CN102801408A - High-power IGBT drive circuit - Google Patents

Abstract

The invention discloses a high-power IGBT driving circuit, which includes elements such as the seventh integrated triode array, the ninth triode is connected with the thirty-first resistor, the thirty-first resistor is connected with the seventh integrated triode array, the eighth integrated The triode array is connected to the fourteenth diode, the twenty-eighth resistor is connected to the fourteenth diode, the seventh integrated triode array is connected to the eleventh triode, the eighth integrated triode array is connected to the twelfth triode The twenty-eighth resistor is connected to the thirteenth tube and the twenty-third resistor, the twenty-third resistor is connected to the twenty-second resistor and the eighth capacitor, and the twenty-fourth resistor is connected to the seventh integrated triode Between the array and the eleventh triode, the twenty-sixth resistor is connected between the eighth integrated triode array and the twelfth triode, the thirteenth transistor is connected to the tenth capacitor, the eleventh capacitor, the fourth Regulator connection. The invention realizes optical fiber isolation, high switching frequency and strong driving ability.

Description

High power IGBT drive circuit

technical field

The invention relates to a driving circuit, in particular to a high-power IGBT driving circuit.

Background technique

The existing high-power IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) drive circuits are all imported drive circuit boards, with high prices, low switching frequency, and low drive power.

Contents of the invention

The technical problem to be solved by the present invention is to provide a high-power IGBT driving circuit, which realizes optical fiber isolation, high switching frequency and strong driving capability.

The present invention solves the above-mentioned technical problems through the following technical solutions: a high-power IGBT drive circuit, characterized in that it includes a seventh integrated triode array, an eighth integrated triode array, a ninth triode, a thirteenth Pole tube, eleventh triode tube, twelfth triode tube, twenty-second resistor, twenty-third resistor, twenty-fourth resistor, twenty-sixth resistor, twenty-eighth resistor, thirty One resistor, thirty-third resistor, thirty-ninth resistor, forty-second resistor, fourteenth diode, twenty-first diode, twenty-fourth diode, twenty-fifth dipole tube, the twenty-sixth diode, the eighth capacitor, the tenth capacitor, the eleventh capacitor, the fourth regulator tube, the ninth transistor is connected to the thirty-first resistor, the thirty-first resistor is connected to the seventh The integrated triode array, the eighth integrated triode array, the fourteenth diode connected, the twenty-eighth resistor connected to the fourteenth diode, the seventh integrated triode array connected to the eleventh triode, the eighth integrated triode The array is connected with the twelfth transistor, the twenty-eighth resistor is connected with the thirteenth transistor, the twenty-third resistor, the twenty-third resistor is connected with the twenty-second resistor, and the eighth capacitor, and the twenty-fourth The resistor is connected between the seventh integrated triode array and the eleventh triode, the twenty-sixth resistor is connected between the eighth integrated triode array and the twelfth triode, the thirteenth transistor is connected to the tenth capacitor, The eleventh capacitor is connected to the fourth regulator tube, the eleventh capacitor is connected to the thirty-third resistor, the thirty-ninth resistor, and the forty-second resistor, the twenty-first diode is connected to the eleventh triode , the twelfth triode connected, the thirty-third resistor connected with the twenty-fourth diode, the twenty-fifth diode, and the twenty-sixth diode, the ninth triode, the seventh integrated triode Both the array and the eighth integrated triode array are switching devices, and the eleventh triode and the twelfth triode are high-power triodes.

The positive and progressive effect of the present invention lies in that the present invention realizes soft shutdown, optical fiber isolation, high switching frequency, strong driving capability and short-circuit protection.

Description of drawings

FIG. 1 is a schematic diagram of a high-power IGBT driving circuit of the present invention.

Detailed ways

The preferred embodiments of the present invention are given below in conjunction with the accompanying drawings to describe the technical solution of the present invention in detail.

As shown in Figure 1, the high-power IGBT drive circuit of the present invention includes a seventh integrated triode array Q7, an eighth integrated triode array Q8, a ninth triode Q9, a thirteenth triode Q10, an eleventh triode Q11, Twelfth transistor Q12, twenty-second resistor R22, twenty-third resistor R23, twenty-fourth resistor R24, twenty-sixth resistor R26, twenty-eighth resistor R28, thirty-first resistor R31, The 33rd resistor R33, the 39th resistor R39, the 42nd resistor R42, the 14th diode D14, the 21st diode D21, the 24th diode D24, the 20th The fifth diode D25, the twenty-sixth diode D26, the eighth capacitor C8, the tenth capacitor C10, the eleventh capacitor C11, the fourth regulator tube Z4, the ninth triode Q9 and the thirty-first resistor R31 is connected, the thirty-first resistor R31 is connected with the seventh integrated triode array Q7, the eighth integrated triode array Q8, and the fourteenth diode D14, the twenty-eighth resistor R28 is connected with the fourteenth diode D14, and the The seven integrated triode array Q7 is connected to the eleventh triode Q11, the eighth integrated triode array Q8 is connected to the twelfth triode Q12, the twenty-eighth resistor R28 is connected to the thirteenth transistor Q10, and the twenty-third resistor R23 is connected, the twenty-third resistor R23 is connected with the twenty-second resistor R22 and the eighth capacitor C8, the twenty-fourth resistor R24 is connected between the seventh integrated triode array Q7 and the eleventh triode Q11, and the second The sixteenth resistor R26 is connected between the eighth integrated triode array Q8 and the twelfth triode Q12, the thirteenth transistor Q10 is connected with the tenth capacitor C10, the eleventh capacitor C11, and the fourth regulator tube Z4, and the The eleventh capacitor C11 is connected to the thirty-third resistor R33, the thirty-ninth resistor R39, and the forty-second resistor R42, and the twenty-first diode D21 is connected to the eleventh triode Q11 and the twelfth triode Q12 is connected, and the thirty-third resistor R33 is connected to the twenty-fourth diode D24, the twenty-fifth diode D25, and the twenty-sixth diode D26.

Optical fiber receiver U4 is a photoelectric signal conversion circuit, which can use R-2521Z optical fiber receiving module. When the optical fiber receiver receives the signal, the signal at the fourth terminal becomes low, and the base potential of the ninth triode Q9 becomes low, so that the Uce of the ninth triode is turned on, and the Uc potential of the ninth triode rises To the driving voltage, that is, VCC–Uce saturation voltage drop. The NPN transistors in the seventh integrated triode array Q7 and the eighth integrated triode array Q8 are saturated and turned on, the driving voltage VCC passes through the NPN transistors in the seventh integrated triode array Q7 and the eighth integrated triode array Q8, and the twenty-fourth The resistor R24 and the twenty-sixth resistor R26 are applied to the eleventh triode Q11 (the eleventh triode Q11 is a high-power transistor), so that the eleventh triode Q11 is turned on, and the eleventh triode The tube Q11 applies the driving voltage VCC to the gate IGBT_G of the IGBT (insulated gate bipolar transistor) through the twenty-first diode D21 to turn on the IGBT.

When the optical fiber receiver does not receive a signal, its fourth end is in a high-impedance state to the ground, and the base of the ninth transistor Q9 has no bias current, that is, the Uce of the ninth transistor Q9 is disconnected, and the ninth transistor Q9 The Uc potential is determined by the voltage division of the thirty-first resistor R31 and the forty-second resistor R42, the PNP transistors in the seventh integrated triode array Q7 and the eighth integrated triode array Q8 are saturated and turned on, and the negative bias voltage Vee passes through The twenty-fourth resistor R24 and the twenty-sixth resistor R26 are applied to the bases of the eleventh triode Q11 and the twelfth triode Q12 (the twelfth triode Q12 is a high-power triode), and the twelfth and third The transistor Q12 is turned on, and its emitter voltage is close to the negative bias voltage Vee, which is applied to the gate IGBT_G of the IGBT through the twenty-first diode D21 to turn off the IGBT.

The high-power IGBT drive circuit of the present invention adopts optical fiber isolation, and the isolation voltage is high. The ninth triode Q9, the seventh integrated triode array Q7 and the eighth integrated triode array Q8 are adopted. Since the ninth triode Q9, the seventh integrated triode array Both Q7 and the eighth integrated triode array Q8 are switching devices, and the carrier storage and recovery time is short, so the switching frequency is high and the anti-interference ability is strong.

The driving part of the IGBT adopts the eleventh triode Q11 and the twelfth triode Q12. Both the eleventh triode Q11 and the twelfth triode Q12 are high-power triodes. Because the driving current of the high-power triode is large, Therefore, the driving ability is strong.

When the optical fiber receiver receives the signal, the ninth triode Q9 is turned on, and the driving voltage VCC is applied to the seventh integrated triode array Q7 and the eighth integrated triode array Q8 through the Uce of the ninth triode Q9. The voltage passes through the twenty-sixth diode D26 and the thirty-third resistor R33 to charge the eleventh capacitor C11. When the voltage of the eleventh capacitor C11 reaches a certain voltage, the voltage reaches the collector terminal IGBT_C of the IGBT through the thirty-ninth resistor R39 , the twenty-fourth diode D24 and the twenty-fifth diode D25 . If the IGBT is over-current, since the voltage across Uce of the IGBT of Ximenkang and Infineon increases with the increase of the current (the Uce voltage of the IGBT of Mitsubishi and the Ic current have a negative resistance area), this will cause the eleventh capacitor C11 to voltage rises. When the voltage rises to Z4+0.7V voltage, the fourth voltage regulator tube Z4 breaks down and turns on (from the ninth transistor Q9 to the eleventh capacitor C11 voltage rises to the fourth voltage regulator tube Z4 strikes The time during which the voltage is passed through is called the blocking time), the conduction current charges the tenth capacitor C10, and when the voltage across the tenth capacitor C10 is greater than the base bias voltage of the thirteenth electrode Q10, the thirteenth electrode Q10 conducts After it is turned on, the collector voltage of the thirteenth electrode Q10 becomes lower, and after it becomes lower, the first and second ends of the optical fiber transmitter U3 are close to the same potential, and no signal is sent to the outside, indicating that there is a fault (when there is no fault send out a signal). At the same time, after the collector voltage of the thirteenth transistor Q10 becomes low, the fourteenth diode D14 pulls down the base potentials of the seventh integrated triode array Q7 and the eighth integrated triode array Q8 through the twenty-eighth resistor R28 , so that the seventh integrated triode array Q7 and the eighth integrated triode array Q8 are half-opened, so that the eleventh triode Q11 is also half-opened, the output voltage becomes lower, and the IGBT is softly turned off. When the drive circuit reports a failure, if the drive signal (i.e. U4 input signal) is quickly turned off, the ninth triode Q9 will be quickly turned off, the Uc terminal of the ninth triode Q9 is at low potential, and the seventh integrated triode The PNP transistors in the array Q7 and the eighth integrated transistor array Q8 are turned on, so that the twelfth triode Q12 is turned on, and the Ue terminal voltage of the twelfth triode Q12 is low, and the IGBT will be turned off immediately, but At this time, due to the large current in the IGBT, the immediate shutdown will cause the Uce of the IGBT to be overvoltage and damaged, so the circuit of the twenty-second resistor R22, the twenty-third resistor R23, and the eighth capacitor C8 is added to make the IGBT Nine triode Q9 can delay conduction for a certain period of time, so as to softly turn off the IGBT (there is no driving signal in the optical fiber receiver U4, from the time when the thirteenth transistor Q10 is turned on to the ninth transistor Q9 is completely turned off time, called the soft turn-off time).

Various modifications and changes can be made to the present invention by those skilled in the art. Thus, the present invention covers the modifications and changes that come within the scope of the appended claims and their equivalents.

Claims (1)

1. A high-power IGBT drive circuit, characterized in that it includes the seventh integrated triode array, the eighth integrated triode array, the ninth triode, the thirteenth triode, the eleventh triode, the twelfth triode Triode, twenty-second resistor, twenty-third resistor, twenty-fourth resistor, twenty-sixth resistor, twenty-eighth resistor, thirty-first resistor, thirty-third resistor, thirty-ninth resistor Resistor, forty-second resistor, fourteenth diode, twenty-first diode, twenty-fourth diode, twenty-fifth diode, twenty-sixth diode, eighth capacitor , the tenth capacitor, the eleventh capacitor, the fourth regulator tube, the ninth triode connected to the thirty-first resistor, the thirty-first resistor connected to the seventh integrated triode array, the eighth integrated triode array, the fourteenth The diode is connected, the twenty-eighth resistor is connected to the fourteenth diode, the seventh integrated triode array is connected to the eleventh triode, the eighth integrated triode array is connected to the twelfth triode, the twentieth The eighth resistor is connected to the thirteenth transistor and the twenty-third resistor, the twenty-third resistor is connected to the twenty-second resistor and the eighth capacitor, and the twenty-fourth resistor is connected to the seventh integrated triode array and the eleventh and third resistors. Between the transistors, the twenty-sixth resistor is connected between the eighth integrated triode array and the twelfth triode, the thirteenth transistor is connected with the tenth capacitor, the eleventh capacitor, and the fourth regulator tube, and the The eleventh capacitor is connected with the thirty-third resistor, the thirty-ninth resistor and the forty-second resistor, the twenty-first diode is connected with the eleventh triode and the twelfth triode, and the thirty-third The resistor is connected to the twenty-fourth diode, the twenty-fifth diode, and the twenty-sixth diode, and the ninth triode, the seventh integrated triode array and the eighth integrated triode array are all switching devices, The eleventh triode and the twelfth triode are all high-power triodes.