CN102820410B - Light-emitting component packaging structure - Google Patents
Light-emitting component packaging structure Download PDFInfo
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- CN102820410B CN102820410B CN201210298160.XA CN201210298160A CN102820410B CN 102820410 B CN102820410 B CN 102820410B CN 201210298160 A CN201210298160 A CN 201210298160A CN 102820410 B CN102820410 B CN 102820410B
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Abstract
The invention discloses a light-emitting component structure which comprises a transparent substrate, a light-emitting component and a carrier, wherein the transparent substrate is provided with a first plane and a second plane, the light-emitting component is arranged on the first plane and can emit light penetrating through the second plane, the carrier is connected with one end, beyond a light-emitting structure, of the transparent substrate through a connecting material, and an included angle of about 45-135 DEG C is formed between the carrier and the first plane.
Description
Present specification is the denomination of invention submitted on January 28th, 2008 is the divisional application of No. 200810003224.2 application for a patent for invention of " encapsulating structure of light-emitting component ".
Technical field
The present invention relates to a kind of encapsulating structure of light-emitting component.
Background technology
Generally there is light-emitting diode (the Light-Emitting Diode of transparency carrier; LED) vertical type (Face-up type) and flip-over type (Flip-chip type) can be divided into.Wherein vertically standing LED is bonded on carrier with glue material or metal, and flip-over type light-emitting diode then engages with metal or scolding tin, and its main set face is forward light-emitting area or its parallel surface of light-emitting diode.Because the bright dipping of lumination of light emitting diode layer is 360 degree, so bright dipping down is generally reflected back forward exiting surface again by reflecting surface or via transparency carrier bright dipping.But the thickness of transparency carrier can not be too thick, to avoid bright dipping remitted its fury.In addition, when light-emitting diode size is larger, by there being the more multiple quantum trap structure of reverberation in luminescent layer (Multi Quantum Well, MQW), because of extinction effect, light extraction efficiency is reduced.
Fig. 1 is conventional luminescent device encapsulating structure.As shown in the figure, set face 1 is that light-emitting diode chip for backlight unit 100 is bonded in a plane of carrier 3, and this plane is parallel with the forward exiting surface 4 of light-emitting diode chip for backlight unit 100.Light is down reflected back forward exiting surface 4 or side to exiting surface 5 again by a reflecting surface 2.This packaged type shortcoming, for when light-emitting diode chip for backlight unit size is larger, has the more multiple quantum trap structure of reverberation in luminescent layer, because of extinction effect, light extraction efficiency is reduced.
Summary of the invention
The invention provides a kind of encapsulating structure of light-emitting component, this encapsulating structure comprises a light-emitting component and a carrier.Wherein this light-emitting component is bonded on a transparency carrier, is connected on a carrier through a connecting material by this light-emitting component, and the angle wherein between the first plane of this transparency carrier and this carrier is not equal to zero degree.In a preferred embodiment, the angle between the first plane of transparency carrier and this carrier is about 45-135 degree, is more preferred from about 90 degree.
The invention provides a kind of encapsulating structure of light-emitting component, by least one light-emitting component with edge-on packaged type, allow component base become effective exiting surface of an easier bright dipping.So not only can reduce the absorption of luminescent layer, light extraction efficiency also can be made significantly to promote.
The invention provides a kind of encapsulating structure of light-emitting component, use a connecting material to be connected on a carrier by least one light-emitting component that a transparency carrier is formed that is bonded to, the angle wherein between this transparency carrier first plane and this carrier is not equal to zero degree.In a preferred embodiment, the angle between the first plane of transparency carrier and this carrier is about 45-135 degree, is more preferred from about 90 degree.In addition, add scatterer (Diffuser) in encapsulating structure, light is produced from the bright dipping of single side after scattering (Scattering) because of scatterer effect, and becomes the encapsulating structure of side view type light emitting element.
The invention provides a kind of application of luminous element packing structure, utilize connecting material to be connected to multiple luminous element packing structure and have on the carrier in reflector.When multiple encapsulating structure collocation has the thin-film material design of difference in functionality demand, can be applicable to the backlight of liquid crystal display.
The invention provides a kind of application of luminous element packing structure, by the light that multiple encapsulating structure with side view type light emitting element sends, import a light guide plate, wherein light down returns in light guide plate via a reflective layer reflects, finally all light penetrates via thin-film material, can be applicable to the backlight of liquid crystal display.
Accompanying drawing explanation
Fig. 1 is display light-emitting component conventional package mode;
Fig. 2 is the structure side view of the light-emitting diode chip for backlight unit that display the present invention uses;
Fig. 3 is the structure side view of another light-emitting diode chip for backlight unit used of display the present invention;
Fig. 4 is the structure side view of the light-emitting component that display the present invention uses;
Fig. 5 is the structure side view of another light-emitting component used of display the present invention;
Fig. 6 is the encapsulating structure end view of the light-emitting component of the display embodiment of the present invention;
Fig. 7 is the encapsulating structure end view of the side view type light emitting element of display another embodiment of the present invention;
Fig. 8 is the project organization end view that the display embodiment of the present invention is applied to backlight of LCD;
Fig. 9 is the project organization end view that display embodiment of the present invention another kind is applied to backlight of LCD.
Description of reference numerals:
1 ~ set face
2 ~ reflecting surface
3 ~ carrier
4 ~ forward exiting surface
5 ~ side direction exiting surface
10,20 ~ luminous element packing structure
30, the luminous element packing structure of 40 ~ backlight of LCD
100,200,300 ~ light-emitting diode chip for backlight unit
400,500 ~ light-emitting component
201,301 ~ growth substrate
202,302 ~ epitaxial structure
202a, 302a ~ first conductive semiconductor
202b, 302b ~ active layer
202c, 302c ~ second conductive semiconductor
203,303,403,503,606,607 ~ electrode
404 ~ transparency carrier
404a ~ transparency carrier first plane
404b ~ transparency carrier second plane
504 ~ include the transparent substrates of fluorescent powder
505 ~ phosphor powder layer
601,701,801,902 ~ carrier
602,703,802,901 ~ reflector
603 ~ platform
604 ~ lens
605,704,804 ~ connecting material
702 ~ scatterer
803,903 ~ thin-film material
902 ~ Polarizer
Embodiment
The present invention discloses a kind of encapsulating structure and manufacture method thereof of light-emitting component.In order to make of the present inventionly to describe more detailed and complete, can refer to following description and coordinating the diagram of Fig. 2 to Fig. 9.
The light-emitting diode chip for backlight unit that Fig. 2-3 uses for the embodiment of the present invention.As shown in Figure 2, its structure for utilize such as Metalorganic chemical vapor deposition method (MOCVD) growing epitaxial structure 202 on growth substrate 201, its epitaxial structures at least comprises one first conductive semiconductor layer 202a, one active layer 202b and one second conductive semiconductor layer 202c, then on epitaxial structure 202, electrode 203 is formed, to form a light-emitting diode chip for backlight unit 200.
As shown in Figure 3, its structure is on growth substrate 301, utilize such as Metalorganic chemical vapor deposition method (MOCVD) growing epitaxial structure 302, its epitaxial structures at least comprises one first conductive semiconductor layer 302a, an active layer 302b and one second conductive semiconductor layer 302c; Again part epitaxial structure 302 is from top to bottom etched to a part for growth substrate, then on epitaxial structure 302, forms electrode 303, to form a light-emitting diode chip for backlight unit 300.
Figure 4 shows that the schematic diagram of a light-emitting component 400.Light-emitting diode chip for backlight unit is placed on the first plane 404a of a transparency carrier 404, to form a light-emitting component 400 as 200 or 300.For light-emitting diode chip for backlight unit 200 structure, its structure comprises a growth substrate 201; One epitaxial structure 202 is formed on growth substrate 201, and its epitaxial structures at least comprises one first conductive semiconductor layer 202a, an active layer 202b and one second conductive semiconductor layer 202c; And an electrode 203, be formed on epitaxial structure 202.
Figure 5 shows that the schematic diagram of a light-emitting component 500.Light-emitting diode chip for backlight unit with light-emitting diode chip for backlight unit 200 or 300 same structure is placed in one include on the transparency carrier 504 of fluorescent powder, forms a light-emitting component 500.For light-emitting diode chip for backlight unit 200 structure, its structure comprises a growth substrate 201; One epitaxial structure 202 is formed on growth substrate 201, and its epitaxial structures at least comprises one first conductive semiconductor layer 202a, an active layer 202b and one second conductive semiconductor layer 202c; And an electrode 203, be formed on epitaxial structure 202.Then, above light-emitting diode chip for backlight unit 200 and around, cover layer of fluorescent powder layer 505, namely form a light-emitting component 500.
Fig. 6 is the structure side view of encapsulating structure first embodiment of the present invention.Aforesaid light-emitting component 400 or 500 structure all can be used in each embodiment of encapsulating structure of the present invention, for avoiding only repeating with light-emitting component 400 representatively.As shown in Figure 6, one carrier 601 with reflecting surface inwall 602, a connecting material 605 is utilized to be connected on the platform 603 of this carrier 601 by the transparency carrier 404 of light-emitting component 400, wherein this transparency carrier first plane 404a and parallel surface (the second plane 404b) thereof all stand on this platform, preferably, transparency carrier is haply perpendicular to the platform of this carrier.In addition, the p of light-emitting diode, n-electrode are electrically connected with the p-electrode 606 of carrier, n-electrode 607 respectively, form the encapsulating structure 10 of a light-emitting diode.The light that the active layer of light-emitting diode chip for backlight unit the produces direction that sheds is omni-directional (omnidirectional), wherein the light of directive transparency carrier first plane 404a can pass transparency carrier, and penetrated by the second plane 404b of transparency carrier, after this reflecting surface inwall 602 reflection of carrier, then leave this encapsulating structure 10.In addition, lens (lens) 604 can be added above whole encapsulating structure 10, to increase the light extraction efficiency of whole encapsulating structure.
Fig. 7 is the structure side view of encapsulating structure second embodiment of the present invention.Carrier 701 has a reflecting surface 703, stands on carrier 701 with connecting material 704 by the transparency carrier 404 of light-emitting component 400, preferably, vertical haply with this carrier 701.The p/n electrode of light-emitting diode is electrically connected with the p/n electrode of carrier respectively, and by inner for encapsulating structure filling scatterer (diffuser) 702, the light making light-emitting component produce produces scattering (Scattering) because of scatterer.Finally, all light (as shown by arrows in FIG.) penetrates this transparency carrier 404 and is penetrated by its second plane 404b, becomes the encapsulating structure 20 of a side view type light emitting element.
Fig. 8 is the end view that the embodiment of the present invention is applied to the project organization 30 of backlight of LCD.The bottom of carrier 801 has reflector 802, connecting material 804 is utilized by the encapsulating structure 10 of multiple light-emitting component to be connected in this carrier 801, and the p/n electrode of light-emitting diode is electrically connected with the p/n electrode of carrier respectively, wherein each luminous element packing structure and method identical with above-mentioned Fig. 6, repeat no more.The light sent when multiple luminous element packing structure by the thin-film material 803(with difference in functionality as prismatic lens, Prism Sheet) design and evenly send required mixed light, namely can be used as the structure 30 of backlight of LCD.
Fig. 9 is that another project organization 40 that the embodiment of the present invention is applied to backlight of LCD is arranged in pairs or groups the schematic diagram of a Polarizer 902.There is the Polarizer (Polarizer) 902 in reflector 901, its superiors' cover film material 903 bottom one.After the backlight of LCD 40 that the packaging body 20 of arranging in pairs or groups multiple side view type light emitting element forms, the lateral light that backlight 40 sends is imported in Polarizer 902 (as shown by arrows in FIG.), wherein light is down reflected back in Polarizer via its reflector 901 again, finally all light is penetrated by thin-film material 903 after mixing and polarization, then enters in other structure of liquid crystal display (as: liquid crystal layer).Wherein light direct of travel as shown by arrows.
Although the present invention discloses as above with preferred embodiment; but itself and be not used to limit the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when being used for a variety of modifications and variations, therefore protection scope of the present invention is when being as the criterion of limiting with claims.
Claims (9)
1. a structure for light-emitting component, comprises:
Transparency carrier, has the first plane and the second plane;
Light-emitting diode chip for backlight unit, comprises substrate and epitaxial structure and is arranged in this first plane, and can emit beam through this second plane; And
Carrier, the one end exceeding this light-emitting diode chip for backlight unit through connecting material and this transparency carrier be connected make light-emitting diode chip for backlight unit not with this carrier contact, and the angle of this carrier and this first plane is 45-135 degree.
2. the structure of light-emitting component as claimed in claim 1, wherein this carrier is electrically connected with this light-emitting diode chip for backlight unit.
3. the structure of light-emitting component as claimed in claim 1, wherein this light-emitting diode chip for backlight unit has active layer, and the area of this first plane is not less than the area of this active layer.
4. the structure of light-emitting component as claimed in claim 1, wherein the angle of this carrier and this first plane is about 90 degree.
5. the structure of light-emitting component as claimed in claim 1, wherein this transparency carrier comprises fluorescent powder.
6. the structure of light-emitting component as claimed in claim 1, wherein this light-emitting diode chip for backlight unit comprises phosphor powder layer.
7. the structure of light-emitting component as claimed in claim 1, the light that wherein this light-emitting diode chip for backlight unit produces is omni-directional.
8. the structure of light-emitting component as claimed in claim 1, wherein this carrier comprises reflector.
9. the structure of light-emitting component as claimed in claim 1, also comprises lens.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210298160.XA CN102820410B (en) | 2008-01-28 | 2008-01-28 | Light-emitting component packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210298160.XA CN102820410B (en) | 2008-01-28 | 2008-01-28 | Light-emitting component packaging structure |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810003224A Division CN101499504B (en) | 2008-01-28 | 2008-01-28 | Luminous element packaging structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102820410A CN102820410A (en) | 2012-12-12 |
| CN102820410B true CN102820410B (en) | 2015-06-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210298160.XA Active CN102820410B (en) | 2008-01-28 | 2008-01-28 | Light-emitting component packaging structure |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5670797A (en) * | 1994-12-06 | 1997-09-23 | Sharp Kabushiki Kaisha | Compact light-emitting device with sealing member and light-transmitting resin seal |
| TW200539481A (en) * | 2004-03-12 | 2005-12-01 | Showa Denko Kk | Group Ⅲ nitride semiconductor light-emitting device, forming method thereof, lamp and light source using same |
| CN101060116A (en) * | 2006-04-21 | 2007-10-24 | 三星电机株式会社 | Led package |
-
2008
- 2008-01-28 CN CN201210298160.XA patent/CN102820410B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5670797A (en) * | 1994-12-06 | 1997-09-23 | Sharp Kabushiki Kaisha | Compact light-emitting device with sealing member and light-transmitting resin seal |
| TW200539481A (en) * | 2004-03-12 | 2005-12-01 | Showa Denko Kk | Group Ⅲ nitride semiconductor light-emitting device, forming method thereof, lamp and light source using same |
| CN101060116A (en) * | 2006-04-21 | 2007-10-24 | 三星电机株式会社 | Led package |
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| Publication number | Publication date |
|---|---|
| CN102820410A (en) | 2012-12-12 |
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