CN102820206A - Heat reflection device and semiconductor processing device - Google Patents
Heat reflection device and semiconductor processing device Download PDFInfo
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- CN102820206A CN102820206A CN2011101563467A CN201110156346A CN102820206A CN 102820206 A CN102820206 A CN 102820206A CN 2011101563467 A CN2011101563467 A CN 2011101563467A CN 201110156346 A CN201110156346 A CN 201110156346A CN 102820206 A CN102820206 A CN 102820206A
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- reflector means
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Abstract
The invention provides a heat reflection device which is used for a semiconductor processing device. The semiconductor processing device comprises a process chamber, the heat reflection device comprises at least one heat reflection unit, each of the heat reflection units is provided with a reflection face which can reflect heat, and the heat reflection device is arranged on the periphery of the process chamber and is used for reflecting the heat towards the process chamber. The invention also provides the semiconductor processing device. The heat reflection device is arranged on the periphery of the process chamber of the semiconductor processing device. By the aid of the heat reflection device and the semiconductor processing device having the heat reflection device, the radiant heat is reflected towards the process chamber, so that losses of the radiant heat are avoided, the temperature of the process chamber is increased quickly during warming of the process chamber, the temperature inside the process chamber is kept constant generally during heat preservation of the process chamber, the production efficiency is improved, and energy sources are saved.
Description
Technical field
The invention belongs to the semiconductor processing techniques field, be specifically related to a kind of semiconductor processing equipment that is used for the heat reflector means of semiconductor processing equipment and uses this heat reflector means.
Background technology
Along with the development of technology, chemical vapor-phase growing (Chemical Vapor Deposition abbreviates CVD as) technology has obtained increasing application at present.Wherein Organometallic Chemistry vapor phase growth (Metal Organic Chemical Vapor Deposition particularly; Abbreviate MOCVD as) technology, because of having advantages such as the easy control of film coating composition, plated film even compact and adhesive force are good, it becomes the main coating technique of industrial quarters gradually.So-called MOCVD technology is meant; Utilize metallo-organic compound (Metal Organic; Abbreviate MO as) as a kind of chemical vapor-phase growing technology of source material, its principle makes film growth for making organic metal unstrpped gas, hydrogenated gas or halogenation gas carry out pyrolysis in gas phase.In actual process, the equipment that will carry out above-mentioned CVD reaction is called CVD equipment; The equipment that uses MO gas to carry out the CVD reaction is called MOCVD equipment.
Usually, in the processing chamber of MOCVD equipment, be provided with the pallet apparatus that is used to carry processed substrate, be outside equipped with induction heater at processing chamber, temperature required processing chamber is heated to technology.In actual process; Can be delivered to processing chamber by the part in the heat that induction heater produced; Meanwhile, also can around induction heater, lose by some heat, like this; Not only can make the processing chamber arrival temperature required overlong time of technology and cause production efficiency low, and can cause waste because of heat loses in vain.And,, just need to continue to open induction heater, and this can cause waste of electric energy in order to compensate the heat that loses.
Summary of the invention
For solving the problems of the technologies described above; The present invention provides a kind of heat reflector means; It can scatter and disappear towards the processing chamber reflection heat in processing chamber intensification or insulating process with block heat; Not only can in the processing chamber temperature-rise period, improve its programming rate like this and then enhance productivity, but also can in the processing chamber insulating process, reduce scattering and disappearing of heat in the chamber, thereby energy savings, avoid waste.
For addressing the above problem; The present invention also provides a kind of semiconductor processing equipment with above-mentioned heat reflector means; It can scatter and disappear towards the processing chamber reflection heat in processing chamber intensification or insulating process equally with block heat, thereby enhances productivity, avoids energy waste.
For this reason; The present invention provides a kind of heat reflector means that is used for semiconductor processing equipment; Said semiconductor processing equipment comprises processing chamber, and said heat reflector means comprises at least one heat reflection unit, but each heat reflection unit all has the reflecting surface of reflecting heat; Said heat reflector means is arranged on the periphery of said processing chamber, in order to heat is reflected towards processing chamber.
Wherein, Heat reflector means provided by the invention also comprises the evolution unit; Said evolution unit links to each other with said heat reflection unit and can drive said heat reflection unit motion; So that processing chamber heat up or insulating process in, the reflecting surface that makes the heat reflection unit towards processing chamber with to its reflecting heat; And in the processing chamber temperature-fall period, make the reflecting surface of heat reflection unit depart from said processing chamber so that the processing chamber heat radiation.
Wherein, said evolution unit comprises lowering or hoisting gear, its through the reflecting surface that drives the motion of said heat reflection unit in the vertical direction and make said heat reflection unit towards or depart from said processing chamber.
Wherein, the quantity of said heat reflection unit is at least 2, and said evolution unit comprises tumbler, its through the reflecting surface that drives said heat reflection unit rotational certain angle and make said heat reflection unit towards or depart from said processing chamber.
Wherein, the quantity of said heat reflection unit is 2n, and said tumbler comprises n pivot that is used to settle said heat reflection unit, and wherein, n is the integer more than or equal to 1; For each pivot, be in its both sides and all be arranged on this pivot with two heat reflection unit of its next-door neighbour and can be around this pivoted so that the reflecting surface of said heat reflection unit according to technological requirement and towards or depart from said processing chamber.
Wherein, the quantity of said heat reflection unit is m, and said tumbler comprises m pivot that is used to settle said heat reflection unit, and wherein, m is the integer more than or equal to 2; Said m heat reflection unit is corresponding one by one with a said m pivot; Each said heat reflection unit all is fixed on the corresponding with it pivot and can together rotates with this pivot; Perhaps each said heat reflection unit all is arranged on the with it corresponding pivot and can be around this pivoted so that the reflecting surface of said heat reflection unit according to technological requirement and towards or depart from said processing chamber.
Wherein, in processing chamber intensification or insulating process, the reflecting surface of said heat reflection unit extends along the tangential direction of said processing chamber; In the processing chamber temperature-fall period, the reflecting surface of said heat reflection unit extends along the normal direction of said processing chamber.
Wherein, said tumbler comprises rotary driving source, and each said heat reflection unit all connects said rotary driving source, and under the drive of said rotary driving source, rotates.
Wherein, In said tumbler; Be provided with the rotation transfer part corresponding to each said heat reflection unit, said rotation transfer part is connected between said rotary driving source and the heat reflection unit, and the rotary driving force of said rotary driving source is delivered to said heat reflection unit.
Wherein, the quantity of said rotary driving source is one, and each said rotation transfer part all links to each other with this rotary driving source, and the rotary driving force of this rotary driving source is delivered to each said heat reflection unit.
Wherein, the tolerable temperature of said heat reflection unit is 1500 ℃, and each said heat reflection unit includes a determining deviation at interval and k thermal radiation speculum being provided with, and wherein, k is the integer more than or equal to 2.
Wherein, said thermal radiation speculum is processed by copper coin, aluminium sheet, steel plate or silver plate.
Wherein, said thermal radiation speculum is made up of substrate and the reflectance coating that is positioned at substrate surface.
Wherein, the substrate of said thermal radiation speculum comprises copper coin, aluminium sheet, steel plate or silver plate, and said reflectance coating is the coat of metal or metal coating.
In addition, the present invention also provides a kind of semiconductor processing equipment, and it comprises processing chamber, and is equipped with above-mentioned heat reflector means provided by the invention in the outer periphery of said processing chamber, in order to towards said processing chamber reflecting heat.
Wherein, be outside equipped with at said processing chamber and be used for induction heater that processing chamber is heated, said heat reflector means is arranged on the periphery of said induction heater, in order to heat is reflected towards processing chamber.
Wherein, in said processing chamber, be provided with the pallet apparatus that is used to carry processed substrate.
Wherein, said semiconductor processing equipment is the crystalline film grower, and said pallet apparatus comprises the pallet of a plurality of range upon range of settings, and has a determining deviation between the adjacent trays.
Wherein, said a plurality of pallet is along the vertical range upon range of setting of said processing chamber short transverse.
The present invention has following beneficial effect:
Because but heat reflector means provided by the invention can be arranged on the peripheral of processing chamber and have the reflecting surface of reflecting heat, thereby, can radiant heat be reflected towards processing chamber by this heat reflector means.Like this; In the processing chamber temperature-rise period, not only can reduce heat dissipation, avoid energy waste, and because the heat that this heat reflector means reflects also is used for the heating of processing chamber; Thereby can improve the programming rate of processing chamber, and then enhance productivity; Likewise; In the processing chamber insulating process; Also can reduce scattering and disappearing of heat in the chamber by this heat reflector means,, thereby practice thrift the energy, avoided waste so that in the temperature in the chamber being remained on the scope that needs and need not to continue to open induction heater energy is provided.
In a preferred embodiment of the invention; Owing to also be provided with the evolution unit that can drive the heat reflection unit motion in the heat reflector means; Thereby can be in processing chamber intensification or insulating process; Make reflecting surface and processing chamber and/or the induction heater of heat reflection unit relative, so that radiant heat is reflected towards processing chamber, thereby can avoid processing chamber heat up or insulating process in heat lost in vain and cause energy waste; But also can improve the programming rate of processing chamber, and then enhance productivity.And in the processing chamber temperature-fall period, make the reflecting surface of heat reflection unit depart from processing chamber and/or induction heater, thereby be convenient to the processing chamber heat radiation.That is to say that the heat reflector means that present embodiment provides can be rapidly heated it, and in the processing chamber insulating process, avoid heat dissipation, and in processing chamber heat radiation process, can not stop its heat radiation in the processing chamber temperature-rise period.This shows that the heat reflector means that present embodiment provides not only can energy savings, but also can enhance productivity.
Similarly, because semiconductor processing equipment provided by the invention includes above-mentioned heat reflector means provided by the invention, thereby it can avoid energy waste equally, improves the programming rate of processing chamber and and then enhances productivity.
Description of drawings
The vertical view of the heat reflector means that Fig. 1 provides for specific embodiment of the present invention;
Fig. 2 a is the structural representation of the heat reflection unit that heat reflector means shown in Figure 1 adopted;
Fig. 2 b is the vertical view of heat reflection unit shown in Fig. 2 a;
The generalized section of the basic structure of the semiconductor processing equipment that is provided with heat reflector means shown in Figure 1 that Fig. 3 provides for specific embodiment of the present invention; And
Fig. 4 is the vertical view after semiconductor processing equipment shown in Figure 3 is removed filtering chamber 318.
Embodiment
Technological core of the present invention provides a kind of heat reflector means; It can be applicable to comprise the semiconductor processing equipment of processing chamber; Said heat reflector means comprises at least one heat reflection unit; But each heat reflection unit all has the reflecting surface of reflecting heat, and said heat reflector means is arranged on the periphery of said processing chamber, in order to heat is reflected towards processing chamber.Preferably; Specific embodiment of the present invention also provides a kind of heat reflector means that is provided with the evolution unit, and wherein, this evolution unit links to each other with the heat reflection unit and can drive the heat reflection unit motion; So that regulate heat to the processing chamber reflection; Particularly, processing chamber heat up or insulating process in, the reflecting surface that makes the heat reflection unit towards processing chamber with to this processing chamber reflecting heat; And in the processing chamber temperature-fall period, make the reflecting surface of heat reflection unit depart from processing chamber so that this processing chamber heat radiation.
The vertical view of the heat reflector means that Fig. 1 provides for specific embodiment of the present invention; Fig. 2 a is the structural representation of the heat reflection unit that heat reflector means shown in Figure 1 adopted; Fig. 2 b is the vertical view of heat reflection unit shown in Fig. 2 a.Please consult Fig. 1, Fig. 2 a and Fig. 2 b in the lump, the heat reflector means 600 that present embodiment provides comprises 13 heat reflection unit 604 and the evolution unit that contains pivot 601 that is attached thereto.
In the present embodiment; Each heat reflection unit 604 includes 4 thermal radiation speculums 602 that are successively set on the pivot 601; Adjacent two thermal radiation speculums 602 are at regular intervals at interval, but and each thermal radiation speculum 602 all have the reflecting surface of at least one reflecting heat.
Wherein, the body of thermal radiation speculum 602 and reflecting surface thereof can be by one-body molded such as the metal material with thermal radiation reflecting properties of copper coin, aluminium sheet, steel plate or silver plate etc.Certainly; Also can make thermal radiation speculum 602 like this: promptly; Employing can tolerate the temperature required material of semiconductor processes and process substrate; And the metal coating or the coat of metal that can satisfy the technological temperature requirement equally and have the thermal radiation reflecting properties is set at this substrate surface, to form the reflecting surface of thermal radiation speculum 602.Wherein, substrate can adopt copper coin, aluminium sheet, steel plate or other can tolerate the temperature required material of semiconductor processes; And coating or coating can be the coating or the coating of metal materials such as gold, silver, also can be coating or the coatings with metallic compound of thermal radiation reflecting properties.Because thermal radiation speculum body or the reflectance coating on it are that metal material is processed; Therefore, flow through and a plurality of discontinuous thermal radiation speculums need be set in a heat reflection unit for fear of induced current, promptly; Make two adjacent thermal radiation mirror separation one determining deviations, shown in Fig. 2 a.
It is pointed out that in actual process temperature that heat reflector means 600 tolerated and the material that for this reason adopts should be decided according to the actual conditions of semiconductor processes.For example, for the crystalline film growth technique, the scope of its technological temperature is 500～1400 ℃, thereby the tolerable temperature of this heat reflector means should be more than 1400 ℃, for example is 1400 ℃, 1450 ℃ or 1500 ℃.
In the present embodiment, the evolution unit is a tumbler, its through the reflecting surface that drives heat reflection unit rotational certain angle and make the heat reflection unit towards or depart from processing chamber.As shown in the figure, tumbler mainly comprises: pivot 601, and it is used for fixing heat reflection unit 604, and can drive this heat reflection unit 604 rotations; Rotary driving source 610, it is used to heat reflection unit 604 rotary driving force is provided; Rotate transfer part 603, it is connected between pivot 601 and the rotary driving source 610, transmits towards pivot 601 in order to the rotary driving force of spinning in future drive source 610; And the related portion 605 that links, its rotation transfer part 603 with each heat reflection unit 604 links together, to realize the interlock of each heat reflection unit 604.
Particularly; Can realize the interlock of each heat reflection unit 604 like this; That is, make an end of the rotation transfer part 603 of each heat reflection unit 604 connect pivot 601 separately, and make its other end together be connected to rotary driving source 610 via the related portion 605 of interlock.Like this; As long as this rotary driving source 610 to this link related portion 605 or to wherein any one rotate transfer part 603 and apply and make it clockwise or the power that rotates counterclockwise; Just can drive these 13 simultaneously and rotate transfer part 603 together clockwise or rotate counterclockwise; And then drive heat reflection unit 604 rotations that are attached thereto and change its position, thereby realized the interlock of each heat reflection unit 604.
The way of realization of related portion 605 of linking can be for being connected hard link such as the metal bar that respectively rotates between the transfer part 603, ceramic rod, can rotate by means of such interlock association portion 605 and realize hard connection between the transfer part 603 at each.Certainly, the related portion 605 that links also can be preferably not rubber-like cable for rotating the cable that transfer part 603 links to each other with each, can rotate by means of such interlock association portion 605 and realize between the transfer part 603 being flexible coupling at each.Above-mentionedly be flexible coupling during mode when adopting; Each pivot 601 should dispose the elastic reseting part such as back-moving spring etc.; Like this; When rotary driving source 610 no longer apply make heat reflection unit 604 depart from its initial position depart from power the time, each pivot 601 can drive each heat reflection unit 604 by its back-moving spring and return back to initial position.As for aforementioned hard connecting mode, do not require that then each pivot 601 must the above-mentioned elastic reseting part of configuration.
Certainly, in practical application, the rotation transfer part 603 of each heat reflection unit 604 can not link together yet, but links to each other with same rotary driving source 610 separately, is delivered to each heat reflection unit 604 with the rotary driving force with rotary driving source 610; Perhaps, the rotation transfer part 603 of each heat reflection unit 604 is linked to each other respectively with different rotary driving sources 610, be delivered to each corresponding heat reflection unit 604 respectively with rotary driving force with each rotary driving source 610.Be appreciated that; Such connected mode can make structure become complicated and causes cost to increase for embodiment illustrated in fig. 1, also is difficult to guarantee the concertedness of each heat reflection unit 604 work simultaneously; Thereby, preferred connected mode shown in Figure 1 in practical application.
In addition; Need to prove; In the tumbler that present embodiment adopts; Be provided with the rotation transfer part 603 that connects rotary driving source 610 corresponding to each heat reflection unit 604, the rotary driving force of the drive source of spinning in the future 610 is delivered to said heat reflection unit 604 by means of this rotation transfer part 603.This rotation transfer part 603 can be arranged on the pivot 601, so as through this rotation transfer part 603 in the future the rotating drive power of spinning drive source 610 be delivered to pivot 601, and drive heat reflection unit 604 by this pivot 601 and rotate and change its position.Certainly; This rotation transfer part 603 also can be arranged on the heat reflection unit 604; So that the rotating drive power through this rotation transfer part 603 drive sources of spinning in the future 610 is delivered to said heat reflection unit 604, and directly drive this heat reflection unit 603 around or in company with pivot 601 rotate and change towards.
Further it is to be noted; Although the quantity of the heat reflection unit in the previous embodiment is 13, yet in practical application, the quantity of heat reflection unit is not limited thereto; But also can be other quantity; For example, the quantity of heat reflection unit can be merely 1, perhaps more than 2 or 2.And the quantity of the thermal radiation speculum that each heat reflection unit is comprised is not limited to described 4 of previous embodiment, but can be k, and wherein, k is the integer more than or equal to 2.
In practical application, when the quantity of heat reflection unit was merely 1, this heat reflection unit can be set to tubular.In processing chamber heating or insulating process, the heat reflection unit of this tubular is enclosed within outside the processing chamber, so that heat is reflected towards processing chamber; And in the processing chamber temperature-fall period, by means of make this heat reflection unit in the vertical direction motion (rise or descend) such as the evolution unit of lowering or hoisting gear, so that this heat reflection unit breaks away from processing chamber zone and is that processing chamber is reserved heat dissipation channel.
When the quantity of heat reflection unit more than or equal to 2 the time, the evolution unit can comprise tumbler.Drive heat reflection unit rotational certain angle by means of this tumbler, so as the reflecting surface that makes the heat reflection unit according to arts demand towards or depart from processing chamber.And the pivot quantity in the evolution unit can equate that for example, the quantity of heat reflection unit is m with the quantity of heat reflection unit, correspondingly, is used to settle the quantity of the pivot of heat reflection unit also to be m in the tumbler, and wherein, m is the integer more than or equal to 2.M heat reflection unit is corresponding one by one with m pivot, so each heat reflection unit all is arranged on the with it corresponding pivot and can be around this pivoted so that the reflecting surface of this heat reflection unit according to arts demand and towards or depart from processing chamber; Perhaps, each heat reflection unit all is fixed on the with it corresponding pivot and can together rotates with this pivot so that the reflecting surface of heat reflection unit according to technological requirement and towards or depart from processing chamber.
Certainly, the pivot quantity in the evolution unit and the quantity of heat reflection unit can not wait yet, for example; Quantity that can the heat reflection unit is set to 2n; And be used to settle the pivot of heat reflection unit to be set to n in the tumbler, wherein, n is the integer more than or equal to 1.Like this, for each pivot, be in its both sides and all be arranged on this pivot with two heat reflection unit of its next-door neighbour and can be around this pivot rotation so that the reflecting surface of heat reflection unit according to arts demand and towards or depart from processing chamber.
It is understandable that heat reflector means provided by the invention also can not be provided with the evolution unit, but the heat reflection unit is fixed in the periphery of processing chamber, and make its reflecting surface all the time towards processing chamber.Certainly, adopt this mode that processing chamber is lowered the temperature in temperature-fall period slowly.
It will also be appreciated that; In processing chamber intensification or insulating process, if the reflecting surface of heat reflection unit is extended along the tangential direction of processing chamber, promptly; Make the reflecting surface of heat reflection unit vertical with the normal direction of processing chamber, then the heat reflection unit should be maximum to the heat of processing chamber reflection.In the processing chamber temperature-fall period; If the reflecting surface of heat reflection unit is extended along the normal direction of processing chamber; Then the heat reflection unit should be minimum to the heat of processing chamber reflection; And this set mode is the heat dissipation channel maximum that processing chamber is reserved, and should help the processing chamber quick heat radiating most.
In addition; Although its evolution is realized through the mode of rotation in the heat reflection unit 604 in the present embodiment; That is, the reflecting surface that the mode through rotation makes heat reflection unit 604 towards or depart from processing chamber, yet in practical application; Also can move by means of the lowering or hoisting gear in the vertical direction drives heat reflection unit 604 and rises or descend, and make heat reflection unit 604 towards or depart from processing chamber; Perhaps drive heat reflection unit 604 and flip an angle by means of turning device, and make heat reflection unit 604 towards or depart from processing chamber.For example, in processing chamber intensification or insulating process, make heat reflection unit 604 towards induction heater and processing chamber; And in the processing chamber temperature-fall period, each heat reflection unit 604 rise is broken away from processing chamber through lowering or hoisting gear, dispel the heat for processing chamber thereby reserve the heat dissipation passage.For another example; Upper area or the lower zone outside at processing chamber are provided with trip shaft; And heat reflection unit 604 is arranged on the trip shaft; By means of the flip-flop movement of heat reflection unit 604 around trip shaft, and in processing chamber intensification or insulating process, the reflecting surface that makes heat reflection unit 604 is towards induction heater and processing chamber; And in the processing chamber temperature-fall period, make the reflecting surface of heat reflection unit 604 depart from processing chamber, supply the processing chamber heat radiation to reserve the heat dissipation passage.Certainly, in practical application, the evolution unit need not be confined to aforementioned way of realization, in fact, every reflecting surface that can make heat reflection unit 604 according to arts demand and towards or depart from the mode of processing chamber, just can adopt.
The generalized section of the basic structure of the semiconductor processing equipment that is provided with heat reflector means shown in Figure 1 that Fig. 3 provides for specific embodiment of the present invention; Fig. 4 is the vertical view after semiconductor processing equipment shown in Figure 3 is removed filtering chamber 318.Specify the semiconductor processing equipment that is provided with heat reflector means provided by the invention below in conjunction with Fig. 3 and Fig. 4.
Like Fig. 3 and shown in Figure 4, the semiconductor processing equipment that present embodiment provides comprises: semiconductor processing device 300 and above-mentioned heat reflector means 600 provided by the invention.
Wherein, semiconductor processing device 300 comprise the chamber outer wall 321 that is used to cut off atmosphere, chamber inner wall 317 and by chamber inner wall 317 around the processing chamber 301 that forms.In the present embodiment, chamber inner wall 317 is processed by graphite, and its surface is coated by SiC, and certainly in practical application, it also can be processed by quartz.
Be useful on the pallet apparatus that carries processed substrate 302 in processing chamber 301 set inside.This pallet apparatus comprises along the longitudinal direction 11 pallets that the short transverse of processing chamber 301 (that is, along) sets gradually from bottom to top.Each pallet all ringwise, wherein annular entity part can be used for carrying the workpiece to be machined such as substrate etc., annular entity part is around forming hollow space.Each pallet is processed by graphite and the surface is coated by SiC, has certain spacing between the adjacent trays, and for example 0.5cm～8cm is preferably 1cm～3cm.
In processing chamber 301 set inside process gas conveying system 310 is arranged, this process gas conveying system 310 can be processed by quartz material, and it runs through whole pallet apparatus from bottom to top.On process gas conveying system 310, be provided with process gas outlet 311, in order to the process gas in the process gas conveying system 310 is incorporated into the surface of each pallet corresponding to the upper surface that is in 9 middle pallets of pallet apparatus.In process gas conveying system 310, be provided with in order to process gas is incorporated into the process gas main pipe 313 in the process gas conveying system 310 from the outside; Because the length of process gas main pipe 313 is longer; Thereby gas output that make to lean on last process gas outlet 311 tends to export 311 gas output greater than the process gas under leaning on; This just need be provided with process gas compensating pipe 314, in order to the conveying capacity of compensate for process gas main pipe 313.Like this, owing to be provided with process gas compensating pipe 314, thereby can control the process gas conveying capacity at different tray surfaces place, so that the process gas scale of construction at each tray surface place is roughly balanced.Certainly, in practical application, the quantity of process gas main pipe 313 and process gas compensating pipe 314 can need not be confined to above-mentioned quantity, but can increase as required or reduce.
Be provided with load coil 304 around chamber outer wall 321, the pallet apparatus in the processing chamber 301 heated, so that the processed substrate 302 that it carried is in technology is temperature required in order to mode through induction heating.Usually; In pallet apparatus, the heat at bottom pallet and place, top layer pallet position is easy to scatter and disappear, therefore in order to ensure the temperature field evenly; And be provided with the two ends of load coil 304 closeer, thereby more heat is provided to bottom pallet and top layer pallet.Certainly, in practical application, the situation that is provided with of load coil 304 can be set according to the actual process needs, and need not be confined to the described form of present embodiment.
Shown in 3 figure; In order to guarantee that further processed substrate 302 can be in even temperature field and airflow field; Can be only place substrate 302 at the upper surface of 9 pallets between bottom pallet and top layer pallet; And make and be positioned at as the setoff pallet and not carrying substrates of bottom pallet and top layer pallet, like this, can stop the heat radiation of whole pallet apparatus by means of these two setoff pallets; Thereby 9 pallets to mediating are incubated, and are even to guarantee these 9 pallets and substrate 302 temperature fields of living in of being carried thereof.In fact, as long as the pallet that the tray number in the pallet apparatus when be four or more, is in the top layer and the bottom just can carrying substrates and be set to serve as a contrast or foil pallet specially, in order to guarantee the even of temperature field.
In addition; In the semiconductor processing device 300 that present embodiment adopted; Above processing chamber 301, be provided with filtering chamber 318; And be provided with chamber exhaust outlet 322 in substantial middle position, the top of this filtering chamber 318, purge gas and unreacted process gas are discharged from via this exhaust outlet 322.This filtering chamber 318 is made up of multiple filtration substrate 324, on each laminar substrate 324, all offers some through holes 319.Like this; Unreacted process gas just can enter into filtering chamber 318 via the through hole on the bottom filter substrate 324 319 in the processing chamber 301; In filtering chamber 318, spread, and on filter substrate 324, carry out crystalline growth, so that consume unreacted process gas.Because unreacted process gas can be grown to the crystalline film of difficult drop-off rather than the particle that is easy to come off in filtering chamber 318, thereby can reduce even avoid the pollution that brings because of particle by this filtering chamber 318; Simultaneously; Because unreacted process gas can be consumed in filtering chamber 318 comparatively fully; Thereby can suppress unreacted process gas and arrive the gas extraction system that comprises exhaust outlet 322 and adhere to product within it; Thereby can reduce this crystalline film grower because of the preventive maintenance time that this pollution brought, and then correspondingly prolong its uptime.
In the present embodiment, outside semiconductor processing device 300, be provided with heat reflector means 600 provided by the invention.Particularly; Heat reflector means 600 is looped around the periphery of induction heater 304; By means of rotary driving source 610 wherein each heat reflection unit 604 is rotated, thereby change the position relation of each heat reflection unit 604 and processing chamber 301 and/or induction heater 304, for example; Driving heat reflection unit 604 through rotary driving source 610 rotates; And in processing chamber 301 intensifications or insulating process, the reflecting surface that makes heat reflection unit 604 is towards processing chamber 301, thereby the feasible heat that is come out by induction heater 304 and/or processing chamber 301 inside is reflexed to processing chamber 301 by this heat reflector means 600 when arriving heat reflector means 600; In processing chamber 301 heat radiation processes, make the reflecting surface of heat reflection unit 604 depart from processing chamber 301, supply processing chamber 301 heat radiations to reserve the heat dissipation passage.
In the semiconductor processing equipment that present embodiment provides; Because the outer periphery of induction heater 304 is equipped with above-mentioned heat reflector means 600 provided by the invention; And the reflecting surface that the heat reflection unit 604 in this heat reflector means 600 can make himself according to arts demand towards or depart from processing chamber 301; Thereby; Semiconductor processing equipment provided by the invention not only can make the technological temperature fast lifting in the chamber in processing chamber 301 temperature-rise periods, in processing chamber 301 insulating processes, make the technological temperature in the chamber keep constant basically, but also can in processing chamber 301 heat radiation processes, make processing chamber 301 quick heat radiatings.That is to say that semiconductor processing equipment provided by the invention both can avoid heat to lose in vain, can in processing chamber 301 temperature-fall periods, realize the fast cooling of processing chamber 301 again in processing chamber 301 intensifications and insulating process.
It is understandable that; Although the heat reflector means in the previous embodiment is provided with around whole induction heater; Yet in practical application; Heat reflector means also can only be arranged on the subregion of induction heater, though the effect that this set mode prevents to dispel the heat also can be improved the problem of heat dissipation to a certain extent not as previous embodiment.And; Although the heat reflector means in the previous embodiment comprises a plurality of heat reflections unit; But in practical application, heat reflector means also can only comprise a heat reflection unit, and this heat reflection unit is cylindric so that induction heater is surrounded in it; And in order to guarantee that this heat reflection unit can realize evolution, and the evolution unit such as lowering or hoisting gear etc. is set correspondingly.
Will also be appreciated that in the semiconductor processing device that heat reflector means provided by the invention can be applied to heat by induction heater; The semiconductor processing device that also can be applied to only need be incubated and need not to heat (promptly; This semiconductor processing device is not provided with induction heater) in; At this moment; Can heat reflector means be set directly at the periphery of processing chamber,, thereby realize the insulation of processing chamber so that it can be with the radiant heat that passes out in the processing chamber again towards processing chamber reflection.
Illustrate below and how to utilize heat reflector means to come the temperature in the processing chamber is controlled in the crystalline film growth technique, wherein, each pallet carries 16 substrates.
At first, utilize 304 pairs of processing chambers 301 of induction heater to heat, feed the hydrogen of 10SLM simultaneously from purge gas inlet 320, and feed the hydrogen of 20SLM respectively to processing chamber 301 from process gas main pipe 313 and process gas compensating pipe 314.After making temperature reach 1000 ℃ through heating, kept 5 minutes, so that the surface of substrate 302 is cleaned.
Then; Based on signal from rotary driving source 610; Make pivot 601 rotation and drive 602 motions of thermal radiation speculum, extend (that is, perpendicular to processing chamber) along the normal direction of processing chamber 301 until the reflecting surface of thermal radiation speculum 602; And the reflecting surface that makes this heat reflection unit departs from processing chamber zone and is that processing chamber is reserved heat dissipation channel, makes the processing chamber fast cooling whereby.
Afterwards, treat that the temperature in the chamber drops to 500 ℃, import ammonias from process gas main pipe 313 and process gas compensating pipe 314 respectively with the flow of 10SLM.Hydrogen with 300SCCM carries out bubbling to TMG, and imports 3 minutes in processing chamber via process gas main pipe 313 and process gas compensating pipe 314.In this operation, form noncrystalline layer.
Stop to import TMG, make 602 rotations of thermal radiation speculum once more, and make its reflecting surface towards processing chamber.Thus, owing to the heat that can efficiently processing chamber be given off reflects to this processing chamber, thereby can make the temperature in the chamber rise to the first required design temperature of technology, for example 1100 ℃ rapidly.
Then, import ammonias from process gas main pipe 313 and process gas compensating pipe 314 to processing chamber 301, and import nitrogen to processing chamber 301 with the flow of 5SLM with the flow of 25SLM.In this operation, with the hydrogen of 200SCCM TMG is carried out bubbling, and via process gas main pipe 313 with process gas compensating pipe 314 and in the introducing technology chamber 301.
Make the growth of GaN film after 1 hour; Stop introducing technology gas; And make thermal radiation speculum 602 rotation once more, change its towards and make its reflecting surface depart from processing chamber 301, to reserve the heat dissipation passage for processing chamber 301 heat radiations; And make processing chamber 301 be cooled to second design temperature, for example 750 ℃.
Then, in processing chamber 301, import TMG and TMIn, with growing InGaN film on the GaN film.
Then, stop to import hydrogen, utilize nitrogen to make processing chamber 301 return to room temperature and normal pressure, and substrate 302 is reclaimed and detects.Find that through detecting 64 substrates on 4 pallets are measured its thickness, and the fluctuation range of crystalline film thickness is in ± 3% on these substrates; 80 substrates on 5 pallets are measured its thickness, and the fluctuation range of these on-chip crystalline film thickness is in ± 6%.
This shows; The semiconductor processing equipment that present embodiment provides, owing to be equipped with above-mentioned heat reflector means provided by the invention in its processing chamber outer periphery, thereby can be by means of this heat reflector means in processing chamber intensification or insulating process; Radiant heat is reflected towards processing chamber; Thereby can avoid in processing chamber intensification or insulating process, heat being lost in vain and causing energy waste, improve the programming rate of processing chamber simultaneously, and then enhance productivity.And in the processing chamber temperature-fall period, make the reflecting surface of heat reflection unit depart from said induction heater, thereby be convenient to the processing chamber heat radiation.That is to say that the semiconductor processing equipment that present embodiment provides can be realized being rapidly heated, and in the processing chamber insulating process, avoid heat dissipation in the processing chamber temperature-rise period, and in the processing chamber temperature-fall period, be convenient to the processing chamber heat radiation.Therefore; The semiconductor processing equipment that adopts present embodiment to provide can make processing chamber reach needed temperature, promptly quickly and easily; Can control the temperature of processing chamber and process gas efficiently; Thereby can be efficiently in semiconductor processing equipment each pallet of pallet apparatus supply with the process gas of proper temperature, therefore improved the production efficiency of semiconductor processing equipment, and because process gas temperature is suitable; Thereby can reduce the inequality property of each processed on-chip crystalline film thickness greatly, thereby improve the quality of crystalline film.
It is understandable that above execution mode only is the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For the one of ordinary skilled in the art, under the situation that does not break away from spirit of the present invention and essence, can make various modification and improvement, these modification also are regarded as protection scope of the present invention with improving.
Claims (19)
1. heat reflector means that is used for semiconductor processing equipment; Said semiconductor processing equipment comprises processing chamber; It is characterized in that; Said heat reflector means comprises at least one heat reflection unit, but each heat reflection unit all has the reflecting surface of reflecting heat, and said heat reflector means is arranged on the periphery of said processing chamber.
2. heat reflector means as claimed in claim 1; It is characterized in that; Also comprise the evolution unit; Said evolution unit links to each other with said heat reflection unit and can drive said heat reflection unit motion, so as processing chamber heat up or insulating process in, the reflecting surface that makes the heat reflection unit towards processing chamber with to its reflecting heat; And in the processing chamber temperature-fall period, make the reflecting surface of heat reflection unit depart from said processing chamber so that the processing chamber heat radiation.
3. heat reflector means as claimed in claim 2; It is characterized in that; Said evolution unit comprises lowering or hoisting gear, its through the reflecting surface that drives the motion of said heat reflection unit in the vertical direction and make said heat reflection unit towards or depart from said processing chamber.
4. heat reflector means as claimed in claim 2; It is characterized in that; The quantity of said heat reflection unit is at least 2; And said evolution unit comprises tumbler, its through the reflecting surface that drives said heat reflection unit rotational certain angle and make said heat reflection unit towards or depart from said processing chamber.
5. heat reflector means as claimed in claim 4 is characterized in that, the quantity of said heat reflection unit is 2n, and said tumbler comprises n pivot that is used to settle said heat reflection unit, and wherein, n is the integer more than or equal to 1;
For each pivot, be in its both sides and all be arranged on this pivot with two heat reflection unit of its next-door neighbour and can be around this pivoted so that the reflecting surface of said heat reflection unit according to technological requirement and towards or depart from said processing chamber.
6. heat reflector means as claimed in claim 4 is characterized in that, the quantity of said heat reflection unit is m, and said tumbler comprises m pivot that is used to settle said heat reflection unit, and wherein, m is the integer more than or equal to 2;
Said m heat reflection unit is corresponding one by one with a said m pivot; Each said heat reflection unit all is fixed on the corresponding with it pivot and can together rotates with this pivot; Perhaps each said heat reflection unit all is arranged on the with it corresponding pivot and can be around this pivoted so that the reflecting surface of said heat reflection unit according to technological requirement and towards or depart from said processing chamber.
7. like any described heat reflector means among the claim 1-6, it is characterized in that in processing chamber intensification or insulating process, the reflecting surface of said heat reflection unit extends along the tangential direction of said processing chamber; In the processing chamber temperature-fall period, the reflecting surface of said heat reflection unit extends along the normal direction of said processing chamber.
8. like claim 5 or 6 described heat reflector means, it is characterized in that said tumbler comprises rotary driving source, each said heat reflection unit all connects said rotary driving source, and under the drive of said rotary driving source, rotates.
9. heat reflector means as claimed in claim 8; It is characterized in that; In said tumbler; Be provided with the rotation transfer part corresponding to each said heat reflection unit, said rotation transfer part is connected between said rotary driving source and the heat reflection unit, and the rotary driving force of said rotary driving source is delivered to said heat reflection unit.
10. heat reflector means as claimed in claim 9; It is characterized in that; The quantity of said rotary driving source is one, and each said rotation transfer part all links to each other with this rotary driving source, and the rotary driving force of this rotary driving source is delivered to each said heat reflection unit.
11. heat reflector means as claimed in claim 1; It is characterized in that the tolerable temperature of said heat reflection unit is 1500 ℃, and each said heat reflection unit includes a determining deviation at interval and k thermal radiation speculum being provided with; Wherein, k is the integer more than or equal to 2.
12. heat reflector means as claimed in claim 11 is characterized in that, said thermal radiation speculum is processed by copper coin, aluminium sheet, steel plate or silver plate.
13. heat reflector means as claimed in claim 11 is characterized in that, said thermal radiation speculum is made up of substrate and the reflectance coating that is positioned at substrate surface.
14. heat reflector means as claimed in claim 13 is characterized in that, the substrate of said thermal radiation speculum comprises copper coin, aluminium sheet, steel plate or silver plate, and said reflectance coating is the coat of metal or metal coating.
15. a semiconductor processing equipment, it comprises processing chamber, it is characterized in that any described heat reflector means in the outer periphery of said processing chamber is equipped with like claim 1-14.
16. semiconductor processing equipment as claimed in claim 15; It is characterized in that; Be outside equipped with at said processing chamber and be used for induction heater that processing chamber is heated, said heat reflector means is arranged on the periphery of said induction heater, in order to heat is reflected towards processing chamber.
17. semiconductor processing equipment as claimed in claim 16 is characterized in that, in said processing chamber, is provided with the pallet apparatus that is used to carry processed substrate.
18. semiconductor processing equipment as claimed in claim 17 is characterized in that, said semiconductor processing equipment is the crystalline film grower, and said pallet apparatus comprises the pallet of a plurality of range upon range of settings, and has a determining deviation between the adjacent trays.
19. semiconductor processing equipment as claimed in claim 18 is characterized in that, said a plurality of pallets are along the vertical range upon range of setting of said processing chamber short transverse.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110156346.7A CN102820206B (en) | 2011-06-10 | 2011-06-10 | Heat reflection device and semiconductor processing device |
| PCT/CN2011/082438 WO2012167565A1 (en) | 2011-06-10 | 2011-11-18 | Heat reflecting device and semiconductor processing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201110156346.7A CN102820206B (en) | 2011-06-10 | 2011-06-10 | Heat reflection device and semiconductor processing device |
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| CN102820206A true CN102820206A (en) | 2012-12-12 |
| CN102820206B CN102820206B (en) | 2015-02-25 |
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| WO (1) | WO2012167565A1 (en) |
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| CN106033734A (en) * | 2015-03-12 | 2016-10-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Heating chamber and semiconductor processing device |
| CN106282914A (en) * | 2015-05-15 | 2017-01-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Heating chamber and semiconductor processing equipment |
| CN107868942A (en) * | 2016-09-27 | 2018-04-03 | 北京北方华创微电子装备有限公司 | One kind goes to gas chamber and its removes gas method and semiconductor processing equipment |
| CN108754429A (en) * | 2018-08-28 | 2018-11-06 | 京东方科技集团股份有限公司 | A kind of evaporation source |
| CN109599351A (en) * | 2013-03-22 | 2019-04-09 | 应用材料公司 | Reflexive lining |
| CN111070846A (en) * | 2019-12-19 | 2020-04-28 | 安徽南澳地毯有限公司 | Dedicated hot melt dusting compounding machine of automotive carpet |
| WO2022218126A1 (en) * | 2021-04-14 | 2022-10-20 | 北京北方华创微电子装备有限公司 | Semiconductor heat treatment device |
| CN115547896A (en) * | 2022-11-29 | 2022-12-30 | 无锡邑文电子科技有限公司 | Non-water-cooling semiconductor wafer low-temperature treatment equipment |
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| US8778079B2 (en) | 2007-10-11 | 2014-07-15 | Valence Process Equipment, Inc. | Chemical vapor deposition reactor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109599351A (en) * | 2013-03-22 | 2019-04-09 | 应用材料公司 | Reflexive lining |
| CN106033734A (en) * | 2015-03-12 | 2016-10-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Heating chamber and semiconductor processing device |
| CN106033734B (en) * | 2015-03-12 | 2019-01-18 | 北京北方华创微电子装备有限公司 | Heating chamber and semiconductor processing equipment |
| CN106282914A (en) * | 2015-05-15 | 2017-01-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Heating chamber and semiconductor processing equipment |
| CN106282914B (en) * | 2015-05-15 | 2019-11-29 | 北京北方华创微电子装备有限公司 | Heating chamber and semiconductor processing equipment |
| CN107868942A (en) * | 2016-09-27 | 2018-04-03 | 北京北方华创微电子装备有限公司 | One kind goes to gas chamber and its removes gas method and semiconductor processing equipment |
| CN107868942B (en) * | 2016-09-27 | 2019-11-29 | 北京北方华创微电子装备有限公司 | One kind going to gas chamber and its removes gas method and semiconductor processing equipment |
| CN108754429A (en) * | 2018-08-28 | 2018-11-06 | 京东方科技集团股份有限公司 | A kind of evaporation source |
| CN111070846A (en) * | 2019-12-19 | 2020-04-28 | 安徽南澳地毯有限公司 | Dedicated hot melt dusting compounding machine of automotive carpet |
| WO2022218126A1 (en) * | 2021-04-14 | 2022-10-20 | 北京北方华创微电子装备有限公司 | Semiconductor heat treatment device |
| CN115547896A (en) * | 2022-11-29 | 2022-12-30 | 无锡邑文电子科技有限公司 | Non-water-cooling semiconductor wafer low-temperature treatment equipment |
| CN115547896B (en) * | 2022-11-29 | 2023-03-10 | 无锡邑文电子科技有限公司 | Non-water-cooling semiconductor wafer low-temperature processing equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102820206B (en) | 2015-02-25 |
| WO2012167565A1 (en) | 2012-12-13 |
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