CN102832091A - Strong current Hall ion source system - Google Patents
Strong current Hall ion source system Download PDFInfo
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- CN102832091A CN102832091A CN 201110157976 CN201110157976A CN102832091A CN 102832091 A CN102832091 A CN 102832091A CN 201110157976 CN201110157976 CN 201110157976 CN 201110157976 A CN201110157976 A CN 201110157976A CN 102832091 A CN102832091 A CN 102832091A
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- ion source
- hall ion
- source
- electron source
- anode
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Abstract
The invention discloses a strong current Hall ion source system. In general, ion current density and energy of a Hall ion source are low, so that a coating demand with a higher requirement cannot be met. The purpose of the invention is to provide the strong current Hall ion source system with higher ion current density and the energy.
Description
Technical field: the hall ion source that the invention belongs to optical vacuum assisted deposition purposes.
Technical background: be used for the hall ion source of optical vacuum assisted deposition, be operated in the vacuum chamber, have anode and negative electrode, magnetic circuit and gas distribution structure and corresponding negative electrode and anode supply.Through anode and negative electrode gas discharge ionization body and the speeding-up ion in the V-arrangement field regions, the film of bombardment optical mirror slip makes it more firm.Usually, ion current density and energy that hall ion source produces are on the low side, and ion flow power generally surpasses only 300 watts at 200 watts with interior, is starkly lower than the ion flow power of radio-frequency ion source and APS source multikilowatt, can not satisfy the plated film needs of high requirement.
Summary of the invention: the objective of the invention is the high current hall ion source system that will provide a kind of ion flow power higher.The objective of the invention is to realize like this: the present invention does not change the basic structure of hall ion source; Just insert a direct current positive bias power supply over the ground at the hall ion source anode; And electron source of supporting increase in vacuum chamber, this high current hall ion source system is a system that is combined by said hall ion source and said electron source.
The voltage range of said grid bias power supply can be in 50 to 150v scopes, and electric current generally is not more than anode current.
In said and electron source, can be the hollow cathode electron source, also can be plasma bridge electron source or radio frequency electric source, and the output current of this electron source should be greater than 1.2 to 1.5 times of grid bias power supply electric current.These several kinds of electron sources all are non-patent prior arts.
After inserting said grid bias power supply, can observe and measure the increase of ion flow several times, positive bias has also improved the energy of ion flow simultaneously, thereby makes the power of ion flow can reach 1000 watts of energy levels.
The effect of said electron source is exactly the positive charge of said hall ion source generation that neutralizes, need for use in the plated film of insulating material and medium
The invention accompanying drawing: accompanying drawing 1 is the structured flowchart of said high current hall ion source.
Among the figure: 1, cathode power, 2, cathode filament, 3, anode, 4, anode supply, 5, dc bias power.It is that anode supply is anodal that the positive pole of said grid bias power supply (5) is connected to the ion source anode, minus earth, and said ion source anode supply negative pole is earth-free.
Embodiment: said high current hall ion source system is used for the device of optical vacuum assisted deposition; Half side center in box-type vacuum coating machine vacuum chamber base plate; Place said high current hall ion source; Outside the vacuum chamber base plate half side center place said in and electron source, the work rest of line transmit direction points upwards.The stainless steel sleeve that a ground connection is arranged in the outside of said high current ion source, this sleeve are higher than 5 to 10 centimetres of said ion sources.
Claims (2)
1. high current hall ion source system; Hall ion source with anode, negative electrode, magnetic circuit and gas distribution structure; It is characterized in that the present invention is a system that is combined by said hall ion source and said electron source; The present invention does not change the basic structure of hall ion source, just inserts a direct current positive bias power supply over the ground at the hall ion source anode, and in vacuum chamber electron source of supporting increase.
2. high current hall ion source according to claim 1 system is characterized in that said electron source is hollow cathode electron source or plasma bridge electron source or radio frequency electric source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110157976 CN102832091A (en) | 2011-06-14 | 2011-06-14 | Strong current Hall ion source system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110157976 CN102832091A (en) | 2011-06-14 | 2011-06-14 | Strong current Hall ion source system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102832091A true CN102832091A (en) | 2012-12-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110157976 Pending CN102832091A (en) | 2011-06-14 | 2011-06-14 | Strong current Hall ion source system |
Country Status (1)
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| CN (1) | CN102832091A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020062656A1 (en) * | 2018-09-27 | 2020-04-02 | 中山市博顿光电科技有限公司 | Strip-shaped hall-effect ion source |
-
2011
- 2011-06-14 CN CN 201110157976 patent/CN102832091A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020062656A1 (en) * | 2018-09-27 | 2020-04-02 | 中山市博顿光电科技有限公司 | Strip-shaped hall-effect ion source |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20121219 |