CN102867782A - Method for correcting electronically programmable fuse wire device - Google Patents
Method for correcting electronically programmable fuse wire device Download PDFInfo
- Publication number
- CN102867782A CN102867782A CN2012103436352A CN201210343635A CN102867782A CN 102867782 A CN102867782 A CN 102867782A CN 2012103436352 A CN2012103436352 A CN 2012103436352A CN 201210343635 A CN201210343635 A CN 201210343635A CN 102867782 A CN102867782 A CN 102867782A
- Authority
- CN
- China
- Prior art keywords
- programmable fuse
- fuse
- electronic programmable
- wire device
- fuse wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention discloses a method for correcting an electronically programmable fuse wire device, which is suitable for an electronically programmable fuse wire device. The electronically programmable fuse wire device comprises two polysilicon electrodes and an electronically programmable fuse wire connected between the electrodes, wherein the electrodes and the electronically programmable fuse wire are positioned on a substrate; sub-resolution additional patterns are added at both sides of the electronically programmable fuse wire; and the sub-resolution additional patterns are used for changing the characteristic dimension of the electronically programmable fuse wire. The invention has the following beneficial effects: by adding the sub-resolution additional patterns, different characteristic dimensions can be formed in the polysilicon fuse wire, so that different current densities can be formed, and the electric migration phenomenon of the electronically programmable fuse wire can be enhanced, thereby enhancing the fusing performance of the electronically programmable fuse wire device.
Description
Technical field
The present invention relates to electronic programmable fuse technique field, be specifically related to a kind of modification method of electronic programmable fuse.
Background technology
Traditional fuse (Fuse) mainly contains three kinds: the metal fuse (Laser Fuse) that blows with laser, or the metal fuse (Metal Fuse) and the polysilicon fuse (Poly Fuse) that blow with large electric current, existing commercially available prod is because of processing procedures such as use laser blow, large electric current blows, often face the not problem such as reversibility, such as Metal Fuse or Poly is Fuse, need to carry out with larger electric current, will be subject to the design of recording device and pin; And Laser Fuse only can carry out before chip package, and range of application is limited, and the yield of processing procedure is lower.
Electronic programmable fuse (Electrically Programming Fuse, eFuse) is based on the electromigration principle and compiles.Compare with traditional fuse, electromigration characteristic can generate much smaller fuse-wires structure, and the compiling voltage that it adopts is generally at 2.5V, and tens milliamperes of DC pulse that continue several milliseconds just are enough to the single fuse of programming.
Common electronic programmable fuse-wire device domain as shown in Figure 1,2 and 3 are respectively two electrodes among the figure, 1 is two interelectrode polysilicon fuses, 4 is the contact hole on the electrode.When between two electrodes in addition during high current, under the effect of higher current density, relevant atom will move along the electron motion direction, forms the cavity, finally opens circuit, and this phenomenon is exactly ELECTROMIGRATION PHENOMENON.The electronic programmable fuse-wire device is exactly the ELECTROMIGRATION PHENOMENON of utilizing in the polysilicon fuse, so that polysilicon fuse before fusing and the resistance after the fusing change (usually the resistance after the fusing is 10 ~ 1000 times of fusing resistance before), thereby reach programmable purpose.
The ELECTROMIGRATION PHENOMENON of electronic programmable fuse-wire device and the electric current distribution in the polysilicon fuse are closely related, when the electric current distribution in the polysilicon fuse in the time of inhomogeneous (namely having current-density gradient), relevant atom is subjected to the electronics wind behaviour different two electrode direction, thereby ELECTROMIGRATION PHENOMENON more easily occurs, so that polysilicon fuse more easily fuses.The present invention namely utilizes this principle that the electronic programmable fuse-wire device is carried out optical proximity correction (Optical Proximity Correction, OPC), strengthens the fusing performance of electronic programmable fuse-wire device.
Summary of the invention
In view of the improvement to above-mentioned prior art, the invention provides a kind of modification method of electronic programmable fuse-wire device
A kind of modification method of electronic programmable fuse-wire device, be applicable to the electronic programmable fuse-wire device, described electronic programmable fuse-wire device comprises two polysilicon electrodes and is connected in electronic programmable fuse between the described electrode, above-mentioned electrode and electronic programmable fuse are positioned on the substrate, wherein, increase inferior resolution additional patterns in electronic programmable fuse both sides, described inferior resolution additional patterns is used for changing the characteristic size of described electronic programmable fuse.
Preferably, the modification method of electronic programmable fuse-wire device wherein, uses polysilicon fuse as described electronic programmable fuse.
Preferably, the modification method of electronic programmable fuse-wire device, wherein, the resolution of described inferior resolution additional patterns is lower than the resolution of described electronic programmable fuse and can not be resolved by mask aligner.
Preferably, the modification method of electronic programmable fuse-wire device wherein, adopts the mode of symmetric arrays that described inferior resolution additional patterns is arranged on the substrate of described polysilicon fuse both sides.
Preferably, the modification method of electronic programmable fuse-wire device wherein, adopts mode of arranging in a row that the described inferior resolution additional patterns of homonymy is arranged on the substrate of described polysilicon fuse.
Preferably, the modification method of electronic programmable fuse-wire device, wherein, the spacing between the described additional patterns of the width definition homonymy that employing is default.
Beneficial effect of the present invention:
By increasing inferior resolution additional patterns, in polysilicon fuse, form different characteristic sizes, thereby form different current densities, strengthen the ELECTROMIGRATION PHENOMENON of electronic programmable fuse, and then strengthened the fusing performance of electronic programmable fuse-wire device.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, the below will do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art, apparently, accompanying drawing in the following describes only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing:
Fig. 1 is the domain of common electronic programmable fuse-wire device;
Fig. 2 is the domain of the electronic programmable fuse-wire device among the present invention;
Fig. 3 is the schematic diagram of electronic programmable fuse-wire device behind exposure and etching technics among the present invention.
Embodiment
The invention will be further described below in conjunction with the drawings and specific embodiments, but not as limiting to the invention.
Be illustrated in figure 2 as a kind ofly through the improved electronic programmable fuse-wire device of modification method, comprising electrode 21 and electrode 22 and being connected to two polysilicon fuses 23,24 between the electrode is contact hole on the electrode, and above-mentioned parts are incorporated on the substrate; Wherein, the substrate in these polysilicon fuse 23 both sides increases additional patterns 25(Sub-resolution Assistant Feature, the SRAF with inferior resolution).
So-called inferior resolution additional patterns, the a kind of of optical adjacent correction method (OPC), its principle is by add the additional patterns that mask aligner can not be resolved around normal figure, these inferior resolution additional patterns are owing to can not be resolved by mask aligner, so in final exposure figure, can not exist, but because the interference of light effect, these inferior figures of resolving can assist final exposure figure more near targeted graphical.
The additional patterns that increases in polysilicon fuse 23 both sides, with respect to this polysilicon fuse symmetric arrays, and the additional patterns of this polysilicon fuse homonymy in a row arranges, and the interval between the figure is consistent; The resolution of this additional patterns is lower than the resolution of polysilicon fuse, can't be resolved by mask aligner.
As shown in Figure 3, increase above-mentioned inferior resolution additional patterns at the electronic programmable fuse-wire device, can be so that in the polysilicon photo-etching technological process, different from the characteristic size of the part polysilicon fuse 32 of not revised by SRAF by the characteristic size of the corrected part polysilicon fuse 31 of SRAF (Critical Dimension), because interference of light effect, the former characteristic size has so increased the feature size variations of polysilicon fuse less than the latter; When between two electrodes in addition during high electric current, the current density in the polysilicon fuse between 31 and 32 is different, presents current-density gradient, has strengthened the ELECTROMIGRATION PHENOMENON of electronic programmable fuse, thereby has strengthened the fusing performance of electronic programmable fuse-wire device.
The technical program is not limited to be applied in the electronic programmable fuse-wire device of 40nm, to strengthen the fusing performance of electronic programmable fuse-wire device.
The above is only for preferred embodiment of the present invention, is not so limits claim of the present invention, so the equivalent structure that all utilizations specification of the present invention and diagramatic content are made changes, all is included in protection scope of the present invention.
Claims (6)
1. the modification method of an electronic programmable fuse-wire device, be applicable to the electronic programmable fuse-wire device, described electronic programmable fuse-wire device comprises two polysilicon electrodes and is connected in electronic programmable fuse between the described electrode, above-mentioned electrode and electronic programmable fuse are positioned on the substrate, it is characterized in that, increase inferior resolution additional patterns in electronic programmable fuse both sides, described inferior resolution additional patterns is used for changing the characteristic size of described electronic programmable fuse.
2. the modification method of electronic programmable fuse-wire device as claimed in claim 1 is characterized in that, uses polysilicon fuse as described electronic programmable fuse.
3. the modification method of electronic programmable fuse-wire device as claimed in claim 1 is characterized in that, the resolution of described inferior resolution additional patterns is lower than the resolution of described electronic programmable fuse and can not be resolved by mask aligner.
4. the modification method of electronic programmable fuse-wire device as claimed in claim 3 is characterized in that, adopts the mode of symmetric arrays that described inferior resolution additional patterns is arranged on the substrate of described polysilicon fuse both sides.
5. the modification method of electronic programmable fuse-wire device as claimed in claim 4 is characterized in that, adopts mode of arranging in a row that the described inferior resolution additional patterns of homonymy is arranged on the substrate of described polysilicon fuse.
6. the modification method of electronic programmable fuse-wire device as claimed in claim 5 is characterized in that, the spacing between the described additional patterns of the width definition homonymy that employing is default.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012103436352A CN102867782A (en) | 2012-09-17 | 2012-09-17 | Method for correcting electronically programmable fuse wire device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012103436352A CN102867782A (en) | 2012-09-17 | 2012-09-17 | Method for correcting electronically programmable fuse wire device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102867782A true CN102867782A (en) | 2013-01-09 |
Family
ID=47446554
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012103436352A Pending CN102867782A (en) | 2012-09-17 | 2012-09-17 | Method for correcting electronically programmable fuse wire device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102867782A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109032619A (en) * | 2018-07-13 | 2018-12-18 | 上海艾为电子技术股份有限公司 | Determine the method and device of fuse burning coding |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050271953A1 (en) * | 2001-09-28 | 2005-12-08 | Asml Masktools B.V. | Optical proximity correction method utilizing phase-edges as sub-resolution assist features |
| CN101034697A (en) * | 2006-03-09 | 2007-09-12 | 国际商业机器公司 | Electrically programmable fuse structures with narrowed width regions configured to enhance current crowding and methods of fabrication thereof |
| US20080308900A1 (en) * | 2007-06-12 | 2008-12-18 | International Business Machines Corporation | Electrical fuse with sublithographic dimension |
-
2012
- 2012-09-17 CN CN2012103436352A patent/CN102867782A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050271953A1 (en) * | 2001-09-28 | 2005-12-08 | Asml Masktools B.V. | Optical proximity correction method utilizing phase-edges as sub-resolution assist features |
| CN101034697A (en) * | 2006-03-09 | 2007-09-12 | 国际商业机器公司 | Electrically programmable fuse structures with narrowed width regions configured to enhance current crowding and methods of fabrication thereof |
| US20080308900A1 (en) * | 2007-06-12 | 2008-12-18 | International Business Machines Corporation | Electrical fuse with sublithographic dimension |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109032619A (en) * | 2018-07-13 | 2018-12-18 | 上海艾为电子技术股份有限公司 | Determine the method and device of fuse burning coding |
| CN109032619B (en) * | 2018-07-13 | 2021-12-24 | 上海艾为电子技术股份有限公司 | Method and device for determining fuse burning code |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI553520B (en) | Touch panel and method of manufacturing the same | |
| KR20090023939A (en) | Electrical fuse device | |
| JP2007273871A (en) | Method and program for generating design data, and manufacturing method of semiconductor device | |
| CN103972241B (en) | Array substrate of electronic paper, manufacturing method thereof and electronic paper | |
| CN104538393B (en) | A kind of chip, the production of chip and application method | |
| CN106154737B (en) | A kind of domain processing method reducing ESD risk | |
| CN102867782A (en) | Method for correcting electronically programmable fuse wire device | |
| US8760905B2 (en) | Electric fuse, semiconductor device, and information writing method of electric fuse | |
| JP2014053566A (en) | Semiconductor device | |
| CN105374746B (en) | A kind of method for promoting via layer process window | |
| CN104616940A (en) | Chip type protection element and a manufacturing method thereof | |
| JP2005236251A (en) | Method and apparatus for manufacturing thin-film transistor array | |
| JPH1012127A (en) | Field electron emitting device | |
| US9287000B1 (en) | Three terminal fuse with FinFET | |
| CN102832196A (en) | Method for enhancing fusing properties of electronic programmable fuse wire devices | |
| CN102760720B (en) | Electronic programmable fuse wire vacant active area adding method and electronic programmable fuse wire | |
| JP2010049857A (en) | Ion generator | |
| CN102915961B (en) | Manufacturing method of electronic programmable fuse device | |
| CN101419634B (en) | Metallic layer artwork distributing method capable of increasing process window | |
| CN204271042U (en) | A kind of electric fuse test structure | |
| JP2007184487A (en) | Extraction method of circuit signal | |
| US20120168959A1 (en) | Package substrate having a through hole and method of fabricating the same | |
| CN203553153U (en) | Anti-fuse structure | |
| KR101339953B1 (en) | Method for producing carbon nanotube semiconductor device | |
| CN102842532A (en) | Metal programmable fuse device manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20130109 |