CN106206281B - The lithographic method of InGaP epitaxial layer - Google Patents
The lithographic method of InGaP epitaxial layer Download PDFInfo
- Publication number
- CN106206281B CN106206281B CN201610709116.1A CN201610709116A CN106206281B CN 106206281 B CN106206281 B CN 106206281B CN 201610709116 A CN201610709116 A CN 201610709116A CN 106206281 B CN106206281 B CN 106206281B
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- silica
- base film
- ingap
- layer
- epitaxial layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
Abstract
The present invention provides a kind of lithographic method of InGaP epitaxial layer, on substrate, lithographic method includes: to grow to form silica-base film layer on InGaP epitaxial layer using chemical vapor deposition process to InGaP outer layer growth；Photoresist is coated on silica-base film layer forms photoresist layer；Photoengraving pattern is etched on photoresist layer using photoetching process；Target pattern corresponding with photoengraving pattern is etched on the silica-base film layer in photoengraving pattern using reactive ion etching process；Using the InGaP epitaxial layer in the mix acid liquor of concentrated hydrochloric acid and phosphoric acid etching target pattern；Remove the remainder of photoresist layer.By the above-mentioned means, the present invention, which can effectively inhibit side, carves phenomenon.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of lithographic method of InGaP epitaxial layer.
Background technique
Currently, InGaP/GaAs HBT (heterojunction bipolar transistor) device has become the mainstream of GaAs system HBT device,
It works with single positive supply, power density is high, breakdown voltage is high, the wide change effect in base area and effective base region expansion effect are small etc.
Advantage.
Since GaAs system HBT device is vertical structure device, wet corrosion technique is the key that entire device work
Skill.Since InGaP chemical property is stablized, InGaP is generally etched using concentrated hydrochloric acid+phosphoric acid in IC industry, concentrated hydrochloric acid with
Phosphoric acid ratio is 1:8~10:1.
Since concentrated hydrochloric acid+phosphoric acid etch rate is too fast, generally existMore than.And in HBT device, InGaP is thick
Degree isAnd HBT device does not have the effect of growth interface, is easy to happen serious side and carves phenomenon, influences device
Performance, especially during making some InGaP chain-wales, serious side, which is carved, can lead to InGaP abolition of plateau, cause device
Production failure.
Summary of the invention
The invention mainly solves the technical problem of providing a kind of lithographic methods of InGaP epitaxial layer, can effectively press down
Carve phenomenon in side processed.
In order to solve the above technical problems, one technical scheme adopted by the invention is that: a kind of quarter of InGaP epitaxial layer is provided
Etching method, on substrate, the lithographic method includes: using chemical vapor deposition process in institute to the InGaP outer layer growth
It states growth on InGaP epitaxial layer and forms silica-base film layer；Photoresist is coated on the silica-base film layer forms photoresist layer；It adopts
Photoengraving pattern is etched on the photoresist layer with photoetching process；Using reactive ion etching process in the photoengraving pattern
Silica-base film layer on etch target pattern corresponding with the photoengraving pattern；Using the mix acid liquor of concentrated hydrochloric acid and phosphoric acid
Etch the InGaP epitaxial layer in the target pattern；Remove the remainder of the photoresist layer.
Preferably, the material of the substrate be GaAs, InP, Si or SiC, the InGaP epitaxial layer with a thickness of
Preferably, the material of the silica-base film layer is SiN, Si3N4Or SiO2。
Preferably, the growth temperature of the silica-base film layer is 200 DEG C~600 DEG C, with a thickness of
Preferably, after etching the silica-base film layer using reactive ion etching process, the residue of the silica-base film layer
Partial minimum dimension is 4 μm of 4 μ m.
Preferably, the etching mode of the silica-base film layer is overetch, and the ratio of overetch is 5% or more.
Preferably, concentrated hydrochloric acid and phosphoric acid ratio are 1:5~10:1.
It is in contrast to the prior art, the beneficial effects of the present invention are: thin by forming silicon substrate on InGaP epitaxial layer
Film layer protects InGaP epitaxial layer as hard exposure mask (Hard Mask), using the effect at the interface formed in growth course, thus
Side can be effectively inhibited and carve phenomenon, it is ensured that the smooth production of device.
Detailed description of the invention
Fig. 1 is the flow diagram of the lithographic method of InGaP epitaxial layer of the embodiment of the present invention.
Fig. 2 to Fig. 7 is the preparation flow figure using the lithographic method of InGaP of embodiment of the present invention epitaxial layer.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that the described embodiments are merely a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
It is the flow diagram of the lithographic method of InGaP epitaxial layer of the embodiment of the present invention referring to Fig. 1.Implement in the present invention
In example, InGaP outer layer growth is on substrate.The lithographic method the following steps are included:
S11: it is grown on InGaP epitaxial layer using chemical vapor deposition process and forms silica-base film layer.
Wherein, as shown in Fig. 2, InGaP epitaxial layer 20 is grown on substrate 10, silica-base film layer 30 is formed in outside InGaP
Prolong on layer 20.In the present embodiment, the material of substrate 10 be GaAs, InP, Si or SiC, InGaP epitaxial layer 20 with a thickness ofThe material of silica-base film layer 30 is SiN, Si3N4Or SiO2.The growth temperature of silica-base film layer 30 is 200 DEG C
~600 DEG C, with a thickness of
S12: photoresist is coated on silica-base film layer and forms photoresist layer.
Wherein, as shown in figure 3, photoresist layer 40 is formed on silica-base film layer 30.
S13: photoengraving pattern is etched on photoresist layer using photoetching process.
Wherein, as shown in figure 4, after etching using photoetching process, photoengraving pattern 41 is formed on photoresist layer 40.
S14: it is etched and photoengraving pattern phase on silica-base film layer in photoengraving pattern using reactive ion etching process
Corresponding target pattern.
Wherein, as shown in figure 5, after etching using reactive ion etching process, target pattern is formed on silica-base film layer 30
31.The place that silica-base film layer 30 is etched dimensionally is slightly less than the place that photoresist layer 40 is etched.In the present embodiment,
After etching silica-base film layer 30 using reactive ion etching process, the minimum dimension of the remainder of silica-base film layer 30 is 4 μm
×4μm.And the etching mode of silica-base film layer 30 is overetch, and the ratio of overetch is 5% or more.
S15: using the InGaP epitaxial layer in the mix acid liquor of concentrated hydrochloric acid and phosphoric acid etching target pattern.
Wherein, as shown in fig. 6, after being etched using mix acid liquor, the InGaP epitaxial layer do not protected by silica-base film layer 30
20 are etched, and are not affected by the InGaP epitaxial layer 20 that silica-base film layer 30 is protected, side carve phenomenon there is no.
S16: the remainder of photoresist layer is removed.
Wherein, as shown in fig. 7, after removal photoresist layer 40, the InGaP epitaxial layer 20 after being etched.And silicon substrate is thin
The remainder of film layer 30 can be chosen to remove or retain according to actual process demand.
The above description is only an embodiment of the present invention, is not intended to limit the scope of the invention, all to utilize this hair
Equivalent structure or equivalent flow shift made by bright specification and accompanying drawing content is applied directly or indirectly in other relevant skills
Art field, is included within the scope of the present invention.
Claims (7)
1. a kind of lithographic method of InGaP epitaxial layer, the InGaP outer layer growth is on substrate, which is characterized in that described
Lithographic method includes:
It is grown on the InGaP epitaxial layer using chemical vapor deposition process and forms silica-base film layer；
Photoresist is coated on the silica-base film layer forms photoresist layer；
Photoengraving pattern is etched on the photoresist layer using photoetching process；
It is etched on the silica-base film layer in the photoengraving pattern and the photoengraving pattern phase using reactive ion etching process
Corresponding target pattern；
The InGaP epitaxial layer in the target pattern is etched using the mix acid liquor of concentrated hydrochloric acid and phosphoric acid；
Remove the remainder of the photoresist layer；And the remainder of silica-base film layer is chosen to remove according to actual process demand
Or retain.
2. the lithographic method of the InGaP epitaxial layer according to claim 1, which is characterized in that the material of the substrate is
GaAs, InP, Si or SiC, the InGaP epitaxial layer with a thickness of 100 ~ 1 μm.
3. the lithographic method of the InGaP epitaxial layer according to claim 1, which is characterized in that the silica-base film layer
Material is SiN, Si3N4Or SiO2。
4. the lithographic method of InGaP epitaxial layer according to claim 3, which is characterized in that the silica-base film layer
Growth temperature is 200 DEG C ~ 600 DEG C, with a thickness of 200 ~ 1 μm.
5. the lithographic method of InGaP epitaxial layer according to claim 3, which is characterized in that use reactive ion etching
After technique etches the silica-base film layer, the minimum dimension of the remainder of the silica-base film layer is 4 μm of 4 μ m.
6. the lithographic method of InGaP epitaxial layer according to claim 3, which is characterized in that the silica-base film layer
Etching mode is overetch, and the ratio of overetch is 5% or more.
7. the lithographic method of the InGaP epitaxial layer according to claim 1, which is characterized in that concentrated hydrochloric acid and phosphoric acid ratio
For 1:5 ~ 10:1.
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| CN201610709116.1A CN106206281B (en) | 2016-08-23 | 2016-08-23 | The lithographic method of InGaP epitaxial layer |
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| CN106486355B (en) * | 2016-12-20 | 2019-03-01 | 成都海威华芯科技有限公司 | A kind of wet etching method of InGaP |
| CN107910363B (en) * | 2017-11-22 | 2020-01-14 | 成都海威华芯科技有限公司 | Method for etching base of heterojunction bipolar transistor by using single-layer photomask |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4354898A (en) * | 1981-06-24 | 1982-10-19 | Bell Telephone Laboratories, Incorporated | Method of preferentially etching optically flat mirror facets in InGaAsP/InP heterostructures |
| CN103236471A (en) * | 2013-04-28 | 2013-08-07 | 扬州乾照光电有限公司 | Wet-method chemical preparation method of Ce substrate for patterned solar cell |
| CN103346092A (en) * | 2013-07-22 | 2013-10-09 | 中国科学院半导体研究所 | Preparation method for gate-all-round MOSFET of silicon substrate high mobility InGaAs channel |
-
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- 2016-08-23 CN CN201610709116.1A patent/CN106206281B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4354898A (en) * | 1981-06-24 | 1982-10-19 | Bell Telephone Laboratories, Incorporated | Method of preferentially etching optically flat mirror facets in InGaAsP/InP heterostructures |
| CN103236471A (en) * | 2013-04-28 | 2013-08-07 | 扬州乾照光电有限公司 | Wet-method chemical preparation method of Ce substrate for patterned solar cell |
| CN103346092A (en) * | 2013-07-22 | 2013-10-09 | 中国科学院半导体研究所 | Preparation method for gate-all-round MOSFET of silicon substrate high mobility InGaAs channel |
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