KR102380523B1 - CVD reactor coated reflection layer for manufacturing polysilicon and manufacturing method thereof - Google Patents

Abstract

It is an object of the present invention to provide a CVD reactor in which a reflective coating film for polysilicon production is formed in order to reduce radiant heat loss generated from a high-temperature filament when polysilicon is manufactured by the Siemens CVD method. The CVD reactor with a reflective coating film for polysilicon production according to an embodiment of the present invention is formed in double or multiple layers on the inner surface of the bell jar in a CVD (chemical vapor deposition) reactor to absorb heat emitted from the heated rod filament. A reflective coating film that reflects into the inside of the ruler, wherein the reflective coating film is formed toward the inner space of the bell jar and reflects heat; and a buffer layer formed between the reflective coating layer and the inner surface of the bell jar. .

Description

CVD reactor coated reflection layer for manufacturing polysilicon and manufacturing method thereof

The present invention relates to a CVD reactor in which a reflective coating film for polysilicon manufacturing is formed for manufacturing polysilicon by Siemens chemical vapor deposition (CVD) method, and a manufacturing method thereof.

As is known, silicon is used as a raw material in the manufacture of semiconductors or solar cells. Accordingly, the demand for high-purity silicon suitable as a raw material for semiconductors or solar cells is increasing.

Silicon production using the Siemens method involves reacting metallic silicon with a reaction gas such as hydrogen chloride to vaporize it into a raw material gas containing a silicon-containing gas such as monosilane, disilane or trichlorosilane, and to remove impurities by refining it through a distillation process. .

Thereafter, a silicon-containing gas is introduced into the reaction chamber through the gas inlet while applying an electric current to the silicon rod. At this time, the surface of the silicon rod is heated by the applied current, and the injected gas is thermally decomposed and deposited on the heated silicon rod to generate silicon.

This Siemens method has a disadvantage in that power consumption is large because it is carried out at a very high temperature. A significant portion of power consumption is lost through radiation, convection, conduction, gas heating and heat of reaction. Among them, the radiant heat loss is known to reach the level of 40-50%. In order to overcome this, US Patent Publication No. 2011-0159214 reduces radiant heat loss by coating the CVD reactor with gold. However, since expensive gold is applied, the economic feasibility is low.

In addition, US Patent Publication No. 2015-0184290 reduces radiation energy loss by applying nitride, a metal that can secure economic feasibility compared to gold. However, metal nitride has a low adhesion with the CVD reactor and has a different coefficient of thermal expansion.

Therefore, the nitride has disadvantages in that it is difficult to ensure uniformity of the coating and is easily peeled off when the number of operation of the CVD reactor is increased. In this case, the number of coatings is increased, and it may be difficult to secure economic feasibility due to an increase in cost.

In general, the metal coating film is coated by physical vapor deposition, and it varies greatly depending on the source of ionizing the metal, the degree of ionization, the ionized particle size, and the characteristics of the formed metal coating film.

Among thermal spraying, plasma spray coating is an easy method for forming a metal thick film, and the metal coating film prepared by this method has excellent corrosion resistance. However, it is difficult to obtain a metal coating film having a specific purity or higher, and the pores are very large. In addition, it is difficult to secure economic feasibility because the yield is very low.

Cathodic arc deposition is a metal coating method for increasing the wear resistance of small tools, and it can obtain a high-purity metal coating film, but it is not commercialized in coating technology for large objects.

Plasma spray coating and cathodic arc deposition can be oxidized by HCl at high temperatures during CVD operation because the particles of the coating film are not dense. There are other methods such as evaporation and chemical vapor deposition, but the density and adhesion of the film are lower than those of other coating methods, and the coating conditions are not suitable for the CVD reactor.

An object of the present invention is to provide a CVD reactor in which a reflective coating film for polysilicon production is formed to reduce radiant heat loss generated from a high-temperature filament when polysilicon is manufactured by the Siemens CVD method, and a method for manufacturing the same.

Another object of the present invention is to provide a CVD reactor in which a reflective coating film for polysilicon production is formed by coating the inside of a bell jar in a CVD reactor with a material having excellent reflectivity, thereby reducing heat loss due to radiation, and a method for manufacturing the same.

The CVD reactor with a reflective coating film for polysilicon production according to an embodiment of the present invention is formed in double or multiple layers on the inner surface of the bell jar in a CVD (chemical vapor deposition) reactor to absorb heat emitted from the heated rod filament. A reflective coating film that reflects into the inside of the ruler, wherein the reflective coating film is formed toward the inner space of the bell jar and reflects heat; and a buffer layer formed between the reflective coating layer and the inner surface of the bell jar. .

The bell jar may further include a cooling water jacket provided outside to maintain a temperature of 300 degrees Celsius or less while the CVD reactor is in operation.

The bell jar includes an upper head and a lower wall, and the head may be formed in one of a hemispherical shape, an ellipsoidal shape, and a plate spherical shape.

The buffer layer is selected from the group consisting of SUS304, SUS316, iron, iron-based alloys, titanium, titanium-based alloys, copper, copper-based alloys, nickel and nickel-based alloys, molybdenum and molybdenum-based alloys, zinc and zinc-based alloys. It may be made of any one selected or a combination of at least two or more of them.

The reflective coating layer is characterized in that it is possible to secure long-term stability by forming a composite layer of a material having excellent reflectivity and a material having excellent high temperature corrosion resistance and abrasion resistance.

Any one selected from the group consisting of titanium and titanium alloys, titanium nitride, chromium and chromium alloys, chromium nitride, graphite, molybdenum and molybdenum alloys, zirconium and zirconium alloys It may be made of branches or a combination of at least two or more of them.

The reflective coating layer may have a heat reflectivity of 80% or more in ultraviolet visible light (UV-Vis) and near infrared (NIR) regions.

The method for manufacturing a CVD reactor having a reflective coating film for manufacturing polysilicon according to an embodiment of the present invention includes a first step of installing a bell jar of a CVD (chemical vapor deposition) reactor in a sputtering device, and installing a metal target toward the inner surface of the bell jar and a third step of depositing the metal target on the inner surface of the bell jar by a HIMS (high impulse magnetron sputtering) method to form a double or multi-layered reflective coating film.

In the second step, a large first metal target is placed on the wall of the bell jar, and one or a plurality of smaller second metal targets and a third metal target smaller than the first metal target according to the structure are placed on the head of the bell jar. , and the third step may form a uniform reflective coating film on the inner surface of the wall and the head.

In the third step, the bell jar may be rotated, and the reflective coating film may be formed.

The third step rotates the first metal target, the second metal target, the third metal target, and a first metal ionizer, a second metal ionizer, and a third metal ionizer supporting them, respectively, and forms the reflective coating film can do.

In the third step, one of the third metal targets may be moved up and down for coating the head.

The third step is to flow the cooling water into the cooling water jacket of the bell jar while the CVD reactor is in operation, and at 300 degrees Celsius or less, the first metal target, the second metal target, and the third metal target are applied to the bell jar. The reflective coating layer may be formed by sputtering deposition on the inner surface.

As described above, in one embodiment of the present invention, since a reflective coating film is formed in a double or multiple layer on the inner surface of the bell jar, heat emitted from the heated rod filament can be effectively reflected to the inside of the bell jar.

Therefore, when polysilicon is manufactured by the Siemens CVD method, the loss of radiant heat generated from the high-temperature filament can be minimized.

In addition, an embodiment of the present invention applies the HIMS (high impulse magnetron sputtering) method to form a reflective coating film as a double or multiple layer, so that the adhesion between the inner surface of the bell jar and the reflective coating film can be strengthened, and the density of the coating film can be improved. there is.

1 is a block diagram of a sputtering apparatus implementing a method of manufacturing a CVD reactor in which a reflective coating film for polysilicon production is formed according to an embodiment of the present invention.

Hereinafter, with reference to the accompanying drawings, the embodiments of the present invention will be described in detail so that those skilled in the art can easily carry out the present invention. However, the present invention may be embodied in several different forms and is not limited to the embodiments described herein. In order to clearly explain the present invention in the drawings, parts irrelevant to the description are omitted, and the same reference numerals are given to the same or similar components throughout the specification.

1 is a block diagram of a sputtering apparatus implementing a method of manufacturing a CVD reactor in which a reflective coating film for polysilicon production is formed according to an embodiment of the present invention. Referring to FIG. 1 , the sputtering device 10 is configured to implement a high impulse magnetron sputtering (HIMS) method in order to manufacture the bell jar 20 of the CVD reactor 1 on which a reflective coating film is formed.

The method of manufacturing a CVD reactor having a reflective coating film of an embodiment includes a first step of installing a bell jar of a CVD (chemical vapor deposition) reactor in a sputtering device 10, a second step of installing a metal target toward the inner surface of the bell jar and a third step of depositing the metal target on the inner surface of the bell jar by a HIMS (high impulse magnetron sputtering) method to form a double or multi-layered reflective coating film.

The CVD (chemical vapor deposition) reactor 1 through this manufacturing method is formed in double or multiple layers on the inner surface of the bell jar 20, and heat emitted from the heated rod filament (not shown) is removed from the bell jar 20. and a reflective coating layer CL that reflects into the inside of the . The sputtering device 10 is configured to form a reflective coating film CL on the inner surface of the bell jar 20 by the HIMS method.

In addition, in the manufacturing method of the CVD reactor in which the reflective coating film is formed, before forming the reflective coating film CL on the inner surface of the bell jar 20 (that is, before the third step), chemical/physical treatment of the inner surface of the bell jar 20 Through this, the surface roughness of the inner surface of the bell jar 20 can be minimized. As described above, the surface treatment of the inner surface of the bell jar 20 can maximize the effect of the reflective coating layer CL coating.

For example, the bell jar 20 of the CVD reactor 1 includes a wall 21 at the bottom and a head 22 connected to the top of the wall 21 . The head 22 may be formed in a hemispherical shape as shown, an ellipsoidal shape (not shown), or a plate sphere shape.

The reflective coating film CL is formed toward the inner space of the bell jar 20 and has a reflective coating layer L1 having excellent reflectivity, and a buffer layer L2 formed between the reflective coating layer L1 and the inner surface of the bell jar 20 . includes The buffer layer L2 and the reflective coating layer L1 may be sequentially formed on the inner surface of the bell jar 20 by the HIMS method of the sputtering device 10 .

For example, while the CVD reactor 1 is in operation, the temperature of the bell jar 20 is 300 degrees Celsius. The CVD reactor 1 is further provided with a cooling water jacket 23 on the outside so that the bell jar 20 maintains a temperature of 300 degrees Celsius or less during operation. The cooling water jacket 23 is connected to the inlet conduit 231 and the outlet conduit 232, and the cooling water is introduced into the inlet conduit 231 to cool the bell jar 20, and then the heated cooling water is discharged into the outlet conduit ( 232).

In the CVD reactor manufacturing method using the sputtering device 10, the second step is to place a large first metal target T1 on the wall 21 of the bell jar 20 for implementation of the HIMS method, and a head ( 22) A uniform reflective coating film on the inner surface of the bell jar 20 by disposing one or a plurality of second and third metal targets T2 and T3 smaller than the first metal target T1 according to the structure of the bell jar ( CL) can be formed.

That is, the first, second, and third metal targets T1 , T2 , and T3 are disposed toward the inner surface of the bell jar 20 , and the first, second, and third metal ionization targets disposed at the center of the bell jar 20 . connected to groups 11, 12 and 13, respectively.

The head 22 is divided into a hemispherical shape, an ellipsoidal shape, or a plate spherical shape. In order to form a uniform reflective coating film CL according to each structure, in the second step, the first, second, and third metal targets T1, The installation of T2, T3) can be adjusted.

As an example, the sputtering device 10 includes an outer rotating plate 141 and an inner rotating plate 142 . The outer rotating plate 141 and the inner rotating plate 142 are separated from each other so as to rotate relative to each other. The inner rotating plate 142 is disposed on the radially inner side of the outer rotating plate 141 formed in the shape of a circular band to form a plane of the same height. In the first step, the bell jar 20 of the CVD reactor 1 to be coated is installed on the outer rotating plate 141 . The bell jar 20 is rotatably supported by the outer rotating plate 141 .

In the second step, the first, second, and third metal targets T1 , T2 , and T3 are installed on the inner rotating plate 142 . The first, second, and third metal targets T1 , T2 , and T3 are rotatably supported by the inner rotating plate 142 .

And in the second step, the first, second, and third metal ionizers 11 , 12 , 13 are further disposed on the inner rotating plate 142 . The first, second, and third metal ionizers 11 , 12 , and 13 may support and ionize the first, second, and third metal targets T1 , T2 , and T3 , respectively.

The third step is to ionize the first, second, and third metal targets (T1, T2, T3) according to the operation of the first, second, and third metal ionizers (11, 12, 13) to form a sputtering action. A reflective coating film CL is formed by attaching to the inner surface of the bell jar 20 .

In the third step, in a state in which the first, second, and third metal targets T1 , T2 , and T3 are fixed to the inner rotating plate 142 , the outer rotating plate 141 may rotate together with the bell jar 20 . . In this way, as the bell jar 20 rotates, the reflective coating layer CL may be more uniformly formed on the inner surface of the bell jar 20 . The outer rotating plate 141 and the bell jar 20 are rotated at a low speed of several rpm.

In addition, in the third step in a state in which the bell jar 20 is fixed to the outer rotating plate 141 , the inner rotating plate 142 may be rotated. The inner rotating plate 142 may be rotated together with the first, second, and third metal targets T1 , T2 , and T3 and the first, second, and third metal ionizers 11 , 12 , and 13 .

In this way, as the first, second, and third metal targets T1, T2, and T3 and the first, second, and third metal ionizers 11, 12, 13 rotate, the inner surface of the bell jar 20 The reflective coating layer CL may be formed more uniformly. The inner rotating plate 142, the first, second, and third metal targets T1, T2, T3, and the first, second, and third metal ionizers 11, 12, 13 are rotated at a low speed.

In the third step, the spurring device 10 is the first, second, and third metal ionizers 11, 12, 13 and the first, second, and third metal targets T1 in the inner central axis 15. , T2, T3) can be adjusted to the length of the connecting portion (16). Therefore, the spurring device 10 may be equally applied to the bell jar 20 having different diameters and heights to form a reflective coating film CL on the inner surface of the bell jar 20 .

In addition, the connecting portion 16 may be rotated integrally with the inner central shaft 15 (integrated structure not shown), and may be connected in a structure that is not affected by the lifting and lowering of the inner central shaft 15 . And the inner central shaft 15 may rotate integrally with the inner rotating plate 142 (integrated structure not shown), or may be raised and lowered separately from the inner rotating plate 142 . Therefore, when coating the head 22 in the third step, the inner central axis 15 may move one third metal target T3 in the vertical direction.

In the third step, as the distance between the third metal target T3 and the third metal ionizer 13 is moved up and down in the vertical direction and the distance from the inner surface of the head 22 is changed, the reflective coating layer CL is formed more uniformly. can be

The bell jar 20 of an embodiment includes a reflective coating layer CL and a reflective coating layer L1 that are ionized from the first, second, and third metal targets T1, T2, and T3 and are coated on the inner surface, so the conventional CVD Compared with the power consumption of the reactor bell jar, it is possible to save up to 15% of radiant heat loss.

When manufacturing polysilicon using a Siemens CVD reactor, by using the bell jar 20 having a reflective coating film (CL) and a reflective coating layer (L1), a significant portion of the radiant heat lost among the heat emitted from the high-temperature filament will be reduced. can

In the third step, the steps of forming the buffer layer L2 on the inner surface of the bell jar 20 and the reflective coating layer L1 on the buffer layer L2 are sequentially performed. At least one of the buffer layer L2 and the reflective coating layer L1 is formed by a HIMS (high impulse magnetron sputtering) method.

Among the reflective coating films CL formed on the inner surface of the bell jar 20 , the reflective coating layer L1 is made of gold, gold alloy, silver, It is formed of any one selected from the group consisting of silver alloy, silver nitride, titanium, titanium nitride, hafnium, hafnium nitride, zirconium, zirconium nitride, chromium, and chromium nitride, or a combination of at least two or more thereof.

The reflective coating layer (L1) has excellent corrosion resistance at a temperature during operation of the CVD reactor (1) and the bell jar (20), so durability can be secured. The reflective coating layer L1 may have a reflectivity of 80% or more in ultraviolet visible light (UV-Vis) and near infrared (NIR) regions.

The reflective coating layer (L1) is coated to form a composite layer with a material having excellent high-temperature corrosion resistance and abrasion resistance to solve the corrosion and wear problems caused by the operation of the CVD reactor (1). The material having excellent high temperature corrosion resistance and wear resistance is selected from the group consisting of titanium and titanium alloys, titanium nitride, chromium and chromium alloys, chromium nitride, graphite, molybdenum and molybdenum alloys, zirconium and zirconium alloys. It is formed by any one or a combination of at least two or more of them.

The buffer layer (L2) is first formed between the inner surface of the bell jar 20 and the reflective coating layer (L1), to prevent a decrease in adhesion between the reflective coating film (CL) and the CVD reactor (1), the bell jar (20), and a reflective coating film ( CL) to prevent cracking and peeling. That is, the buffer layer L2 strengthens the adhesion between the inner surface of the bell jar 20 and the reflective coating layer L1 .

A material suitable for the buffer layer L2 may be a material having a thermal expansion coefficient similar to that of the bell jar 20 at 300 degrees Celsius or less, which is the temperature of the bell jar 20 during polysilicon deposition. Accordingly, since the buffer layer L2 is thermally expanded integrally with the bell jar 20 , it is possible to effectively prevent the reflective coating film CL from being peeled or cracked from the inner surface of the bell jar 20 .

This embodiment illustrates one buffer layer L2. However, although not shown, a plurality of buffer layers may be formed. In this case, the plurality of buffer layers may be formed of materials having a thermal expansion coefficient that is changed stepwise between the thermal expansion coefficient of the bell jar and the thermal expansion coefficient of the reflective coating layer between the inner surface side of the bell jar and the reflective coating layer. Accordingly, the reflective coating film can be more effectively prevented from peeling or cracking from the inner surface of the bell jar.

For example, the buffer layer L2 may include any one selected from the group consisting of SUS304, SUS316, iron, iron-based alloy, titanium, titanium-based alloy, copper, copper-based alloy, nickel, and nickel-based alloy, or at least two of them. It can be formed by combining the above.

In this way, the bell jar 20 is provided with the reflective coating film CL in double or multiple layers on the inner surface. The reflective coating film CL including the buffer layer L2 and the reflective coating layer L1 may have long-term durability without cracking or peeling even when the number of operations of the CVD reactor 1 and the bell jar 20 increases. Accordingly, the reflective coating layer CL may continuously prevent loss of radiant heat from the bell jar 20 .

Among various physical vapor deposition (PVD) coating methods, a high impulse magnetron sputtering (HIMS) method may increase durability and high temperature corrosion resistance of the reflective coating layer CL. The HIMS method by the sputtering device 10 makes the particles of the reflective coating film CL very dense and has excellent adhesion to the inner surface of the bell jar 20 .

The HIMS method of the sputtering device 10 is easy to coat the reflective coating film CL on the inside of the large bell jar 20, and it is possible to obtain a reflective coating film CL having the highest purity and dense particles among the PVD coating methods. .

The particle size forming the reflective coating layer CL may be of several micrometers to secure HCl corrosion resistance, and more specifically, may be composed of particles of 0.1 micrometer or less.

In addition, when the metal oxide is included in the reflective coating layer CL, it acts as a cause of oxidation. Therefore, it is necessary to obtain the reflective coating layer CL of high purity as much as possible without the metal oxide. The HIMS method of the sputtering device 10 may form a high-purity reflective coating layer CL.

More specifically, when the reflective coating layer CL with a purity of 99% or more is formed, the reflective coating layer CL can be maintained for a long time even when the number of operations of the CVD reactor 1 and the bell jar 20 increases. The thickness of the reflective coating layer CL may be 0.5 to 10 micrometers.

The silicon-containing gas source, which is a polysilicon raw material that is input and deposited into the inside of the bell jar 20 in the CVD reactor 1 manufactured in one embodiment, is from the group consisting of monosilane, disilane, chlorosilane, and a mixture of these gases. can be selected.

Although preferred embodiments of the present invention have been described above, the present invention is not limited thereto, and various modifications and variations are possible within the scope of the appended claims and the detailed description of the invention and the accompanying drawings. It goes without saying that it falls within the scope of the invention.

1: CVD reactor 10: sputtering equipment
11, 12: first and second metal ionizers 13: third metal ionizer
15: inner central axis 16: connection part
20: Belja 21: wall
22: head 23: cooling water jacket
141: outer rotating plate 142: inner rotating plate
232: inlet conduit 232: outlet conduit
CL: reflective coating film L1: reflective coating layer
L2: buffer layer T1, T2: first, second metal target
T3: third metal target

Claims (13)

On the inner surface of the bell jar in a CVD (chemical vapor deposition) reactor
Formed in double or multiple layers,
It includes a reflective coating film that reflects the heat emitted from the heated rod filament to the inside of the bell jar,
The reflective coating film is
A buffer layer formed on the inner surface of the bell jar, and
A reflective coating layer formed on the inner surface of the buffer layer and formed toward the inner space of the bell jar to reflect heat
includes,
The reflective coating film is
The wall of the bell jar is formed of a large first metal target,
In the head of the bell jar, it is formed of a second metal target and a third metal target smaller than the first metal target according to the structure,
The third metal target faces the head of the bell jar, and the second metal target faces the head of the bell jar corresponding between the first metal target and the third metal target, CVD reactor with a reflective coating film for manufacturing polysilicon formed . According to claim 1,
the bell jar
During operation of the CVD reactor, further comprising a cooling water jacket provided outside to maintain a temperature of 300 degrees Celsius or less
A CVD reactor with a reflective coating film for polysilicon production. According to claim 1,
the bell jar
It includes an upper head and a lower wall,
the head is
Formed in one of hemispherical, ellipsoidal and plate-spherical
A CVD reactor with a reflective coating film for polysilicon production. According to claim 1,
The buffer layer is
Any one selected from the group consisting of SUS304, SUS316, iron, iron-based alloys, titanium, titanium-based alloys, copper, copper-based alloys, nickel and nickel-based alloys, molybdenum and molybdenum-based alloys, and zinc and zinc-based alloys or a combination of at least two or more of these
A CVD reactor with a reflective coating film for polysilicon production. According to claim 1,
The reflective coating layer is
It is characterized in that it is possible to secure long-term stability by forming a composite layer with a material with excellent reflectivity and high temperature corrosion resistance and abrasion resistance.
A CVD reactor with a reflective coating film for polysilicon production. 6. The method of claim 5,
High-temperature corrosion-resistant materials
Any one or at least two selected from the group consisting of titanium and titanium-based alloys, titanium nitride, chromium and chromium-based alloys, chromium nitride, graphite, molybdenum and molybdenum-based alloys, zirconium and zirconium-based alloy alloys made by combining the above
A CVD reactor with a reflective coating film for polysilicon production. According to claim 1,
The reflective coating layer is
It has a heat reflectivity of 80% or more in the ultraviolet visible (UV-Vis) and near infrared (NIR) regions.
A CVD reactor with a reflective coating film for polysilicon production. A first step of installing a bell jar of a CVD (chemical vapor deposition) reactor in a sputtering device;
a second step of installing a metal target toward the inner surface of the bell jar; and
A third step of depositing the metal target on the inner surface of the bell jar by a HIMS (high impulse magnetron sputtering) method to form a double or multi-layered reflective coating film
includes,
The second step is
A large first metal target is placed on the wall of the bell jar,
One or a plurality of smaller second metal targets and third metal targets smaller than the first metal target are disposed on the head of the bell jar according to the structure,
The third metal target faces the head of the bell jar, and the second metal target faces the head of the bell jar corresponding between the first metal target and the third metal target, CVD reactor with a reflective coating film for manufacturing polysilicon formed manufacturing method. 9. The method of claim 8,
The third step is
forming a uniform reflective coating film on the wall and the inner surface of the head
A method for manufacturing a CVD reactor in which a reflective coating film for polysilicon production is formed. 9. The method of claim 8,
The third step is
rotating the bell jar,
forming the reflective coating film
A method for manufacturing a CVD reactor in which a reflective coating film for polysilicon production is formed. 10. The method of claim 9,
The third step is
rotating the first metal target, the second metal target, the third metal target, and a first metal ionizer, a second metal ionizer, and a third metal ionizer supporting them, respectively;
forming the reflective coating film
A method for manufacturing a CVD reactor in which a reflective coating film for polysilicon production is formed. 10. The method of claim 9,
The third step is
For coating the head,
moving one of the third metal targets in the vertical direction
A method for manufacturing a CVD reactor in which a reflective coating film for polysilicon production is formed. 10. The method of claim 9,
The third step is
During the operation of the CVD reactor, cooling water is flowed into the cooling water jacket of the bell jar at 300 degrees Celsius or less,
By sputtering deposition of the first metal target, the second metal target, and the third metal target on the inner surface of the bell jar
forming the reflective coating film
A method for manufacturing a CVD reactor in which a reflective coating film for polysilicon production is formed.

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