CN202998018U

CN202998018U - Low impedance wafer of 49/S low frequency quartz crystal resonator

Info

Publication number: CN202998018U
Application number: CN 201220683474
Authority: CN
Inventors: 杜知清
Original assignee: CHINA ELECTRONICS PANDA CRYSTAL TECHNOLOGY Co Ltd
Current assignee: CHINA ELECTRONICS PANDA CRYSTAL TECHNOLOGY Co Ltd
Priority date: 2012-12-12
Filing date: 2012-12-12
Publication date: 2013-06-12
Anticipated expiration: 2022-12-12

Abstract

The utility model relates to a low impedance wafer of a 49/S low frequency quartz crystal resonator. The low impedance wafer of the 49/S low frequency quartz crystal resonator is characterized in that a 85-degree included angle exists between a side surface (Y surface) of a wafer and a right side (Z surface) of the wafer. The advantages of the utility model are that the processed wafer is rhombic, the included angle between the side surface and the right side is 85-degree, so that a 90-degree included angle exists between the side surface of the wafer and the right side and a relative surface of the wafer; for a same frequency, an edge is thinned due to the included angle, so that an edge effect is eliminated, and the vibration energy consumption of the wafer and the impedance of the quartz crystal resonator are reduced.

Description

The wafer of low-impedance 49/S low frequency quartz crystal resonator

Technical field

The utility model is a kind of wafer of low-impedance 49/S low frequency quartz crystal resonator, belongs to the quartz-crystal resonator technical field.

Background technology

Answer the needs of energy-saving consumption-reducing, require electronic devices and components that lower impedance is arranged, for quartz-crystal resonator, frequency is lower, and impedance is just higher, and existing Wafer Machining can not have been accomplished impedance lower.Existing 49/S low frequency quartz wafer processing method, adopt the lateral side wire cutting method processing overall dimension with the Y-axis balance, the low frequency crystal resonator that the quartz wafer of producing is made, impedance is higher, only can satisfy the 150ohms specification as 3.5MHz, 4.0MHz only can satisfy the 100ohms specification, 6.0～8.0MHz also only can satisfy the 70ohms specification.These can't the desired Low ESR specification of satisfying the market.

Summary of the invention

The utility model proposes a kind of wafer of low-impedance 49/S low frequency quartz crystal resonator, its purpose is intended to further reduce the impedance of 49/S low frequency quartz crystal resonator.

Technical solution of the present utility model: its structure is that wafer side (Y face) becomes the 85o angle with the front (Z face) of wafer.

Advantage of the present utility model: with 49/S low frequency quartz wafer, manufacturing product out can reduce impedance approximately more than 40%, can be effectively the impedance that has 49/S 3.5MHz quartz-crystal resonator now is risen to and satisfies the 90ohms specification from satisfying the 150ohms specification.4.0MHz the impedance of quartz-crystal resonator rises to and satisfies the 60ohms specification from satisfying the 100ohms specification.6.0 the impedance of～8.0MHz quartz-crystal resonator rises to and satisfies the 50ohms specification from satisfying the 70ohms specification.

Description of drawings

Fig. 1 is original line cutting method schematic diagram.

Fig. 2 is the original wafer schematic diagram that cuts out.

Fig. 3 adopts the sticking structural representation that sticks together of rhombus 85o.

Fig. 4 is cutting method schematic diagram of the present invention.

Fig. 5 is the quartz wafer schematic diagram that the present invention cuts out.

In figure 1 is line cutting, the 2nd, do not cut crystal block, the 3rd, former processed wafer, the 4th, and 85 ° of sticking rectangular, the 5th of sticking together of rhombus, trapezoidal iron block, the 6th, sticking rectangular of sticking together of 85o be to be cut, the 7th, the novel wafer that processes.

Embodiment

The contrast accompanying drawing, its structure is that wafer side (Y face) becomes the 85o angle with the front (Z face) of wafer.

Embodiment

Wafer processing method comprises following processing step:

1) get that rectangular wafer to be cut is sticking to stick together,, adopts trapezoidal iron block that sticking the sticking together of rectangular wafer is shaped as rectangular wafer and glues the front (Z face) that sticks together and become the rhombus (as Fig. 3) of 85 o with side (Y face) with the sticking chamfering end face (+X face) that sticks together of this rectangular wafer up;

2) the sticking crystal block that sticks together of rhombus 85o is contained on septum, this crystal block chamfering end face (+X face) up, the front of crystal block (Z face) is parallel with line of cut, namely the Z axis of crystal block becomes 85 o with the line of cut angle, cuts vertically downward (as Fig. 4) along the crystal block X-axis;

3) wafer after the cutting, carry out parallel mill to two relative cut surfaces and stick together to required size, can see after change sticks together, and the wafer side (Y face) of the above processing of process becomes 85o angle (as Fig. 5) with the front (Z face) of wafer.

The wafer diamondwise that is processed into, positive (being the Z face) is 85o with side (Y face) angle, thereby make wafer side (Y face) and positive (Z face) and opposite face thereof have one less than the angle of 90 o, for same frequency, the edge is because of this angle attenuation, reach the elimination edge effect, reduce the energy consumption of wafer vibration, thereby reduce the impedance of quartz-crystal resonator.

Claims

1. the wafer of low-impedance 49/S low frequency quartz crystal resonator, is characterized in that wafer side Y face becomes the 85o angle with the positive Z face of wafer.