CN102881601B - A kind of high-voltage diode package fabrication process - Google Patents
A kind of high-voltage diode package fabrication process Download PDFInfo
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- CN102881601B CN102881601B CN201210394355.4A CN201210394355A CN102881601B CN 102881601 B CN102881601 B CN 102881601B CN 201210394355 A CN201210394355 A CN 201210394355A CN 102881601 B CN102881601 B CN 102881601B
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Abstract
The present invention discloses a kind of high-voltage diode package fabrication process, first by high-voltage diode chip through acid corrosion, weld in high temperature chain-conveyer furnace with through being coated with the lead-in wire of fluxing agent, it is immersed in after welding in activator, utilize ultrasonic cleaning soldering flux, without the need to leading to into hydrogen in welding process, avoid the personal injury accident owing to hydrogen explosion causes, this packaging process is without any potential safety hazard, and the product performance after processing are stable, reliable.
Description
Technical field
The present invention relates to a kind of high-voltage diode package fabrication process.
Background technology
Encapsulation is one of important step of diode production technique, and effect is the electrical parameter reaching needs by certain method after being processed by chip, and in order to the element produced can have, unified specification is convenient installs simultaneously. May there is following shortcoming in traditional high-voltage diode encapsulation making processes: 1. welding process is led to into hydrogen, it is easy to cause combustion of hydrogen to explode, and causes security incident; 2. lead-in wire and chips welding are insecure, it is easy to come off; 3. chip surface is unclean, leaves residue.
Summary of the invention
It is an object of the invention to provide a kind of high-voltage diode package fabrication process, the product performance of this explained hereafter are stable, reliable.
In order to solve the problems of the technologies described above, the technical solution used in the present invention is: a kind of high-voltage diode package fabrication process, it is characterised in that: comprise the following steps:
(1) lead-in wire being loaded graphite boat, brushing soldering flux on lead-in wire ailhead, chip, after acid corrosion, is filled into the graphite boat loading lead-in wire, welds in high temperature chain-conveyer furnace, leads to into high pure nitrogen in welding process;
(2) film of flux residue is gone to process the product after above-mentioned welding: first product activator to be soaked 120s, then, ultrasonic cleaning product is adopted to remove surface welding-assistant residue, after having cleaned, repeat above-mentioned activator soaking step, finally dividing twice immersion with dehydrated alcohol, the time is 120s respectively;
(3) product processed through step (2) is placed in thermostatic bath and dries 200s, thermostatic bath leads to into nitrogen, prevent product to be oxidized;
(4) product dried through nitrogen by hydrofluoric acid treatment after, then through caustic corrosion, remove chip surface residual impurity further;
(5) glue on the chip surface, hot setting, shaping through plastic packaging, complete to encapsulate to obtain finished product.
Further, soldering flux described in step (1) is rosin, Virahol and succsinic acid mixture.
Further, described in step (2) during ultrasonic cleaning, ultrasonic frequency is 40kHz, and the time is 120s.
Further, activator described in step (2) mixes by Virahol, dehydrated alcohol and acetone, and its mixed weight is than being 7:7:1.
Further, thermostatic bath bake out temperature 50 DEG C ~ 60 DEG C described in step (3).
Further, hydrofluoric acid concentration described in (4) is 5% suddenly.
It is an advantage of the current invention that:
1. leading to into high pure nitrogen in welding process of the present invention, do not re-use hydrogen, therefore, there is not potential safety hazard in operating process;
2. use soldering flux during welding, make the more firm of lead-in wire and chips welding;
3. soak and ultrasonic cleaning with activator after having welded, it is ensured that chip surface is clean, makes the finished product stable and reliable for performance.
Embodiment
In order to make the public can fully understand the technical spirit of the present invention and useful effect; the specific embodiment of the present invention will be described by applicant below in detail; but the description of embodiment is not the restriction to technical scheme by applicant, any changing in the form rather than substance according to present inventive concept all should be considered as protection scope of the present invention.
A kind of high-voltage diode package fabrication process, comprises the following steps:
(1) lead-in wire is loaded graphite boat, brushing rosin, Virahol and the mixed soldering flux of succsinic acid on lead-in wire ailhead, chip, after acid corrosion, is filled into the graphite boat loading lead-in wire, high temperature chain-conveyer furnace welds, welding process is led to into high pure nitrogen;
(2) film of flux residue is gone to process the product after above-mentioned welding: first product activator to be soaked 120s, activator is mixed by Virahol, dehydrated alcohol and acetone, its mixed weight, than being 7:7:1, then, adopts ultrasonic cleaning product to remove surface welding-assistant residue, ultrasonic frequency is 40kHz, time is 120s, after having cleaned, repeats above-mentioned activator soaking step, finally dividing twice immersion with dehydrated alcohol, the time is 120s respectively;
(3) product processed through step (2) being placed in thermostatic bath and dry 200s, bake out temperature is 50 DEG C ~ 60 DEG C, leads to into nitrogen in thermostatic bath, prevents product to be oxidized;
(4) product dried through nitrogen by 5% hydrofluoric acid treatment after, then through caustic corrosion, remove chip surface residual impurity further;
(5) glue on the chip surface, hot setting, shaping through plastic packaging, complete to encapsulate to obtain finished product.
The product performance adopting packaging process of the present invention to manufacture are stable, reliable.
Claims (1)
1. a high-voltage diode package fabrication process, it is characterised in that: comprise the following steps:
(1) lead-in wire being loaded graphite boat, brushing soldering flux on lead-in wire ailhead, chip, after acid corrosion, is filled into the graphite boat loading lead-in wire, welds in high temperature chain-conveyer furnace, leads to into high pure nitrogen in welding process;
(2) film of flux residue is gone to process the product after above-mentioned welding: first product activator to be soaked 120s, then, ultrasonic cleaning product is adopted to remove surface welding-assistant residue, after having cleaned, repeat above-mentioned activator soaking step, finally dividing twice immersion with dehydrated alcohol, the time is 120s respectively;
(3) product processed through step (2) is placed in thermostatic bath and dries 200s, thermostatic bath leads to into nitrogen, prevent product to be oxidized;
(4) product dried through nitrogen by hydrofluoric acid treatment after, then through caustic corrosion, remove chip surface residual impurity further;
(5) glue on the chip surface, hot setting, shaping through plastic packaging, complete to encapsulate to obtain finished product;
Soldering flux described in step (1) is rosin, Virahol and succsinic acid mixture;
Described in step (2) during ultrasonic cleaning, ultrasonic frequency is 40kHz, and the time is 120s;
Activator described in step (2) mixes by Virahol, dehydrated alcohol and acetone, and its mixed weight is than being 7:7:1;
Thermostatic bath bake out temperature 50 DEG C ~ 60 DEG C described in step (3);
Hydrofluoric acid concentration described in step (4) is 5%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210394355.4A CN102881601B (en) | 2012-10-17 | 2012-10-17 | A kind of high-voltage diode package fabrication process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210394355.4A CN102881601B (en) | 2012-10-17 | 2012-10-17 | A kind of high-voltage diode package fabrication process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102881601A CN102881601A (en) | 2013-01-16 |
| CN102881601B true CN102881601B (en) | 2016-06-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201210394355.4A Active CN102881601B (en) | 2012-10-17 | 2012-10-17 | A kind of high-voltage diode package fabrication process |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102263140A (en) * | 2011-08-10 | 2011-11-30 | 山东沂光电子股份有限公司 | Plastic package power diode and manufacturing technology thereof |
| CN102513633A (en) * | 2011-11-30 | 2012-06-27 | 常州星海电子有限公司 | Soldering method of ABS (Acrylonitrile Butadiene Styrene) rectifier bridge |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10342242A1 (en) * | 2003-09-11 | 2005-04-07 | Behr Gmbh & Co. Kg | Soldering piece, soldering and heat exchanger |
| CN102237284B (en) * | 2010-05-05 | 2012-12-26 | 如皋市易达电子有限责任公司 | Novel method for manufacturing diode |
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2012
- 2012-10-17 CN CN201210394355.4A patent/CN102881601B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102263140A (en) * | 2011-08-10 | 2011-11-30 | 山东沂光电子股份有限公司 | Plastic package power diode and manufacturing technology thereof |
| CN102513633A (en) * | 2011-11-30 | 2012-06-27 | 常州星海电子有限公司 | Soldering method of ABS (Acrylonitrile Butadiene Styrene) rectifier bridge |
Non-Patent Citations (1)
| Title |
|---|
| Sn-Cu亚共晶无铅钎料用高活性钎剂的研制;赵静;《中国优秀硕士学位论文数据库，工程科技I辑》;20110515;第B022卷(第5期);论文正文第10页第1-18行 * |
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