CN102832196A - Method for enhancing fusing properties of electronic programmable fuse wire devices - Google Patents

Method for enhancing fusing properties of electronic programmable fuse wire devices Download PDF

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Publication number
CN102832196A
CN102832196A CN2012103339028A CN201210333902A CN102832196A CN 102832196 A CN102832196 A CN 102832196A CN 2012103339028 A CN2012103339028 A CN 2012103339028A CN 201210333902 A CN201210333902 A CN 201210333902A CN 102832196 A CN102832196 A CN 102832196A
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China
Prior art keywords
fuse
fuse wire
programmable fuse
electronic
polysilicon
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CN2012103339028A
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Chinese (zh)
Inventor
俞柳江
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上海华力微电子有限公司
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Priority to CN2012103339028A priority Critical patent/CN102832196A/en
Publication of CN102832196A publication Critical patent/CN102832196A/en

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Abstract

The invention discloses a method for enhancing the fusing properties of electronic programmable fuse wire devices, which is implemented by using two electrodes and an electronic programmable fuse wire, wherein the electronic programmable fuse wire is connected between the two electrodes, the electrodes and the electronic programmable fuse wire are arranged on a substrate, the two sides of the electronic programmable fuse wire are respectively additionally provided with a vacant gate electrode, and the vacant gate electrode is used for enabling the electronic programmable fuse wire to have different feature sizes, thereby enhancing the fusing properties of the electronic programmable fuse wire. The method disclosed by the invention has the beneficial effects that: through providing the additional vacant polysilicon gates, different feature sizes are formed in a polysilicon fuse wire, thereby causing the occurrence of the current density gradient in the polysilicon fuse wire, enhancing the electromigration phenomenon of the electronic programmable fuse wire, and finally enhancing the fusing properties of electronic programmable fuse wire devices.

Description

一种提升电子可编程熔丝器件熔断性能的方法 A poppet electronic fuse blown programmable device performance method

技术领域 FIELD

[0001 ] 本发明涉及电子可编程熔丝器件制造技术领域,具体涉及一种提升电子可编程熔丝器件熔断性能的方法 [0001] The present invention relates to electrically programmable fuse device manufacturing technology, particularly to a method of lifting an electronic device blown fuse properties

背景技术 Background technique

[0002] 电子可编程熔丝(Electrically Programming Fuse, eFuse)技术是利用金属电迁移现象发展起来的一种技术,它能和CMOS工艺技术兼容,面积小,主要用作执行冗余、现场修复芯片、对芯片重新编程等,可以使电子产品变得更加智能化。 [0002] Electronic programmable fuse (Electrically Programming Fuse, eFuse) is a technology that use metal electromigration phenomenon developed, and it is compatible with CMOS process technology, small size, mainly used for the implementation of redundancy, on-site repair chip , reprogram the chip, etc., can make electronic products become more intelligent.

[0003] 通常的电子可编程熔丝器件版图如图I所示,图中2,3分别为两个电极,I为两电极之间的多晶硅熔丝。 [0003] The conventional electronically programmable fuse device layout shown in FIG. I, Figures 2, 3, respectively two electrodes, I is the polysilicon fuse between the two electrodes. 当在两电极之间加以较高电流时,在较高的电流密度的作用下,相关原子将会沿着电子运动方向进行迁移,形成空洞,并最终断路,这种现象就是电迁移现象。 When a higher current to be between the two electrodes, under the action of high current density, it will be related to atomic migration along the direction of electron movement, to form a cavity, and eventually open circuit, a phenomenon known as electromigration phenomena. 电子可编程熔丝器件就是利用多晶硅熔丝中的电迁移现象,使得多晶硅熔丝在熔断之前和熔断之后的电阻发生变化(通常熔断之后的电阻为熔断之前的电阻的1(Γ1000倍),从而达到可编程的目的。 Electronically programmable fuse device is the use of electromigration polysilicon fuses, such changes before the polysilicon fuse and the fuse resistance after fusing (resistance after fusing is generally 1 (Γ1000 times the resistance before the fuse), so that to achieve the purpose programmable.

[0004] 上述电子可编程熔丝器件中的电迁移现象与多晶硅熔丝中的电流密度分布紧密相关,当多晶硅熔丝中的电流密度分布不均匀(即存在电流密度梯度)的时候,相关原子在两个电极方向上受电子风力状况不同,从而更容易发生电迁移现象,使得多晶硅熔丝更容易熔断;本发明即利用了上述原理。 [0004] The electromigration electronic fuse devices closely related to the current density distribution in a polysilicon fuse, a polysilicon fuse when the current density distribution nonuniformity (i.e., there is a current density gradient) when correlation atoms two electrodes in the different directions by the electron wind conditions, and thus more prone to electromigration phenomenon, so that it easier to blow a polysilicon fuse; i.e., the present invention utilizes the above principle.

发明内容 SUMMARY

[0005] 针对电子可编程熔丝器件的制造工艺,本发明提供一种提升电子可编程熔丝器件熔断性能的改进技术方案。 [0005] The manufacturing process for the electronic fuse device, the present invention provides an improved technique to enhance the performance of the program electronically programmable blown fuse device.

[0006] 一种提升电子可编程熔丝器件熔断性能的方法,包括两个电极和连接在两个电极之间的电子可编程熔丝,所述电极和电子可编程熔丝均位于一基板上,其中,在所述电子可编程熔丝两侧添加空置栅极,所述空置栅极用于改变所述电子可编程熔丝的特征尺寸。 Method [0006] An electronically programmable fuse is blown to enhance the performance of the device, comprising two electrodes and a connection between the two electrodes of an electronic fuse, the fuse electrode and the electron are located on a substrate wherein said gate is added vacant programmable electronic fuse both sides, the feature size of the gate vacant for changing the programmable electronic fuse.

[0007] 优选地,提升电子可编程熔丝器件熔断性能的方法,其中,采用多晶硅熔丝构成所述电子可编程熔丝。 [0007] Preferably, the programmable fuse is blown to enhance the performance of the electronic device, wherein, using the polysilicon fuse constituting the electronic fuse.

[0008] 优选地,提升电子可编程熔丝器件熔断性能的方法,其中,采用多晶硅栅作为所述空置栅极。 [0008] Preferably, the programmable fuse is blown to enhance the performance of the electronic device, wherein, using the polysilicon gate as a gate vacant.

[0009] 优选地,提升电子可编程熔丝器件熔断性能的方法,其中,采用对称排列的方法将所述多晶硅栅排列在所述电子可编程熔丝两侧。 [0009] Preferably, the electrically programmable fuse is blown to enhance the performance of the device, wherein, the method symmetrical alignment of the polysilicon gate arranged on both sides of the electrically programmable fuse.

[0010] 优选地,提升电子可编程熔丝器件熔断性能的方法,其中,采用成排排列的方式,在所述电子可编程熔丝的同侧且沿所述多晶硅熔丝轴向排列所述多晶硅栅。 [0010] Preferably, the programmable fuse is blown to enhance the performance of the electronic device, wherein, using the embodiment arranged in rows, and arranged in the axial direction of the same side of the polysilicon fuse programmable electronic fuse polysilicon gate.

[0011] 优选地,提升电子可编程熔丝器件熔断性能的方法,其中,每个所述多晶硅栅垂直于所述电子可编程熔丝放置。 [0011] Preferably, the electrically programmable fuse is blown to enhance performance of the device, wherein each of the polysilicon gate disposed perpendicular to the electronic fuse.

[0012] 优选地,提升电子可编程熔丝熔断性能的方法,其中,采用预设的宽度定义所述电子可编程熔丝同侧的所述多晶硅栅之间的间距。 [0012] Preferably, the spacing between the electrically programmable fuse is blown way to improve performance, wherein the polysilicon gate using a preset width defining the same side of the electronic fuse.

[0013] 本发明的有益效果: [0013] Advantageous effects of the invention:

通过增加附加的空置多晶硅栅,在多晶硅熔丝中形成不同的特征尺寸,从而导致多晶硅熔丝中出现电流密度梯度,增强了电子可编程熔丝的电迁移现象,最终增强电子可编程熔丝器件的熔断性能。 By adding additional vacant polysilicon gate, formed of different sizes in the polysilicon fuse characteristics, resulting in a current density gradient in polysilicon fuse occurs, the electronic fuse enhanced electromigration phenomenon, ultimately enhance electronically programmable fuse device fusing performance.

附图说明 BRIEF DESCRIPTION

[0014] 为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动性的前提下,还可以根据这些附图获得其他的附图图I是通常的电子可编程熔丝器件的版图; [0014] In order to more clearly illustrate the technical solutions in the embodiments or the prior art embodiment of the present invention, briefly introduced hereinafter, embodiments are described below in the accompanying drawings or described in the prior art needed to be used in describing the embodiments the drawings are only some embodiments of the present invention, those of ordinary skill in the art is concerned, without any creative effort, and may still derive other drawings from such accompanying drawings Figure I is a conventional electrically programmable fusible wire layout of the device;

图2是本发明中的电子可编程熔丝器件的版图; FIG 2 is a layout of an electronic fuse in the device according to the present invention;

图3是本发明中的电子可编程熔丝器件经曝光和刻蚀工艺后的示意图。 FIG 3 is a schematic diagram of an electronic fuse of the present invention after the exposure device and the etching process.

具体实施方式 Detailed ways

[0015] 下面结合附图和具体实施例对本发明作进一步说明,但不作为本发明的限定。 [0015] The following Examples and specific embodiments of the present invention will be further described in conjunction with the accompanying drawings, are not limitative of the present invention.

[0016] 如图2所示为本发明中的一个较佳实施例,其中包括电极21和电极22,以及连接在两个电极之间的电子可编程熔丝23,上述电极上具有接触孔24,电子可编程熔丝为多晶硅熔丝;上述部件均整合于一基板上。 [0016] FIG. 2 is shown a preferred embodiment of the present invention, which comprises electrodes 21 and 22, connected between the two electrodes and the electronic fuse 23, having a contact hole 24 to the electrode the electronic fuse is a polysilicon fuse; the above-described components are integrated on a substrate.

[0017] 在该多晶硅熔丝两侧的基板上添加有空置多晶硅栅,该空置多晶硅栅对称分布于多晶硅熔丝两侧,且沿多晶硅熔丝轴向成排排列;每个多晶硅栅垂直于多晶硅熔丝放置;每两个多晶硅栅之间保持一定的间距,该间距是固定的。 [0017] added on the substrate on both sides of the polysilicon fuse polysilicon gate vacant, the vacant polysilicon gate polysilicon symmetrically on both sides of the fuse, and axially arranged in rows along the polysilicon fuse; perpendicular to each of the polysilicon gate polysilicon the fuse is placed; to maintain a certain distance between each two polysilicon gates, the pitch is fixed.

[0018] 如图3所示,当多晶硅熔丝经过曝光和刻蚀步骤后,由于光的干涉作用,位于异侧两附加空置多晶硅栅之间的部分多晶硅栅31的特征尺寸要小于其余部分的多晶硅栅32的特征尺寸。 [0018] 3, when subjected to exposure and etching steps, due to the interference effect of light, wherein the polysilicon fuse located in different size fractions of the polysilicon gate 31 between the two sides of the polysilicon gate is smaller than the vacant additional rest a characteristic dimension of the polysilicon gate 32. 由于多晶硅熔丝的特征尺寸发生变化,当电极33和电极34之间加以高电流时,31部分和32部分的电流密度不同,即出现了电流密度梯度,从而增强了电子可编程熔丝的电迁移现象,增强了电子可编程熔丝器件的熔断性能。 Since the feature size of polysilicon fuses changed to be high when the current between the electrodes 33 and the electrodes 34, 31 in different portions of the current density and the portion 32, i.e., current density gradient occurs, thereby enhancing the electrically programmable electronic fuse the migration phenomenon, enhances the performance of the electronic fuse programmable fuse devices.

[0019] 本技术方案不限于应用在40nm的电子可编程熔丝器件中,以增强电子可编程熔丝器件的熔断性能。 [0019] The present aspect is not limited to application in 40nm electronic fuse device, in order to enhance performance of the electronic fuse blow devices.

[0020] 以上所述仅为本发明较佳的实施例,并非因此限制本发明的申请专利范围,所以凡运用本发明说明书及图示内容所作出的等效结构变化,均包含在本发明的保护范围内。 [0020] The foregoing is only preferred embodiments of the present invention, not intended to limit the scope of the present invention patent application, the use of the specification and illustrate where the present invention is made equivalent structural changes are included in the present invention. within the scope of protection.

Claims (7)

1. 一种提升电子可编程熔丝器件熔断性能的方法,包括两个电极和连接在两个电极之间的电子可编程熔丝,所述电极和电子可编程熔丝均位于一基板上,其特征在于,在所述电子可编程熔丝两侧添加空置栅极,所述空置栅极用于改变所述电子可编程熔丝的特征尺寸。 1. A method of electronically programmable fuse is blown to enhance the performance of the device, comprising two electrodes and a connection between the two electrodes of an electronic fuse, the fuse electrode and the electron are located on a substrate, wherein adding the vacant gate electrically programmable fuse both sides of the gate electrode for changing the size of the vacant wherein the programmable electronic fuse.
2.如权利要求I所述的提升电子可编程熔丝器件熔断性能的方法,其特征在于,采用多晶硅熔丝构成所述电子可编程熔丝。 2. The method of claim I electronically programmable fuse blowing performance of the lifting device, characterized in that, using polysilicon fuses constituting the electronic fuse.
3.如权利要求I所述的提升电子可编程熔丝器件熔断性能的方法,其特征在于,采用多晶硅栅作为所述空置栅极。 I 3. Electronic fuse as claimed in claim fusing performance of the method of the lifting device, characterized in that, using the polysilicon gate as a gate vacant.
4.如权利要求3所述的提升电子可编程熔丝器件熔断性能的方法,其特征在于,采用对称排列的方法将所述多晶硅栅排列在所述电子可编程熔丝两侧。 4. The method of electronically programmable fuse is blown to enhance the performance of the device as claimed in claim 3, characterized in that the method symmetrical alignment of the polysilicon gate arranged on both sides of the electrically programmable fuse.
5.如权利要求4所述的提升电子可编程熔丝器件熔断性能的方法,其特征在于,采用成排排列的方式,在所述电子可编程熔丝的同侧且沿所述多晶硅熔丝轴向排列所述多晶硅栅。 5. The method of electronically programmable fuse is blown to enhance the performance of the device as claimed in claim 4, characterized in that, arranged in rows using the way, on the same side of the electronic fuse and along the polysilicon fuse the axially aligned polysilicon gate.
6.如权利要求5所述的提升电子可编程熔丝器件熔断性能的方法,其特征在于,每个所述多晶硅栅垂直于所述电子可编程熔丝放置。 The method of electrically programmable fuse is blown to enhance the performance of the device as claimed in claim 5, characterized in that each of the polysilicon gate disposed perpendicular to the electronic fuse.
7.如权利要求6所述的提升电子可编程熔丝熔断性能的方法,其特征在于,采用预设的宽度定义所述电子可编程熔丝同侧的所述多晶硅栅之间的间距。 7. The method to enhance the electronic properties of the blown fuse as claimed in claim 6, wherein said predetermined width is defined using the electronic fuse ipsilateral spacing between polysilicon gates.
CN2012103339028A 2012-09-11 2012-09-11 Method for enhancing fusing properties of electronic programmable fuse wire devices CN102832196A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271574B1 (en) * 1998-05-14 2001-08-07 Stmicroelectronics S.A. Integrated circuit fuse with localized fusing point
US20050285224A1 (en) * 2004-06-29 2005-12-29 Matsushita Electric Industrial Co., Ltd. Semiconductor device and manufacturing method thereof
CN101814491A (en) * 2009-02-20 2010-08-25 台湾积体电路制造股份有限公司 IC circuit with fuse and a system thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271574B1 (en) * 1998-05-14 2001-08-07 Stmicroelectronics S.A. Integrated circuit fuse with localized fusing point
US20050285224A1 (en) * 2004-06-29 2005-12-29 Matsushita Electric Industrial Co., Ltd. Semiconductor device and manufacturing method thereof
CN101814491A (en) * 2009-02-20 2010-08-25 台湾积体电路制造股份有限公司 IC circuit with fuse and a system thereof

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