CN102820416B - 暖白光发光二极管及其制作方法 - Google Patents

暖白光发光二极管及其制作方法 Download PDF

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CN102820416B
CN102820416B CN201210331791.7A CN201210331791A CN102820416B CN 102820416 B CN102820416 B CN 102820416B CN 201210331791 A CN201210331791 A CN 201210331791A CN 102820416 B CN102820416 B CN 102820416B
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wafer
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reflector
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CN102820416A (zh
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吴超瑜
吴俊毅
邱姝颖
陈怡燕
陶青山
蔡文必
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Tianjin Sanan Optoelectronics Co Ltd
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Abstract

本发明公开了一种暖白光发光二极管及其制作方法，该LED结构将红光晶片与蓝光晶片通过焊合层组合在一起，且所述焊合层的上下表面分别设置有一反射层，红光晶片的下表面面积占据蓝光晶片的上表面面积小于或者等于三分之一，从而有效地降低封装结构体积，减少打线次数，优化工艺流程，节省制作成本。

Description

暖白光发光二极管及其制作方法
技术领域
本发明涉及发光二极管及其制备方法，更具体地是暖白光发光二极管及其制作方法。
背景技术
LED发光二极管是一种固态的半导体器件，它可以直接把电转化为光。白光LED具有发光效率高、省电、无热辐射、不含水银等重金属、无污染及废弃物处理问题等众多优点，被视为“绿色照明光源”的明日之星。目前主要采用三种方式来实现白光：第一种方式是蓝光LED发光二极管激发黄色荧光粉产生白光；第二种方式是紫外光LED激发RGB三波长荧光粉来产生白光；第三种方式是RGB三基色LED发光二极管做混光而形成白光。前两种方式都是靠发光二极管激发荧光粉发光，光转换效率较低，而且封装过程荧光粉涂覆很难控制，容易出现发光颜色不正，颜色不均匀等现象；第三种方式需要较复杂的电路驱动，生产成本高，不利其商业化的推广应用。
现有的暖白光LED包括基座、蓝色晶片、金线，蓝色晶片固定在基座内，金线分别与蓝色晶片和基座固定连接，在蓝色晶片的外表面包覆有一层荧光粉层，该荧光粉层为黄色荧光粉和红色荧光粉的混合物，再用环氧胶封装基座外围。此种暖白光LED利用蓝色晶片发出的蓝光，激发荧光粉发出黄光和红光，再混合成低色温的暖白光。由于白光中增加了红色成分，而红色荧光粉转换效率低，出光效率远远低于传统的黄色荧光粉，导致此种暖白光LED的总体出光效率降低了40～50％。
另外一种暖白光LED为外表面包覆有一层黄色荧光粉层的蓝色晶片与红光晶片混合，发出暖白光。但是，在封装过程都同时存在以下问题：红光晶片所已发出的光亮度容易被蓝光晶片吸收，而蓝光晶片发出的亮度容易被红光晶片吸收，故设计蓝光晶片与红光晶片设置上会有一定的距离，其存在混光问题；另外封装结构需要很大，这样大大增加了生产成本；再者，红光晶片与蓝光晶片都为个别晶片，打线繁杂容易造成异常，成本高。
发明内容
本发明公开了一种暖白光发光二极管及其制作方法，该LED结构将红光晶片与蓝光晶片通过焊合层组合在一起，且所述焊合层的上下表面分别设置有一反射层，红光晶片的下表面面积占据蓝光晶片的上表面面积小于或者等于三分之一，从而有效地降低封装结构体积，减少打线次数，优化工艺流程，节省制作成本。
第一个方面，暖白光发光二极管，包括：焊合层，其具有两个主表面；红光晶片镜面系统，位于所述焊合层的第一个主表面之上，所述红光晶片镜面系统包括红光晶片和第一反射层；蓝光晶片镜面系统，位于所述焊合层的第二个主表面之上，所述蓝光晶片镜面系统包括蓝光晶片和第二反射层，利用第一反射层与第二反射层区隔红光晶片与蓝光晶片，避免相互吸收。
优选地，所述红光晶片的下表面面积占据蓝光晶片的上表面面积小于或者等于三分之一。
第二个方面，暖白光发光二极管的制作方法，包括：将红光晶片镜面系统与蓝光晶片镜面系统通过焊合层组合在一起，其特征在于：所述红光晶片镜面系统包括红光晶片和第一反射层；所述蓝光晶片镜面系统包括蓝光晶片和第二反射层，所述第二反射层，位于未涂覆黄色荧光粉的蓝光晶片表面上；所述红光晶片的下表面面积占据蓝光晶片的上表面面积小于或者等于三分之一；焊合层组合方式为晶片键合或电镀粘合。
附图说明
图1~图8为根据本发明实施的一种高亮度发光二极管的剖面示意流程图。
图9为图8的俯视示意图。
图中各标号表示：
100：生长衬底；
101，201：n型限制层；
102，202：发光层；
103，203：p型限制层；
104：P-GaP窗口层；
105：P电极；
106：临时衬底；
107：介电层；
108：金属反射层；
200：永久衬底；
204：第二反射层；
205：N电极；
300：焊合层；
400：黄色荧光粉。
具体实施方式
以下实施例公开了一种暖白光发光二极管及其制作方法，该LED结构将红光晶片与涂覆黄色荧光粉的蓝光晶片通过焊合层组合在一起，且所述焊合层的上下表面分别设置有一反射层，红光晶片的下表面面积占据蓝光晶片的上表面面积小于或者等于三分之一，从而有效地降低封装结构体积，减少打线次数，优化工艺流程，节省制作成本。
暖白光LED包括焊合层，其具有两个主表面；红光晶片镜面系统，位于所述焊合层的第一个主表面之上，所述红光晶片镜面系统包括红光晶片和第一反射层；涂覆黄色荧光粉的蓝光晶片镜面系统，位于所述焊合层的第二个主表面之上，所述蓝光晶片镜面系统包括蓝光晶片和第二反射层，所述第二反射层，位于未涂覆黄色荧光粉的蓝光晶片表面上。
红光晶片包括发光外延层，还可以包括透明导电层。制作的红光晶片的生长衬底可采用GaAs，制作的红光晶片的临时衬底可采用Si、GaP、SiC、Cu、Ni、Mo、AlN等。红光晶片的发光外延层的材料为AlGaInP四元系半导体化合物，结构上包括n型限制层、发光层和p型限制层，其中发光层可为多量子阱结构。第一反射层可为金属反射层或者介电层或者前两者的结合。
蓝光晶片包括生长衬底、发光外延层，还可以包括透明导电层。蓝光晶片的永久衬底可采用Si、GaN、SiC、Al2O3等。蓝光晶片的发光外延层的材料为GaN或InGaN半导体化合物，结构上包括n型限制层、发光层和p型限制层，其中发光层可为多量子阱结构。第二反射层可为金属反射层或者介电层或者前两者的结合。金属反射层可选用Al、Ag、Ni、Zn中的至少一种金属。
利用焊合层结构将红光芯片与蓝光芯片结合，加上涂覆黄色荧光粉可以制造出极小的暖白光光源，还可以减少打线作业次数，节省制作成本；利用第一反射层与第二反射层设计可以有效地区隔红光晶片与蓝光晶片避免相互吸收，亦可以有效降低封装体大小。
以下结合实施例及附图对本发明的更多具体细节做进一步的说明。
实施例
如图8和9所示，暖白光LED包括焊合层300，其具有两个主表面；红光晶片镜面系统，位于所述焊合层300的第一个主表面之上；涂覆黄色YAG荧光粉400的蓝光晶片镜面系统，位于所述焊合层300的第二个主表面之上；红光晶片的下表面面积占据蓝光晶片的上表面面积等于三分之一。
所述红光晶片镜面系统包括红光晶片和第一反射层，所述第一反射层由网格状的SiO2介质层107和Ag金属反射层108组成；红光晶片从下至上依次由n-AlGaInP层101、发光层102、p-AlGaInP层103、粗化过的GaP窗口层104和N电极105组成。
所述蓝光晶片镜面系统包括蓝光晶片和第二反射层204，所述第二反射层204由Ag金属反射层组成，位于未覆盖黄色YAG荧光粉400的蓝光晶片表面上；蓝光晶片从下至上依次由永久蓝宝石衬底200、n-GaN层201、发光层202、p-GaN层203和P电极205组成。
暖白光LED的制作工艺流程主要有以下步骤：
如图1所示，先在GaAs生长衬底100上从下至上依次外延生长n-AlGaInP层101、发光层102、P-AlGaInP层103和GaP窗口层104，并制作P电极105，再采用干法蚀刻将GaP窗口层104形成粗化结构。
如图2所示，将上述粗化结构采用键合方式，转移至Si临时衬底上106。
如图3所示，移除GaAs生长衬底100，裸露出n-AlGaInP层101表面，形成红光晶片。
如图4所示，在裸露的n-AlGaInP层101表面上形成第一反射层结构，第一反射层由网格状的SiO2介质层107和Ag金属反射层108组成。
如图5所示，在永久蓝宝石衬底200上从下至上依次外延生长n-GaN层201、发光层202、p-GaN层203，并制作第二反射层（Ag金属反射层）204和N电极205，再采用湿法蚀刻将p-GaN层203形成粗化结构。
如图6所示，采用晶片键合技术，将红光晶片与蓝光晶片通过焊合层300组合在一起，焊合层300的上表面设置有第一反射层（由网格状的SiO2介质层107和Ag金属反射层108组成），下表面设置有第二反射层204。
如图7所示，移除Si临时衬底106。
如图8和图9所示，涂覆黄色YAG荧光粉400于所述粗化过的蓝光晶片的p-GaN层上，即完成暖白光LED的制作。

Claims (8)

1.暖白光发光二极管，包括：焊合层，其具有两个主表面；红光晶片镜面系统，位于所述焊合层的第一个主表面之上，所述红光晶片镜面系统包括红光晶片和第一反射层；蓝光晶片镜面系统，位于所述焊合层的第二个主表面之上，所述蓝光晶片镜面系统包括蓝光晶片和第二反射层；利用第一反射层与第二反射层区隔红光晶片与蓝光晶片，避免相互吸收；红光晶片的下表面面积小于或等于蓝光晶片的上表面面积的三分之一。
2.根据权利要求1所述的暖白光发光二极管，其特征在于：所述蓝光晶片的上表面上覆盖一层黄色荧光粉，所述第二反射层位于未涂覆黄色荧光粉的蓝光晶片表面上。
3.根据权利要求1所述的暖白光发光二极管，其特征在于：第一反射层为金属反射层或者介电层或者前两者的结合。
4.根据权利要求1所述的暖白光发光二极管，其特征在于：第二反射层为金属反射层或者介电层或者前两者的结合。
5.暖白光发光二极管的制作方法，包括：将红光晶片镜面系统与蓝光晶片镜面系统通过焊合层组合在一起，其特征在于：所述红光晶片镜面系统包括红光晶片和第一反射层；所述蓝光晶片镜面系统包括蓝光晶片和第二反射层，利用第一反射层与第二反射层区隔红光晶片与蓝光晶片，避免相互吸收；红光晶片的下表面面积占据蓝光晶片的上表面面积小于或者等于三分之一。
6.根据权利要求5所述的暖白光发光二极管的制作方法，其特征在于：焊合层组合方式为晶片键合或电镀粘合。
7.根据权利要求5所述的发光二极管的制作方法，包括步骤：
先在生长衬底上从下至上依次外延生长n型限制层、发光层和p型限制层，并制作P电极，再将p型限制层形成粗化结构；
将上述粗化结构转移至临时衬底上；
移除生长衬底，裸露n型限制层表面，形成红光晶片；
在裸露的n型限制层表面上形成第一反射层结构；
在永久衬底上从下至上依次外延生长n型限制层、发光层、p型限制层，并制作第二反射层和N电极，再将p型限制层形成粗化结构；
将红光晶片与蓝光晶片通过焊合层组合在一起，焊合层的上表面设置有第一反射层，下表面设置有第二反射层；
移除临时衬底，完成暖白光LED的制作。
8.根据权利要求5所述的发光二极管的制作方法，包括步骤：
先在生长衬底上从下至上依次外延生长n型限制层、发光层、p型限制层和透明导电层，并制作P电极，再将透明导电层形成粗化结构；
将上述粗化结构转移至临时衬底上；
移除生长衬底，裸露n型限制层表面，形成红光晶片；
在裸露的n型限制层表面上形成第一反射层结构；
在永久衬底上从下至上依次外延生长n型限制层、发光层、p型限制层，并制作第二反射层和N电极，再将p型限制层形成粗化结构；
将红光晶片与蓝光晶片通过焊合层组合在一起，焊合层的上表面设置有第一反射层，下表面设置有第二反射层；
移除临时衬底，完成暖白光LED的制作。
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