CN102856170B - Transfer method for manufacturing self-aligning metal pattern of intensive step-type apparatus by resin layer - Google Patents
Transfer method for manufacturing self-aligning metal pattern of intensive step-type apparatus by resin layer Download PDFInfo
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- CN102856170B CN102856170B CN201210302115.7A CN201210302115A CN102856170B CN 102856170 B CN102856170 B CN 102856170B CN 201210302115 A CN201210302115 A CN 201210302115A CN 102856170 B CN102856170 B CN 102856170B
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Abstract
The invention provides a transfer method for manufacturing a self-aligning metal pattern of an intensive step-type apparatus by a resin layer. The transfer method comprises the following steps of 1, manufacturing an intensive step structure; 2, washing semiconductor material which passes through partial process by acid solution; 3, forming a layer of metal membrane on the semiconductor material; 4, coating an adhesive and a resin layer on the semiconductor material; 5, heating and curing the resin layer; 6, processing the resin layer on the semiconductor material to expose the metal layer on the upper surface of the step and the side wall of the partial step; 7, removing the metal membrane exposed by the upper surface of the step and the partial step side wall of the semiconductor material; and 8, removing the resin layer. The method provided by the invention has the advantages as follows: the problem that the metal layer of the step bottom and the side wall of the partial step cannot be covered well by common lithography is solved; the exposure and removing of the metal layer of the upper surface of the step and the side wall of the partial step are ensured through the self-aligning way; and the complete coverage of the metal layer at the bottom area of the slot of the intensive step structure is ensured.
Description
Technical field
What the present invention relates to is a kind of transfer method of autoregistration metallic pattern, and what be specifically related to is that a kind of resin bed that adopts is for the manufacture of the transfer method of the autoregistration metallic pattern of intensive stepped ramp type device.
Background technology
Semiconductor material with wide forbidden band carborundum (SiC) has the characteristics such as broad stopband width, high critical field strength, high heat conductance, high carrier saturation rate.SiC extension on SiC substrate is to manufacture high temperature, high frequency, the most important semi-conducting material of device such as high-power, has superpower performance and wide application prospect.In SiC microwave and power electronic device, intensive step is the conventional structures such as state induction transistor, junction field effect transistor, so how to make the good grid metal of coverage rate in the step bottom of micron order live width, is to realize the high performance key method of device.
In SiC element manufacturing, the common method that realizes the good covering of autoregistration step metal is: adopt multi-step process on the sidewall of step, to form silicon dioxide (SiO
2) covering protection, nextly on step by dry etching, remove SiO
2, and then adopt large area evaporation Ni metal level, form the Ni metal that step is upper and lower and sidewall is all evaporated and cover, uses 700 ℃ more than short annealings cause reacting of Ni metal and SiC, and Ni metal and SiO
2do not react, then adopt special-purpose corrosive liquid to remove Ni metal on responseless sidewall and for the protection of the SiO of step sidewall
2, form the upper and lower intact covering of metal of step.But this technique causes the unicity of metal selection and cannot only do the problem of metal under step; and Ni metal also causes the sex change of Ni metal to remove with reacting of SiC; can only continue technique as metal ohmic contact, in addition, in order to remove sidewall Ni metal and protection SiO
2layer, need to process through wet etching, and this can cause Ni metal surface situation variation, and the effect of carrying out in the back short annealing formation ohmic contact there will be obvious hydraulic performance decline problem.Therefore in order to improve ohmic contact effect and surface appearance, the Ni metal before short annealing is not wish to carry out wet treatment.A kind of resin bed that adopts passes through to adopt the resin beds such as BCB for the manufacture of the transfer method of the autoregistration metallic pattern of intensive stepped ramp type device; utilize the upper and lower thickness difference of step and dry etching speed difference; while having guaranteed that step upper surface and partial sidewall are exposed, step lower surface and partial sidewall are still under the protection in resin bed; then carry out wet etching metal level, guaranteed good covering and the surface appearance of lower surface metal.
Summary of the invention
The present invention proposes be a kind of resin bed that adopts for the manufacture of the transfer method of the autoregistration metallic pattern of intensive stepped ramp type device, its objective is the problem of making the grid metal that coverage rate is good in the step bottom of micron order live width that solves.
Technical solution of the present invention: the method comprises following processing step:
One, to semi-conducting material carry out photoetching, evaporated metal mask layer, peel off, dry etching or wet method remove mask layer (prior art) technique, form intensive ledge structure, the semi-conducting material of selecting is silicon carbide wafer, or the epitaxial wafer of the one deck of growing in silicon carbide substrates or multilayer carborundum films;
Two, to semi-conducting material, use acid solution to clean, hydrochloric acid and pure water for described acid solution, the weight proportion of its hydrochloric acid and pure water is 1:5-20;
Three, deposit layer of metal on semiconductor material surface, metal is nickel (Ni), titanium (Ti), aluminium (Al) or platinum (Pt), metal thickness is 30nm～300nm, adopt the mode of electron beam evaporation to form, four, the layer of metal of deposit on semiconductor material surface, specifically by applying adhesive HMDS, adopt steam spraying process to apply benzocyclobutene or polyimide resin layer are attached to metal surface, resin layer thickness is at 1um～3um, and intensive stepped recesses is also covered and fills and leads up by resin bed;
Five, by the technique that is heating and curing of the resin bed on metal on semi-conducting material, heating-up temperature is since 25 ℃ (room temperatures), temperature-gradient method to 250 ℃, and more than 1 hour, be then cooled to room temperature curing time; Described segmentation refers to 70 ℃ of stable 20min, 140 ℃ of stable 40min;
Six, adopt dry etching method large-area treatment resin bed, expose the metal of step upper surface and partial sidewall;
Described resin bed is on metallic surface; Dry etching method is reactive plasma etching RIE or inductively coupled plasma etching ICP;
Seven, the metal that uses special-purpose acid solution removal semi-conducting material step upper surface and part step sidewall to expose;
Described special-purpose acid solution is: the weight proportion for nickel metal is HCL:HNO3=5～10:1; Weight proportion for titanium is H2O:HF=10～20:1; Weight proportion for aluminum metal is H3PO4:H2O=1:1; Weight proportion for platinum is HCL:HNO3=1～3:1;
Eight, adopt dry etching method to remove remaining resin bed, dry etching method is plasma etching PE or inductively coupled plasma etching ICP, the metallic pattern protection that step upper surface and part step sidewall expose is intact.
Beneficial effect of the present invention: a kind of resin bed that adopts passes through to adopt the resin beds such as BCB for the manufacture of the transfer method of the autoregistration metallic pattern of intensive stepped ramp type device, utilize the upper and lower thickness difference of step and dry etching speed difference, guaranteed the corrosion of step upper surface and partial sidewall metal level, the good covering and the surface appearance that have formed step lower surface metal, metal can carry out polytype selection.
Accompanying drawing explanation
Accompanying drawing 1 is the schematic diagram of intensive ledge structure.
Accompanying drawing 2 is local enlarged diagrams of intensive ledge structure.
Accompanying drawing 3 is that resin bed is attached to the schematic diagram of the metal surface on semi-conducting material by coated adhesive.
Accompanying drawing 4 is the metal schematic diagrames that expose step upper surface and partial sidewall.
Accompanying drawing 5 is the schematic diagrames after erosion removal step upper surface and partial sidewall metal.
Accompanying drawing 6 is schematic diagrames of removing after residual resin layer.
In figure 1 is semi-conducting material, the 2nd, metal, the 3rd, resin bed.
Embodiment
Embodiment 1:
One, semi-conducting material is carried out to photoetching or evaporated metal mask layer technique, form intensive ledge structure, semi-conducting material 1 is selected silicon carbide wafer;
Two, to semi-conducting material 1, use acid solution to clean, hydrochloric acid and pure water for described acid solution, the weight proportion of its hydrochloric acid and pure water is 1:5;
Three, deposit layer of metal 2 on semi-conducting material 1 surface, metal 2 is nickel (Ni), metal thickness is 30nmnm, adopts the mode of electron beam evaporation to form, as shown in Figure 2;
Four, the layer of metal 2 of deposit on semi-conducting material 1 surface, specifically by applying adhesive HMDS, employing steam spraying process applies, resin bed (benzocyclobutene) is attached to metal 2 surfaces, resin layer thickness 1um, intensive stepped recesses is also covered and fills and leads up by resin bed; As shown in Figure 3;
Five, by the resin bed on metal 2 on semi-conducting material 13 technique that is heating and curing, heating-up temperature is since 25 ℃ (room temperatures), temperature-gradient method to 250 ℃, and more than 1 hour, be then cooled to room temperature curing time; Described segmentation refers to 70 ℃ of stable 20min, 140 ℃ of stable 40min;
Six, adopt dry etching method large-area treatment resin bed 3, expose the metal 2 of step upper surface and partial sidewall, as shown in Figure 4;
Described resin bed 3 is on the surface of metal 2; Dry etching method is reactive plasma etching (RIE) or inductively coupled plasma etching (ICP);
Seven, the metal 2 that uses special-purpose acid solution removal semi-conducting material 1 step upper surface and part step sidewall to expose, as shown in Figure 5;
Described special-purpose acid solution is: the weight proportion for nickel metal is HCL:HNO3=5～10:1;
Eight, adopt dry etching method to remove remaining resin bed 3, dry etching method is plasma etching (PE), the metal 2 figure protections that step upper surface and part step sidewall expose are intact, as shown in Figure 6.
Embodiment 2:
One, semi-conducting material is peeled off or dry etch process, form intensive ledge structure, the epitaxial wafer that the semi-conducting material selected 1 is one deck carborundum films of growing in silicon carbide substrates;
Two, to semi-conducting material 1, use acid solution to clean, hydrochloric acid and pure water for described acid solution, the weight proportion of its hydrochloric acid and pure water is 1:20;
Three, deposit layer of metal 2 on semi-conducting material 1 surface, metal 2 is aluminium (Al) or platinum (Pt), metal thickness is 300nm, adopts the mode of electron beam evaporation to form, as shown in Figure 2;
Four, the layer of metal 2 of deposit on semi-conducting material 1 surface, specifically by applying adhesive HMDS, employing steam spraying process applies, resin (polyimides) layer 3 is attached to metal 2 surfaces, and resin layer thickness is at 3um, and intensive stepped recesses is also covered and fills and leads up by resin bed; As shown in Figure 3;
Five, by the resin bed on metal 2 on semi-conducting material 13 technique that is heating and curing, heating-up temperature is since 25 ℃ (room temperatures), temperature-gradient method to 250 ℃, and more than 1 hour, be then cooled to room temperature curing time; Described segmentation refers to 70 ℃ of stable 20min, 140 ℃ of stable 40min;
Six, adopt dry etching method large-area treatment resin bed 3, expose the metal 2 of step upper surface and partial sidewall, as shown in Figure 4;
Described resin bed 3 is on the surface of metal 2; Dry etching method is reactive plasma etching (RIE) or inductively coupled plasma etching (ICP);
Seven, the metal 2 that uses special-purpose acid solution removal semi-conducting material 1 step upper surface and part step sidewall to expose, as shown in Figure 5;
Described special-purpose acid solution is: the weight proportion for nickel metal is HCL:HNO3=5～10:1; Weight proportion for aluminum metal is H3PO4:H2O=1:1;
Eight, adopt dry etching method to remove remaining resin bed 3, dry etching method is inductively coupled plasma etching (ICP), the metal 2 figure protections that step upper surface and part step sidewall expose are intact, as shown in Figure 6.
Embodiment 3:
One, semi-conducting material is carried out to wet method and remove mask layer technique, form intensive ledge structure, the epitaxial wafer that the semi-conducting material 1 of selecting is the multilayer carborundum films of growing in silicon carbide substrates;
Two, to semi-conducting material 1, use acid solution to clean, hydrochloric acid and pure water for described acid solution, the weight proportion of its hydrochloric acid and pure water is 1:15;
Three, deposit layer of metal 2 on semi-conducting material 1 surface, metal 2 is platinum (Pt), metal thickness is 160nm, adopts the mode of electron beam evaporation to form, as shown in Figure 2;
Four, the layer of metal 2 of deposit on semi-conducting material 1 surface, is specifically attached to metal 2 surfaces by applying adhesive (HMDS adhesive adopts steam spraying process to apply) by resin (polyimides) layer 3, resin layer thickness is at 2um, and intensive stepped recesses is also covered and fills and leads up by resin bed; As shown in Figure 3;
Five, by the resin bed on metal 2 on semi-conducting material 13 technique that is heating and curing, heating-up temperature is since 25 ℃ (room temperatures), temperature-gradient method to 250 ℃, and more than 1 hour, be then cooled to room temperature curing time; Described segmentation refers to 70 ℃ of stable 20min, 140 ℃ of stable 40min;
Six, adopt dry etching method large-area treatment resin bed 3, expose the metal 2 of step upper surface and partial sidewall, as shown in Figure 4;
Described resin bed 3 is on the surface of metal 2; Dry etching method is reactive plasma etching (RIE);
Seven, the metal 2 that uses special-purpose acid solution removal semi-conducting material 1 step upper surface and part step sidewall to expose, as shown in Figure 5;
Described special-purpose acid solution is: the weight proportion for platinum is HCL:HNO3=1～3:1;
Eight, adopt dry etching method to remove remaining resin bed 3, dry etching method is plasma etching (PE), the metal 2 figure protections that step upper surface and part step sidewall expose are intact, as shown in Figure 6.
Claims (4)
1. adopt resin bed to manufacture a transfer method for the autoregistration metallic pattern of intensive stepped ramp type device, it is characterized in that, the method comprises the following steps:
One, to semi-conducting material carry out photoetching, evaporated metal mask layer, peel off, dry etching or wet method remove mask layer technique, form intensive ledge structure, the semi-conducting material of selecting is silicon carbide wafer, or the epitaxial wafer of the one deck of growing in silicon carbide substrates or multilayer carborundum films;
Two, to semi-conducting material, use acid solution to clean, hydrochloric acid and pure water for described acid solution, the weight proportion of its hydrochloric acid and pure water is 1:5-20;
Three, deposit layer of metal on semiconductor material surface, metal is nickel, titanium, aluminium or platinum, metal thickness is 30nm～300nm, adopts the mode of electron beam evaporation to form;
Four, by applying adhesive HMDS, adopt steam spraying process to apply the resin bed of benzocyclobutene or polyimides is attached to metal surface, resin layer thickness is at 1um～3um, and intensive stepped recesses is also covered and fills and leads up by resin bed;
Five, by the resin bed of the benzocyclobutene on metal on semi-conducting material or the polyimides technique that is heating and curing, heating-up temperature is since 25 ℃, temperature-gradient method to 250 ℃, and more than 1 hour, be then cooled to room temperature curing time;
Six, adopt the resin bed of dry etching method large-area treatment benzocyclobutene or polyimides, expose the metal of step upper surface and partial sidewall;
Seven, the metal that uses special-purpose acid solution removal semi-conducting material step upper surface and part step sidewall to expose;
Eight, adopt dry etching method to remove the resin bed of remaining benzocyclobutene or polyimides, dry etching method is plasma etching PE or inductively coupled plasma etching ICP, and the metallic pattern that step bottom and partial sidewall are exposed is intact.
2. a kind of transfer method that adopts resin bed to manufacture the autoregistration metallic pattern of intensive stepped ramp type device according to claim 1, is characterized in that the segmentation in processing step five refers to 70 ℃ of stable 20min, 140 ℃ of stable 40min.
3. a kind of transfer method that adopts resin bed to manufacture the autoregistration metallic pattern of intensive stepped ramp type device according to claim 1, is characterized in that benzocyclobutene in processing step six or the resin bed of polyimides are on metallic surface; Dry etching method is reactive plasma etching RIE or inductively coupled plasma etching ICP.
4. a kind of transfer method that adopts resin bed to manufacture the autoregistration metallic pattern of intensive stepped ramp type device according to claim 1, is characterized in that the special-purpose acid solution in processing step seven is: the weight proportion for nickel metal is HCL:HNO
3=5～10:1; Weight proportion for titanium is H
2o:HF=10～20:1; Weight proportion for aluminum metal is H
3pO
4: H
2o=1:1; Weight proportion for platinum is HCL:HNO
3=1～3:1.
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| CN101303525A (en) * | 2008-06-23 | 2008-11-12 | 上海集成电路研发中心有限公司 | Double-pattern exposure process |
| CN102543849A (en) * | 2011-10-21 | 2012-07-04 | 上海华力微电子有限公司 | Method for etching first metal layer |
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| KR100928509B1 (en) * | 2007-12-24 | 2009-11-26 | 주식회사 동부하이텍 | Semiconductor element and manufacturing method thereof |
| JP2013534367A (en) * | 2010-08-02 | 2013-09-02 | アトテツク・ドイチユラント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | Method for forming solder deposits and non-molten bumps on a substrate |
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| CN101303525A (en) * | 2008-06-23 | 2008-11-12 | 上海集成电路研发中心有限公司 | Double-pattern exposure process |
| CN102543849A (en) * | 2011-10-21 | 2012-07-04 | 上海华力微电子有限公司 | Method for etching first metal layer |
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