CN102820233B - A kind of slice power diode package technique - Google Patents
A kind of slice power diode package technique Download PDFInfo
- Publication number
- CN102820233B CN102820233B CN201210309000.0A CN201210309000A CN102820233B CN 102820233 B CN102820233 B CN 102820233B CN 201210309000 A CN201210309000 A CN 201210309000A CN 102820233 B CN102820233 B CN 102820233B
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- China
- Prior art keywords
- power diode
- diode package
- packaging
- slice power
- slice
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The present invention discloses a kind of slice power diode package technique, comprise welding, plastic packaging, shaping, plating and automatically detect, lettering and packaging, slice power diode package design size is: 3.7mm*1.7 mm*1.0mm, and PN junction two-stage adopts copper base of frame plane pin process.Because copper framework heat-sinking capability is strong, normally can working in hot environment for a long time, simultaneously in reduction of device encapsulation volume situation, by reducing the thermal resistance of device, improve the heat dispersion of device self.In addition, the microminiature volume of packaging appearance and ultrathin element height, the slotting subsides realizing pcb board under more conveniently can being applied in the occasion of limited space load in mixture design, improve the parts density of unit are machine product is done less thinner.
Description
Technical field
The present invention relates to a kind of semiconductor packaging process, particularly relate to a kind of slice power diode package technique.
Background technology
Power-type diode mainly comprises Schottky diode, fast recovery diode and power frequency diode etc.Compact along with electronic product, based on the power diode of components and parts, also start the trend of miniaturization, integrated, high frequency.At present, green illumination electronic integrated ballast major part uses specification to be the plug-in type power diode of 1A, this be present stage plug-in type power diode can accomplish the minimum profile of 1A specification, by the utilization that green illumination manufacturer is a large amount of.Along with the deep development of green illumination miniaturization of electronic products, market is improving constantly the requirement of power diode, and the product of prior art design cannot meet the needs of its skill upgrading and product up-gradation.
In green illumination field, the plug-in type power diode of specification 1A, 1000V is current most widely used product, due to the limitation of silicon rubber passivation technology, its design work junction temperature is less than 125 DEG C, under electronic integrated ballast hot environment, its chip is in critical and break bounds limit operating state, brings hidden danger to the stability of product and fail safe.The characteristic restriction of plug-in type packaging technology, the specification of 1A has been the minimum specification of plug-in unit power diode volume, cannot meet the demand for development that green illumination product is miniaturized further.Meanwhile, on assembly technology, plug-in type power diode mainly relies on handwork, is unfavorable for that loading in mixture Design and implementation full-automatic mechanical flowing water equipment to the slotting subsides of pcb board enhances productivity.
In view of this, the present inventor studies this, and develop a kind of slice power diode package technique specially, this case produces thus.
Summary of the invention
The object of this invention is to provide a kind of good heat dissipation, the slice power diode package technique that high temperature resistant, apparent size is little.
To achieve these goals, solution of the present invention is:
A kind of slice power diode package technique, comprise welding, plastic packaging, shaping, plating and automatically detect, lettering and packaging, slice power diode package design size is: 3.7 mm * 1.7 mm * 1.0mm, and PN junction two-stage adopts copper base of frame plane pin process.
Described slice power diode is flat pin, two pins spacing 1.7mm ~ 1.8mm.
Described slice power diode topside area is (2.5 ± 0.05) mm*(1.8 ± 0.05) mm.
The present invention adopts copper base of frame plane pin process, because copper framework heat-sinking capability is strong, can normally work in hot environment for a long time, simultaneously in reduction of device encapsulation volume situation, by reducing the thermal resistance of device, improves the heat dispersion of device self.In addition, the microminiature volume of packaging appearance and ultrathin element height, the slotting subsides realizing pcb board under more conveniently can being applied in the occasion of limited space load in mixture design, improve the parts density of unit are machine product is done less thinner.
Below in conjunction with specific embodiment, the present invention is described in further detail.
Embodiment
embodiment 1
A kind of slice power diode package technique, comprise welding, plastic packaging, shaping, plating and automatically detect, lettering and packaging, slice power diode package design size is: 3.7 mm * 1.7 mm * 1.0mm, and PN junction two-stage adopts copper base of frame plane pin process.
Described slice power diode is flat pin, two pins spacing 1.7mm.For avoiding testing central spark phenomenon, require that the push rod of bottom device adopts insulating material.
Described slice power diode topside area is 2.45mm*1.75mm.By improving positioning precision, laser engraving product identification is carried out to this region.
Copper size lead frame conventional is in the market 0.20MM specification, owing to being subject to body height restriction, considers to adopt thickness to be the copper lead frame of the 0.15mm of most Thin Specs.The lead frame that 20cm is long, most of producer chip loading standard is 50.Adopt packaging technology of the present invention, the number loaded can have been brought up to 72, effectively raise utilance and the operating efficiency of material, reduce product cost.
embodiment 2
A kind of slice power diode package technique, comprise welding, plastic packaging, shaping, plating and automatically detect, lettering and packaging, slice power diode package design size is: 3.7 mm * 1.7 mm * 1.0mm, and PN junction two-stage adopts copper base of frame plane pin process.
Described slice power diode is flat pin, two pins spacing 1.8mm.For avoiding testing central spark phenomenon, require that the push rod of bottom device adopts insulating material.
Described slice power diode topside area is 2.55mm*1.85mm.By improving positioning precision, laser engraving product identification is carried out to this region.
Copper size lead frame conventional is in the market 0.20MM specification, owing to being subject to body height restriction, considers to adopt thickness to be the copper lead frame of the 0.15mm of most Thin Specs.The lead frame that 20cm is long, most of producer chip loading standard is 50.Adopt packaging technology of the present invention, the number loaded can have been brought up to 72, effectively raise utilance and the operating efficiency of material, reduce product cost.
Claims (1)
1. a slice power diode package technique, comprise welding, plastic packaging, shaping, plating and automatically detect, lettering and packaging, it is characterized in that: slice power diode package design size is: 3.7 mm * 1.7 mm * 1.0mm, PN junction two-stage adopts copper base of frame plane pin process;
Described slice power diode is flat pin, two pins spacing 1.7mm ~ 1.8mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210309000.0A CN102820233B (en) | 2012-08-28 | 2012-08-28 | A kind of slice power diode package technique |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210309000.0A CN102820233B (en) | 2012-08-28 | 2012-08-28 | A kind of slice power diode package technique |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102820233A CN102820233A (en) | 2012-12-12 |
| CN102820233B true CN102820233B (en) | 2015-07-29 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210309000.0A Expired - Fee Related CN102820233B (en) | 2012-08-28 | 2012-08-28 | A kind of slice power diode package technique |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102820233B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201117652Y (en) * | 2007-07-11 | 2008-09-17 | 林茂昌 | Diode |
| CN201191607Y (en) * | 2008-04-29 | 2009-02-04 | 常州唐龙电子有限公司 | SMA patch diode |
| US8120153B1 (en) * | 2005-09-16 | 2012-02-21 | University Of Central Florida Research Foundation, Inc. | High-temperature, wirebondless, injection-molded, ultra-compact hybrid power module |
| CN202167479U (en) * | 2011-07-27 | 2012-03-14 | 上海金克半导体设备有限公司 | Surface mount type diode improved structure |
| CN202332968U (en) * | 2011-12-02 | 2012-07-11 | 重庆平伟实业股份有限公司 | Ultrahigh-voltage patch diode |
-
2012
- 2012-08-28 CN CN201210309000.0A patent/CN102820233B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8120153B1 (en) * | 2005-09-16 | 2012-02-21 | University Of Central Florida Research Foundation, Inc. | High-temperature, wirebondless, injection-molded, ultra-compact hybrid power module |
| CN201117652Y (en) * | 2007-07-11 | 2008-09-17 | 林茂昌 | Diode |
| CN201191607Y (en) * | 2008-04-29 | 2009-02-04 | 常州唐龙电子有限公司 | SMA patch diode |
| CN202167479U (en) * | 2011-07-27 | 2012-03-14 | 上海金克半导体设备有限公司 | Surface mount type diode improved structure |
| CN202332968U (en) * | 2011-12-02 | 2012-07-11 | 重庆平伟实业股份有限公司 | Ultrahigh-voltage patch diode |
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| Publication number | Publication date |
|---|---|
| CN102820233A (en) | 2012-12-12 |
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Granted publication date: 20150729 Termination date: 20180828 |
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| CF01 | Termination of patent right due to non-payment of annual fee |