CN203558859U - Device for preparing mixed gas feed for reducing production of polycrystalline silicon - Google Patents
Device for preparing mixed gas feed for reducing production of polycrystalline silicon Download PDFInfo
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- CN203558859U CN203558859U CN201320407879.2U CN201320407879U CN203558859U CN 203558859 U CN203558859 U CN 203558859U CN 201320407879 U CN201320407879 U CN 201320407879U CN 203558859 U CN203558859 U CN 203558859U
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Abstract
The utility model provides a device for preparing a mixed gas feed for reducing production of polycrystalline silicon. The device comprises a body in which a vaporization space is defined, a hydrogen inlet formed in the body, a trichlorosilane inlet formed in the body, a dichlorosilane inlet formed in the body, and a reducing production mixed gas feed outlet formed in the body. Therefore, the one-time conversion rate of trichlorosilane can be increased by using the reducing production mixed gas feed obtained by the device, so that the settling rate of the polycrystalline silicon in a reducing furnace can be increased; moreover, the reducing utilization rate of the trichlorosilane is increased by inducing the gas-phase deposition of dichlorosilane in a control parameter adjustment process.
Description
Technical field
The utility model relates to chemical field, particularly, relates to and prepares the also device of gas mixture feed for original production of polysilicon.
Background technology
A large amount of improved Siemens production technique that adopt in production of polysilicon, at present on domestic and international market sun power with polysilicon, to have more than 85% be to adopt improvement Siemens process production gained; Improvement Siemens process production technology is mainly that the high purity liquid state trichlorosilane of purification gained is mixed in the equipment of feature with hydrogen, liquid trichlorosilane vaporize afterwards to mix to be completely transported to hydrogen and in reduction furnace, on red-hot higher temperature carrier, is carried out vapor deposition reaction in equipment, polysilicon is constantly deposited on silicon core carrier, diameter increases to after certain value, while arriving production requirement, get final product blowing out, complete the process of growth of polysilicon.
But the also original production of preparing at present polysilicon still haves much room for improvement with the device of gas mixture feed.
Utility model content
The utility model is intended to one of solve the problems of the technologies described above at least to a certain extent.For this reason, an object of the present utility model is to propose a kind of also device of gas mixture feed for original production that improves trichlorosilane reduction utilization ratio in preparing polysilicon process.
The utility model is that utility model people completes based on following discovery: the principal reaction in polysilicon deposition process in reduction furnace has: (1) SiHCl
3+ H
2=Si+3HCl; (2) 4SiHCl
3=Si+2H
2+ 3SiCl
4; (3) Si+2HCl=SiH
2c1
2; (4) 2SiHCl
3=SiH
2c1
2+ SiCl
4.Wherein, reaction (1) is hydrogen reduction reaction, is the principal reaction of polysilicon deposition; Reaction (2), (4) are pyrolysis; Reaction (3) is hydrogen-chloride etching pasc reaction; From reaction equation, can find out in side reaction, have dichloro-dihydro silicon to generate; By facts have proved, in feed, add appropriate dichloro-dihydro silicon to be conducive to suppress the carrying out of side reaction, improve a transformation efficiency of trichlorosilane, improve the sedimentation rate of polysilicon in reduction furnace, in addition, reduction furnace operational parameter control is to determine according to the vapour deposition of trichlorosilane, so a small amount of interpolation of dichloro-dihydro silicon can also make to control the vapour deposition of bringing out dichloro-dihydro silicon in parameter adjustment process, thereby has improved the reduction utilization ratio of trichlorosilane.Simultaneously, owing to preparing the also the highest saturated-steam temperature that can only reach chlorosilane in mixing tank of the mixture temperature in gas mixture feed device for original production of polysilicon, can not be heated to higher, therefore from prepare polysilicon also original production with in gas mixture feed device, export the polysilicon that goes also original production with gas mixture feed, course of conveying, there will be liquefaction phenomenon, not only reduced the stability of production system, and reduced also original production and with the form of high-temperature gas, enter that reduction furnace carries out vapor deposition reaction and the efficiency that obtains polysilicon with gas mixture feed.
First object of the present utility model is to provide a kind of also device of gas mixture feed for original production of polysilicon of preparing.This device comprises: body, limits vaporization space in described body; Hydrogen feed mouth, described hydrogen feed mouth is arranged on described body, for introducing described hydrogen to described vaporization space; Trichlorosilane opening for feed, described trichlorosilane opening for feed is arranged on described body, for introducing described trichlorosilane to described vaporization space; Dichloro-dihydro silicon opening for feed, described dichloro-dihydro silicon opening for feed is arranged on described body, for introduce described dichloro-dihydro silicon to described vaporization space; And also gas mixture feed outlet for original production, described also original production is arranged on described body with the outlet of gas mixture feed, for the also original production obtaining is transferred out to the described also device of gas mixture feed for original production of polysilicon of preparing with gas mixture feed.Thus, the also original production gas mixture feed that utilizes this device to obtain, not only can improve a transformation efficiency of trichlorosilane, thereby improves the sedimentation rate of polysilicon in reduction furnace; Can also bring out the vapour deposition of dichloro-dihydro silicon by controlling in parameter adjustment process, thereby improve the reduction utilization ratio of trichlorosilane.
According to the utility model embodiment prepare the also device of gas mixture device feed for original production of polysilicon, can also there is following additional technical characterictic:
According to embodiment of the present utility model, described prepare polysilicon also original production with the device of gas mixture feed, further comprise: temperature-controlling module, described temperature-controlling module is arranged on described body, for controlling the temperature in described vaporization space.Thus, can guarantee that liquid trichlorosilane and liquid dichloro-dihydro silicon are fully vaporized at suitable temperature, and fully mix with hydrogen, can also guarantee to prepare the also stability of the device of gas mixture feed for original production of polysilicon simultaneously.
According to embodiment of the present utility model, described temperature-controlling module is at least one of jacketed type well heater and coil heater.
According to embodiment of the present utility model, described prepare polysilicon also original production with the device of gas mixture feed, further comprise: feed control assembly, described feed control assembly is connected with hydrogen feed mouth, trichlorosilane opening for feed and dichloro-dihydro silicon opening for feed respectively, enters the molar ratio of hydrogen, trichlorosilane and the dichloro-dihydro silicon of described vaporization space for controlling.Thus, by controlling the molar ratio of hydrogen, trichlorosilane and the dichloro-dihydro silicon of vaporization space, can guarantee to prepare the also temperature and pressure in the device of gas mixture feed for original production of polysilicon, thereby guarantee the stability of this device.
According to embodiment of the present utility model, described vaporescence is to carry out under-5 degrees Celsius～temperature of 100 degrees Celsius and the pressure of 0.2MPa～0.8MPa.By prepare the also temperature and pressure of the device of gas mixture feed for original production of polysilicon according to Henry's law, thereby guarantee the stability of each component in gas mixture.
According to embodiment of the present utility model, the mol ratio of described hydrogen and trichlorosilane is 1～10:1.Thus, can guarantee to prepare the also safety and stability of the device of gas mixture feed for original production of polysilicon, and improve and prepare the also efficiency of gas mixture feed for original production of polysilicon, thereby further improve the production efficiency of preparing polysilicon.
According to embodiment of the present utility model, the mol ratio of described hydrogen, trichlorosilane and dichloro-dihydro silicon is 40:10:0.1～1.Thus, can pass through to regulate the ratio of hydrogen, trichlorosilane and dichloro-dihydro silicon, and improve a transformation efficiency of the trichlorosilane in polysilicon reduction, improve the sedimentation rate of polysilicon, reduction production of polysilicon cost.
Another object of the present utility model is to provide a kind of equipment for the preparation of polysilicon.This equipment comprises: go back gas mixture feed preparation facilities for original production, described also original production is the above-mentioned also device of gas mixture feed for original production of polysilicon of preparing with gas mixture feed preparation facilities, for utilizing also original production gas mixture feed of hydrogen, trichlorosilane and dichloro-dihydro silicon acquisition polysilicon; And polycrystalline silicon reducing furnace, described polycrystalline silicon reducing furnace is connected with gas mixture feed preparation facilities with described also original production, and from described also original production, with gas mixture feed preparation facilities, receive also original production gas mixture feed of described polysilicon, for the preparation of polysilicon.Thus, can improve and prepare the also efficiency of gas mixture feed for original production of polysilicon, and further improve and prepare the vapor deposition reaction efficiency in polycrystalline silicon reducing furnace, thus the production efficiency of raising polysilicon.
In addition, according to the equipment for the preparation of polysilicon of the utility model above-described embodiment, can also there is following additional technical characterictic:
According to embodiment of the present utility model, the described equipment for the preparation of polysilicon further comprises: primary heater unit, described primary heater unit is connected with polycrystalline silicon reducing furnace with gas mixture feed preparation facilities with described also original production respectively, for before described reduction gas mixture feed is introduced to polycrystalline silicon reducing furnace, described reduction gas mixture feed is carried out to thermal pretreatment.Thus, can be to being incubated operation through overflash well-mixed reducing gas, thereby prevent in production process also original production with gas mixture feed from prepare polysilicon also original production with the device of gas mixture feed, be transported to the process of reduction furnace because the liquefaction phenomenon of trichlorosilane and dichloro-dihydro silicon appears in temperature reduction, thereby improved the production efficiency of polysilicon.
According to embodiment of the present utility model, described primary heater unit comprises electric heating assembly.Thus, heating function by heating component has solved the also original production Liquefaction of gas mixture feed in course of conveying, guaranteed that also original production enters reduction furnace with gas mixture feed with the form of high-temperature gas and carries out vapor deposition reaction and obtain polysilicon, so improved the production efficiency of polysilicon.
Additional aspect of the present utility model and advantage in the following description part provide, and part will become obviously from the following description, or recognize by practice of the present utility model.
Accompanying drawing explanation
Above-mentioned and/or additional aspect of the present utility model and advantage accompanying drawing below combination obviously and is easily understood becoming the description of embodiment, wherein:
Fig. 1 be according to the utility model embodiment prepare the also device schematic diagram of gas mixture feed for original production of polysilicon, comprising body 100, vaporization space 200, hydrogen feed mouth 300, trichlorosilane opening for feed 400, dichloro-dihydro silicon opening for feed 500 and also gas mixture feed outlet 600 for original production;
Fig. 2 is according to the equipment for the preparation of polysilicon of an embodiment of the utility model, comprising going back device 1000 and the polycrystalline silicon reducing furnace 3000 of original production with gas mixture feed preparation facilities material;
Fig. 3 is the equipment schematic diagram for the preparation of polysilicon according to another embodiment of the utility model, comprising going back gas mixture feed preparation facilities 1000, primary heater unit 2000 and polycrystalline silicon reducing furnace 3000 for original production.
Embodiment
Describe embodiment of the present utility model below in detail, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has the element of identical or similar functions from start to finish.Below by the embodiment being described with reference to the drawings, be exemplary, be intended to for explaining the utility model, and can not be interpreted as restriction of the present utility model.
The term using in the utility model " polysilicon is original production gas mixture feed also " refers in producing the process of polysilicon the gas mixture for reduction reaction.
The utility model is that utility model people completes based on following discovery: the principal reaction restoring in stove in polysilicon deposition process has: (1) SiHCl
3+ H
2=Si+3HCl; (2) 4SiHCl
3=Si+2H
2+ 3SiCl
4; (3) Si+2HCl=SiH
2c1
2; (4) 2SiHCl
3=SiH
2c1
2+ SiCl
4.Wherein, reaction (1) is hydrogen reduction reaction, is the principal reaction of polysilicon deposition; Reaction (2), (4) are pyrolysis; Reaction (3) is hydrogen-chloride etching pasc reaction; From reaction equation, can find out in side reaction, have dichloro-dihydro silicon to generate; By facts have proved, in feed, add appropriate dichloro-dihydro silicon to be conducive to suppress the carrying out of side reaction, improve a transformation efficiency of trichlorosilane, improve the sedimentation rate of polysilicon in reduction furnace, in addition, reduction furnace operational parameter control is to determine according to the vapour deposition of trichlorosilane, so a small amount of interpolation of dichloro-dihydro silicon can also make to control the vapour deposition of bringing out dichloro-dihydro silicon in parameter adjustment process, thereby has improved the reduction utilization ratio of trichlorosilane.Simultaneously, owing to preparing the also the highest saturated-steam temperature that can only reach chlorosilane in gas mixture of the mixture temperature in gas mixture feed device for original production of polysilicon, can not be heated to higher, therefore from prepare polysilicon also original production with in gas mixture feed device, export the polysilicon that goes also original production with gas mixture feed, course of conveying, there will be liquefaction phenomenon, not only reduced the stability of production system, and reduced also original production and with the form of high-temperature gas, enter that reduction furnace carries out vapor deposition reaction and the efficiency that obtains polysilicon with gas mixture feed.
In first aspect of the present utility model, the utility model provides a kind of also device of gas mixture feed for original production of polysilicon of preparing.As shown in Figure 1, this device comprises: body 100, limits vaporization space 200 in described body; Hydrogen feed mouth 300, described hydrogen feed mouth 300 is arranged on described body 100, for introducing described hydrogen to described vaporization space 200; Trichlorosilane opening for feed 400, described trichlorosilane opening for feed 400 is arranged on described body 100, for introducing described trichlorosilane to described vaporization space 200; Dichloro-dihydro silicon opening for feed 500, described dichloro-dihydro silicon opening for feed 500 is arranged on described body 100, for introducing described dichloro-dihydro silicon to described vaporization space 200; And also gas mixture feed outlet 600 for original production, described also original production is arranged on described body 100 with gas mixture feed outlet 600, for the also original production obtaining is transferred out to the described also device of gas mixture feed for original production of polysilicon of preparing with gas mixture feed.According to embodiment of the present utility model, the setting of above-mentioned three opening for feeds is also not particularly limited, those skilled in the art can prepare also setting on the body 100 of the device of gas mixture feed for original production of polysilicon as required, according to embodiment more of the present utility model, hydrogen feed mouth 300, trichlorosilane opening for feed 400 and dichloro-dihydro silicon opening for feed 500 both can divide and be arranged, also can merge setting, as long as reach, hydrogen, trichlorosilane and dichloro-dihydro silicon be passed into and prepares the also object of the device of gas mixture feed for original production of polysilicon.Thus, the also original production gas mixture feed that utilizes this device to obtain, not only can improve a transformation efficiency of trichlorosilane, thereby improves the sedimentation rate of polysilicon in reduction furnace; Can also bring out the vapour deposition of dichloro-dihydro silicon by controlling in parameter adjustment process, thereby improve the reduction utilization ratio of trichlorosilane.
According to embodiment of the present utility model, described prepare polysilicon also original production with the device of gas mixture feed, further comprise: temperature-controlling module 2, described temperature-controlling module is arranged on described body, for controlling the temperature in described vaporization space.Thus, can guarantee that liquid trichlorosilane and liquid dichloro-dihydro silicon are fully vaporized at suitable temperature, and fully mix with hydrogen, can also guarantee to prepare the also stability of the device of gas mixture feed for original production of polysilicon simultaneously.
According to embodiment of the present utility model, described temperature-controlling module is at least one of jacketed type well heater and coil heater.
According to embodiment of the present utility model, described prepare polysilicon also original production with the device of gas mixture feed, further comprise: feed control assembly, described feed control assembly is connected with hydrogen feed mouth, trichlorosilane opening for feed and dichloro-dihydro silicon opening for feed respectively, enters the molar ratio of hydrogen, trichlorosilane and the dichloro-dihydro silicon of described vaporization space for controlling.Thus, by controlling the molar ratio of hydrogen, trichlorosilane and the dichloro-dihydro silicon of vaporization space, can guarantee to prepare the also temperature and pressure in the device of gas mixture feed for original production of polysilicon, thereby guarantee the security and stability of this device.
According to embodiment of the present utility model, the temperature and pressure of vaporescence is also not particularly limited, prepare polysilicon also original production with the pressure of the device of gas mixture feed, can be determined by the follow-up reduction furnace production system of preparing polysilicon, according to specific embodiments more of the present utility model, described prepare polysilicon also original production with the pressure of the device of gas mixture feed, can be 0.2MPa～0.8MPa.According to embodiment of the present utility model, prepare polysilicon also original production by the temperature of the device of gas mixture feed the molecular volume ratio-dependent by hydrogen and trichlorosilane, according to other embodiment of the present utility model, described prepare polysilicon also original production by the temperature of the device of gas mixture feed, can be-5 degrees Celsius～100 degrees Celsius.Thus, by prepare the also temperature and pressure of the device of gas mixture feed for original production of polysilicon according to Henry's law, thereby guarantee the stability of each component in gas mixture, and improve and prepare the also production efficiency of gas mixture feed for original production of polysilicon.
According to embodiment of the present utility model, the molecular volume ratio of described hydrogen and trichlorosilane can be 1～10:1.Thus, can guarantee to prepare the also safety and stability of the device of gas mixture feed for original production of polysilicon, and improve and prepare the also efficiency of gas mixture feed for original production of polysilicon, thereby further improve the production efficiency of preparing polysilicon.
According to specific embodiments more of the present utility model, when preparing polycrystalline silicon reducing furnace production system, be that normal pressure is when produce, hydrogen and trichlorosilane gaseous tension are 0.2Mpa, only need to overcome the drag losses in pipe conveying procedure, therefore hydrogen and trichlorosilane molar volume of gas ratio are 1, prepare polysilicon also original production by the temperature of gas mixture feed device, be 43.68 degrees Celsius; According to other specific embodiments of the present utility model, when hydrogen and trichlorosilane molar volume of gas ratio are 5, prepare polysilicon also original production by the temperature of gas mixture feed device, be 13 degrees Celsius; According to some specific embodiments more of the present utility model, hydrogen and trichlorosilane molar volume of gas ratio are 10, prepare polysilicon also original production by the temperature of gas mixture feed device, be-1.15 degrees Celsius.Thus, can improve and prepare the also efficiency of gas mixture feed for original production of polysilicon, thereby further improve the reduction utilization ratio of trichlorosilane.
According to embodiment more of the present utility model, when preparing polycrystalline silicon reducing furnace production system pressure and be 0.3Mpa, when hydrogen and trichlorosilane gaseous tension are 0.5Mpa, hydrogen and trichlorosilane molar volume of gas ratio are 1, prepare polysilicon also original production by the temperature of gas mixture feed device, be 67.15 degrees Celsius; According to other specific embodiments of the present utility model, hydrogen and trichlorosilane molar volume of gas ratio are 5 o'clock, prepare polysilicon also original production by the temperature of gas mixture feed device, be 31.65 degrees Celsius; According to some specific embodiments more of the present utility model, hydrogen and trichlorosilane molar volume of gas ratio are 10 o'clock, prepare polysilicon also original production by the temperature of gas mixture feed device, be 15.2 degrees Celsius.Thus, can improve and prepare the also efficiency of gas mixture feed for original production of polysilicon, thereby further improve the reduction utilization ratio of trichlorosilane.
According to embodiment more of the present utility model, when preparing polycrystalline silicon reducing furnace production system pressure and be 0.6Mpa, when hydrogen and trichlorosilane gaseous tension are 0.8Mpa, hydrogen and trichlorosilane molar volume of gas ratio are 1, prepare polysilicon also original production by the temperature of gas mixture feed device, be 87.15 degrees Celsius; According to other specific embodiments of the present utility model, hydrogen and trichlorosilane molar volume of gas ratio are 5, prepare polysilicon also original production by the temperature of gas mixture feed device, be 43.68 degrees Celsius; According to some specific embodiments more of the present utility model, hydrogen and trichlorosilane molar volume of gas ratio are 10, prepare polysilicon also original production by the temperature of gas mixture feed device, be 25.9 degrees Celsius.Thus, can improve and prepare the also efficiency of gas mixture feed for original production of polysilicon, thereby further improve the reduction utilization ratio of trichlorosilane.
According to embodiment of the present utility model, the mol ratio of described hydrogen, trichlorosilane and dichloro-dihydro silicon is 40:10:0.1～1.Thus, can pass through to regulate the ratio of hydrogen, trichlorosilane and dichloro-dihydro silicon, and improve a transformation efficiency of the trichlorosilane in polysilicon reduction, improve the sedimentation rate of polysilicon, reduction production of polysilicon cost.
According to embodiment of the present utility model, the supply mode of described trichlorosilane and dichloro-dihydro silicon is also not particularly limited, if can so that trichlorosilane and dichloro-dihydro silicon prepare polysilicon also original production with the device of gas mixture feed, carry out being mixed by abundant vaporization, those skilled in the art can adopt various supply modes, according to embodiment more of the present utility model, can prepare polysilicon and also in the device of original production with gas mixture feed, vaporize being passed into without the qualified trichlorosilane that contains part dichloro-dihydro silicon of purifying, also the trichlorosilane that can just purify dichloro-dihydro silicon after qualified and purify after qualified is passed in particular device and vaporizes respectively.According to embodiment of the present utility model, hydrogen, trichlorosilane and dichloro-dihydro silicon are passed into and prepare the ratio that polysilicon also vaporizes in the device of original production with gas mixture feed and be not particularly limited, as long as can reach be applicable to hydrogen to trichlorosilane and dichloro-dihydro silicon prepare polysilicon also original production with the temperature being applicable to, vaporize in the device of gas mixture feed, and reaching the needed proportioning of chemical reaction of carrying out vapor deposition reaction after fully mixing in reduction furnace, those skilled in the art can regulate as the case may be.According to specific exampless more of the present utility model, the mol ratio of described hydrogen, trichlorosilane and dichloro-dihydro silicon is 40:10:0.1～1, after overflash, the volumetric molar concentration of the dichloro-dihydro silicon in gas mixture and the volumetric molar concentration ratio of trichlorosilane are between 1%-10%.Thus, can be by regulating hydrogen, the ratio of trichlorosilane and dichloro-dihydro silicon, and improve a transformation efficiency of the trichlorosilane in polysilicon reduction, improve the sedimentation rate of polysilicon, reduce production of polysilicon cost, and prepare also hydrogen in the device of gas mixture feed for original production of polysilicon by control, the mol ratio of trichlorosilane and dichloro-dihydro silicon be 40:10:0.1～1 and to prepare polysilicon also original production with the temperature and pressure of the device of gas mixture feed, control, and guarantee to guarantee that with the temperature and pressure being applicable to this equipment can stablize and constantly trichlorosilane and dichloro-dihydro silicon are vaporizated into gas, and to reduction furnace, provide the gas mixture feed of vapor deposition reaction.
Described vaporescence is to carry out under the 0 degree Celsius～temperature of 100 degrees Celsius and the pressure of 0.8MPa.By prepare the also temperature and pressure of the device of gas mixture feed for original production of polysilicon according to Henry's law, thereby guarantee the stability of each component in gas mixture.According to other specific embodiments of the present utility model, described vaporescence carries out under 45 degrees Celsius～47 degrees Celsius.Thus, can guarantee that liquid trichlorosilane and liquid dichloro-dihydro silicon can fully be vaporized, and fully mix with hydrogen.
According to embodiment of the present utility model, liquid trichlorosilane and liquid dichloro-dihydro silicon are vaporizated into the presentation mode of the needed heat of gas and are not particularly limited, as long as can reach the vaporization temperature of trichlorosilane and dichloro-dihydro silicon, can adopt the conventional various type of heating in this area, according to specific embodiment of the utility model, it is by the entrained heat of high-temperature hydrogen that liquid trichlorosilane and liquid dichloro-dihydro silicon are vaporizated into the needed heat part of gas, another part is by also heating unit being set on the device of original production with gas mixture feed and realizing preparing polysilicon, according to concrete example of the present utility model, described heating unit can adopt at least one of jacketed type well heater and coil heater.Can improve thus preparing the also efficiency of the device heating of gas mixture feed for original production of polysilicon, thereby improve, prepare the also efficiency of gas mixture feed for original production of polysilicon, further improve the reduction utilization ratio of trichlorosilane in preparing polysilicon vapor deposition reaction.
According to a concrete example of the present utility model, when the mol ratio of hydrogen, trichlorosilane and dichloro-dihydro silicon is controlled as 40:10:1, prepare polysilicon also original production with the pressure of the device of gas mixture feed, be 0.8Mpa, temperature is 46.55 degrees Celsius.Thus, can improve and prepare the also efficiency of gas mixture feed for original production of polysilicon, thereby further improve the reduction utilization ratio of trichlorosilane.
According to another concrete example of the present utility model, when the mol ratio of hydrogen, trichlorosilane and dichloro-dihydro silicon is controlled as 40:10:0.5, the pressure of reducing gas mixing feed mixing equipment is 0.8Mpa, and temperature is 46.14 degrees Celsius.Thus, can improve and prepare the also efficiency of gas mixture feed for original production of polysilicon, thereby further improve the reduction utilization ratio of trichlorosilane.
According to another concrete example of the present utility model, when the mol ratio of hydrogen, trichlorosilane and dichloro-dihydro silicon is controlled as 40:10:0.1, the pressure of reducing gas mixing feed mixing equipment is 0.8Mpa, and temperature is 45.8 degrees Celsius.Thus, can improve and prepare the also efficiency of gas mixture feed for original production of polysilicon, thereby further improve the reduction utilization ratio of trichlorosilane.
Another object of the present utility model is to provide a kind of equipment for the preparation of polysilicon.This equipment comprises:
Gas mixture feed preparation facilities 1000 for original production also, described also original production is the above-mentioned also device of gas mixture feed for original production of polysilicon of preparing with gas mixture feed preparation facilities, for utilizing also original production gas mixture feed of hydrogen, trichlorosilane and dichloro-dihydro silicon acquisition polysilicon; And
Polycrystalline silicon reducing furnace 3000, described polycrystalline silicon reducing furnace 3000 is connected with gas mixture feed preparation facilities 1000 with described also original production, and from described also original production, with gas mixture feed preparation facilities 3000, receive also original production gas mixture feed of described polysilicon, for the preparation of polysilicon.Thus, can improve the efficiency of preparing polysilicon vapor deposition reaction, thereby improve the productive rate of polysilicon.
In addition, according to the equipment for the preparation of polysilicon of the utility model above-described embodiment, can also there is following additional technical characterictic:
According to embodiment of the present utility model, the described equipment for the preparation of polysilicon further comprises: primary heater unit 2000, described primary heater unit 2000 is connected with polycrystalline silicon reducing furnace 3000 with gas mixture feed preparation facilities 1000 respectively at described also original production, for before described reduction gas mixture feed is introduced to polycrystalline silicon reducing furnace 3000, described reduction gas mixture feed is carried out to thermal pretreatment.Thus, can be to being incubated operation through overflash well-mixed also original production with gas mixture, thereby prevent in production process also original production with gas mixture feed from prepare polysilicon also original production with the device 1000 of gas mixture feed, be transported to the process of polycrystalline silicon reducing furnace 3000 because the liquefaction phenomenon of trichlorosilane and dichloro-dihydro silicon appears in temperature reduction, thereby improved the production efficiency of polysilicon.
According to embodiment of the present utility model, described primary heater unit comprises electric heating assembly.Thus, heating function by heating component has solved the also original production Liquefaction of gas mixture feed in course of conveying, guaranteed that also original production enters reduction furnace with gas mixture feed with the form of high-temperature gas and carries out vapor deposition reaction and obtain polysilicon, so improved the production efficiency of polysilicon.
Below, in conjunction with of the present utility model prepare polysilicon also original production by the method for gas mixture feed, Ben Fafa is carried out to further just explanation.
According to the also method of gas mixture feed for original production of polysilicon of preparing of the present utility model, the mixture that is about to hydrogen, trichlorosilane liquid and dichloro-dihydro silicon liquid carries out vaporescence, to obtain also original production gas mixture feed of polysilicon.Thus, not only can improve a transformation efficiency of trichlorosilane, thereby improve the sedimentation rate of polysilicon in reduction furnace; Can also bring out the vapour deposition of dichloro-dihydro silicon by controlling in parameter adjustment process, thereby improve the reduction utilization ratio of trichlorosilane.
According to embodiment of the present utility model, the supply mode of described trichlorosilane and dichloro-dihydro silicon is also not particularly limited, if can so that trichlorosilane and dichloro-dihydro silicon prepare polysilicon also original production with the device of gas mixture feed, carry out being mixed by abundant vaporization, those skilled in the art can adopt various supply modes, according to embodiment more of the present utility model, the qualified trichlorosilane that contains part dichloro-dihydro silicon of purifying can be passed into prepare polysilicon also original production with carrying out vaporescence in the device of gas mixture feed, also the trichlorosilane of purifying dichloro-dihydro silicon after qualified and purify after qualified can be passed in particular device and vaporize respectively.According to embodiment of the present utility model, by hydrogen, trichlorosilane and dichloro-dihydro silicon be passed into prepare polysilicon also original production by the ratio of carrying out vaporescence in the device of gas mixture feed, be not particularly limited, as long as can reach be applicable to hydrogen to trichlorosilane and dichloro-dihydro silicon prepare polysilicon also original production with the temperature being applicable to, carry out vaporescence in the device of gas mixture feed, and reaching the needed proportioning of chemical reaction of carrying out vapor deposition reaction after fully mixing in reduction furnace, those skilled in the art can regulate as the case may be.According to specific embodiments more of the present utility model, the mol ratio of described hydrogen, trichlorosilane and dichloro-dihydro silicon is 40:10:0.1～1, after vaporescence, the volumetric molar concentration of the dichloro-dihydro silicon in gas mixture and the volumetric molar concentration ratio of trichlorosilane are between 1%～10%.Thus, can be by regulating hydrogen, the ratio of trichlorosilane and dichloro-dihydro silicon, and improve a transformation efficiency of the trichlorosilane in polysilicon reduction, improve the sedimentation rate of polysilicon, reduce production of polysilicon cost, and prepare also hydrogen in the device of gas mixture feed for original production of polysilicon by control, the mol ratio of trichlorosilane and dichloro-dihydro silicon be 40:10:0.1～1 and to prepare polysilicon also original production with the temperature and pressure of the device of gas mixture feed, control, and guarantee to guarantee that with the temperature and pressure being applicable to this equipment can stablize and by vaporescence, change trichlorosilane and dichloro-dihydro silicon into gas constantly, and to reduction furnace, provide the gas mixture feed of vapor deposition reaction.
According to embodiment of the present utility model, the temperature and pressure of vaporescence is also not particularly limited, as long as can be so that liquid trichlorosilane and liquid dichloro-dihydro silicon change gas into by vaporescence, those skilled in the art can regulate according to the particular case of reaction conditions and equipment, according to specific embodiments more of the present utility model, described vaporescence is to carry out under the 0 degree Celsius～temperature of 100 degrees Celsius and the pressure of 0.8MPa.By prepare the also temperature and pressure of the device of gas mixture feed for original production of polysilicon according to Henry's law, thereby guarantee the stability of each component in gas mixture.According to other specific embodiments of the present utility model, described vaporescence carries out under 45 degrees Celsius～47 degrees Celsius.Thus, can guarantee that liquid trichlorosilane and liquid dichloro-dihydro silicon can fully be changed into gas by vaporescence, and fully mix with hydrogen.
According to embodiment of the present utility model, liquid trichlorosilane and liquid dichloro-dihydro silicon are changed into the presentation mode of the needed heat of gas and are not particularly limited by vaporescence, as long as can reach the temperature of the vaporescence of trichlorosilane and dichloro-dihydro silicon, can adopt the conventional various type of heating in this area, according to specific embodiment of the utility model, by vaporescence, changing liquid trichlorosilane and liquid dichloro-dihydro silicon into a gas needed heat part is by the entrained heat of high-temperature hydrogen, another part is by also heating unit being set on the device of original production with gas mixture feed and realizing preparing polysilicon, according to concrete example of the present utility model, described heating unit can adopt at least one of jacketed type well heater and coil heater.Can improve thus preparing the also efficiency of the device heating of gas mixture feed for original production of polysilicon, thereby improve, prepare the also efficiency of gas mixture feed for original production of polysilicon, further improve the reduction utilization ratio of trichlorosilane in preparing polysilicon vapor deposition reaction.
According to a concrete example of the present utility model, when the mol ratio of hydrogen, trichlorosilane and dichloro-dihydro silicon is controlled as 40:10:1, prepare polysilicon also original production with the pressure of the device of gas mixture feed, be 0.8Mpa, temperature is 46.55 degrees Celsius.Thus, can improve and prepare the also efficiency of gas mixture feed for original production of polysilicon, thereby further improve the reduction utilization ratio of trichlorosilane.According to another concrete example of the present utility model, when the mol ratio of hydrogen, trichlorosilane and dichloro-dihydro silicon is controlled as 40:10:0.5, also original production is 0.8Mpa with the pressure of gas mixture feed mixing equipment, and temperature is 46.14 degrees Celsius.Thus, can improve and prepare the also efficiency of gas mixture feed for original production of polysilicon, thereby further improve the reduction utilization ratio of trichlorosilane.
According to another concrete example of the present utility model, when the mol ratio of hydrogen, trichlorosilane and dichloro-dihydro silicon is controlled as 40:10:0.1, also original production is 0.8Mpa with the pressure of gas mixture feed mixing equipment, and temperature is 45.8 degrees Celsius.Thus, can improve and prepare the also efficiency of gas mixture feed for original production of polysilicon, thereby further improve the reduction utilization ratio of trichlorosilane.
According to embodiment of the present utility model, described prepare polysilicon also original production by the method for gas mixture feed, further comprise described also original production introduced in polycrystalline silicon reducing furnace for the preparation of polysilicon with gas mixture feed.Thus, through well-mixed also original production, with gas mixture, can in reduction furnace, carry out polysilicon vapor deposition reaction, by improving a transformation efficiency of the trichlorosilane in polysilicon reduction, improve the sedimentation rate of polysilicon, thereby improve the production efficiency of polysilicon.
According to embodiment of the present utility model, in described also original production is introduced to polycrystalline silicon reducing furnace with gas mixture feed before, described also original production is carried out to thermal pretreatment with gas mixture feed.Thus, can with gas mixture, be incubated operation to well-mixed also original production, thereby prevent in production process also original production with gas mixture feed from prepare polysilicon also original production with the device of gas mixture feed, be transported to the process of reduction furnace because the liquefaction phenomenon of trichlorosilane and dichloro-dihydro silicon appears in temperature reduction, thereby improved the production efficiency of polysilicon.
According to embodiment of the present utility model, described also original production is not less than to 20 degrees Celsius with gas mixture feed pre-heating temperature elevation.Thus, solved the also original production Liquefaction of gas mixture feed in course of conveying, guaranteed that also original production enters reduction furnace with gas mixture feed with the form of high-temperature gas and carries out vapor deposition reaction and obtain polysilicon, so improved the production efficiency of polysilicon.
Embodiment 1
First the liquid trichlorosilane that contains part dichloro-dihydro silicon is passed into and prepares polysilicon also in the device of original production with gas mixture feed, thereby then high-temperature hydrogen is passed into prepare polysilicon also original production with in the device of gas mixture feed, liquid trichlorosilane wherein being carried out to bubbling style vaporization, by hydrogen, when the mol ratio of trichlorosilane and dichloro-dihydro silicon is controlled as 40:10:1, prepare polysilicon also original production with the pressure of the device of gas mixture feed, be 0.8Mpa, temperature is 46.55 degrees Celsius, by obtained hydrogen, gaseous state trichlorosilane and gaseous state dichloro-dihydro silicon from prepare polysilicon also original production with the device of gas mixture feed, be delivered in the reduction furnace of preparing polysilicon.
Embodiment 2
First by through purifying qualified liquid dichloro-dihydro silicon and be passed into and prepare polysilicon also in the device of original production with gas mixture feed through the liquid trichlorosilane of purifying, thereby then high-temperature hydrogen is passed into prepare polysilicon also original production with in the device of gas mixture feed, liquid trichlorosilane wherein being carried out to bubbling style vaporization, by hydrogen, when the mol ratio of trichlorosilane and dichloro-dihydro silicon is controlled as 40:10:0.5, prepare polysilicon also original production with the pressure of the device of gas mixture feed, be 0.8Mpa, temperature is 46.14 degrees Celsius, by obtained hydrogen, gaseous state trichlorosilane and gaseous state dichloro-dihydro silicon from prepare polysilicon also original production with the device of gas mixture feed, through primary heater unit, be delivered in the reduction furnace of preparing polysilicon.
Embodiment 3
First by through purifying liquid dichloro-dihydro silicon and be passed into and prepare polysilicon also in the device of original production with gas mixture feed through the liquid trichlorosilane of purifying, thereby then high-temperature hydrogen is passed into prepare polysilicon also original production with in the device of gas mixture feed, liquid trichlorosilane wherein being carried out to bubbling style vaporization, by hydrogen, when the mol ratio of trichlorosilane and dichloro-dihydro silicon is controlled as 40:10:0.1, prepare polysilicon also original production with the pressure of the device of gas mixture feed, be 0.8Mpa, temperature is 45.8 degrees Celsius, by obtained hydrogen, gaseous state trichlorosilane and gaseous state dichloro-dihydro silicon from prepare polysilicon also original production with the device of gas mixture feed, through primary heater unit, be delivered in the reduction furnace of preparing polysilicon.
In the description of this specification sheets, the description of reference term " embodiment ", " some embodiment ", " example ", " concrete example " or " some examples " etc. means to be contained at least one embodiment of the present utility model or example in conjunction with specific features, structure, material or the feature of this embodiment or example description.In this manual, the schematic statement of above-mentioned term is not necessarily referred to identical embodiment or example.And the specific features of description, structure, material or feature can be with suitable mode combinations in any one or more embodiment or example.
Although illustrated and described embodiment of the present utility model above, be understandable that, above-described embodiment is exemplary, can not be interpreted as restriction of the present utility model, those of ordinary skill in the art can change above-described embodiment in the situation that not departing from principle of the present utility model and aim in scope of the present utility model, modification, replacement and modification.
Claims (5)
1. prepare an also device for gas mixture feed for original production of polysilicon, it is characterized in that, comprising:
Body, limits vaporization space in described body;
For introduce the hydrogen feed mouth of described hydrogen to described vaporization space, described hydrogen feed mouth is arranged on described body;
For introduce the trichlorosilane opening for feed of described trichlorosilane to described vaporization space, described trichlorosilane opening for feed is arranged on described body;
For introduce the dichloro-dihydro silicon opening for feed of described dichloro-dihydro silicon to described vaporization space, described dichloro-dihydro silicon opening for feed is arranged on described body; And
For the also original production obtaining is transferred out to the described also gas mixture feed outlet for also original production of gas mixture feed device for original production of polysilicon of preparing with gas mixture feed, described also original production is arranged on described body with the outlet of gas mixture feed,
Wherein, described prepare polysilicon also original production with the device of gas mixture feed, further comprise:
For controlling the temperature-controlling module in described vaporization space, described temperature-controlling module is arranged on described body,
Described temperature-controlling module is at least one of jacketed type well heater and coil heater.
2. device according to claim 1, is characterized in that, further comprises:
For controlling the feed control assembly of the molar ratio of the hydrogen, trichlorosilane and the dichloro-dihydro silicon that enter described vaporization space, described feed control assembly is connected with hydrogen feed mouth, trichlorosilane opening for feed and dichloro-dihydro silicon opening for feed respectively.
3. for the preparation of an equipment for polysilicon, it is characterized in that, comprising:
For utilizing hydrogen, trichlorosilane and dichloro-dihydro silicon to obtain the also gas mixture feed preparation facilities for also original production of gas mixture feed for original production of polysilicon, described also original production is to prepare the also original production device of gas mixture feed of polysilicon described in claim 1 or 2 with gas mixture feed preparation facilities; And
For the preparation of the polycrystalline silicon reducing furnace of polysilicon, described polycrystalline silicon reducing furnace is connected with gas mixture feed preparation facilities with described also original production, and with gas mixture feed preparation facilities, receives also original production gas mixture feed of described polysilicon from described also original production.
4. equipment according to claim 3, is characterized in that, further comprises:
For before described reduction gas mixture feed is introduced to polycrystalline silicon reducing furnace, described reduction gas mixture feed is carried out to the primary heater unit of thermal pretreatment, described primary heater unit is connected with polycrystalline silicon reducing furnace with gas mixture feed preparation facilities with described also original production respectively.
5. equipment according to claim 4, is characterized in that, described primary heater unit comprises electric heating assembly.
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| CN201320407879.2U CN203558859U (en) | 2013-07-10 | 2013-07-10 | Device for preparing mixed gas feed for reducing production of polycrystalline silicon |
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| CN201320407879.2U CN203558859U (en) | 2013-07-10 | 2013-07-10 | Device for preparing mixed gas feed for reducing production of polycrystalline silicon |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103408019A (en) * | 2013-07-10 | 2013-11-27 | 中国恩菲工程技术有限公司 | Device for preparing mixed gas feed used for reduction production of polycrystalline silicon |
| CN106495162A (en) * | 2015-09-07 | 2017-03-15 | 新特能源股份有限公司 | For the reduction furnace for producing polysilicon and the method for improving polysilicon surface cauliflower |
-
2013
- 2013-07-10 CN CN201320407879.2U patent/CN203558859U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103408019A (en) * | 2013-07-10 | 2013-11-27 | 中国恩菲工程技术有限公司 | Device for preparing mixed gas feed used for reduction production of polycrystalline silicon |
| CN106495162A (en) * | 2015-09-07 | 2017-03-15 | 新特能源股份有限公司 | For the reduction furnace for producing polysilicon and the method for improving polysilicon surface cauliflower |
| CN106495162B (en) * | 2015-09-07 | 2019-07-23 | 新特能源股份有限公司 | For producing the reduction furnace of polysilicon and improving the method for polysilicon surface cauliflower |
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