CN103552162A - Method for removing silicon slice bonding surface check lines - Google Patents

Method for removing silicon slice bonding surface check lines Download PDF

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Publication number
CN103552162A
CN103552162A CN201310457564.3A CN201310457564A CN103552162A CN 103552162 A CN103552162 A CN 103552162A CN 201310457564 A CN201310457564 A CN 201310457564A CN 103552162 A CN103552162 A CN 103552162A
Authority
CN
China
Prior art keywords
glue
stria
micro mist
silicon chip
backing plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310457564.3A
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Chinese (zh)
Inventor
马明涛
邵斌
王振国
郭立洲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Luoyang Hongtai Semiconductor Co Ltd
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Luoyang Hongtai Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Luoyang Hongtai Semiconductor Co Ltd filed Critical Luoyang Hongtai Semiconductor Co Ltd
Priority to CN201310457564.3A priority Critical patent/CN103552162A/en
Publication of CN103552162A publication Critical patent/CN103552162A/en
Pending legal-status Critical Current

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Abstract

The invention discloses a method for removing silicon slice bonding surface check lines and relates to the field of polycrystalline silicon cutting techniques. A structure for implementing the method comprises an adhesive base plate (1), a silicon rod (4), a glue layer (2) and a glue removing tool (3), the hardness of the glue layer (2) is changed so that cutting condition changes are minimal when steel lines cut to the glue layer (2), and cut check lines on the surface of the silicon rod (4) can be removed. The method for removing the silicon slice bonding surface check lines has the advantages that the practicability is high, the operation is convenient, the problem that the check lines are prone to be retained when the steel lines cut the silicon rod (4) is effectively solved, subsequent machining and usage is greatly facilitated, and requirements of customers are met.

Description

A kind of method of eliminating silicon chip bonding plane stria
[technical field]
The present invention relates to polysilicon cutting technique field, especially relate to a kind of method of eliminating silicon chip bonding plane stria.
[background technology]
Known, the principle of multi-line cutting machine cutting semiconductor silicon chip, copper-plated steel wire by multiple tracks high-speed cruising carries mortar silicon rod is carried out to grinding and then process in blocks exactly, existing technique for sticking just simply sticks together silicon rod and bonding backing plate with glue, but because the hardness after glue curing and the hardness of silicon rod fall far short and have certain elasticity, in frictioning, need to utilize frictioning instrument that the remaining glue at silicon rod and bonding backing plate place is drawn and scraped totally, when being cut to the position that silicon rod contacts with bonding backing plate, unexpected variation due to cutting condition, the mortar that glue-line carries steel wire has played the effect that stops and filter, so just affect the grinding force in cutting process, being embodied in silicon chip surface is exactly more serious stria, this stria has had a strong impact on follow-up using and processing.
[summary of the invention]
In order to overcome the deficiency in background technology, the invention discloses a kind of method of eliminating silicon chip bonding plane stria, the present invention is by changing the hardness of glue-line, and the cutting condition while making steel wire cut to glue-line changes minimum, with this, reaches the object of eliminating silicon rod surface cutting stria.
In order to realize described goal of the invention, the present invention adopts following technical scheme:
Eliminate a method for silicon chip bonding plane stria, comprise bonding backing plate, silicon rod, glue-line and frictioning instrument, its operating procedure is as follows:
The first step, gets 10% micro mist, removes to dry (95 ℃/2 hours) after impurity and remove wherein moisture, then falls after the bulky grain in micro mist standby with 800 object strainer filterings;
Further, get respectively 40% A glue and 40% B glue, then put into impregnation cup rapid stirring even, after stirring, add again the micro mist after oven dry to stir again, after stirring, silicon rod is sticked on bonding backing plate, glue adhesive curing such as rear grade and after 7-10 minutes, form glue-line, recycling frictioning instrument shovels unnecessary glue along the side of bonding backing plate.
The hardness of described micro mist is 9-9.5(Mohs), grain size of micropowder is 0.005-0.015mm.
The viscosity of described A glue and B glue is 40000-55000cps/25 ℃, the solidification intensity >=13Mpa of A glue and B glue.
Owing to having adopted technique scheme, the present invention has following beneficial effect:
A kind of method of eliminating silicon chip bonding plane stria of the present invention, comprise bonding backing plate, silicon rod, glue-line and frictioning instrument, by changing the hardness of glue-line, the cutting condition while making steel wire cut to glue-line changes minimum, with this, reaches the object of eliminating silicon rod surface cutting stria; The present invention is practical, operates more convenient, easily leaves the problem of stria while efficiently solving steel wire cutting silicon rod, has greatly facilitated follow-up processing and use, has met client's requirement.
[accompanying drawing explanation]
Fig. 1 is processing cross section structure schematic diagram of the present invention;
In figure: 1, bonding backing plate; 2, glue-line; 3, frictioning instrument; 4, silicon rod.
[specific embodiment]
Explanation the present invention that can be detailed by the following examples, discloses object of the present invention and is intended to protect all technological improvements in the scope of the invention.
A kind of method of eliminating silicon chip bonding plane stria described in 1, comprises bonding backing plate 1, silicon rod 4, glue-line 2 and frictioning instrument 3 by reference to the accompanying drawings, and its operating procedure is as follows:
The first step, gets 10% micro mist, removes to dry (95 ℃/2 hours) after impurity and remove wherein moisture, then falls after the bulky grain in micro mist standby with 800 object strainer filterings;
Further, get respectively 40% A glue and 40% B glue, then put into impregnation cup rapid stirring even, after stirring, add again the micro mist after oven dry to stir again, after stirring, silicon rod 4 is sticked on bonding backing plate 1, glue adhesive curing such as rear grade and after 7-10 minutes, form glue-line 2, recycling frictioning instrument 3 shovels unnecessary glue along the side of bonding backing plate 1; The hardness of described micro mist is 9-9.5(Mohs), grain size of micropowder is 0.005-0.015mm; The viscosity of described A glue and B glue is 40000-55000cps/25 ℃, the solidification intensity >=13Mpa of A glue and B glue.
Part not in the detailed description of the invention is prior art.

Claims (3)

1. eliminate a method for silicon chip bonding plane stria, comprise bonding backing plate (1), silicon rod (4), glue-line (2) and frictioning instrument (3), it is characterized in that: the operating procedure of the method for described elimination silicon chip bonding plane stria is as follows:
The first step, gets 10% micro mist, removes to dry (95 ℃/2 hours) after impurity and remove wherein moisture, then falls after the bulky grain in micro mist standby with 800 object strainer filterings;
Further, get respectively 40% A glue and 40% B glue, then put into impregnation cup rapid stirring even, after stirring, add again the micro mist after oven dry to stir again, after stirring, silicon rod (4) is sticked on bonding backing plate (1), glue adhesive curing such as rear grade and after 7-10 minutes, form glue-line (2), recycling frictioning instrument (3) shovels unnecessary glue along the side of bonding backing plate (1).
2. a kind of method of eliminating silicon chip bonding plane stria according to claim 1, is characterized in that: the hardness of described micro mist is 9-9.5(Mohs), grain size of micropowder is 0.005-0.015mm.
3. a kind of method of eliminating silicon chip bonding plane stria according to claim 1, is characterized in that: the viscosity of described A glue and B glue is 40000-55000cps/25 ℃ the solidification intensity >=13Mpa of A glue and B glue.
CN201310457564.3A 2013-09-30 2013-09-30 Method for removing silicon slice bonding surface check lines Pending CN103552162A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310457564.3A CN103552162A (en) 2013-09-30 2013-09-30 Method for removing silicon slice bonding surface check lines

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310457564.3A CN103552162A (en) 2013-09-30 2013-09-30 Method for removing silicon slice bonding surface check lines

Publications (1)

Publication Number Publication Date
CN103552162A true CN103552162A (en) 2014-02-05

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CN (1) CN103552162A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108144814A (en) * 2017-12-21 2018-06-12 重庆超硅半导体有限公司 A kind of uniform gluing adhering method of integrated circuit silicon single crystal rod

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009221363A (en) * 2008-03-17 2009-10-01 Shin Etsu Chem Co Ltd Resin composition for manufacturing semiconductor device
CN101914359A (en) * 2010-09-04 2010-12-15 山西天能科技有限公司 Bar glue
US20110052853A1 (en) * 2009-08-31 2011-03-03 Yuki Sugo Adhesive film with dicing sheet and method of manufacturing the same
CN102876274A (en) * 2012-10-22 2013-01-16 南京艾布纳密封技术有限公司 Glue for cutting process of solar cell silicon wafers

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009221363A (en) * 2008-03-17 2009-10-01 Shin Etsu Chem Co Ltd Resin composition for manufacturing semiconductor device
US20110052853A1 (en) * 2009-08-31 2011-03-03 Yuki Sugo Adhesive film with dicing sheet and method of manufacturing the same
CN101914359A (en) * 2010-09-04 2010-12-15 山西天能科技有限公司 Bar glue
CN102876274A (en) * 2012-10-22 2013-01-16 南京艾布纳密封技术有限公司 Glue for cutting process of solar cell silicon wafers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108144814A (en) * 2017-12-21 2018-06-12 重庆超硅半导体有限公司 A kind of uniform gluing adhering method of integrated circuit silicon single crystal rod
CN108144814B (en) * 2017-12-21 2020-11-03 重庆超硅半导体有限公司 Uniform gluing and bonding method for single crystal silicon rod for integrated circuit

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Application publication date: 20140205