CN115594182A - One-key furnace opening control method for polycrystalline silicon reduction furnace, system and computer readable storage medium thereof - Google Patents
One-key furnace opening control method for polycrystalline silicon reduction furnace, system and computer readable storage medium thereof Download PDFInfo
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- 230000009467 reduction Effects 0.000 title claims abstract description 144
- 238000000034 method Methods 0.000 title claims abstract description 83
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 30
- 238000003860 storage Methods 0.000 title claims abstract description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 87
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 39
- 239000001257 hydrogen Substances 0.000 claims abstract description 36
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 36
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000007789 gas Substances 0.000 claims abstract description 19
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 9
- 239000000498 cooling water Substances 0.000 claims abstract description 8
- 230000001276 controlling effect Effects 0.000 claims description 47
- 238000002386 leaching Methods 0.000 claims description 16
- 238000011049 filling Methods 0.000 claims description 11
- 238000004590 computer program Methods 0.000 claims description 10
- 238000010926 purge Methods 0.000 claims description 10
- 230000001105 regulatory effect Effects 0.000 claims description 8
- 150000002431 hydrogen Chemical class 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 31
- 230000006870 function Effects 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 238000006722 reduction reaction Methods 0.000 description 101
- 238000004519 manufacturing process Methods 0.000 description 13
- 229920005591 polysilicon Polymers 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000012790 confirmation Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- 230000032798 delamination Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000010865 sewage Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
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- C01B33/02—Silicon
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- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]
- G05B19/41875—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM] characterised by quality surveillance of production
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Abstract
The invention discloses a one-key furnace opening control method for a polycrystalline silicon reduction furnace, a system and a computer readable storage medium thereof, wherein the method comprises the following steps: checking whether the reduction furnace has a furnace starting condition or not, and initializing the functions of the reduction furnace; controlling a furnace barrel cooling water upper water valve and a chassis cooling water upper water valve of the reduction furnace, feeding water to the reduction furnace, and simultaneously controlling the nitrogen gas inflow in the reduction furnace; vacuumizing the reduction furnace to less than-50 kpa, controlling nitrogen to charge the reduction furnace to a pressure 10kpa higher than the tail gas pressure of the reduction furnace, checking leakage of the reduction furnace, and controlling the reduction furnace to release nitrogen after the leakage checking is finished; and (3) controlling hydrogen to replace the reduced pressure reduction furnace, repeatedly replacing for 3-4 times, controlling the hydrogen to punch the reduction furnace to a pressure 10kpa higher than the tail gas pressure of the reduction furnace, and then opening the furnace. The invention can solve a series of operation errors or deviations of manual operation, realize the accurate control of the furnace opening process of the reduction furnace, and is beneficial to reducing the phenomenon of silicon core film growth and improving the quality of polycrystalline silicon.
Description
Technical Field
The invention belongs to the technical field of control of polycrystalline silicon reduction furnaces, and particularly relates to a one-key blow-in control method and a system thereof for a polycrystalline silicon reduction furnace and a computer readable storage medium.
Background
The reduction furnace process is an important process link in the production process of the polycrystalline silicon. In the reducing furnace process, high-purity trichlorosilane is vaporized to form saturated steam, the saturated steam and high-purity hydrogen are mixed in proportion and then are sent into a reducing furnace under the condition of specified temperature and flow, chemical vapor deposition reaction is carried out on the surface of a high-temperature silicon core electrified in the reducing furnace, crystalline silicon is deposited on the surface of the silicon core to enable the diameter of the silicon rod to be continuously increased until the silicon rod reaches the specified diameter, and then the furnace is shut down to take out the silicon rod. In the deposition process of the polycrystalline silicon in the reduction furnace, factors such as heating current, material flow, pressure, air flow distribution and the like of the reduction furnace have great influence on the quality of the silicon rod, so that the operation process of the reduction furnace needs to be controlled finely and strictly.
The operation process of the reduction furnace comprises blowing-in, operation and blowing-out, wherein the blowing-in process is complex in operation, the operation precision requirement is high, the operation precision requirement comprises links of replacement gas purging, reduction furnace pressure charging and releasing replacement, reduction furnace leakage checking, vacuumizing and the like, the operation skill requirement is high, the fault tolerance rate is low, once deviation occurs in the links, the influence on the blowing-in process is caused, silicon core irradiation is possibly polluted, the blowing-in success rate is reduced, and a large amount of production time and materials are wasted. However, the blow-in of the existing reduction furnace is still operated by main control, and the following problems exist:
(1) The operation amount of personnel of the furnace opening process is large, the personnel in the whole reduction furnace process are the most prone to have operation deviation, and the misoperation condition is easy to occur: the silicon core is blown down due to the overlarge opening of the replacement gas valve; opening the wrong valve causes the furnace opening process to be interrupted and even the furnace is opened again; forgetting to stop pressurizing in the pressurizing process can cause overpressure in the furnace; forgetting to close the pressure relief in the pressure relief process can cause the conditions of silicon core pollution and the like caused by reverse string at the rear end, and further, the production efficiency is influenced.
(2) The specific control parameters of the blow-in process are controlled by personnel operation, the conditions of reduction of continuous production efficiency, waste of replacement gas and the like can occur, and the specific control parameters are as follows: the phenomenon of discontinuous operation may occur after the replacement is finished due to the difference of master control skills during the replacement, and the production time is wasted; the continuous purging time of the replacement gas is not controlled in place by personnel, which may cause overlong purging time and waste of the replacement gas.
(3) The safety confirmation items in the blow-in process are carried out by personnel, and safety quality accidents, interruption of the blow-in process flow and even re-blow-in of the blow-in process can be caused by the situations that confirmation is not in place, the confirmation items are omitted and the like.
Based on the situation, in the actual production process, in order to improve the quality of the polycrystalline silicon product and avoid the situations of product quality reduction and safety accidents caused by manual operation of personnel, the key is to reasonably and accurately control the blow-in process of the existing reduction furnace.
In the prior art, in order to realize automatic control of opening of a polycrystalline silicon reduction furnace, the invention with the publication number of CN104787767A discloses a method for starting the polycrystalline silicon reduction furnace, and the method provides a process that after a silicon core is arranged on a chassis of the polycrystalline silicon reduction furnace, a water circulation system of the polycrystalline silicon reduction furnace is started, the silicon core is subjected to preheating treatment, and then the silicon core subjected to the preheating treatment is subjected to breakdown treatment, so that the problem that furnace reversing is easy to occur in the process of starting the furnace can be solved. The method only solves the problem of furnace reversing in the process of silicon core breakdown, and unsafe factors or problems existing in other steps in the process of starting the reducing furnace are not involved.
The invention patent with publication number CN102923711A discloses an automatic control furnace starting method for a polycrystalline silicon reduction furnace, which is characterized in that in a reduction furnace device system, the furnace starting steps of the reduction furnace are as follows by utilizing the cooperation of automatic control devices such as a stop valve, a flowmeter, an adjusting valve, a pressure gauge and the like: the automatic furnace starting of the reduction furnace can be realized by sequentially operating nitrogen replacement, silicon core breakdown, hydrogen replacement, hydrogen air firing and trichlorosilane feeding, the furnace starting time of a manually operated valve can be shortened, and the accuracy and the uniformity of operation are improved. However, with the large-scale development of the polysilicon industry, the single furnace output of the reduction furnace is continuously improved, the increase of the number of silicon cores inevitably causes the increase of the gas consumption and the electric quantity of the reduction furnace, the safety and the operation difficulty in the furnace starting process of the reduction furnace are increased, and the corresponding original single furnace automatic starting control process with low output cannot be applied to the existing high-output production, so that the development and research of a new single furnace starting control method applicable to the existing large-scale production are very important.
The invention patent with publication number CN110879579A discloses a reduction furnace sequence control method based on a DCS system of a polysilicon production device, and the method comprises the following specific program operation steps: the method provides a complete set of sequential control processes of furnace opening, operation and furnace blowing out of a DSC system of the reduction furnace, can reduce the safety risk of abnormal conditions of the reduction furnace caused by incomplete manual monitoring or misoperation, and ensures the safe and stable operation of the reduction furnace.
Disclosure of Invention
The invention aims to provide a one-key blow-in control method for a polycrystalline silicon reduction furnace, which is characterized in that program control is respectively carried out on the cooling water quantity of a reduction furnace cylinder, the cooling water quantity of a reduction chassis and the nitrogen gas inflow according to the stages of starting blow-in and water feeding, and then the whole blow-in process is completed after vacuumizing and gas replacement, so that the problems of misoperation and important operation omission which are easy to occur in manual operation can be solved, the process control is unified, the system control is more stable, and the operation is more accurate. On the basis, the invention also provides a reduction furnace blow-in control system and a computer readable storage medium based on the method, so as to realize automatic intelligent control of the reduction furnace blow-in process.
The invention is realized by the following technical scheme: the one-key furnace opening control method for the polycrystalline silicon reduction furnace comprises the following steps of:
s1, furnace starting preparation, namely checking whether a reduction furnace has furnace starting conditions or not, and carrying out function initialization on the reduction furnace;
s2, emptying and filling water, controlling a furnace barrel cooling water filling valve and a chassis cooling water filling valve of the reduction furnace, filling water into the reduction furnace, and simultaneously controlling the nitrogen gas inflow in the reduction furnace;
s3, replacing nitrogen, namely vacuumizing the reduction furnace to be less than-50 kpa, controlling the nitrogen to charge the reduction furnace to be higher than the tail gas pressure of the reduction furnace by 10kpa, checking leakage of the reduction furnace, and controlling the reduction furnace to release the nitrogen after the leakage checking is finished;
and S4, replacing hydrogen, controlling the hydrogen to replace the decompressed reducing furnace, repeatedly replacing for 3-4 times, controlling the hydrogen to punch the reducing furnace to a pressure 10kpa higher than the tail gas pressure of the reducing furnace, and then opening the furnace.
In the step S2, after the opening of a drum water cut-off valve of the reduction furnace is controlled, a steam regulating valve of an air inlet heater is controlled to heat drum water to 130-140 ℃, then a drum water feeding regulating valve of the reduction furnace is controlled to be opened within 10S to 20m for carrying out dry etching/h,
after the water feeding is finished, controlling a furnace barrel backwater cutting-off valve of the reduction furnace to be opened, controlling a furnace barrel water feeding adjusting valve to adjust to 40 m/h within 1min, starting nitrogen purging timing,
and after the water feeding is finished, controlling a chassis water feeding cut-off valve of the reduction furnace to open, and controlling a chassis water feeding adjusting valve to open within 1min to 20m for carrying out the year/h.
In the step S2, the first step is performed,controlling the nitrogen gas inflow in the reduction furnace to be more than 50Nm 3 /h。
In the step S3, after the nitrogen purging is timed for 15min, the reduction furnace is vacuumized by sequentially controlling the starting of the vacuum pump, the opening of the vacuum valve and the closing of the nitrogen valve, and the vacuum pump is closed when the pressure of the reduction furnace is less than-50 Kpa.
And in the step S3, after vacuumizing, sequentially controlling the sequence of closing the vacuum pump, closing the vacuum valve and opening the nitrogen valve, carrying out nitrogen stamping on the reduction furnace, and controlling the flow of the nitrogen valve to be 550 Nm/h.
In the step S3, after the leakage is checked, the leaching relief valve is controlled to be opened, the pressure in the reduction furnace is relieved to be less than 80kPa, the pressure relief is stopped, the leaching system is disconnected, the start-up valve is controlled to be opened, the pressure in the reduction furnace is continuously relieved to be 10kPa, the pressure relief is stopped, the start-up system is disconnected, and the nitrogen pressure relief is completed.
And in the step S4, starting a hydrogen valve to pressurize the decompressed reducing furnace, controlling the flow rate of the hydrogen valve to be 550 Nm/h, controlling the hydrogen valve to be closed after the pressure in the reducing furnace is 10kPa higher than the tail gas pressure of the reducing furnace, checking for leakage of the reducing furnace, controlling the leaching relief valve to be opened after the leakage is finished, stopping the pressure relief and disconnecting the leaching system after the pressure difference between the pressure in the reducing furnace and the pressure difference of the leaching system is smaller than 20 kPa, and finishing one-time hydrogen replacement.
The reduction furnace blow-in control system comprises a storage, a processor and a computer program stored in the processor for running, wherein the processor executes the computer program to realize the blow-in control method.
A computer-readable storage medium storing a computer program which, when executed by a processor, implements the blow-in control method as described above.
Compared with the prior art, the invention has the following advantages and beneficial effects:
(1) The invention solves the problem of bottleneck of improving the product quality caused by inaccurate control precision of various operations of the reduction furnace in the blow-in process of the existing reduction furnace, and provides the automatic control of blow-in of the reduction furnace according to a computer program, wherein firstly, the blow-in process is divided into four stages: the method comprises the following steps of preparing for starting the furnace, emptying, filling water, replacing nitrogen and replacing hydrogen, and accurately controlling the opening of a valve and the accurate control time through an intelligent control program, so that the control of a water system of the reduction furnace in the emptying and filling water stages is more stable, and the water content and the air content in the reduction furnace can be effectively controlled; in the replacement stage, valves such as a nitrogen valve, a hydrogen valve, a leaching relief valve, a start-up relief valve and the like are respectively controlled, so that stable and accurate operation control is realized, meanwhile, leakage of a reduction furnace system can be further checked, and the optimized operation of a start-up process is realized.
(2) According to the invention, the automatic control in the reduction furnace blowing-in process can be realized by utilizing an intelligent control program, the problems of excessive operation and frequent intervention of personnel in the reduction furnace blowing-in process are solved, the manual workload is reduced, and the misoperation is prevented.
In conclusion, the invention provides an automatically controlled reducing furnace blow-in process, which solves a series of operation errors or deviations when the reducing furnace is manually operated to blow in by improving the reducing furnace blow-in process and combining an intelligent control program, realizes the stabilization and the precision control of the reducing furnace blow-in process, is beneficial to improving the quality of polysilicon products in the production process of polysilicon, saves the using amount of replacement gas, reduces the occurrence of silicon core film growing phenomenon, and has obvious advantages for saving non-production time.
Drawings
FIG. 1 is a photograph of a pressed silicon core (group one).
FIG. 2 is a photograph of a pressed silicon core (group two).
FIG. 3 is a photograph of a pressed silicon core (group three).
FIG. 4 is a photograph of a pressed silicon core (group four).
Detailed Description
The present invention will be described in further detail with reference to examples, but the embodiments of the present invention are not limited thereto.
Example 1:
the embodiment is a one-key furnace starting control method for a polycrystalline silicon reduction furnace based on an automatic control program and an intelligent control program, and the method comprises the following specific steps of:
the method comprises the following steps: preparing for starting the furnace and preparing for starting the furnace,
checking whether the reduction furnace has a furnace starting condition, starting a program control mode, starting a furnace starting time timer, and initializing all functions of the reduction furnace, such as: a ramp function restart, a manual confirm button reset, a step display reset, etc.
Step two: the water is emptied and supplied to the water tank,
the method is used for controlling the water system of the reducing furnace and the air content in the reducing furnace, and comprises the following specific operations:
firstly, controlling the nitrogen valve to open, closing the emptying valve and the furnace barrel to discharge sewage, and ensuring that the nitrogen gas inflow in the reduction furnace is more than 50Nm 3 And h, the positive pressure is maintained in the reduction furnace, so that the safety accident caused by the air entering can be prevented.
Then, after controlling the opening of the furnace drum water cut-off valve of the reduction furnace, controlling the steam regulating valve of the air inlet heater to be opened to 100% in 15s, heating the furnace drum water to 130-140 ℃, then controlling the furnace drum water supply regulating valve of the reduction furnace to be opened to 5% in 10s, at the moment, carrying out water supply with the furnace drum water supply regulating valve flow of 20 m/h,
after the water supply is finished, the furnace barrel backwater cutting-off valve of the reduction furnace is opened in a delayed mode for 2s, the furnace barrel water supply adjusting valve is controlled to be adjusted to 15% within 1min, at the moment, the flow of the furnace barrel water supply adjusting valve is 40m for each hour, nitrogen purging timing is started, after the water supply is finished, the chassis water supply cutting valve of the reduction furnace is automatically opened, and the chassis water supply adjusting valve is controlled to be opened to 20m for each hour within 1 min.
And (5) finishing timing after the nitrogen purging is performed for 15 min.
In this step, can be used for improving the interior temperature of stove through opening stove section of thick bamboo sail regulating valve and chassis sail trip valve, dry to stove steam in, begin nitrogen gas simultaneously and sweep timing in order to reduce water content and air concentration in the stove.
Step three: the nitrogen is replaced by the nitrogen gas,
the step is used for replacing residual air in the reduction furnace and simultaneously realizing leakage detection and inspection of the reduction furnace, and the specific operation is as follows:
and after the nitrogen purging timing is finished, sequentially controlling the starting of the vacuum pump, the opening of the vacuum valve and the closing of the nitrogen valve to vacuumize the reduction furnace, and closing the vacuum pump when the pressure of the reduction furnace is less than-50 Kpa to finish the vacuumizing.
And sequentially controlling the sequence of closing the vacuum pump, closing the vacuum valve and opening the nitrogen valve, carrying out nitrogen stamping on the reduction furnace, controlling the flow of the nitrogen valve to be 550 Nm/h, closing the nitrogen valve when the pressure in the reduction furnace is higher than the tail gas pressure of the reduction furnace by 10kpa, checking the leakage of the reduction furnace, and controlling the reduction furnace to carry out nitrogen pressure relief after the leakage is not checked.
When pressure is relieved, the leaching relief valve is controlled to be opened, the pressure in the reduction furnace is relieved to be less than 80kPa, the pressure relief is stopped, the leaching system is disconnected, the start-up valve is controlled to be opened, the pressure in the reduction furnace is relieved to 10kPa, the pressure relief is stopped, the start-up system is disconnected, and the nitrogen pressure relief is completed.
Step four: the hydrogen is replaced by the hydrogen gas,
the method comprises the following steps of replacing nitrogen in a reduction furnace with hydrogen, and then filling the reduction furnace with hydrogen to prepare the reduction reaction in the reduction furnace, wherein the specific operation steps are as follows:
and (3) starting a hydrogen valve to pressurize the reducing furnace after the nitrogen is decompressed, controlling the flow of the hydrogen valve to be 550 Nm/h, controlling the hydrogen valve to be closed after the pressure in the reducing furnace is 10kPa higher than the tail gas pressure of the reducing furnace, checking for leakage of the reducing furnace, controlling the leaching relief valve to be opened after the leakage is not checked, decompressing the pressure in the reducing furnace to be less than 20 kPa of the pressure of the leaching system, stopping decompressing, disconnecting the leaching system, and finishing primary hydrogen replacement.
And (3) continuously repeating the replacement for 3 times according to the hydrogen replacement mode, releasing the hydrogen punched in the reduction furnace to the recovery system in the fourth hydrogen replacement process, releasing the pressure in the reduction furnace to be less than 20 kPa of the pressure of the recovery system, stopping releasing the pressure, and disconnecting the recovery system to finish the fourth hydrogen replacement.
And after the fourth hydrogen replacement, opening the hydrogen valve for the last pressurizing before blowing-in, controlling the flow of the hydrogen valve at 550 Nm/h, and closing the hydrogen valve when the pressure in the reducing furnace and the pressure difference of the tail gas main pipe are greater than 10kPa to finish the blowing-in process.
Example 2:
the embodiment is a reduction furnace blow-in control system.
The device mainly comprises a memory, a processor and a computer program stored on the processor for running, wherein the processor executes the computer program to realize the blow-in control process of the embodiment 1. .
Example 3:
the embodiment is a computer-readable storage medium.
The computer-readable storage medium stores a computer program that, when executed by a processor, implements the blow-in control process described in embodiment 1.
The electric and DCS system transformation is performed on a certain reduction furnace of the existing reduction hall, and after the transformation, the blow-in process of the reduction furnace is controlled according to the method described in example 1, and the data is shown in table 1 below compared with the blow-in process before the transformation of the reduction furnace.
Before transformation, manual operation is adopted when the reduction furnace is opened, the specific control steps, the temperature, the time and other data are the same as those in the embodiment 1, and the data refer to group one. After the reduction furnace is modified, the automatic blow-in control is carried out on the reduction furnace by adopting the blow-in process described in the embodiment 1, and the data of the automatic blow-in control refers to a group two, a group three and a group four. (the blowing-in processes of each group are the control processes of the same reducing furnace before and after modification, and the process control of each system is ensured to be consistent)
TABLE 1
In table 1 above, the pressing refers to the process of charging the silicon core to enter the production, and as can be seen from the photographs of the pressed silicon core shown in fig. 1 to 4, in the production process of the polysilicon, the silicon core is easily grown (see the part indicated by the circle in fig. 1) without using the automatic furnace start control method, and the pressed silicon core is normal after using the automatic furnace start control method. In the subsequent reduction production process of polysilicon, the silicon core growing film can cause silicon core delamination, which causes product quality reduction, if the silicon core growing film is serious, in order to prevent the occurrence of the quality event of silicon core delamination, the furnace is actively stopped, and the silicon core is installed again, which wastes one furnace of silicon core and also consumes a large amount of non-production time.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and any simple modifications and equivalent variations of the above embodiment according to the technical spirit of the present invention are within the scope of the present invention.
Claims (9)
1. The one-key furnace opening control method for the polycrystalline silicon reduction furnace is characterized by comprising the following steps of: the method comprises the following steps:
s1, furnace starting preparation, namely checking whether a reduction furnace has furnace starting conditions or not, and carrying out function initialization on the reduction furnace;
s2, emptying and filling water, controlling a furnace barrel cooling water filling valve and a chassis cooling water filling valve of the reduction furnace, filling water into the reduction furnace, and simultaneously controlling the nitrogen gas inflow in the reduction furnace;
s3, replacing nitrogen, namely vacuumizing the reduction furnace to be less than-50 kpa, controlling the nitrogen to charge the reduction furnace to be higher than the tail gas pressure of the reduction furnace by 10kpa, checking leakage of the reduction furnace, and controlling the reduction furnace to release the nitrogen after the leakage checking is finished;
and S4, replacing hydrogen, controlling the hydrogen to replace the decompressed reducing furnace, repeatedly replacing for 3-4 times, controlling the hydrogen to punch the reducing furnace to a pressure 10kpa higher than the tail gas pressure of the reducing furnace, and then opening the furnace.
2. The one-key furnace opening control method for the polycrystalline silicon reduction furnace according to claim 1, characterized in that: in the step S2, after the opening of a drum water cut-off valve of the reduction furnace is controlled, a steam regulating valve of an air inlet heater is controlled to heat drum water to 130-140 ℃, then a drum water feeding regulating valve of the reduction furnace is controlled to be opened within 10S to 20m for carrying out dry etching/h,
after the water feeding is finished, controlling a furnace barrel backwater cutting-off valve of the reduction furnace to be opened, controlling a furnace barrel water feeding adjusting valve to adjust to 40 m/h within 1min, starting nitrogen purging timing,
and after the water feeding is finished, controlling a chassis water feeding cut-off valve of the reduction furnace to open, and controlling a chassis water feeding adjusting valve to open within 1min to 20m for carrying out the year/h.
3. The one-key furnace opening control method for the polycrystalline silicon reduction furnace according to claim 1, characterized in that: in the step S2, the nitrogen gas inflow in the reduction furnace is controlled to be more than 50Nm 3 /h。
4. The one-key furnace opening control method for the polycrystalline silicon reduction furnace according to claim 1, characterized in that: in the step S3, after the nitrogen purging is timed for 15min, the reduction furnace is vacuumized by sequentially controlling the starting of the vacuum pump, the opening of the vacuum valve and the closing of the nitrogen valve, and the vacuum pump is closed when the pressure of the reduction furnace is less than-50 Kpa.
5. The one-key furnace opening control method for the polycrystalline silicon reduction furnace according to claim 1, characterized in that: and in the step S3, after vacuumizing, sequentially controlling the sequence of closing the vacuum pump, closing the vacuum valve and opening the nitrogen valve, carrying out nitrogen stamping on the reduction furnace, and controlling the flow of the nitrogen valve to be 550 Nm/h.
6. The one-key furnace opening control method for the polycrystalline silicon reduction furnace according to claim 1, characterized in that: in the step S3, after the leakage is checked, the leaching relief valve is controlled to be opened, the pressure in the reduction furnace is relieved to be less than 80kPa, the pressure relief is stopped, the leaching system is disconnected, the start-up valve is controlled to be opened, the pressure in the reduction furnace is continuously relieved to be 10kPa, the pressure relief is stopped, the start-up system is disconnected, and the nitrogen pressure relief is completed.
7. The one-key furnace opening control method for the polycrystalline silicon reduction furnace according to claim 1, characterized in that: and in the step S4, starting a hydrogen valve to pressurize the decompressed reducing furnace, controlling the flow rate of the hydrogen valve to be 550 Nm/h, controlling the hydrogen valve to be closed after the pressure in the reducing furnace is 10kPa higher than the tail gas pressure of the reducing furnace, performing leak detection on the reducing furnace, controlling the leaching relief valve to be opened after the leak detection is finished, relieving the pressure in the reducing furnace to be less than 20 kPa of the pressure of the leaching system, stopping the pressure relief, disconnecting the leaching system, and finishing one-time hydrogen replacement.
8. A reduction furnace blow-in control system is characterized in that: the blow-in control method comprises a storage, a processor and a computer program stored on the processor, wherein the processor executes the computer program to realize the blow-in control method according to any one of claims 1 to 7.
9. A computer-readable storage medium characterized by: the computer readable storage medium stores a computer program which, when executed by a processor, implements the blow-on control method according to any one of claims 1 to 7.
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