CN103280395A - Thermal annealing method for manufacturing hydrogen end group conducting channel on diamond face - Google Patents
Thermal annealing method for manufacturing hydrogen end group conducting channel on diamond face Download PDFInfo
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- CN103280395A CN103280395A CN2013101841283A CN201310184128A CN103280395A CN 103280395 A CN103280395 A CN 103280395A CN 2013101841283 A CN2013101841283 A CN 2013101841283A CN 201310184128 A CN201310184128 A CN 201310184128A CN 103280395 A CN103280395 A CN 103280395A
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- hydrogen
- polycrystalline diamond
- conducting channel
- diamond substrate
- end group
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Abstract
The invention discloses a thermal annealing method for manufacturing a hydrogen end group conducting channel on a diamond face, which is characterized by comprising the steps as follows: (1) placing a polycrystalline diamond substrate in a chemical vapor deposition equipment reaction chamber, and vacuumizing the reaction chamber; (2), heating the reaction chamber and keeping the heating temperature for a period of time to remove impurities and organic residuals on the face of the polycrystalline diamond substrate; (3), introducing hydrogen into the reaction chamber, heating the polycrystalline diamond substrate in hydrogen atmosphere and keeping constant temperature for a period of time; (4), reducing the flow of the hydrogen, taking out the polycrystalline diamond substrate after reducing the temperature of the polycrystalline diamond substrate to room temperature in the hydrogen atmosphere, and closing all gas sources. The thermal annealing method can effectively form a C-H bond on the diamond face, realizes the conducting channel, and can enable the diamond face to be smooth and flat, thus improving the migration rate of carriers; and the roughness before and after the processing is basically same.
Description
Technical field
The present invention relates to the manufacture method technical field of semiconductor device.
Background technology
Be that the device of material foundation is referred to as diamond based device with monocrystalline, polycrystalline and nanocrystalline diamond, for example diamond MESFET, MISFET, JFET etc.Diamond based device has advantages such as working temperature height, breakdown field is powerful, cut-off frequency is high, power density is big, is the first-selection in following microwave high power field.And one of necessary condition of making semiconductor device is exactly, and realizes effective conducting channel at the polycrystalline diamond stone material of high resistant.
The method of existing making conducting channel mainly is to utilize the hydrogen plasma facture.Though this kind method can effectively realize the diamond conducting channel, because the high-energy of hydrogen plasma own, the characteristics of high etching make that the diamond surface after handling becomes very coarse, and surface roughness becomes nearly 10 times before handling.And formed conducting channel is present in nearly surface, so its conductive characteristic is subjected to the influence of surface topography very big, coarse surface-limited the raising of carrier mobility of diamond conducting channel, therefore, the surface channel that most hydrogen plasma of bibliographical information is handled, its mobility can only reach 20cm
2/ Vs.
Summary of the invention
Technical problem to be solved by this invention provides a kind of thermal annealing method is made the hydrogen end group conducting channel at diamond surface method, described method both can form c h bond effectively at diamond surface, form conducting channel, can guarantee the smooth smooth of diamond surface again, roughness is constant substantially before and after handling, and has improved the mobility of charge carrier rate.
For solving the problems of the technologies described above, the technical solution used in the present invention is: the method that a kind of thermal annealing method is made the hydrogen end group conducting channel at diamond surface is characterized in that may further comprise the steps:
(1) the polycrystalline diamond substrate is put into chemical vapor deposition equipment, reative cell is vacuumized;
(2) reative cell is heated up, and keep a period of time, remove impurity and the organic substance residues of polycrystalline diamond substrate surface;
(3) feed hydrogen in reative cell, in hydrogen atmosphere, the polycrystalline diamond substrate is heated up, constant temperature keeps a period of time;
(4) reduce hydrogen flowing quantity, take out the polycrystalline diamond substrate is cooled to room temperature in hydrogen atmosphere after, close all gas source, namely at diamond surface shape hydrogen end group conducting channel.
Preferably: before at first will be with an organic solvent the organic substance of polycrystalline diamond substrate surface be cleaned carrying out step (1), use washed with de-ionized water then, remove organic solvent.
Preferably: described organic solvent is one or more in acetone, trichloroethanes, isopropyl alcohol, the ethanol.
Preferably: described step (1) is: the polycrystalline diamond substrate is put into chemical vapor deposition equipment, reative cell is evacuated to 10
-4-10
-6Mbar.
Preferably: described step (2) is: reative cell is warming up to 600 ℃ of-900 ℃ of scopes, is incubated 10-60 minute, remove impurity and the organic substance residues of polycrystalline diamond substrate surface.
Preferably: described step (3) is: feed hydrogen in reative cell, 20-200L/min, chamber pressure keep in hydrogen atmosphere, the polycrystalline diamond substrate being heated to 600-1600 ℃ in the 20-1000 mbar scope, and constant temperature kept 10-60 minute.
Preferably: described step (4) is for reducing hydrogen flowing quantity to 10-100 L/min, takes out the polycrystalline diamond substrate is cooled to room temperature in hydrogen atmosphere after, closes all gas source.
The beneficial effect that adopts technique scheme to produce is: described method both can form c h bond effectively at diamond surface, realize conducting channel, can guarantee the smooth smooth of diamond surface again, roughness is constant substantially before and after handling, and has improved the mobility of charge carrier rate.
Description of drawings
The present invention is further detailed explanation below in conjunction with the drawings and specific embodiments.
Fig. 1 is the structural representation of polycrystalline diamond;
Fig. 2 is the polycrystalline diamond structural representation after handling through step of the present invention (3);
Fig. 3 is the polycrystalline diamond structural representation after handling through step of the present invention (4);
Fig. 4 is the structural representation that is positioned over airborne polycrystalline diamond after handling through described method;
Wherein: 1, polycrystalline diamond 2, P-type conduction raceway groove 3, air.
Embodiment
The method that a kind of thermal annealing method is made the hydrogen end group conducting channel at diamond surface is characterized in that may further comprise the steps:
(1) the polycrystalline diamond substrate is put into chemical vapor deposition equipment, reative cell is vacuumized;
(2) reative cell is heated up, and keep a period of time, remove impurity and the organic substance residues of polycrystalline diamond substrate surface;
(3) feed hydrogen in reative cell, in hydrogen atmosphere, the polycrystalline diamond substrate is heated up, constant temperature keeps a period of time;
(4) reduce hydrogen flowing quantity, take out the polycrystalline diamond substrate is cooled to room temperature in hydrogen atmosphere after, close all gas source, namely at diamond surface shape hydrogen end group conducting channel.
Before at first will be with an organic solvent the organic substance of polycrystalline diamond substrate surface be cleaned carrying out step (1), use washed with de-ionized water then, remove organic solvent.Described organic solvent is one or more in acetone, trichloroethanes, isopropyl alcohol, the ethanol.
Concrete, described step (1) is: the polycrystalline diamond substrate is put into chemical vapor deposition equipment, reative cell is evacuated to 10
-4-10
-6Mbar.Described step (2) is: reative cell is warming up to 600 ℃ of-900 ℃ of scopes, is incubated 10-60 minute, remove impurity and the organic substance residues of polycrystalline diamond substrate surface; Described step (3) is: feed hydrogen in reative cell, 20-200L/min, chamber pressure keep in hydrogen atmosphere, the polycrystalline diamond substrate being heated to 600-1600 ℃ in the 20-1000 mbar scope, and constant temperature kept 10-60 minute.Described step (4) is: reduce hydrogen flowing quantity to 10-100 L/min, the C-of diamond surface is combined with H fully in hydrogen atmosphere, the formation c h bond is covered in adamantine surface, temperature is reduced to temperature indicating after, close all gas source.
Embodiment one, and (1) adopts acetone, trichloroethanes, and organic solvents such as isopropyl alcohol clean the polycrystalline diamond substrate; Polycrystalline diamond substrate after cleaning is put into chemical vapor deposition equipment, and reative cell is evacuated to 10
-6Mbar, the structure of polycrystalline diamond is as shown in Figure 1;
(2) reative cell is warming up to 600 ℃, removes polycrystalline diamond substrate surface impurity and organic substance residues;
(3) feed hydrogen in reative cell, gas flow is 40L/min, and chamber pressure keeps 80mbar, and reative cell is heated up, and the polycrystalline diamond substrate is heated to 800 ℃, and is incubated 30 minutes in hydrogen atmosphere, and the structure of polycrystalline diamond as shown in Figure 2
(4) off-response chamber heating power supply is down to 15L/min with hydrogen flowing quantity, under this atmospheric condition, will react indoor temperature and be down to room temperature, closes all gas source, takes out the polycrystalline diamond substrate, and the structure of polycrystalline diamond as shown in Figure 3.
Embodiment two, and (1) adopts acetone, trichloroethanes, and organic solvents such as isopropyl alcohol clean the polycrystalline diamond substrate; Polycrystalline diamond substrate after cleaning is put into chemical vapor deposition equipment, and reative cell is evacuated to 10
-6Mbar, the structure of polycrystalline diamond is as shown in Figure 1;
(2) reative cell is warming up to 600 ℃, removes polycrystalline diamond substrate surface impurity and organic substance residues;
(3) feed hydrogen in reative cell, gas flow is 40L/min, and chamber pressure keeps 500mbar, and reative cell is heated up, and the polycrystalline diamond substrate is heated to 800 ℃, and is incubated 20 minutes in hydrogen atmosphere, and the structure of polycrystalline diamond as shown in Figure 2
(4) off-response chamber heating power supply is down to 15L/min with hydrogen flowing quantity, under this atmospheric condition, will react indoor temperature and be down to room temperature, closes all gas source, takes out the polycrystalline diamond substrate, and the structure of polycrystalline diamond as shown in Figure 3.
Inventive principle: under the hot conditions C-O key of diamond surface is opened, formed the outstanding key of C-, anneal under hydrogen atmosphere, C-fully is combined with H, form c h bond, simultaneously, hydrogen atom is to graphite phase, SP
2The etch rate of structure is much larger than diamond SP
3Structure when diamond surface forms c h bond, effectively suppresses the C atomic rearrangement and forms the graphite phase, makes that finally diamond surface is covered by c h bond.
This under hydrogen atmosphere thermal anneal process, the surface abbreviates the hydrogen end group diamond here as by the diamond that c h bond covers.When this hydrogen end group is exposed in the air, the H in the meeting absorbed air
2O and CO
2The isopolarity molecule, and form new electro-chemical systems, in this electro-chemical systems, the electronegativity of C-H dipole is 1.3eV, and valence band is higher than the chemical potential of adsorbing polar molecule, can cause the transfer of electronics, at this moment, Fermi level at the interface will be pinned at below the valence band, and adamantine nearly surf zone will cuniculately be accumulated, macro manifestations is the hole conduction of surface p type, and the structure of polycrystalline diamond as shown in Figure 4.Described method both can form c h bond effectively at diamond surface, realized conducting channel, can guarantee the smooth smooth of diamond surface again, and roughness is constant substantially before and after handling, and has improved the mobility of charge carrier rate.
Used specific case herein principle of the present invention and execution mode thereof are set forth, the explanation of above embodiment is just with helping understand method of the present invention and core concept thereof.Should be pointed out that for the person of ordinary skill of the art, can also carry out some improvement and modification to the present invention under the prerequisite that does not break away from the principle of the invention, these improvement and modification also fall in the protection range of claim of the present invention.
Claims (7)
1. the thermal annealing method method of making the hydrogen end group conducting channel at diamond surface is characterized in that may further comprise the steps:
(1) the polycrystalline diamond substrate is put into chemical vapor deposition equipment, reative cell is vacuumized;
(2) reative cell is heated up, and keep a period of time, remove impurity and the organic substance residues of polycrystalline diamond substrate surface;
(3) feed hydrogen in reative cell, in hydrogen atmosphere, the polycrystalline diamond substrate is heated up, constant temperature keeps a period of time;
(4) reduce hydrogen flowing quantity, take out the polycrystalline diamond substrate is cooled to room temperature in hydrogen atmosphere after, close all gas source, namely at diamond surface shape hydrogen end group conducting channel.
2. a kind of thermal annealing method according to claim 1 is made the method for hydrogen end group conducting channel at diamond surface, it is characterized in that before at first will be with an organic solvent the organic substance of polycrystalline diamond substrate surface being cleaned carrying out step (1), use washed with de-ionized water then, remove organic solvent.
3. a kind of thermal annealing method according to claim 2 is characterized in that in the method for diamond surface making hydrogen end group conducting channel described organic solvent is one or more in acetone, trichloroethanes, isopropyl alcohol, the ethanol.
4. a kind of thermal annealing method according to claim 1 is made the method for hydrogen end group conducting channel at diamond surface, it is characterized in that described step (1) is: the polycrystalline diamond substrate is put into chemical vapor deposition equipment, reative cell is evacuated to 10
-4-10
-6Mbar.
5. a kind of thermal annealing method according to claim 1 is made the method for hydrogen end group conducting channel at diamond surface, it is characterized in that described step (2) is: reative cell is warming up to 600 ℃ of-900 ℃ of scopes, be incubated 10-60 minute, remove impurity and the organic substance residues of polycrystalline diamond substrate surface.
6. a kind of thermal annealing method according to claim 1 is made the method for hydrogen end group conducting channel at diamond surface, it is characterized in that described step (3) is: in reative cell, feed hydrogen, 20-200L/min, chamber pressure keeps in the 20-1000 mbar scope, in hydrogen atmosphere, the polycrystalline diamond substrate is heated to 600-1600 ℃, and constant temperature kept 10-60 minute.
7. a kind of thermal annealing method according to claim 1 is made the method for hydrogen end group conducting channel at diamond surface, it is characterized in that described step (4) is for reducing hydrogen flowing quantity to 10-100 L/min, take out the polycrystalline diamond substrate is cooled to room temperature in hydrogen atmosphere after, close all gas source.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5854496A (en) * | 1996-09-02 | 1998-12-29 | Tokyo Gas Co., Ltd. | Hydrogen-terminated diamond misfet and its manufacturing method |
| CN101859704A (en) * | 2010-05-26 | 2010-10-13 | 上海大学 | Preparation method of high-temperature and high-power field effect transistor |
| US20100289031A1 (en) * | 2007-07-04 | 2010-11-18 | Tokuyuki Teraji | Diamond semiconductor device |
| CN102903756A (en) * | 2012-09-07 | 2013-01-30 | 中国电子科技集团公司第五十五研究所 | Field effect transistor with diamond metal-insulator-semiconductor structure and preparation method thereof |
-
2013
- 2013-05-17 CN CN201310184128.3A patent/CN103280395B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5854496A (en) * | 1996-09-02 | 1998-12-29 | Tokyo Gas Co., Ltd. | Hydrogen-terminated diamond misfet and its manufacturing method |
| US20100289031A1 (en) * | 2007-07-04 | 2010-11-18 | Tokuyuki Teraji | Diamond semiconductor device |
| CN101859704A (en) * | 2010-05-26 | 2010-10-13 | 上海大学 | Preparation method of high-temperature and high-power field effect transistor |
| CN102903756A (en) * | 2012-09-07 | 2013-01-30 | 中国电子科技集团公司第五十五研究所 | Field effect transistor with diamond metal-insulator-semiconductor structure and preparation method thereof |
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