CN102857174B - 一种低噪音全自动增益控制高电源抑制晶体振荡器 - Google Patents
一种低噪音全自动增益控制高电源抑制晶体振荡器 Download PDFInfo
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- CN102857174B CN102857174B CN201110176994.9A CN201110176994A CN102857174B CN 102857174 B CN102857174 B CN 102857174B CN 201110176994 A CN201110176994 A CN 201110176994A CN 102857174 B CN102857174 B CN 102857174B
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- pmos
- crystal oscillator
- bias current
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- 239000013078 crystal Substances 0.000 title claims abstract description 42
- 230000010355 oscillation Effects 0.000 claims abstract description 5
- 230000001629 suppression Effects 0.000 claims description 6
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- Oscillators With Electromechanical Resonators (AREA)
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CN201110176994.9A CN102857174B (zh) | 2011-06-28 | 2011-06-28 | 一种低噪音全自动增益控制高电源抑制晶体振荡器 |
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CN201110176994.9A CN102857174B (zh) | 2011-06-28 | 2011-06-28 | 一种低噪音全自动增益控制高电源抑制晶体振荡器 |
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CN102857174A CN102857174A (zh) | 2013-01-02 |
CN102857174B true CN102857174B (zh) | 2014-12-31 |
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CN201110176994.9A Expired - Fee Related CN102857174B (zh) | 2011-06-28 | 2011-06-28 | 一种低噪音全自动增益控制高电源抑制晶体振荡器 |
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CN110912399B (zh) * | 2019-12-11 | 2021-09-07 | 国网山东省电力公司济南供电公司 | 一种温度传感器时域供电系统 |
CN113783530B (zh) * | 2021-09-15 | 2022-03-01 | 合肥市汤诚集成电路设计有限公司 | 一种石英晶体振荡器电路 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US5909152A (en) * | 1997-02-28 | 1999-06-01 | Texas Instruments Incorporated | Low power CMOS crystal oscillator circuit |
US7292114B2 (en) * | 2005-08-01 | 2007-11-06 | Marvell World Trade Ltd. | Low-noise high-stability crystal oscillator |
CN101552592B (zh) * | 2008-09-27 | 2011-07-20 | 美芯集成电路(深圳)有限公司 | Cmos电流自动控制晶体振荡器 |
CN102006057B (zh) * | 2009-09-01 | 2013-05-08 | 杭州中科微电子有限公司 | 可编程调整起振条件的低功耗、快速起振晶体振荡器模块 |
CN101789758A (zh) * | 2010-01-22 | 2010-07-28 | 苏州锐调科技有限公司 | 低相噪全pmos考比兹晶体振荡器放大器电路 |
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Effective date of registration: 20190401 Address after: 528000 No. 8 of 903 R&D workshops in 12 R&D workshops of Lihe Science and Technology Industry Center, 99 Taoyuan East Road, Shishan Town, Nanhai District, Foshan City, Guangdong Province Patentee after: Foshan Benchuang Microelectronics Co., Ltd. Address before: 215163 Microsystem Park M4-202, No. 2 Peiyuan Road, Suzhou High-tech Zone, Jiangsu Province Patentee before: Suzhou Megana Microelectronics Co., Ltd. |
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Effective date of registration: 20210127 Address after: 215000 unit 4-b403, creative industry park, 328 Xinghu street, Suzhou Industrial Park, Jiangsu Province Patentee after: SUZHOU BENRAN MICROELECTRONICS Co.,Ltd. Address before: 528000 No. 8 of 903 R&D workshops in 12 R&D workshops of Lihe Science and Technology Industry Center, 99 Taoyuan East Road, Shishan Town, Nanhai District, Foshan City, Guangdong Province Patentee before: Foshan Benchuang Microelectronics Co.,Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
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Granted publication date: 20141231 Termination date: 20210628 |