CN102854740A - 灰色调掩模的检查装置及制造方法、图案转印方法 - Google Patents

灰色调掩模的检查装置及制造方法、图案转印方法 Download PDF

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Publication number
CN102854740A
CN102854740A CN2012103234365A CN201210323436A CN102854740A CN 102854740 A CN102854740 A CN 102854740A CN 2012103234365 A CN2012103234365 A CN 2012103234365A CN 201210323436 A CN201210323436 A CN 201210323436A CN 102854740 A CN102854740 A CN 102854740A
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CN
China
Prior art keywords
light
gray mask
exposure
mask
gray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2012103234365A
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English (en)
Chinese (zh)
Inventor
吉田光一郎
平野照雅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of CN102854740A publication Critical patent/CN102854740A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Sustainable Development (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optics & Photonics (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN2012103234365A 2006-12-05 2007-12-05 灰色调掩模的检查装置及制造方法、图案转印方法 Pending CN102854740A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006-327868 2006-12-05
JP2006327868 2006-12-05

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN200710196456XA Division CN101201537B (zh) 2006-12-05 2007-12-05 灰色调掩模的检查装置及制造方法、图案转印方法

Publications (1)

Publication Number Publication Date
CN102854740A true CN102854740A (zh) 2013-01-02

Family

ID=39516769

Family Applications (2)

Application Number Title Priority Date Filing Date
CN200710196456XA Active CN101201537B (zh) 2006-12-05 2007-12-05 灰色调掩模的检查装置及制造方法、图案转印方法
CN2012103234365A Pending CN102854740A (zh) 2006-12-05 2007-12-05 灰色调掩模的检查装置及制造方法、图案转印方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN200710196456XA Active CN101201537B (zh) 2006-12-05 2007-12-05 灰色调掩模的检查装置及制造方法、图案转印方法

Country Status (4)

Country Link
JP (1) JP5097520B2 (ko)
KR (1) KR101374976B1 (ko)
CN (2) CN101201537B (ko)
TW (1) TWI422962B (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108362711A (zh) * 2017-01-26 2018-08-03 信越化学工业株式会社 光掩模坯的缺陷检查方法、分选方法及其制造方法
CN109307980A (zh) * 2017-07-27 2019-02-05 Hoya株式会社 光掩模检查方法、光掩模制造方法及光掩模检查装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5185154B2 (ja) * 2009-02-20 2013-04-17 Ｈｏｙａ株式会社 多階調フォトマスクの検査方法
JP5185158B2 (ja) * 2009-02-26 2013-04-17 Ｈｏｙａ株式会社 多階調フォトマスクの評価方法
JP2010276724A (ja) * 2009-05-26 2010-12-09 Hoya Corp 多階調フォトマスク、多階調フォトマスクの製造方法、及びパターン転写方法
US8735044B2 (en) 2009-05-28 2014-05-27 Sumitomo Chemical Company, Limited Salt and photoresist composition containing the same
EP3304166B1 (en) * 2015-06-02 2019-06-26 Life Technologies Corporation Systems and methods for calibrating a structured illumination imaging system and for capturing a structured illumination image
JP7229138B2 (ja) * 2019-09-27 2023-02-27 Hoya株式会社 パターン検査方法、フォトマスクの検査装置、フォトマスクの製造方法、および表示装置の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04328548A (ja) * 1991-04-26 1992-11-17 Nikon Corp フォトマスクの検査方法および装置
JP2530081B2 (ja) * 1992-01-09 1996-09-04 株式会社東芝 マスク検査装置
JP3249203B2 (ja) * 1992-11-13 2002-01-21 株式会社日立製作所 ホトマスクの製造方法
JPH08137092A (ja) * 1994-11-09 1996-05-31 Fujitsu Ltd マスクの検査方法及びマスクの検査装置
JP3998790B2 (ja) * 1998-01-16 2007-10-31 大日本印刷株式会社 マスク準備装置
JPH11237344A (ja) * 1998-02-19 1999-08-31 Hitachi Ltd 欠陥検査方法およびその装置
US6466315B1 (en) * 1999-09-03 2002-10-15 Applied Materials, Inc. Method and system for reticle inspection by photolithography simulation
JP3556591B2 (ja) * 2000-09-29 2004-08-18 Ｈｏｙａ株式会社 グレートーンマスクにおけるグレートーン部の欠陥修正方法
JP4518704B2 (ja) * 2001-06-28 2010-08-04 ライトロン株式会社 位相シフトマスク検査装置及び位相シフトマスク検査方法
AUPS334802A0 (en) * 2002-07-03 2002-07-25 Common Component Pty Ltd E commerce system and method
JP2004240523A (ja) * 2003-02-04 2004-08-26 Toshiba Corp パターン観察装置およびマスク検査装置
JP3875648B2 (ja) * 2003-04-08 2007-01-31 Ｈｏｙａ株式会社 グレートーンマスクの欠陥検査方法
JP2006105926A (ja) * 2004-10-08 2006-04-20 Nikon Corp 検査装置
JP2007240519A (ja) * 2006-02-08 2007-09-20 Tokyo Electron Ltd 欠陥検査方法、欠陥検査装置及びコンピュータプログラム

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108362711A (zh) * 2017-01-26 2018-08-03 信越化学工业株式会社 光掩模坯的缺陷检查方法、分选方法及其制造方法
CN108362711B (zh) * 2017-01-26 2022-07-15 信越化学工业株式会社 光掩模坯的缺陷检查方法、分选方法及其制造方法
CN109307980A (zh) * 2017-07-27 2019-02-05 Hoya株式会社 光掩模检查方法、光掩模制造方法及光掩模检查装置

Also Published As

Publication number Publication date
JP5097520B2 (ja) 2012-12-12
CN101201537B (zh) 2012-09-12
TW200848920A (en) 2008-12-16
CN101201537A (zh) 2008-06-18
KR20080052445A (ko) 2008-06-11
TWI422962B (zh) 2014-01-11
KR101374976B1 (ko) 2014-03-14
JP2008165216A (ja) 2008-07-17

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Application publication date: 20130102