CN102820410A - Light-emitting component packaging structure - Google Patents

Light-emitting component packaging structure Download PDF

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Publication number
CN102820410A
CN102820410A CN 201210298160 CN201210298160A CN102820410A CN 102820410 A CN102820410 A CN 102820410A CN 201210298160 CN201210298160 CN 201210298160 CN 201210298160 A CN201210298160 A CN 201210298160A CN 102820410 A CN102820410 A CN 102820410A
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China
Prior art keywords
light
emitting component
carrier
plane
emitting
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CN 201210298160
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CN102820410B (en
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许嘉良
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Epistar Corp
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Epistar Corp
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Abstract

The invention discloses a light-emitting component structure which comprises a transparent substrate, a light-emitting component and a carrier, wherein the transparent substrate is provided with a first plane and a second plane, the light-emitting component is arranged on the first plane and can emit light penetrating through the second plane, the carrier is connected with one end, beyond a light-emitting structure, of the transparent substrate through a connecting material, and an included angle of about 45-135 DEG C is formed between the carrier and the first plane.

Description

The encapsulating structure of light-emitting component
Present specification the dividing an application that be the denomination of invention submitted on January 28th, 2008 for No. 200810003224.2 application for a patent for invention of " encapsulating structure of light-emitting component ".
Technical field
The present invention relates to a kind of encapsulating structure of light-emitting component.
Background technology
Light-emitting diode (the Light-Emitting Diode that generally has transparency carrier; LED) can be divided into vertical type (Face-up type) and flip-over type (Flip-chip type).Wherein vertically standing LED is bonded on the carrier with glue material or metal, and the flip-over type light-emitting diode is then made joint with metal or scolding tin, the forward light-emitting area that its main set face is a light-emitting diode or its parallel surface.Because the bright dipping of lumination of light emitting diode layer is 360 degree, so bright dipping down is generally by reflecting surface reflected back forward exiting surface or via the transparency carrier bright dipping again.But the thickness of transparency carrier can not be too thick, to avoid the bright dipping strength reduction.In addition, when the light-emitting diode size heals when big, reverberation will be arranged the more, and (Multi Quantum Well MQW), reduces because of the extinction effect makes light extraction efficiency through the multiple quantum trap structure in the luminescent layer.
Fig. 1 is the conventional luminescent device encapsulating structure.As shown in the figure, set face 1 is bonded on the plane of carrier 3 for light-emitting diode chip for backlight unit 100, and this plane is parallel with the forward exiting surface 4 of light-emitting diode chip for backlight unit 100.Light down is by a reflecting surface 2 a reflected back forward exiting surface 4 or a side direction exiting surface 5 again.This packaged type shortcoming is for healing when big when the light-emitting diode chip for backlight unit size, reverberation arranged the more through the multiple quantum trap structure in the luminescent layer, because of the extinction effect makes the light extraction efficiency reduction.
Summary of the invention
The present invention provides a kind of encapsulating structure of light-emitting component, and this encapsulating structure comprises a light-emitting component and a carrier.Wherein this light-emitting component is bonded on the transparency carrier, sees through a connection material this light-emitting component is connected on the carrier, and wherein first plane of this transparency carrier and the angle between this carrier are not equal to zero degree.In a preferred embodiment, first plane of transparency carrier and the angle between this carrier are about the 45-135 degree, are more preferred from about 90 degree.
The present invention provides a kind of encapsulating structure of light-emitting component, with edge-on packaged type, lets the element bottom become effective exiting surface of easy bright dipping at least one light-emitting component.So not only can reduce the absorption of luminescent layer, light extraction efficiency is significantly promoted.
The present invention provides a kind of encapsulating structure of light-emitting component, uses one to connect material and be bonded to at least one that formed light-emitting component is connected on the carrier on the transparency carrier, and wherein the angle between this transparency carrier first plane and this carrier is not equal to zero degree.In a preferred embodiment, first plane of transparency carrier and the angle between this carrier are about the 45-135 degree, are more preferred from about 90 degree.In addition, add scatterer (Diffuser) in encapsulating structure, make light produce scattering (Scattering) back from single side bright dipping, and become the encapsulating structure of side view type light emitting element because of the scatterer effect.
The present invention provides a kind of application of luminous element packing structure, a plurality of luminous element packing structure utilizations is connected material be connected on the carrier with reflector.Thin-film material design when a plurality of encapsulating structure collocation have the difference in functionality demand can be applicable to Backlight For Liquid Crystal Display Panels.
The present invention provides a kind of application of luminous element packing structure; With a plurality of light that encapsulating structure sent with side view type light emitting element; Import a LGP; Wherein down light returns in the LGP via a reflective layer reflects, and all light penetrate via thin-film material at last, can be applicable to Backlight For Liquid Crystal Display Panels.
Description of drawings
Fig. 1 shows light-emitting component conventional package mode;
Fig. 2 is the structure side view that shows the light-emitting diode chip for backlight unit of the present invention's use;
Fig. 3 is the structure side view that shows the light-emitting diode chip for backlight unit of another use of the present invention;
Fig. 4 is the structure side view that shows the light-emitting component of the present invention's use;
Fig. 5 is the structure side view that shows the light-emitting component of another use of the present invention;
Fig. 6 is the encapsulating structure end view that shows the light-emitting component of the embodiment of the invention;
Fig. 7 is the encapsulating structure end view that shows the side view type light emitting element of another embodiment of the present invention;
Fig. 8 shows that the embodiment of the invention is applied to the project organization end view of backlight of LCD;
Fig. 9 shows that embodiment of the invention another kind is applied to the project organization end view of backlight of LCD.
Description of reference numerals:
1 ~ set face
2 ~ reflecting surface
3 ~ carrier
4 ~ forward exiting surface
5 ~ side direction exiting surface
10,20 ~ luminous element packing structure
30, the luminous element packing structure of 40 ~ backlight of LCD
100,200,300 ~ light-emitting diode chip for backlight unit
400,500 ~ light-emitting component
201,301 ~ growth substrate
202,302 ~ epitaxial structure
202a, 302a ~ first conductive semiconductor
202b, 302b ~ active layer
202c, 302c ~ second conductive semiconductor
203,303,403,503,606,607 ~ electrode
404 ~ transparency carrier
404a ~ transparency carrier first plane
404b ~ transparency carrier second plane
504 ~ include the transparent substrates of fluorescent powder
505 ~ phosphor powder layer
601,701,801,902 ~ carrier
602,703,802,901 ~ reflector
603~platform
604 ~ lens
605,704,804 ~ connection material
702 ~ scatterer
803,903~thin-film material
902 ~ Polarizer
Embodiment
The present invention discloses a kind of encapsulating structure and manufacturing approach thereof of light-emitting component.In order to make narration of the present invention more detailed and complete, can be with reference to the diagram of following description and cooperation Fig. 2 to Fig. 9.
Fig. 2-3 is the employed light-emitting diode chip for backlight unit of the embodiment of the invention.As shown in Figure 2; Its structure is for utilizing for example Metalorganic chemical vapor deposition method (MOCVD) growing epitaxial structure 202 on growth substrate 201; Wherein epitaxial structure comprises one first conductive semiconductor layer 202a at least; One active layer 202b and one second conductive semiconductor layer 202c form electrode 203, then to form a light-emitting diode chip for backlight unit 200 on epitaxial structure 202.
As shown in Figure 3; Its structure is on growth substrate 301; Utilize for example Metalorganic chemical vapor deposition method (MOCVD) growing epitaxial structure 302, wherein epitaxial structure comprises one first conductive semiconductor layer 302a at least, an active layer 302b and one second conductive semiconductor layer 302c; Again part epitaxial structure 302 from top to bottom is etched to the part of growth substrate, on epitaxial structure 302, forms electrode 303 then, to form a light-emitting diode chip for backlight unit 300.
Shown in Figure 4 is the sketch map of a light-emitting component 400.Light-emitting diode chip for backlight unit is placed on the first plane 404a of a transparency carrier 404 as 200 or 300, to form a light-emitting component 400.With light-emitting diode chip for backlight unit 200 structures is example, and its structure comprises a growth substrate 201; One epitaxial structure 202 is formed on the growth substrate 201, and wherein epitaxial structure comprises one first conductive semiconductor layer 202a at least, an active layer 202b and one second conductive semiconductor layer 202c; And an electrode 203, be formed on the epitaxial structure 202.
Shown in Figure 5 is the sketch map of a light-emitting component 500.To place one to include on the transparency carrier 504 of fluorescent powder with the light-emitting diode chip for backlight unit of light-emitting diode chip for backlight unit 200 or 300 same structures, form a light-emitting component 500.With light-emitting diode chip for backlight unit 200 structures is example, and its structure comprises a growth substrate 201; One epitaxial structure 202 is formed on the growth substrate 201, and wherein epitaxial structure comprises one first conductive semiconductor layer 202a at least, an active layer 202b and one second conductive semiconductor layer 202c; And an electrode 203, be formed on the epitaxial structure 202.Then, cover layer of fluorescent powder layer 505, promptly form a light-emitting component 500 in light-emitting diode chip for backlight unit 200 tops and on every side.
Fig. 6 is the structure side view of encapsulating structure first embodiment of the present invention.Aforesaid light- emitting component 400 or 500 structures all can be used among each embodiment of encapsulating structure of the present invention, for only avoiding repeating with light-emitting component 400 as representative.As shown in Figure 6; One has the carrier 601 of reflecting surface inwall 602; Utilize a connection material 605 that the transparency carrier 404 of light-emitting component 400 is connected on the platform 603 of this carrier 601; Wherein this transparency carrier first plane 404a and parallel surface thereof (the second plane 404b) all stand on this platform, and preferably, transparency carrier is haply perpendicular to the platform of this carrier.In addition, the p of light-emitting diode, n electrode are electrically connected with p electrode 606, the n electrode 607 of carrier respectively, form the encapsulating structure 10 of a light-emitting diode.The light that active layer produced of the light-emitting diode chip for backlight unit direction that sheds is omni-directional (omnidirectional); Wherein the light of the directive transparency carrier first plane 404a can pass transparency carrier; And penetrate by the second plane 404b of transparency carrier; After these reflecting surface inwall 602 reflections via carrier, leave this encapsulating structure 10 again.In addition, can add lens (lens) 604 in whole encapsulating structure 10 tops, to increase the light extraction efficiency of whole encapsulating structure.
Fig. 7 is the structure side view of encapsulating structure second embodiment of the present invention.Carrier 701 has a reflecting surface 703, stands on the carrier 701 with the transparency carrier 404 of connection material 704 with light-emitting component 400, and is preferably, vertical haply with this carrier 701.The p/n electrode of light-emitting diode is connected with the p/n electrode electricity of carrier respectively, and with encapsulating structure inner filling scatterer (diffuser) 702, the light that light-emitting component is produced produces scattering (Scattering) because of scatterer.At last, all light (shown in arrow among the figure) penetrate this transparency carrier 404 and are penetrated by its second plane 404b, become the encapsulating structure 20 of a side view type light emitting element.
Fig. 8 is applied to the end view of the project organization 30 of backlight of LCD for the embodiment of the invention.The bottom of carrier 801 has reflector 802; Utilize connection material 804 to be connected in this carrier 801 encapsulating structure 10 of a plurality of light-emitting components; And the p/n electrode of light-emitting diode is connected with the p/n electrode electricity of carrier respectively; Wherein each luminous element packing structure and method are identical with above-mentioned Fig. 6, repeat no more.When light that a plurality of luminous element packing structure sent evenly sends required mixed light by the thin-film material with difference in functionality 803 (as: prismatic lens, Prism Sheet) design, promptly can be used as the structure 30 of backlight of LCD.
Fig. 9 is applied to the sketch map of another project organization 40 collocation one Polarizer 902 of backlight of LCD for the embodiment of the invention.One bottom has the Polarizer (Polarizer) 902 in reflector 901, its superiors' cover film material 903.Behind the backlight of LCD 40 that the packaging body 20 of a plurality of side view type light emitting elements of arranging in pairs or groups is formed; The lateral light that backlight 40 is sent is imported into (shown in arrow among the figure) in the Polarizer 902; Wherein down light is via its reflector 901 again in the reflected back Polarizer; All light are penetrated by thin-film material 903 after mixing and polarization at last, get in other structure of LCD (as: liquid crystal layer) again.Wherein the light direct of travel is shown in arrow.
Though the present invention discloses as above with preferred embodiment; Yet it is not that any those skilled in the art are not breaking away from the spirit and scope of the present invention in order to qualification the present invention; When can doing various changes and retouching, so protection scope of the present invention is when being as the criterion with what accompanying claims limited.

Claims (10)

1. the structure of a light-emitting component comprises:
Transparency carrier has first plane and second plane;
Light-emitting component is arranged on this first plane, and can emit beam and pass this second plane; And
Carrier sees through the connection material and be connected with the end that this transparency carrier exceeds this ray structure, and the angle on this carrier and this first plane is about the 45-135 degree.
2. the structure of light-emitting component as claimed in claim 1, wherein this carrier is electrically connected with this light-emitting component.
3. the structure of light-emitting component as claimed in claim 1, wherein this light-emitting component has active layer, and the area on this first plane is not less than the area of this active layer.
4. the structure of light-emitting component as claimed in claim 1, wherein the angle on this carrier and this first plane is about 90 degree.
5. the structure of light-emitting component as claimed in claim 1, wherein this transparency carrier comprises fluorescent powder.
6. the structure of light-emitting component as claimed in claim 1, wherein this light-emitting component comprises phosphor powder layer.
7. the structure of light-emitting component as claimed in claim 1, wherein this light-emitting component comprises substrate.
8. the structure of light-emitting component as claimed in claim 1, wherein the light that produces of this light-emitting component is omni-directional.
9. the structure of light-emitting component as claimed in claim 1, wherein this carrier comprises the reflector.
10. the structure of light-emitting component as claimed in claim 1 also comprises lens.
CN201210298160.XA 2008-01-28 2008-01-28 Light-emitting component packaging structure Active CN102820410B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
CN201210298160.XA CN102820410B (en) 2008-01-28 2008-01-28 Light-emitting component packaging structure

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN200810003224A Division CN101499504B (en) 2008-01-28 2008-01-28 Luminous element packaging structure

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CN102820410A true CN102820410A (en) 2012-12-12
CN102820410B CN102820410B (en) 2015-06-03

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3127195B2 (en) * 1994-12-06 2001-01-22 シャープ株式会社 Light emitting device and method of manufacturing the same
TWI302755B (en) * 2004-03-12 2008-11-01 Showa Denko Kk Group iii nitride semiconductor light-emitting device, forming method thereof,and lamp using same
KR100799864B1 (en) * 2006-04-21 2008-01-31 삼성전기주식회사 LED Package

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