CN102916668B - Wafer processing method of low-impedance 49/S low-frequency quartz-crystal resonator - Google Patents
Wafer processing method of low-impedance 49/S low-frequency quartz-crystal resonator Download PDFInfo
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- CN102916668B CN102916668B CN201210417636.7A CN201210417636A CN102916668B CN 102916668 B CN102916668 B CN 102916668B CN 201210417636 A CN201210417636 A CN 201210417636A CN 102916668 B CN102916668 B CN 102916668B
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Abstract
The invention discloses a wafer processing method of a low-impedance 49/S low-frequency quartz-crystal resonator. The wafer processing method of the low-impedance 49/S low-frequency quartz-crystal resonator comprises the following steps of: (1) putting a top face chamfer of a long square wafer sticky lump towards the upside; shaping the long square wafer sticky lump into a rhombus by using a trapezoid iron block, wherein the front face of the rhombus forms an included angle of 85 degrees with the side face of the long square wafer sticky lump; (2) mounting a wafer block of the rhomboidal 85-degree sticky lump on a cutting plate, and cutting vertically downwards along the X axis of the wafer block, wherein the front face of the wafer block is parallel to a cutting line, namely, the Z axis of the wafer block forms an included angle of 85 degrees with the cutting line; and (3) after the wafer block is cut, parallel grinding the lumps on two opposite cutting faces to needed sizes, wherein the side face of the wafer forms an included angle of 85 degrees with the front face of the wafer after the lumps are ground. The wafer processing method of the low-impedance 49/S low-frequency quartz-crystal resonator has the advantages that the processed wafer is in rhombus, and the front face forms the included angle of 85 degrees with the side face of the wafer, so that the side face of the wafer forms an included angle of 90 degrees with the opposite face of the front face; and under the same frequency, the edge of the wafer is thinned due to the included angle, an edge effect is eliminated, the energy consumption of wafer vibration is reduced, and the impedance of the quartz-crystal resonator is reduced.
Description
Technical field
The present invention is a kind of wafer processing method of low-impedance 49/S low frequency quartz crystal resonator, belongs to quartz-crystal resonator technical field.
Background technology
Answer the needs of energy-saving consumption-reducing, require that electronic devices and components have lower impedance, for quartz-crystal resonator, frequency is lower, and impedance is higher, and impedance can not have been accomplished lower by existing Wafer Machining.Existing 49/S low-frequency quartz wafer processing method, the lateral side wire cutting method balanced with Y-axis is adopted to process overall dimension, the low frequency crystal resonator that the quartz wafer produced manufactures, impedance is higher, as 3.5MHz only can meet 150ohms specification, 4.0MHz only can meet 100ohms specification, and 6.0 ~ 8.0MHz also only can meet 70ohms specification.These cannot meet the Low ESR specification of city's site requirements.
Summary of the invention
What the present invention proposed is a kind of wafer processing method of low-impedance 49/S low frequency quartz crystal resonator, and its object is intended to the impedance reducing 49/S low frequency quartz crystal resonator further.
Technical solution of the present invention: the wafer processing method of low-impedance 49/S low frequency quartz crystal resonator, comprises following processing step:
1) get that rectangular wafer to be cut is sticky to stick together, this rectangular wafer is glued the chamfering end face (+X face) that sticks together upward, adopt trapezoidal iron block rectangular wafer to be glued to stick together and be shaped as rectangular wafer and glue the front (Z face) sticked together becomes 85 o rhombus with side (Y face);
2) rhombus 85o being glued the crystal block sticked together is contained on septum, and upward, the front (Z face) of crystal block is parallel with line of cut, and namely the Z axis of crystal block becomes 85 o with line of cut angle, cuts vertically downward along crystal block X-axis for this crystal block chamfering end face (+X face);
3) wafer after cutting, carries out parallel mill to two relative cut surfaces and sticks together to required size, changes after sticking together and can see, the wafer side (Y face) through above processing becomes 85o angle with the front (Z face) of wafer.
Advantage of the present invention: the 49/S low-frequency quartz wafer adopting the present invention's processing, manufactured by product out can reduce impedance about more than 40%, can effectively the impedance of existing 49/S 3.5MHz quartz-crystal resonator be risen to meet 90ohms specification from meeting 150ohms specification.The impedance of 4.0MHz quartz-crystal resonator rises to meet 60ohms specification from meeting 100ohms specification.The impedance of 6.0 ~ 8.0MHz quartz-crystal resonator rises to meet 50ohms specification from meeting 70ohms specification.
Accompanying drawing explanation
Fig. 1 is original line cutting method schematic diagram.
Fig. 2 is the original wafer schematic diagram cut out.
Fig. 3 adopts rhombus 85o to glue the structural representation sticked together.
Fig. 4 is cutting method schematic diagram of the present invention.
Fig. 5 is the quartz wafer schematic diagram that the present invention cuts out.
Embodiment
Wafer processing method, comprises following processing step:
1) get that rectangular wafer to be cut is sticky to stick together, this rectangular wafer is glued the chamfering end face (+X face) that sticks together upward, adopt trapezoidal iron block rectangular wafer to be glued to stick together and be shaped as rectangular wafer and glue the front (Z face) sticked together becomes 85 o rhombus (as Fig. 3) with side (Y face);
2) rhombus 85o being glued the crystal block sticked together is contained on septum, and upward, the front (Z face) of crystal block is parallel with line of cut, and namely the Z axis of crystal block becomes 85 o with line of cut angle, carries out vertically downward cutting (as Fig. 4) along crystal block X-axis for this crystal block chamfering end face (+X face);
3) wafer after cutting, carries out parallel mill to two relative cut surfaces and sticks together to required size, changes after sticking together and can see, the wafer side (Y face) through above processing becomes 85o angle (as Fig. 5) with the front (Z face) of wafer.
The wafer diamondwise be processed into, front (i.e. Z face) and side (Y face) angle are 85o, thus make wafer side (Y face) have an angle being less than 90 o with front (Z face) and opposite face thereof, for same frequency, edge is thinning because of this angle, reach elimination edge effect, reduce the energy ezpenditure of wafer vibration, thus reduce the impedance of quartz-crystal resonator.
Claims (1)
1. the wafer processing method of low-impedance 49/S low frequency quartz crystal resonator, is characterized in that the method, comprises following processing step:
1) get that rectangular wafer to be cut is sticky to stick together, this rectangular wafer is glued the chamfering end face that sticks together upward, adopt trapezoidal iron block that sticky for rectangular wafer sticking together is shaped as crystal block, crystal block glues the front sticked together becomes 85 o rhombus with side;
2) rhombus 85o being glued the crystal block sticked together is contained on septum, and upward, the front of crystal block is parallel with line of cut for this crystal block chamfering end face, and namely the Z axis of crystal block becomes 85 o with line of cut angle, cuts vertically downward along crystal block X-axis;
3) wafer after cutting, carries out parallel mill to two relative cut surfaces and sticks together to required size, changes after sticking together and can see, the wafer side through above processing becomes 85o angle with the front of wafer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210417636.7A CN102916668B (en) | 2012-10-29 | 2012-10-29 | Wafer processing method of low-impedance 49/S low-frequency quartz-crystal resonator |
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| CN201210417636.7A CN102916668B (en) | 2012-10-29 | 2012-10-29 | Wafer processing method of low-impedance 49/S low-frequency quartz-crystal resonator |
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| CN102916668A CN102916668A (en) | 2013-02-06 |
| CN102916668B true CN102916668B (en) | 2015-07-22 |
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| CN113306028A (en) * | 2021-05-10 | 2021-08-27 | 中山市海晶电子有限公司 | Preparation method of quartz wafer with 3225-8MHZ resonator mounted on surface of ultra-small resistor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101123423A (en) * | 2006-08-09 | 2008-02-13 | 爱普生拓优科梦株式会社 | AT cut quartz crystal resonator element and method for manufacturing the same |
| CN202353524U (en) * | 2011-11-21 | 2012-07-25 | 深圳中电熊猫晶体科技有限公司 | High-performance 49-S quartz-crystal resonator |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2003318699A (en) * | 2002-04-23 | 2003-11-07 | Piedekku Gijutsu Kenkyusho:Kk | Quartz unit and manufacturing method thereof |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101123423A (en) * | 2006-08-09 | 2008-02-13 | 爱普生拓优科梦株式会社 | AT cut quartz crystal resonator element and method for manufacturing the same |
| CN202353524U (en) * | 2011-11-21 | 2012-07-25 | 深圳中电熊猫晶体科技有限公司 | High-performance 49-S quartz-crystal resonator |
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Effective date of registration: 20220118 Address after: 065000 Jingming Road, Langfang Development Zone, Langfang City, Hebei Province Patentee after: LANGFANG CHINA ELECTRONICS PANDA CRYSTAL TECHNOLOGY Corp. Patentee after: Nanjing Zhongdian panda Crystal Technology Co., Ltd Address before: 518103 building 1-2, second industrial zone, Fengtang Avenue, Tangwei, Fuyong street, Bao'an District, Shenzhen, Guangdong Patentee before: CHINA ELECTRONICS PANDA CRYSTAL TECHNOLOGY Co.,Ltd. |
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