CN109378312A - A kind of body doped diamond base normally-off field effect transistor and preparation method thereof - Google Patents
A kind of body doped diamond base normally-off field effect transistor and preparation method thereof Download PDFInfo
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- CN109378312A CN109378312A CN201811074396.9A CN201811074396A CN109378312A CN 109378312 A CN109378312 A CN 109378312A CN 201811074396 A CN201811074396 A CN 201811074396A CN 109378312 A CN109378312 A CN 109378312A
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 201
- 239000010432 diamond Substances 0.000 title claims abstract description 201
- 238000002360 preparation method Methods 0.000 title claims abstract description 27
- 238000002353 field-effect transistor method Methods 0.000 title description 4
- 239000013078 crystal Substances 0.000 claims abstract description 125
- 230000004888 barrier function Effects 0.000 claims abstract description 37
- 230000005669 field effect Effects 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 30
- 229910052751 metal Inorganic materials 0.000 claims description 48
- 239000002184 metal Substances 0.000 claims description 48
- 239000000126 substance Substances 0.000 claims description 27
- 238000000151 deposition Methods 0.000 claims description 25
- 238000001259 photo etching Methods 0.000 claims description 24
- 238000005516 engineering process Methods 0.000 claims description 22
- 229910052737 gold Inorganic materials 0.000 claims description 22
- 239000010931 gold Substances 0.000 claims description 22
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
- 238000001312 dry etching Methods 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 13
- 229910052763 palladium Inorganic materials 0.000 claims description 12
- 238000001069 Raman spectroscopy Methods 0.000 claims description 11
- 230000003746 surface roughness Effects 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 238000010891 electric arc Methods 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 8
- 229910052741 iridium Inorganic materials 0.000 claims description 7
- 238000001020 plasma etching Methods 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052726 zirconium Inorganic materials 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- 238000001657 homoepitaxy Methods 0.000 claims description 4
- 238000013508 migration Methods 0.000 claims description 4
- 230000005012 migration Effects 0.000 claims description 4
- 239000004575 stone Substances 0.000 claims description 4
- 238000000407 epitaxy Methods 0.000 claims description 3
- 239000007792 gaseous phase Substances 0.000 claims 1
- 239000012071 phase Substances 0.000 claims 1
- 230000003471 anti-radiation Effects 0.000 abstract description 4
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 76
- 229920002120 photoresistant polymer Polymers 0.000 description 60
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 40
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 30
- 238000004528 spin coating Methods 0.000 description 30
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 20
- 238000009616 inductively coupled plasma Methods 0.000 description 20
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- 238000004140 cleaning Methods 0.000 description 12
- 230000008021 deposition Effects 0.000 description 12
- 238000005566 electron beam evaporation Methods 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 238000002604 ultrasonography Methods 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 229910052774 Proactinium Inorganic materials 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 241001012508 Carpiodes cyprinus Species 0.000 description 7
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 239000011435 rock Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 241001354791 Baliga Species 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
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- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
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- 238000004519 manufacturing process Methods 0.000 description 1
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- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
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- 238000005036 potential barrier Methods 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/095—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1602—Diamond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
- H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66045—Field-effect transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
- H01L29/8126—Thin film MESFET's
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- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a kind of body doped diamond base normally-off field effect transistors and preparation method thereof, include diamond substrate；Diamond substrate is equipped with one layer of single-crystal diamond epitaxial film；Body doped single crystal epitaxial film and etch areas are provided on single-crystal diamond epitaxial film, etch areas is high Schottky barrier terminal；Channel region is provided on body doped single crystal epitaxial film；Channel region includes body doped single crystal epitaxial film as conducting channel, and is low Schottky barrier terminal；Source electrode and drain electrode is in the two sides of channel region；Gate electrode is set on etch areas and channel region between source electrode and drain electrode.The present invention is normally-off field effect transistor, is used using body doped epitaxial single crystal diamond material as conducting channel, and diamond high temperature resistant, anti-radiation and can be in the evil summary advantages such as environmental work can be played.
Description
Technical field
The invention belongs to technical field of semiconductor device, in particular to a kind of normally-off diamond base field-effect transistor and
A kind of preparation method, and in particular to body doped diamond base normally-off field effect transistor and preparation method thereof.
Background technique
The semiconductor single crystal material development after four generations.First generation Si, Ge semiconductor has brought the mankind into the information age,
The intelligentize and informatization of electronic system has also been driven simultaneously.Second generation semiconductor (GaAs, InP, MCT etc.) brings light for us
Electrical part, power electronic device, radio frequency electronics and space Flouride-resistani acid phesphatase device etc. have caused the letter such as wireless communication, optic communication
The revolution in breath field.Third generation wide bandgap semiconductor (GaN, SiC) can partially meet electronic system of new generation to semiconductor device
Part is in high frequency (microwave-millimeter wave), high-power output, high temperature (300-600 DEG C)；Short wavelength's (blue, green, ultraviolet, deep ultraviolet) resists
The requirement of irradiation, anti-adverse environment etc..
However, in contrast, as shown in Figure 1, diamond no matter from ultra-wide forbidden bandwidth, carrier mobility, thermal conductivity,
Several aspect performances such as anti-disruptive field intensity, dielectric constant and full, anti-radiation, corrosion-resistant and electron drift velocity surmount other comprehensively
Semiconductor also possesses the quality factors such as highest Johnson, Keyes and Baliga, and as shown in table 1, table 1 is diamond
Index is compared with Si, GaN, SiC；The application field for maximally covering output power and working frequency simultaneously, is particularly suitable for
Hyperfrequency, super high power, high temperature resistant, anti-radiation electronic device are prepared, more importantly for the intrinsic characteristic of its physics,
It has same diamond lattic structure with silicon, and is all element semiconductor.Therefore, to material volume, weight, heat dissipation, function
There is huge application potential in the fields such as the very high space flight and aviation of rate density, reliability requirement, Advanced Equipment.
Table 1, diamond index are compared with Si, GaN, SiC
It is demonstrated experimentally that electronics transfer in hydrogen terminal end surface diamond valence band is minimum into binding molecule not to occupy molecule rail
On road (LOMO), causes diamond surface to form one layer of two-dimensional hole gas (2DHG), 10 can be obtained13cm-2The face current-carrying of left and right
Sub- concentration and 50-200cm2·V-1·s-1Carrier mobility in range.Buddha's warrior attendant ground mass normally-off field effect transistor is big
It is mostly used using the surface conductive layer as conducting channel, however the conductive layer is easy under hot environment or oxygen atmosphere
It degenerates or fails, the evils such as diamond high temperature resistant, anticorrosive can not be played completely and omit the advantage to work under environment.Diamond
The field effect transistor overwhelming majority is open type, that is, depletion device, however, normally-off, that is, enhancement device is in circuit application
Also possess very important status.Normally closed device in the case where grid voltage is not added, no matter add before breakdown by source and drain both ends
Big voltage does not have electric current and passes through, and device is in an off state.Therefore, such device can greatly improve the peace of whole system
Quan Xing, while significantly reducing circuit loss.
Summary of the invention
The purpose of the present invention is to provide a kind of body doped diamond base normally-off field effect transistor and preparation method thereof,
To solve above-mentioned technical problem.Body doped diamond base normally-off field effect transistor of the invention, utilizes etched area
High Schottky barrier and channel region surface that domain side wall and gate metal generate and the Schottky barrier that gate metal generates are total
Same-action leads to carrier is completely depleted (in channel) under grid conducting channel pinch off, device is made to show normally-off characteristic；It is logical
It crosses and conducting channel is made using the two-dimensional hole gas of body doped diamond substitution hydrogen terminal diamond, be able to solve two-dimensional hole gas and exist
The problem of high temperature or oxygen atmosphere lower channel electric property degenerate or even disappear, while also can be improved the disruptive field intensity of transistor
With the electrology characteristics such as current density.
In order to achieve the above objectives, the invention adopts the following technical scheme:
A kind of body doped diamond base normally-off field effect transistor, comprising: diamond substrate, single-crystal diamond extension are thin
Film, body doped single crystal epitaxial film, etch areas, channel region, source electrode, drain electrode and gate electrode；It is set in diamond substrate
There is one layer of single-crystal diamond epitaxial film；Body doped single crystal epitaxial film and etched area are set on single-crystal diamond epitaxial film
Domain；Channel region and etch areas are provided on body doped single crystal epitaxial film；Etch areas is high Schottky barrier terminal, ditch
Road region is low Schottky barrier terminal；Channel region includes body doped single crystal epitaxial film, and carrier can be in channel region
Interior migration；Body doped single crystal epitaxial film is the single crystal diamond material of Chemical Vapor-Phase Epitaxy doping or ion implantation doping；Source
Electrode and drain electrode are set to the both ends of channel region；Etch areas and ditch between source electrode and drain electrode is arranged in gate electrode
On road region, and gate electrode is arranged in the etch areas of single-crystal diamond epitaxial film simultaneously.
Further, single-crystal diamond epitaxial film is the diamond of chemical vapor epitaxy, and resistivity is greater than
100M Ω cm, rms surface roughness are less than 0.5nm, and Raman curve half-peak breadth is less than 2cm-1, XRD rocking curve half-peak breadth
Less than 30arcsec.
Further, body doped single crystal epitaxial film is the single crystal diamond of Chemical Vapor-Phase Epitaxy doping or ion implantation doping
Stone material；Body doped single crystal epitaxial film is microwave plasma chemical vapour phase epitaxy, Hot Filament Chemical Vapor extension or electric arc
The single crystal diamond material of discharge chemistry vapour phase epitaxy doping；Doping type is N-shaped or p-type, impurity concentration 1016-
1021cm-3, carrier concentration 1016-1021cm-3, carrier mobility 20-2000cm2/V·s。
Further, the width of the channel region on body doped single crystal epitaxial film is 5nm-10 μm, number 1-500
It is a；The width of etch areas is 5nm-10 μm on body doped single crystal epitaxial film, and length is 1 μm of -1mm；Etch areas and metal
The schottky barrier height of formation is greater than 1eV；Etch areas is formed by dry etching, dry etching ICP, RIE, IBE or
FIB。
Further, source electrode or the material of drain electrode are Au, Pd, Ir, Pt or Ti；The material of gate electrode be Al, Zr or
Mo forms high Schottky barrier with etch areas, forms low Schottky barrier with channel region.
Further, the channel region 5 on body doped single crystal epitaxial film 3 and the setting of the interval of etch areas 4.
A kind of preparation method of body doped diamond base normally-off field effect transistor, includes the following steps:
Step 1, diamond substrate is cleaned, and dried up；
Step 2, homoepitaxy monocrystalline diamond film on a diamond substrate obtains single-crystal diamond epitaxial film；
Step 3, the doped epitaxial on single-crystal diamond epitaxial film obtains body on single-crystal diamond epitaxial film surface and mixes
Miscellaneous single crystal epitaxial film；
Step 4, body doped single crystal epitaxial film is cleaned, then makes etching structure figure on its surface using photoetching technique
Etching structure is transferred on single-crystal diamond epitaxial film by shape using dry etching technology, forms etch areas and channel region
Domain, etch areas are high Schottky barrier terminal, and channel region is low Schottky barrier terminal；
Step 5, using photoetching technique channel region both ends formed source, drain electrode patterns, sedimentary origin, drain metal,
And source electrode and drain electrode Ohmic contact is obtained using lift-off technology；
Step 6, gate electrode figure, depositing gate electrode gold are formed in etch areas and channel region using photoetching technique
Belong to, obtains gate electrode Schottky contacts using lift-off technology.
Further, the single-crystal diamond epitaxial film that step 2 obtains is CVD growth diamond, and resistivity is greater than
100M Ω cm, rms surface roughness are less than 0.5nm, and Raman curve half-peak breadth is less than 2cm-1, XRD rocking curve half-peak breadth
Less than 30arcsec.
Further, the body doped single crystal epitaxial film that step 3 obtains is microwave plasma chemical vapour phase epitaxy, heated filament
The monocrystalline gold of Chemical Vapor-Phase Epitaxy, the single crystal diamond material of arc discharge Chemical Vapor-Phase Epitaxy doping or ion implantation doping
Hard rock material, doping type are N-shaped or p-type, impurity concentration 1016-1021cm-3, carrier concentration 1016-1021cm-3,
Carrier mobility is 20-2000cm2/V·s。
Further, the width of etch areas is 5nm-10 μm on the body doped single crystal epitaxial film formed in step 4, long
Degree is 1 μm of -1mm, is greater than 1eV with the schottky barrier height that metal is formed, etch areas is formed by dry etching, dry etching
Including ICP, RIE, IBE or FIB；Channel region and metal are formed compared with low Schottky barrier, and the width of channel region is 5nm-10 μ
M, number are 1-500；The source-drain electrode metal deposited in step 5 is Au, Pd, Ir, Pt or Ti；The grid electricity deposited in step 6
Pole metal is Al, Zr or Mo.
Compared with prior art, the invention has the following advantages:
Body doped diamond base normally-off field effect transistor of the invention, has used body doped single crystal epitaxial film first
Hydrogen terminal diamond two-dimensional hole gas is substituted as conducting channel, is able to solve hydrogen terminal end surface channel in high temperature or oxygen gas
The problem of conductivity and carrier concentration, mobil-ity degradation even fail under atmosphere, by diamond in high temperature resistant, anticorrosive etc.
The advantage to work under slightly environment is disliked to display.Secondly, etch areas side wall contacts to form higher Schottky barrier with metal,
Possess stronger carrier depletion ability, can produce broader space-charge region, the schottky junctions generated in conjunction with channel region surface
Tactile space charged region can be jointly completely depleted by body doped diamond channel carriers, causes conducting channel by pinch off, makes crystalline substance
Body tube device shows normally-off characteristic.Etch areas may include the terminals such as oxygen, fluorine, nitrogen, generate higher Schottky gesture with metal
Height is built, carrier cannot migrate in it；Channel region occlusion body doped single crystal epitaxial film conductive layer, carrier can be at it
Interior migration.
Further, body doped single crystal epitaxial film is microwave plasma chemical vapour phase epitaxy (MPCVD), hot-wire chemical
Vapour phase epitaxy (HFCVD), arc discharge Chemical Vapor-Phase Epitaxy (Arcdischarge-CVD) doping single crystal diamond material or
The single crystal diamond material of person's ion implantation doping, doping type can be N-shaped (element dopings such as phosphorus, nitrogen) or p-type (boron,
The element dopings such as aluminium), impurity concentration 1016-1021cm-3, carrier concentration 1016-1021cm-3, carrier mobility 20-
2000cm2/V·s.MPCVD doped epitaxial can obtain the single crystal diamond material of better quality, and HFCVD doped epitaxial can
The bigger single crystal diamond material of area is obtained, electric arc CVD doped epitaxial can obtain bigger growth rate.
Further, source electrode and drain electrode be easily with diamond formed Ohmic contact metal, as Au, Pd, Ir, Pt,
Ti etc.；Gate electrode is easily to form Schottky contacts with diamond, forms higher schottky barrier height with etch areas side wall
Metal, such as Al, Zr, Mo.
Preparation method of the invention is able to solve hydrogen terminal Two-Dimensional Hole gas channel and degenerates, loses under high temperature, oxygen atmosphere
The problem of effect, larger brings diamond high temperature resistant, anticorrosive, the resistance to advantage for disliking slightly environment into play.It realizes simultaneously normal
Pass type diamond field effect transistor guarantees that its working characteristics under high temperature, evil slightly environment is not degenerated.
Detailed description of the invention
Fig. 1 is a kind of cross section structure schematic diagram of body doped diamond base normally-off field effect transistor of the invention；
Fig. 2 is a kind of process signal of the preparation method of body doped diamond base normally-off field effect transistor of the invention
Figure.
In fig. 1 and 2, diamond substrate 1；Single-crystal diamond epitaxial film 2；Body doped single crystal epitaxial film 3；Etching
Region 4；Channel region 5；Source electrode 6；Drain electrode 7；Gate electrode 8.
Specific embodiment
Invention is further described in detail in the following with reference to the drawings and specific embodiments.
Referring to Fig. 1, a kind of body doped diamond base normally-off field effect transistor of the invention, includes diamond substrate
1, single-crystal diamond epitaxial film 2, body doped single crystal epitaxial film 3, etch areas 4, channel region 5, source electrode 6, drain electrode 7
With gate electrode 8.
Diamond substrate 1 is equipped with one layer of single-crystal diamond epitaxial film 2；It is provided on single-crystal diamond epitaxial film 2
Body doped single crystal epitaxial film 3 and etch areas 4, etch areas 4 are high Schottky barrier terminal, 4 carriers of etch areas
It can not transmit.Channel region 5 and etch areas 4, and etch areas 4 and channel are provided on body doped single crystal epitaxial film 3
5 arranged for interval of region.Channel region 5 includes that body doped single crystal epitaxial film 3 is used as conducting channel, and carrier can be in channel region
Migration in the channel in domain 5, and channel region 5 is low Schottky barrier terminal；Source electrode 6 and drain electrode 7 are in channel region 5
Two sides；Gate electrode 8 is set on etch areas 4 and channel region 5 between source electrode 6 and drain electrode 7, and gate electrode 8 is arranged simultaneously
In the etch areas 4 of single-crystal diamond epitaxial film 2.
Diamond substrate 1 is using high temperature and pressure HPHT technology, large area splicing, the preparation of vapour phase epitaxy CVD technology
It obtains, as substrate, homoepitaxy monocrystalline diamond film on it.
Single-crystal diamond epitaxial film 2 is intrinsic diamond material, is prepared using CVD technology extension, resistivity is greater than
100M Ω cm, root mean square rms surface roughness are less than 0.5nm, and Raman curve half-peak breadth is less than 2cm-1, XRD rocking curve half
Peak width is less than 30arcsec.
Body doped single crystal epitaxial film 3 is microwave plasma chemical vapour phase epitaxy (MPCVD), Hot Filament Chemical Vapor extension
(HFCVD), the single crystal diamond material of arc discharge Chemical Vapor-Phase Epitaxy (Arcdischarge-CVD) doping or ion note
Enter the single crystal diamond material of doping, doping type can be N-shaped (element dopings such as phosphorus, nitrogen) or the p-type (elements such as boron, aluminium
Doping), impurity concentration 1016-1021cm-3, carrier concentration 1016-1021cm-3, carrier mobility 20-2000cm2/
V·s.The width of etch areas 4 is 5nm-10 μm on body doped single crystal epitaxial film 3, and length is 1 μm of -1mm, is formed with metal
Schottky barrier height be greater than 1eV, etch areas 4 formed by dry etching, and dry etching includes ICP, RIE, IBE or FIB.
Channel region 5 contains body doped single crystal epitaxial film 3 and is used as transistor conductivity channel, and width is 5nm-10 μm, and number is
1-500.Source electrode 6 and the material of drain electrode 7 are Au, Pd, Ir, Pt or Ti；The material of gate electrode 8 is to be capable of forming Gao Xiaote
The metal of base potential barrier, including Al, Zr and Mo.Channel region 5 and etch areas 4 in body doped single crystal epitaxial film 3 are more
When a, channel region 5 and the setting of the interval of etch areas 4.When the quantity of channel region 5 is 1, body doped single crystal epitaxial film 3
5 two sides of channel region are disposed as etch areas 4；When the quantity of etch areas 4 is 1, by body doped single crystal epitaxial film 3
It is divided into two parts, guarantees that there are etch areas 4 in the two sides of each multichannel channel region 5, it is ensured that can work normally.
Body doped diamond base normally-off field effect transistor of the invention, the field effect transistor include Buddha's warrior attendant stone lining
Bottom, single-crystal diamond epitaxial film, body doped single crystal epitaxial film, etch areas, channel region, source electrode, drain electrode and grid
Electrode；Diamond substrate is equipped with one layer of single-crystal diamond epitaxial film；Body doping is provided on single-crystal diamond epitaxial film
Single crystal epitaxial film and etch areas, etch areas are high Schottky barrier terminal, and etch areas carriers can not transmit；
Etch areas and channel region are provided on body doped single crystal epitaxial film；Channel region includes that body doped single crystal epitaxial film is made
For conducting channel, carrier can migrate in channel region, and channel region is low Schottky barrier terminal；Etch areas with
The setting of channel region interval；Source electrode and drain electrode is in the two sides of channel region；Etch areas between source electrode and drain electrode
And gate electrode is set on channel region.The present invention utilizes body doped epitaxial single crystal diamond using the structure of body doping interval etching
Stone material is used as conducting channel, plays the advantages such as diamond high temperature resistant, anti-radiation, evil slightly environmental work；Utilize body
The high Schottky barrier and channel region that doped single crystal epitaxial film etch areas side wall and metal are formed form low with metal
The space-charge region that Schottky barrier generates conducting channel pinch off is realized into normally-off field effect transistor.
Referring to Fig. 2, a kind of body doped diamond base normally-off field effect transistor tube preparation method of the invention, according to
Lower step successively carries out:
Step 1, diamond substrate 1 is cleaned, and dried up.
Step 2, homoepitaxy monocrystalline diamond film on a diamond substrate obtains single-crystal diamond epitaxial film 2；It obtains
The single-crystal diamond epitaxial film obtained is CVD growth diamond, and resistivity is greater than 100M Ω cm, and rms surface is coarse
Degree is less than 0.5nm, and Raman curve half-peak breadth is less than 2cm-1, XRD rocking curve half-peak breadth is less than 30arcsec.
Step 3, doped epitaxial obtains body doped single crystal epitaxial film 3 on single-crystal diamond epitaxial film 2；The body of acquisition
Doped single crystal epitaxial film is microwave plasma chemical vapour phase epitaxy (MPCVD), Hot Filament Chemical Vapor extension (HFCVD), electricity
The single crystal diamond material of arc discharge Chemical Vapor-Phase Epitaxy (Arcdischarge-CVD) doping or the list of ion implantation doping
Diamond material, doping type can be N-shaped (element dopings such as phosphorus, nitrogen) or p-type (element dopings such as boron, aluminium), impurity
Concentration is 1016-1021cm-3, carrier concentration 1016-1021cm-3, carrier mobility 20-2000cm2/V·s。
Step 4, to the single-crystal diamond sample clean after doping, then utilize photoetching technique in its surface production room every quarter
The structure is transferred on diamond thin by arbor figure using dry etching technology, forms etch areas 4 and channel region
5, etch areas 4 is high Schottky barrier terminal, and channel region 5 is low Schottky barrier terminal；Form the width of etch areas
It is 5nm-10 μm, length is 1 μm of -1mm, is greater than 1eV with the schottky barrier height that metal is formed, etch areas is by dry etching
It is formed, dry etching includes ICP, RIE, IBE or FIB；Channel region and metal are formed compared with low Schottky barrier, channel region
Width is 5nm-10 μm, and number is 1-500.
Step 5, using photoetching technique channel region both ends formed source-drain electrode figure, sedimentary origin drain metal, and
Source electrode 6 and 7 Ohmic contact of drain electrode are obtained using lift-off technology；The source-drain electrode metal of deposition is Au, Pd, Ir, Pt or Ti.
Step 6, gate electrode figure, depositing gate electrode gold are formed in etch areas and channel region using photoetching technique
Belong to, obtains 8 Schottky contacts of gate electrode using lift-off technology；The gate electrode metal of deposition is Al, Zr or Mo.
Wherein, the photoetching technique in step 4 to step 6 is ultraviolet photolithographic, electron beam lithography or step-by-step movement non-contact photolithography；
Dry etching technology includes inductively coupled plasma etching, reactive ion etching, ion beam etching grade focused-ion-beam lithography
Etc. forms；Deposited metal mode is thermal evaporation, electron beam evaporation, sputtering or atomic layer deposition.
One layer of single-crystal diamond epitaxial film is arranged in preparation method of the invention on a diamond substrate；Single-crystal diamond
Body doped single crystal epitaxial film and etch areas are set on epitaxial film；Etch areas is high Schottky barrier terminal, etched area
Domain carriers can not transmit；Etch areas and channel region are set on body doped single crystal epitaxial film；Channel region includes
Body doped single crystal epitaxial film can be migrated as conducting channel, carrier in channel region, and channel region is low Xiao Te
Base barrier terminal；Etch areas and the setting of channel region interval；Source electrode and drain electrode is set to the two sides of channel region；Grid electricity
Pole is set in the etch areas and channel region between source electrode and drain electrode, and gate electrode is set to single-crystal diamond simultaneously
In the etch areas of epitaxial film.The transistor device of method preparation of the invention can obtain normally closed device characteristic, simultaneously
Solve the problems, such as performance degradation or failure of the hydrogen terminal Two-Dimensional Hole gas channel under high temperature and oxygen atmosphere.
Embodiment 1
A kind of body doped diamond base normally-off field effect transistor tube preparation method, comprises the following steps:
1) successive using diamond substrate 1 of the diamond substrate standard cleaning technique to high temperature and pressure (HPHT) technology growth
Inorganic, organic washing is carried out, is dried with nitrogen spare.
2) single using being deposited in the diamond substrate of microwave plasma chemical vapor deposition (MPCVD) technology after cleaning
Diamond film 2, plasma power 1kW, chamber pressure 100Torr, total gas couette 500sccm, obtained list
Diamond film thickness is 1 μm, and resistivity is greater than 100M Ω cm, and rms surface roughness is less than 0.5nm, Raman curve
Half-peak breadth is less than 2cm-1, XRD rocking curve half-peak breadth is less than 30arcsec.
3) diamond sample is kept in MPCVD chamber, opens solid boron source, and microwave plasma power is 800W, hydrogen
Throughput 80sccm, chamber pressure 200Torr, epitaxial growth 3 hours, obtained doped diamond thin films carried with a thickness of 0.2 μm
Flowing sub- concentration is 1020cm-3, mobility 50cm2/V·s。
4) it is cleaned by ultrasonic sample using acetone, isopropanol, deionized water, and dries up；By one layer of sample surfaces spin coating
AZ5214 photoresist toasts the single-crystal diamond sample of the good photoresist of spin coating 90 seconds under the conditions of 95 DEG C, and use is designed
Mask plate carries out ultraviolet photolithographic and exposes 4s, and development 30s removes the photoresist being exposed, leaves the figure in the region that is etched.It will protect
The photoresist stayed post bake 120s under the conditions of 120 DEG C.The good sample of photoetching is placed in inductively coupled plasma body (ICP) to carve
In erosion machine sample room, sample room base vacuum is evacuated to 5 × 10-2After Torr, sample is sent in main cavity, is passed through 30sccm's
Oxygen, the argon gas of 5sccm, ICP radio-frequency power are set as 500W, and dc power is set as 100W, etch 120s.Taking-up has etched
At diamond sample, immersion washes away photoresist for 20 minutes in acetone, obtains under etch areas 4 and photoresist protection zone
Channel region 5.
5) it is cleaned by ultrasonic sample using acetone, isopropanol, deionized water, and dries up；By one layer of sample surfaces spin coating
AZ5214 photoresist toasts the single-crystal diamond sample of the good photoresist of spin coating 90 seconds under the conditions of 95 DEG C, and use is designed
Mask plate carries out ultraviolet photolithographic and exposes 4s, and development 30s removes the photoresist being exposed, leaves source-drain electrode figure.Photoetching is good
Sample be placed in electron beam evaporation equipment, base vacuum is evacuated to 5 × 10-4After Pa, Pd, Au two is sequentially depositing in sample surfaces
Layer metal, each 50,500nm.The diamond sample that deposition is completed is taken out, is immersed in N-Methyl pyrrolidone (NMP) solution, and
120 DEG C water-bath 5 minutes, then ultrasound peels off metal other than exposure area and obtains source electrode 6 and drain electrode 7.
6) it is cleaned by ultrasonic sample using acetone, isopropanol, deionized water, and dries up.By one layer of sample surfaces spin coating
AZ5214 photoresist toasts the single-crystal diamond sample of the good photoresist of spin coating 90 seconds under the conditions of 95 DEG C, and use is designed
Mask plate carries out ultraviolet photolithographic and exposes 4s, and development 30s removes the photoresist being exposed, leaves gate electrode figure.Photoetching is good
Sample is placed in electron beam evaporation equipment, and base vacuum is evacuated to 5 × 10-4After Pa, Al, Au metal are sequentially depositing in sample surfaces
50,300nm.The diamond sample that deposition is completed is taken out, is immersed in N-Methyl pyrrolidone (NMP) solution, and 120 DEG C of water-baths
5 minutes, then ultrasound peeled off the metal other than exposure area and obtains gate electrode 8, the final Buddha's warrior attendant ground mass for obtaining preparation and completing
Double hyer insulation gate medium field effect transistor.
Embodiment 2
A kind of body doped diamond base normally-off field effect transistor tube preparation method, comprises the following steps:
1) successive using diamond substrate 1 of the diamond substrate standard cleaning technique to high temperature and pressure (HPHT) technology growth
Inorganic, organic washing is carried out, is dried with nitrogen spare.
2) single using being deposited in the diamond substrate of microwave plasma chemical vapor deposition (MPCVD) technology after cleaning
Diamond film 2, plasma power 1kW, chamber pressure 100Torr, total gas couette 500sccm, obtained list
Diamond film thickness is 1 μm, and resistivity is greater than 100M Ω cm, and rms surface roughness is less than 0.5nm, Raman curve
Half-peak breadth is less than 2cm-1, XRD rocking curve half-peak breadth is less than 30arcsec.
3) diamond sample takes out as in direct-current arc CVD chamber, and microwave plasma power is 10kW, underlayer temperature
1000 DEG C, total gas couette 6000sccm, chamber pressure 35Torr, epitaxial growth 1 hour, obtained doped diamond thin films were thick
Degree is 4 μm, carrier concentration 1021cm-3, mobility 50cm2/V·s。
4) it is cleaned by ultrasonic sample using acetone, isopropanol, deionized water, and dries up；By one layer of sample surfaces spin coating
The single-crystal diamond sample of the good photoresist of spin coating is toasted 90 seconds under the conditions of 95 DEG C, uses design by KXN5735-LO photoresist
Good mask plate carries out ultraviolet photolithographic and exposes 2s, and development 25s removes the photoresist not being exposed, leaves the figure in the region that is etched
Shape.By the photoresist remained under the conditions of 120 DEG C post bake 120s.The good sample of photoetching is placed in inductively coupled plasma body
(ICP) in etching machine sample room, sample room base vacuum is evacuated to 5 × 10-2After Torr, sample is sent in main cavity, is passed through
The oxygen of 30sccm, the argon gas of 5sccm, ICP radio-frequency power are set as 500W, and dc power is set as 100W, etch 120s.It takes
The diamond sample of completion is etched out, and immersion washes away photoresist for 20 minutes in acetone, obtains etch areas 4 and photoresist is protected
Protect the channel region 5 under region.
5) it is cleaned by ultrasonic sample using acetone, isopropanol, deionized water, and dries up；By one layer of sample surfaces spin coating
The single-crystal diamond sample of the good photoresist of spin coating is toasted 90 seconds under the conditions of 95 DEG C, uses design by KXN5735-LO photoresist
Good mask plate carries out ultraviolet photolithographic and exposes 2s, and development 25s removes the photoresist not being exposed, leaves source-drain electrode figure.It will
The good sample of photoetching is placed in electron beam evaporation equipment, and base vacuum is evacuated to 5 × 10-4After Pa, it is sequentially depositing in sample surfaces
Pd, Au double layer of metal, each 50,500nm.The diamond sample that deposition is completed is taken out, it is molten to be immersed in N-Methyl pyrrolidone (NMP)
In liquid, and 120 DEG C water-bath 5 minutes, then ultrasound peels off metal other than exposure area and obtains source electrode 6 and drain electrode 7.
6) it is cleaned by ultrasonic sample using acetone, isopropanol, deionized water, and dries up.By one layer of sample surfaces spin coating
The single-crystal diamond sample of the good photoresist of spin coating is toasted 90 seconds under the conditions of 95 DEG C, uses design by KXN5735-LO photoresist
Good mask plate carries out ultraviolet photolithographic and exposes 2s, and development 25s removes the photoresist not being exposed, leaves gate electrode figure.By light
The sample carved is placed in electron beam evaporation equipment, and base vacuum is evacuated to 5 × 10-4After Pa, sample surfaces be sequentially depositing Al,
Au metal 50,300nm.The diamond sample that deposition is completed is taken out, is immersed in N-Methyl pyrrolidone (NMP) solution, and 120
DEG C water-bath 5 minutes, then ultrasound peeled off the metal other than exposure area and obtains gate electrode 8, the final gold for obtaining preparation and completing
Hard rock base double hyer insulation gate medium field effect transistor.
Embodiment 3
A kind of body doped diamond base normally-off field effect transistor tube preparation method, comprises the following steps:
1) successive using diamond substrate 1 of the diamond substrate standard cleaning technique to high temperature and pressure (HPHT) technology growth
Inorganic, organic washing is carried out, is dried with nitrogen spare.
2) single using being deposited in the diamond substrate of microwave plasma chemical vapor deposition (MPCVD) technology after cleaning
Diamond film 2, plasma power 1kW, chamber pressure 100Torr, total gas couette 500sccm, obtained list
Diamond film thickness is 1 μm, and resistivity is greater than 100M Ω cm, and rms surface roughness is less than 0.5nm, Raman curve
Half-peak breadth is less than 2cm-1, XRD rocking curve half-peak breadth is less than 30arcsec.
3) diamond sample takes out as in HFCVD chamber, boron oxide (B2O3) be dissolved in alcohol and being passed through with hydrogen as carrier gas
Cavity, tantanum filament electric current 50A, hydrogen flowing quantity 200sccm, 900 DEG C of underlayer temperature, chamber pressure 20Torr, epitaxial growth 1 is small
When, obtained doped diamond thin films are with a thickness of 3 μm, carrier concentration 1020cm-3, mobility 80cm2/V·s。
4) it is cleaned by ultrasonic sample using acetone, isopropanol, deionized water, and dries up；By one layer of sample surfaces spin coating
AZ5214 photoresist toasts the single-crystal diamond sample of the good photoresist of spin coating 90 seconds under the conditions of 95 DEG C, and use is designed
Mask plate carries out ultraviolet photolithographic and exposes 4s, and development 30s removes the photoresist being exposed, leaves the figure in the region that is etched.It will protect
The photoresist stayed post bake 120s under the conditions of 120 DEG C.The good sample of photoetching is placed in inductively coupled plasma body (ICP) to carve
In erosion machine sample room, sample room base vacuum is evacuated to 5 × 10-2After Torr, sample is sent in main cavity, is passed through 30sccm's
Oxygen, the argon gas of 5sccm, ICP radio-frequency power are set as 500W, and dc power is set as 100W, etch 120s.Taking-up has etched
At diamond sample, immersion washes away photoresist for 20 minutes in acetone, obtains under etch areas 4 and photoresist protection zone
Channel region 5.
5) it is cleaned by ultrasonic sample using acetone, isopropanol, deionized water, and dries up；By one layer of sample surfaces spin coating
AZ5214 photoresist toasts the single-crystal diamond sample of the good photoresist of spin coating 90 seconds under the conditions of 95 DEG C, and use is designed
Mask plate carries out ultraviolet photolithographic and exposes 4s, and development 30s removes the photoresist being exposed, leaves source-drain electrode figure.Photoetching is good
Sample be placed in electron beam evaporation equipment, base vacuum is evacuated to 5 × 10-4After Pa, Pd, Au two is sequentially depositing in sample surfaces
Layer metal, each 50,500nm.The diamond sample that deposition is completed is taken out, is immersed in N-Methyl pyrrolidone (NMP) solution, and
120 DEG C water-bath 5 minutes, then ultrasound peels off metal other than exposure area and obtains source electrode 6 and drain electrode 7.
6) it is cleaned by ultrasonic sample using acetone, isopropanol, deionized water, and dries up.By one layer of sample surfaces spin coating
AZ5214 photoresist toasts the single-crystal diamond sample of the good photoresist of spin coating 90 seconds under the conditions of 95 DEG C, and use is designed
Mask plate carries out ultraviolet photolithographic and exposes 4s, and development 30s removes the photoresist being exposed, leaves gate electrode figure.Photoetching is good
Sample is placed in electron beam evaporation equipment, and base vacuum is evacuated to 5 × 10-4After Pa, Al, Au metal are sequentially depositing in sample surfaces
50,300nm.The diamond sample that deposition is completed is taken out, is immersed in N-Methyl pyrrolidone (NMP) solution, and 120 DEG C of water-baths
5 minutes, then ultrasound peeled off the metal other than exposure area and obtains gate electrode 8, the final Buddha's warrior attendant ground mass for obtaining preparation and completing
Double hyer insulation gate medium field effect transistor.
Embodiment 4
A kind of body doped diamond base normally-off field effect transistor tube preparation method, comprises the following steps:
1) diamond substrate 1 that large area splicing is grown successively is carried out using diamond substrate standard cleaning technique
Inorganic, organic washing is dried with nitrogen spare.
2) single using being deposited in the diamond substrate of microwave plasma chemical vapor deposition (MPCVD) technology after cleaning
Diamond film 2, plasma power 1kW, chamber pressure 100Torr, total gas couette 500sccm, obtained list
Diamond film thickness is 1 μm, and resistivity is greater than 100M Ω cm, and rms surface roughness is less than 0.5nm, Raman curve
Half-peak breadth is less than 2cm-1, XRD rocking curve half-peak breadth is less than 30arcsec.
3) diamond sample takes out cleaning, and phosphonium ion, injectant are injected into monocrystalline diamond film using ion implanting
Amount is 1014cm-3, Implantation Energy 90keV.Diamond sample after ion implanting is annealed 30 points under 900 DEG C of argon atmospheres
Clock, obtaining carrier concentration is 1016cm-3, mobility 30cm2/V·s。
4) it is cleaned by ultrasonic sample using acetone, isopropanol, deionized water, and dries up；By one layer of sample surfaces spin coating
AZ5214 photoresist toasts the single-crystal diamond sample of the good photoresist of spin coating 90 seconds under the conditions of 95 DEG C, and use is designed
Mask plate carries out ultraviolet photolithographic and exposes 4s, and development 30s removes the photoresist being exposed, leaves the figure in the region that is etched.It will protect
The photoresist stayed post bake 120s under the conditions of 120 DEG C.The good sample of photoetching is placed in inductively coupled plasma body (ICP) to carve
In erosion machine sample room, sample room base vacuum is evacuated to 5 × 10-2After Torr, sample is sent in main cavity, is passed through 30sccm's
Oxygen, the argon gas of 5sccm, ICP radio-frequency power are set as 500W, and dc power is set as 100W, etch 120s.Taking-up has etched
At diamond sample, immersion washes away photoresist for 20 minutes in acetone, obtains under etch areas 4 and photoresist protection zone
Channel region 5.
5) it is cleaned by ultrasonic sample using acetone, isopropanol, deionized water, and dries up；By one layer of sample surfaces spin coating
AZ5214 photoresist toasts the single-crystal diamond sample of the good photoresist of spin coating 90 seconds under the conditions of 95 DEG C, and use is designed
Mask plate carries out ultraviolet photolithographic and exposes 4s, and development 30s removes the photoresist being exposed, leaves source-drain electrode figure.Photoetching is good
Sample be placed in electron beam evaporation equipment, base vacuum is evacuated to 5 × 10-4After Pa, Pd, Au two is sequentially depositing in sample surfaces
Layer metal, each 50,500nm.The diamond sample that deposition is completed is taken out, is immersed in N-Methyl pyrrolidone (NMP) solution, and
120 DEG C water-bath 5 minutes, then ultrasound peels off metal other than exposure area and obtains source electrode 6 and drain electrode 7.
6) it is cleaned by ultrasonic sample using acetone, isopropanol, deionized water, and dries up.By one layer of sample surfaces spin coating
AZ5214 photoresist toasts the single-crystal diamond sample of the good photoresist of spin coating 90 seconds under the conditions of 95 DEG C, and use is designed
Mask plate carries out ultraviolet photolithographic and exposes 4s, and development 30s removes the photoresist being exposed, leaves gate electrode figure.Photoetching is good
Sample is placed in electron beam evaporation equipment, and base vacuum is evacuated to 5 × 10-4After Pa, Al, Au metal are sequentially depositing in sample surfaces
50,300nm.The diamond sample that deposition is completed is taken out, is immersed in N-Methyl pyrrolidone (NMP) solution, and 120 DEG C of water-baths
5 minutes, then ultrasound peeled off the metal other than exposure area and obtains gate electrode 8, the final Buddha's warrior attendant ground mass for obtaining preparation and completing
Double hyer insulation gate medium field effect transistor.
Embodiment 5
A kind of body doped diamond base normally-off field effect transistor tube preparation method, comprises the following steps:
1) using diamond substrate standard cleaning technique to the diamond substrate 1 that CVD technology is grown successively carry out it is inorganic, have
Machine cleaning, is dried with nitrogen spare.
2) single using being deposited in the diamond substrate of microwave plasma chemical vapor deposition (MPCVD) technology after cleaning
Diamond film 2, plasma power 1kW, chamber pressure 100Torr, total gas couette 500sccm, obtained list
Diamond film thickness is 1 μm, and resistivity is greater than 100M Ω cm, and rms surface roughness is less than 0.5nm, Raman curve
Half-peak breadth is less than 2cm-1, XRD rocking curve half-peak breadth is less than 30arcsec.
3) diamond sample is kept in MPCVD chamber, uses phosphine as impurity source, and microwave plasma power is
750W, total gas couette 400sccm, chamber pressure 25Torr, epitaxial growth 5 hours, obtained doped diamond thin films thickness
It is 2 μm, carrier concentration 1017cm-3, mobility 30cm2/V·s。。
4) it is cleaned by ultrasonic sample using acetone, isopropanol, deionized water, and dries up；By one layer of sample surfaces spin coating
AZ5214 photoresist toasts the single-crystal diamond sample of the good photoresist of spin coating 90 seconds under the conditions of 95 DEG C, and use is designed
Mask plate carries out ultraviolet photolithographic and exposes 4s, and development 30s removes the photoresist being exposed, leaves the figure in the region that is etched.It will protect
The photoresist stayed post bake 120s under the conditions of 120 DEG C.The good sample of photoetching is placed in inductively coupled plasma body (ICP) to carve
In erosion machine sample room, sample room base vacuum is evacuated to 5 × 10-2After Torr, sample is sent in main cavity, is passed through 30sccm's
Oxygen, the argon gas of 5sccm, ICP radio-frequency power are set as 500W, and dc power is set as 100W, etch 120s.Taking-up has etched
At diamond sample, immersion washes away photoresist for 20 minutes in acetone, obtains under etch areas 4 and photoresist protection zone
Channel region 5.
5) it is cleaned by ultrasonic sample using acetone, isopropanol, deionized water, and dries up；By one layer of sample surfaces spin coating
AZ5214 photoresist toasts the single-crystal diamond sample of the good photoresist of spin coating 90 seconds under the conditions of 95 DEG C, and use is designed
Mask plate carries out ultraviolet photolithographic and exposes 4s, and development 30s removes the photoresist being exposed, leaves source-drain electrode figure.Photoetching is good
Sample be placed in electron beam evaporation equipment, base vacuum is evacuated to 5 × 10-4After Pa, Pd, Au two is sequentially depositing in sample surfaces
Layer metal, each 50,500nm.The diamond sample that deposition is completed is taken out, is immersed in N-Methyl pyrrolidone (NMP) solution, and
120 DEG C water-bath 5 minutes, then ultrasound peels off metal other than exposure area and obtains source electrode 6 and drain electrode 7.
6) it is cleaned by ultrasonic sample using acetone, isopropanol, deionized water, and dries up.By one layer of sample surfaces spin coating
AZ5214 photoresist toasts the single-crystal diamond sample of the good photoresist of spin coating 90 seconds under the conditions of 95 DEG C, and use is designed
Mask plate carries out ultraviolet photolithographic and exposes 4s, and development 30s removes the photoresist being exposed, leaves gate electrode figure.Photoetching is good
Sample is placed in electron beam evaporation equipment, and base vacuum is evacuated to 5 × 10-4After Pa, Al, Au metal are sequentially depositing in sample surfaces
50,300nm.The diamond sample that deposition is completed is taken out, is immersed in N-Methyl pyrrolidone (NMP) solution, and 120 DEG C of water-baths
5 minutes, then ultrasound peeled off the metal other than exposure area and obtains gate electrode 8, the final Buddha's warrior attendant ground mass for obtaining preparation and completing
Double hyer insulation gate medium field effect transistor.
Claims (10)
1. a kind of body doped diamond base normally-off field effect transistor characterized by comprising diamond substrate (1), monocrystalline
Diamond epitaxial film (2), body doped single crystal epitaxial film (3), etch areas (4), channel region (5), source electrode (6), leakage
Electrode (7) and gate electrode (8)；
Diamond substrate (1) is equipped with one layer of single-crystal diamond epitaxial film (2)；Single-crystal diamond epitaxial film is arranged on (2)
Body doped single crystal epitaxial film (3) and etch areas (4)；Be provided on body doped single crystal epitaxial film (3) channel region (5) and
Etch areas (4)；Etch areas (4) is high Schottky barrier terminal, and channel region (5) is low Schottky barrier terminal；
Channel region (5) includes body doped single crystal epitaxial film (3), and carrier being capable of the migration in channel region (5)；Body doping
Single crystal epitaxial film (3) is the single crystal diamond material of Chemical Vapor-Phase Epitaxy doping or ion implantation doping；
Source electrode (6) and drain electrode (7) are set to the both ends of channel region (5)；Gate electrode (8) setting is in source electrode (6) and leakage
In etch areas (4) and channel region (5) between electrode (7), and setting is thin in single-crystal diamond extension simultaneously for gate electrode (8)
In the etch areas (4) of film (2).
2. a kind of body doped diamond base normally-off field effect transistor according to claim 1, which is characterized in that monocrystalline
Diamond epitaxial film (2) is the diamond of chemical vapor epitaxy, and resistivity is greater than 100M Ω cm, root mean square table
Surface roughness is less than 0.5nm, and Raman curve half-peak breadth is less than 2cm-1, XRD rocking curve half-peak breadth is less than 30arcsec.
3. a kind of body doped diamond base normally-off field effect transistor according to claim 1, which is characterized in that body is mixed
Miscellaneous single crystal epitaxial film (3) is the single crystal diamond material of Chemical Vapor-Phase Epitaxy doping or ion implantation doping；Body doped single crystal
Epitaxial film (3) is outside microwave plasma chemical vapour phase epitaxy, Hot Filament Chemical Vapor extension or arc discharge chemical gaseous phase
Prolong the single crystal diamond material of doping；Doping type is N-shaped or p-type, impurity concentration 1016-1021cm-3, carrier concentration
It is 1016-1021cm-3, carrier mobility 20-2000cm2/V·s。
4. a kind of body doped diamond base normally-off field effect transistor according to claim 1, which is characterized in that body is mixed
The width of channel region (5) is 5nm-10 μm on miscellaneous single crystal epitaxial film (3), and number is 1-500；
The width of etch areas (4) is 5nm-10 μm on body doped single crystal epitaxial film (3), and length is 1 μm of -1mm, etch areas
(4) schottky barrier height formed with metal is greater than 1eV, and etch areas (4) is formed by dry etching, dry etching ICP,
RIE, IBE or FIB.
5. a kind of body doped diamond base normally-off field effect transistor according to claim 1, which is characterized in that source electricity
The material of pole (6) or drain electrode (7) is Au, Pd, Ir, Pt or Ti；
The material of gate electrode (8) is Al, Zr or Mo, high Schottky barrier is formed with etch areas (4), with channel region (5) shape
At low Schottky barrier.
6. a kind of body doped diamond base normally-off field effect transistor according to any one of claim 1 to 5, special
Sign is that the channel region (5) and etch areas (4) interval on body doped single crystal epitaxial film (3) are arranged.
7. a kind of preparation method of body doped diamond base normally-off field effect transistor, which comprises the steps of:
Step 1, diamond substrate (1) is cleaned, and dried up；
Step 2, the homoepitaxy monocrystalline diamond film on diamond substrate (1) obtains single-crystal diamond epitaxial film (2)；
Step 3, the doped epitaxial on single-crystal diamond epitaxial film (2) obtains body on single-crystal diamond epitaxial film (2) surface
Doped single crystal epitaxial film (3)；
Step 4, body doped single crystal epitaxial film (3) are cleaned, then make etching structure figure on its surface using photoetching technique,
Etching structure is transferred on single-crystal diamond epitaxial film (2) using dry etching technology, forms etch areas (4) and channel
Region (5), etch areas (4) are high Schottky barrier terminal, and channel region (5) is low Schottky barrier terminal；
Step 5, using photoetching technique channel region (5) both ends formed source, drain electrode patterns, sedimentary origin, drain metal, and
Source electrode (6) and drain electrode (7) Ohmic contact is obtained using lift-off technology；
Step 6, gate electrode figure, depositing gate electrode gold are formed in etch areas (4) and channel region (5) using photoetching technique
Belong to, obtains gate electrode (8) Schottky contacts using lift-off technology.
8. a kind of preparation method of body doped diamond base normally-off field effect transistor according to claim 7, special
Sign is that the single-crystal diamond epitaxial film (2) that step 2 obtains is CVD growth diamond, and resistivity is greater than 100M Ω
Cm, rms surface roughness are less than 0.5nm, and Raman curve half-peak breadth is less than 2cm-1, XRD rocking curve half-peak breadth is less than
30arcsec。
9. a kind of preparation method of body doped diamond base normally-off field effect transistor according to claim 7, special
Sign is that the body doped single crystal epitaxial film (3) that step 3 obtains is microwave plasma chemical vapour phase epitaxy, hot-wire chemical gas
The single crystal diamond stone material of phase epitaxy, the single crystal diamond material of arc discharge Chemical Vapor-Phase Epitaxy doping or ion implantation doping
Material, doping type are N-shaped or p-type, impurity concentration 1016-1021cm-3, carrier concentration 1016-1021cm-3, carrier
Mobility is 20-2000cm2/V·s。
10. a kind of preparation method of body doped diamond base normally-off field effect transistor according to claim 7, special
Sign is that the width of etch areas (4) is 5nm-10 μm on the body doped single crystal epitaxial film (3) formed in step 4, and length is
1 μm of -1mm is greater than 1eV with the schottky barrier height that metal is formed, and etch areas is formed by dry etching, and dry etching includes
ICP, RIE, IBE or FIB；Channel region (5) and metal are formed compared with low Schottky barrier, and the width of channel region (5) is 5nm-
10 μm, number is 1-500；
The source-drain electrode metal deposited in step 5 is Au, Pd, Ir, Pt or Ti；The gate electrode metal deposited in step 6 is Al, Zr
Or Mo.
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| CN112647127A (en) * | 2020-11-13 | 2021-04-13 | 西安交通大学 | Structure for controlling CVD growth single crystal diamond dislocation extension with metal assistance, and preparation method and application thereof |
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