CN104538393B - A kind of chip, the production of chip and application method - Google Patents
A kind of chip, the production of chip and application method Download PDFInfo
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- CN104538393B CN104538393B CN201410790142.2A CN201410790142A CN104538393B CN 104538393 B CN104538393 B CN 104538393B CN 201410790142 A CN201410790142 A CN 201410790142A CN 104538393 B CN104538393 B CN 104538393B
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Abstract
The present invention relates to a kind of chip, the production of chip and application method.The chip includes：Protective layer, addition have conductive particle；Silicon chip, including：Sealing ring, perforate is disposed with, the tapping is disposed with wire, and the first line end of the wire is connected with the core circuit of the silicon chip；Scribe line, the second line end of the wire extend to the scribe line；Core circuit, including detection module, the detection module, which is used to detect between the wire as caused by the conductive particle, to be electrically connected information and exports the electrical connection information.The present invention need not realize the unclonable function of the physics of chip using special technique can, and the stability for the unclonable function of physics of improving chip.
Description
Technical field
The present invention relates to production and the application method in chip secure field, more particularly to a kind of chip, chip.
Background technology
Chip in the fabrication process, can be inevitably generated difference, and these differences have and can not imitate and answer in itself
The characteristic of system, just as the fingerprint of people, even so the manufacturer of chip is also impossible to copy from another chip
The same information, this function of chip are referred to as the unclonable function of physics.The unclonable technology of physics is one group miniature
Circuit, by extracting the difference being inevitably generated in chip manufacturing proces, uncertain information is generated, using corresponding
Response mechanism verified that physics unclonable technology causes chip to have anti-imitated function.
In the prior art, chip realizes that the method for the unclonable function of physics has：(1) the unclonable function of coating physics
Method, this method are that the top-level metallic of special comb-like pattern is placed on chip, and are filled particularly in comb metal
Passivation material, passivation material have the dielectric particle of random doping, and the dielectric particle of random distribution can cause top layer golden
The randomness of capacitance profile between category, by the use of the electric capacity as the characteristic of chip, but this method is needed by special technique
The unclonable function of physics of chip can be realized；(2) the unclonable functional method of circuit delay physics, this method are to utilize core
The random change postponed in piece on electronic circuit and line is turned to the characteristic of chip, because even two chips of same design,
Same circuit, such as：Ring oscillator, delay also can be different, but this method is easily by environment temperature, voltage and chip
The influence of manufacturing process so that the unclonable functional lability of physics, the malleable of chip.
The content of the invention
The present invention provides a kind of chip, the production of chip and application method, and being implemented without can using special technique
To realize the unclonable function of the physics of chip, and the stability for the unclonable function of physics of improving chip.
The present invention provides a kind of chip, including：
Protective layer, addition have conductive particle；
Silicon chip, including：
Sealing ring, is disposed with perforate, and the tapping is disposed with wire, the first line end and the silicon chip of the wire
Core circuit connects；
Scribe line, the second line end of the wire extend to the scribe line；
Core circuit, including detection module, the detection module are used to detect between the wire by the conductive particle
Caused electrical connection information simultaneously exports the electrical connection information.
The present invention also provides a kind of production method of chip, including：
In the fabrication stage of silicon chip, the perforate on the sealing ring of the silicon chip, wire is arranged in tapping, the wire
First line end is connected to core circuit, and the second line end of the wire is extended in scribe line；
Detection module is arranged in the core circuit；
In the encapsulated phase of the silicon chip, the silicon chip is cut down along the scribe line from wafer, exposed
The wire, conductive particle is added in the protective layer of the silicon chip, the silicon chip, the detection are covered using the protective layer
Module is used to detect electrically connects information between the wire as caused by the conductive particle.
The present invention also provides a kind of application method of chip, and the chip includes protective layer, silicon chip, added in the protective layer
Entering has conductive particle, and the silicon chip includes sealing ring, scribe line and core circuit, and perforate is disposed with the sealing ring, described
Wire is disposed with perforate, the first line end of the wire is connected with the core circuit, the second line end extension of the wire
To the scribe line, methods described includes：
Detect and electrically connect information as caused by the conductive particle between the wire；
Export the electrical connection information.
In the present invention, by the thing for electrically connecting information acquisition chip between wire in detection chip as caused by conductive particle
Manage unclonable function, it is not necessary to manufactured using special technique, and led by the tapping arrangement in silicon chip sealing ring
Line, the information that electrically connected as caused by conductive particle that conductive particle is added into protective layer to obtain is random, stable, is kept away
Exempted from the unclonable function of physics of chip is easily influenceed by environment temperature, voltage and chip manufacturing process, improves chip
The unclonable function of physics stability.
Brief description of the drawings
Fig. 1 is the structural representation of chip first embodiment of the present invention；
Fig. 2 is the structural representation of the instantiation of chip first embodiment of the present invention；
Fig. 3 is the structural representation of another instantiation of chip first embodiment of the present invention；
Fig. 4 is the structural representation of chip second embodiment of the present invention；
Fig. 5 is the schematic flow sheet of the production method embodiment of chip of the present invention；
Fig. 6 is the schematic flow sheet of the application method first embodiment of chip of the present invention；
Fig. 7 is the schematic flow sheet of the instantiation of the application method first embodiment of chip of the present invention；
Fig. 8 is the schematic flow sheet of the application method second embodiment of chip of the present invention；
Fig. 9 is step 82 idiographic flow schematic diagram in the application method second embodiment of chip of the present invention；
Figure 10 is the schematic flow sheet of the instantiation of the application method second embodiment of chip of the present invention.
Embodiment
With reference to specification drawings and specific embodiments, the invention will be further described.
As shown in figure 1, be the structural representation of chip first embodiment of the present invention, the chip can include protective layer 11,
Silicon chip 12, protective layer 11 are covered in the periphery of silicon chip 12, and being added in protective layer 11 has conductive particle 111, and silicon chip 12 includes：Core
Circuit 121, sealing ring 122, scribe line 123, sealing ring 122 is in the periphery of core circuit 121, and sealing ring 122 and core
There is interval between circuit 121, scribe line 123 is in sealing ring 122 and chip protection layer 11 in the periphery of sealing ring 122
Between, perforate is disposed with sealing ring 122, tapping is disposed with wire 124, the first line end and the core circuit 121 of wire 124
Connection, the second line end of wire 124 extend to scribe line 123.
In the present embodiment, core circuit 121 can specifically include detection module 1211, and detection module 1211 is used to detect
By electrical connection information caused by conductive particle 111 and the electrical connection information is exported between wire 124.
It should be noted that size, the shape of each conductive particle 111 are not necessarily identical, and conductive particle 111 is in protective layer
Position in 11 is random.In addition, conductive particle 111 be between small and each conductive particle 111 distance be it is sufficiently large,
So conductive particle 111 does not influence the insulating properties of protective layer 11, the electrical characteristic of protective layer 11 is with adding before conductive particle 111
Unanimously.
After being packaged to silicon chip 12, some conductive particles 111 cause the of the wire 124 being exposed in scribe line 123
Electrical connection is produced between two wire terminal, such as：Short circuit, but which position short circuit is formed in, it is completely unforeseen, and
Can not replicate, so, attacker put back to a different silicon chip in untouched dress replace original silicon chip can not be formed with
The former duplicate short dot of silicon chip.
In the present embodiment, conductive particle 111 is added in protective layer 11, the perforate and in tapping on sealing ring 122
Wire 124 is arranged, then is likely to form between conductive particle 111 and wire 124 and electrically connects information, detection module 1211 detects wire
Information is electrically connected caused by conductive particle 111 between 124 and exported, it is not necessary to special manufacturing process, chip can root
The unclonable function of information realization physics is electrically connected accordingly.Further, since it is the tapping arrangement wire in silicon chip sealing ring 122
124, conductive particle 111 is added in protective layer 11, so the obtained electrical connection information caused by conductive particle 111 is random
, it is stable, avoid the unclonable function of physics of chip easily by the shadow of environment temperature, voltage and chip manufacturing process
Ring, improve the stability of the unclonable function of physics of chip.
Alternatively, in the present embodiment, it can be short circuit information to electrically connect information, and wire 124 can be metal wire.
Alternatively, in the present embodiment, more than two wires 124, wire 124 are disposed with the perforate on sealing ring 122
Including first line end and second line end, the minimum interval of two neighboring second line end is less than the straight of conductive particle 111
Footpath.
Such as：Referring back to the schematic diagram shown in Fig. 1, in each perforate of sealing ring 122, be disposed with two it is adjacent
Wire 124, wherein diameter of the interval of the second line end of adjacent two wires 124 less than conductive particle 111, therefore, this two
Adjacent wires 124 are exactly a possible short dot.
Alternatively, in the present embodiment, a wire 124 is disposed with the perforate on sealing ring 122, wire 124 includes
One the first line end and the line end of two or more second, the minimum interval of two neighboring second line end in different perforates are less than conduction
The diameter of particle 111.
As shown in Fig. 2 the structural representation of the instantiation for chip first embodiment of the present invention, different from Fig. 1
That a wire is arranged with the perforate of sealing ring 122, respectively wire 1, wire 2 1242, wire 3 1243,
Wire 4 1244, in scribe line 123, wire 1 has two the second line ends 12411 and 12412, and wire 2 1242 has two
Individual second line end 12421 and 12422, wire 3 1243 have two the second line ends 12431 and 12432, and wire 4 1244 has two
Second line end 12441 and 12442.In this case, the second of the second line end 12412 of wire 1 and wire 2 1242
Line end 12421 is likely to form a short dot 1, the second line end 12422 of wire 2 1242 and the second line of wire 3 1243
End 12431 is likely to form a short dot 2 22, the second line end 12432 of wire 3 1243 and the second line end of wire 4 1244
12441 are likely to form a short dot 3 23, similarly, the second line end 12411 of wire 1, the second of wire 4 1244
Second line end of other adjacent with each of which wires of line end 12442 is likely to form a short dot, so, sealing ring
Only a wire is needed to provide same amount of possible short dot in 122 each perforate.
In practice, in scribe line 123, wire can have multiple second line ends, it is possible to have a variety of combination conducts
Possible short dot.As shown in figure 3, the structural representation of another instantiation for chip first embodiment of the present invention, close
A wire, respectively wire 1, wire 2 1242, wire 3 1243, wire four are arranged in the perforate of seal 122
1244, in scribe line 123, wire 1 has 3 the second line ends 12411,12412 and 12413, and wire 2 1242 has 3
Second line end 12421,12422 and 12423, wire 3 1243 have 3 the second line ends 12431,12432 and 12433, wire four
1244 have 3 the second line ends 12441,12442 and 12443.Now, the second line end 12411 and wire two of wire 1
1242 the second line end 12421 is likely to form short dot 1, the second line end 12422 of wire 2 1242 and wire 3 1243
Second line end 12431 is likely to form short dot 2 32, the second line end 12412 of wire 1 and the second line of wire 3 1243
End 12432 is likely to form short dot 3 33, the second line end 12433 of wire 3 1243 and the second line end of wire 4 1244
12441 are likely to form short dot 4 34, the second line end 12442 of wire 4 1244 and the second line end 12413 of wire 1
Short dot 5 35 is likely to form, the second line end 12423 of wire 2 1242 and the second line end 12443 of wire 4 1244 may shapes
Into short dot 6 36, therefore, 6 possible short dots are had in this case.
It should be noted that the line end of two or more second of wire is it is also assumed that be in scribe line in above-mentioned Fig. 2, Fig. 3
The multi-layer conductor leads arranged in 123, it can be connected by via (via) between wire.
As shown in figure 4, be the structural representation of chip second embodiment of the present invention, it is different from schematic diagram shown in Fig. 1 it
It is in core circuit 121 can also include nonvolatile memory 1212 and comparison module 1213, nonvolatile memory
1212 are connected with detection module 1211, and detection module 1211 is connected with comparison module 1213.
In the present embodiment, detection module 1211 is used between the packaging and testing stage detection wire 124 of chip by leading
First electrical connection information caused by electric particle 111, the first electrical connection information is saved in nonvolatile memory 1212, this
One electrical connection information can be used for electrically connecting the correctness of information in calibrating chip in the course of work of chip, in the work of chip
During work, detection module 1211 detects the second electrical connection information as caused by conductive particle 111 between wire 124；Compare mould
Block 1213 is used to compare the first electrical connection information and the second electrical connection information, and output comparative result is so that chip is according to comparative result
Take appropriate measures.
In the present embodiment, after chip completes encapsulation, wire is detected by the detection module 1211 in core circuit 121
First electrical connection and is saved in nonvolatile memory 1212 information as caused by conductive particle 111 between 124, in chip work
When making, detection module 1211 detects the second electrical connection information as caused by conductive particle 111 between wire 124, and in relatively mould
Compare the first electrical connection information and the second electrical connection information in block 1213, chip can judge the physics of chip according to comparative result
Whether unclonable function is destroyed, and is taken appropriate measures according to comparative result, improves the anti-attack ability of chip.
Alternatively, in the present embodiment, detection module 1211 and/or comparison module 1213 can use hardware circuit real
It is existing.In addition, detection module 1211 and/or comparison module 1213 can also use software to realize.
Alternatively, schematic diagram shown in Fig. 4 is referred again to, comparison module 1213 can include poor acquiring unit 12131, threshold value ratio
Compared with unit 12132, poor acquiring unit 12131 is connected with detection module 1211, threshold value comparing unit 12132 and poor acquiring unit
12131 are connected.Wherein, poor acquiring unit 12131 is used for the first electrical connection information compared with the second electrical connection information, obtains
The first electrical connection information is taken to electrically connect the difference between information with second；Threshold value comparing unit 12132 is used for difference with presetting
Threshold value be compared and export comparative result.
Alternatively, in the present embodiment, it can be short circuit information to electrically connect information, and wire 124 can be metal wire.
As shown in figure 5, the schematic flow sheet of the production method embodiment for chip of the present invention, may include steps of：
Step 51, the fabrication stage in silicon chip, the perforate on the sealing ring of silicon chip, wire, the wire are arranged in tapping
The first line end be connected to core circuit, the second line end of wire is extended in scribe line；
Step 52, detection module is arranged in core circuit；
Step 53, the encapsulated phase in silicon chip, silicon chip is cut down from wafer along scribe line, exposes wire,
Conductive particle is added in the protective layer of silicon chip, silicon chip is covered using protective layer；
Step 54, detection module are used to detect electrically connects information between wire as caused by conductive particle.
In the present embodiment, wire and the envelope in silicon chip perforate and are arranged on sealing ring by the fabrication stage in silicon chip
The dress stage adds the production method of conductive particle in the protective layer of silicon chip, and formation between wire and conductive particle can be made to be electrically connected
Information is connect, detection module is set in core circuit, letter is electrically connected as caused by conductive particle between detection module detection wire
Breath, it is not necessary to special manufacturing process, so that it may with the unclonable function of physics of the electrical connection information realization chip, and due to
It is the tapping arrangement wire in silicon chip sealing ring, conductive particle is added in protective layer, so what is obtained is led by conductive particle
The electrical connection information of cause be it is random, stable, therefore the unclonable function of physics of chip be not easy by environment temperature, voltage with
And the influence of chip manufacturing process, improve the stability of the unclonable function of physics of chip.
Alternatively, in the present embodiment, it is specially in tapping arrangement wire：More than two are disposed with perforate to lead
Line, wire include first line end and second line end, and the minimum interval of two neighboring second line end is less than conductive particle
Diameter.Fig. 1 specifically is may refer to, will not be repeated here.
Alternatively, in the present embodiment, it is specially in tapping arrangement wire：A wire is disposed with perforate, is led
Line includes first line end and the line end of two or more second, and the minimum interval of two neighboring second line end in different perforates is small
In the diameter of conductive particle.Fig. 2 and Fig. 3 specifically are may refer to, will not be repeated here.
Alternatively, in step 52, nonvolatile memory can also be arranged in core circuit, for being stored in chip
The first electrical connection information as caused by the conductive particle between the wire that the packaging and testing stage detects, this first is electrically connected
Connecing information can be used for electrically connecting the correctness of information in calibrating chip in the course of work of chip.
Alternatively, in the present embodiment, it can be short circuit information to electrically connect information, and wire can be metal wire.
As shown in fig. 6, the schematic flow sheet of the application method first embodiment for chip of the present invention, the structure of the chip can
With reference to the chip structure in foregoing chip first embodiment, will not be repeated here, this method specifically may include steps of：
Information is electrically connected as caused by conductive particle between step 61, detection module detection wire；Wherein, the first of wire
Line end is connected with core circuit；
Step 62, export the electrical connection information.
During the use of chip, this method or random start can be started when needing the unclonable function of physics
This method obtains the electrical connection information in chip.
In the present embodiment, chip can be obtained by by the electrical connection information as caused by conductive particle between detecting wire
The unclonable function of physics, it is not necessary to by special manufacturing process it is achieved that due to the perforate in silicon chip sealing ring
Place's arrangement wire, adds conductive particle in protective layer, so the obtained information that electrically connected as caused by conductive particle is random
, it is stable, therefore the unclonable function of physics of avoiding chip is easily by environment temperature, voltage and chip manufacturing process
Influence, improve the stability of the unclonable function of physics of chip.
Alternatively, in the present embodiment, it can be short circuit information to electrically connect information, and wire can be metal wire.
As shown in fig. 7, the schematic flow sheet of the instantiation for the application method first embodiment of chip of the present invention, specifically
It may include steps of：
Step 71, start to detect；
The short-circuit conditions of conductive particle and metal wire in step 72, the encapsulation of detection module detection chip
Step 73, detection module output short-circuit information.
Alternatively, as shown in figure 8, the schematic flow sheet of the application method second embodiment for chip of the present invention, the chip
Structure can refer to chip structure in foregoing chip second embodiment, will not be repeated here, specifically may include steps of：
Step 81, in the course of work of chip, detection module detection wire between as caused by conductive particle second electricity
Link information；
Step 82, comparison module compare the first electrical connection information and the second electrical connection information, and output comparative result is so as to core
Piece takes appropriate measures according to comparative result.
Wherein, the first electricity as caused by conductive particle between the packaging and testing stage of chip, detection module detection wire
Link information, the first electrical connection information is saved in nonvolatile memory.Chip in the course of the work, can timing or
Whether the unclonable function of physics that person's random start this method carrys out detection chip is destroyed, so as to which chip can be taken accordingly
Measure.
In the present embodiment, by conductive particle between the wire detected by nonvolatile memory preservation detection module
Caused first electrical connection information, and this first electrical connection information is saved in nonvolatile memory, in the work of chip
During, the second electrical connection information as caused by conductive particle between detection module detection wire, and compare the first electrical connection letter
Breath and the second electrical connection information, export comparative result, so that during chip operation, can be by this method come detection chip
The unclonable function of physics whether destroyed, improve the anti-attack ability of chip.
Alternatively, as shown in figure 9, illustrating for step 82 idiographic flow in the application method second embodiment of chip of the present invention
Figure, may include steps of：
Step 821, by first electrical connection information with second electrical connection information compared with, obtain first electrical connection information and
Difference between second electrical connection information；
Step 822, by difference compared with default threshold value and comparative result is exported, if difference is less than default threshold
Value, then the unclonable function of the physics of chip is not corrupted, and the on the contrary then unclonable function of the physics of chip is destroyed.
As shown in Figure 10, for chip of the present invention application method second embodiment instantiation schematic flow sheet, tool
Body may include steps of：
Step 101, start to detect；
The short-circuit conditions of conductive particle and metal wire in step 102, the encapsulation of detection module detection chip；
Step 103, comparison module carry out the short circuit information stored in current short-circuit conditions and nonvolatile memory
Compare, obtain difference therebetween；
Step 104, comparison module judge whether difference is less than default threshold value, if it is, performing step 105, otherwise hold
Row step 106；
Step 105, comparison module output represent the intact result of chip package；
Step 106, comparison module output represent the damaged result of chip package.
Finally it should be noted that：The above embodiments are merely illustrative of the technical solutions of the present invention and it is unrestricted, although reference
The present invention is described in detail for preferred embodiment, it will be understood by those within the art that, can be to the present invention's
Technical scheme is modified or equivalent substitution, without departing from the spirit and scope of technical solution of the present invention.
Claims (10)
- A kind of 1. chip, it is characterised in that including：Protective layer, is covered in the periphery of silicon chip, and addition has conductive particle；The silicon chip, including：Sealing ring, in the periphery of core circuit, there is interval between core circuit, be disposed with perforate, the tapping is disposed with Wire, the first line end of the wire are connected with the core circuit of the silicon chip；Scribe line, in the periphery of the sealing ring, between sealing ring and the protective layer, the second line end of the wire prolongs Extend the scribe line；Core circuit, including detection module, nonvolatile memory and comparison module；The detection module is described for detecting Information is electrically connected as caused by the conductive particle and export the electrical connection information between wire；The comparison module be used for than Compared with the output electrical connection information.
- 2. chip according to claim 1, it is characterised in that more than two wires are disposed with the perforate, it is described to lead Line includes first line end and second line end, and the minimum interval of two neighboring second line end is less than the conductive particle Diameter；OrA wire is disposed with the perforate, the wire includes first line end and the line end of two or more second, different The minimum interval of two neighboring second line end in perforate is less than the diameter of the conductive particle.
- 3. chip according to claim 1, it is characterised in that the core circuit also includes nonvolatile memory and ratio Compared with module；The detection module was used in the packaging and testing stage of chip, detected between the wire as caused by the conductive particle First electrical connection information, the described first electrical connection information is saved in the nonvolatile memory, in the work of the chip During work, the second electrical connection information as caused by the conductive particle between the wire is detected；The comparison module be used for more described first electrical connection information and it is described second electrical connection information, output comparative result with Toilet is stated chip and taken appropriate measures according to the comparative result.
- 4. the chip according to claim 1 or 3, it is characterised in that the detection module and/or the comparison module use Hardware circuit is realized.
- 5. chip according to claim 3, it is characterised in that the comparison module includes：Poor acquiring unit, for electrically connecting information compared with the described second electrical connection information by described first, described in acquisition First electrical connection information electrically connects the difference between information with described second；Threshold value comparing unit, for compared with default threshold value and the difference to be exported into comparative result.
- A kind of 6. production method of chip, it is characterised in that including：In the fabrication stage of silicon chip, the perforate on the sealing ring of the silicon chip, tapping arrange wire, the first of the wire Line end is connected to core circuit, and the second line end of the wire is extended in scribe line；Detection module is arranged in the core circuit；In the encapsulated phase of the silicon chip, the silicon chip is cut down along the scribe line from wafer, exposed described Wire, conductive particle is added in the protective layer of the silicon chip, the silicon chip, the detection module are covered using the protective layer For detecting between the wire information is electrically connected as caused by the conductive particle.
- 7. the production method of chip according to claim 6, it is characterised in that described specific in tapping arrangement wire For：More than two wires are disposed with the perforate, the wire includes first line end and second line end, phase The minimum interval of adjacent two the second line ends is less than the diameter of the conductive particle；OrA wire is disposed with the perforate, the wire includes first line end and the line end of two or more second, no Minimum interval with two neighboring second line end in perforate is less than the diameter of the conductive particle.
- 8. the production method of chip according to claim 6, it is characterised in that also include：Nonvolatile memory is arranged in the core circuit, is surveyed for storing the detection module in the encapsulation of the chip The first electrical connection information as caused by the conductive particle between the wire that the examination stage detects.
- 9. a kind of application method of chip, it is characterised in that the chip includes protective layer, silicon chip, the protective layer, is covered in The periphery of the silicon chip and wherein addition have conductive particle, and the silicon chip includes sealing ring, scribe line and core circuit:Sealing ring, in the periphery of core circuit, there is interval between core circuit, be disposed with perforate, the tapping is disposed with Wire, the first line end of the wire are connected with the core circuit of the silicon chip；Scribe line, in the periphery of the sealing ring, between sealing ring and the protective layer, the second line end of the wire prolongs Extend the scribe line；Core circuit, including detection module, nonvolatile memory and comparison module；Perforate is disposed with the sealing ring of core circuit periphery, is disposed with wire in the perforate, the of the wire One line end is connected with the core circuit, and the second line end of the wire extends to the scribe line, and methods described includes：Detect and electrically connect information as caused by the conductive particle between the wire；Export the electrical connection information.
- 10. the application method of chip according to claim 9, it is characterised in that by institute between the detection wire Electrical connection information is specially caused by stating conductive particle：In the packaging and testing stage of the chip, the first electrical connection letter as caused by the conductive particle between the wire is detected Breath, the described first electrical connection information is saved in nonvolatile memory；Methods described also includes：In the course of work of the chip, the second electrical connection letter as caused by the conductive particle between the wire is detected Breath；Compare the first electrical connection information and the second electrical connection information, output comparative result is so that the chip is according to institute Comparative result is stated to take appropriate measures.
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| CN201410790142.2A CN104538393B (en) | 2014-10-14 | 2014-12-17 | A kind of chip, the production of chip and application method |
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| CN201410542156 | 2014-10-14 | ||
| CN2014105421562 | 2014-10-14 | ||
| CN201410790142.2A CN104538393B (en) | 2014-10-14 | 2014-12-17 | A kind of chip, the production of chip and application method |
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| CN104538393B true CN104538393B (en) | 2018-02-06 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN204348702U (en) * | 2014-10-14 | 2015-05-20 | 昆腾微电子股份有限公司 | A kind of chip |
| CN108109968B (en) * | 2016-11-24 | 2020-10-30 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and manufacturing method thereof |
| CN108229224B (en) * | 2016-12-22 | 2020-03-10 | 中芯国际集成电路制造(上海)有限公司 | Physical unclonable chip and manufacturing method thereof |
| CN107918741A (en) * | 2017-11-24 | 2018-04-17 | 北京中电华大电子设计有限责任公司 | A kind of reinforced electric line structure for realizing the unclonable function of physics |
| US11842946B2 (en) * | 2021-03-26 | 2023-12-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor package having an encapsulant comprising conductive fillers and method of manufacture |
| CN113363218B (en) * | 2021-06-02 | 2023-02-07 | 杭州创式云科技有限公司 | Intelligent chip of internet of things and production system thereof |
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| CN103426778A (en) * | 2012-05-15 | 2013-12-04 | Nxp股份有限公司 | Tamper resistant IC (integrated circuit) |
| CN204348702U (en) * | 2014-10-14 | 2015-05-20 | 昆腾微电子股份有限公司 | A kind of chip |
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2014
- 2014-12-17 CN CN201420806927.XU patent/CN204348702U/en active Active
- 2014-12-17 CN CN201410790142.2A patent/CN104538393B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101292466A (en) * | 2005-10-17 | 2008-10-22 | 皇家飞利浦电子股份有限公司 | Integrated physical unclonable function (PUF) with combined sensor and display |
| CN101326757A (en) * | 2005-12-14 | 2008-12-17 | Nxp股份有限公司 | On-chip estimation of key-extraction parameters for physical tokens |
| CN102104480A (en) * | 2009-12-17 | 2011-06-22 | Nxp股份有限公司 | Token comprising improved physical unclonable function |
| CN103426778A (en) * | 2012-05-15 | 2013-12-04 | Nxp股份有限公司 | Tamper resistant IC (integrated circuit) |
| CN204348702U (en) * | 2014-10-14 | 2015-05-20 | 昆腾微电子股份有限公司 | A kind of chip |
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| CN204348702U (en) | 2015-05-20 |
| CN104538393A (en) | 2015-04-22 |
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