CN102738075A - Method for adding idle contact hole of electronic programmable fuse and electronic programmable fuse - Google Patents
Method for adding idle contact hole of electronic programmable fuse and electronic programmable fuse Download PDFInfo
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- CN102738075A CN102738075A CN2012102645219A CN201210264521A CN102738075A CN 102738075 A CN102738075 A CN 102738075A CN 2012102645219 A CN2012102645219 A CN 2012102645219A CN 201210264521 A CN201210264521 A CN 201210264521A CN 102738075 A CN102738075 A CN 102738075A
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- fuse
- electronic programmable
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- contact hole
- metal silicide
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Abstract
The invention provides a method for adding an idle contact hole of an electronic programmable fuse and the electronic programmable fuse. The electronic programmable fuse comprises a first electrode, a second electrode and a polycrystalline silicon fuse, wherein the polycrystalline silicon fuse is arranged between the first electrode and the second electrode; and the polycrystalline silicon fuse is connected with the first electrode and the second electrode. The method for adding the idle contact hole of the electronic programmable fuse comprises the following step of forming one or more additional idle contact holes on the polycrystalline silicon fuse, wherein the polycrystalline silicon fuse comprises a first metal silicide part and a second metal silicide part; the first metal silicide part is metal silicide below the idle contact hole; and the second metal silicide part is metal silicide in an area below the non-idle contact hole of the polycrystalline silicon fuse.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the electronic programmable fuse that the present invention relates to the vacant contact hole adding method of a kind of electronic programmable fuse and process according to the vacant contact hole adding method of this electronic programmable fuse.
Background technology
A kind of technology that electronic programmable fuse (electrically programmable fuse, i.e. eFuse) techniques make use metal electro-migration phenomenon grows up, its ability and CMOS technology are compatible, and area is little.Mainly be used as and carry out redundancy, field repair chip, to the chip reprogramming, make the electronic product intellectuality more that becomes.
Common electronic programmable fuse-wire device domain is as shown in Figure 1, and label 2 is represented two electrodes (being furnished with contact hole on it, shown in black box) respectively with label 3 among the figure, and label 1 is two interelectrode polysilicon fuses.When between two electrodes in addition during high current, under the effect of higher current density, relevant atom will move along the electron motion direction, forms the cavity, finally opens circuit, and this phenomenon is exactly electromigration (EM) phenomenon.The electronic programmable fuse-wire device is exactly the ELECTROMIGRATION PHENOMENON of utilizing in the polysilicon fuse; Make polysilicon fuse before fusing with fusing after resistance change (usually the resistance after the fusing is 10 ~ 1000 times of fusing resistance before), thereby reach programmable purpose.
The ELECTROMIGRATION PHENOMENON of electronic programmable fuse-wire device and the electric current distribution in the polysilicon fuse are closely related; When the electric current distribution in the polysilicon fuse in the time of inhomogeneous (promptly having current-density gradient); Relevant atom receives the electronics wind behaviour different on two electrode direction; Thereby ELECTROMIGRATION PHENOMENON takes place more easily, make polysilicon fuse fuse more easily.
Therefore, hope can provide a kind of technology that can strengthen the fusing performance of electronic programmable fuse-wire device.
Summary of the invention
Technical problem to be solved by this invention is to having above-mentioned defective in the prior art, and a kind of vacant contact hole adding method of electronic programmable fuse of the fusing performance that can strengthen the electronic programmable fuse-wire device and the electronic programmable fuse of processing according to the vacant contact hole adding method of this electronic programmable fuse are provided.
According to a first aspect of the invention, provide a kind of electronic programmable fuse vacant contact hole adding method, said electronic programmable fuse comprises: first electrode, second electrode and polysilicon fuse; Wherein, said polysilicon fuse is arranged between said first electrode and said second electrode, and said polysilicon fuse is connected with said first electrode and said second electrode; The vacant contact hole adding method of wherein said electronic programmable fuse comprises: on said polysilicon fuse, arrange one or more additional vacant contact holes.
Preferably, in the vacant contact hole adding method of said electronic programmable fuse, said polysilicon fuse comprises first metal silicide portion and second metal silicide portion; Wherein said first metal silicide portion is the metal silicide of vacant contact hole below, and said second metal silicide portion is the metal silicide in zone of the non-vacant contact hole below of polysilicon fuse.
Preferably, in the vacant contact hole adding method of said electronic programmable fuse, be furnished with contact hole on said first electrode and said second electrode.
According to a second aspect of the invention, a kind of described according to a first aspect of the invention electronic programmable fuse electronic programmable fuse that vacant contact hole adding method is processed is provided, it comprises: first electrode, second electrode and polysilicon fuse; Wherein, said polysilicon fuse is arranged between said first electrode and said second electrode, and said polysilicon fuse is connected with said first electrode and said second electrode; Wherein, one or more additional vacant contact holes on said polysilicon fuse, have been arranged.
Preferably, in said electronic programmable fuse, said polysilicon fuse comprises first metal silicide portion and second metal silicide portion; Wherein said first metal silicide portion is the metal silicide of vacant contact hole below, and said second metal silicide portion is the metal silicide in zone of the non-vacant contact hole below of polysilicon fuse.
Preferably, in said electronic programmable fuse, be furnished with contact hole on said first electrode and said second electrode.
According to a third aspect of the invention we, a kind of electronic programmable fuse is provided, has it is characterized in that having adopted the vacant contact hole adding method of described according to a third aspect of the invention we electronic programmable fuse.
The present invention is through increasing additional vacant contact hole on the polysilicon fuse of common electronic programmable fuse-wire device; Make the silicide thickness of additional vacant contact hole bottom reduce; Thereby increase the current density change in the electronic programmable fuse-wire device, strengthened the fusing performance of electronic programmable fuse-wire device.
Description of drawings
In conjunction with accompanying drawing, and, will more easily more complete understanding be arranged and more easily understand its attendant advantages and characteristic the present invention through with reference to following detailed, wherein:
Fig. 1 schematically shows the domain according to the electronic programmable fuse-wire device of prior art.
Fig. 2 schematically shows the domain according to the electronic programmable fuse-wire device of the embodiment of the invention.
Fig. 3 schematically shows the sectional view according to the electronic programmable fuse-wire device of the embodiment of the invention.
Need to prove that accompanying drawing is used to explain the present invention, and unrestricted the present invention.Notice that the accompanying drawing of expression structure possibly not be to draw in proportion.And in the accompanying drawing, identical or similar elements indicates identical or similar label.
Embodiment
In order to make content of the present invention clear more and understandable, content of the present invention is described in detail below in conjunction with specific embodiment and accompanying drawing.
Fig. 2 schematically shows the domain according to the electronic programmable fuse-wire device of the embodiment of the invention.
As shown in Figure 2, comprise according to the electronic programmable fuse-wire device of the embodiment of the invention: first electrode 2, second electrode 3 and polysilicon fuse 1.Wherein, polysilicon fuse 1 is arranged between first electrode 2 and second electrode 3, and polysilicon fuse 1 is connected with first electrode 2 and second electrode 3.And, wherein, between first electrode 2 and second electrode 3, arranged one or more additional vacant contact holes 4 in the silicon chip in zone.
And, preferably, be furnished with contact hole on first electrode 2 and second electrode 3, shown in black box.
Thus, can find out, different with domain according to the electronic programmable fuse-wire device of prior art, on polysilicon fuse 1, arranged additional vacant contact hole (dummy contact) in the embodiment of the invention.
That is, can comprise: on polysilicon fuse 1, arrange additional vacant contact hole according to the vacant contact hole adding method of the electronic programmable fuse of the embodiment of the invention.
Likewise, in embodiments of the present invention, when between first electrode 2 and second electrode 3 in addition during high current; Under the effect of higher current density, relevant atom will move along the electron motion direction, forms the cavity; Finally open circuit, this phenomenon is exactly an ELECTROMIGRATION PHENOMENON.The electronic programmable fuse-wire device is exactly the ELECTROMIGRATION PHENOMENON of utilizing in the polysilicon fuse; Make polysilicon fuse before fusing with fusing after resistance change (usually the resistance after the fusing is 10 ~ 1000 times of fusing resistance before), thereby reach programmable purpose.
Fig. 3 schematically shows the sectional view according to the electronic programmable fuse-wire device of the embodiment of the invention, its sectional view for being done along direction 5 among Fig. 2.
As shown in Figure 3, polysilicon fuse 1 comprises first metal silicide portion 61 and second metal silicide portion 62.
First metal silicide portion 61 and second metal silicide portion 62 are metal silicide; Wherein first metal silicide portion 61 is the metal silicide of vacant contact hole 4 belows, and second metal silicide portion 62 is the metal silicide in zone (polysilicon fuse remainder) of the non-vacant contact hole below of polysilicon fuse.
Because the existence of vacant contact hole 4 is arranged, the thickness of first metal silicide portion 61 of contact hole below is less than the thickness of second metal silicide portion 62 of polysilicon fuse remainder.Because first metal silicide portion 61 is different with the thickness of second metal silicide portion 62; So when between first electrode 2 and second electrode 3 in addition during high electric current; First metal silicide portion 61 is different with the current density of second metal silicide portion 62; Thereby strengthened the ELECTROMIGRATION PHENOMENON of electronic programmable fuse, strengthened the fusing performance of electronic programmable fuse-wire device.
According to another preferred embodiment of the invention, the present invention also provides a kind of electronic programmable fuse of processing according to the vacant contact hole adding method of above-mentioned electronic programmable fuse.
According to another preferred embodiment again of the present invention, the present invention also provides a kind of electronic programmable fuse manufacturing approach that has adopted the vacant contact hole adding method of above-mentioned electronic programmable fuse.
Thus, according to vacant contact hole adding method of the electronic programmable fuse-wire device of the embodiment of the invention and the electronic programmable fuse-wire device of processing thus and adopted the electronic programmable fuse manufacturing approach of the vacant contact hole adding method of above-mentioned electronic programmable fuse to have following advantage at least:
1. through increasing the additional vacant contact hole on the polysilicon fuse, in polysilicon fuse, form the metal silicide of different-thickness.
2. when between two electrodes in addition during high electric current, the current density among the metal silicide of different-thickness is different.
3. the current density in the polysilicon fuse is different, has strengthened the ELECTROMIGRATION PHENOMENON of electronic programmable fuse, thereby has strengthened the fusing performance of electronic programmable fuse-wire device.
That is to say; The embodiment of the invention is through increasing additional vacant contact hole on the polysilicon fuse of common electronic programmable fuse-wire device; Make the silicide thickness of additional vacant contact hole bottom reduce; Thereby increase the current density change in the electronic programmable fuse-wire device, strengthened the fusing performance of electronic programmable fuse-wire device.
It is understandable that though the present invention with the preferred embodiment disclosure as above, yet the foregoing description is not in order to limit the present invention.For any those of ordinary skill in the art; Do not breaking away under the technical scheme scope situation of the present invention; All the technology contents of above-mentioned announcement capable of using is made many possible changes and modification to technical scheme of the present invention, or is revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical scheme of the present invention, all still belongs in the scope of technical scheme protection of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (7)
1. vacant contact hole adding method of electronic programmable fuse, said electronic programmable fuse comprises: first electrode, second electrode and polysilicon fuse; Wherein, said polysilicon fuse is arranged between said first electrode and said second electrode, and said polysilicon fuse is connected with said first electrode and said second electrode;
It is characterized in that the vacant contact hole adding method of said electronic programmable fuse comprises: on said polysilicon fuse, arrange one or more additional vacant contact holes.
2. the vacant contact hole adding method of electronic programmable fuse according to claim 1 is characterized in that said polysilicon fuse comprises first metal silicide portion and second metal silicide portion; Wherein said first metal silicide portion is the metal silicide of vacant contact hole below, and said second metal silicide portion is the metal silicide in zone of the non-vacant contact hole below of polysilicon fuse.
3. the vacant contact hole adding method of electronic programmable fuse according to claim 2 is characterized in that, is furnished with contact hole on said first electrode and said second electrode.
4. an electronic programmable fuse of processing according to the vacant contact hole adding method of the described electronic programmable fuse of one of claim 1 to 3 is characterized in that comprising: first electrode, second electrode and polysilicon fuse; Wherein, said polysilicon fuse is arranged between said first electrode and said second electrode, and said polysilicon fuse is connected with said first electrode and said second electrode; Wherein, one or more additional vacant contact holes on said polysilicon fuse, have been arranged.
5. electronic programmable fuse according to claim 4 is characterized in that, said polysilicon fuse comprises first metal silicide portion and second metal silicide portion; Wherein said first metal silicide portion is the metal silicide of vacant contact hole below, and said second metal silicide portion is the metal silicide in zone of the non-vacant contact hole below of polysilicon fuse.
6. electronic programmable fuse according to claim 5 is characterized in that, is furnished with contact hole on said first electrode and said second electrode.
7. an electronic programmable fuse is characterized in that having adopted according to the vacant contact hole adding method of the described electronic programmable fuse of one of claim 1 to 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102645219A CN102738075A (en) | 2012-07-27 | 2012-07-27 | Method for adding idle contact hole of electronic programmable fuse and electronic programmable fuse |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102645219A CN102738075A (en) | 2012-07-27 | 2012-07-27 | Method for adding idle contact hole of electronic programmable fuse and electronic programmable fuse |
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| CN102738075A true CN102738075A (en) | 2012-10-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2012102645219A Pending CN102738075A (en) | 2012-07-27 | 2012-07-27 | Method for adding idle contact hole of electronic programmable fuse and electronic programmable fuse |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5882998A (en) * | 1996-12-27 | 1999-03-16 | Vlsi Technology, Inc. | Low power programmable fuse structures and methods for making the same |
| US6337507B1 (en) * | 1995-09-29 | 2002-01-08 | Intel Corporation | Silicide agglomeration fuse device with notches to enhance programmability |
| CN101068015A (en) * | 2006-04-26 | 2007-11-07 | 三星电子株式会社 | Devices and methods for constructing electrically programmable integrated fuses for low power applications |
-
2012
- 2012-07-27 CN CN2012102645219A patent/CN102738075A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6337507B1 (en) * | 1995-09-29 | 2002-01-08 | Intel Corporation | Silicide agglomeration fuse device with notches to enhance programmability |
| US5882998A (en) * | 1996-12-27 | 1999-03-16 | Vlsi Technology, Inc. | Low power programmable fuse structures and methods for making the same |
| CN101068015A (en) * | 2006-04-26 | 2007-11-07 | 三星电子株式会社 | Devices and methods for constructing electrically programmable integrated fuses for low power applications |
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Application publication date: 20121017 |