CN102842851A - 带有集成的镜和波导的垂直腔面发射激光器 - Google Patents

带有集成的镜和波导的垂直腔面发射激光器 Download PDF

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CN102842851A
CN102842851A CN2012102063260A CN201210206326A CN102842851A CN 102842851 A CN102842851 A CN 102842851A CN 2012102063260 A CN2012102063260 A CN 2012102063260A CN 201210206326 A CN201210206326 A CN 201210206326A CN 102842851 A CN102842851 A CN 102842851A
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S·E·欧尔森
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Seagate Technology LLC
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Abstract

公开一种带有集成的镜和波导的垂直腔面发射激光器。公开一种装置包括扩展腔垂直腔面发射激光器、靠近扩展腔垂直腔面发射激光器设置的平面波导以及被构造成将来自扩展腔垂直腔面发射激光器的光的第二部分耦合到波导的横向耦合器，该扩展腔垂直腔面发射激光器产生光，并且具有有源区、靠近有源区的第一侧设置的第一反射器、靠近有源区的第二侧设置的扩展腔以及将光的第一部分反射到扩展腔并透射光的第二部分的第二反射器。

Description

带有集成的镜和波导的垂直腔面发射激光器
背景技术
热辅助磁记录（HAMR）通常是指这样的概念：局部加热记录介质以减少介质的矫顽性，以使得在由热源引起的介质临时磁软化期间所施加的磁写入场可以更容易地引导介质的磁化。可以使用严格受限的高功率激光光斑来加热记录介质的一部分，以实质上减小加热部分的矫顽性。然后，加热部分经受设置加热部分的磁化方向的磁场。以此方式，环境温度下介质的矫顽性可以远高于在记录期间的矫顽性，由此以高得多的存储密度和小得多的位单元实现所记录位的稳定性。
使用平面固态浸没镜（PSIM）、或在平面波导上制造的透镜、以及靠近PSIM焦点放置、采用隔离金属纳米结构形式的近场换能器（NFT），可以将光引导到记录介质上。近场换能器被设计为以指定的光波长实现局部表面等离子激元（LSP）条件。在LSP，由于金属中电子的集体振荡，出现环绕近场换能器的高场。该场的部分将透入邻近的介质并被吸收，这在局部提高了介质温度以便用于记录。
HAMR头中需要高水平的光辐射，以便提供磁介质的快速加热。
发明内容
在一个方面中，本公开内容提供一种装置，包括扩展腔垂直腔面发射激光器、靠近扩展腔垂直腔面发射激光器设置的平面波导以及被构造成将来自扩展腔垂直腔面发射激光器的光的第二部分耦合到波导的横向耦合器，该扩展腔垂直腔面发射激光器产生光，并且具有有源性、靠近有源区的第一侧设置的第一反射器、靠近有源区的第二侧设置的扩展腔以及将光的第一部分反射到扩展腔中并透射光的第二部分的第二反射器。
附图说明
图1是采用盘驱动器形式的可以包括根据本公开一个方面的记录头的数据存储设备的示意图。
图2是记录头的一部分的横截面图。
图3是可以被用于图2的记录头的波导的正视图。
图4是包括垂直腔面发射激光器的记录头的一部分的侧视图。
图5是包括垂直腔面发射激光器的另一记录头的一部分的侧视图。
图6是包括垂直腔面发射激光器的另一记录头的一部分的侧视图。
具体实施方式
图1是采用盘驱动器10的形式、可以利用根据本公开一个方面构建的记录头的数据存储设备的示意图。盘驱动器10包括其大小被调整且被配置为包含盘驱动器的多个组件的外壳12（在这个视图中上部分被移除，下部分可见）。盘驱动器10包括用于旋转外壳内至少一个磁记录介质16的主轴马达14。至少一个臂18被包含在外壳12内，且每个臂18具有带记录头或滑动器22的第一端20以及由轴承26枢轴地安装在轴上的第二端24。致动器马达28位于该臂的第二端24，用于旋转臂18以便将记录头22定位在盘16的所期望轨道27上。致动器马达28由控制器调节，控制器在这一视图中未示出，但在本领域中是公知的。
对于热辅助磁记录（HAMR），例如可见光、红外光或紫外光之类的电磁波被引导到数据存储介质的表面，以升高介质局部区域的温度，以便促进该区域的磁化转换。HAMR记录头的当前设计包括滑动器上的薄膜波导，以便将光引导到存储介质，用于存储介质的局部加热。如本领域中已知的，热辅助磁记录（heat assistedmagnetic recording）也被称为热学辅助磁记录（thermally assisted magneticrecording）。在本具体实施例中，热辅助磁记录包括其中在升高的温度下记录数据的设备和方法。
图2是用于热辅助磁记录的记录头的示例的横截面图。记录头30包括衬底32、衬底上的底涂层34、底涂层上的底磁极36和通过磁轭（yoke）或支架（pedestal）40磁耦合到底磁极的顶磁极38。波导42被设置在顶磁极和底磁极之间。波导包括芯层44和在芯层上的相对侧的包层46和48。镜50靠近包层之一设置。顶磁极是包括第一部分或磁极体52和第二部分或斜磁极件58的双件磁极，磁极体52具有与空气轴承表面56隔开的第一端54，斜磁极件58从第一部分延伸且在朝向底磁极的方向倾斜。第二部分被构造成包括靠近记录头的空气轴承表面56的端部，且该端部比顶磁极的第一部分更靠近波导。平面线圈60也在顶磁极和底磁极之间且绕支架延伸。近场换能器（NFT）62被设置在靠近空气轴承表面的包层46中。隔离材料64将线圈匝隔离开。另一隔离材料层66被设置为靠近顶磁极。
记录介质68被设置为靠近记录头30或在其之下。在这一示例中，记录介质68包括衬底70、衬底70上的软磁底层72和软底层72上的硬磁记录层74。
光波导与将电磁辐射发射到波导的电磁辐射源相关联地工作。出于本描述的目的，电磁辐射被称为光。光被诸如光栅之类的耦合装置耦合到光波导。光通过光波导向记录介质传播，以便加热记录层的局部区域。在本公开的一个方面中，光源是垂直腔面发射激光器二极管。尽管记录头可以是垂直磁记录头且存储介质可以是垂直磁记录介质，但应明白，本公开也可以与其中期望采用热辅助记录的其他类型记录头和/或记录介质结合使用。
图3是记录头82中的波导80的正视图。波导包括通常具有被成形为将光90反射到在空气轴承表面94处或附近的焦点92的抛物线边缘86和88的平面芯层84。光栅96和98被设置在芯层上，且被用来将光耦合到芯层中。光栅可以相对于彼此偏移，以使得波导两侧中的光的电分量在焦点处迭加。照射光栅的光被示出为光斑100。沿着芯层的边缘提供反射涂覆102，该涂层可以是金。这种安排形成固态浸没镜。返回磁极104被设置为靠近空气轴承表面。
在一个实施例中，光从与波导平面基本垂直的方向照射光栅。为了向空气轴承表面引导光，需要采用用于耦合法向入射的激光源的若干方法之一。例如，可以使用法向入射光栅耦合器，诸如成角度的闪耀光栅。
垂直腔面发射激光器（VCSEL）是一类半导体激光器，其中从设备的顶部或底部处的通常圆形开口发射光，而不是像边缘发射激光器那样在侧边发射光。VCSEL的几何形状减少制造了成本、增加了成品率并具有许多其他优点，包括线宽较窄、无散光、对反馈噪声的敏感度降低等等。在本公开的一个方面中，VCSEL被安装在记录头上。
垂直腔面发射激光器（VCSEL）提供了许多优点以便组装到HAMR系统中。已经提出了将能够传输HAMR所要求的功率的VCSEL组件（例如外腔VCSEL）用作HAMR的光源。由于它们的长度为约0.5mm到约1mm，难以将VCSEL合并到现有的HAMR滑动器设计中。为了生产高功率单模光，可以使用外腔VCSEL。
在一个方面中，本公开提供包括外腔VCSEL、波导和用于将来自VCSEL的光耦合到波导的耦合器的换能器组件。图4是滑动器120的一部分的侧视图，包括具有被安装在波导124上的扩展腔垂直腔面发射激光器二极管122的换能器组件。波导被安装在子支架（submount）或记录头126上。激光二极管包括有源部分128以及扩展腔部分130，有源部分128包括被用来产生光的VCSEL的已知有源元件。扩展腔部分包括透光间隙保持器（stand-off）132和第一镜134（也称为反射器）。第一镜134被设置为靠近波导124。有源部分被定位为接近与波导相对的VCSEL的端部。第二镜136（也称为反射器）被设置为在与面向扩展腔的一侧相对的一侧上靠近有源区。第二镜将光的第一部分反射到扩展腔并将光的透射到波导。
包括了光栅耦合器138，以便将来自激光器的光140耦合到波导。光栅耦合器充当横向耦合元件，且可以例如是闪耀光栅。电触点142和144由导电粘合剂或焊料150和152电连接到通孔（via）146和148。VCSEL的有源区电连接到通孔。在图4中的透明间隙保持器132和镜134之间的空间154可以是开放空间（空气或真空），或者是透光材料（例如，环氧树脂或硅树脂）。
代替使用分开的镜来为激光器结构创建外腔，将第二镜134集成到激光器的吸热架（heat sink mount）或子架，且充当输出耦合镜。透光间隙保持器被设置在VCSEL和子架之间，以便创建具有适当光功率输出的激光器所要求的腔长。输出耦合镜可以是沉积在子架表面上的电介质材料的层堆叠，形成高反射率镜。
波导将光传输到记录头的空气轴承表面，如箭头156所示。从空气轴承表面发射的光被用来加热视图中未示出的邻近记录介质的一部分。记录头可以包括已知记录头中出现的其他元件，例如用于在写磁极中产生磁场的线圈、读传感器和关联的部件。滑动器由万向节组件耦合到致动臂。当用于数据存储设备时，激光器腔的轴将由臂和万向节设置为与记录介质的表面基本平行。
镜可以由高折射率和低折射率电介质材料的单独层或交替层组成，这些电介质材料包括氟化镁、氧化铝、二氧化硅、非晶硅、硫化锌、二氧化钛、氧化钽、氟化铈、二氧化锆或其他材料。图4中的VCSEL包括外延生长的半导体，带有夹在一对分布式布拉格反射镜之间的有源光发射区以及向有源区提供电流的金属化电触点。在其上生长VCSEL外延层的衬底可以是透光的，如图4中所示出，或者VCSEL可以翻转以便被安装成外延侧面向子架。
横向光耦合器（例如，光栅耦合器138）被集成到子架中，允许发射到也被集成到子架中的波导中，如图4中所示出。在HAMR记录头的情况中，记录头本身充当激光子架，以使得外腔输出耦合镜、横向光耦合器和波导全部都被集成到记录头上。
到VCSEL的电连接可以通过将接线直接结合到VCSEL来实现，或者通过如图4中所示在间隙保持器中使用金属通孔来实现。热传导通过电连接、接线结合或金属通孔。
替代的实施例包括波导中的分布式布拉格反射器（DBR）镜，分布式布拉格反射器（DBR）镜通过在电介质波导芯中创建适当的光栅而被集成到记录头中。
图5是包括换能器组件的另一滑动器160的一部分的侧视图，该换能器组件包括图4中的许多元件，这些元件用相同的项目编号标识。然而，图5不包括间隙保持器下的镜。相反，分布式布拉格反射器（DBR）162被设置在波导124中。DBR将光的一部分164反射回耦合器138，耦合器138将光耦合回到激光器腔中。
布拉格反射器在波导中、在横向耦合器的磁盘侧上。它由被蚀刻到波导一部分中的规则图案组成，该部分填充有折射率与波导芯不同的电介质材料，形成被设计为以与箭头156相反的方向反射光的光栅。在这一示例中，横向耦合器将光耦合到波导中，且也将由布拉格反射器反射的光从波导耦合到激光二极管的有源区。
如果例如通过将透镜图案化到间隙保持器和子架之间的缝隙来将光束聚焦成小光斑，则也可以使用倾斜镜。图6是包括换能器组件的另一滑动器170的一部分的侧视图，该换能器组件包括图4中的许多元件，这些元件用相同的项目编号标识。图6的实施例包括透镜172，透镜172将光聚焦到倾斜镜174上，倾斜镜174充当用于将光耦合到波导124中的横向耦合器。在图6中，透镜靠近间隙保持器下方的镜134设置。然而，透镜也可以靠近间隙保持器的发射面（即，靠近间隙保持器的底部输出）设置。
VCSEL组件与横向耦合器的对准可以是无源的，例如，借助于VCSEL和间隙保持器上的子架上包括的自对准特征和止动器（stopper）。替代地，通过首先将间隙保持器结合到VCSEL上、然后在将该组件附加到子架的同时监视诸如来自波导的光输出之类的性能参数，可以实现有源对准。可以使用导电粘合剂，当性能参数已经最大化时，或者例如当达到期望的输出功率时，该导电粘合剂能够固化以固定对准。也可以测量许多其他参数以便确定最佳对准，例如，其中设备开始激振的阈值电流、从相对于子架的VCSEL表面发射的光功率、跨二极管的电压、来自光谱分析的中央波长峰的宽度和边模的抑制、以及从相对于子架的VCSEL表面发射的光束轮廓。
激光器被耦合到换能器组件，且光束直接耦合到波导而不需要外部光学配置。一旦光束被耦合到波导中，光通过波导向波导的截断端传播，截断端被形成为靠近记录头的空气轴承表面（ABS）。当介质相对于记录头运动时，光离开波导的端部并加热介质的一部分。近场换能器可以被设置在波导中或靠近波导，以便进一步将光集中在空气轴承表面附近，如图2中所示出。
在另一方面中，本公开包括数据存储设备，该数据存储设备包括以上所描述的换能器组件。数据存储设备包括存储介质、记录头和用于将记录头定位为靠近存储介质的臂，其中记录头包括换能器组件，该换能器组件包括平面波导和横向耦合器（该横向耦合器被构造成将电磁辐射耦合到波导中）以及扩展腔垂直腔面发射激光器，该扩展腔垂直腔面发射激光器具有有源区、靠近有源区的第一侧设置的第一镜、靠近有源区的第二侧设置的扩展腔以及设置在扩展腔的端部附近并靠近横向耦合器的第二镜。
应理解，即使在前述描述中已经阐释了本发明的各种实施例的众多特性和优点以及本发明的多个实施例的结构和功能的细节，但所描述的实施例仅是说明性的，且可以在用来表示所附权利要求的术语的宽泛、一般的含义所指示的完全范围内，在本发明的原理下，在细节上做出改变，尤其是与各部分的结构和安排有关的改变。例如，取决于特定的应用，可以在不偏离本发明的精神和范围的前提下改变特定元件。
以上所描述的实现和其他实现落在所附权利要求的范围中。

Claims (20)

1.一种装置，包括：
扩展腔垂直腔面发射激光器，用于产生光，并且具有有源区、靠近所述有源区的第一侧设置的第一反射器、靠近所述有源区的第二侧设置的扩展腔以及将所述光的第一部分反射到所述扩展腔并透射所述光的第二部分的第二反射器；
靠近所述扩展腔垂直腔面发射激光器设置的平面波导；以及
构造成将来自所述扩展腔垂直腔面发射激光器的光的第二部分耦合到所述波导中的横向耦合器。
2.如权利要求1所述的装置，其特征在于，所述横向耦合器包括成角度的闪耀光栅。
3.如权利要求1所述的装置，其特征在于，所述扩展腔包括透光间隙保持器。
4.如权利要求3所述的装置，其特征在于，所述扩展腔包括在所述透光间隙保持器和所述第二镜之间的缝隙。
5.如权利要求4所述的装置，其特征在于，所述缝隙填充有透光材料。
6.如权利要求1所述的装置，进一步包括：
所述扩展腔中将所述光聚焦到所述横向耦合元件上的透镜。
7.如权利要求6所述的装置，其特征在于，所述横向耦合元件包括倾斜镜。
8.如权利要求1所述的装置，其特征在于，使用可固化的导电粘合剂将所述扩展腔垂直腔面发射激光器安装在所述波导上，且在固化粘合剂之前所述扩展腔垂直腔面发射激光器与所述波导对准，以便使得性能参数最大化。
9.一种装置，包括：
扩展腔垂直腔面发射激光器，用于产生光，并且具有有源区、靠近所述有源区的第一侧设置的第一反射器、靠近所述有源区的第二侧设置的扩展腔；
平面波导；
构造成将所述光耦合到所述波导且从所述波导向所述有源区耦合的横向耦合器；以及
设置在所述波导中以便将所述光的第一部分向所述横向耦合器反射并透射所述光的第二部分的第二反射器。
10.如权利要求9所述的装置，其特征在于，所述第二反射器包括分布式布拉格反射器。
11.如权利要求9所述的装置，其特征在于，所述横向耦合器包括成角度的闪耀光栅。
12.如权利要求9所述的装置，其特征在于，所述扩展腔包括透光间隙保持器。
13.如权利要求12所述的装置，其特征在于，所述扩展腔包括在所述透光间隙保持器和所述第二镜之间的缝隙。
14.如权利要求13所述的装置，其特征在于，所述缝隙填充有透光材料。
15.如权利要求9所述的装置，还包括：
通过所述扩展腔中第一通孔和第二通孔电连接到所述有源区的第一电触点和第二电触点。
16.如权利要求9所述的装置，其特征在于，使用可固化的导电粘合剂将所述扩展腔垂直腔面发射激光器安装在所述波导上，且在固化所述粘合剂之前将所述扩展腔垂直腔面发射激光器与所述波导对准。
17.一种装置，包括：
存储介质；
记录头；以及
用于将所述记录头定位为靠近所述存储介质的臂；
其中，所述记录头包括换能器组件，所述换能器组件包括扩展腔垂直腔面发射激光器、平面波导、以及被构造成将所述光的所述第二部分耦合到所述波导的横向耦合器，所述扩展腔垂直腔面发射激光器产生光，并且具有有源区、靠近所述有源区的第一侧设置的第一反射器、靠近所述有源区的第二侧设置的扩展腔以及被设置为将所述光的第一部分反射到所述扩展腔并透射所述光的第二部分的第二反射器。
18.如权利要求17所述的装置，其特征在于，所述横向耦合器包括成角度的闪耀光栅。
19.如权利要求17所述的装置，其特征在于，所述第二镜包括多个层。
20.如权利要求17所述的装置，其特征在于，所述第二镜包括分布式布拉格反射器。
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