CN102842622A - Crystalline silicon solar battery based on embedding charge into passivation coating - Google Patents
Crystalline silicon solar battery based on embedding charge into passivation coating Download PDFInfo
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- CN102842622A CN102842622A CN2012101807396A CN201210180739A CN102842622A CN 102842622 A CN102842622 A CN 102842622A CN 2012101807396 A CN2012101807396 A CN 2012101807396A CN 201210180739 A CN201210180739 A CN 201210180739A CN 102842622 A CN102842622 A CN 102842622A
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Abstract
The invention provides a crystalline silicon solar battery based on embedding charge into a passivation coating and relates to the technical field of a semiconductor device. An optical floating gate is additionally arranged in the passivation coating of a traditional crystalline silicon battery structure and the charge is injected. An emission region of the crystalline silicon solar battery can be heavily doped and has greater open-circuit voltage VOC; the compounding of the emission region in a dead layer is reduced so that the service life of a photon-generated carrier is prolonged and the carrier collection capability of an emission electrode is enhanced; the width of a consumption region of a silicon PN junction is increased so that the region for generating the photon-generated carrier is increased, photon-generated current becomes large, namely greater short-circuit current ISC is formed; and the crystalline silicon solar battery has very good compatibility with a traditional crystalline silicon solar battery process.
Description
Technical field:
The present invention relates to technical field of semiconductor device, be specifically related to a kind of based on the crystal-silicon solar cell that embeds electric charge in the passivating film.
Background technology:
Referring to Fig. 1, in the manufacture process of crystal-silicon solar cell, emitter region and substrate constitute a PN junction, and this PN junction can be transformed into electric energy with incident optical energy.Referring to Fig. 2, P type crystal silicon solar battery emitter region is a N type silicon area, and substrate is a P type silicon area.Referring to Fig. 3, N type crystal silicon solar battery emitter region is a P type silicon area, and substrate is a N type silicon area.The emitter region has great influence to the characteristic of crystal silicon solar battery, emitter region heavy doping and caused the silicon crystal lattice mismatch and formed a large amount of traps at silicon surface region.These traps have complex effect, in this zone since light be absorbed institute produces the ground charge carrier can be because the life-span be too short before being diffused into emitter just by compound, thereby battery efficiency is not had to contribute so this special area be otherwise known as " dead layer ".Because the existence of " dead layer ", make the raising of efficient of crystal silicon solar battery receive very big influence.In order to address this problem, prior art has adopted two kinds of technology more.First kind of technology: reduce the doping of emitter region.This method can reduce the trap quantity in the silicon, thereby makes the life-span of photo-generated carrier increase.The doping content of emitter region reduces and has caused that open circuit voltage VOC reduces but the shortcoming of this method is.Second kind of technology: reduce the emitter junction junction depth.This method can effectively reduce the influence of " dead layer ", but but makes the battery series resistance increase, and power loss increases.
In sum, prior art is owing to be limited by traditional crystal silicon battery effect on structure, suppressing aspect " dead layer " all defectiveness, can not reach both to keep open circuit voltage simultaneously, can reduce the compound effect of photo-generated carrier again.
Summary of the invention:
The purpose of this invention is to provide a kind ofly based on the crystal-silicon solar cell that embeds electric charge in the passivating film, it can the heavy doping in the emitter region, has bigger open circuit voltage VOC; Reduce compound in the emitter region " dead layer ", increased the life-span of photo-generated carrier, strengthened the carrier collection ability of emitter; Increased the width of depletion region of silicon PN junction, thereby increased the zone of the generation of photo-generated carrier, made photogenerated current become big, promptly had bigger short circuit current ISC, and good compatibility is arranged with traditional crystal silicon solar battery technology.
In order to solve the existing problem of background technology, the present invention adopts following technical scheme: it increases the optics floating boom in to passivation layer and carries out electric charge and inject in traditional crystal silicon battery structure.
Basic principle of the present invention is to have utilized the electric field of the charge generation in the passivation layer to reduce the composite action of photo-generated carrier in " dead layer ", thereby has increased the capacity gauge of photo-generated carrier at the emitter place.
The present invention has following beneficial effect: it can the heavy doping in the emitter region, has bigger open circuit voltage VOC; Reduce compound in the emitter region " dead layer ", increased the life-span of photo-generated carrier, strengthened the carrier collection ability of emitter; Increased the width of depletion region of silicon PN junction, thereby increased the zone of the generation of photo-generated carrier, made photogenerated current become big, promptly had bigger short circuit current ISC, and good compatibility is arranged with traditional crystal silicon solar battery technology.
Description of drawings:
Fig. 1 is a crystal silicon solar battery structural representation traditional in the background technology,
Fig. 2 is a traditional P type crystal silicon solar battery structural representation in the background technology,
Fig. 3 is a N type crystal silicon solar battery structural representation traditional in the background technology,
Fig. 4 is a structural representation of the present invention,
Fig. 5 is P type crystalline silicon solar battery structure sketch map among the present invention,
Fig. 6 is N type crystalline silicon solar battery structure sketch map among the present invention.
Embodiment:
Referring to Fig. 4, this embodiment adopts following technical scheme: it increases the optics floating boom in to passivation layer and carries out electric charge and inject in traditional crystal silicon battery structure.
The basic principle of this embodiment is: utilized the electric field of the charge generation in the passivation layer to reduce the composite action of photo-generated carrier in " dead layer ", thereby increased the capacity gauge of photo-generated carrier at the emitter place.
The position of photoconductive property floating boom is between two emitters that connect silicon in the passivation layer in this embodiment.
Referring to Fig. 5-6, a certain amount of electric charge of storage in the optics floating boom, wherein N type crystal silicon solar battery is stored positive charge in the photoconductive floating boom; P type crystal silicon solar battery is stored negative electrical charge in the photoconductive floating boom.These electric charges act as the generation electric field, attract electronics or the hole in the P type battery in the N type battery to arrive emitter, reduce compound in " dead band ", and the zone that makes photo-generated carrier produce increases, increase photogenerated current.
Described optics floating boom has the shape that can change, and its volume is that V and this shape can require to regulate according to optics and electricity.Its distribution in passivation layer simultaneously also can be regulated according to the performance requirement of crystal silicon battery.
Charge stored amount Q in the described optics floating boom can regulate according to compound situation in " dead layer ", thereby obtains the ability that maximum reduction is compound and increase emitter collection charge carrier.
The physical size of described optics floating boom, distribution and charge stored amount also can be regulated simultaneously, to reach the effect of best raising battery efficiency.
This embodiment can the heavy doping in the emitter region, has bigger open circuit voltage VOC; Reduce compound in the emitter region " dead layer ", increased the life-span of photo-generated carrier, strengthened the carrier collection ability of emitter; Increased the width of depletion region of silicon PN junction, thereby increased the zone of the generation of photo-generated carrier, made photogenerated current become big, promptly had bigger short circuit current ISC, and good compatibility is arranged with traditional crystal silicon solar battery technology.
Claims (2)
1. one kind based on the crystal-silicon solar cell that embeds electric charge in the passivating film, it is characterized in that it increases the optics floating boom in to passivation layer and carries out electric charge and inject in traditional crystal silicon battery structure.
2. according to claim 1 a kind of based on the crystal-silicon solar cell that embeds electric charge in the passivating film; The basic principle that it is characterized in that it is to have utilized the electric field of the charge generation in the passivation layer to reduce the composite action of photo-generated carrier in " dead layer ", thereby has increased the capacity gauge of photo-generated carrier at the emitter place.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012101807396A CN102842622A (en) | 2012-06-04 | 2012-06-04 | Crystalline silicon solar battery based on embedding charge into passivation coating |
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| CN2012101807396A CN102842622A (en) | 2012-06-04 | 2012-06-04 | Crystalline silicon solar battery based on embedding charge into passivation coating |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101562207A (en) * | 2008-04-14 | 2009-10-21 | 黄麟 | Crystalline silicon solar battery |
| CN101960604A (en) * | 2008-03-13 | 2011-01-26 | S.O.I.Tec绝缘体上硅技术公司 | The substrate that live zone is arranged in the insulation buried layer |
| CN102074576A (en) * | 2009-10-30 | 2011-05-25 | 万国半导体股份有限公司 | Normally-off gallium nitride field effect transistor |
| CN102332485A (en) * | 2010-07-12 | 2012-01-25 | 石郧熙 | Technique for improving conversion efficiency of solar photovoltaic cell |
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2012
- 2012-06-04 CN CN2012101807396A patent/CN102842622A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101960604A (en) * | 2008-03-13 | 2011-01-26 | S.O.I.Tec绝缘体上硅技术公司 | The substrate that live zone is arranged in the insulation buried layer |
| CN101562207A (en) * | 2008-04-14 | 2009-10-21 | 黄麟 | Crystalline silicon solar battery |
| CN102074576A (en) * | 2009-10-30 | 2011-05-25 | 万国半导体股份有限公司 | Normally-off gallium nitride field effect transistor |
| CN102332485A (en) * | 2010-07-12 | 2012-01-25 | 石郧熙 | Technique for improving conversion efficiency of solar photovoltaic cell |
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Application publication date: 20121226 |