KR101339953B1 - Method for producing carbon nanotube semiconductor device - Google Patents
Method for producing carbon nanotube semiconductor device Download PDFInfo
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- KR101339953B1 KR101339953B1 KR1020130002440A KR20130002440A KR101339953B1 KR 101339953 B1 KR101339953 B1 KR 101339953B1 KR 1020130002440 A KR1020130002440 A KR 1020130002440A KR 20130002440 A KR20130002440 A KR 20130002440A KR 101339953 B1 KR101339953 B1 KR 101339953B1
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- South Korea
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- carbon nanotubes
- semiconductor device
- source
- drain electrode
- photosensitive material
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 239000002041 carbon nanotube Substances 0.000 title claims abstract description 65
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims abstract description 38
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 27
- 229910021404 metallic carbon Inorganic materials 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000012212 insulator Substances 0.000 claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 25
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 238000009832 plasma treatment Methods 0.000 description 13
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 5
- 239000002109 single walled nanotube Substances 0.000 description 5
- 239000002079 double walled nanotube Substances 0.000 description 4
- 239000002048 multi walled nanotube Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000002116 nanohorn Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
- H01L29/4975—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 being a silicide layer, e.g. TiSi2
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Thin Film Transistor (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
A method of manufacturing a carbon nanotube semiconductor device is disclosed. The carbon nanotube semiconductor device manufacturing method includes applying a photosensitive material to a semiconductor device including a channel layer including an insulator substrate, a source-drain electrode, and carbon nanotubes; Applying a predetermined voltage to the source-drain electrode to remove the photosensitive material coated on the metallic carbon nanotubes in the channel layer, and performing heat treatment on the semiconductor device for a predetermined time to remove the metallic carbon nanotubes. Steps.
Description
The present invention relates to a method for manufacturing a carbon nanotube semiconductor device.
Carbon nanotube transistors are nanowire field effect transistors. They are complementary metals (CMOS) due to their excellent electron and hole mobility, heat and light stability, and unique flexibility. Research has been actively conducted in various fields such as various semiconductor devices including various types of memory devices including oxide semiconductor inverters and various memory devices.
Carbon nanotubes can be classified into single-walled carbon nanotubes (SWCNTs), double-walled carbon nanotubes (DWCNTs), multi-walled carbon nanotubes (MWCNTs), ropes, carbon nanohorns, and fullerene-embedded types. Tubes and metallic carbon nanotubes are present in a mixture.
For example, in the case of single-walled carbon nanotubes, about one third is metallic carbon nanotubes and the other is semiconducting carbon nanotubes.
In the case of manufacturing a semiconductor device using carbon nanotubes, if a high on-off ratio is required or a semiconductor gap is required, there is a problem that its use is limited due to metallic carbon nanotubes.
At this time, as a method for selectively removing the metallic carbon nanotubes, a high voltage is applied to the source-drain electrode to remove the metallic carbon nanotubes having low resistance by heat.
However, this method requires a high temperature of about 600 degrees or more, so that the insulator substrate layer may be damaged by high heat.
Korean Patent Publication No. 2012-0126585 discloses a method for controlling the amount of carbon nanotubes that can secure the adsorption amount of carbon nanotubes uniformly through an oxygen plasma treatment process, and a method of manufacturing carbon nanotube devices using the same. However, in this case, there is a problem that the insulator substrate and the semiconducting carbon nanotubes are also directly affected by the oxygen plasma treatment process.
SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a method for manufacturing a carbon nanotube semiconductor device capable of selectively removing metallic carbon nanotubes while protecting an insulator substrate from external heat and at the same time preventing performance degradation on the semiconductor device. have.
According to an aspect of the present invention, the method includes: applying a photosensitive material to a semiconductor device including a channel layer including an insulator substrate, a source-drain electrode, and carbon nanotubes; Applying a predetermined voltage to the source-drain electrode to remove the photosensitive material coated on the metallic carbon nanotubes in the channel layer, and performing heat treatment on the semiconductor device for a predetermined time to remove the metallic carbon nanotubes. It provides a carbon nanotube semiconductor device manufacturing method comprising the step.
The method of manufacturing a carbon nanotube semiconductor device according to the present invention can selectively remove metallic carbon nanotubes while protecting an insulator substrate from external heat and preventing performance degradation on the semiconductor device.
1 to 6 are cross-sectional views illustrating a method for manufacturing a carbon nanotube semiconductor device according to an embodiment of the present invention;
7 to 9 are plan views illustrating a method of manufacturing a carbon nanotube semiconductor device according to an embodiment of the present invention.
The present invention is capable of various modifications and various embodiments, and specific embodiments are illustrated and described in the drawings. It should be understood, however, that the invention is not intended to be limited to the particular embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
The terms including ordinal, such as second, first, etc., may be used to describe various elements, but the elements are not limited to these terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the second component may be referred to as a first component, and similarly, the first component may also be referred to as a second component. And / or < / RTI > includes any combination of a plurality of related listed items or any of a plurality of related listed items.
When a component is referred to as being "connected" or "connected" to another component, it may be directly connected to or connected to that other component, but it may be understood that other components may be present in between. Should be. On the other hand, when an element is referred to as being "directly connected" or "directly connected" to another element, it should be understood that there are no other elements in between.
The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms "comprise" or "have" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, components, or a combination thereof.
Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.
Hereinafter, embodiments will be described in detail with reference to the accompanying drawings, wherein like or corresponding elements are denoted by the same reference numerals, and redundant description thereof will be omitted.
1 to 6 are cross-sectional views illustrating a method for manufacturing a carbon nanotube semiconductor device according to an embodiment of the present invention, and FIGS. 7 to 9 illustrate a method for manufacturing a carbon nanotube semiconductor device according to an embodiment of the present invention. It is a top view for doing this.
A method of manufacturing a carbon nanotube semiconductor device according to an embodiment of the present invention includes a
First, referring to FIG. 1, an
The
The source-
The
Referring to FIG. 7, a source-
Next, referring to FIG. 2, the
The
The
However, the
Next, referring to FIG. 3, a voltage is applied to both ends of the source-
When a voltage is applied to both ends of the source-
When current flows through the
At this time, a larger amount of current flows through the metallic carbon nanotubes 20 (b) having a smaller internal resistance than the semiconducting carbon nanotubes 20 (a) with respect to the same source-
As such, when a predetermined voltage is applied to the source-
When the
Referring to FIG. 8, it can be seen that only the
Next, referring to FIG. 4, heat treatment is applied to a semiconductor device in which the metallic carbon nanotubes 20 (b) are exposed to the outside.
When the heat treatment is performed on the semiconductor device, only the metallic carbon nanotubes 20 (b) exposed to the outside may be selectively removed.
The heat treatment can be, for example, an oxygen plasma treatment process.
At this time, the oxygen plasma treatment process should be performed before the
For this purpose, when the resistance value or the current value is monitored in real time between the source and
According to yet another method, a database of current values or resistance values according to the oxygen plasma treatment time may be used. In other words, the resistance value or the current value is measured before and after each plasma treatment and stored in a database. Therefore, the database stores information on how much the original resistance value or current value is lowered according to the oxygen plasma treatment time. Using this database, fine control is possible by adjusting only the oxygen plasma treatment time.
Next, referring to FIG. 5, the
If the heat treatment process is performed until the
The
Referring to FIG. 9, after all of the applied
Next, referring to FIG. 6, the
For example, the
The
Alternatively, the
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention as defined by the following claims It can be understood that
10: insulator substrate
20: channel layer
30: source-drain electrode
40: photosensitive material
50: gate insulating layer
60: gate electrode
Claims (6)
Applying a predetermined voltage to the source-drain electrode to remove the photosensitive material coated on the metallic carbon nanotubes in the channel layer;
And removing the metallic carbon nanotubes by performing heat treatment on the semiconductor device for a predetermined time.
Removing the photosensitive material,
And applying a predetermined voltage to the source-drain electrode such that the temperature of the metallic carbon nanotubes is 200 to 300 degrees.
The heat treatment is an oxygen plasma (Oxygen Plasma) treatment process carbon nanotube semiconductor device manufacturing method.
Removing the metallic carbon nanotubes,
A method of manufacturing a carbon nanotube semiconductor device, which is performed until semiconductor carbon nanotubes in the insulator substrate or the channel layer are exposed to the outside.
Carbon nanotube semiconductor device manufacturing method further comprising the step of removing the photosensitive material.
Forming a gate insulating layer on the source-drain electrode; and
Forming a gate electrode on the gate insulating layer further comprising a carbon nanotube semiconductor device manufacturing method.
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KR1020130002440A KR101339953B1 (en) | 2013-01-09 | 2013-01-09 | Method for producing carbon nanotube semiconductor device |
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KR1020130002440A KR101339953B1 (en) | 2013-01-09 | 2013-01-09 | Method for producing carbon nanotube semiconductor device |
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Citations (1)
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KR100847467B1 (en) | 2003-10-17 | 2008-07-21 | 인텔 코포레이션 | Method of sorting carbon nanotubes |
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KR100847467B1 (en) | 2003-10-17 | 2008-07-21 | 인텔 코포레이션 | Method of sorting carbon nanotubes |
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