CN102832196A - Method for enhancing fusing properties of electronic programmable fuse wire devices - Google Patents
Method for enhancing fusing properties of electronic programmable fuse wire devices Download PDFInfo
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- CN102832196A CN102832196A CN2012103339028A CN201210333902A CN102832196A CN 102832196 A CN102832196 A CN 102832196A CN 2012103339028 A CN2012103339028 A CN 2012103339028A CN 201210333902 A CN201210333902 A CN 201210333902A CN 102832196 A CN102832196 A CN 102832196A
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- electronic programmable
- programmable fuse
- fuse
- fuse wire
- polysilicon
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Abstract
The invention discloses a method for enhancing the fusing properties of electronic programmable fuse wire devices, which is implemented by using two electrodes and an electronic programmable fuse wire, wherein the electronic programmable fuse wire is connected between the two electrodes, the electrodes and the electronic programmable fuse wire are arranged on a substrate, the two sides of the electronic programmable fuse wire are respectively additionally provided with a vacant gate electrode, and the vacant gate electrode is used for enabling the electronic programmable fuse wire to have different feature sizes, thereby enhancing the fusing properties of the electronic programmable fuse wire. The method disclosed by the invention has the beneficial effects that: through providing the additional vacant polysilicon gates, different feature sizes are formed in a polysilicon fuse wire, thereby causing the occurrence of the current density gradient in the polysilicon fuse wire, enhancing the electromigration phenomenon of the electronic programmable fuse wire, and finally enhancing the fusing properties of electronic programmable fuse wire devices.
Description
Technical field
The present invention relates to electronic programmable fuse-wire device manufacturing technology field, be specifically related to a kind of method that promotes electronic programmable fuse-wire device fusing performance
Background technology
Electronic programmable fuse (Electrically Programming Fuse; EFuse) technology is a kind of technology of utilizing the metal electro-migration phenomenon to grow up; Its ability and CMOS technology are compatible; Area is little, main as carry out redundancy, field repair chip, to the chip reprogramming etc., can make the electronic product intellectuality more that becomes.
Common electronic programmable fuse-wire device domain is as shown in Figure 1, and 2,3 are respectively two electrodes among the figure, and 1 is the polysilicon fuse between two electrodes.When between two electrodes in addition during high current, under the effect of higher current density, relevant atom will move along the electron motion direction, forms the cavity, and finally opens circuit, and this phenomenon is exactly an ELECTROMIGRATION PHENOMENON.The electronic programmable fuse-wire device is exactly the ELECTROMIGRATION PHENOMENON of utilizing in the polysilicon fuse; Make polysilicon fuse before fusing with fusing after resistance change (usually the resistance after the fusing is 10 ~ 1000 times of fusing resistance before), thereby reach programmable purpose.
ELECTROMIGRATION PHENOMENON in the above-mentioned electronic programmable fuse-wire device and the electric current distribution in the polysilicon fuse are closely related; When the electric current distribution in the polysilicon fuse in the time of inhomogeneous (promptly having current-density gradient); Relevant atom receives the electronics wind behaviour different on two electrode direction; Thereby ELECTROMIGRATION PHENOMENON takes place more easily, make polysilicon fuse fuse more easily; The present invention has promptly utilized above-mentioned principle.
Summary of the invention
To the manufacturing process of electronic programmable fuse-wire device, the present invention provides a kind of improvement technical scheme that promotes electronic programmable fuse-wire device fusing performance.
A kind of method that promotes electronic programmable fuse-wire device fusing performance; Comprise two electrodes and be connected two electronic programmable fuses between the electrode; Said electrode and electronic programmable fuse all are positioned on the substrate; Wherein, add vacant grid in said electronic programmable fuse both sides, said vacant grid is used to change the characteristic size of said electronic programmable fuse.
Preferably, promote the method for electronic programmable fuse-wire device fusing performance, wherein, adopt polysilicon fuse to constitute said electronic programmable fuse.
Preferably, promote the method for electronic programmable fuse-wire device fusing performance, wherein, adopt polysilicon gate as said vacant grid.
Preferably, promote the method for electronic programmable fuse-wire device fusing performance, wherein, adopt the method for symmetric arrays that said polysilicon gate is arranged in said electronic programmable fuse both sides.
Preferably, promote the method for electronic programmable fuse-wire device fusing performance, wherein, adopt the mode of in a row arranging, at the homonymy of said electronic programmable fuse and along the said polysilicon gate of said polysilicon fuse axially-aligned.
Preferably, promote the method for electronic programmable fuse-wire device fusing performance, wherein, each said polysilicon gate is placed perpendicular to said electronic programmable fuse.
Preferably, promote the method for electronic programmable fuse failure performance, wherein, adopt preset width to define the spacing between the said polysilicon gate of said electronic programmable fuse homonymy.
Beneficial effect of the present invention:
Through increasing additional vacant polysilicon gate; In polysilicon fuse, form the different character size; Thereby cause occurring current-density gradient in the polysilicon fuse, strengthened the ELECTROMIGRATION PHENOMENON of electronic programmable fuse, finally strengthen the fusing performance of electronic programmable fuse-wire device.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art; To do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below; Obviously, the accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills; Under the prerequisite of not paying creative work property, can also obtain other accompanying drawing according to these accompanying drawings
Fig. 1 is the domain of common electronic programmable fuse-wire device;
Fig. 2 is the domain of the electronic programmable fuse-wire device among the present invention;
Fig. 3 is the sketch map of electronic programmable fuse-wire device behind exposure and etching technics among the present invention.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment the present invention is described further, but not as qualification of the present invention.
Be illustrated in figure 2 as a preferred embodiment among the present invention, comprising electrode 21 and electrode 22, and be connected two electronic programmable fuses 23 between the electrode, have contact hole 24 on the above-mentioned electrode, the electronic programmable fuse is a polysilicon fuse; Above-mentioned parts all are integrated on the substrate.
On the substrate of these polysilicon fuse both sides, be added with vacant polysilicon gate, this vacant polysilicon gate is symmetrically distributed in the polysilicon fuse both sides, and axially in a row arranges along polysilicon fuse; Each polysilicon gate is placed perpendicular to polysilicon fuse; Keep certain spacing between per two polysilicon gates, this spacing is fixed.
As shown in Figure 3, when polysilicon fuse after overexposure and etch step because the interference of light effect, the characteristic size of the part polysilicon gate 31 between heteropleural two additional vacant polysilicon gates is less than the characteristic size of the polysilicon gate 32 of remainder.Because the characteristic size of polysilicon fuse changes; When between electrode 33 and the electrode 34 in addition during high electric current; 31 parts are different with the current density of 32 parts; Current-density gradient promptly occurs, thereby strengthened the ELECTROMIGRATION PHENOMENON of electronic programmable fuse, strengthened the fusing performance of electronic programmable fuse-wire device.
The present technique scheme is not limited to be applied in the electronic programmable fuse-wire device of 40nm, to strengthen the fusing performance of electronic programmable fuse-wire device.
The above is merely preferred embodiment of the present invention, is not so limits claim of the present invention, so the equivalent structure that all utilizations specification of the present invention and diagramatic content have been done changes, all is included in protection scope of the present invention.
Claims (7)
1. method that promotes electronic programmable fuse-wire device fusing performance; Comprise two electrodes and be connected two electronic programmable fuses between the electrode; Said electrode and electronic programmable fuse all are positioned on the substrate; It is characterized in that add vacant grid in said electronic programmable fuse both sides, said vacant grid is used to change the characteristic size of said electronic programmable fuse.
2. the method for lifting electronic programmable fuse-wire device fusing performance as claimed in claim 1 is characterized in that, adopts polysilicon fuse to constitute said electronic programmable fuse.
3. the method for lifting electronic programmable fuse-wire device fusing performance as claimed in claim 1 is characterized in that, adopts polysilicon gate as said vacant grid.
4. the method for lifting electronic programmable fuse-wire device fusing performance as claimed in claim 3 is characterized in that, adopts the method for symmetric arrays that said polysilicon gate is arranged in said electronic programmable fuse both sides.
5. the method for lifting electronic programmable fuse-wire device fusing performance as claimed in claim 4 is characterized in that, adopts the mode of in a row arranging, at the homonymy of said electronic programmable fuse and along the said polysilicon gate of said polysilicon fuse axially-aligned.
6. the method for lifting electronic programmable fuse-wire device fusing performance as claimed in claim 5 is characterized in that each said polysilicon gate is placed perpendicular to said electronic programmable fuse.
7. the method for lifting electronic programmable fuse failure performance as claimed in claim 6 is characterized in that, adopts preset width to define the spacing between the said polysilicon gate of said electronic programmable fuse homonymy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012103339028A CN102832196A (en) | 2012-09-11 | 2012-09-11 | Method for enhancing fusing properties of electronic programmable fuse wire devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012103339028A CN102832196A (en) | 2012-09-11 | 2012-09-11 | Method for enhancing fusing properties of electronic programmable fuse wire devices |
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| CN102832196A true CN102832196A (en) | 2012-12-19 |
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| CN2012103339028A Pending CN102832196A (en) | 2012-09-11 | 2012-09-11 | Method for enhancing fusing properties of electronic programmable fuse wire devices |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6271574B1 (en) * | 1998-05-14 | 2001-08-07 | Stmicroelectronics S.A. | Integrated circuit fuse with localized fusing point |
| US20050285224A1 (en) * | 2004-06-29 | 2005-12-29 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and manufacturing method thereof |
| CN101814491A (en) * | 2009-02-20 | 2010-08-25 | 台湾积体电路制造股份有限公司 | IC circuit with fuse and a system thereof |
-
2012
- 2012-09-11 CN CN2012103339028A patent/CN102832196A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6271574B1 (en) * | 1998-05-14 | 2001-08-07 | Stmicroelectronics S.A. | Integrated circuit fuse with localized fusing point |
| US20050285224A1 (en) * | 2004-06-29 | 2005-12-29 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and manufacturing method thereof |
| CN101814491A (en) * | 2009-02-20 | 2010-08-25 | 台湾积体电路制造股份有限公司 | IC circuit with fuse and a system thereof |
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Application publication date: 20121219 |