain:
1. SiO
2transparent grain (i.e. glass transparent particle): use the method for laser cutting by glass-cutting, obtain 3 to 8 shapes.Also the method for available hydrogen fluoric acid corrosion obtains the shape of needs;
2. PC transparent grain: obtain refractive index between 1.4-1.6 by the method for mould extrusion modling, shape is be greater than polyhedron-shaped, the PC material that molecular weight is between 2-20 ten thousand of 8;
3. PMMA transparent grain: obtain refractive index between 1.4-1.6 by the method for mould extrusion modling, shape is concave lens shape, the molecular weight PMMA material between 2-20 ten thousand.
When making LED encapsulation structure of the present invention, first making and filling glue, in filling glue, add the transparent grain of 2%-10% weight ratio; Then on support 2, complete the die bond bonding wire of LED chip 1, then put fluorescent glue and form fluorescent adhesive layer 5, then optical lens 4 is covered support 2 and flanging, be then mixed with the filling glue of transparent grain by the through hole perfusion on support 2.
Can certainly fill at fluorescent adhesive layer, also can fill in layer of silica gel and fluorescent adhesive layer, its principle is filled with above-mentioned layer of silica gel simultaneously, here no longer repeated description.
The present invention is different from present conventional spread powder, because only cannot by spread powder, light, on the surface of spread powder, diffuse reflection occurs, then can reduce luminous flux.Because the present invention adds three kinds of difformity different refractivity mixed transparent particles in filling glue, and only can through transparent grain, its light emission rate is high, little on luminous flux impact.Meanwhile, owing to there is refractive index difference between transparent grain and filling glue, light reflects when the interface by both, and changes rising angle, thus makes light more evenly with soft.In addition, select the particle within the scope of 100-500um, make the dispersion of light more even.
Although specifically show in conjunction with preferred embodiment and describe the present invention; but those skilled in the art should be understood that; not departing from the spirit and scope of the present invention that appended claims limits; can make a variety of changes the present invention in the form and details, be protection scope of the present invention.
Claims (3)
1. improve a method for great power LED hot spot, it is characterized in that: the transparent grain being uniformly distributed polyhedral structure in the layer of silica gel in LED encapsulation structure and/or fluorescent adhesive layer, described transparent grain accounts for the 2%-10% weight ratio of filling glue; Described transparent grain is the SiO of the PMMA transparent grain of concave lens shape, 3 to 8 shapes
2transparent grain and be greater than the hybrid particles of polyhedron-shaped PC transparent grain of 8; Described SiO
2transparent grain accounts for the 0.6%-3.7% weight ratio of filling glue, and described PC transparent grain accounts for the 0.2%-2.3% weight ratio of filling glue, and described PMMA transparent grain accounts for the 1.2%-6.3% weight ratio of filling glue;
Described LED encapsulation structure comprises LED chip, support, fluorescent adhesive layer, optical lens and layer of silica gel; Support is provided with the pedestal of the cup of placing LED chip, the positive conductive feet of being drawn by wire by the both positive and negative polarity of LED chip and negative conductive feet and coated above-mentioned positive conductive feet and negative conductive feet; LED chip is positioned in the cup of described support, and fluorescent adhesive layer covers described LED chip completely, and described layer of silica gel is between fluorescent adhesive layer and optical lens;
The maximum gauge of described transparent grain is 100-500um.
2. a kind of method improving great power LED hot spot according to claim 1, is characterized in that: the exiting surface of described optical glass is coarse.
3. a kind of method improving great power LED hot spot according to claim 2, is characterized in that: this coarse exiting surface specifically several hemispherical projections is formed.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210403009.8A CN102945919B (en) | 2012-10-22 | 2012-10-22 | Method for improving light spots of high-power light-emitting diode (LED) |
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|---|---|---|---|
| CN201210403009.8A CN102945919B (en) | 2012-10-22 | 2012-10-22 | Method for improving light spots of high-power light-emitting diode (LED) |
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| CN102945919B true CN102945919B (en) | 2015-04-22 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4066024A4 (en) * | 2019-11-25 | 2023-11-15 | IPC Works Limited | Light filter and the method thereof |
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| CN103681991A (en) * | 2013-12-20 | 2014-03-26 | 纳晶科技股份有限公司 | Silicone lens for LED (Light Emitting Diode) packaging and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101118291A (en) * | 2006-08-04 | 2008-02-06 | 鸿富锦精密工业（深圳）有限公司 | Pervasion piece |
| CN101135739A (en) * | 2006-09-01 | 2008-03-05 | 颖台科技股份有限公司 | Diffusing plate having multiple aspheric surface surface structure |
| CN102544259A (en) * | 2011-12-28 | 2012-07-04 | 深圳市华高光电科技有限公司 | LED light spot improving method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100773993B1 (en) * | 2006-03-10 | 2007-11-08 | (주)케이디티 | Photoluminescent sheet |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101118291A (en) * | 2006-08-04 | 2008-02-06 | 鸿富锦精密工业（深圳）有限公司 | Pervasion piece |
| CN101135739A (en) * | 2006-09-01 | 2008-03-05 | 颖台科技股份有限公司 | Diffusing plate having multiple aspheric surface surface structure |
| CN102544259A (en) * | 2011-12-28 | 2012-07-04 | 深圳市华高光电科技有限公司 | LED light spot improving method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4066024A4 (en) * | 2019-11-25 | 2023-11-15 | IPC Works Limited | Light filter and the method thereof |
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Denomination of invention: Method for improving problem of light spots of high-power light-emitting diode (LED) Effective date of registration: 20150923 Granted publication date: 20150422 Pledgee: China Co truction Bank Corp Xiamen branch Pledgor: Xiamen Colorful Optoelectronics Technology Co.,Ltd. Registration number: 2015350000074 |
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