CN102923711A - Automatic control starting method of polycrystalline silicon reduction furnace - Google Patents
Automatic control starting method of polycrystalline silicon reduction furnace Download PDFInfo
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- CN102923711A CN102923711A CN2012104998253A CN201210499825A CN102923711A CN 102923711 A CN102923711 A CN 102923711A CN 2012104998253 A CN2012104998253 A CN 2012104998253A CN 201210499825 A CN201210499825 A CN 201210499825A CN 102923711 A CN102923711 A CN 102923711A
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Abstract
The invention discloses an automatic control furnace starting method of a polycrystalline silicon reduction furnace, wherein the polycrystalline silicon reduction furnace is automatically started by utilizing a sequence control method, and the automatic control starting method mainly comprises the following steps of nitrogen replacement, silicon core breakdown, hydrogen replacement, hydrogen-air combustion and trichlorosilane feeding. According to the automatic control starting method of the polycrystalline silicon reduction furnace, disclosed by the invention, the reduction furnace runs more stably, the gas replacement is more sufficient, and a mass of labor and operation time is also saved in an automatic control furnace starting process.
Description
Technical field
The present invention relates to the operation control of production of polysilicon equipment, refer in particular to a kind of polycrystalline silicon reducing furnace and automatically control the stove method that opens.
Background technology
At present, the main flow of production of polysilicon technology is improved Siemens both at home and abroad, and this method obtains high purity polycrystalline silicon by trichlorosilane under the hot conditions and hydrogen generation chemical vapour deposition reaction.Reduction furnace is the nucleus equipment of production of polysilicon, and it is the key of production of polysilicon that the operation of reduction furnace is controlled.The reducing furnace start-up stove is an important component part in its cycle of operation, the Starting-up process of reduction furnace generally needs 2-3 hour, at present many by manually open, valve-off realizes, only have individual steps to realize automatic control, Starting-up process has consumed more manpower and time, also is difficult to accurate unification in the operation.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of polycrystalline silicon reducing furnace and automatically controls the stove method that opens, and this method can realize that reduction furnace starts the nitrogen replacement of process, the puncture of silicon core, hydrogen exchange, the hydrogen sky burns and the whole process of charging is controlled automatically.
The technical problem to be solved in the present invention is realized by following scheme: in the assembly of reduction furnace system, raw material trichlorosilane and hydrogen feed control are made of trip valve, under meter, variable valve, displacement comprises trip valve, under meter with nitrogen control, and variable valve and hydrogen share.Be provided with tensimeter and variable valve on the former furnace exhaust gas house steward, be provided with trip valve on the arm that goes off gas treatment and the gas that truncates to reclaim.
The control aspect, the method for employing sequential control in Controlling System, realize automatically opening stove by following concrete steps requirement:
1) nitrogen replacement: open nitrogen trip valve (3), open variable valve (7), it is 30Nm that nitrogen flow is set
3/ h, the nitrogen pressurising will be sent in the reduction furnace, when pressure rise during to 0.4MPa, close variable valve (7), open off gas treatment trip valve (4), open tail gas variable valve (8), when pressure drop during to 0.1MPa, close tail gas variable valve (8), close nitrogen trip valve (3), the number of times that nitrogen charges and discharge displacement loops as required;
2) the silicon core punctures: start the silicon core by signalling methods and puncture electrical system, and return silicon core breakdown signal;
3) hydrogen exchange: open hydrogen trip valve (2), open variable valve (7), it is 40Nm that hydrogen flowing quantity is set
3/ h will send into the hydrogen pressurising in the reduction furnace, when pressure rise during to 0.4MPa, close variable valve (7), open tail gas variable valve (8), when pressure drop during to 0.1MPa, close tail gas variable valve (8), the number of times that hydrogen charges and discharge displacement loops as required;
4) hydrogen is empty burns: open variable valve (7), it is 60Nm that hydrogen flowing quantity is set
3/ h closes off gas treatment trip valve (4), opens the gas that truncates and reclaims trip valve (5), and reduction furnace tail gas is switched to exhaust gas recovery system, then keeps hydrogen to pass into the empty burning of reduction furnace 10-20 minute;
5) trichlorosilane charging: open trichlorosilane trip valve (1), open trichlorosilane variable valve (6), required trichlorosilane flow and hydrogen flowing quantity are set, then trichlorosilane mixes with hydrogen and passes into reduction furnace, begin to carry out chemical vapour deposition reaction, produce polysilicon in the silicon wicking surface deposition of furnace high-temperature.
Principle of work of the present invention and advantage: Starting-up process mainly comprises nitrogen replacement, the puncture of silicon core, hydrogen exchange, hydrogen is empty burns and charging.Wherein, nitrogen replacement is with the air in the high pure nitrogen displacement stove, avoids existing oxygen to make silicon wicking surface oxidation under the hot conditions, and reduction furnace tail gas goes off gas treatment during nitrogen replacement; It is to the energising of the silicon core in stove heating that the silicon core punctures; Hydrogen exchange is that tail gas goes off gas treatment during hydrogen exchange with the nitrogen in the raw material high-purity hydrogen displacement stove; The empty burning of hydrogen is one section front phase buffer of charging, and at this moment tail gas switched to the gas recovery system that truncates; Charging is to pass into the gas mixture of trichlorosilane and hydrogen in the reduction furnace, makes the chemical vapour deposition reaction in the reduction furnace begin to carry out, and produces polysilicon product.
Description of drawings
Fig. 1 is polycrystalline silicon reducing furnace system and device connection diagram.
Fig. 2 automatically controls for this and opens stove method steps figure.
Embodiment
Polycrystalline silicon reducing furnace system has as shown in Figure 1 comprised all autocontrol valves, does not comprise all manual control valves, can arrange as required.Be provided with trip valve (1) in the raw material trichlorosilane feeding line, under meter and variable valve (6), be provided with trip valve (2) in the hydrogen feed line, under meter and variable valve (7), be provided with trip valve (3) and under meter in the nitrogen replacement pipeline, nitrogen flow regulating and controlling valve (7) shares one with hydrogen regulating valve (7), be provided with tail gas variable valve (8) and tensimeter on the former furnace exhaust gas house steward, go to be provided with trip valve (4) on the off gas treatment pipeline, be provided with trip valve (5) on the gas recovery line that truncates.
As shown in Figure 1 and Figure 2, carry out the sequential control programming in Controlling System, the process of stove is opened in control, and concrete steps are as follows:
(1) nitrogen replacement: open nitrogen trip valve (3), open variable valve (7), nitrogen gas stream is set is set to 30Nm
3/ h, the nitrogen pressurising will be sent in the reduction furnace, when pressure rise during to 0.4MPa, close variable valve (7), open off gas treatment trip valve (4), open tail gas variable valve (8), when pressure drop during to 0.1MPa, close tail gas variable valve (8), close nitrogen trip valve (3), the number of times that nitrogen charges and discharge displacement loops as required.
(2) the silicon core punctures: start the silicon core by signalling methods and puncture electrical system, and return silicon core breakdown signal.
(3) hydrogen exchange: open hydrogen trip valve (2), open variable valve (7), it is 40Nm that hydrogen flowing quantity is set
3/ h will send into the hydrogen pressurising in the reduction furnace, when pressure rise during to 0.4MPa, close variable valve (7), open tail gas variable valve (8), when pressure drop during to 0.1MPa, close tail gas variable valve (8), the number of times that hydrogen charges and discharge displacement loops as required.
(4) hydrogen is empty burns: open variable valve (7), it is 60Nm that hydrogen flowing quantity is set
3/ h closes off gas treatment trip valve (4), opens the gas that truncates and reclaims trip valve (5), and reduction furnace tail gas is switched to exhaust gas recovery system, then keeps hydrogen to pass into the empty burning of reduction furnace 10-20 minute.
(5) trichlorosilane charging: open trichlorosilane trip valve (1), open trichlorosilane variable valve (6), required trichlorosilane flow and hydrogen flowing quantity are set, then trichlorosilane mixes with hydrogen and passes into reduction furnace, begin to carry out chemical vapour deposition reaction, produce polysilicon in the silicon wicking surface deposition of furnace high-temperature.
Claims (1)
1. a polycrystalline silicon reducing furnace is automatically controlled and is opened the stove method, it is characterized in that: adopt the method for sequential control, realize automatically opening stove by following concrete steps requirement:
1) nitrogen replacement: open nitrogen trip valve (3), open variable valve (7), it is 30Nm that nitrogen flow is set
3/ h, the nitrogen pressurising will be sent in the reduction furnace, when pressure rise during to 0.4MPa, close variable valve (7), open off gas treatment trip valve (4), open tail gas variable valve (8), when pressure drop during to 0.1MPa, close tail gas variable valve (8), close nitrogen trip valve (3), the number of times that nitrogen charges and discharge displacement loops as required;
2) the silicon core punctures: start the silicon core by signalling methods and puncture electrical system, and return silicon core breakdown signal;
3) hydrogen exchange: open hydrogen trip valve (2), open variable valve (7), it is 40Nm that hydrogen flowing quantity is set
3/ h will send into the hydrogen pressurising in the reduction furnace, when pressure rise during to 0.4MPa, close variable valve (7), open tail gas variable valve (8), when pressure drop during to 0.1MPa, close tail gas variable valve (8), the number of times that hydrogen charges and discharge displacement loops as required;
4) hydrogen is empty burns: open variable valve (7), it is 60Nm that hydrogen flowing quantity is set
3/ h closes off gas treatment trip valve (4), opens the gas that truncates and reclaims trip valve (5), and reduction furnace tail gas is switched to exhaust gas recovery system, then keeps hydrogen to pass into the empty burning of reduction furnace 10-20 minute;
5) trichlorosilane charging: open trichlorosilane trip valve (1), open trichlorosilane variable valve (6), required trichlorosilane flow and hydrogen flowing quantity are set, then trichlorosilane mixes with hydrogen and passes into reduction furnace, begin to carry out chemical vapour deposition reaction, produce polysilicon in the silicon wicking surface deposition of furnace high-temperature.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105204452A (en) * | 2014-06-26 | 2015-12-30 | 新特能源股份有限公司 | Polysilicon reduction furnace interlocking system |
| CN108394905A (en) * | 2017-02-08 | 2018-08-14 | 新特能源股份有限公司 | The full-automatic even running method of reduction furnace |
| CN109292777A (en) * | 2017-07-24 | 2019-02-01 | 新特能源股份有限公司 | Polycrystalline silicon reducing furnace opens the silicon core breakdown method of furnace, opens the method and device of furnace method, production polysilicon |
| CN110078079A (en) * | 2019-05-30 | 2019-08-02 | 重庆大全泰来电气有限公司 | A kind of electronic grade high-purity polycrystalline reduction starting device and starting method |
| CN110879579A (en) * | 2019-11-11 | 2020-03-13 | 青海黄河上游水电开发有限责任公司新能源分公司 | Reduction furnace sequence control method based on DCS (distributed control System) of polycrystalline silicon production device |
| CN112645334A (en) * | 2020-12-21 | 2021-04-13 | 亚洲硅业(青海)股份有限公司 | Furnace start prediction method and system for polycrystalline silicon reduction furnace, storage medium and terminal |
| CN115594182A (en) * | 2022-10-28 | 2023-01-13 | 四川永祥新能源有限公司（Cn） | One-key furnace opening control method for polycrystalline silicon reduction furnace, system and computer readable storage medium thereof |
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| CN201305651Y (en) * | 2008-11-24 | 2009-09-09 | 四川永祥多晶硅有限公司 | Device for mixing chlorsilane and hydrogen in polysilicon production |
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| US20120177559A1 (en) * | 2011-01-07 | 2012-07-12 | Mitsubishi Materials Corporation | Apparatus and method for producing polycrystalline silicon having a reduced amount of boron compounds by forming phosphorus-boron compounds |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105204452A (en) * | 2014-06-26 | 2015-12-30 | 新特能源股份有限公司 | Polysilicon reduction furnace interlocking system |
| CN108394905A (en) * | 2017-02-08 | 2018-08-14 | 新特能源股份有限公司 | The full-automatic even running method of reduction furnace |
| CN108394905B (en) * | 2017-02-08 | 2019-12-31 | 新特能源股份有限公司 | Full-automatic stable operation method for reduction furnace |
| CN109292777A (en) * | 2017-07-24 | 2019-02-01 | 新特能源股份有限公司 | Polycrystalline silicon reducing furnace opens the silicon core breakdown method of furnace, opens the method and device of furnace method, production polysilicon |
| CN110078079A (en) * | 2019-05-30 | 2019-08-02 | 重庆大全泰来电气有限公司 | A kind of electronic grade high-purity polycrystalline reduction starting device and starting method |
| CN110879579A (en) * | 2019-11-11 | 2020-03-13 | 青海黄河上游水电开发有限责任公司新能源分公司 | Reduction furnace sequence control method based on DCS (distributed control System) of polycrystalline silicon production device |
| CN112645334A (en) * | 2020-12-21 | 2021-04-13 | 亚洲硅业(青海)股份有限公司 | Furnace start prediction method and system for polycrystalline silicon reduction furnace, storage medium and terminal |
| CN115594182A (en) * | 2022-10-28 | 2023-01-13 | 四川永祥新能源有限公司（Cn） | One-key furnace opening control method for polycrystalline silicon reduction furnace, system and computer readable storage medium thereof |
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Application publication date: 20130213 |