CN102891171A - Nitride semiconductor device and manufacturing method thereof - Google Patents
Nitride semiconductor device and manufacturing method thereof Download PDFInfo
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- CN102891171A CN102891171A CN201210253230XA CN201210253230A CN102891171A CN 102891171 A CN102891171 A CN 102891171A CN 201210253230X A CN201210253230X A CN 201210253230XA CN 201210253230 A CN201210253230 A CN 201210253230A CN 102891171 A CN102891171 A CN 102891171A
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Abstract
The invention provides a nitride semiconductor device and a manufacturing method thereof. The nitride semiconductor device of the invention comprises a nitride semiconductor layer, a first isolation film arranged on the nitride semiconductor device, a second isolation film arranged on the first isolation film, a first main electrode and a second electrode separately arranged on the nitride semiconductor layer, and a field plate arranged on the second isolation film between the first main electrode and the second electrode and connected with the nitride semiconductor layer through an opening of the first isolation film and the second isolation film, wherein, at the opening, a first tilt angle formed by a surface of the nitride semiconductor layer and a side face of the first isolation film is smaller than a second tilt angle formed by the surface of the nitride semiconductor layer and an extension line extending a side face of the second isolation film.
Description
Technical field
The invention relates to a kind of nitride semiconductor device and manufacture method thereof with the field plate that joins with nitride semiconductor layer.
Background technology
At lateral type field-effect transistor (the Field-Effect Transistor with AlGaN/GaN heterojunction (hetero junction), FET) etc. in, when closing motion, be applied with in the high-tension situation to source electrode and between draining, produce highfield the end of the drain side of grid (below, be called " drain side end ").From drain electrode to the grid streaming current, so the electrical leakage quantity when suppressing closing motion, perfect condition is the electric field of wishing to relax the drain side end of grid owing to depending on this electric field.
For example, propose to have between grid and drain electrode, form the technology (for example, with reference to patent documentation 1) of field plate at interlayer dielectric.
Patent documentation 1:(Japan) JP 2008-277604 communique
In the situation that nitride semiconductor layer forms electrode, be diaphragm etching and form peristome with being formed at dielectric film on the nitride semiconductor layer.Form electrode in the mode that electrode and nitride semiconductor layer join at diaphragm at this peristome.When forming the peristome of diaphragm, for fear of the damage that nitride semiconductor layer is subject to, adopting has " wet etching " technique or " dry ecthing+wet etching " technique.
At this moment, and different, the shape of the peristome of interlayer dielectric changes according to the fitting tightly property of the technique accuracy of wet etching and interlayer dielectric and photoresist film.This change of shape exerts an influence to leakage current characteristic.Therefore, in order to obtain the stability characteristic (quality) of nitride semiconductor device, present hope is can be with in the situation that high precision forms the peristome shape of interlayer dielectric.
Summary of the invention
In order to reach above-mentioned requirements, the object of the present invention is to provide a kind of nitride semiconductor device and manufacture method thereof, the peristome of the interlayer dielectric on the nitride semiconductor layer is the good shape that also stably forms the concentrated mitigation of electric field accurately.
First aspect present invention provides a kind of nitride semiconductor device, has: nitride semiconductor layer; The first dielectric film, it is arranged on the nitride semiconductor layer; The second dielectric film, it is arranged on the first dielectric film; The first main electrode and the second main electrode, it is separated from each other setting at nitride semiconductor layer; Field plate, it is arranged on the second dielectric film between the first main electrode and the second main electrode, be connected with nitride semiconductor layer via the peristome of being located at the first dielectric film and the second dielectric film, at peristome, the second inclination angle that the extended line that the first inclination angle that the side of the surface of nitride semiconductor layer and the first dielectric film consists of prolongs than the surface of nitride semiconductor layer and side with the second dielectric film consists of is little.
Another aspect of the present invention provides a kind of manufacture method of nitride semiconductor device, for the manufacture of the nitride semiconductor device that has the first main electrode and the second main electrode at interarea, it is characterized in that, comprise the steps: to form the first dielectric film at nitride semiconductor layer; Form the second dielectric film at the first dielectric film; With the part of the first dielectric film and the second dielectric film respectively selectively etching remove, until a part of surface of nitride semiconductor layer exposes, the little mode in the second inclination angle that the extended line that the first inclination angle that consists of with the side of the surface of nitride semiconductor layer and the first dielectric film prolongs than the surface of nitride semiconductor layer and side with the second dielectric film consists of forms peristome; The second dielectric film between the first main electrode and the second main electrode forms field plate, via peristome nitride semiconductor layer is connected with field plate.
According to the present invention, the peristome accuracy that the interlayer dielectric on the nitride semiconductor layer can be provided is stable nitride semiconductor device and the manufacture method thereof that forms the shape of the concentrated mitigation of electric field well.
Description of drawings
Fig. 1 is the constructed profile of structure of the nitride semiconductor device of expression embodiment of the present invention.
Fig. 2 is the schematic diagram of structure of the assembly simulation model of expression nitride semiconductor device.
Fig. 3 (a) and Fig. 3 (b) are the charts of the grid leakage current of expression nitride semiconductor device, and wherein Fig. 3 (a) is the assembly simulation result, and Fig. 3 (b) is the measurement result of the assembly made.
Fig. 4 (a) is the schematic diagram of the Electric Field Distribution of expression grid end to Fig. 4 (c), wherein Fig. 4 (a) is the Electric Field Distribution of component model A, Fig. 4 (b) figure is the Electric Field Distribution of component model B, and Fig. 4 (c) is the Electric Field Distribution of the channel direction of nitride semiconductor layer inside.
Fig. 5 be for the explanation embodiment of the present invention nitride semiconductor device manufacture method profile (one of).
Fig. 6 is the profile (two) for the manufacture method of the nitride semiconductor device of explanation embodiment of the present invention.
Fig. 7 is the profile (three) for the manufacture method of the nitride semiconductor device of explanation embodiment of the present invention.
Fig. 8 is the profile (four) for the manufacture method of the nitride semiconductor device of explanation embodiment of the present invention.
Fig. 9 is the profile (five) for the manufacture method of the nitride semiconductor device of explanation embodiment of the present invention.
Figure 10 is the profile (six) for the manufacture method of the nitride semiconductor device of explanation embodiment of the present invention.
Figure 11 (a) and Figure 11 (b) are the process profiles for the manufacture method of the nitride semiconductor device of explanation comparative example, the shape of the interlayer dielectric after Figure 11 (a) expression dry ecthing wherein, the shape of the interlayer dielectric behind Figure 11 (b) expression wet etching.
Figure 12 is the constructed profile of structure of nitride semiconductor device of the first variation of expression embodiment of the present invention.
Figure 13 is the constructed profile of structure of nitride semiconductor device of the second variation of expression embodiment of the present invention.
Description of symbols
1 nitride semiconductor device 51M source electrode
10 substrates, 52 second main electrodes
20 resilient coatings, 520 peristomes
30 nitride semiconductor layer 52M drain electrodes
30 M nitride semiconductor layers, 53 control electrodes
31 carrier mobility layer 53M gate electrodes
31 MGaN layers, 60 field plate
32 charge carrier supplying layer 60M field plates
32 MAlGaN layer 60S field plates
33 two-dimentional carrier gas 90 photoresists
40 interlayer dielectrics, 400 peristomes
40 M interlayer dielectrics, 400 M peristomes
41 first dielectric films, 410 sides
42 second dielectric films, 420 sides
51 first main electrodes, 71 anode electrodes
510 peristomes, 72 cathode electrodes
Embodiment
Have the knack of for making that skill person can further understand the present invention as one of the technical field of the invention, hereinafter the spy enumerates several preferred embodiments of the present invention, and cooperates appended graphicly, describes constitution content of the present invention and institute in detail and wants the effect reached.Following about graphic description in, can be to the same or similar mark of same or similar portions mark.But the graphic only character for illustrating, the ratio of the relation of its thickness and planar dimension, the length of each one etc. are different with actual conditions.Therefore, concrete size should be judged with reference to following explanation.In addition, obviously in the graphic different part of mutual size relationship and ratio that also comprises each other.Execution mode example shown shown below is used for device and method that technological thought of the present invention is specialized, and technological thought of the present invention is not defined as following content with the shape of component parts, construct, arrange etc.Embodiments of the present invention can be carried out various changes in the protection range of claim.
As shown in Figure 1, the nitride semiconductor device 1 of present embodiment have nitride semiconductor layer 30, be arranged on the first dielectric film 41 on the nitride semiconductor layer 30, be arranged on the second dielectric film 42 on the first dielectric film 41, nitride semiconductor layer 30 be separated from each other setting the first main electrode 51 and the second main electrode 52, be arranged on the field plate (field plate) 60 on the second dielectric film 42 between the first main electrode 51 and the second main electrode 52.
Expression nitride semiconductor device 1 in Fig. 1 example ground is the situation of High Electron Mobility Transistor (High Electron Mobility Transistor, HEMT).That is, at substrate 10 resilient coating 20 is set, is provided with nitride semiconductor layer 30 at resilient coating 20.Nitride semiconductor layer 30 between the first main electrode 51 and the second main electrode 52 is provided with control electrode 53.Field plate 60 is connected with control electrode 53 and is arranged between control electrode 53 and the second main electrode 52.
Field plate 60 is connected with nitride semiconductor layer 30 via peristome 400, and wherein peristome 400 is located at lamination has in the interlayer dielectric 40 of the first dielectric film 41 and the second dielectric film 42.In an embodiment, the control electrode 53 that the end is connected with field plate 60 is arranged on the nitride semiconductor layer 30 in the mode that is embedded in the peristome 400.In addition, the first main electrode 51 and the second main electrode 52 are also joined at the peristome that is formed at interlayer dielectric 40 and nitride semiconductor layer 30.
As shown in Figure 1, peristome 400 is better forms taper.In an embodiment, the second tiltangleθ 2 little modes that the extended line L that the first tiltangleθ 1 that peristome 400 consists of with the side 410 of the surface 300 of nitride semiconductor layer 30 and the first dielectric film 41 prolongs than the surface 300 of nitride semiconductor layer 30 and side 420 with the second dielectric film 42 consists of form.Therefore, in the section perpendicular to surface 300 of nitride semiconductor layer 30, the peristome of the peristome of the first dielectric film 41 and the second dielectric film 42 forms upper base than the trapezoidal shape of lower bottom width.
In an embodiment, the first main electrode 51 is used as source electrode, the second main electrode 52 is used as drain electrode, control electrode 53 uses as grid, the curvature of the transition zone (depletion layer) of the drain side end by field plate 60 control grids will concentrate on the concentrated mitigation of electric field of the drain side end of grid.Therefore, in nitride semiconductor device 1, the leakage current that flows from drain electrode to grid when being suppressed at the closing motion of nitride semiconductor device 1 (below, be called
Grid leakage current
).
In addition, as shown in Figure 1, give inclination by the side that the bottom surface to the field plate 60 that joins with nitride semiconductor layer 30 is connected, can relax electric field.Below, for having verified that by two-dimentional assembly emulation (2-dimensional device simulation) example that electric field that the bottom angled that makes field plate 60 is brought relaxes is illustrated.
Fig. 2 represents the structure for the component model of two-dimentional assembly emulation (device model).As nitride semiconductor layer 30M, the GaN layer 31M that uses in non-doping is provided with that Al consists of 0.26, thickness is the laminated structure of the AlGaN layer 32M of 25nm.Be provided with source electrode 51M, drain electrode 52M, gate electrode 53M at nitride semiconductor layer 30M.Gate electrode 53M length is 2 μ m, and the distance between gate electrode 53M and the drain electrode 52M is 12 μ m.Interlayer dielectric 40M on the nitride semiconductor layer 30M is silica (SiOx) film of thickness 500nm.As shown in Figure 2, the field plate 60M that will be connected with gate electrode 53M is arranged on drain side, at peristome 400M, the side of interlayer dielectric 40M is arranged inclination.In addition, consider that the assembly of reality can be made scope, set two kinds of different component model A, B of tiltangleθ.The tiltangleθ of component model A is larger than the tiltangleθ of component model B.
Electric leakage of the grid properties of flow during Fig. 3 (a), Fig. 3 (b) expression closing motion.Transverse axis is drain electrode-voltage between source electrodes Vds, and the longitudinal axis is grid leakage current Ig.Voltage Vgs is-6V between gate-to-source.Fig. 3 (a) is analog result, and Fig. 3 (b) is the measurement result of the assembly of actual fabrication.Characteristic A is the characteristic of component model A, and characteristic B is the characteristic of component model B.Shown in Fig. 3 (a), the little component model B of tiltangleθ is than component model A suppressor grid leakage current Ig more.Shown in Fig. 3 (b), in the assembly of reality, also has same tendency.
The Electric Field Distribution of the grid 53M end in Fig. 4 (a) and Fig. 4 (b) figure under the expression drain voltage 200V.Fig. 4 (a) is the Electric Field Distribution of component model A, and Fig. 4 (b) figure is the Electric Field Distribution of component model B.In addition, the Electric Field Distribution of the channel direction of the surperficial dark 5 μ m of Fig. 4 (c) expression distance A lGaN layer 32M.Characteristic A is the characteristic of component model A, and characteristic B is the characteristic of component model B.Fig. 4 (a) to the transverse axis of Fig. 4 (c) be on the nitride semiconductor layer 30M interlayer dielectric 40M apart from the end apart from d, the longitudinal axis of Fig. 4 (c) is the size of electric field.To shown in Fig. 4 (c), component model B relaxes the electric field of grid 53M end more than component model A such as Fig. 4 (a).
As mentioned above, for the concentrated mitigation with electric field comes the suppressor grid leakage current, effectively the bottom end at the peristome 400M that is formed at interlayer dielectric 40M arranges tiltangleθ, in addition, has confirmed that tiltangleθ is less, and the effect that electric field relaxes is larger.But, in the situation that tiltangleθ is reduced, the very large problem that becomes of the area with peristome 400M.
Particularly, the thickness of interlayer dielectric is thicker, and the area of the peristome of interlayer dielectric upper surface is larger, has the problem of the area increase of nitride semiconductor device.On the other hand, based on following reason, wish the thickness of interlayer dielectric is thickened.
In order to obtain the technological limits (process margin) in the semiconductor fabrication step, form each electrode with the area larger than the area of the peristome in the interlayer dielectric upper surface, therefore, form each electrode and nitride semiconductor layer across interlayer dielectric and relative zone (below, be called
Flange part
).This flange part has the effect as field plate.At this moment, known, the field plate that is electrically connected with drain electrode worsens the current collapse phenomenon.Therefore, in order to reduce flange part in the drain electrode as the effect of field plate, need to thicken the thickness of interlayer dielectric.But, in situation about the thickness of interlayer dielectric being thickened for the current collapse phenomenon is worsened, if relax electric field and the inclination angle of the side of interlayer dielectric reduced, then the area of nitride semiconductor device increases.
To this, in nitride semiconductor device shown in Figure 11, to be arranged at interlayer dielectric 40 on the nitride semiconductor layer 30 and form the double-layer structural of the first dielectric film 41 and the second dielectric film 42, and the second tiltangleθ 2 of consisting of of the extended line L that prolongs with the surface 300 of nitride semiconductor layer 30 and side 420 with the second dielectric film 42 is formed with peristome 400 than the first tiltangleθ 1 large mode of side 410 formations of the surface 300 of nitride semiconductor layer 30 and the first dielectric film 41.
Therefore, in nitride semiconductor device 1, by reducing as much as possible the first tiltangleθ 1, improve and relax the effect that electric field is concentrated, and by making the second tiltangleθ 2 to the first tiltangleθs 1 large, the area that can suppress peristome 400 increases.Concentrate in order to relax electric field, the first tiltangleθ 1 for example is below 45 °, more preferably 10 °~15 °.For the area that suppresses nitride semiconductor device 1 increases, the second tiltangleθ 2 is better.For example, decide the second tiltangleθ 2 according to the hope area of peristome 400, the hope thickness of interlayer dielectric 40 etc.
As described above, in the nitride semiconductor device 1 of embodiment of the present invention,, side effective via the mitigation for electric field has the peristome 400 that relaxes and field plate 60 and nitride semiconductor layer 30 joined.In addition, the side of the first dielectric film 41 of the first tiltangleθ 1 by having mitigation and side with second dielectric film 42 of second tiltangleθ 2 larger than the first tiltangleθ 1 consist of the laterally inclined of peristome 400.Thus, according to nitride semiconductor device 1, the area of peristome 400 is increased, relax electric field, with the suppressor grid leakage current.
In addition, as the nitride semiconductor layer 30 of the nitride semiconductor device 1 of HEMT, as shown in Figure 1, for forming the structure of carrier mobility layer 31 lamination of heterojunctions with charge carrier supplying layer 32 with charge carrier supplying layer 32.
The carrier mobility layer 31 that is arranged on the resilient coating 20 forms the non-Doped GaN that for example is not added with impurity crystals growth of heap of stone by long-pending (metal organic chemical vapor deposition, the MOCVD) method etc. in organic metal gas phase Shen.So-called non-doping refers to not to be to add impurity intentionally.
Large and lattice constant (lattice constant) consists of than carrier mobility layer 31 little nitride-based semiconductor than carrier mobility layer 31 by band gap (energy gap) to be arranged on charge carrier supplying layer 32 on the carrier mobility layer 31.As charge carrier supplying layer 32, can adopt the Al of non-doping
XGa
1- XN.
Charge carrier supplying layer 32 is with such as the crystals growth of heap of stone of mocvd method etc. and be formed on the carrier mobility layer 31.Because charge carrier supplying layer 32 is different with the lattice constant of carrier mobility layer 31, so produce the piezoelectric polarization (piezoelectric polarization) that is caused by lattice strain.The spontaneous polarization that crystallization by this piezoelectric polarization and charge carrier supplying layer 32 has, near the carrier mobility layer 31 heterojunction produces highdensity charge carrier, and forms the two-dimentional carrier gas layer 33 as current path (passage).
Below, use Fig. 5 to Figure 10 that the manufacture method of the nitride semiconductor device 1 of embodiment of the present invention is described.At this, to nitride semiconductor device shown in Figure 11 example ground explanation manufacture method.In addition, below the manufacture method of the nitride semiconductor device of explanation is a kind of execution mode wherein, this area has knows that usually the knowledgeable can understand, and among the embodiment therein, the various manufacture methods that in addition nitride semiconductor device can see through are made.
(I) as shown in Figure 5, form resilient coating 20 at substrate 10.And then, on resilient coating 20, sequentially make carrier mobility layer 31 and charge carrier supplying layer 32 crystals growths of heap of stone, form nitride semiconductor layer 30.
(II) then, as shown in Figure 6, form the first dielectric film 41 at charge carrier supplying layer 32.And then form the second dielectric film 42 at whole of the first dielectric film 41.In addition, with regard to the rate of etch of the isotropic etching when forming with regard to peristome described later 400, select at least the material of the first dielectric film 41 and the second dielectric film 42 in the second dielectric film 42 to the first dielectric films 41 large modes.
(III) example such as little shadow mode as shown in Figure 7, form peristome 510,520 in the precalculated position of the first dielectric film 41 and the second dielectric film 42.For example, take photoresist film as shielding the first dielectric film 41 and 42 etchings of the second dielectric film that predetermined set forms the first main electrode 51 and the second main electrode 52 positions are removed.
(IV) with imbed peristome 510,520 mode forms metal film at the second dielectric film 42.Afterwards, use lithography process etc. that this metal film is carried out patterning.Thus, as shown in Figure 8, form the first main electrode 51 imbed peristome 510 and to arrange, imbed peristome 520 and the second main electrode 52 of arranging.
(V) with photoresist film 90 as etch shield, utilize for example dry etching process of anisotropic etching, second dielectric film 42 etching on thickness direction of wanting formation control electrode 53 positions is removed.At this moment, as shown in Figure 9, in preferred embodiment of the present invention, the part of the second dielectric film 42 also remains on the first dielectric film 41, this be because, when in follow-up technique, using wet etching that 41 etchings of the first dielectric film are removed, if under the not residual state that the second dielectric film 42 arranged etching the first dielectric film 41, then easily produce section in the side 410 of the first dielectric film 41 poor, the inclined plane probably can not have the same inclination.Therefore, in anisotropic etching, it is desirable to the second dielectric film 42 remove to film thickness direction midway.For example, with residual the second dielectric film 42 of the thickness about 100nm~200nm.
(VI) with photoresist film 90 as etch shield, utilize for example wet etching process of isotropic etching, so that remainder and first dielectric film 41 of the second dielectric film 42 are removed, until expose on a part of surface of nitride semiconductor layer 30.In one embodiment of the invention, in these tropism's etchings, the rate of etch of the first dielectric film 41 is less than the rate of etch of the second dielectric film 42.Therefore, by compared to the rate of etch of the second dielectric film 42 isotropic etching less to the rate of etch of the first dielectric film 41, remove the second dielectric film 42 and the first dielectric film 41.Therefore, as shown in figure 10, its etching result can form peristome 400, and the second tiltangleθ 2 that the extended line L that prolongs than the surface 300 of nitride semiconductor layer 30 and side 420 with the second dielectric film 42 of the first tiltangleθ 1 of consisting of of the side 410 of the surface 300 of nitride semiconductor layer 30 and the first dielectric film 41 consists of is little.
(VII) after photoresist film 90 is removed, form metal film in the mode of imbedding peristome 400 at the second dielectric film 42, this metal film is carried out patterning.Thus, together form field plate 60 at peristome 400 with mode and the control electrode 53 that joins with nitride semiconductor layer 30.In addition, also can use partition method (lift-off) formation control electrode 53 and field plate 60.By above explanation, finish nitride semiconductor device shown in Figure 11.
In one embodiment of the invention, except the rate of etch of the isotropic etching of the first dielectric film 41 than the little condition of the second dielectric film 42, the first dielectric film 41 and the second dielectric film 42 there is no any special condition.Therefore, the first dielectric film 41, the second dielectric film 42 can adopt the silica (SiO that is typically used as interlayer dielectric
X) film, silicon nitride (SiN) film, tetraethoxysilane (TEOS) film, be added with boron-phosphorosilicate glass (the borophosphosilicate glass of boron, phosphorus, BPSG) film, be added with phosphorosilicate glass (phosphosilicate glass, the PSG) film of phosphorus etc.
For example, the first dielectric film 41 uses bpsg film, and the second dielectric film 42 uses SiO
XFilm or TEOS film.Perhaps, the first dielectric film 41 uses the TEOS film, and the second dielectric film uses SiO
XFilm.
In another one embodiment of the present invention, the first dielectric film 41 and the second dielectric film 42 also can use same material.At this moment, if with the rate of etch of the first dielectric film 41 than the little mode of the second dielectric film 42 with the first dielectric film 41 upgradings.For example, after having formed the first dielectric film 41, reduce by the rate of etch with the first dielectric film 41 such as heat treatment.Then, on this first dielectric film 41, will form as the second dielectric film 42 with the film of the first dielectric film 41 same materials.
The thickness of the first dielectric film 41 so long as the thickness that can positively form the first tiltangleθ 1 with the angle of hope get final product, different according to the technique accuracy, for example be about 100nm~200nm.Wherein, in the mode that does not expose on the surface 300 of nitride semiconductor layer 30 when the dry ecthing, determine the thickness of the first dielectric film 41 with a specific limit (margin).The thickness of the second dielectric film 42 is set take the total film thickness of the first dielectric film 41 and the second dielectric film 42 as the mode of desirable interlayer thickness.For example, the thickness of the second dielectric film 42 is about 250nm~1000nm.
The difference of the rate of etch of thickness, the first dielectric film 41 and the second dielectric film 42 that requires according to each electrode etc. decides the thickness of the first dielectric film 41 and the second dielectric film 42.
In addition, in the situation that the first dielectric film 41 or the second dielectric film 42 have used bpsg film, there is bpsg film in distance nitride semiconductor layer 30 nearer positions.Therefore, can prevent impact from the ion that swims of outside etc. by bpsg film, and the current potential in the nitride semiconductor device 1 can guarantee to move the time is stable.
The first main electrode 51 and the second main electrode 52 are by forming with the metal of nitride semiconductor layer 30 low resistance contact (nurse difficult to understand contacts).The first main electrode 51 and the second main electrode 52 can adopt such as aluminium (Al), titanium (Ti) etc.Perhaps as the laminate structure of Ti and Al, form the first main electrode 51 and the second main electrode 52.Control electrode 53, field plate 60 are such as adopting nickel gold (NiAu) etc.
Ground as described above is according to the manufacture method of the nitride semiconductor device 1 of embodiment of the present invention, can be accurately good and stably form that electric field to the drain side end of control electrode 53 effectively relaxes, end and have the field plate 60 that relaxes the bottom that tilts.Particularly, carry out isotropic etching by the state that exists with the first dielectric film 41 and the second dielectric film 42 peristome 400 after to isotropic etching, can stably obtain cause in the peristome 400 of the shape of the etching rate variance of the first dielectric film 41 and the second dielectric film 42.
Compare with the situation that only forms peristome 400 by the isotropic etching of wet etching, with anisotropic etching and isotropic etching combination, can accurately form well peristome 400 as described above.That is, can suppress the expansion of the opening size of peristome 400, so that fine design, the microfabrication of peristome 400 are easy.
In addition, be in the situation of one deck at the lamination dielectric film on the nitride semiconductor layer 30, be difficult to make the inclination of peristome 400 to relax.For example, shown in Figure 11 (a) by with photoresist film 90 as the shielding anisotropic etching lamination dielectric film 40 etching on film thickness direction is removed to midway, then shown in Figure 11 (b), by isotropic etching 40 etchings of lamination dielectric film are removed in the situation about exposing to the surface of nitride semiconductor layer 30, can not make the laterally inclined mitigation of peristome 400.If will be with the laterally inclined mitigation of peristome 400, then the area of peristome 400 increases, nitride semiconductor device 1 maximization that becomes.
Therefore, as the manufacture method of the nitride semiconductor device 1 of embodiment of the present invention, by the first dielectric film 41 that rate of etch is different and the second dielectric film 42 laminations, the area of peristome 400 is increased, just can make the inclination mitigation of side of the bottom of peristome 400.Thus, can make the nitride semiconductor device 1 of electric field being concentrated mitigation and suppressor grid leakage current.Based on the reason that does not make current collapse phenomenon deterioration etc. and make in the thicker situation of the thickness of lamination dielectric film 40, the structure of nitride semiconductor device 1 is effective especially.
In addition, according to manufacture method described above, can utilize general equipment, technology to make nitride semiconductor device 1, need not the technology of special device and height.
In addition, also can be in the bottom surface of the peristome 400 that control electrode 53 is set, a part of etching with the top of nitride semiconductor layer 30 forms the gate recess structure with nitride semiconductor device 1.Thus, can realize normal pass (normally off) characteristic.
(the first variation)
As shown in figure 12, also can between control electrode 53 and the second main electrode 52, at nitride semiconductor layer 30 field plate 60S be set.Field plate 60S and the first main electrode 51 are electrically connected.
By field plate 60S being arranged on control electrode 53(grid) and the second main electrode 52(drain electrode) between, further relax the electric field of the drain side end of grid and concentrate.At this moment, as shown in figure 12, peristome at the lamination dielectric film 40 of imbedding field plate 60S, with peristome 400 shown in Figure 1 similarly, make the laterally inclined of the first dielectric film 41 and the second dielectric film 42, and first tiltangleθ 1 on the inclined-plane of the second tiltangleθ 2 to the first dielectric films 41 on the inclined-plane of the second dielectric film 42 is large.Therefore, in nitride semiconductor device shown in Figure 12 1, the area of nitride semiconductor device 1 is increased and the mitigation electric field, but the suppressor grid leakage current.
In addition, in nitride semiconductor device shown in Figure 12 1, the side relative with the second main electrode 52 of control electrode 53 lived by field plate 60S crested.Therefore, by field plate 60S and the first main electrode (source electrode) are electrically connected, can reduce the miller capacitance (Miller capacitance) of nitride semiconductor device 1.That is, by field plate 60S being arranged between grid and the drain electrode, reduce the electric capacity between grid and drain electrode.Thus, can make nitride semiconductor device 1 high speed motion.
(the second variation)
Figure 13 represents to be formed with as Schottky diode (Schottky Barrier Diode, SBD) example of nitride semiconductor device 1.In nitride semiconductor device shown in Figure 13 1, with the situation of HEMT similarly, for example consist of nitride semiconductor layer 30 by the carrier mobility layer 31 that consisted of by GaN with by the charge carrier supplying layer 32 that the AlGaN film consists of.And, on nitride semiconductor layer 30, as the anode electrode 71 of the first main electrode with as the setting that is separated from each other of the cathode electrode 72 of the second main electrode.
Between anode electrode 71 and charge carrier supplying layer 32, form Schottky junction (schottky junction), between cathode electrode 72 and charge carrier supplying layer 32, form nurse junction difficult to understand (Ohmic junction).Thus, via two-dimentional carrier gas layer 33, electric current flows between anode electrode 71 and cathode electrode 72.
In the described nitride semiconductor device 1 of Figure 13, the end of cathode electrode 72 sides of field plate 60S and anode electrode 71 (below, be called " cathode side end ") connected and be arranged on the lamination dielectric film 40.The curvature of the transition zone of the cathode side end by field plate 60 control anode electrodes 71 is concentrated the electric field of the cathode side end that concentrates on anode electrode 71 and is relaxed.Therefore, in the described nitride semiconductor device 1 of Figure 13, the leakage current when suppressing closing motion.
At this moment, as shown in figure 13, the peristome 400 that joins at the anode electrode 71 that is connected with field plate 60 and nitride semiconductor layer 30, with peristome 400 shown in Figure 1 similarly, give inclination to the side of the first dielectric film 41 and the second dielectric film 42.That is the second tiltangleθ 2 little modes that the extended line L that the first tiltangleθ 1 that, consists of with the side 410 of the surface 300 of nitride semiconductor layer 30 and the first dielectric film 41 prolongs than the surface 300 of nitride semiconductor layer 30 and side 420 with the second dielectric film 42 consists of are formed with peristome 400.
Therefore, in nitride semiconductor device shown in Figure 13 1, the area of nitride semiconductor device 1 is increased, can relax electric field, and the suppressor grid leakage current.
(other execution mode)
As mentioned above, the present invention is illustrated by execution mode, but consist of discussion and graphic being not intended to limit the present invention of its disclosed part, this area has knows that usually the knowledgeable can easily expect various alternate embodiments, embodiment and application technology by the disclosure.
For example, also field plate 60 can be connected with the first main electrode 51 or control electrode 53 fixed electrode in addition, that supply with the voltage that is fixed as certain value.That is, by field plate 60 is set as the certain potentials that can be considered GND with exchanging, can relaxes the electric field of the end of control electrode 53 and concentrate.Also field plate 60 can be connected with GND.
Like this, the present invention obviously comprises in the specification the various execution modes of not record etc.Therefore, technical scope of the present invention is only limited by the specific item of the invention in the protection range of claim.
The above only is the present invention's preferred embodiment, and all equalizations of being done according to the present patent application claim change and modify, and all should belong to the present invention's covering scope.
Claims (6)
1. nitride semiconductor device comprises:
The mononitride semiconductor layer;
One first dielectric film is arranged on this nitride semiconductor layer;
One second dielectric film is arranged on this first dielectric film;
One first main electrode and one second main electrode are arranged on this nitride semiconductor layer with being separated from each other; And
One field plate, be arranged on this second dielectric film between this first main electrode and this second main electrode, and be connected with this nitride semiconductor layer via a peristome of being located in this first dielectric film and this second dielectric film, wherein in this peristome, one first inclination angle that the side of the surface of this nitride semiconductor layer and this first dielectric film consists of is less than one second inclination angle of the extended line formation that the surface of this nitride semiconductor layer and side with this second dielectric film prolong.
2. nitride semiconductor device as claimed in claim 1, wherein the rate of etch of this first dielectric film is less than the rate of etch of this second dielectric film.
3. nitride semiconductor device as claimed in claim 1 or 2, also comprise the control electrode on this nitride semiconductor layer that is arranged between this first main electrode and this second main electrode, this field plate is connected with this control electrode and is arranged between this control electrode and this second main electrode.
4. nitride semiconductor device as claimed in claim 1 or 2, also comprise the control electrode on this nitride semiconductor layer that is arranged between this first main electrode and this second main electrode, this field plate is arranged on this nitride semiconductor layer between this control electrode and this second main electrode, and this field plate is electrically connected with this first main electrode.
5. nitride semiconductor device as claimed in claim 1 or 2, wherein this first main electrode connects with either party and this field plate in being connected the second main electrode.
6. the manufacture method of a nitride semiconductor device, for the manufacture of the nitride semiconductor device that has one first main electrode and one second main electrode at interarea, wherein this manufacturing step comprises:
Form one first dielectric film at the mononitride semiconductor layer;
Form one second dielectric film at this first dielectric film;
The part of this first dielectric film and this second dielectric film is selectively removed, until a part of surface of this nitride semiconductor layer exposes, one first inclination angle that consists of with the side of the surface of this nitride semiconductor layer and this first dielectric film forms a peristome than the little mode in one second inclination angle of the extended line formation that the surface of this nitride semiconductor layer and side with this second dielectric film prolong; And
This second dielectric film between this first main electrode and this second main electrode forms a field plate, via this peristome this nitride semiconductor layer is connected with this field plate.
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