CN102916668A - Wafer processing method of low-impedance 49/S low-frequency quartz-crystal resonator - Google Patents

Abstract

The invention discloses a wafer processing method of a low-impedance 49/S low-frequency quartz-crystal resonator. The wafer processing method of the low-impedance 49/S low-frequency quartz-crystal resonator comprises the following steps of: (1) putting a top face chamfer of a long square wafer sticky lump towards the upside; shaping the long square wafer sticky lump into a rhombus by using a trapezoid iron block, wherein the front face of the rhombus forms an included angle of 85 degrees with the side face of the long square wafer sticky lump; (2) mounting a wafer block of the rhomboidal 85-degree sticky lump on a cutting plate, and cutting vertically downwards along the X axis of the wafer block, wherein the front face of the wafer block is parallel to a cutting line, namely, the Z axis of the wafer block forms an included angle of 85 degrees with the cutting line; and (3) after the wafer block is cut, parallel grinding the lumps on two opposite cutting faces to needed sizes, wherein the side face of the wafer forms an included angle of 85 degrees with the front face of the wafer after the lumps are ground. The wafer processing method of the low-impedance 49/S low-frequency quartz-crystal resonator has the advantages that the processed wafer is in rhombus, and the front face forms the included angle of 85 degrees with the side face of the wafer, so that the side face of the wafer forms an included angle of 90 degrees with the opposite face of the front face; and under the same frequency, the edge of the wafer is thinned due to the included angle, an edge effect is eliminated, the energy consumption of wafer vibration is reduced, and the impedance of the quartz-crystal resonator is reduced.

Description

The wafer processing method of low-impedance 49/S low frequency quartz crystal resonator

Technical field

The present invention is a kind of wafer processing method of low-impedance 49/S low frequency quartz crystal resonator, belongs to the quartz-crystal resonator technical field.

Background technology

Answer the needs of energy-saving consumption-reducing, require electronic devices and components that lower impedance is arranged, for quartz-crystal resonator, frequency is lower, and impedance is just higher, and existing Wafer Machining can not have been accomplished impedance lower.Existing 49/S low frequency quartz wafer processing method, adopt the lateral side wire cutting method processing overall dimension with the Y-axis balance, the low frequency crystal resonator that the quartz wafer of producing is made, impedance is higher, only can satisfy the 150ohms specification such as 3.5MHz, 4.0MHz only can satisfy the 100ohms specification, 6.0～8.0MHz also only can satisfy the 70ohms specification.These can't the desired Low ESR specification of satisfying the market.

Summary of the invention

What the present invention proposed is a kind of wafer processing method of low-impedance 49/S low frequency quartz crystal resonator, and its purpose is intended to further reduce the impedance of 49/S low frequency quartz crystal resonator.

Technical solution of the present invention: the wafer processing method of low-impedance 49/S low frequency quartz crystal resonator comprises following processing step:

1) gets that rectangular wafer to be cut is sticking to stick together,, adopt trapezoidal iron block that sticking the sticking together of rectangular wafer is shaped as the sticking front (Z face) that sticks together of rectangular wafer becomes 85 o with side (Y face) rhombus with the sticking chamfering end face (+X face) that sticks together of this rectangular wafer up;

2) the sticking crystal block that sticks together of rhombus 85o is contained on the septum, this crystal block chamfering end face (+X face) up, the front of crystal block (Z face) is parallel with line of cut, namely the Z axis of crystal block becomes 85 o with the line of cut angle, cuts vertically downward along the crystal block X-axis;

3) wafer after the cutting carries out parallel mill to two relative cut surfaces and sticks together to required size, can see after change sticks together, and the wafer side (Y face) of the above processing of process becomes the 85o angle with the front (Z face) of wafer.

Advantage of the present invention: the 49/S low frequency quartz wafer that adopts the present invention's processing, it is about more than 40% that manufacturing product out can reduce impedance, can be effectively the impedance that has 49/S 3.5MHz quartz-crystal resonator now risen to and satisfies the 90ohms specification from satisfying the 150ohms specification.4.0MHz the impedance of quartz-crystal resonator rises to and satisfies the 60ohms specification from satisfying the 100ohms specification.6.0 the impedance of～8.0MHz quartz-crystal resonator rises to and satisfies the 50ohms specification from satisfying the 70ohms specification.

Description of drawings

Fig. 1 is original line cutting method schematic diagram.

Fig. 2 is the original wafer schematic diagram that cuts out.

Fig. 3 adopts the sticking structural representation that sticks together of rhombus 85o.

Fig. 4 is cutting method schematic diagram of the present invention.

Fig. 5 is the quartz wafer schematic diagram that the present invention cuts out.

Embodiment

Wafer processing method comprises following processing step:

1) gets that rectangular wafer to be cut is sticking to stick together,, adopt trapezoidal iron block that sticking the sticking together of rectangular wafer is shaped as the sticking front (Z face) that sticks together of rectangular wafer becomes 85 o with side (Y face) rhombus (such as Fig. 3) with the sticking chamfering end face (+X face) that sticks together of this rectangular wafer up;

2) the sticking crystal block that sticks together of rhombus 85o is contained on the septum, this crystal block chamfering end face (+X face) up, the front of crystal block (Z face) is parallel with line of cut, namely the Z axis of crystal block becomes 85 o with the line of cut angle, cuts vertically downward (such as Fig. 4) along the crystal block X-axis;

3) wafer after the cutting carries out parallel mill to two relative cut surfaces and sticks together to required size, can see after change sticks together, and the wafer side (Y face) of the above processing of process becomes 85o angle (such as Fig. 5) with the front (Z face) of wafer.

The wafer diamondwise that is processed into, positive (being the Z face) is 85o with side (Y face) angle, thereby make wafer side (Y face) and positive (Z face) and opposite face thereof have one less than the angle of 90 o, for same frequency, the edge is because of this angle attenuation, reach the elimination edge effect, reduce the energy consumption of wafer vibration, thereby reduce the impedance of quartz-crystal resonator.

Claims (1)

1. the wafer processing method of low-impedance 49/S low frequency quartz crystal resonator is characterized in that the method, comprises following processing step:

1) gets that rectangular wafer to be cut is sticking to stick together,, adopt trapezoidal iron block that sticking the sticking together of rectangular wafer is shaped as the sticking front (Z face) that sticks together of rectangular wafer becomes 85 o with side (Y face) rhombus with the sticking chamfering end face (+X face) that sticks together of this rectangular wafer up;

2) the sticking crystal block that sticks together of rhombus 85o is contained on the septum, this crystal block chamfering end face (+X face) up, the front of crystal block (Z face) is parallel with line of cut, namely the Z axis of crystal block becomes 85 o with the line of cut angle, cuts vertically downward along the crystal block X-axis;

3) wafer after the cutting carries out parallel mill to two relative cut surfaces and sticks together to required size, can see after change sticks together, and the wafer side (Y face) of the above processing of process becomes the 85o angle with the front (Z face) of wafer.

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