CN102867717B - 防着板支承部件及具有该防着板支承部件的离子源 - Google Patents
防着板支承部件及具有该防着板支承部件的离子源 Download PDFInfo
- Publication number
- CN102867717B CN102867717B CN201210057513.7A CN201210057513A CN102867717B CN 102867717 B CN102867717 B CN 102867717B CN 201210057513 A CN201210057513 A CN 201210057513A CN 102867717 B CN102867717 B CN 102867717B
- Authority
- CN
- China
- Prior art keywords
- plasma
- container
- support unit
- plate support
- prevent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 19
- 230000005855 radiation Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 17
- 238000000605 extraction Methods 0.000 description 6
- 238000009434 installation Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000963 austenitic stainless steel Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
- H01J27/14—Other arc discharge ion sources using an applied magnetic field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32559—Protection means, e.g. coatings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Combustion & Propulsion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma Technology (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011-151326 | 2011-07-08 | ||
JP2011151326A JP2013020737A (ja) | 2011-07-08 | 2011-07-08 | 防着板支持部材およびこれを備えたイオン源 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102867717A CN102867717A (zh) | 2013-01-09 |
CN102867717B true CN102867717B (zh) | 2015-04-08 |
Family
ID=47446508
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210057513.7A Expired - Fee Related CN102867717B (zh) | 2011-07-08 | 2012-03-06 | 防着板支承部件及具有该防着板支承部件的离子源 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2013020737A (ko) |
KR (1) | KR101384571B1 (ko) |
CN (1) | CN102867717B (ko) |
TW (1) | TW201303950A (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6307825B2 (ja) * | 2013-09-25 | 2018-04-11 | 日新イオン機器株式会社 | 防着板支持部材、プラズマ源およびイオンビーム照射装置 |
CN206768212U (zh) * | 2017-06-08 | 2017-12-19 | 合肥鑫晟光电科技有限公司 | 成膜设备 |
JP6642612B2 (ja) * | 2018-04-12 | 2020-02-05 | 日新イオン機器株式会社 | イオン源、イオンビーム照射装置及びイオン源の運転方法 |
KR102458164B1 (ko) * | 2020-11-05 | 2022-10-24 | (주)제이피오토메이션 | 오염방지 방착판을 구비한 진공 증착 장치 |
CN114850003B (zh) * | 2021-02-03 | 2023-06-27 | 芝浦机械电子装置株式会社 | 加热处理装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62296332A (ja) * | 1986-06-16 | 1987-12-23 | Hitachi Ltd | イオン源 |
US5573596A (en) | 1994-01-28 | 1996-11-12 | Applied Materials, Inc. | Arc suppression in a plasma processing system |
JP4717186B2 (ja) * | 2000-07-25 | 2011-07-06 | 株式会社アルバック | スパッタリング装置 |
JP4703828B2 (ja) * | 2000-09-07 | 2011-06-15 | 株式会社アルバック | スパッタリング装置及び薄膜製造方法 |
KR20050009516A (ko) * | 2003-07-16 | 2005-01-25 | 매그나칩 반도체 유한회사 | 낮은 결합노이즈의 평판 커패시터 구조를 갖는 디램 셀을제조하는 방법 |
JP2010153095A (ja) * | 2008-12-24 | 2010-07-08 | Showa Shinku:Kk | イオンガン |
CN101930891B (zh) * | 2009-06-25 | 2012-08-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔室和内衬装置 |
-
2011
- 2011-07-08 JP JP2011151326A patent/JP2013020737A/ja not_active Withdrawn
-
2012
- 2012-03-06 CN CN201210057513.7A patent/CN102867717B/zh not_active Expired - Fee Related
- 2012-03-14 TW TW101108698A patent/TW201303950A/zh unknown
- 2012-03-27 KR KR1020120030938A patent/KR101384571B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
TW201303950A (zh) | 2013-01-16 |
JP2013020737A (ja) | 2013-01-31 |
CN102867717A (zh) | 2013-01-09 |
KR20130006273A (ko) | 2013-01-16 |
KR101384571B1 (ko) | 2014-04-11 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150408 Termination date: 20210306 |
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CF01 | Termination of patent right due to non-payment of annual fee |