CN102801408A - High-power IGBT drive circuit - Google Patents
High-power IGBT drive circuit Download PDFInfo
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- CN102801408A CN102801408A CN2012103153349A CN201210315334A CN102801408A CN 102801408 A CN102801408 A CN 102801408A CN 2012103153349 A CN2012103153349 A CN 2012103153349A CN 201210315334 A CN201210315334 A CN 201210315334A CN 102801408 A CN102801408 A CN 102801408A
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Abstract
The invention discloses a high-power insulated gate bipolar translator (IGBT) drive circuit, which comprises a seventh integrated triode array and other components, wherein a ninth triode is connected with a thirty-first resistor; the thirty-first resistor is connected with the seventh integrated triode array, an eighth integrated triode array and a fourteenth diode; a twenty-eighth resistor is connected with the fourteenth diode; the seventh integrated triode array is connected with an eleventh triode; the eighth integrated triode array is connected with a twelfth triode; the twenty-eighth resistor is connected with a tenth triode and a twenty-third resistor; the twenty-third resistor is connected with a twenty-second resistor and an eighth capacitor; a twenty-fourth resistor is connected between the seventh integrated triode array and the eleventh triode; a twenty-sixth resistor is connected between the eighth integrated triode array and the twelfth triode; and the tenth triode is connected with a tenth capacitor, an eleventh capacitor and a fourth voltage-regulator tube. The high-power IGBT drive circuit implements fiber-optic isolation, and has high switching frequency and strong driving capability.
Description
Technical field
The present invention relates to a kind of drive circuit, particularly relate to a kind of high-power IGBT drive circuit.
Background technology
Existing high-power IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) drive circuit all is the drive circuit board of external import, and price is high, and switching frequency is low, and driving power is little.
Summary of the invention
Technical problem to be solved by this invention provides a kind of high-power IGBT drive circuit, and it realizes the optical fiber isolation, and switching frequency is high, and driving force is strong.
The present invention solves above-mentioned technical problem through following technical proposals: a kind of high-power IGBT drive circuit; It is characterized in that; It comprises the 7th integrated triode array, the 8th integrated triode array, the 9th triode, the tenth triode, the 11 triode, the 12 triode, the 22 resistance, the 23 resistance, the 24 resistance, the 26 resistance, the 28 resistance, the 31 resistance, the 33 resistance, the 39 resistance, the 42 resistance, the 14 diode, the 21 diode, the 24 diode, the 25 diode, the 26 diode, the 8th electric capacity, the tenth electric capacity, the 11 electric capacity, the 4th voltage-stabiliser tube; The 9th triode is connected with the 31 resistance; The 31 resistance is connected with the 7th integrated triode array, the 8th integrated triode array, the 14 diode; The 28 resistance is connected with the 14 diode; The 7th integrated triode array is connected with the 11 triode; The 8th integrated triode array is connected with the 12 triode; The 28 resistance is connected with the tenth triode, the 23 resistance; The 23 resistance is connected with the 22 resistance, the 8th electric capacity, and the 24 resistance is connected between the 7th integrated triode array and the 11 triode, and the 26 resistance is connected between the 8th integrated triode array and the 12 triode; The tenth triode is connected with the tenth electric capacity, the 11 electric capacity, the 4th voltage-stabiliser tube; The 11 electric capacity is connected with the 33 resistance, the 39 resistance, the 42 resistance, and the 21 diode is connected with the 11 triode, the 12 triode, and the 33 resistance is connected with the 24 diode, the 25 diode, the 26 diode; The 9th triode, the 7th integrated triode array and the 8th integrated triode array are the switching mode device, and the 11 triode, the 12 triode all are large power triodes.
Positive progressive effect of the present invention is: the present invention realizes soft shutoff, and optical fiber is isolated, and switching frequency is high, and driving force is strong, has short-circuit protection.
Description of drawings
Fig. 1 is the sketch map of high-power IGBT drive circuit of the present invention.
Embodiment
Provide preferred embodiment of the present invention below in conjunction with accompanying drawing, to specify technical scheme of the present invention.
As shown in Figure 1; High-power IGBT drive circuit of the present invention comprises the 7th integrated triode array Q7, the 8th integrated triode array Q8, the 9th triode Q9, the tenth triode Q10, the 11 triode Q11, the 12 triode Q12, the 22 resistance R the 22, the 23 resistance R the 23, the 24 resistance R the 24, the 26 resistance R the 26, the 28 resistance R the 28, the 31 resistance R the 31, the 33 resistance R the 33, the 39 resistance R the 39, the 42 resistance R the 42, the 14 diode D14, the 21 diode D21, the 24 diode D24, the 25 diode D25, the 26 diode D26, the 8th capacitor C 8, the tenth capacitor C the 10, the 11 capacitor C 11, the 4th voltage-stabiliser tube Z4; The 9th triode Q9 is connected with the 31 resistance R 31; The 31 resistance R 31 is connected with the 7th integrated triode array Q7, the 8th integrated triode array Q8, the 14 diode D14; The 28 resistance R 28 is connected with the 14 diode D14; The 7th integrated triode array Q7 is connected with the 11 triode Q11; The 8th integrated triode array Q8 is connected with the 12 triode Q12; The 28 resistance R 28 is connected with the tenth triode Q10, the 23 resistance R 23; The 23 resistance R 23 is connected with the 22 resistance R 22, the 8th capacitor C 8; The 24 resistance R 24 is connected between the 7th integrated triode array Q7 and the 11 triode Q11; The 26 resistance R 26 is connected between the 8th integrated triode array Q8 and the 12 triode Q12; The tenth triode Q10 is connected with the tenth capacitor C the 10, the 11 capacitor C 11, the 4th voltage-stabiliser tube Z4; The 11 capacitor C 11 is connected with the 33 resistance R the 33, the 39 resistance R the 39, the 42 resistance R 42, and the 21 diode D21 is connected with the 11 triode Q11, the 12 triode Q12, and the 33 resistance R 33 is connected with the 24 diode D24, the 25 diode D25, the 26 diode D26.
Fiber optic receiver U4 is the photosignal change-over circuit, can adopt R-2521Z type optic fiber transceiver module.After fiber optic receiver receives signal, its 4th end signal step-down, the 9th triode Q9 base potential step-down makes the Uce conducting of the 9th triode, and the Uc current potential of the 9th triode is elevated to driving voltage, i.e. VCC – Uce saturation voltage drop.NPN type triode saturation conduction among the 7th integrated triode array Q7 and the 8th integrated triode array Q8; Driving voltage VCC is through the NPN type triode among the 7th integrated triode array Q7 and the 8th integrated triode array Q8; And the 24 resistance R 24 and the 26 resistance R 26; Be applied to the 11 triode Q11 (the 11 triode Q11 is a large power triode); Make the 11 triode Q11 conducting, then the 11 triode Q11 through the gate pole IGBT_G that the 21 diode D21 is applied to IGBT (insulated gate bipolar transistor), opens IGBT to driving voltage VCC.
When fiber optic receiver is not received signal; Its 4th end is high-impedance state over the ground; The 9th triode Q9 base stage does not have bias current, and promptly the Uce of the 9th triode Q9 breaks off, and the Uc current potential of the 9th triode Q9 is by the dividing potential drop decision of the 31 resistance R 31 and the 42 resistance R 42; Positive-negative-positive triode saturation conduction among the 7th integrated triode array Q7, the 8th integrated triode array Q8; Negative bias voltage Vee is applied to the base stage of the 11 triode Q11, the 12 triode Q12 (the 12 triode Q12 is a large power triode) through 24 resistance R 24 and the 26 resistance R 26, the 12 triode Q12 conducting, and its emitter voltage is similar to negative bias voltage Vee; This voltage turn-offs IGBT through the gate pole IGBT_G that the 21 diode D21 is applied to IGBT.
High-power IGBT drive circuit of the present invention adopts optical fiber to isolate; Isolation voltage is high; Adopt the 9th triode Q9, the 7th integrated triode array Q7 and the 8th integrated triode array Q8, because the 9th triode Q9, the 7th integrated triode array Q7 and the 8th integrated triode array Q8 are the switching mode device, the storage of charge carrier and recovery time are short; So its switching frequency is high, antijamming capability is strong.
The drive part of IGBT adopts the 11 triode Q11, the 12 triode Q12, and the 11 triode Q11, the 12 triode Q12 are large power triodes, because the large power triode drive current is big, thereby driving force is strong.
After fiber optic receiver receives signal; The 9th triode Q9 conducting; Driving voltage VCC is through the Uce of the 9th triode Q9; Be applied to the 7th integrated triode array Q7 and the 8th integrated triode array Q8, this road voltage gives the 11 capacitor C 11 chargings through the 26 diode D26 and the 33 resistance R 33 simultaneously.After the voltage of the 11 capacitor C 11 reached certain voltage, this voltage arrived the collector terminal IGBT_C of IGBT through the 39 resistance R 39, the 24 diode D24 and the 25 diode D25.If the IGBT overcurrent,, can cause the voltage rising on the 11 capacitor C 11 like this because the Uce voltage of the IGBT of Xi Menkang and Infineon increases (the Uce voltage of the IGBT of Mitsubishi and Ic electric current have one section negative differential resistance region) with the increase of electric current.When this voltage was elevated to Z4+0.7V voltage, the 4th voltage-stabiliser tube Z4 punctured and conducting (be conducting to the time that the 11 capacitor C 11 voltages are elevated to the 4th voltage-stabiliser tube Z4 puncture voltage from the 9th triode Q9 and be called blocking time), and the conducting electric current is to 10 chargings of the tenth capacitor C; When the tenth capacitor C 10 voltage during greater than the base bias voltage of the tenth triode Q10; The tenth triode Q10 conducting, after the conducting, the collector voltage step-down of the tenth triode Q10; Behind the step-down; The nearly equipotential of the 1st, 2 terminations of fiber optic transmitter U3 is not externally sent signal, and showing has fault (outwards sending signal during fault-free) to occur.Simultaneously; Behind the collector voltage step-down of the tenth triode Q10, drag down the base potential of the 7th integrated triode array Q7, the 8th integrated triode array Q8 through the 28 resistance R 28, the 14 diode D14; Make the 7th integrated triode array Q7, the 8th integrated triode array Q8 half-open logical; Thereby make that the 11 triode Q11 also is half-open logical, the output voltage step-down carries out soft shutoff to IGBT.After drive circuit was quoted fault, if turn-off drive signal (being the U4 input signal) rapidly, then the 9th triode Q9 can turn-off rapidly; The Uc end of the 9th triode Q9 is electronegative potential; Positive-negative-positive triode conducting among the 7th integrated triode array Q7, the 8th integrated triode array Q8, thereby the 12 triode Q12 conducting, then the Ue terminal voltage of the 12 triode Q12 is low; IGBT can turn-off immediately; But this moment is because the electric current among the IGBT is bigger, and shutoff immediately can cause the Uce overvoltage of IGBT and damage, so increased the circuit of the 22 resistance R the 22, the 23 resistance R 23, the 8th capacitor C 8 again; Make the 9th triode Q9 can the turn on delay certain hour; Thereby IGBT is carried out soft shutoff (U4 does not have drive signal at fiber optic receiver, the time since the tenth triode Q10 conducting to the nine triode Q9 turn-off fully, is called the soft turn-off time).
Those skilled in the art can carry out various remodeling and change to the present invention.Therefore, the present invention has covered various remodeling and the change in the scope that falls into appending claims and equivalent thereof.
Claims (1)
1. high-power IGBT drive circuit; It is characterized in that; It comprises the 7th integrated triode array, the 8th integrated triode array, the 9th triode, the tenth triode, the 11 triode, the 12 triode, the 22 resistance, the 23 resistance, the 24 resistance, the 26 resistance, the 28 resistance, the 31 resistance, the 33 resistance, the 39 resistance, the 42 resistance, the 14 diode, the 21 diode, the 24 diode, the 25 diode, the 26 diode, the 8th electric capacity, the tenth electric capacity, the 11 electric capacity, the 4th voltage-stabiliser tube; The 9th triode is connected with the 31 resistance; The 31 resistance is connected with the 7th integrated triode array, the 8th integrated triode array, the 14 diode; The 28 resistance is connected with the 14 diode; The 7th integrated triode array is connected with the 11 triode; The 8th integrated triode array is connected with the 12 triode; The 28 resistance is connected with the tenth triode, the 23 resistance; The 23 resistance is connected with the 22 resistance, the 8th electric capacity, and the 24 resistance is connected between the 7th integrated triode array and the 11 triode, and the 26 resistance is connected between the 8th integrated triode array and the 12 triode; The tenth triode is connected with the tenth electric capacity, the 11 electric capacity, the 4th voltage-stabiliser tube; The 11 electric capacity is connected with the 33 resistance, the 39 resistance, the 42 resistance, and the 21 diode is connected with the 11 triode, the 12 triode, and the 33 resistance is connected with the 24 diode, the 25 diode, the 26 diode; The 9th triode, the 7th integrated triode array and the 8th integrated triode array are the switching mode device, and the 11 triode, the 12 triode all are large power triodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210315334.9A CN102801408B (en) | 2012-08-30 | 2012-08-30 | High-power IGBT drive circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210315334.9A CN102801408B (en) | 2012-08-30 | 2012-08-30 | High-power IGBT drive circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102801408A true CN102801408A (en) | 2012-11-28 |
| CN102801408B CN102801408B (en) | 2015-05-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210315334.9A Expired - Fee Related CN102801408B (en) | 2012-08-30 | 2012-08-30 | High-power IGBT drive circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110267417A (en) * | 2019-06-10 | 2019-09-20 | 海洋王（东莞）照明科技有限公司 | A kind of explosion-proof circuit control device and explosion-proof lamp |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002369495A (en) * | 2001-06-12 | 2002-12-20 | Nissan Motor Co Ltd | Drive circuit for voltage-driven element |
| CN201270500Y (en) * | 2008-07-29 | 2009-07-08 | 南京华士电子科技有限公司 | Novel IGBT driver |
| CN102347603A (en) * | 2011-09-21 | 2012-02-08 | 深圳市英威腾电气股份有限公司 | Drive and protection circuit for IGBT (Insulated Gate Bipolar Transistor) |
-
2012
- 2012-08-30 CN CN201210315334.9A patent/CN102801408B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002369495A (en) * | 2001-06-12 | 2002-12-20 | Nissan Motor Co Ltd | Drive circuit for voltage-driven element |
| CN201270500Y (en) * | 2008-07-29 | 2009-07-08 | 南京华士电子科技有限公司 | Novel IGBT driver |
| CN102347603A (en) * | 2011-09-21 | 2012-02-08 | 深圳市英威腾电气股份有限公司 | Drive and protection circuit for IGBT (Insulated Gate Bipolar Transistor) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110267417A (en) * | 2019-06-10 | 2019-09-20 | 海洋王（东莞）照明科技有限公司 | A kind of explosion-proof circuit control device and explosion-proof lamp |
| CN110267417B (en) * | 2019-06-10 | 2021-04-16 | 海洋王（东莞）照明科技有限公司 | Explosion-proof loop control device and explosion-proof lamp |
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| Publication number | Publication date |
|---|---|
| CN102801408B (en) | 2015-05-13 |
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Granted publication date: 20150513 Termination date: 20160830 |