CN102819196B - 用于微光刻的投射物镜 - Google Patents

用于微光刻的投射物镜 Download PDF

Info

Publication number
CN102819196B
CN102819196B CN201210286762.3A CN201210286762A CN102819196B CN 102819196 B CN102819196 B CN 102819196B CN 201210286762 A CN201210286762 A CN 201210286762A CN 102819196 B CN102819196 B CN 102819196B
Authority
CN
China
Prior art keywords
projection optics
field
image
optical system
optics system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201210286762.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN102819196A (zh
Inventor
约翰尼斯.泽尔纳
汉斯-于尔根.曼
马丁.恩德雷斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE200810000800 external-priority patent/DE102008000800A1/de
Priority claimed from DE200810033342 external-priority patent/DE102008033342A1/de
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Publication of CN102819196A publication Critical patent/CN102819196A/zh
Application granted granted Critical
Publication of CN102819196B publication Critical patent/CN102819196B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G02B17/0663—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which not all of the mirrors share a common axis of rotational symmetry, e.g. at least one of the mirrors is warped, tilted or decentered with respect to the other elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201210286762.3A 2008-03-20 2009-02-28 用于微光刻的投射物镜 Active CN102819196B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102008000800.1 2008-03-20
DE200810000800 DE102008000800A1 (de) 2008-03-20 2008-03-20 Projektionsobjektiv für die Mikrolithographie
DE102008033342.5 2008-07-16
DE200810033342 DE102008033342A1 (de) 2008-07-16 2008-07-16 Projektionsobjektiv für die Mikrolithographie
CN2009801100235A CN101978324B (zh) 2008-03-20 2009-02-28 用于微光刻的投射物镜

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2009801100235A Division CN101978324B (zh) 2008-03-20 2009-02-28 用于微光刻的投射物镜

Publications (2)

Publication Number Publication Date
CN102819196A CN102819196A (zh) 2012-12-12
CN102819196B true CN102819196B (zh) 2016-03-09

Family

ID=40638016

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201210286762.3A Active CN102819196B (zh) 2008-03-20 2009-02-28 用于微光刻的投射物镜
CN2009801100235A Active CN101978324B (zh) 2008-03-20 2009-02-28 用于微光刻的投射物镜

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2009801100235A Active CN101978324B (zh) 2008-03-20 2009-02-28 用于微光刻的投射物镜

Country Status (6)

Country Link
US (2) US8629972B2 (https=)
EP (2) EP2255251B1 (https=)
JP (2) JP6112478B2 (https=)
KR (1) KR101656534B1 (https=)
CN (2) CN102819196B (https=)
WO (1) WO2009115180A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102819196B (zh) * 2008-03-20 2016-03-09 卡尔蔡司Smt有限责任公司 用于微光刻的投射物镜
CN102422225B (zh) 2009-03-06 2014-07-09 卡尔蔡司Smt有限责任公司 用于微光刻的照明光学系统与光学系统
EP2506061A4 (en) 2009-11-24 2017-12-20 Nikon Corporation Image-forming optical system, exposure apparatus, and device producing method
EP2598931B1 (en) 2010-07-30 2020-12-02 Carl Zeiss SMT GmbH Imaging optical system and projection exposure installation for microlithography with an imaging optical system of this type
CN102402135B (zh) * 2011-12-07 2013-06-05 北京理工大学 一种极紫外光刻投影物镜设计方法
CN102608737B (zh) * 2012-03-19 2013-10-02 北京理工大学 一种极紫外投影光刻物镜
CN102681357B (zh) * 2012-04-01 2014-02-05 北京理工大学 一种极紫外光刻投影物镜设计方法
CN102629082B (zh) * 2012-04-28 2013-11-06 北京理工大学 一种极紫外光刻复眼照明系统的设计方法
WO2014019617A1 (en) * 2012-08-01 2014-02-06 Carl Zeiss Smt Gmbh Imaging optical unit for a projection exposure apparatus
US9448343B2 (en) * 2013-03-15 2016-09-20 Kla-Tencor Corporation Segmented mirror apparatus for imaging and method of using the same
DE102015226531A1 (de) * 2015-04-14 2016-10-20 Carl Zeiss Smt Gmbh Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen abbildenden Optik

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1594007A2 (en) * 2004-05-07 2005-11-09 Canon Kabushiki Kaisha Assembly and adjusting method of optical system, exposure apparatus having the optical system

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6147914A (ja) * 1984-08-14 1986-03-08 Canon Inc 反射光学系
JP2000091209A (ja) 1998-09-14 2000-03-31 Nikon Corp 露光装置の製造方法、露光装置、及びデバイス製造方法
US6859328B2 (en) 1998-05-05 2005-02-22 Carl Zeiss Semiconductor Illumination system particularly for microlithography
US20050002090A1 (en) * 1998-05-05 2005-01-06 Carl Zeiss Smt Ag EUV illumination system having a folding geometry
DE10053587A1 (de) 2000-10-27 2002-05-02 Zeiss Carl Beleuchtungssystem mit variabler Einstellung der Ausleuchtung
DE19908526A1 (de) 1999-02-26 2000-08-31 Zeiss Carl Fa Beleuchtungssystem mit Feldspiegeln zur Erzielung einer gleichförmigen Scanenergie
DE10138313A1 (de) * 2001-01-23 2002-07-25 Zeiss Carl Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
US6396067B1 (en) 1998-05-06 2002-05-28 Koninklijke Philips Electronics N.V. Mirror projection system for a scanning lithographic projection apparatus, and lithographic apparatus comprising such a system
US6577443B2 (en) * 1998-05-30 2003-06-10 Carl-Zeiss Stiftung Reduction objective for extreme ultraviolet lithography
US6072852A (en) * 1998-06-09 2000-06-06 The Regents Of The University Of California High numerical aperture projection system for extreme ultraviolet projection lithography
US6195201B1 (en) * 1999-01-27 2001-02-27 Svg Lithography Systems, Inc. Reflective fly's eye condenser for EUV lithography
US6361176B1 (en) 1999-07-09 2002-03-26 Nikon Corporation Reflection reduction projection optical system
JP2003506881A (ja) 1999-07-30 2003-02-18 カール ツァイス シュティフトゥング トレイディング アズ カール ツァイス Ｅｕｖ照明光学系の射出瞳における照明分布の制御
JP3840031B2 (ja) * 2000-03-09 2006-11-01 キヤノン株式会社 投射光学系及びそれを用いた投射型表示装置
JP2002015979A (ja) * 2000-06-29 2002-01-18 Nikon Corp 投影光学系、露光装置及び露光方法
TW573234B (en) * 2000-11-07 2004-01-21 Asml Netherlands Bv Lithographic projection apparatus and integrated circuit device manufacturing method
JP2002329655A (ja) 2001-05-01 2002-11-15 Canon Inc 反射型縮小投影光学系、露光装置及びデバイス製造方法
US7015491B2 (en) 2001-06-01 2006-03-21 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby, control system
JP2003045782A (ja) 2001-07-31 2003-02-14 Canon Inc 反射型縮小投影光学系及びそれを用いた露光装置
SG121762A1 (en) 2002-03-18 2006-05-26 Asml Netherlands Bv Lithographic apparatus, and device manufacturing method
JP2004258541A (ja) * 2003-02-27 2004-09-16 Canon Inc 反射型光学系
DE10317667A1 (de) 2003-04-17 2004-11-18 Carl Zeiss Smt Ag Optisches Element für ein Beleuchtungssystem
DE10360414A1 (de) 2003-12-19 2005-07-21 Carl Zeiss Smt Ag EUV-Projektionsobjektiv sowie Verfahren zu dessen Herstellung
JP2005235959A (ja) * 2004-02-18 2005-09-02 Canon Inc 光発生装置及び露光装置
US7184124B2 (en) * 2004-10-28 2007-02-27 Asml Holding N.V. Lithographic apparatus having an adjustable projection system and device manufacturing method
US7196343B2 (en) * 2004-12-30 2007-03-27 Asml Netherlands B.V. Optical element, lithographic apparatus including such an optical element, device manufacturing method, and device manufactured thereby
US7453645B2 (en) 2004-12-30 2008-11-18 Asml Netherlands B.V. Spectral purity filter, lithographic apparatus including such a spectral purity filter, device manufacturing method, and device manufactured thereby
US20060162739A1 (en) 2005-01-21 2006-07-27 Nikon Corporation Cleaning chuck in situ
JP2006245147A (ja) 2005-03-01 2006-09-14 Canon Inc 投影光学系、露光装置及びデバイスの製造方法
EP2169465A1 (en) 2005-05-13 2010-03-31 Carl Zeiss SMT AG A six-mirror EUV projection system
TWI366004B (en) 2005-09-13 2012-06-11 Zeiss Carl Smt Gmbh Microlithography projection optical system, microlithographic tool comprising such an optical system, method for microlithographic production of microstructured components using such a microlithographic tool, microstructured component being produced by s
DE102006043251A1 (de) 2005-09-13 2007-03-15 Carl Zeiss Smt Ag Mikrolithographie-Projektionsobjektiv, Projektionsbelichtungsanlage mit einem derartigen Objektiv, Herstellungsverfahren mikrostrukturierter Bauteile mit einer derartigen Projektionsbelichtungsanlage sowie mit diesem Verfahren hergestelltes Bauteil
DE102006003375A1 (de) 2006-01-24 2007-08-09 Carl Zeiss Smt Ag Gruppenweise korrigiertes Objektiv
DE102006014380A1 (de) 2006-03-27 2007-10-11 Carl Zeiss Smt Ag Projektionsobjektiv und Projektionsbelichtungsanlage mit negativer Schnittweite der Eintrittspupille
CN101416117B (zh) 2006-04-07 2014-11-05 卡尔蔡司Smt有限责任公司 微光刻投影光学系统、工具及其制造方法
DE102006026032B8 (de) 2006-06-01 2012-09-20 Carl Zeiss Smt Gmbh Beleuchtungssystem zur Ausleuchtung eines vorgegebenen Beleuchtungsfeldes einer Objektoberfläche mit EUV-Strahlung
DE102006036064A1 (de) 2006-08-02 2008-02-07 Carl Zeiss Smt Ag Beleuchtungssystem für eine Projektionsbelichtungsanlage mit Wellenlängen ≦ 193 nm
KR20080012240A (ko) 2006-08-02 2008-02-11 칼 짜이스 에스엠티 아게 193ｎｍ 이하의 파장을 갖는 투영 노광 장치를 위한 조명시스템
DE102006056035A1 (de) 2006-11-28 2008-05-29 Carl Zeiss Smt Ag Beleuchtungsoptik für die EUV-Projektions-Mikrolithographie, Beleuchtungssystem mit einer derartigen Beleuchtungsoptik, Projektionsbelichtungsanlage mit einem derartigen Beleuchtungssystem, Verfahren zur Herstellung eines mikrostrukturierten Bauteils sowie durch das Verfahren hergestelltes mikrostrukturiertes Bauteil
EP1930771A1 (en) * 2006-12-04 2008-06-11 Carl Zeiss SMT AG Projection objectives having mirror elements with reflective coatings
DE102006059024A1 (de) 2006-12-14 2008-06-19 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie, Beleuchtungsoptik für eine derartige Projektionsbelichtungsanlage, Verfahren zum Betrieb einer derartigen Projektionsbelichtungsanlage, Verfahren zur Herstellung eines mikrostrukturierten Bauteils sowie durch das Verfahren hergestelltes mikrostrukturiertes Bauteil
JP2008158211A (ja) 2006-12-22 2008-07-10 Canon Inc 投影光学系及びそれを用いた露光装置
EP1950594A1 (de) 2007-01-17 2008-07-30 Carl Zeiss SMT AG Abbildende Optik, Projektionsbelichtunsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik, Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage, durch das Herstellungsverfahren gefertigtes mikrostrukturiertes Bauelement sowie Verwendung einer derartigen abbildenden Optik
US7889321B2 (en) * 2007-04-03 2011-02-15 Asml Netherlands B.V. Illumination system for illuminating a patterning device and method for manufacturing an illumination system
DE102008014832A1 (de) 2007-04-19 2008-10-23 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie
CN102819196B (zh) 2008-03-20 2016-03-09 卡尔蔡司Smt有限责任公司 用于微光刻的投射物镜
DE102008002749A1 (de) 2008-06-27 2009-12-31 Carl Zeiss Smt Ag Beleuchtungsoptik für die Mikrolithografie
CN102422225B (zh) * 2009-03-06 2014-07-09 卡尔蔡司Smt有限责任公司 用于微光刻的照明光学系统与光学系统

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1594007A2 (en) * 2004-05-07 2005-11-09 Canon Kabushiki Kaisha Assembly and adjusting method of optical system, exposure apparatus having the optical system

Also Published As

Publication number Publication date
US20140104588A1 (en) 2014-04-17
EP2255251A1 (en) 2010-12-01
EP2541324B1 (en) 2016-04-13
JP6249449B2 (ja) 2017-12-20
EP2541324A1 (en) 2013-01-02
WO2009115180A1 (en) 2009-09-24
US9304408B2 (en) 2016-04-05
KR20100124817A (ko) 2010-11-29
KR101656534B1 (ko) 2016-09-09
JP2015132853A (ja) 2015-07-23
JP2011517786A (ja) 2011-06-16
CN102819196A (zh) 2012-12-12
CN101978324B (zh) 2013-04-03
US20110026003A1 (en) 2011-02-03
CN101978324A (zh) 2011-02-16
US8629972B2 (en) 2014-01-14
JP6112478B2 (ja) 2017-04-12
EP2255251B1 (en) 2017-04-26

Similar Documents

Publication Publication Date Title
JP7565324B2 (ja) 物体視野を像視野内に結像するための投影光学ユニット及びそのような投影光学ユニットを含む投影露光装置
CN102819196B (zh) 用于微光刻的投射物镜
CN107810446B (zh) 将物场成像至像场中的成像光学单元，以及包括这种成像光学单元的投射曝光设备
CN102317866B (zh) 成像光学系统和具有此类型的成像光学系统的用于微光刻的投射曝光设备
CN102422225B (zh) 用于微光刻的照明光学系统与光学系统
CN101836164B (zh) 成像光学系统和具有该类型的成像光学系统的微光刻投射曝光设备
JP2013541729A (ja) 結像光学系
CN107111242A (zh) Euv投射光刻的照明光学单元
CN108292032B (zh) 将物场成像到像场中的成像光学单元，以及包括这种成像光学单元的投射曝光设备
CN102099742A (zh) 成像光学部件
CN101836151B (zh) 成像光学系统、包括该类型的成像光学系统的用于微光刻的投射曝光设备、以及利用该类型的投射曝光设备生产微结构部件的方法
TWI539231B (zh) 成像光學系統、具有此類型成像光學系統之用於微影的投射曝光設備以及用於製造結構化組件的方法
CN119404136A (zh) 用于将物场成像到像场的成像euv光学单元
CN117441122A (zh) 成像光学单元
CN120981768A (zh) 用于将物场成像至像场的成像euv光学单元
CN120958378A (zh) 用于将物场成像至像场的成像euv光学单元
CN119365823A (zh) 用于将物场成像到像场的成像euv光学单元
CN117441116A (zh) 成像光学单元
TWI805619B (zh) 用於將物場成像至像場的成像光學單元
CN103109225B (zh) 成像光学系统

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant