CN102856289B - First etched and then packaged packaging structure with single chip reversedly installed and base islands exposed and preparation method of structure - Google Patents
First etched and then packaged packaging structure with single chip reversedly installed and base islands exposed and preparation method of structure Download PDFInfo
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- CN102856289B CN102856289B CN201210140791.9A CN201210140791A CN102856289B CN 102856289 B CN102856289 B CN 102856289B CN 201210140791 A CN201210140791 A CN 201210140791A CN 102856289 B CN102856289 B CN 102856289B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
Abstract
The invention relates to a first etched and then packaged packaging structure with a single chip reversedly installed and base islands exposed and a preparation method of the structure. The structure comprises base islands (1), pins (2) and a chip (3), wherein the chip (3) is reversedly installed on the front faces of the base islands (1) and the pins (2); underfills (14) are arranged among the bottom of the chip (3), the fronts of the base islands (1) and the pins (2); plastic package materials (4) are arranged in the peripheral regions of the base islands (1), the regions between the base islands (1) and the pins (2) and the regions between the pins (2) and outside the chip (3); small holes (5) are formed on the surfaces of the plastic package materials (4) on the lower parts of the base islands (1) and the pins (2); and metal balls (7) are arranged in the small holes (5). The packaging structure and the preparation method have the following beneficial effects that the preparation cost is reduced; the safety and reliability of the packaging body are improved; environmental pollution is reduced; and design and preparation of high-density circuits are truly achieved.
Description
Technical field
The present invention relates to encapsulate base island exposed encapsulating structure and manufacture method thereof after the first etching of a kind of single-chip upside-down mounting, belong to semiconductor packaging field.
Background technology
The manufacturing process flow of traditional high-density base board encapsulating structure is as follows:
Step 1, referring to Figure 28, get the substrate that a glass fiber material is made,
Step 2, referring to Figure 29, perforate on desired position on glass fibre basal plate,
Step 3, referring to Figure 30, at the back side of glass fibre basal plate coating one deck Copper Foil,
Step 4, referring to Figure 31, in the position of glass fibre basal plate punching, insert conductive materials,
Step 5, referring to Figure 32, at positive coating one deck Copper Foil of glass fibre basal plate,
Step 6, referring to Figure 33, at glass fibre basal plate covering surface photoresistance film,
Step 7, referring to Figure 34, photoresistance film is carried out to exposure imaging in the position of needs and windows,
Step 8, referring to Figure 35, by completing the part of windowing, carry out etching,
Step 9, referring to Figure 36, the photoresistance film of substrate surface is divested,
Step 10, referring to Figure 37, on the surface of copper foil circuit layer, carry out the coating of anti-welding paint (being commonly called as green paint),
Step 11, referring to Figure 38, after anti-welding paint need to carry out, window in the load of operation and the region of routing bonding,
Step 12, referring to Figure 39, electroplate in the region of windowing in step 11, relatively forms Ji Dao and pin,
Step 13, complete follow-up load, routing, seal, the concerned process steps such as cutting.
Above-mentioned traditional high-density base board encapsulating structure has the following disadvantages and defect:
1, many glass fiber materials of one deck, same also many costs of layer of glass;
2, because must use glass fibre, so with regard to many thickness space of layer of glass thickness approximately 100 ~ 150 μ m;
3, glass fibre itself is exactly a kind of foaming substance, so easily because the time of placing and environment suck moisture and moisture, directly have influence on the security capabilities of reliability or the grade of reliability;
4, fiberglass surfacing coating the Copper Foil metal layer thickness of one deck approximately 50 ~ 100 μ m, and the etched gap that the etching of metal level circuit and circuit distance also can only be accomplished 50 ~ 100 μ m because of the characteristic of etching factor is (referring to Figure 40, best making ability is the thickness that etched gap is approximately equal to etched object), so the design of accomplishing high-density line and manufacture that cannot be real;
5, because must use Copper Foil metal level, and Copper Foil metal level is the mode that adopts high pressure stickup, so the thickness of Copper Foil is difficult to the thickness lower than 50 μ m, otherwise is just difficult to operation as out-of-flatness or Copper Foil breakage or Copper Foil extension displacement etc.;
6, also because whole baseplate material is to adopt glass fiber material, thus significantly increased thickness 100 ~ 150 μ m of glass layer, cannot be real accomplish ultra-thin encapsulation;
7, the technology that traditional glass fiber is sticked on Copper Foil, because material property difference very large (coefficient of expansion) easily causes stress deformation in the operation of adverse circumstances, directly has influence on precision and element and substrate adherence and reliability that element loads.
Summary of the invention
The object of the invention is to overcome above-mentioned deficiency, after being provided, the first etching of a kind of single-chip upside-down mounting encapsulates base island exposed encapsulating structure and manufacture method thereof, its technique is simple, do not need to use glass layer, reduce manufacturing cost, improved the safety and reliability of packaging body, reduced the environmental pollution that glass fiber material brings, and metal substrate line layer adopts is electro-plating method, can really accomplish the Design and manufacture of high-density line.
The object of the present invention is achieved like this: after the first etching of a kind of single-chip upside-down mounting, encapsulate base island exposed encapsulating structure, it comprises Ji Dao, pin and chip, described flip-chip Yu Ji island and pin are positive, between described chip bottom Yu Ji island and pin front, be provided with underfill, the region of periphery, described base island, region between Ji Dao and pin, region between pin and pin, the region on Ji Dao and pin top, the region of Ji Dao and pin bottom and chip are all encapsulated with plastic packaging material outward, on the plastic packaging material surface of described Ji Dao and pin bottom, offer aperture, described aperture Yu Ji island or the pin back side are connected, in described aperture, be provided with Metal Ball, described Metal Ball Yu Ji island or the pin back side contact.
A manufacture method that encapsulates base island exposed encapsulating structure after the first etching of single-chip upside-down mounting, it comprises following processing step:
Step 1, get metal substrate
Step 2, metallic substrate surfaces preplating copper material
In metallic substrate surfaces, electroplate one deck copper material film,
Step 3, the operation of subsides photoresistance film
Utilize subsides photoresistance film device to carry out the coating of photoresistance film at the metal substrate front and the back side that complete preplating copper material film,
Part photoresistance film is removed at step 4, the metal substrate back side
Carry out graph exposure, develop and window in the metal substrate back side that utilizes exposure imaging equipment to complete pad pasting operation in step 3, the graphics field of electroplating to expose the follow-up needs in the metal substrate back side,
Step 5, plating inert metal line layer
The metal substrate back side has been completed to the graphics field of windowing and has electroplated upper inert metal line layer,
Step 6, electroplates high-conductive metal layer
On inert metal line layer surface, carry out the plating of high-conductive metal layer,
Step 7, removes metallic substrate surfaces photoresistance film
The photoresistance film of metallic substrate surfaces is removed,
Step 8, seal in advance
At the metal substrate back side, carry out sealing in advance of plastic packaging material,
Step 9, plastic packaging material surface perforate
In step 8, complete the plastic packaging material surface of sealing in advance and carry out the follow-up perforate operation that will plant Metal Ball region,
Step 10, the operation of subsides photoresistance film
In metal substrate front and back side coating photoresistance film,
Step 11, the positive part photoresistance film of removing of metal substrate
Carry out graph exposure, develop and window in the metal substrate front that utilizes exposure imaging equipment to complete the operation of subsides photoresistance film in step 10, to expose the positive follow-up graphics field that need to carry out chemical etching of metal substrate,
Step 12, chemical etching
Step 11 metal substrate front is completed to the graphics field of windowing and carries out chemical etching,
Step 13, electroplated metal layer
The plating of the enterprising row metal layer of inert metal line layer exposing after step 12 completes chemical etching, forms Ji Dao and pin at metal substrate vis-a-vis,
Step 14, removal metallic substrate surfaces photoresistance film
The photoresistance film of metallic substrate surfaces is removed,
Step 15, load and chip bottom are filled
In step 13, relatively form chip and chip bottom filling epoxy resin in Ji island and the positive upside-down mounting of pin,
Step 10 six, seal
In the metal substrate front completing after flip-chip and chip bottom are filled, carry out sealing of plastic packaging material,
Step 10 seven, cleaning
Metal substrate back side plastic packaging material tapping is cleaned,
Step 10 eight, plant ball
In step 10 seven, through the aperture cleaning, be implanted into Metal Ball,
Step 10 nine, cutting finished product
Step 10 eight is completed to the semi-finished product of planting ball and carry out cutting operation, make more than cuttings of plastic-sealed body module of originally integrating in array aggregate mode and containing chip independent, encapsulate base island exposed encapsulating structure finished product after making the etching of single-chip upside-down mounting elder generation.
Seven pairs of metal substrate back side plastic packaging material tappings of described step 10 clean and carry out coat of metal coating simultaneously.
Cross-over connection passive device between described pin and pin, described passive device is connected across between pin front and pin front or is connected across between the pin back side and the pin back side.
Described pin has multi-turn.
Described Ji Dao has a plurality of.
Described Ji Dao comprises Ji Dao top, Ji Dao bottom and intermediate barrier layers, and bottom, He Ji island, described Ji Dao top forms by single or multiple lift metal plating, and described intermediate barrier layers is nickel dam, titanium layer or copper layer.
Described pin comprises pin top, pin bottom and intermediate barrier layers, and described pin top and pin bottom form by single or multiple lift metal plating, and described intermediate barrier layers is nickel dam, titanium layer or copper layer.
Compared with prior art, the invention has the beneficial effects as follows:
1, the present invention does not need to use glass layer, so can reduce the cost that glass layer brings;
2, the present invention does not use the foaming substance of glass layer, so the grade of reliability can improve again, relatively to the fail safe of packaging body, will improve;
3, the present invention does not need to use glass layer material, so just can reduce the environmental pollution that glass fiber material brings;
What 4, two-dimensional metallic substrate circuit layer of the present invention adopted is electro-plating method, and the gross thickness of electrodeposited coating is about 10 ~ 15 μ m, and gap between circuit and circuit can reach the gap below 25 μ m easily, so can accomplish veritably the technical capability of pin circuit tiling in high density;
5, two-dimensional metallic substrate of the present invention is metal level galvanoplastic because of what adopt, so the technique than glass fibre high pressure Copper Foil metal level is come simply, and do not have metal level because high pressure produces bad or puzzled that metal level out-of-flatness, metal level breakage and metal level extend and be shifted;
6, two-dimensional metallic substrate circuit layer of the present invention is to carry out metal plating on the surface of metal base, so material characteristic is basic identical, so the internal stress of coating circuit and metal base is basic identical, can carries out easily the rear engineering (as the surface mount work of high temperature eutectic load, high temperature tin material scolder load and high temperature passive device) of adverse circumstances and be not easy to produce stress deformation.
Accompanying drawing explanation
Fig. 1 ~ Figure 19 encapsulates each operation schematic diagram of base island exposed encapsulating structure embodiment 1 manufacture method after the first etching of single-chip upside-down mounting of the present invention.
Figure 20 (A) encapsulates the structural representation of base island exposed encapsulating structure embodiment 1 after the first etching of single-chip upside-down mounting of the present invention.
Figure 20 (B) is the vertical view of Figure 20 (A).
Figure 21 (A) encapsulates the structural representation of base island exposed encapsulating structure embodiment 2 after the first etching of single-chip upside-down mounting of the present invention.
Figure 21 (B) is the vertical view of Figure 21 (A).
Figure 22 (A) encapsulates the structural representation of base island exposed encapsulating structure embodiment 3 after the first etching of single-chip upside-down mounting of the present invention.
Figure 22 (B) is the vertical view of Figure 22 (A).
Figure 23 (A) encapsulates the structural representation of base island exposed encapsulating structure embodiment 4 after the first etching of single-chip upside-down mounting of the present invention.
Figure 23 (B) is the vertical view of Figure 23 (A).
Figure 24 (A) encapsulates the structural representation of base island exposed encapsulating structure embodiment 5 after the first etching of single-chip upside-down mounting of the present invention.
Figure 24 (B) is the vertical view of Figure 24 (A).
Figure 25 (A) encapsulates the structural representation of base island exposed encapsulating structure embodiment 6 after the first etching of single-chip upside-down mounting of the present invention.
Figure 25 (B) is the vertical view of Figure 25 (A).
Figure 26 (A) encapsulates the structural representation of base island exposed encapsulating structure embodiment 7 after the first etching of single-chip upside-down mounting of the present invention.
Figure 26 (B) is the vertical view of Figure 26 (A).
Figure 27 (A) encapsulates the structural representation of base island exposed encapsulating structure embodiment 8 after the first etching of single-chip upside-down mounting of the present invention.
Figure 27 (B) is the vertical view of Figure 27 (A).
Figure 28 ~ Figure 39 is each operation schematic diagram of the manufacturing process flow of traditional high-density base board encapsulating structure.
Figure 40 is the etching situation schematic diagram of fiberglass surfacing Copper Foil metal level.
Wherein:
Base island 1
Pin 2
Chip 3
Plastic packaging material 4
Aperture 5
Coat of metal 6
Metal Ball 7
Passive device 8
Metal substrate 9
Copper material film 10
Photoresistance film 11
Inert metal line layer 12
High-conductive metal layer 13
Underfill 14.
Embodiment
After the first etching of single-chip upside-down mounting of the present invention, encapsulate base island exposed encapsulating structure and manufacture method as follows:
Embodiment 1: Dan Ji island individual pen pin
Referring to Figure 20 (A) and Figure 20 (B), after the first etching of Figure 20 (A) single-chip upside-down mounting of the present invention, encapsulate the structural representation of base island exposed encapsulating structure embodiment 1.Figure 20 (B) is the vertical view of Figure 20 (A).By Figure 20 (A) and Figure 20 (B), can be found out, after the first etching of single-chip upside-down mounting of the present invention, encapsulate base island exposed encapsulating structure, it comprises base island 1, pin 2 and chip 3, described chip 3 upside-down mounting Yu Ji islands 1 and pin 2 fronts, between described chip 3 Yu Ji islands 1, bottom and pin 2 fronts, be provided with underfill 14, the region of 1 periphery, described base island, region between base island 1 and pin 2, region between pin 2 and pin 2, the region on base island 1 and pin 2 tops, the outer plastic packaging material 4 that is all encapsulated with of the region of base island 1 and pin 2 bottoms and chip 3, on plastic packaging material 4 surfaces of described base island 1 and pin 2 bottoms, offer aperture 5, described aperture 5 Yu Ji islands 1 or pin 2 back sides are connected, in described aperture 5, be provided with Metal Ball 7, described Metal Ball 7 Yu Ji islands 1 or pin 2 back sides contact.
Between described Metal Ball 7 Yu Ji islands 1 or pin 2 back sides, be provided with coat of metal 6, described coat of metal 6 is antioxidant.
Described Metal Ball 7 materials adopt tin or ashbury metal.
Described base island 1 comprises Ji Dao top, Ji Dao bottom and intermediate barrier layers, and bottom, He Ji island, described Ji Dao top forms by single or multiple lift metal plating, and described intermediate barrier layers is nickel dam, titanium layer or copper layer.
Described pin 2 comprises pin top, pin bottom and intermediate barrier layers, and described pin top and pin bottom form by single or multiple lift metal plating, and described intermediate barrier layers is nickel dam, titanium layer or copper layer.
Its manufacture method is as follows:
Step 1, get metal substrate
Referring to Fig. 1, get the metal substrate that a slice thickness is suitable, the material of described metal substrate can convert according to function and the characteristic of chip, such as: copper material, iron material, ferronickel material or zinc-iron material etc.;
Step 2, metallic substrate surfaces preplating copper material
Referring to Fig. 2, in metallic substrate surfaces, electroplate one deck copper material film, object is to do basis for follow-up plating, the mode of described plating can adopt chemical plating or metallide;
Step 3, the operation of subsides photoresistance film
Referring to Fig. 3, utilize subsides photoresistance film device to carry out the coating of photoresistance film at the metal substrate front and the back side that complete preplating copper material film, described photoresistance film can adopt wet type photoresistance film or dry type photoresistance film;
Part photoresistance film is removed at step 4, the metal substrate back side
Referring to Fig. 4, carry out graph exposure, develop and window in the metal substrate back side that utilizes exposure imaging equipment to complete pad pasting operation in step 3, the graphics field of electroplating to expose the follow-up needs in the metal substrate back side;
Step 5, plating inert metal line layer
Referring to Fig. 5, the metal substrate back side has been completed to the graphics field of windowing and electroplated upper inert metal line layer, as the barrier layer of subsequent etch operation, described inert metal wiring material layer adopts nickel, titanium or copper etc., and described plating mode adopts chemical plating or metallide mode;
Step 6, electroplates high-conductive metal layer
Referring to Fig. 6, on inert metal line layer surface, carry out the plating of high-conductive metal layer, described high-conductive metal layer can be single or multiple lift, the material of described high-conductive metal layer adopts golden nickel, copper nickel gold, copper NiPdAu, porpezite or copper material, and described plating mode adopts chemical plating or metallide mode;
Step 7, removes metallic substrate surfaces photoresistance film
Referring to Fig. 7, the photoresistance film of metallic substrate surfaces to be removed, removal method adopts chemical medicinal liquid soften and adopt high pressure water jets to remove;
Step 8, seal in advance
Referring to Fig. 8, at the metal substrate back side, carry out sealing in advance of plastic packaging material, the mode that plastic packaging material is sealed in advance adopts mould encapsulating mode, spraying equipment spraying method or pad pasting mode, and the described plastic packaging material of sealing in advance can adopt packing material or without the epoxy resin of packing material;
Step 9, plastic packaging material surface perforate
Referring to Fig. 9, in step 8, complete the plastic packaging material surface of sealing in advance and carry out the follow-up perforate operation that will plant Metal Ball region, described perforate mode can adopt dry laser sintering to window or the method for wet chemistry corrosion;
Step 10, the operation of subsides photoresistance film
Referring to Figure 10, in metal substrate front and back side coating photoresistance film, described photoresistance film can adopt wet type photoresistance film or dry type photoresistance film;
Step 11, the positive part photoresistance film of removing of metal substrate
Referring to Figure 11, carry out graph exposure, develop and window in the metal substrate front that utilizes exposure imaging equipment to complete the operation of subsides photoresistance film in step 10, to expose the positive follow-up graphics field that need to carry out chemical etching of metal substrate;
Step 12, chemical etching
Referring to Figure 12, step 11 metal substrate front is completed to the graphics field of windowing and carry out chemical etching, chemical etching is to inert metal line layer and till sealing in advance the position of plastic packaging material, and etching solution can adopt copper chloride or iron chloride;
Step 13, electroplated metal layer
Referring to Figure 13, the plating of the enterprising row metal layer of inert metal line layer exposing after step 12 completes chemical etching, at metal substrate vis-a-vis, form Ji Dao and pin, described metal level can adopt single or multiple lift, described metal layer material adopts copper nickel gold, copper nickeline, porpezite, gold or copper etc., and described plating mode adopts chemical plating or metallide mode;
Step 14, removal metallic substrate surfaces photoresistance film
Referring to Figure 14, the photoresistance film of metallic substrate surfaces to be removed, removal method adopts chemical medicinal liquid soften and adopt high pressure water jets to remove;
Step 15, load and chip bottom are filled
Referring to Figure 15, in step 13, relatively form chip and chip bottom filling epoxy resin in Ji island and the positive upside-down mounting of pin;
Step 10 six, seal
Referring to Figure 16, after completing flip-chip and the chip bottom metal substrate front of filling carry out sealing of plastic packaging material, the mode that plastic packaging material is sealed adopts spraying method or the brush coating mode of mould encapsulating mode, spraying equipment, described in the plastic packaging material sealed can adopt packing material or without the epoxy resin of packing material;
Step 10 seven, cleaning
Referring to Figure 17, metal substrate back side plastic packaging material tapping is cleaned to remove oxidation material or grease material etc., can carry out the coating of coat of metal simultaneously, described coat of metal adopts antioxidant;
Step 10 eight, plant ball
Referring to Figure 18, in step 10 seven, through the aperture cleaning, be implanted into Metal Ball, the back side of Metal Ball Yu Ji island or pin contacts, plant ball mode and can adopt conventional ball attachment machine or adopt metal paste printing after high-temperature digestion, can form orbicule again, Metal Ball material can adopt tin or ashbury metal;
Step 10 nine, cutting finished product
Referring to Figure 19, step 10 eight is completed to the semi-finished product of planting ball and carry out cutting operation, make more than cuttings of plastic-sealed body module of originally integrating in array aggregate mode and containing chip independent, encapsulate base island exposed encapsulating structure finished product after making the etching of single-chip upside-down mounting elder generation.
Embodiment 2: Dan Ji island individual pen pin passive device
Referring to Figure 21 (A) and Figure 21 (B), after the first etching of Figure 21 (A) single-chip upside-down mounting of the present invention, encapsulate the structural representation of base island exposed encapsulating structure embodiment 2.Figure 21 (B) is the vertical view of Figure 21 (A).By Figure 21 (A) and Figure 21 (B), can be found out, the difference of embodiment 2 and embodiment 1 is only: between described pin 2 and pin 2, pass through conduction bonding material cross-over connection passive device 8, described passive device 8 can be connected across between pin 2 fronts and pin 2 fronts, also can be connected across between pin 2 back sides and pin 2 back sides.
Embodiment 3: Dan Ji island multi-circle pin
Referring to Figure 22 (A) and Figure 22 (B), after the first etching of Figure 22 (A) single-chip upside-down mounting of the present invention, encapsulate the structural representation of base island exposed encapsulating structure embodiment 3.Figure 22 (B) is the vertical view of Figure 22 (A).By Figure 22 (A) and Figure 22 (B), can be found out, embodiment 3 is only with the difference of embodiment 1: described pin 2 has multi-turn.
Embodiment 4: Dan Ji island multi-circle pin passive device
Referring to Figure 23 (A) and Figure 23 (B), after the first etching of Figure 23 (A) single-chip upside-down mounting of the present invention, encapsulate the structural representation of base island exposed encapsulating structure embodiment 4.Figure 23 (B) is the vertical view of Figure 23 (A).By Figure 23 (A) and Figure 23 (B), can be found out, embodiment 4 is only with the difference of embodiment 2: described pin 2 has multi-turn.
Embodiment 5: Duo Ji island individual pen pin
Referring to Figure 24 (A) and Figure 24 (B), after the first etching of Figure 24 (A) single-chip upside-down mounting of the present invention, encapsulate the structural representation of base island exposed encapsulating structure embodiment 5.Figure 24 (B) is the vertical view of Figure 24 (A).By Figure 24 (A) and Figure 24 (B), can be found out, embodiment 5 is only with the difference of embodiment 1: described base island 1 has a plurality of.
Embodiment 6: Duo Ji island individual pen pin passive device
Referring to Figure 25 (A) and Figure 25 (B), after the first etching of Figure 25 (A) single-chip upside-down mounting of the present invention, encapsulate the structural representation of base island exposed encapsulating structure embodiment 6.Figure 25 (B) is the vertical view of Figure 25 (A).By Figure 25 (A) and Figure 25 (B), can be found out, embodiment 6 is only with the difference of embodiment 2: described base island 1 has a plurality of.
Embodiment 7: Duo Ji island multi-circle pin
Referring to Figure 26 (A) and Figure 26 (B), after the first etching of Figure 26 (A) single-chip upside-down mounting of the present invention, encapsulate the structural representation of base island exposed encapsulating structure embodiment 7.Figure 26 (B) is the vertical view of Figure 26 (A).By Figure 26 (A) and Figure 26 (B), can be found out, embodiment 7 is only with the difference of embodiment 3: described base island 1 has a plurality of.
Embodiment 8: Duo Ji island multi-circle pin passive device
Referring to Figure 27 (A) and Figure 27 (B), after the first etching of Figure 27 (A) single-chip upside-down mounting of the present invention, encapsulate the structural representation of base island exposed encapsulating structure embodiment 8.Figure 27 (B) is the vertical view of Figure 27 (A).By Figure 27 (A) and Figure 27 (B), can be found out, embodiment 8 is only with the difference of embodiment 4: described base island 1 has a plurality of.
Claims (5)
1. after the first etching of single-chip upside-down mounting, encapsulate a manufacture method for base island exposed encapsulating structure, it is characterized in that described method comprises following processing step:
Step 1, get metal substrate
Step 2, metallic substrate surfaces preplating copper material
In metallic substrate surfaces, electroplate one deck copper material film,
Step 3, the operation of subsides photoresistance film
Utilize subsides photoresistance film device to carry out the coating of photoresistance film at the metal substrate front and the back side that complete preplating copper material film,
Part photoresistance film is removed at step 4, the metal substrate back side
Carry out graph exposure, develop and window in the metal substrate back side that utilizes exposure imaging equipment to complete pad pasting operation in step 3, the graphics field of electroplating to expose the follow-up needs in the metal substrate back side,
Step 5, plating inert metal line layer
The metal substrate back side has been completed to the graphics field of windowing and has electroplated upper inert metal line layer,
Step 6, electroplates high-conductive metal layer
On inert metal line layer surface, carry out the plating of high-conductive metal layer,
Step 7, removes metallic substrate surfaces photoresistance film
The photoresistance film of metallic substrate surfaces is removed,
Step 8, seal in advance
At the metal substrate back side, carry out sealing in advance of plastic packaging material,
Step 9, plastic packaging material surface perforate
In step 8, complete the plastic packaging material surface of sealing in advance and carry out the follow-up perforate operation that will plant Metal Ball region,
Step 10, the operation of subsides photoresistance film
In metal substrate front and back side coating photoresistance film,
Step 11, the positive part photoresistance film of removing of metal substrate
Carry out graph exposure, develop and window in the metal substrate front that utilizes exposure imaging equipment to complete the operation of subsides photoresistance film in step 10, to expose the positive follow-up graphics field that need to carry out chemical etching of metal substrate,
Step 12, chemical etching
Step 11 metal substrate front is completed to the graphics field of windowing and carries out chemical etching,
Step 13, electroplated metal layer
The plating of the enterprising row metal layer of inert metal line layer exposing after step 12 completes chemical etching, forms Ji Dao and pin at metal substrate vis-a-vis,
Step 14, removal metallic substrate surfaces photoresistance film
The photoresistance film of metallic substrate surfaces is removed,
Step 15, load and chip bottom are filled
In step 13, relatively form chip and chip bottom filling epoxy resin in Ji island and the positive upside-down mounting of pin,
Step 10 six, seal
In the metal substrate front completing after flip-chip and chip bottom are filled, carry out sealing of plastic packaging material,
Step 10 seven, cleaning
Metal substrate back side plastic packaging material tapping is cleaned,
Step 10 eight, plant ball
In step 10 seven, through the aperture cleaning, be implanted into Metal Ball,
Step 10 nine, cutting finished product
Step 10 eight is completed to the semi-finished product of planting ball and carry out cutting operation, make more than cuttings of plastic-sealed body module of originally integrating in array aggregate mode and containing chip independent, encapsulate base island exposed encapsulating structure finished product after making the etching of single-chip upside-down mounting elder generation.
2. after the first etching of a kind of single-chip upside-down mounting according to claim 1, encapsulate the manufacture method of base island exposed encapsulating structure, it is characterized in that: cross-over connection passive device (8) between described pin (2) and pin (2), described passive device (8) is connected across between pin (2) front and pin (2) front or is connected across between pin (2) back side and pin (2) back side.
3. after the first etching of a kind of single-chip upside-down mounting according to claim 1 and 2, encapsulate the manufacture method of base island exposed encapsulating structure, it is characterized in that: described pin (2) has multi-turn.
4. after the first etching of a kind of single-chip upside-down mounting according to claim 1, encapsulate the manufacture method of base island exposed encapsulating structure, it is characterized in that: seven pairs of metal substrate back side plastic packaging material tappings of described step 10 clean and carry out coat of metal coating simultaneously.
5. after the first etching of a kind of single-chip upside-down mounting according to claim 1, encapsulate the manufacture method of base island exposed encapsulating structure, it is characterized in that: described Ji Dao (1) has a plurality of.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210140791.9A CN102856289B (en) | 2012-05-09 | 2012-05-09 | First etched and then packaged packaging structure with single chip reversedly installed and base islands exposed and preparation method of structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210140791.9A CN102856289B (en) | 2012-05-09 | 2012-05-09 | First etched and then packaged packaging structure with single chip reversedly installed and base islands exposed and preparation method of structure |
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| Publication Number | Publication Date |
|---|---|
| CN102856289A CN102856289A (en) | 2013-01-02 |
| CN102856289B true CN102856289B (en) | 2014-10-29 |
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| CN201210140791.9A Active CN102856289B (en) | 2012-05-09 | 2012-05-09 | First etched and then packaged packaging structure with single chip reversedly installed and base islands exposed and preparation method of structure |
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| CN201681868U (en) * | 2010-04-26 | 2010-12-22 | 江苏长电科技股份有限公司 | Chip inversion encapsulating structure |
| CN102376672A (en) * | 2011-11-30 | 2012-03-14 | 江苏长电科技股份有限公司 | Foundation island-free ball grid array packaging structure and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN201681868U (en) * | 2010-04-26 | 2010-12-22 | 江苏长电科技股份有限公司 | Chip inversion encapsulating structure |
| CN102376672A (en) * | 2011-11-30 | 2012-03-14 | 江苏长电科技股份有限公司 | Foundation island-free ball grid array packaging structure and manufacturing method thereof |
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