CN102931179A - 一种发光装置 - Google Patents

一种发光装置 Download PDF

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Publication number
CN102931179A
CN102931179A CN2012104561379A CN201210456137A CN102931179A CN 102931179 A CN102931179 A CN 102931179A CN 2012104561379 A CN2012104561379 A CN 2012104561379A CN 201210456137 A CN201210456137 A CN 201210456137A CN 102931179 A CN102931179 A CN 102931179A
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China
Prior art keywords
electrode
main body
welding parts
led
chips
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Pending
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CN2012104561379A
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English (en)
Inventor
孔德宝
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NANJING JIANGNING DISTRICT DINGMAO ELECTRONIC TECHNOLOGY CENTER
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NANJING JIANGNING DISTRICT DINGMAO ELECTRONIC TECHNOLOGY CENTER
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Priority to CN2012104561379A priority Critical patent/CN102931179A/zh
Publication of CN102931179A publication Critical patent/CN102931179A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

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  • Led Device Packages (AREA)

Abstract

一种发光装置，包括主体、电极、LED芯片、芯片焊接部件及透光部（6），所述主体包括凹槽（5），主体上部（4）及间隔基（3），所述间隔基（3）为主体上部（4）周围的凸起，所述电极是从外部接收电源供电，电极包括第一电极（1）和第二电极（2），2个LED芯片分别安装在所述凹槽（5）上外露的第一电极（1）及第二电极（2）上，所述芯片焊接部件包括通过第一芯片焊接部件（7），第二芯片焊接部件（11）及连接两个电极的第三芯片焊接部件（9），通过第一芯片焊接部件（7），第二芯片焊接部件（11）把2个LED芯片即第一LED芯片（8）、第二LED芯片（10）分别连接到第一电极（1）及第二电极（2）上，本发明可以有效增加透光效果。

Description

一种发光装置
技术领域
本发明属于LED封装领域。
背景技术
LED一般用表面粘着型方式封装，以阵列形态安装在印刷电路板上 ，一般来说，LED封装是指由2个引线以及部分纳入内侧，透光部的充填间隔基形成凹槽而制造的模版外壳，凹槽内引线电极上部表面安装的LED芯片，连接引线电极和LED芯片的贴装部位所形成。模版外壳主要由PPA等树脂类的塑料形成，透光部是在凹槽内部密闭LED芯片，根据LED芯片的色彩可以分为含有荧光体或透明树脂，led封装按使用的装置要求多样的尺寸及辉度，Led封装的尺寸主要是受到模版外壳的幅度及高度影响，辉度主要受到芯片的性能，但是透光的透光性树脂的特性及厚度也对辉度的影响比较大，特别是LED封装的尺寸变大时，凹槽的表面积也增多凹槽充填的透光性树脂的量也增多，减少辉度的短处。并且要求LED封装高度的时候凹槽的高度也相应增加，透光性树脂的厚度也增加，增加辉度较难。并且要求模版外壳的侧壁高度增加时芯片产生的光透过透光性树脂的光射到侧壁的量增多。因此可能发生光的吸收及妨碍光按照指向角射出，所以需要满足LED封装的尺寸的同时保持光效率及指向角的PKG设计
发明内容
本发明的目的是提供一种克服现有技术中不足的发光装置。
 
本发明通过以下技术方案实现发明目的；
一种发光装置，包括主体、电极、LED芯片、芯片焊接部件及透光部，所述主体包括凹槽，主体上部及间隔基，所述间隔基为主体上部周围的凸起，所述电极是从外部接收电源供电，电极包括第一电极和第二电极，2个LED芯片分别安装在所述凹槽上外露的第一电极及第二电极上，所述芯片焊接部件包括通过第一芯片焊接部件，第二芯片焊接部件及连接两个电极的第三芯片焊接部件，通过第一芯片焊接部件，第二芯片焊接部件把2个LED芯片即第一LED芯片、第二LED芯片分别连接到第一电极及第二电极上。
本发明中所述主体采用PPA树脂或者陶瓷形成。
 
有益效果：
  本发光装置中的透光部发散的光通过透光部后，达到防止光发散到间隔基或主体上部，特别是主体的尺寸根据间隔基大小所有增加也可以达到凹槽容积的增加，因此透光部不需要变厚，并且可以增加透光效果。
 
附图说明
图1是安装有本发明的整体结构示意图。
具体实施方式
一种发光装置，包括主体、电极、LED芯片、芯片焊接部件及透光部6，主体包括凹槽5，主体上部4及间隔基3，间隔基3为主体上部4周围的凸起，电极是从外部接收电源供电，电极包括第一电极1和第二电极2，2个LED芯片分别安装在所述凹槽5上外露的第一电极1及第二电极2上，芯片焊接部件包括通过第一芯片焊接部件7，第二芯片焊接部件11及连接两个电极的第三芯片焊接部件9，通过第一芯片焊接部件7，第二芯片焊接部件11把2个LED芯片即第一LED芯片8、第二LED芯片10分别连接到第一电极1及第二电极2上。
本发明中的主体采用PPA(polyphthalamide)树脂或者陶瓷形成。本发明中第一电极1和第二电极2的一部分埋入主体内部固定主体。凹槽5是在主体上部4上形成的，凹槽5包括底面及斜面，底面露出第一电极1及第二电极2。斜面连接在主体上部4，间隔基3凸起在主体上部4的中间位置，间隔基3是作为边缘在主体上部的边缘同主体的侧面一同凸起 。透光部6在凹槽5里填充，根据具体体现的led芯片的颜色透光部6可以包含荧光体的树脂或透明树脂。透光部6限位于主体的凹槽5里，所以主体上部是不会被透光部6所遮盖。间隔基3不受发光装置所发出的光影响，同时满足主体的尺寸，所以透光部6发散的光通过透光部6后，达到防止光发散到间隔基3或主体上部4，因此光的损耗会减少。特别是主体的尺寸根据间隔基3的大小所有增加也可以达到凹槽5容积的增加，因此透光部6不需要变厚，并且可以增加透光效果。

Claims (2)

1.一种发光装置，其特征在于：包括主体、电极、LED芯片、芯片焊接部件及透光部（6），所述主体包括凹槽（5），主体上部（4）及间隔基（3），所述间隔基（3）为主体上部（4）周围的凸起，所述电极是从外部接收电源供电，电极包括第一电极（1）和第二电极（2），2个LED芯片分别安装在所述凹槽（5）上外露的第一电极（1）及第二电极（2）上，所述芯片焊接部件包括通过第一芯片焊接部件（7），第二芯片焊接部件（11）及连接两个电极的第三芯片焊接部件（9），通过第一芯片焊接部件（7），第二芯片焊接部件（11）把2个LED芯片即第一LED芯片（8）、第二LED芯片（10）分别连接到第一电极（1）及第二电极（2）上。
2.根据权利要求1所述的一种发光装置，其特征在于：所述主体采用PPA树脂或者陶瓷形成。
CN2012104561379A 2012-11-14 2012-11-14 一种发光装置 Pending CN102931179A (zh)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1471178A (zh) * 2002-07-25 2004-01-28 松下电工株式会社 光电元件部件
CN102157505A (zh) * 2011-01-20 2011-08-17 日月光半导体制造股份有限公司 发光模块
EP2390915A1 (en) * 2010-05-24 2011-11-30 LG Innotek Co., Ltd Light emitting device and light unit having the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1471178A (zh) * 2002-07-25 2004-01-28 松下电工株式会社 光电元件部件
EP2390915A1 (en) * 2010-05-24 2011-11-30 LG Innotek Co., Ltd Light emitting device and light unit having the same
CN102157505A (zh) * 2011-01-20 2011-08-17 日月光半导体制造股份有限公司 发光模块

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Application publication date: 20130213