CN103552162A - Method for removing silicon slice bonding surface check lines - Google Patents
Method for removing silicon slice bonding surface check lines Download PDFInfo
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- CN103552162A CN103552162A CN201310457564.3A CN201310457564A CN103552162A CN 103552162 A CN103552162 A CN 103552162A CN 201310457564 A CN201310457564 A CN 201310457564A CN 103552162 A CN103552162 A CN 103552162A
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- glue
- stria
- micro mist
- silicon chip
- backing plate
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Abstract
The invention discloses a method for removing silicon slice bonding surface check lines and relates to the field of polycrystalline silicon cutting techniques. A structure for implementing the method comprises an adhesive base plate (1), a silicon rod (4), a glue layer (2) and a glue removing tool (3), the hardness of the glue layer (2) is changed so that cutting condition changes are minimal when steel lines cut to the glue layer (2), and cut check lines on the surface of the silicon rod (4) can be removed. The method for removing the silicon slice bonding surface check lines has the advantages that the practicability is high, the operation is convenient, the problem that the check lines are prone to be retained when the steel lines cut the silicon rod (4) is effectively solved, subsequent machining and usage is greatly facilitated, and requirements of customers are met.
Description
[technical field]
The present invention relates to polysilicon cutting technique field, especially relate to a kind of method of eliminating silicon chip bonding plane stria.
[background technology]
Known, the principle of multi-line cutting machine cutting semiconductor silicon chip, copper-plated steel wire by multiple tracks high-speed cruising carries mortar silicon rod is carried out to grinding and then process in blocks exactly, existing technique for sticking just simply sticks together silicon rod and bonding backing plate with glue, but because the hardness after glue curing and the hardness of silicon rod fall far short and have certain elasticity, in frictioning, need to utilize frictioning instrument that the remaining glue at silicon rod and bonding backing plate place is drawn and scraped totally, when being cut to the position that silicon rod contacts with bonding backing plate, unexpected variation due to cutting condition, the mortar that glue-line carries steel wire has played the effect that stops and filter, so just affect the grinding force in cutting process, being embodied in silicon chip surface is exactly more serious stria, this stria has had a strong impact on follow-up using and processing.
[summary of the invention]
In order to overcome the deficiency in background technology, the invention discloses a kind of method of eliminating silicon chip bonding plane stria, the present invention is by changing the hardness of glue-line, and the cutting condition while making steel wire cut to glue-line changes minimum, with this, reaches the object of eliminating silicon rod surface cutting stria.
In order to realize described goal of the invention, the present invention adopts following technical scheme:
Eliminate a method for silicon chip bonding plane stria, comprise bonding backing plate, silicon rod, glue-line and frictioning instrument, its operating procedure is as follows:
The first step, gets 10% micro mist, removes to dry (95 ℃/2 hours) after impurity and remove wherein moisture, then falls after the bulky grain in micro mist standby with 800 object strainer filterings;
Further, get respectively 40% A glue and 40% B glue, then put into impregnation cup rapid stirring even, after stirring, add again the micro mist after oven dry to stir again, after stirring, silicon rod is sticked on bonding backing plate, glue adhesive curing such as rear grade and after 7-10 minutes, form glue-line, recycling frictioning instrument shovels unnecessary glue along the side of bonding backing plate.
The hardness of described micro mist is 9-9.5(Mohs), grain size of micropowder is 0.005-0.015mm.
The viscosity of described A glue and B glue is 40000-55000cps/25 ℃, the solidification intensity >=13Mpa of A glue and B glue.
Owing to having adopted technique scheme, the present invention has following beneficial effect:
A kind of method of eliminating silicon chip bonding plane stria of the present invention, comprise bonding backing plate, silicon rod, glue-line and frictioning instrument, by changing the hardness of glue-line, the cutting condition while making steel wire cut to glue-line changes minimum, with this, reaches the object of eliminating silicon rod surface cutting stria; The present invention is practical, operates more convenient, easily leaves the problem of stria while efficiently solving steel wire cutting silicon rod, has greatly facilitated follow-up processing and use, has met client's requirement.
[accompanying drawing explanation]
Fig. 1 is processing cross section structure schematic diagram of the present invention;
In figure: 1, bonding backing plate; 2, glue-line; 3, frictioning instrument; 4, silicon rod.
[specific embodiment]
Explanation the present invention that can be detailed by the following examples, discloses object of the present invention and is intended to protect all technological improvements in the scope of the invention.
A kind of method of eliminating silicon chip bonding plane stria described in 1, comprises bonding backing plate 1, silicon rod 4, glue-line 2 and frictioning instrument 3 by reference to the accompanying drawings, and its operating procedure is as follows:
The first step, gets 10% micro mist, removes to dry (95 ℃/2 hours) after impurity and remove wherein moisture, then falls after the bulky grain in micro mist standby with 800 object strainer filterings;
Further, get respectively 40% A glue and 40% B glue, then put into impregnation cup rapid stirring even, after stirring, add again the micro mist after oven dry to stir again, after stirring, silicon rod 4 is sticked on bonding backing plate 1, glue adhesive curing such as rear grade and after 7-10 minutes, form glue-line 2, recycling frictioning instrument 3 shovels unnecessary glue along the side of bonding backing plate 1; The hardness of described micro mist is 9-9.5(Mohs), grain size of micropowder is 0.005-0.015mm; The viscosity of described A glue and B glue is 40000-55000cps/25 ℃, the solidification intensity >=13Mpa of A glue and B glue.
Part not in the detailed description of the invention is prior art.
Claims (3)
1. eliminate a method for silicon chip bonding plane stria, comprise bonding backing plate (1), silicon rod (4), glue-line (2) and frictioning instrument (3), it is characterized in that: the operating procedure of the method for described elimination silicon chip bonding plane stria is as follows:
The first step, gets 10% micro mist, removes to dry (95 ℃/2 hours) after impurity and remove wherein moisture, then falls after the bulky grain in micro mist standby with 800 object strainer filterings;
Further, get respectively 40% A glue and 40% B glue, then put into impregnation cup rapid stirring even, after stirring, add again the micro mist after oven dry to stir again, after stirring, silicon rod (4) is sticked on bonding backing plate (1), glue adhesive curing such as rear grade and after 7-10 minutes, form glue-line (2), recycling frictioning instrument (3) shovels unnecessary glue along the side of bonding backing plate (1).
2. a kind of method of eliminating silicon chip bonding plane stria according to claim 1, is characterized in that: the hardness of described micro mist is 9-9.5(Mohs), grain size of micropowder is 0.005-0.015mm.
3. a kind of method of eliminating silicon chip bonding plane stria according to claim 1, is characterized in that: the viscosity of described A glue and B glue is 40000-55000cps/25 ℃ the solidification intensity >=13Mpa of A glue and B glue.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310457564.3A CN103552162A (en) | 2013-09-30 | 2013-09-30 | Method for removing silicon slice bonding surface check lines |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310457564.3A CN103552162A (en) | 2013-09-30 | 2013-09-30 | Method for removing silicon slice bonding surface check lines |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103552162A true CN103552162A (en) | 2014-02-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310457564.3A Pending CN103552162A (en) | 2013-09-30 | 2013-09-30 | Method for removing silicon slice bonding surface check lines |
Country Status (1)
| Country | Link |
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| CN (1) | CN103552162A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108144814A (en) * | 2017-12-21 | 2018-06-12 | 重庆超硅半导体有限公司 | A kind of uniform gluing adhering method of integrated circuit silicon single crystal rod |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009221363A (en) * | 2008-03-17 | 2009-10-01 | Shin Etsu Chem Co Ltd | Resin composition for manufacturing semiconductor device |
| CN101914359A (en) * | 2010-09-04 | 2010-12-15 | 山西天能科技有限公司 | Bar glue |
| US20110052853A1 (en) * | 2009-08-31 | 2011-03-03 | Yuki Sugo | Adhesive film with dicing sheet and method of manufacturing the same |
| CN102876274A (en) * | 2012-10-22 | 2013-01-16 | 南京艾布纳密封技术有限公司 | Glue for cutting process of solar cell silicon wafers |
-
2013
- 2013-09-30 CN CN201310457564.3A patent/CN103552162A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009221363A (en) * | 2008-03-17 | 2009-10-01 | Shin Etsu Chem Co Ltd | Resin composition for manufacturing semiconductor device |
| US20110052853A1 (en) * | 2009-08-31 | 2011-03-03 | Yuki Sugo | Adhesive film with dicing sheet and method of manufacturing the same |
| CN101914359A (en) * | 2010-09-04 | 2010-12-15 | 山西天能科技有限公司 | Bar glue |
| CN102876274A (en) * | 2012-10-22 | 2013-01-16 | 南京艾布纳密封技术有限公司 | Glue for cutting process of solar cell silicon wafers |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108144814A (en) * | 2017-12-21 | 2018-06-12 | 重庆超硅半导体有限公司 | A kind of uniform gluing adhering method of integrated circuit silicon single crystal rod |
| CN108144814B (en) * | 2017-12-21 | 2020-11-03 | 重庆超硅半导体有限公司 | Uniform gluing and bonding method for single crystal silicon rod for integrated circuit |
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Application publication date: 20140205 |