CN202145453U - N-type silicon solar battery - Google Patents
N-type silicon solar battery Download PDFInfo
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- CN202145453U CN202145453U CN 201120251151 CN201120251151U CN202145453U CN 202145453 U CN202145453 U CN 202145453U CN 201120251151 CN201120251151 CN 201120251151 CN 201120251151 U CN201120251151 U CN 201120251151U CN 202145453 U CN202145453 U CN 202145453U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model discloses an N-type silicon solar battery, comprising an N-type silicon chip substrate, wherein the right side of the silicon chip substrate is provided with a P-type emitter junction layer containing a porous silicon rough surface structure. The N-type silicon solar battery enables the average photoelectric conversion efficiency to be more than 20%, and has a remarkable effect on the increasing of the photoelectric conversion efficiency.
Description
Technical field
The utility model relates to a kind of solar cell, is specifically related to a kind of N type silicon solar cell.
Background technology
Conventional fossil fuel is approach exhaustion day by day, and in all sustainable energies, solar energy is undoubtedly a kind of cleaning, general and the most potential alternative energy source.At present; In all solar cells; Silicon solar cell is one of solar cell that obtains business promotion on a large scale; This is because silicon materials have very abundant reserves in the earth's crust, and the silicon solar cell solar cell of comparing other types has excellent electric property and mechanical performance simultaneously, silicon solar cell in the photovoltaic field in occupation of consequence.Therefore, the silicon solar cell of research and development high performance-price ratio has become one of main direction of studying of various countries photovoltaic enterprise.
Existing silicon solar cell mainly comprises at the bottom of the silicon wafer-based; Front at the bottom of the silicon wafer-based is provided with the emitter junction layer; Constitute the PN junction structure with substrate, the surface of emitter junction layer is provided with suede structure, passivation layer and anti-reflection layer successively on the suede structure; Anti-reflection layer is provided with positive electrode, and the back side at the bottom of the silicon wafer-based is provided with negative electrode.Wherein, mainly comprise P type and two kinds of silicon chips of N type at the bottom of the silicon wafer-based at present.Comparing with the solar cell that with P type silicon chip is the substrate manufacturing, owing to do not have B-O compound right in the N type silicon chip, is that the solar cell of substrate manufacturing does not have tangible optical attenuation phenomenon with N type silicon chip; And the minority carrier life time of N type silicon chip is higher than P type silicon chip, so N type silicon solar cell has obtained increasing concern.
At present; With the average light photoelectric transformation efficiency of the conventional N type silicon solar cell of method for printing screen suitability for industrialized production between 18.5 ~ 19%; Though comparing with the conversion efficiency of conventional P type silicon solar cell 18 ~ 18.5% has certain advantage, because the difference of foreign atom segregation coefficient, the manufacturing cost of N type silicon chip will be higher than P type silicon chip; Correspondingly, the manufacturing cost of N type silicon solar cell also will be higher than P type silicon solar cell.Consider that from the angle of cost and balance of efficiency N type silicon solar cell is not superior to P type silicon solar cell.Therefore, developing the more N type silicon solar cell of high-photoelectric transformation efficiency, to strengthen its market competitiveness, is research staff's the task of top priority.
Summary of the invention
The purpose of the utility model provides a kind of N type silicon solar cell with high light photoelectric transformation efficiency.
For reaching the foregoing invention purpose, the technical scheme that the utility model adopts is: a kind of N type silicon solar cell comprises at the bottom of the N type silicon wafer-based that the front at the bottom of the silicon wafer-based is provided with the P type emitter junction layer that comprises the porous silicon suede structure.
In the preceding text, the said porous silicon suede structure that comprises is meant that suede structure has the structure of porous silicon.This suede structure can be pyramid suede structure or other common suede structures.
In the technique scheme, said P type emitter junction layer comprises P type high-concentration diffusion region territory and P type low-concentration diffusion region territory.It can certainly be the even diffusion zone of P type.
In the technique scheme, the back side at the bottom of the said silicon wafer-based is provided with the N type emitter junction layer that comprises suede structure, and suede structure is provided with anti-reflection layer, and anti-reflection layer is provided with negative electrode.
In the technique scheme, said N type emitter junction layer comprises N type high-concentration diffusion region territory and N type low-concentration diffusion region territory.It can certainly be the even diffusion zone of N type.
In the technique scheme, be provided with passivation layer and anti-reflection layer successively on the suede structure of said P type emitter junction layer, anti-reflection layer is provided with positive electrode, and the back side at the bottom of the silicon wafer-based is provided with negative electrode.
Because the technique scheme utilization, the advantage that the utility model compared with prior art has is:
1, the utility model design has obtained a kind of new N type silicon solar cell; Front at the bottom of silicon wafer-based is provided with the P type emitter junction layer that comprises the porous silicon suede structure; Because porous silicon has the luminescence generated by light effect; Can under the situation of identical incident light, excite more electron-hole pair, thereby improve the photoelectric conversion efficiency of battery greatly; Yet; The charge carrier recombination rate of porous silicon surface is high; Therefore passivation layer is set on textured structure layer, makes the P type surface that comprises porous silicon still keep extremely low recombination-rate surface, guarantee that the luminescence generated by light effect of porous silicon can improve the photoelectric conversion efficiency of battery effectively; The experiment proof: the average light photoelectric transformation efficiency of the battery of the utility model has significant effect more than 20%.
2, the utility model is rational in infrastructure, and is easy to preparation, and cost is lower, has good operability, practicality, is suitable for applying.
Description of drawings
Fig. 1 is the structural representation of the utility model embodiment one.
Wherein: 1, at the bottom of the silicon wafer-based; 2, P type emitter junction layer; 4, passivation layer; 5, antireflection layer; 6, positive electrode; 7, N type emitter junction layer; 9, negative electrode.
Embodiment
Below in conjunction with accompanying drawing and embodiment the utility model is further described:
Embodiment one
Referring to shown in Figure 1, a kind of N type silicon solar cell comprises at the bottom of the N type silicon wafer-based 1, and the front at the bottom of the silicon wafer-based is provided with P type emitter junction layer 2, and this P type emitter junction layer includes the porous silicon suede structure, and this suede structure is a pyramid structure; Be provided with SiO successively on the suede structure of P type emitter junction layer
2Passivation layer 4 and anti-reflection layer 5, anti-reflection layer is provided with the positively charged metal utmost point 6; The back side at the bottom of the said silicon wafer-based is provided with the N type emitter junction layer 7 that comprises suede structure, and N type emitter junction layer is provided with anti-reflection layer 5, and anti-reflection layer is provided with metal negative electrode 9.
The photoelectric conversion efficiency of above-mentioned N type silicon solar cell is more than 20%.
Above-mentioned N type silicon solar cell can prepare as follows:
The first step is carried out chemical cleaning with N type silicon chip earlier;
Second step is at the front and back formation pyramid suede structure of N type silicon chip;
In the 3rd step, form corrosion barrier layer in N type silicon chip back;
In the 4th step, the pyramid suede structure positive at N type silicon chip forms the porous silicon structure, obtains comprising the suede structure of porous silicon;
In the 5th step, remove the corrosion barrier layer at the N type silicon chip back side; Boron diffusion is carried out in front at N type silicon chip, forms P type emitter junction layer;
The 6th step, carry out phosphorous diffusion in N shape silicon chip back, form N type emitter junction layer;
The 7th step is at the positive SiO that generates of N type silicon chip
2Passivation layer;
In the 8th step, generate the SiNx antireflection layer in N type silicon chip front and back deposition;
In the 9th step, silk screen printing is positive, the back metal electrode; The electrode sintering forms ohmic contact; Thereby obtain the porous silicon surface N type silicon solar cell of the utility model.
Embodiment two
A kind of N type silicon solar cell comprises at the bottom of the N type silicon wafer-based that the front at the bottom of the silicon wafer-based is provided with P type emitter junction layer, and this P type emitter junction layer includes the porous silicon suede structure, and this suede structure is a pyramid structure; Be provided with SiO successively on the suede structure of P type emitter junction layer
2Passivation layer and anti-reflection layer, anti-reflection layer are provided with the positively charged metal utmost point;
The back side at the bottom of the said silicon wafer-based is provided with back of the body electric field layer, sets up the metal negative electrode on the back of the body electric field layer.
The photoelectric conversion efficiency of above-mentioned N type silicon solar cell is more than 20%.
Above-mentioned N type silicon solar cell can prepare as follows:
The first step is carried out chemical cleaning with N type silicon chip earlier;
In second step, form the pyramid suede structure in the front of N type silicon chip;
In the 3rd step, form corrosion barrier layer in N type silicon chip back;
In the 4th step, the pyramid structure positive at N type silicon chip forms porous silicon, obtains comprising the pyramid suede structure of porous silicon;
In the 5th step, remove the corrosion barrier layer at the N type silicon chip back side; Boron diffusion is carried out in front at N type silicon chip, forms P type emitter junction layer;
The 6th step, carry out phosphorous diffusion in N shape silicon chip back, form back of the body electric field;
In the 7th step, generate SiO in the positive deposition of N type silicon chip
2Passivation layer;
In the 8th step, generate the SiNx antireflection layer in the positive deposition of N type silicon chip;
In the 9th step, silk screen printing is positive, the back metal electrode; The electrode sintering forms ohmic contact; Thereby obtain said N type silicon solar cell.
Claims (5)
1. N type silicon solar cell comprises (1) at the bottom of the N type silicon wafer-based that it is characterized in that: the front at the bottom of the silicon wafer-based is provided with the P type emitter junction layer (2) that comprises the porous silicon suede structure.
2. N type silicon solar cell according to claim 1 is characterized in that: said P type emitter junction layer comprises P type high-concentration diffusion region territory and P type low-concentration diffusion region territory.
3. N type silicon solar cell according to claim 1 is characterized in that: the back side at the bottom of the said silicon wafer-based is provided with the N type emitter junction layer (7) that comprises suede structure, and suede structure is provided with anti-reflection layer, and anti-reflection layer is provided with negative electrode.
4. N type silicon solar cell according to claim 3 is characterized in that: said N type emitter junction layer comprises N type high-concentration diffusion region territory and N type low-concentration diffusion region territory.
5. N type silicon solar cell according to claim 1 is characterized in that: be provided with passivation layer (4) and anti-reflection layer (5) on the suede structure of said P type emitter junction layer successively, anti-reflection layer is provided with positive electrode (6), and the back side at the bottom of the silicon wafer-based is provided with negative electrode (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120251151 CN202145453U (en) | 2011-07-15 | 2011-07-15 | N-type silicon solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120251151 CN202145453U (en) | 2011-07-15 | 2011-07-15 | N-type silicon solar battery |
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| Publication Number | Publication Date |
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| CN202145453U true CN202145453U (en) | 2012-02-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201120251151 Expired - Fee Related CN202145453U (en) | 2011-07-15 | 2011-07-15 | N-type silicon solar battery |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105304733A (en) * | 2015-03-13 | 2016-02-03 | 常州天合光能有限公司 | Solar cell micro nano size light trapping structure, solar cell and fabrication method thereof |
-
2011
- 2011-07-15 CN CN 201120251151 patent/CN202145453U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105304733A (en) * | 2015-03-13 | 2016-02-03 | 常州天合光能有限公司 | Solar cell micro nano size light trapping structure, solar cell and fabrication method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 215129 Suzhou high tech Zone, Jiangsu, Lu Shan Road, No. 199 Co-patentee after: Artes sunshine Power Group Co. Ltd. Patentee after: Suzhou Canadian Solar Inc. Address before: 215129 Suzhou high tech Zone, Jiangsu, Lu Shan Road, No. 199 Co-patentee before: Canadian (China) Investment Co., Ltd. Patentee before: Suzhou Canadian Solar Inc. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120215 Termination date: 20200715 |
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| CF01 | Termination of patent right due to non-payment of annual fee |