CN102915961B - Manufacturing method of electronic programmable fuse device - Google Patents
Manufacturing method of electronic programmable fuse device Download PDFInfo
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- CN102915961B CN102915961B CN201210451795.9A CN201210451795A CN102915961B CN 102915961 B CN102915961 B CN 102915961B CN 201210451795 A CN201210451795 A CN 201210451795A CN 102915961 B CN102915961 B CN 102915961B
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- programmable fuse
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- photoetching
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Abstract
A manufacturing method of an electronic programmable fuse device comprises the following steps: a device region is divided into a non-electronic programmable fuse region and an electronic programmable fuse region; a first photoetching for the non-electronic programmable fuse region is carried out, wherein a first photoresist is adopted during the first photoetching; a second photoetching for the electronic programmable fuse region is carried out, wherein a second photoresist is adopted during the second photoetching; and the second photoresist is faster than the first photoresist in the exposure speed. According to the invention, different photoresists are adopted to carry out exposure for a common region and the electronic programmable fuse device; and the photoresist with faster exposure speed is adopted for the electronic programmable region, thus the roughness of the edge of a polysilicon fuse is enlarged, current density changes of the electronic programmable fuse device are increased, and the fusing performance of the electronic programmable fuse device is improved.
Description
Technical field
The present invention relates to semiconductor fabrication process, and be particularly related to electronic programmable fuse-wire device manufacture method.
Background technology
A kind of technology that electronic programmable fuse (electrically programmable fuse, i.e. eFuse) technology utilizes metal electro-migration phenomenon to grow up, its energy and CMOS technology compatibility, area is little.Mainly be used as and carry out redundancy, field repair chip, to chip reprogramming, make electronic product become more intelligent.
With reference to figure 1, in common electronic programmable fuse-wire device domain, between electrode 2 and electrode 3, be connected by polysilicon fuse 1.When between two electrodes in addition when high current, under the effect of higher current density, relevant atom will move along electron motion direction, forms cavity, finally opens circuit, and this phenomenon is exactly electromigration (EM) phenomenon.Because the resistance of polysilicon fuse before fusing and after fusing can change, conventionally the resistance after fusing is 10 ~ 1000 times of fusing resistance before, electronic programmable fuse-wire device utilizes the caused resistance variations of the ELECTROMIGRATION PHENOMENON of polysilicon fuse just, thereby realizes programmable object.
Electric current distribution in ELECTROMIGRATION PHENOMENON and the polysilicon fuse of electronic programmable fuse-wire device is closely related, when the electric current distribution in polysilicon fuse inhomogeneous (there is current-density gradient) time, relevant atom is subject to electronics wind behaviour difference in two electrode direction, thereby more easily there is ELECTROMIGRATION PHENOMENON, polysilicon fuse is more easily fused.
Summary of the invention
The invention provides a kind of electronic programmable fuse-wire device manufacture method, strengthen the fusing performance of electronic programmable fuse-wire device.
In order to realize above-mentioned technical purpose, the present invention proposes a kind of electronic programmable fuse-wire device manufacture method, comprising: device area is divided into non-electronic programmable fuse region and electronic programmable fuse region; The first photoetching is carried out in described non-electronic programmable fuse region, wherein, while carrying out described the first photoetching, adopt the first photoresist; The second photoetching is carried out in described electronic programmable fuse region, wherein, adopt the second photoresist while carrying out described the second photoetching, the film speed of described the second photoresist is faster than described the first photoresist.
Optionally, after being also included in and carrying out the first photoetching, form non-electronic programmable fuse zone map and after carrying out the second photoetching, form electronic programmable fuse region region pattern by follow-up development etching technics by follow-up development etching technics.
Optionally, described the first photoresist is the photoresist to the insensitive formula of exposure, and described the second photoresist is the photoresist to the responsive formula of exposure.
Compared to prior art, electronic programmable fuse-wire device manufacture method of the present invention takes different photoresists to expose to normal areas and electronic programmable fuse-wire device region respectively, adopt film speed photoresist faster in electronic programmable fuse region, the edge roughness of polysilicon fuse is increased, thereby increase the current density change in electronic programmable fuse-wire device, strengthened the fusing performance of electronic programmable fuse-wire device.
Brief description of the drawings
Fig. 1 is conventional electronic programmable fuse-wire device domain schematic diagram;
Fig. 2 is the schematic flow sheet of a kind of execution mode of electronic programmable fuse-wire device manufacture method of the present invention;
Fig. 3 is for adopting the electronic programmable fuse-wire device domain schematic diagram forming after electronic programmable fuse-wire device manufacture method of the present invention.
Embodiment
Below in conjunction with specific embodiments and the drawings, the present invention will be described in detail.
With reference to figure 2, the invention provides a kind of electronic programmable fuse-wire device manufacture method, comprising:
Step S1, is divided into non-electronic programmable fuse region and electronic programmable fuse region by device area;
Step S2, carries out the first photoetching to above-mentioned non-electronic programmable fuse region, wherein, adopts the first photoresist while carrying out described the first photoetching;
Step S3, the second photoetching is carried out in above-mentioned electronic programmable fuse region, wherein, while carrying out described the second photoetching, adopt the second photoresist, the film speed of described the second photoresist is faster than described the first photoresist, thereby can form and have coarse fuse edge in described electronic programmable fuse region.
Inventor finds through test of many times and practice, and because the film speed of described the second photoresist is faster than described the first photoresist, through after exposure process, the polysilicon fuse edge forming is more coarse.In general, adopt respectively the first photoresist and second photoresist with different exposure rate to carry out Twi-lithography, the edge roughness of the polysilicon fuse forming can be increased to and be exceeded 40% by conventional less than 10%.In concrete practice application, described the first photoresist can adopt the photoresist to the insensitive formula of exposure, and described the second photoresist can adopt the photoresist to the responsive formula of exposure.
In addition, step S2 forms non-electronic programmable fuse zone map by subsequent technique after also can being included in and carrying out described the first photoetching; Step S3 forms electronic programmable fuse region region pattern by subsequent technique after also can being included in and carrying out described the second photoetching.
With reference to figure 3, in a kind of embodiment of employing electronic programmable fuse-wire device manufacture method of the present invention, after the related process such as development etching, in formed electronic programmable fuse-wire device domain, the polysilicon fuse 100 of connecting electrode 2 and electrode 3 becomes very coarse, thereby has changed the typical sizes D of polysilicon fuse.Now, when between electrode 2 and electrode 3 in addition when high electric current, the uniformity of current density variation of polysilicon fuse 100, thus strengthen the electric migration performance of electronic programmable fuse, and then strengthened the fusing performance of electronic programmable fuse-wire device.
Compared to prior art, the present invention is in the process of making electronic programmable fuse-wire device, the device for the treatment of photoetching is divided into non-electronic programmable fuse region and electronic programmable fuse region, and adopt the photoresist with different exposure rate successively above-mentioned zones of different to be carried out to photoetching, especially adopt film speed photoresist faster in electronic programmable fuse region, thereby improve the roughness at polysilicon fuse edge, make the current density in electronic programmable fuse-wire device become large, to strengthen the fusing performance of electronic programmable fuse-wire device.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement to make possible variation and amendment to technical solution of the present invention; therefore; every content that does not depart from technical solution of the present invention; any simple modification, equivalent variations and the modification above embodiment done according to technical spirit of the present invention, all belong to the protection range of technical solution of the present invention.
Claims (3)
1. an electronic programmable fuse-wire device manufacture method, is characterized in that, comprising:
Device area is divided into non-electronic programmable fuse region and electronic programmable fuse region;
The first photoetching is carried out in described non-electronic programmable fuse region, wherein, while carrying out described the first photoetching, adopt the first photoresist;
The second photoetching is carried out in described electronic programmable fuse region, wherein, adopt the second photoresist while carrying out described the second photoetching, under identical exposure, the film speed of described the second photoresist is faster than the film speed of described the first photoresist.
2. electronic programmable fuse-wire device manufacture method as claimed in claim 1, it is characterized in that, also comprise: after carrying out described the first photoetching, form non-electronic programmable fuse zone map by follow-up development etching technics, and after carrying out described the second photoetching, form electronic programmable fuse region region pattern by follow-up development etching technics.
3. electronic programmable fuse-wire device manufacture method as claimed in claim 1, is characterized in that, described the first photoresist is the photoresist to the insensitive formula of exposure, and described the second photoresist is the photoresist to the responsive formula of exposure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210451795.9A CN102915961B (en) | 2012-11-12 | 2012-11-12 | Manufacturing method of electronic programmable fuse device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210451795.9A CN102915961B (en) | 2012-11-12 | 2012-11-12 | Manufacturing method of electronic programmable fuse device |
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| CN102915961A CN102915961A (en) | 2013-02-06 |
| CN102915961B true CN102915961B (en) | 2014-09-03 |
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| CN201210451795.9A Active CN102915961B (en) | 2012-11-12 | 2012-11-12 | Manufacturing method of electronic programmable fuse device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108766952A (en) * | 2018-05-22 | 2018-11-06 | 武汉新芯集成电路制造有限公司 | Electrically programmable fuse structure, integrated circuit and electronic device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100477202C (en) * | 2006-03-09 | 2009-04-08 | 国际商业机器公司 | Electrically programmable fuse structure and manufacturing method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04243150A (en) * | 1991-01-18 | 1992-08-31 | Nec Corp | Polysilicon fuse |
| US7067359B2 (en) * | 2004-03-26 | 2006-06-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating an electrical fuse for silicon-on-insulator devices |
| US20080308900A1 (en) * | 2007-06-12 | 2008-12-18 | International Business Machines Corporation | Electrical fuse with sublithographic dimension |
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2012
- 2012-11-12 CN CN201210451795.9A patent/CN102915961B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100477202C (en) * | 2006-03-09 | 2009-04-08 | 国际商业机器公司 | Electrically programmable fuse structure and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| JP特开平4-243150A 1992.08.31 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108766952A (en) * | 2018-05-22 | 2018-11-06 | 武汉新芯集成电路制造有限公司 | Electrically programmable fuse structure, integrated circuit and electronic device |
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| CN102915961A (en) | 2013-02-06 |
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