CN102903756A - Field effect transistor with diamond metal-insulator-semiconductor structure and preparation method thereof - Google Patents
Field effect transistor with diamond metal-insulator-semiconductor structure and preparation method thereof Download PDFInfo
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- CN102903756A CN102903756A CN2012103278965A CN201210327896A CN102903756A CN 102903756 A CN102903756 A CN 102903756A CN 2012103278965 A CN2012103278965 A CN 2012103278965A CN 201210327896 A CN201210327896 A CN 201210327896A CN 102903756 A CN102903756 A CN 102903756A
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 103
- 239000010432 diamond Substances 0.000 title claims abstract description 103
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 230000005669 field effect Effects 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 57
- 229910052751 metal Inorganic materials 0.000 claims abstract description 57
- 238000000034 method Methods 0.000 claims abstract description 56
- 239000002131 composite material Substances 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 22
- 238000005984 hydrogenation reaction Methods 0.000 claims abstract description 15
- 238000002955 isolation Methods 0.000 claims abstract description 8
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 8
- 239000003292 glue Substances 0.000 claims description 34
- 238000006701 autoxidation reaction Methods 0.000 claims description 25
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 238000001704 evaporation Methods 0.000 claims description 20
- 230000008020 evaporation Effects 0.000 claims description 20
- 229920002120 photoresistant polymer Polymers 0.000 claims description 19
- 230000008569 process Effects 0.000 claims description 17
- 238000011161 development Methods 0.000 claims description 16
- 238000005566 electron beam evaporation Methods 0.000 claims description 14
- 238000004845 hydriding Methods 0.000 claims description 14
- 238000012545 processing Methods 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 238000012360 testing method Methods 0.000 claims description 11
- 238000001035 drying Methods 0.000 claims description 10
- 230000005611 electricity Effects 0.000 claims description 10
- 229940008309 acetone / ethanol Drugs 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 230000004224 protection Effects 0.000 claims description 4
- 230000008719 thickening Effects 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000009832 plasma treatment Methods 0.000 claims description 2
- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 claims 2
- 239000011435 rock Substances 0.000 claims 2
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000003071 parasitic effect Effects 0.000 abstract description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 2
- 229910052593 corundum Inorganic materials 0.000 abstract 2
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 2
- 239000003990 capacitor Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 20
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000008367 deionised water Substances 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000002353 field-effect transistor method Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
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- 238000011160 research Methods 0.000 description 2
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- 238000000151 deposition Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1602—Diamond
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- Engineering & Computer Science (AREA)
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- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The invention provides a field effect transistor with a diamond metal-insulator-semiconductor structure and prepared by means of an auto-oxidation method and a preparation method thereof. The field effect transistor with the diamond metal-insulator-semiconductor structure is structurally characterized in that a conducting channel is formed on a diamond after diamond surface is hydrogenated, two symmetrical Au are arranged on the conducting channel, a Al2O3/TiO2 composite medium film is arranged between the two symmetrical Au, and a metal gate is arranged on the composite medium film. The preparation method comprises the steps of performing surface hydrogenation, performing ohmic contact, performing device isolation, preparing an Al2O3/TiO2 multi-layer composite oxidization film, forming an insulating layer and forming a management information system (MIS) structure. The field effect transistor with the diamond metal-insulator-semiconductor structure has the advantages of effectively protecting the conducting channel layer on the surface of the diamond, adopting a TiO2 material with high dielectric constant to reduce the influence of the medium thickness on transconductance and frequency characteristics of a device, using a separating method to achieve an under-gate medium method, reducing the influence of a parasitic capacitor formed by a gate-side medium on the frequency performance of the device and obtaining a low-gate leakage range and a high-gate working voltage range.
Description
Technical field
What the present invention relates to is a kind of diamond metal-insulator with the preparation of autoxidation method-semiconductor structure field-effect transistor and preparation method thereof, on the diamond that forms conducting channel by surface hydriding, realize the preparation method of high-performance metal-insulator-semiconductor transistor device in conjunction with MULTILAYER COMPOSITE sheet metal autoxidation film process, belong to the technical field of semiconductor device preparation.
Technical background
Diamond is the same with graphite to be made of carbon, but diamond and graphite have very large difference.Diamond is the hardest in the world material, has in fields such as machine cuts, probings very widely to use.Simultaneously, diamond or a kind of very outstanding semi-conducting material have broad stopband, high heat conductance, high critical breakdown electric field, low dielectric constant and the high characteristics such as carrier mobility.The energy gap of diamond (5.5 eV) almost is 5 times of Si material, and critical breakdown strength is more than 3 times of GaN material.Therefore adopt the semiconductor device of diamond preparation can obtain than higher withstand voltage of GaN device.And the thermal conductivity of diamond (20 W/cmK) than the SiC material of perfect heat-dissipating taller 4 times.High thermal conductivity can the Effective Raise device radiating efficiency, reduce the impact that device performance is subject to thermal effect, be the key of development high power device.Simultaneously, the diamond semiconductor material also has high carrier mobility, and its hole mobility is higher than 3000 cm
2/ Vs, and the mobility of electronics is higher than 4000 cm especially
2/ Vs.This makes diamond also have great advantage aspect the research of high-frequency microwave power device.At present, diamond is the ideal semiconductor material of development high power device and high-frequency microwave power device.Yet because diamond needs could synthesize by the method for HTHP usually, the scantling that often is synthesized is all very little, usually can not surpass 1cm.Therefore, limited the diamond semiconductor device progress of research.Simultaneously, because diamond has wide energy gap, stablize the development that diamond semiconductor device is being perplexed in effective doping always.The significant difference of semi-conducting material and metal and insulator is exactly the variation that semi-conducting material can effectively be controlled by mixing material internal resistivity, realizes the control of device current in conjunction with schottky junction, pn knot etc.At present, diamond can be realized by the mode of boron-doping, p and s mixing.Adopt boron can realize the p-type doping, and adopt p and s can realize that N-shaped mixes.Because diamond is wide bandgap semiconductor materials, the problem (boron 0.37eV, phosphorus 0.5eV, sulphur 0.4-0.6eV) that adopts boron, p and s to realize mixing and all face high activation energy.High activation energy means that the ionization efficient of impurity is difficult to improve, and therefore, adopts boron, p and s to realize that the method difficulty of mixing at room temperature obtains high carrier concentration.In order to address this problem, Many researchers has been developed the method that δ mixes at present.By in a very thin layer, mixing the doping that a large amount of impurity is realized high concentration.But this doping method, the mobility of charge carrier all can be affected in the control of doping content and the material.Adopt the method for surface hydriding can improve the carrier concentration of diamond by obstructed overdoping, and the concentration that obtains the thin layer hole can reach 10
13Cm
-2, under 120 K-400 K temperature ranges, can keep stable.The method of surface hydriding, the dangling bonds on diamond surface that utilized the effective passivation of hydrogen atom can obtain low surface density of states (less than 10
11Cm
-2).Diamond field effect transistor based on the development of surface hydriding diamond adopts schottkybarrier structure usually.Yet, adopt this structure can have larger grid leak electricity, be unfavorable for that diamond transistor is in the application of microwave.Adopt the grid leak electricity that metal-insulator semiconductor (MIS) structure can the establishment device, improve device grid voltage modification scope.Usually adopt at present SiO in the development
x, Al
2O
3, CaF
2And BaF
2Deng.Yet the relative dielectric constant of these materials is not very high, and therefore, used material thickness all can not be very thick.If the blocked up grid that will affect of medium are to the control ability of raceway groove, thereby affect the transconductance characteristic of device.Process diamond in conjunction with the hydrogen meter face, this invention adopts the high/low complex thin film preparation method of autoxidation, has developed the new method that realizes the preparation of low grid leak electricity diamond MIS structure microwave field effect transnistor device of a cover.
Summary of the invention
What the present invention proposed is a kind of diamond metal-insulator with the preparation of autoxidation method-semiconductor structure field-effect transistor and preparation method thereof; adopt the surface hydriding method to introduce conductive layer at diamond surface; adopt the evaporation oxidation metal to form dielectric material, protected to the full extent the surface conductance layer that forms behind the diamond surface hydriding.In dielectric film, introduce the TiO with high-k
2Material utilizes TiO
2The characteristic of material high-k, the dielectric constant of raising laminated film integral body weakens thickness of dielectric layers to the impact of device transconductance characteristic.Pass through Al
2O
3/ TiO
2The introducing of laminated film, the grid leak electricity of establishment device improves device grid-control ability processed, thereby realizes the preparation of high-performance diamond MIS structure field-effect transistor.
Technical solution of the present invention: diamond metal-insulator-semiconductor structure field-effect transistor, its structure comprise conducting channel, the Au that forms after diamond, the diamond surface hydrogenation, Al
2O
3/ TiO
2Composite dielectric film and grid metal wherein are the conducting channel that forms after the diamond surface hydrogenation on the diamond, and the conducting channel that forms after diamond surface hydrogenation is two Au that are symmetry shape, are Al between the Au that two are symmetry shape
2O
3/ TiO
2Composite dielectric film, Al
2O
3/ TiO
2It is the grid metal on the composite dielectric film.
A kind of method for preparing diamond metal-insulator-semiconductor structure field-effect transistor with the autoxidation method is characterized in that comprising following processing step:
One, the involuntary doped diamond monocrystal material of cleaning is put into MPCVD equipment, under nitrogen atmosphere protection under 500 ℃-700 ℃ the high temperature, carry out surface hydriding and process;
Two, the diamond of processing at surface hydriding utilizes conventional semiconductor technology, obtains the Ohmic electrode figure by positive-glue removing, exposure, development, makes deposited by electron beam evaporation Au, utilizes positive glue lift-off technology to obtain metal ohmic contact;
Three, obtain isolation pattern by positive-glue removing, exposure, development, use the oxygen plasma treatment technology to realize device isolation, remove the photoresist mask with acetone/ethanol;
Four, use conventional photoetching technique, obtain gate figure by positive-glue removing, exposure, development;
Five, by electron beam evaporation equipment evaporation thin layer Al metal, then autoxidation in the nitrogen drying case, and then evaporation Ti metal, autoxidation in the nitrogen drying case then, by repeatedly repeatedly this process obtain high-quality Al
2O
3/ TiO
2The MULTILAYER COMPOSITE oxide film;
Six, utilize electron beam evaporation equipment evaporation grid metal, and obtain metal gate by positive glue lift-off technology; Seven, use conventional photoetching technique, obtain test briquetting figure by positive-glue removing, exposure, development, peel off the Au metal by evaporation and realize the thickening of electrode test regional metal.
The advantage 1 that the present invention has) satisfies the requirement that low grid leak is electric, high transconductance diamond microwave power device is developed; 2) thin layer Al and Ti autoxidation form Al
2O
3/ TiO
2The method of composite dielectric film not only can effectively be protected the conductivity channel layer on diamond surface, also will play the effect that reduces the grid leak electricity; 3) adopt the TiO with high-k
2Material has reduced the impact of dielectric thickness on device transconductance characteristic and frequency characteristic; 4) utilize stripping means to realize the method for medium under the grid, with dielectric material, comprise that high dielectric material is limited in grid with lower area, reduced the parasitic capacitance of grid side medium formation to the impact of device frequency performance; 5) the MIS structure diamond field effect transistor of realizing can obtain low grid leak electricity, the advantages such as high grid operating voltage range.
Description of drawings
Fig. 1 is diamond MIS structure FET device sectional structure chart.
Fig. 2-the 1st, the schematic diagram of acquisition surface conduction channel in the technological process of diamond MIS structure FET device preparation.
Fig. 2-the 2nd utilizes positive glue lift-off technology to obtain the schematic diagram of metal ohmic contact in the technological process of diamond MIS structure FET device preparation.
Fig. 2-the 3rd, the schematic diagram of the oxygen plasma of employing power 50W-100W in the technological process of diamond MIS structure FET device preparation.
Fig. 2-the 4th removes the photoresist mask with acetone/ethanol in the technological process of diamond MIS structure FET device preparation, finishes the schematic diagram of device isolation.
Fig. 2-the 5th uses conventional photoetching technique in the technological process of diamond MIS structure FET device preparation, obtains the schematic diagram of gate figure by positive-glue removing, exposure, development.
Fig. 2-the 6th obtains high-quality Al in the technological process of diamond MIS structure FET device preparation
2O
3/ TiO
2The schematic diagram of MULTILAYER COMPOSITE oxide film.
Fig. 2-the 7th utilizes electron beam evaporation equipment to evaporate the schematic diagram of grid metal in the technological process of diamond MIS structure FET device preparation.
Fig. 2-the 8th passes through the schematic diagram that positive glue lift-off technology obtains the grid metal in the technological process of diamond MIS structure FET device preparation.
Fig. 3 is the as a result figure of the diamond MIS structure FET device gate voltage for preparing of embodiment 1-gate current characteristic test.
Fig. 4 is the as a result figure of the diamond MIS structure FET device transfer characteristic test for preparing of embodiment 1.
Fig. 5 is the as a result figure that embodiment 1 prepares diamond MIS structure FET device frequency characteristic test.
Among the figure 1 is diamond, the 2nd, and the conducting channel that forms after the diamond surface hydrogenation, the 3rd, Au, the 4th, Al
2O
3/ TiO
2Composite dielectric film, the 5th, grid metal, the 6th, photoresist, the 7th, oxygen plasma.
Embodiment
Contrast Fig. 1, the diamond metal-insulator of employing autoxidation method preparation-semiconductor structure FET device, its structure comprises conducting channel 2, the Au that forms after diamond 1, the diamond surface hydrogenation, Al
2O
3/ TiO
2Composite dielectric film 4 and grid metal 5 wherein are the conducting channel 2 that forms after the diamond surface hydrogenation on the diamond 1, and the conducting channel 2 that forms after diamond surface hydrogenation is two Au that are symmetry shape, are Al between the Au that two are symmetry shape
2O
3/ TiO
2Composite dielectric film 4, Al
2O
3/ TiO
2It is grid metal 5 on the composite dielectric film 4.
Described diamond 1 is involuntary doped single crystal diamond backing material, and sheet resistance is greater than 10 M Ω/sq;
The conducting channel 2 that forms after the described diamond surface hydrogenation is the hole conduction channel layer by forming at diamond surface behind the surface hydriding;
Described Au is the device ohmic contact, adopts the Au with high work function as metal ohmic contact, is used as source and the drain electrode of diamond MIS structure field-effect transistor;
Described Al
2O
3/ TiO
2Composite dielectric film 4 is for adopting alternatively vaporised thin layer Al and Ti, by the Al of autoxidation method formation
2O
3/ TiO
2Composite dielectric film as the insulating barrier under the grid in the diamond MIS structure devices, is used for reducing device grid leak electricity, improves the control ability of grid;
Described grid metal 5 is the grid of diamond MIS structure field-effect transistor, is used for the channel current of control device.
Contrast Fig. 2-1 ~ Fig. 2-8, the technological process of diamond MIS structure FET device preparation is:
1) the involuntary doped diamond monocrystal material of cleaning is put into prepared by microwave plasma chemical vapor deposition (MPCVD) equipment, ionization source is 2.45GHz in the equipment, 1.2 kW, in 500 ℃ of-700 ℃ of scopes, the pure hydrogen protection is lower, the surface hydriding that carried out 30 minutes to 1 hour is processed, and obtains surface conduction channel, such as the conducting channel 2 that forms after the diamond surface hydrogenation among Fig. 2-1;
2) utilize conventional semiconductor technology, by positive-glue removing, expose, be developed on the sample and to obtain the Ohmic electrode figure, make deposited by electron beam evaporation Au, Au thickness utilizes positive glue lift-off technology to obtain metal ohmic contact, such as the Au among Fig. 2-2 greater than 50nm;
3) obtain isolation pattern by positive-glue removing, exposure, development, such as the photoresist 6 among Fig. 2-3, adopt the oxygen plasma of power 50W-100W, such as the oxygen plasma 7 among Fig. 2-3, effects on surface is processed, and the time is not less than 2min, removes the photoresist mask with acetone/ethanol, finish device isolation, such as Fig. 2-4;
4) use conventional photoetching technique, obtain gate figure by positive-glue removing, exposure, development, such as Fig. 2-5;
5) evaporate first the thin Al metal of one deck by electron beam evaporation equipment, autoxidation in the nitrogen drying case again, and then the thin Ti metal of evaporation one deck, then autoxidation in the nitrogen drying case, the THICKNESS CONTROL of each separately evaporation Al and Ti is at 1-3nm, after finishing, evaporation is put at once autoxidation in the nitrogen drying case, oxidizing temperature is no more than 90 ℃, each oxidization time was greater than 1 hour, independent evaporation oxidation 2nm Ti metal 2-5 time again after circulation 3-4 time, total evaporated metal THICKNESS CONTROL in 30nm, by repeatedly repeatedly this process obtain high-quality Al
2O
3/ TiO
2The MULTILAYER COMPOSITE oxide film is such as the Al among Fig. 2-6
2O
3/ TiO
2Composite dielectric film 4;
6) utilize electron beam evaporation equipment evaporation grid metal, shown in Fig. 2-7, and by positive glue lift-off technology acquisition grid metal, such as the grid metal 5 among Fig. 2-8;
7) use conventional photoetching technique, obtain test briquetting figure by positive-glue removing, exposure, development, Au realizes the thickening of electrode test regional metal by the evaporation stripping metal;
Embodiment
1) first with the single-crystal diamond backing material (5mm * 5mm * 0.5mm) sample carries out cleaning surfaces, respectively ultrasonic cleaning 5 minutes in acetone and ethanolic solution, nitrogen dries up after the rinsing in deionized water;
2) sample is put into MPCVD equipment, ionization source is 2.45GHz in the equipment, and 1.2 kW protect by pure hydrogen, and the surface hydriding that carried out under 500 ℃ or 600 ℃ or 700 ℃ 40 minutes is processed;
3) with AZ7908 eurymeric photoresist as mask, prepare photoresist layer with the method for rotary coating, even glue revolution is 5000rpm, the even glue time is 20 seconds, photoresist is cured in 150 seconds 110 ℃ of hot plate front bakings after sparing glue; Use mask aligner that required mask pattern is exposed, use the RZX-3038 developer for positive photoresist to develop; After developing 90 ℃ of baking oven post bakes 10 minutes; Depositing metal Au in the electron beam evaporation platform, gross thickness is 120nm; In acetone, soaked 4 hours after deposit is complete, then in acetone/ethanol, carry out respectively 3 minutes ultrasonic processing, use washed with de-ionized water, N
2Dry up the Au among the metal electrode of acquisition such as Fig. 2-2;
4) use AZ7908 eurymeric photoresist as mask, even glue revolution is 5000rpm, and the even glue time is 20 seconds, photoresist is cured in 150 seconds 110 ℃ of hot plate front bakings behind the even glue; Use mask aligner that required mask pattern is exposed, use the RZX-3038 developer for positive photoresist to develop; After developing 90 ℃ of baking oven post bakes 10 minutes; Utilize the plasma adhesive supplier under pure oxygen, to play glue 5 minutes with 100 W power, in acetone/ethanol, carry out respectively 3 minutes ultrasonic processing, use washed with de-ionized water, N
2Dry up;
5) use AZ7908 eurymeric photoresist as mask, even glue revolution is 5000rpm, and the even glue time is 20 seconds, photoresist is cured in 150 seconds 110 ℃ of hot plate front bakings behind the even glue; Use mask aligner that required mask pattern is exposed, use the RZX-3038 developer for positive photoresist to develop; 90 ℃ of baking oven post bakes 10 minutes, obtain the gate figure mask, such as Fig. 2-5 after developing;
6) by electron beam evaporation equipment evaporation thin layer 2nm thin layer Al metal, then put into 22 ℃ of nitrogen drying case autoxidations 2 hours, again evaporate 2nm thin layer Ti metal, put into 22 ℃ of nitrogen drying case autoxidations 2 hours, repeat above step 3 time, and then press the same terms evaporation oxidation 2nm thin layer Ti metal twice, obtain at last high-quality Al
2O
3/ TiO
2The MULTILAYER COMPOSITE oxide film is such as the Al among Fig. 2-6
2O
3/ TiO
2Composite dielectric film 4;
7) evaporate the Al metal of 200 nm by electron beam evaporation equipment, then sample is put into acetone soln and soaked 4 hours, then in acetone/ethanol, carry out respectively 3 minutes ultrasonic processing, use washed with de-ionized water, N
2Dry up the grid metal electrode of acquisition such as the grid metal 5 among Fig. 2-7;
8) use AZ7908 eurymeric photoresist as mask, even glue revolution is 5000rpm, and the even glue time is 20 seconds, photoresist is cured in 150 seconds 110 ℃ of hot plate front bakings behind the even glue; Use mask aligner that required mask pattern is exposed, use the RZX-3038 developer for positive photoresist to develop; 90 ℃ of baking oven post bakes 10 minutes, obtain the test electrode pattern mask after developing;
9) evaporate the Au metal of 300 nm by electron beam evaporation equipment, then sample is put into acetone soln and soaked 4 hours, then in acetone/ethanol, carry out respectively 3 minutes ultrasonic processing, use washed with de-ionized water, N
2Dry up, finish the metal thickening to test electrode.
Through above step, the 1 micron long diamond MIS of grid structure FET device of acquisition, leaking electricity in+3V grid voltage the scope at-3V is lower than 0.5pA, and leaking electricity in+4V grid voltage the scope at-4V is lower than 2pA, as shown in Figure 3.
Device leaks at-5V to be depressed, and leakage current reaches 80 mA/mm under the-6V grid voltage, and mutual conductance has reached 22 mS/mm under-3V grid voltage, as shown in Figure 4.
The current gain cutoff frequencies of device has reached more than the 2GHz, as shown in Figure 5.
Claims (10)
1. diamond metal-insulator-semiconductor structure field-effect transistor is characterized in that comprising conducting channel, the Au that forms after diamond, the diamond surface hydrogenation, Al
2O
3/ TiO
2Composite dielectric film and grid metal wherein are the conducting channel that forms after the diamond surface hydrogenation on the diamond, and the conducting channel that forms after diamond surface hydrogenation is two Au that are symmetry shape, are Al between the Au that two are symmetry shape
2O
3/ TiO
2Composite dielectric film, Al
2O
3/ TiO
2It is the grid metal on the composite dielectric film.
2. hard rock metal-insulator semiconductor structure FET device according to claim 1 is characterized in that described diamond is involuntary doped single crystal diamond backing material, and sheet resistance is greater than 10 M Ω/sq.
3. hard rock metal-insulator semiconductor structure FET device according to claim 1 is characterized in that the conducting channel that forms after the described diamond surface hydrogenation is the hole conduction channel layer by forming at diamond surface behind the surface hydriding; Described Au is the device ohmic contact, adopts the Au with high work function as metal ohmic contact, is used as source and the drain electrode of diamond MIS structure field-effect transistor.
4. diamond metal-insulator according to claim 1-semiconductor structure FET device is characterized in that described Al
2O
3/ TiO
2Composite dielectric film is for adopting alternatively vaporised thin layer Al and Ti, by the Al of autoxidation method formation
2O
3/ TiO
2Composite dielectric film as the insulating barrier under the grid in the diamond MIS structure devices, is used for reducing device grid leak electricity, improves the control ability of grid; Described grid metal is the grid of diamond MIS structure field-effect transistor, is used for the channel current of control device.
5. method that adopts the autoxidation method to prepare diamond metal-insulator-semiconductor structure field-effect transistor is characterized in that the method comprises following processing step:
One, the involuntary doped diamond monocrystal material of cleaning is put into prepared by microwave plasma chemical vapor deposition MPCVD equipment, under 500 ℃-700 ℃ lower nitrogen atmosphere protections, carry out surface hydriding and process, obtain surface conduction channel;
Two, utilize conventional semiconductor technology, by positive-glue removing, expose, be developed on the sample that obtains on the step 1) and to obtain the Ohmic electrode figure, make deposited by electron beam evaporation Au, utilize positive glue lift-off technology to obtain metal ohmic contact;
Three, obtain isolation pattern by positive-glue removing, exposure, development, use the oxygen plasma treatment technology to realize device isolation, remove the photoresist mask with acetone/ethanol;
Four, use conventional photoetching technique, obtain gate figure by positive-glue removing, exposure, development;
Five, by electron beam evaporation equipment evaporation thin layer Al metal, then 1) autoxidation in the nitrogen drying case, and then evaporation Ti metal, 2) autoxidation in the nitrogen drying case, 3) by repeatedly repeatedly this process obtain high-quality Al
2O
3/ TiO
2The MULTILAYER COMPOSITE oxide film;
Six, utilize electron beam evaporation equipment evaporation grid metal, and obtain the grid metal by positive glue lift-off technology;
Seven, use conventional photoetching technique, obtain test briquetting figure by positive-glue removing, exposure, development, Au realizes the thickening of electrode test regional metal by the evaporation stripping metal.
6. a kind of method that adopts the autoxidation method to prepare diamond metal-insulator-semiconductor structure field-effect transistor according to claim 5; it is characterized in that in the described processing step one; used diamond is involuntary doped single crystal material; sheet resistance is greater than 10 M Ω/sq; ionization source is 2.45GHz in the MPCVD equipment, 1.2 kW, and hydrogenation process is in 500 ℃ of-700 ℃ of scopes; the pure hydrogen protection is lower, and the surface hydriding that carried out 30 minutes to 1 hour is processed.
7. a kind of method that adopts the autoxidation method to prepare diamond metal-insulator-semiconductor structure field-effect transistor according to claim 5 is characterized in that the thickness of Au in the described processing step two is greater than 50 nm.
8. a kind of method that adopts the autoxidation method to prepare diamond metal-insulator-semiconductor structure field-effect transistor according to claim 5, it is characterized in that adopting in the described processing step three the oxygen plasma effects on surface of power 50W-100W to process, the time is not less than 2min.
9. a kind of method that adopts the autoxidation method to prepare diamond metal-insulator-semiconductor structure field-effect transistor according to claim 5, it is characterized in that in the described processing step five, the THICKNESS CONTROL of each separately evaporation Al and Ti is at 1-3nm, after finishing, evaporation is put at once autoxidation in the nitrogen drying case, oxidizing temperature is no more than 90 ℃, each oxidization time was greater than 1 hour, circulation 3-4 time, and then independent Ti metal 2-5 time of evaporation oxidation 2nm, total evaporated metal THICKNESS CONTROL is in 30nm.
10.1 a kind of method that adopts the autoxidation method to prepare diamond metal-insulator-semiconductor structure field-effect transistor according to claim 5, it is characterized in that the grid metal adopts high resistivity Al, Au, Ti/Au or Ti/Al metal in the described processing step six, the metal gross thickness is greater than 100 nm.
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| CN103280394A (en) * | 2013-05-17 | 2013-09-04 | 中国电子科技集团公司第十三研究所 | Method for manufacturing stable high temperature-resistant hydrogen end group conducting channel on diamond surface |
| CN103280395A (en) * | 2013-05-17 | 2013-09-04 | 中国电子科技集团公司第十三研究所 | Thermal annealing method for manufacturing hydrogen end group conducting channel on diamond face |
| CN104752494A (en) * | 2015-03-20 | 2015-07-01 | 王宏兴 | Diamond material ohmic contact electrode and preparation method and application thereof |
| CN107104141A (en) * | 2017-05-11 | 2017-08-29 | 西安交通大学 | Buddha's warrior attendant ground mass backgate type hydrogen terminal field-effect transistor and preparation method thereof |
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| CN103280395B (en) * | 2013-05-17 | 2015-07-08 | 中国电子科技集团公司第十三研究所 | Thermal annealing method for manufacturing hydrogen end group conducting channel on diamond face |
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| CN103280394A (en) * | 2013-05-17 | 2013-09-04 | 中国电子科技集团公司第十三研究所 | Method for manufacturing stable high temperature-resistant hydrogen end group conducting channel on diamond surface |
| CN104752494B (en) * | 2015-03-20 | 2018-05-04 | 王宏兴 | Diamond Ohm contact electrode and its preparation method and application |
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| CN107104141A (en) * | 2017-05-11 | 2017-08-29 | 西安交通大学 | Buddha's warrior attendant ground mass backgate type hydrogen terminal field-effect transistor and preparation method thereof |
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