CN107104141A - Buddha's warrior attendant ground mass backgate type hydrogen terminal field-effect transistor and preparation method thereof - Google Patents
Buddha's warrior attendant ground mass backgate type hydrogen terminal field-effect transistor and preparation method thereof Download PDFInfo
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- CN107104141A CN107104141A CN201710331449.XA CN201710331449A CN107104141A CN 107104141 A CN107104141 A CN 107104141A CN 201710331449 A CN201710331449 A CN 201710331449A CN 107104141 A CN107104141 A CN 107104141A
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- epitaxial film
- crystal diamond
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- back grid
- effect transistor
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 239000001257 hydrogen Substances 0.000 title claims abstract description 31
- 229910052739 hydrogen Inorganic materials 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 238000002353 field-effect transistor method Methods 0.000 title abstract description 4
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 115
- 239000010432 diamond Substances 0.000 claims abstract description 115
- 239000013078 crystal Substances 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 230000005669 field effect Effects 0.000 claims abstract description 26
- 238000000605 extraction Methods 0.000 claims abstract description 15
- 238000005984 hydrogenation reaction Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 11
- 238000002955 isolation Methods 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 9
- 230000003746 surface roughness Effects 0.000 claims description 9
- 238000002441 X-ray diffraction Methods 0.000 claims description 8
- 238000001069 Raman spectroscopy Methods 0.000 claims description 7
- 239000004047 hole gas Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 239000004575 stone Substances 0.000 claims description 3
- 238000013461 design Methods 0.000 abstract description 2
- 230000007774 longterm Effects 0.000 abstract description 2
- 239000010931 gold Substances 0.000 description 12
- 239000010410 layer Substances 0.000 description 10
- 229910052741 iridium Inorganic materials 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 229910052697 platinum Inorganic materials 0.000 description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 239000011435 rock Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 239000002156 adsorbate Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000004845 hydriding Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
- H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66045—Field-effect transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The invention discloses a kind of Buddha's warrior attendant ground mass backgate type hydrogen terminal field-effect transistor and preparation method thereof；The field-effect transistor, includes diamond substrate, back grid, source electrode, grid extraction electrode, drain electrode and single-crystal diamond epitaxial film；Diamond substrate is provided with back grid, and back grid is provided with grid extraction electrode；The upper surface of diamond substrate covers one layer of single-crystal diamond epitaxial film, and back grid is wrapped in wherein by single-crystal diamond epitaxial film, and the top of single-crystal diamond epitaxial film is stretched out on the top of grid extraction electrode；Source electrode and drain electrode are additionally provided with single-crystal diamond epitaxial film.The present invention is using the design of backgate type, current-carrying part is all exposed, accordingly even when in the case of causing hydrogen terminal conducting channel to degenerate or even fail under the conditions of long-term use or high temperature overshoot, device can be placed in hydrogen plasma environment, so that conducting channel surface region is hydrogenated again, recover electric conductivity, realize the reuse of field-effect transistor.
Description
Technical field
The invention belongs to field of semiconductor devices, more particularly to a kind of Buddha's warrior attendant ground mass backgate type hydrogen terminal field-effect transistor
And preparation method thereof.
Background technology
Diamond is a kind of excellent semiconductor material with wide forbidden band, with the superiority that other semi-conducting materials are incomparable
Matter.Particularly in terms of electricity, the energy gap of diamond is that 5.5eV, breakdown voltage are more than 10MV/cm, electron mobility and are
4500cm2/ V ﹒ s, hole mobility are 3800cm2/ V ﹒ s.Therefore, hyperfrequency, the super high power electricity made using diamond
Sub- device has inborn advantage.
Although diamond can realize different types of doping as silicon by mixing boron element and P elements.But
The activation for being phosphorus atoms in a diamond can be 0.6eV, and this causes it to be difficult to be activated at room temperature, and then play conductive make
With.Realize that the method for high mobility is also failed in phosphorus doping by increasing implanted dopant concentration, because in highly doped mistake
Many defects are introduced in journey, and then cause compensation than too high.Research is found, single-crystal diamond surface is carried out after hydrogenation treatment,
The original carbon atom with dangling bonds and hydrogen atom can be caused to combine, i.e. hydrogen terminal diamond.The diamond of the terminal type
Surface has one layer of conductive two-dimensional hole gas, and its carrier concentration is up to 1013Cm-2 or so, carrier mobility is up to 20-
200cm2·V-1·s-1, the discovery greatly promoted the development of diamond field effect transistor.Research shows, the Two-Dimensional Hole
Gas-bearing formation is caused by the c h bond polarization of diamond surface and the adsorbate on surface, and c h bond can be broken under high temperature action,
Surface adsorbate can also volatilize.Therefore highly hydrogenated diamond completely can be for fabricating yard effect transistor, but in length
Phase uses or high temperature is crossed and sweeps away the hydrogen terminal with electric action by degeneration, and then influences the performance of device, it is impossible to reuse.
The content of the invention
Object of the present invention is to provide a kind of Buddha's warrior attendant ground mass backgate type hydrogen terminal field-effect transistor and its preparation side
Method, to solve above-mentioned technical problem.Grid is embedded in diamond by the present invention so that diamond hydrogen terminal conducting channel is completely sudden and violent
Expose, the purpose that device is repeatedly hydrogenated, reused has can be achieved, cost is effectively reduced.
To achieve these goals, the present invention is adopted the following technical scheme that：
Buddha's warrior attendant ground mass backgate type hydrogen terminal field-effect transistor, electricity is drawn comprising diamond substrate, back grid, source electrode, grid
Pole, drain electrode and single-crystal diamond epitaxial film；Diamond substrate is provided with back grid, and back grid is provided with grid extraction electrode；Gold
The upper surface of hard rock substrate covers one layer of single-crystal diamond epitaxial film, and back grid is wrapped in it by single-crystal diamond epitaxial film
In, the top of single-crystal diamond epitaxial film is stretched out on the top of grid extraction electrode；Source is additionally provided with single-crystal diamond epitaxial film
Pole and drain electrode.
Further, source electrode and drain electrode are located at the both sides for the back grid for not exposing single-crystal diamond epitaxial film, source respectively
Pole and drain electrode spacing are more than the width of back electrode；Source electrode and the scope of drain electrode are less than or equal to the back grid scope do not exposed.
Further, source electrode and drain electrode are arranged on the single-crystal diamond epitaxial film of hydrogenation, and golden with the monocrystalline of hydrogenation
Hard rock epitaxial film formation Ohmic contact.
Further, on single-crystal diamond epitaxial film surface between source electrode, drain electrode and source electrode and drain electrode beyond part
Region is handled by electric isolation.
Further, back gate thickness is 0.001-1 μm；Source electrode and drain electrode thickness are 0.07-1 μm；Outside single-crystal diamond
Prolong film for intrinsic diamond material；Single-crystal diamond epitaxial film is higher by back grid in the thickness of back grid upper part
0.001-5 μm, resistivity is more than 100M Ω cm, and rms surface roughness is less than 0.5nm, and Raman half-peak breadth is less than 5cm-1, X
X ray diffraction half-peak breadth is less than 0.05 °.
Further, diamond substrate is intrinsic diamond material, and rms surface roughness is less than 0.5nm, Raman half
Peak width is less than 6cm-1, X-ray diffraction half-peak breadth is less than 0.1 °.
The preparation method of Buddha's warrior attendant ground mass backgate type hydrogen terminal field-effect transistor, comprises the following steps：
1) soda acid processing, is carried out to diamond substrate, and dried up；
2), back grid is formed on diamond substrate surface；
3), extension obtains single-crystal diamond epitaxial film in diamond substrate and back grid；
4), back grid just single-crystal diamond epitaxial film above in part is performed etching using lithographic technique, Zhi Daolu
Go out the part back grid；
5), formed in the back grid part exposed and draw grid extraction electrode；
6) hydrogenation treatment, is carried out to single-crystal diamond epitaxial film, two-dimensional hole gas is obtained under a surface, and to hydrogenation
Single-crystal diamond epitaxial film cleaning afterwards；
7) source electrode and drain electrode, are formed on single-crystal diamond epitaxial film surface；Source electrode and drain electrode spacing are more than back electrode
Width；Source electrode and drain electrode are located at the both sides for the back grid not exposed respectively；Source electrode and the scope of drain electrode, which are less than or equal to, not to be exposed
Back grid scope；
8) part between source electrode, drain electrode and source electrode and drain electrode, is covered on single-crystal diamond epitaxial film surface, and to not hiding
Cover carries out electric isolation, then cleans, obtains Buddha's warrior attendant ground mass backgate type field-effect transistor.
Further, step 6) in hydrogenation treatment be to obtain two-dimensional hole gas under single-crystal diamond epitaxial film surface
Layer；Its carrier concentration is 2 × 1011-2×1015cm2, mobility is 20-200cm2/ Vs, square resistance be less than 20K Ω/
□。
Further, step 8) in electric isolation be, to the processing of single-crystal diamond epitaxial film exposed surface, and to make it
Resistivity is more than 100M Ω cm.
Further, step 3) in extension single-crystal diamond epitaxial film technology be microwave plasma gas chemistry sink
Product technology, hot-wire chemical gas-phase deposition technology or direct current jet plasma technology；
Further, step 4) in lithographic technique be use dry etching or wet etching technique；Etching depth is reached
Back grid is advisable.
Relative to prior art, the invention has the advantages that：
The present invention is all exposed the current-carrying part of Buddha's warrior attendant ground mass hydrogen terminal field-effect transistor using the design of backgate type
Come, accordingly even when causing the situation that hydrogen terminal conducting channel is degenerated or even failed under the conditions of long-term use or high temperature overshoot
Under, device can be placed in hydrogen plasma environment so that conducting channel surface region is hydrogenated again, recover electric conductivity
Can, realize the reuse of field-effect transistor.
Brief description of the drawings
Fig. 1 is a kind of structural representation of Buddha's warrior attendant ground mass backgate type hydrogen terminal field-effect transistor；
Fig. 2-1 to Fig. 2-7 is the preparation method flow chart of Buddha's warrior attendant ground mass backgate type hydrogen terminal field-effect transistor of the present invention；
Wherein, Fig. 2-2 (a) be step 2) structure front view, Fig. 2-2 (b) be structure shown in Fig. 2-2 (a) top view；Fig. 2-3 (a)
For step 3) front view of structure, Fig. 2-3 (b) is the top view of structure shown in Fig. 2-3 (a)；Fig. 2-4 (a) is step 5) structure
Front view, Fig. 2-4 (b) be structure shown in Fig. 2-4 (a) top view；Fig. 2-5 (a) be step 6) structure front view, Fig. 2-
5 (b) is the top view of structure shown in Fig. 2-5 (a)；Fig. 2-6 (a) be step 7) structure front view, Fig. 2-6 (b) be Fig. 2-6
(a) top view of structure shown in.
Embodiment
With reference to the accompanying drawings and detailed description to the detailed description of the invention.
Refer to shown in Fig. 1, the invention provides a kind of Buddha's warrior attendant ground mass backgate type hydrogen terminal field-effect transistor, include gold
Hard rock substrate 1, back grid 2, source electrode 3, grid extraction electrode 4, drain electrode 5 and single-crystal diamond epitaxial film 6.
The upper surface central area of diamond substrate 1 is provided with back grid 2, and back grid 2 is provided with grid extraction electrode 4；Buddha's warrior attendant
The upper surface at stone lining bottom 1 covers one layer of single-crystal diamond epitaxial film 6, and back grid 2 is wrapped in by single-crystal diamond epitaxial film 6
Wherein, the top of single-crystal diamond epitaxial film 6 is stretched out on the top of grid extraction electrode 4.
The top of single-crystal diamond epitaxial film 6 is located at and not exposed provided with source electrode 3 and drain electrode 5, source electrode 3 respectively with drain electrode 5
The both sides of the back grid 2 of single-crystal diamond epitaxial film 6, source electrode 3 and 5 spacing of drain electrode are more than the width of back electrode 2；The He of source electrode 3
The scope of back grid 2 that the scope of drain electrode 5 is not exposed no more than.
Diamond substrate 1 is intrinsic diamond material, and rms surface roughness is less than 0.5nm, and Raman half-peak breadth is less than
6cm-1, X-ray diffraction half-peak breadth is less than 0.1 °.
Single-crystal diamond epitaxial film 6 is intrinsic diamond material, and thickness is 0.05-50 μm, and resistivity is more than 100M
Ω cm, rms surface roughness is less than 0.5nm, and Raman half-peak breadth is less than 5cm-1, X-ray diffraction half-peak breadth is less than 0.05 °.
Source electrode 3 and the material of drain electrode 5 are a kind of metal and the respective metals such as Pt, Pd, Ir, Au, Ti, Pt/Ir, Pt/Au/Ti
Combination；Source electrode 3 and 5 thickness of drain electrode are 0.07-1 μm；Source electrode 3 and the single-crystal diamond epitaxial film 6 of drain electrode 5 and hydrogenation are formed
Ohmic contact；
The material of back grid 2 and grid extraction electrode 4 is a kind of metals such as Ir, W, Zr, Pt, Ir/W, Pd/Pt/Au, Ti/Au
And the combination of respective metal；The thickness of back grid 2 is 0.001-1 μm.
Present invention also offers a kind of Buddha's warrior attendant ground mass backgate type hydrogen terminal field effect transistor tube preparation method, referring to Fig. 2-1
To Fig. 2-7, carried out successively according to following steps：
1) soda acid processing, is carried out to diamond substrate 1, and dried up, as shown in Fig. 2-1；
2) back grid 2, is formed on the surface of diamond substrate 1 using photoetching technique, metal deposition technique, lift-off technology, such as
Shown in Fig. 2-2；
3), extension obtains single-crystal diamond epitaxial film 6 in diamond substrate 1 and back grid 2, and to single-crystal diamond
The surface of epitaxial film 6 is handled, as Figure 2-3；
4), the just single-crystal diamond epitaxial film 6 above of part back grid 2 is performed etching using lithographic technique, until
Expose the part back grid 2；
5), formed using photoetching technique, metal deposition technique, lift-off technology in the part of back grid 2 exposed and draw grid
4, as in Figure 2-4；
6) hydrogenation treatment, is carried out to the single-crystal diamond epitaxial film 6 after surface treatment, two-dimentional sky is obtained under a surface
Cave gas, and the single-crystal diamond epitaxial film 6 after hydrogenation is cleaned, as shown in Figure 2-5；
7), source is formed on the surface of single-crystal diamond epitaxial film 6 using photoetching technique, metal deposition technique, lift-off technology
Pole 3 and drain electrode 5；Source electrode 3 and 5 spacing of drain electrode are more than the width of back electrode 2；Source electrode 3 and drain electrode 5 are located at the backgate do not exposed respectively
The both sides of pole 2；The scope of back grid 2 that source electrode 3 and the scope of drain electrode 5 are not exposed no more than, as shown in figures 2-6；
8), cover on the surface of single-crystal diamond epitaxial film 6 source electrode 3 and drain electrode 5 and its between part, and to non-shielding part
Divide and carry out electric isolation, then cleaning sample, obtains Buddha's warrior attendant ground mass backgate type field-effect transistor, as illustrated in figs. 2-7；
Wherein step 1) diamond substrate 1 is levies diamond, and rms surface roughness is less than 0.3nm, draws
Graceful half-peak breadth is less than 6cm-1, X-ray diffraction half-peak breadth is less than 0.1 °.
Wherein step 3) technology of the epitaxy single-crystal diamond epitaxial film 6 is microwave plasma chemical vapor deposition
Technology, hot-wire chemical gas-phase deposition technology or direct current jet plasma technology etc.；Step 3) in extension obtain single-crystal diamond
The surface of monocrystalline diamond film 6 is handled after epitaxial film 6：Its surface is polished and is thinned so that single-crystal diamond is thin
The surface Root Mean Square surface roughness of film 6 is less than 1nm；So that monocrystalline diamond film 6 is higher by 0.001-5 μm of back grid 2.Monocrystalline
Diamond epitaxial film 6 is intrinsic diamond material, and thickness is 0.05-50 μm, and resistivity is more than 100M Ω cm, root mean square table
Surface roughness is less than 0.5nm, and Raman half-peak breadth is less than 5cm-1, X-ray diffraction half-peak breadth is less than 0.05 °.
Wherein step 6) hydrogenation treatment is by step 5) in obtained sample be placed in hydrogen plasma, treatment temperature is
500-1500 DEG C, processing time is 5 seconds to 24 hours；Two-Dimensional Hole gas-bearing formation is obtained under single-crystal diamond epitaxial film surface,
Its carrier concentration is 2 × 1011-2×1015cm2, mobility is 20-200cm2/ Vs, square resistance is less than 20K Ω/.
Wherein step 7) material of the source electrode 3 and drain electrode 5 is the one kind such as Pt, Pd, Ir, Au, Ti, Pt/Ir, Pt/Au/Ti
The combination of metal and respective metal；Source electrode 3 and 5 thickness of drain electrode are 0.07-1 μm；Source electrode 3 and 5 the monocrystalline gold that can be with hydrogenation that drain
The formation Ohmic contact of hard rock epitaxial film 6；
Wherein step 8) electric isolation is exposed using oxygen plasma or ozone processing single-crystal diamond epitaxial film 6
Surface, makes its resistivity be more than 100M Ω cm；
Wherein step 2) and step 5) material of the back grid 2 and grid extraction electrode 4 is Ir, W, Zr, Pt, Ir/W, Pd/
A kind of combination of the metal such as Pt/Au, Ti/Au and respective metal；The thickness of back grid 2 is 0.001-1 μm.
Embodiment
A kind of preparation method of Buddha's warrior attendant ground mass backgate type hydrogen terminal field-effect transistor is comprised the following steps：
1) diamond substrate 1 is cleaned using the sour alkali washing process of standard, removes the non-diamond phase on surface, then
Diamond substrate 1 is cleaned using alcohol, acetone, deionized water, diamond substrate 1 is dried up using nitrogen.
2) in one layer of AZ5214 photoresist of sample surfaces spin coating, sample is then heated 90 seconds as 100 DEG C of hot plates, then
Using ultraviolet exposure machine 5s, then sample is soaked in developer solution 60 seconds, back grid electrode pattern is completed and is transferred on sample；Make
Deposited by electron beam evaporation deposits one layer of 100nm iridium in sample surfaces, and experiment condition is：Chamber presses 5 × 10-4Pa, room temperature；Then will
Sample is soaked in acetone, and sample is peeled off, and obtains back grid 2.
3) the thick monocrystalline of one layer of 200nm is grown in diamond substrate 1 using microwave plasma CVD technology
Diamond epitaxial film 6.Growth conditions is：Power 1KW, chamber pressure is 50Torr, total gas flow rate 500sccm.
4) using grinder to step 3) sample progress attenuated polishing processing is made；
5) in one layer of AZ5214 photoresist of sample surfaces spin coating, sample is then heated 90 seconds as 100 DEG C of hot plates, then
Using ultraviolet exposure machine 5s, then sample is soaked in developer solution 60 seconds, part back grid etched features is completed and is transferred to sample
On；
6) by sample 5) obtained sample carries out dry etching, untill the back grid of exposed portion, uses alcohol, third
Ketone, deionized water are cleaned to sample；
7) by step 6) sample is placed in microwave plasma CVD reaction chamber, hydrogenated.Hydrogenation conditions：
Power 300W, chamber pressure 50Torr, total gas flow rate 50sccm, realizes the surface hydriding of single-crystal diamond epitaxial film 6.
8) in one layer of AZ5214 photoresist of sample surfaces spin coating, sample is then heated 90 seconds as 100 DEG C of hot plates, then
Using ultraviolet exposure machine 5s, then sample is soaked in developer solution 60 seconds, source-drain electrode pattern transfer is completed to sample；Use
Electron beam evaporation deposits one layer of 100nm gold in sample surfaces, and experiment condition is：Chamber presses 5 × 10-4Pa, room temperature；Then by sample
Product are soaked in acetone, and sample is peeled off, or obtain source electrode 3, drain electrode 5.
9) in one layer of AZ5214 photoresist of sample surfaces spin coating, sample is then heated 90 seconds as 100 DEG C of hot plates, then
Using ultraviolet exposure machine 5s, then sample is soaked in developer solution 60 seconds, complete source-drain electrode and its between part photoresist
Cover；
10) by step 9) be made sample be placed in UV ozone 20 minutes, formed electrical equipment isolation, then using alcohol, third
Ketone and deionized water are cleaned to sample respectively, and dry up sample with nitrogen, are kept sample surfaces cleaning, are finally prepared
The Buddha's warrior attendant ground mass backgate type hydrogen terminal field-effect transistor of completion.
Claims (9)
1. Buddha's warrior attendant ground mass backgate type hydrogen terminal field-effect transistor, it is characterised in that include diamond substrate (1), back grid
(2), source electrode (3), grid extraction electrode (4), drain electrode (5) and single-crystal diamond epitaxial film (6)；
Diamond substrate (1) is provided with back grid (2), and back grid (2) is provided with grid extraction electrode (4)；Diamond substrate (1)
Upper surface covers one layer of single-crystal diamond epitaxial film (6), and back grid (2) is wrapped in it by single-crystal diamond epitaxial film (6)
In, the top of single-crystal diamond epitaxial film (6) is stretched out on the top of grid extraction electrode (4)；On single-crystal diamond epitaxial film (6)
It is additionally provided with source electrode (3) and drain electrode (5).
2. Buddha's warrior attendant ground mass backgate type hydrogen terminal field-effect transistor according to claim 1, it is characterised in that source electrode (3)
It is located at the both sides for the back grid (2) for not exposing single-crystal diamond epitaxial film (6), source electrode (3) and drain electrode respectively with drain electrode (5)
(5) spacing is more than the width of back electrode (2)；Source electrode (3) and the scope of drain electrode (5) are less than or equal to the back grid (2) not exposed
Scope.
3. Buddha's warrior attendant ground mass backgate type hydrogen terminal field-effect transistor according to claim 1, it is characterised in that source electrode (3)
With drain electrode (5) be arranged on the single-crystal diamond epitaxial film (6) of hydrogenation, and with the single-crystal diamond epitaxial film (6) of hydrogenation
Form Ohmic contact.
4. Buddha's warrior attendant ground mass backgate type hydrogen terminal field-effect transistor according to claim 1, it is characterised in that single crystal diamond
Region on stone epitaxial film (6) surface between source electrode (3), drain electrode (5) and source electrode (3) and drain electrode (5) beyond part is by electricity
Learn isolation processing.
5. Buddha's warrior attendant ground mass backgate type hydrogen terminal field-effect transistor according to claim 1, it is characterised in that back grid
(2) thickness is 0.001-1 μm；Source electrode (3) and drain electrode (5) thickness are 0.07-1 μm；Single-crystal diamond epitaxial film (6) is intrinsic
Diamond；Single-crystal diamond epitaxial film (6) is higher by 0.001-5 μm of back grid (2) in the thickness of back grid upper part,
Resistivity is more than 100M Ω cm, and rms surface roughness is less than 0.5nm, and Raman half-peak breadth is less than 5cm-1, X-ray diffraction half
Peak width is less than 0.05 °.
6. Buddha's warrior attendant ground mass backgate type hydrogen terminal field-effect transistor according to claim 1, it is characterised in that Buddha's warrior attendant stone lining
Bottom (1) is intrinsic diamond material, and rms surface roughness is less than 0.5nm, and Raman half-peak breadth is less than 6cm-1, X-ray diffraction
Half-peak breadth is less than 0.1 °.
7. the preparation method of Buddha's warrior attendant ground mass backgate type hydrogen terminal field-effect transistor, it is characterised in that comprise the following steps：
1) soda acid processing, is carried out to diamond substrate (1), and dried up；
2), back grid (2) is formed on diamond substrate (1) surface；
3), extension obtains single-crystal diamond epitaxial film (6) in diamond substrate (1) and back grid (2)；
4), performed etching using the lithographic technique single-crystal diamond epitaxial film (6) just above to part back grid (2), until
Expose the part back grid (2)；
5), formed in back grid (2) part exposed and draw grid extraction electrode (4)；
6) hydrogenation treatment, is carried out to single-crystal diamond epitaxial film (6), two-dimensional hole gas is obtained under a surface, and to hydrogenation
Single-crystal diamond epitaxial film (6) cleaning afterwards；
7) source electrode (3) and drain electrode (5), are formed on single-crystal diamond epitaxial film (6) surface；Source electrode (3) and drain electrode (5) spacing are big
Width in back electrode (2)；Source electrode (3) and drain electrode (5) are located at the both sides for the back grid (2) not exposed respectively；Source electrode (3) and leakage
The scope of pole (5) is less than or equal to back grid (2) scope do not exposed；
8), on covering single-crystal diamond epitaxial film (6) surface between source electrode (3), drain electrode (5) and source electrode (3) and drain electrode (5)
Point, and electric isolation is carried out to non-cover part, then clean, obtain Buddha's warrior attendant ground mass backgate type field-effect transistor.
8. the preparation method of Buddha's warrior attendant ground mass backgate type hydrogen terminal field-effect transistor according to claim 7, its feature exists
In step 6) in hydrogenation treatment be to obtain Two-Dimensional Hole gas-bearing formation under single-crystal diamond epitaxial film surface；Its carrier concentration
For 2 × 1011-2×1015cm2, mobility is 20-200cm2/ Vs, square resistance is less than 20K Ω/.
9. the preparation method of Buddha's warrior attendant ground mass backgate type hydrogen terminal field-effect transistor according to claim 7, its feature exists
In step 8) in electric isolation be, to the processing of single-crystal diamond epitaxial film (6) exposed surface, and to be more than its resistivity
100MΩ·cm。
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113097330A (en) * | 2021-03-02 | 2021-07-09 | 西安交通大学 | Single crystal diamond ultraviolet detector and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5786604A (en) * | 1994-09-16 | 1998-07-28 | Tokyo Gas Co., Ltd. | Element-isolated hydrogen-terminated diamond semiconductor device and its manufacturing method |
| CN1846312A (en) * | 2003-09-04 | 2006-10-11 | 株式会社日立制作所 | Electrode substrate, thin film transistor, display device and their production |
| CN102903756A (en) * | 2012-09-07 | 2013-01-30 | 中国电子科技集团公司第五十五研究所 | Field effect transistor with diamond metal-insulator-semiconductor structure and preparation method thereof |
| CN104992974A (en) * | 2015-05-15 | 2015-10-21 | 西安交通大学 | Diamond-base double-layer insulated gate dielectric field effect transistor and a preparation method thereof |
-
2017
- 2017-05-11 CN CN201710331449.XA patent/CN107104141B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5786604A (en) * | 1994-09-16 | 1998-07-28 | Tokyo Gas Co., Ltd. | Element-isolated hydrogen-terminated diamond semiconductor device and its manufacturing method |
| CN1846312A (en) * | 2003-09-04 | 2006-10-11 | 株式会社日立制作所 | Electrode substrate, thin film transistor, display device and their production |
| CN102903756A (en) * | 2012-09-07 | 2013-01-30 | 中国电子科技集团公司第五十五研究所 | Field effect transistor with diamond metal-insulator-semiconductor structure and preparation method thereof |
| CN104992974A (en) * | 2015-05-15 | 2015-10-21 | 西安交通大学 | Diamond-base double-layer insulated gate dielectric field effect transistor and a preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113097330A (en) * | 2021-03-02 | 2021-07-09 | 西安交通大学 | Single crystal diamond ultraviolet detector and preparation method thereof |
| CN113097330B (en) * | 2021-03-02 | 2023-12-19 | 西安交通大学 | Single crystal diamond ultraviolet detector and preparation method thereof |
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