CN102760720A - Electronic programmable fuse wire vacant active area adding method and electronic programmable fuse wire - Google Patents
Electronic programmable fuse wire vacant active area adding method and electronic programmable fuse wire Download PDFInfo
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- CN102760720A CN102760720A CN2012102643726A CN201210264372A CN102760720A CN 102760720 A CN102760720 A CN 102760720A CN 2012102643726 A CN2012102643726 A CN 2012102643726A CN 201210264372 A CN201210264372 A CN 201210264372A CN 102760720 A CN102760720 A CN 102760720A
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Abstract
The invention provides an electronic programmable fuse wire vacant active area adding method and an electronic programmable fuse wire. The electronic programmable fuse wire comprises a first electrode, a second electrode and a polycrystalline silicon fuse wire, wherein the polycrystalline silicon fuse wire is arranged between the first electrode and the second electrode, and is connected with the first electrode and the second electrode. The electronic programmable fuse wire vacant active area adding method according to the invention comprises the following step of: arranging one or more additional vacant active areas in a silicon chip in an area between the first electrode and the second electrode. Moreover, a shallow channel is formed between adjacent additional vacant active areas. The polycrystalline silicon fuse wire comprises a first metal silicide part and a second metal silicide part; the first metal silicide part is a metal silicide above an additional vacant active area; and the second metal silicide part is a metal silicide above the shallow groove.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the electronic programmable fuse that the present invention relates to the vacant active area adding method of a kind of electronic programmable fuse and process according to the vacant active area adding method of this electronic programmable fuse.
Background technology
A kind of technology that electronic programmable fuse (electrically programmable fuse, i.e. eFuse) techniques make use metal electro-migration phenomenon grows up, its ability and CMOS technology are compatible, and area is little.Mainly be used as and carry out redundancy, field repair chip, to the chip reprogramming, make the electronic product intellectuality more that becomes.
Common electronic programmable fuse-wire device domain is as shown in Figure 1, and label 2 is represented two electrodes (being furnished with contact hole on it, shown in black box) respectively with label 3 among the figure, and label 1 is two interelectrode polysilicon fuses.When between two electrodes in addition during high current, under the effect of higher current density, relevant atom will move along the electron motion direction, forms the cavity, finally opens circuit, and this phenomenon is exactly electromigration (EM) phenomenon.The electronic programmable fuse-wire device is exactly the ELECTROMIGRATION PHENOMENON of utilizing in the polysilicon fuse; Make polysilicon fuse before fusing with fusing after resistance change (usually the resistance after the fusing is 10 ~ 1000 times of fusing resistance before), thereby reach programmable purpose.
The ELECTROMIGRATION PHENOMENON of electronic programmable fuse-wire device and the electric current distribution in the polysilicon fuse are closely related; When the electric current distribution in the polysilicon fuse in the time of inhomogeneous (promptly having current-density gradient); Relevant atom receives the electronics wind behaviour different on two electrode direction; Thereby ELECTROMIGRATION PHENOMENON takes place more easily, make polysilicon fuse fuse more easily.
Therefore, hope can provide a kind of technology that can strengthen the fusing performance of electronic programmable fuse-wire device.
Summary of the invention
Technical problem to be solved by this invention is to having above-mentioned defective in the prior art, and a kind of vacant active area adding method of electronic programmable fuse of the fusing performance that can strengthen the electronic programmable fuse-wire device and the electronic programmable fuse of processing according to the vacant active area adding method of this electronic programmable fuse are provided.
According to a first aspect of the invention, provide a kind of electronic programmable fuse vacant active area adding method, said electronic programmable fuse comprises: first electrode, second electrode and polysilicon fuse; Wherein, said polysilicon fuse is arranged between said first electrode and said second electrode, and said polysilicon fuse is connected with said first electrode and said second electrode; The vacant active area adding method of said electronic programmable fuse comprises: between said first electrode and said second electrode, arrange one or more additional vacant active areas in the silicon chip in zone.
Preferably, the vacant active area adding method of said electronic programmable fuse also is included between the adjacent additional vacant active area and arranges shallow trench.
Preferably, in the vacant active area adding method of said electronic programmable fuse, said polysilicon fuse comprises first metal silicide portion and second metal silicide portion; Said first metal silicide portion and said second metal silicide portion are metal silicide; Wherein said first metal silicide portion is the metal silicide of additional vacant active area top, and said second metal silicide portion is the metal silicide of said shallow trench top.
Preferably; In the vacant active area adding method of said electronic programmable fuse; The upper surface of the integral body that said additional vacant active area and said shallow trench constituted is uneven, thereby causes the polysilicon fuse surface of being made up of said first metal silicide portion and said second metal silicide portion of their tops also uneven.
Preferably, in the vacant active area adding method of said electronic programmable fuse, be furnished with contact hole on said first electrode and said second electrode.
According to a second aspect of the invention, a kind of described according to a first aspect of the invention electronic programmable fuse electronic programmable fuse that vacant active area adding method is processed is provided, it comprises: first electrode, second electrode and polysilicon fuse; Wherein, said polysilicon fuse is arranged between said first electrode and said second electrode, and said polysilicon fuse is connected with said first electrode and said second electrode; And wherein, one or more additional vacant active areas between said first electrode and said second electrode, have been arranged in the silicon chip in zone.
Preferably, in said electronic programmable fuse, between adjacent additional vacant active area, arranged shallow trench.
Preferably, in said electronic programmable fuse, said polysilicon fuse comprises first metal silicide portion and second metal silicide portion; Said first metal silicide portion and said second metal silicide portion are metal silicide; Wherein said first metal silicide portion is the metal silicide of additional vacant active area top, and said second metal silicide portion is the metal silicide of said shallow trench top.
Preferably; In said electronic programmable fuse; The upper surface of the integral body that said additional vacant active area and said shallow trench constituted is uneven, thereby causes the polysilicon fuse surface of being made up of said first metal silicide portion and said second metal silicide portion of their tops also uneven.
Preferably, in said electronic programmable fuse, be furnished with contact hole on said first electrode and said second electrode.
The embodiment of the invention is through adding additional vacant active area to the electronic programmable fuse-wire device; Increase the fluctuating quantity on the surface of polysilicon fuse; Thereby increase the sense of current and variable density in the electronic programmable fuse-wire device, strengthened the fusing performance of electronic programmable fuse-wire device.
Description of drawings
In conjunction with accompanying drawing, and, will more easily more complete understanding be arranged and more easily understand its attendant advantages and characteristic the present invention through with reference to following detailed, wherein:
Fig. 1 schematically shows the domain according to the electronic programmable fuse-wire device of prior art.
Fig. 2 schematically shows the domain according to the electronic programmable fuse-wire device of the embodiment of the invention.
Fig. 3 schematically shows the sectional view according to the electronic programmable fuse-wire device of the embodiment of the invention.
Need to prove that accompanying drawing is used to explain the present invention, and unrestricted the present invention.Notice that the accompanying drawing of expression structure possibly not be to draw in proportion.And in the accompanying drawing, identical or similar elements indicates identical or similar label.
Embodiment
In order to make content of the present invention clear more and understandable, content of the present invention is described in detail below in conjunction with specific embodiment and accompanying drawing.
Fig. 2 schematically shows the domain according to the electronic programmable fuse-wire device of the embodiment of the invention.
As shown in Figure 2, comprise according to the electronic programmable fuse-wire device of the embodiment of the invention: first electrode 2, second electrode 3 and polysilicon fuse 1.Wherein, polysilicon fuse 1 is arranged between first electrode 2 and second electrode 3, and polysilicon fuse 1 is connected with first electrode 2 and second electrode 3.And, wherein, between first electrode 2 and second electrode 3, arranged one or more additional vacant active areas 4 in the silicon chip in zone.
And, preferably, be furnished with contact hole on first electrode 2 and second electrode 3, shown in black box.
Thus, can find out, different with domain according to the electronic programmable fuse-wire device of prior art, increased additional vacant active area 4 in the polysilicon fuse bottom in the embodiment of the invention.
That is, can comprise: between said first electrode and said second electrode, arrange one or more additional vacant active areas in the silicon chip in zone according to the vacant active area adding method of the electronic programmable fuse of the embodiment of the invention.
Likewise, in embodiments of the present invention, when between first electrode 2 and second electrode 3 in addition during high current; Under the effect of higher current density, relevant atom will move along the electron motion direction, forms the cavity; Finally open circuit, this phenomenon is exactly an ELECTROMIGRATION PHENOMENON.The electronic programmable fuse-wire device is exactly the ELECTROMIGRATION PHENOMENON of utilizing in the polysilicon fuse; Make polysilicon fuse before fusing with fusing after resistance change (usually the resistance after the fusing is 10 ~ 1000 times of fusing resistance before), thereby reach programmable purpose.
Fig. 3 schematically shows the sectional view according to the electronic programmable fuse-wire device of the embodiment of the invention, its sectional view for being done along direction 5 among Fig. 2.
As shown in Figure 3, between adjacent additional vacant active area 4, arranged shallow trench 7.And wherein polysilicon fuse 1 comprises first metal silicide portion 61 and second metal silicide portion 62.
First metal silicide portion 61 and second metal silicide portion 62 are metal silicide; Wherein first metal silicide portion 61 is the metal silicide of additional vacant active area 4 tops, and second metal silicide portion 62 is the metal silicide of shallow trench 7 (all the other zones between the additional vacant active area) top.
Additional vacant active area 4 is uneven with the upper surface of the integral body that shallow trench 7 is constituted; Thereby cause the polysilicon fuse surface of forming by first metal silicide portion 61 and second metal silicide portion 62 of their tops also uneven; That is, the surface of first metal silicide portion 61 and second metal silicide portion, 62 integral body is also uneven.
When between first electrode 2 and second electrode 3 in addition during high electric current; First metal silicide portion 61 is different with the sense of current of second metal silicide portion 62; Its current density is also different; Thereby strengthened the ELECTROMIGRATION PHENOMENON of electronic programmable fuse, strengthened the fusing performance of electronic programmable fuse-wire device.
According to another preferred embodiment of the invention, the present invention also provides a kind of electronic programmable fuse of processing according to the vacant active area adding method of above-mentioned electronic programmable fuse.
According to another preferred embodiment again of the present invention, the present invention also provides a kind of electronic programmable fuse manufacturing approach that has adopted the vacant active area adding method of above-mentioned electronic programmable fuse.
Thus, according to vacant active area adding method of the electronic programmable fuse-wire device of the embodiment of the invention and the electronic programmable fuse-wire device of processing thereof and adopted the electronic programmable fuse manufacturing approach of the vacant active area adding method of this electronic programmable fuse to have following advantage at least:
1. through increasing additional vacant active area, cause the polysilicon fuse of its top also uneven in the polysilicon fuse bottom.
2. when between two electrodes in addition during high electric current, the sense of current among the polysilicon fuse changes, and current density is also inequality.
3. the current density in the polysilicon fuse is different, has strengthened the ELECTROMIGRATION PHENOMENON of electronic programmable fuse, thereby has strengthened the fusing performance of electronic programmable fuse-wire device.
That is to say; The embodiment of the invention is through adding additional vacant active area to the electronic programmable fuse-wire device; Increase the fluctuating quantity on the surface of polysilicon fuse; Thereby increase the sense of current and variable density in the electronic programmable fuse-wire device, strengthened the fusing performance of electronic programmable fuse-wire device.
It is understandable that though the present invention with the preferred embodiment disclosure as above, yet the foregoing description is not in order to limit the present invention.For any those of ordinary skill in the art; Do not breaking away under the technical scheme scope situation of the present invention; All the technology contents of above-mentioned announcement capable of using is made many possible changes and modification to technical scheme of the present invention, or is revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical scheme of the present invention, all still belongs in the scope of technical scheme protection of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (10)
1. vacant active area adding method of electronic programmable fuse, said electronic programmable fuse comprises: first electrode, second electrode and polysilicon fuse; Wherein, said polysilicon fuse is arranged between said first electrode and said second electrode, and said polysilicon fuse is connected with said first electrode and said second electrode;
It is characterized in that the vacant active area adding method of said electronic programmable fuse comprises: between said first electrode and said second electrode, arrange one or more additional vacant active areas in the silicon chip in zone.
2. the vacant active area adding method of electronic programmable fuse according to claim 1 is characterized in that also being included between the adjacent additional vacant active area and arranges shallow trench.
3. the vacant active area adding method of electronic programmable fuse according to claim 2 is characterized in that said polysilicon fuse comprises first metal silicide portion and second metal silicide portion; Said first metal silicide portion and said second metal silicide portion are metal silicide; Wherein said first metal silicide portion is the metal silicide of additional vacant active area top, and said second metal silicide portion is the metal silicide of said shallow trench top.
4. the vacant active area adding method of electronic programmable fuse according to claim 1 and 2; It is characterized in that; The upper surface of the integral body that said additional vacant active area and said shallow trench constituted is uneven, thereby causes the polysilicon fuse surface of being made up of said first metal silicide portion and said second metal silicide portion of their tops also uneven.
5. the vacant active area adding method of electronic programmable fuse according to claim 1 and 2 is characterized in that, is furnished with contact hole on said first electrode and said second electrode.
6. an electronic programmable fuse of processing according to the vacant active area adding method of the described electronic programmable fuse of one of claim 1 to 5 is characterized in that comprising: first electrode, second electrode and polysilicon fuse; Wherein, said polysilicon fuse is arranged between said first electrode and said second electrode, and said polysilicon fuse is connected with said first electrode and said second electrode; And wherein, one or more additional vacant active areas between said first electrode and said second electrode, have been arranged in the silicon chip in zone.
7. electronic programmable fuse according to claim 6 is characterized in that, between adjacent additional vacant active area, has arranged shallow trench.
8. electronic programmable fuse according to claim 7 is characterized in that, said polysilicon fuse comprises first metal silicide portion and second metal silicide portion; Said first metal silicide portion and said second metal silicide portion are metal silicide; Wherein said first metal silicide portion is the metal silicide of additional vacant active area top, and said second metal silicide portion is the metal silicide of said shallow trench top.
9. according to claim 6 or 7 described electronic programmable fuses; It is characterized in that; The upper surface of the integral body that said additional vacant active area and said shallow trench constituted is uneven, thereby causes the polysilicon fuse surface of being made up of said first metal silicide portion and said second metal silicide portion of their tops also uneven.
10. according to claim 6 or 7 described electronic programmable fuses, it is characterized in that, be furnished with contact hole on said first electrode and said second electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210264372.6A CN102760720B (en) | 2012-07-27 | 2012-07-27 | Electronic programmable fuse wire vacant active area adding method and electronic programmable fuse wire |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210264372.6A CN102760720B (en) | 2012-07-27 | 2012-07-27 | Electronic programmable fuse wire vacant active area adding method and electronic programmable fuse wire |
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| CN102760720A true CN102760720A (en) | 2012-10-31 |
| CN102760720B CN102760720B (en) | 2015-05-20 |
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| CN201210264372.6A Active CN102760720B (en) | 2012-07-27 | 2012-07-27 | Electronic programmable fuse wire vacant active area adding method and electronic programmable fuse wire |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103915410A (en) * | 2013-01-08 | 2014-07-09 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and manufacturing method of semiconductor device |
| CN109346435A (en) * | 2016-12-02 | 2019-02-15 | 乐清市风杰电子科技有限公司 | The manufacturing method of programmable polysilicon fuse structure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6271574B1 (en) * | 1998-05-14 | 2001-08-07 | Stmicroelectronics S.A. | Integrated circuit fuse with localized fusing point |
| CN1499627A (en) * | 2002-10-31 | 2004-05-26 | 富士通株式会社 | Semiconductor device with fuse |
| CN101068015A (en) * | 2006-04-26 | 2007-11-07 | 三星电子株式会社 | Devices and methods for constructing electrically programmable integrated fuses for low power applications |
-
2012
- 2012-07-27 CN CN201210264372.6A patent/CN102760720B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6271574B1 (en) * | 1998-05-14 | 2001-08-07 | Stmicroelectronics S.A. | Integrated circuit fuse with localized fusing point |
| CN1499627A (en) * | 2002-10-31 | 2004-05-26 | 富士通株式会社 | Semiconductor device with fuse |
| CN101068015A (en) * | 2006-04-26 | 2007-11-07 | 三星电子株式会社 | Devices and methods for constructing electrically programmable integrated fuses for low power applications |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103915410A (en) * | 2013-01-08 | 2014-07-09 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and manufacturing method of semiconductor device |
| CN109346435A (en) * | 2016-12-02 | 2019-02-15 | 乐清市风杰电子科技有限公司 | The manufacturing method of programmable polysilicon fuse structure |
| CN109346435B (en) * | 2016-12-02 | 2023-09-05 | 深圳市威能腾达科技有限公司 | Method for manufacturing programmable polysilicon fuse structure |
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| CN102760720B (en) | 2015-05-20 |
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