US9589967B2 - Fast programming antifuse and method of manufacture - Google Patents
Fast programming antifuse and method of manufacture Download PDFInfo
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- US9589967B2 US9589967B2 US14/159,617 US201414159617A US9589967B2 US 9589967 B2 US9589967 B2 US 9589967B2 US 201414159617 A US201414159617 A US 201414159617A US 9589967 B2 US9589967 B2 US 9589967B2
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- H01L27/11206—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (19)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/159,617 US9589967B2 (en) | 2014-01-21 | 2014-01-21 | Fast programming antifuse and method of manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/159,617 US9589967B2 (en) | 2014-01-21 | 2014-01-21 | Fast programming antifuse and method of manufacture |
Publications (2)
Publication Number | Publication Date |
---|---|
US20150206892A1 US20150206892A1 (en) | 2015-07-23 |
US9589967B2 true US9589967B2 (en) | 2017-03-07 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US14/159,617 Active 2034-07-20 US9589967B2 (en) | 2014-01-21 | 2014-01-21 | Fast programming antifuse and method of manufacture |
Country Status (1)
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US (1) | US9589967B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107731784B (en) * | 2017-10-31 | 2023-07-04 | 长鑫存储技术有限公司 | Semiconductor device anti-fuse structure and preparation method thereof |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050073898A1 (en) * | 2003-03-31 | 2005-04-07 | Scheuerlein Roy E. | Apparatus and method for disturb-free programming of passive element memory cells |
US7064410B2 (en) | 2002-04-17 | 2006-06-20 | International Business Machines Corporation | MOS antifuse with low post-program resistance |
US7256471B2 (en) | 2005-03-31 | 2007-08-14 | Freescale Semiconductor, Inc. | Antifuse element and electrically redundant antifuse array for controlled rupture location |
US7553704B2 (en) | 2005-06-28 | 2009-06-30 | Freescale Semiconductor, Inc. | Antifuse element and method of manufacture |
US7723820B2 (en) | 2006-12-28 | 2010-05-25 | International Business Machines Corporation | Transistor based antifuse with integrated heating element |
US7880266B2 (en) | 2004-11-12 | 2011-02-01 | International Business Machines Corporation | Four-terminal antifuse structure having integrated heating elements for a programmable circuit |
US20110108926A1 (en) * | 2009-11-12 | 2011-05-12 | National Semiconductor Corporation | Gated anti-fuse in CMOS process |
US20120313180A1 (en) * | 2011-03-11 | 2012-12-13 | Texas Instruments Incorporated | Non-volatile anti-fuse with consistent rupture |
US8350264B2 (en) | 2010-07-14 | 2013-01-08 | International Businesss Machines Corporation | Secure anti-fuse with low voltage programming through localized diffusion heating |
US20130161761A1 (en) * | 2010-06-21 | 2013-06-27 | Kilopass Technology, Inc. | One-time programmable memory and method for making the same |
US20140175601A1 (en) * | 2012-12-24 | 2014-06-26 | United Microelectronics Corp. | Anti-fuse structure and anti-fuse programming method |
US20150097236A1 (en) * | 2013-10-03 | 2015-04-09 | Macronix International Co., Ltd. | Semiconductor Device And Method Of Fabricating Same |
US9105310B2 (en) * | 2013-02-05 | 2015-08-11 | Qualcomm Incorporated | System and method of programming a memory cell |
-
2014
- 2014-01-21 US US14/159,617 patent/US9589967B2/en active Active
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7064410B2 (en) | 2002-04-17 | 2006-06-20 | International Business Machines Corporation | MOS antifuse with low post-program resistance |
US20050073898A1 (en) * | 2003-03-31 | 2005-04-07 | Scheuerlein Roy E. | Apparatus and method for disturb-free programming of passive element memory cells |
US7982285B2 (en) | 2004-11-12 | 2011-07-19 | International Business Machines Corporation | Antifuse structure having an integrated heating element |
US7880266B2 (en) | 2004-11-12 | 2011-02-01 | International Business Machines Corporation | Four-terminal antifuse structure having integrated heating elements for a programmable circuit |
US7256471B2 (en) | 2005-03-31 | 2007-08-14 | Freescale Semiconductor, Inc. | Antifuse element and electrically redundant antifuse array for controlled rupture location |
US7553704B2 (en) | 2005-06-28 | 2009-06-30 | Freescale Semiconductor, Inc. | Antifuse element and method of manufacture |
US7723820B2 (en) | 2006-12-28 | 2010-05-25 | International Business Machines Corporation | Transistor based antifuse with integrated heating element |
US20110108926A1 (en) * | 2009-11-12 | 2011-05-12 | National Semiconductor Corporation | Gated anti-fuse in CMOS process |
US20130161761A1 (en) * | 2010-06-21 | 2013-06-27 | Kilopass Technology, Inc. | One-time programmable memory and method for making the same |
US8350264B2 (en) | 2010-07-14 | 2013-01-08 | International Businesss Machines Corporation | Secure anti-fuse with low voltage programming through localized diffusion heating |
US20120313180A1 (en) * | 2011-03-11 | 2012-12-13 | Texas Instruments Incorporated | Non-volatile anti-fuse with consistent rupture |
US20140175601A1 (en) * | 2012-12-24 | 2014-06-26 | United Microelectronics Corp. | Anti-fuse structure and anti-fuse programming method |
US9105310B2 (en) * | 2013-02-05 | 2015-08-11 | Qualcomm Incorporated | System and method of programming a memory cell |
US20150097236A1 (en) * | 2013-10-03 | 2015-04-09 | Macronix International Co., Ltd. | Semiconductor Device And Method Of Fabricating Same |
US20160087083A1 (en) * | 2013-10-03 | 2016-03-24 | Macronix International Co., Ltd. | Semiconductor device and method of fabricating same |
Also Published As
Publication number | Publication date |
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US20150206892A1 (en) | 2015-07-23 |
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