CN211579897U - Drive circuit and pump device using same - Google Patents
Drive circuit and pump device using same Download PDFInfo
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- CN211579897U CN211579897U CN202020137559.XU CN202020137559U CN211579897U CN 211579897 U CN211579897 U CN 211579897U CN 202020137559 U CN202020137559 U CN 202020137559U CN 211579897 U CN211579897 U CN 211579897U
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Abstract
A driving circuit comprises a first MOS tube, a second MOS tube, a first follow current circuit and a second follow current circuit, wherein one end of a first coil is connected with a source/drain electrode of the first MOS tube, one end of a second coil is connected with the source/drain electrode of the second MOS tube, the first follow current circuit comprises a first diode and a first follow current element, one end of the first diode is connected with one end of the first coil, the other end of the first diode is connected with one end of the first follow current element, the other end of the first follow current element is connected with the other end of the first coil, the second follow current circuit comprises a second diode and a second follow current element, one end of the second diode is connected with one end of the first coil, the other end of the first diode is connected with one end of the second follow current element, and the other end of the second follow current element is connected with the other end of the second coil. When the MOS tube is turned off, the current is guided back to the coil end through the diode and the follow current element, the risk that the MOS tube is broken down due to high voltage impact at two ends is reduced, and the service life of the MOS tube is prolonged.
Description
Technical Field
The utility model relates to a drive circuit and applied this drive circuit's pump unit.
Background
The pump device comprises a motor and a circuit board, and a driving circuit for driving the motor is printed on the circuit board. The driving circuit is provided with an MOS tube, and how to prolong the service life of the MOS tube is a problem to be improved.
SUMMERY OF THE UTILITY MODEL
An object of the present technical scheme is to provide a driving circuit and a pump apparatus having the same, which are beneficial to prolonging the service life of a MOS transistor.
In order to achieve the above purpose, the utility model adopts the following technical scheme:
a driving circuit can drive a first coil and a second coil, the driving circuit comprises a first MOS tube and a second MOS tube, one end of the first coil is connected with a source/drain electrode of the first MOS tube, one end of the second coil is connected with a source/drain electrode of the second MOS tube, the driving circuit further comprises a first follow current circuit and a second follow current circuit, the first follow current circuit comprises a first diode and a first follow current element, one end of the first diode is connected with one end of the first coil, the other end of the first diode is connected with one end of the first follow current element, and the other end of the first follow current element is connected with the other end of the first coil; the second freewheeling circuit comprises a second diode and a second freewheeling element, one end of the second diode is connected with one end of the first coil, the other end of the second diode is connected with one end of the second freewheeling element, and the other end of the second freewheeling element is connected with the other end of the second coil.
A pump device includes a first coil, a second coil, and a circuit board having the driving circuit.
This technical scheme's drive circuit and pump unit that has this drive circuit when first MOS pipe is turn-offed, lead the current back to first coil end through first diode and first afterflow component, reduce the risk that first MOS pipe is punctured because of both ends high voltage is strikeed, the life of first MOS pipe is prolonged, the second MOS pipe is also in the same way, reduce the risk that the second MOS pipe is punctured through second diode and second afterflow component with the current guide, extension second MOS pipe life.
Drawings
Fig. 1 is a circuit diagram of a first embodiment of a drive circuit;
FIG. 2 is a circuit diagram of a second embodiment of a drive circuit;
FIG. 3 is a circuit diagram of a third embodiment of a drive circuit;
fig. 4 is a circuit diagram of a fourth embodiment of the drive circuit.
Detailed Description
The invention will be further described with reference to the following drawings and specific embodiments:
referring to fig. 1, a circuit diagram of a first embodiment of a driving circuit is shown. The driving circuit is applied to a pump device, a motor of the pump device is a single-phase direct current motor, and the pump device is provided with two coils with opposite winding directions, namely a first coil M1 and a second coil M2. The driving circuit comprises a first MOS transistor MOS1, a second MOS transistor MOS2, a first follow current circuit and a second follow current circuit. One end of the first coil M1 is connected to the input end drain (D pole) of the first MOS transistor MOS1, or the first coil M1 is connected in series to the first MOS transistor MOS 1; one end of the second coil M2 is connected to the input end drain (D pole) of the second MOS transistor MOS2, or the second coil M2 is connected in series to the second MOS transistor MOS 2. The first free-wheeling circuit comprises a first diode D1 and a first free-wheeling element, one end of the first diode D1 is connected with one end of the first coil M1, the other end of the first diode D1 is connected with one end of the first free-wheeling element, and the other end of the first free-wheeling element is connected with the other end of the first coil M1, namely, the first free-wheeling circuit is connected with the first coil M1 in parallel, and the first diode D1 in the first free-wheeling circuit is connected with the first free-wheeling element in series; the second flywheel circuit includes a second diode D2 and a second flywheel element, one end of the second diode D2 is connected to one end of the second coil M2, the other end of the second diode D2 is connected to one end of the second flywheel element, and the other end of the second flywheel element is connected to the other end of the second coil M2, or in other words, the second flywheel circuit is connected in parallel to the second coil M2, and the second diode D2 in the second flywheel circuit is connected in series to the second flywheel element.
In this embodiment, the first freewheeling element is a first circuit unit, the first circuit unit is formed by connecting a first resistor R1 and a first capacitor C1 in parallel, the second freewheeling element is a second circuit unit, the second circuit unit is formed by connecting a second resistor R2 and a second capacitor C2 in parallel, and the first diode D1 and the second diode D2 are schottky diodes, but other types of diodes are also applicable. In addition, the driving circuit further includes a first transient voltage suppression diode TVS1 and a second transient voltage suppression diode TVS2, one end of the first transient voltage suppression diode TVS1 is connected to the drain (D pole) of the first MOS transistor MOS1, the other end of the first transient voltage suppression diode TVS1 is connected to the source (S pole) of the first MOS transistor MOS1, one end of the second transient voltage suppression diode TVS2 is connected to the drain (D pole) of the second MOS transistor MOS2, the other end of the second transient voltage suppression diode TVS2 is connected to the source (S pole) of the second MOS transistor MOS2, and it can also be said that the first transient voltage suppression diode TVS1 is connected in parallel to the first MOS transistor MOS1, and the second transient voltage suppression diode is connected in parallel to the second MOS transistor MOS 2.
The first MOS transistor MOS1 and the second MOS transistor MOS2 may be N-channel field effect transistors or P-channel field effect transistors, where for an N-channel field effect transistor, the input terminal is a drain and the output terminal is a source, and for a P-channel field effect transistor, the input terminal is a source and the output terminal is a drain. Taking the N-channel type field effect transistor shown in fig. 1 as an example, one end of the first coil M1 is connected to the power supply V _ Motor, the other end of the first coil M1 is connected to the input end drain of the first MOS transistor MOS1, the output end source of the first MOS transistor is connected to the ground resistor R3, and the ground resistor R3 is grounded to GND (GND in the figure represents ground); the anode of the first diode D1 is connected with one end of the first coil M1 far away from the power supply V _ Motor, the cathode of the first diode D1 is connected with one end of the first circuit unit, and the other end of the first circuit unit is connected with one end of the first coil M1 near to the power supply V _ Motor; a first transient voltage suppression diode TVS1 is connected between the drain and the source of the first MOS transistor MOS1, and the first transient voltage suppression diode TVS1 is a bidirectional transient voltage suppression diode. One end of the second coil M2 is connected to one end of the first coil M1 close to the power supply V _ Motor, that is, the second coil M2 is connected to the power supply V _ Motor, the other end of the second coil M2 is connected to the drain of the second MOS transistor MOS2, the source of the second MOS transistor MOS2 is connected to the source of the first MOS transistor MOS1, and the two are connected to the ground resistor R3; the anode of the second diode D2 is connected with one end of the second coil M2 far away from the power supply V _ Motor, the cathode of the second diode D2 is connected with one end of the second circuit unit, and the other end of the second circuit unit is connected with one end of the second coil M2 near to the power supply V _ Motor; a second TVS2 is connected between the drain and the source of the second MOS transistor MOS2, and the second TVS2 is a bidirectional TVS. If the first and second MOS transistors are P-channel type field effect transistors, the drain of the output end of the MOS transistor is grounded, the source of the input end of the MOS transistor is connected with the corresponding coil, and the rest are the same as the N-channel type field effect transistors.
When the first MOS transistor MOS1 is turned on, a current flows from the power supply V _ Motor end through the first coil M1, the first MOS transistor MOS1, and the ground resistor R3 in sequence, and then is grounded to GND, thereby forming a loop. When the first MOS transistor MOS1 is turned off, the current flowing through the first coil M1 does not suddenly change, if no freewheeling circuit exists, the two ends of the first MOS transistor MOS1 are impacted by high voltage and broken down, and through the first freewheeling circuit formed by the first diode D1 and the first circuit unit, the current flowing through the first coil M1 passes through the first diode D1 and the first circuit unit is timely guided back to the power supply V _ Motor, so that the first MOS transistor is protected, and the service life of the first MOS transistor is prolonged. The first diode D1 is provided to prevent the first capacitor C1 from discharging and kicking back to the first MOS transistor MOS1 and the first coil M1, which acts as a cut-off. Similarly, when the second MOS transistor MOS2 is turned on, the current flows through the second coil M2, the second MOS transistor MOS2, and the ground resistor R3 in sequence, and then is grounded to GND, thereby forming a loop. When the second MOS transistor MOS2 is turned off, the current flowing through the second coil M1 passes through the second diode D2 and the second circuit unit in sequence and is led back to the power supply V _ Motor, so as to protect the second MOS transistor. The second diode D2 prevents the second capacitor C2 from discharging and kicking back to the second MOS transistor MOS2 and the second coil M2, which acts as a cut-off.
The transient voltage suppression diode, referred to as TVS transistor for short, includes a unidirectional transient voltage suppression diode and a bidirectional transient voltage suppression diode, in this embodiment, both the first transient voltage suppression diode and the second transient voltage suppression diode are bidirectional transient voltage suppression diodes, and can absorb positive and negative pulses, in this embodiment, not only can absorb pulse voltages generated when the first and second MOS transistors connected in parallel are switched, but also can absorb surge voltage input from the power supply V _ Motor, so as to protect the MOS transistors connected correspondingly.
In addition, the driving circuit of this embodiment may further include a first MOS transistor driving circuit 110 and a second MOS transistor driving circuit 120. The output end of the first MOS transistor driving circuit 110 is connected with a gate (G pole) of the first MOS transistor MOS1, and the first MOS transistor driving circuit 110 drives the first MOS transistor to be turned on or off; the output end of the second MOS transistor driving circuit 120 is connected to the gate (G pole) of the second MOS transistor MOS2, and the second MOS transistor driving circuit 120 drives the second MOS transistor to turn on or turn off.
The first and second MOS transistor driving circuits 110 and 120 are conventional technologies, and this embodiment provides a feasible circuit diagram of the first and second MOS transistor driving circuits 110 and 120, but is not limited thereto. In this embodiment, the first MOS transistor driving circuit 110 includes resistors R4-R10, transistors Q1-Q3, and a capacitor C5, and the transistors Q1-Q3 are all NPN-type transistors in fig. 1, and may also be PNP-type transistors. One end of the resistor R4 is connected with the power supply VC1, the other end of the resistor R4 is connected with one end of the resistor R5, and the other end of the resistor R5 is grounded GND to form a loop. The input terminal FTM2_ CH5 of the first MOS transistor driver circuit 110 is electrically connected to a connection line connecting the resistor R4 and the resistor R5, where the connection point is denoted as a first connection point D1, the first connection point D1 is connected to one terminal of a resistor R7, and the other terminal of the resistor R7 is connected to the base of the transistor Q2. One end of a resistor R6 is connected between a connecting line of a first connecting point D1 and a resistor R7, the other end of the resistor R6 is connected with the base electrode of a triode Q1, the emitting electrode of the triode Q1 is grounded GND, the collecting electrode of the triode Q1 is connected with the base electrode of the triode Q3, the collecting electrode of the triode Q3 is connected with a power supply VC1, the emitting electrode of the triode Q3 is connected with the collecting electrode of the triode Q2, and the emitting electrode of the triode Q2 is grounded GND. One end of the resistor R8 is respectively connected with the collector of the triode Q1 and the base of the triode Q3, and the other end of the resistor R8 is connected with the collector of the triode Q3. One end of a resistor R9 is connected with a collector of the triode Q2 and an emitter of the triode Q3 respectively, the other end of the resistor R9 is connected with a grid of the first MOS tube, one end of an RC circuit formed by connecting the resistor R10 and a capacitor C5 in parallel is connected between a resistor R9 and a grid connecting line of the first MOS tube MOS1, and the other end of the RC circuit is connected with a source of the first MOS tube and is connected to the end of the grounding resistor R3 together. The second MOS transistor driving circuit 120 includes resistors R11-R17, transistors Q4-Q6, and a capacitor C6, and is connected in the same manner as the first MOS transistor driving circuit 110, which will not be described herein.
When the input end FTM2_ CH5 of the first MOS transistor driving circuit is at a high level, the triodes Q1 and Q2 are turned on, the triode Q3 connected with the triode Q1 is turned on and then is turned off, the first MOS transistor driving circuit outputs a low level to the gate of the first MOS transistor, and the first MOS transistor MOS1 is turned off. When the input terminal FTM2_ CH5 is at a low level, the transistors Q1 and Q2 are turned off, the transistor Q3 is turned on, the first MOS transistor driving circuit outputs a high level to the gate of the first MOS transistor MOS1, and the first MOS transistor MOS1 is turned on. The second MOS tube driving circuit and the first MOS tube driving circuit have the same working principle, and the second MOS tube driving circuit and the first MOS tube driving circuit respectively control the on-off of the second MOS tube and the first MOS tube. The driving circuit in fig. 1 further includes filter capacitors C9 and C10 for filtering, and capacitors C9 and C10 are connected in parallel, and after parallel connection, one end of each capacitor is connected to the power supply V _ Motor, and the other end of each capacitor is grounded GND.
Referring to fig. 2, fig. 2 is a circuit diagram of a second embodiment of the driving circuit. The same circuit elements in this embodiment as in the first embodiment are labeled the same. Different from fig. 1, in this embodiment, the first flywheel circuit and the second flywheel circuit share the same flywheel device, the shared flywheel device is denoted as a third circuit unit, the third circuit unit is formed by connecting a third capacitor Cx in parallel with a third resistor Rx, and the third circuit unit is connected in series with both the first diode D1 and the second diode D2. The anode of the first diode D1 is connected with one end of the first coil M1, which is far away from the power supply V _ Motor, the cathode of the first diode D1 is connected with one end of the third circuit unit, and the other end of the third circuit unit is connected with one end of the first coil M1, which is close to the power supply V _ Motor; the anode of the second diode D2 is connected to the end of the second coil M2 away from the power supply V _ Motor, the cathode of the second diode D2 is connected to the end of the third circuit unit connected to the cathode of the first diode D1, and the end of the third circuit unit not connected to the cathode of the first diode D1 is connected to the end of the second coil M2 close to the power supply V _ Motor, which is the same as the first embodiment.
When the first MOS transistor MOS1 is turned off, the current flowing through the first coil M1 is led back to the power supply V _ Motor through the first diode D1 and the third circuit unit in time, so as to protect the first MOS transistor. When the second MOS transistor MOS2 is turned off, the current flowing through the second coil M2 is led back to the power supply V _ Motor through the second diode D2 and the third circuit unit in sequence, so as to protect the second MOS transistor. Compared with the first embodiment, the freewheeling element of the present embodiment shares the third circuit unit, so that a circuit unit formed by connecting a capacitor and a resistor in parallel is omitted, and the cost can be reduced.
Referring to fig. 3, fig. 3 is a circuit diagram of a third embodiment of the driving circuit. The same circuit elements in this embodiment as in the first embodiment are labeled the same. The freewheel circuit of the present embodiment also includes a first freewheel circuit, a second freewheel circuit, and differs from the first embodiment in that the first circuit unit in the first freewheel circuit is replaced by a third transient voltage suppression diode TVS3, and the second circuit unit of the second freewheel circuit is replaced by a fourth transient voltage suppression diode TVS 4; the first TVS1 connected in parallel with the first MOS transistor and the second TVS2 connected in parallel with the second MOS transistor are omitted in this embodiment, and the rest is the same as the first embodiment. The third TVS3 and the fourth TVS4 are both bidirectional TVS diodes.
When the first MOS transistor MOS1 is turned on, a current flows through the first coil M1, the first MOS transistor MOS1, and the ground resistor R3 in sequence, and then is grounded to GND, thereby forming a loop. When the first MOS transistor MOS1 is turned off, the current flowing through the first coil M1 sequentially passes through the first diode D1 and the third TVS3, and the current is led back to the power supply V _ Motor to form a freewheeling circuit to protect the first MOS transistor. Similarly, when the second MOS transistor MOS2 is turned on, the current flows through the second coil M2, the second MOS transistor MOS2, and the ground resistor R3 in sequence, and then is grounded to GND, thereby forming a loop. When the second MOS transistor MOS2 is turned off, the current flowing through the second coil M2 passes through the second diode D2 and the fourth TVS4 in sequence, and is led back to the power supply V _ Motor.
The third TVS3 and the first diode D1 form a first freewheeling circuit, the fourth TVS4 and the second diode D2 form a second freewheeling circuit, and the third and fourth TVS play a role of absorbing the surge voltage of the power supply V _ Motor and protecting the MOS transistors besides the freewheeling function, so that the first TVS1 and the second TVS2 connected between the source and the drain of the two MOS transistors in the first embodiment can be omitted.
Compared with the first embodiment, the present embodiment saves components (the first capacitor C1, the second capacitor C2, the first resistor R1, and the second resistor R2), and reduces the cost. In addition, through experiments, the freewheeling times of the third TVS3 and the fourth TVS4 are shorter than those of the first and second circuit units of the previous embodiment; the temperature rise of the third transient voltage suppression diode TVS3 and the fourth transient voltage suppression diode TVS4 is small, and even when the ambient temperature is 120 ℃, the temperature of the third transient voltage suppression diode TVS3 and the fourth transient voltage suppression diode TVS4 after the temperature rise does not exceed the maximum temperature allowed by the transient voltage suppression diodes, so that the circuit can normally operate.
Referring to fig. 4, fig. 4 is a circuit diagram of a fourth embodiment of the driving circuit. The same circuit elements in this embodiment as in the third embodiment are labeled the same. Unlike the third embodiment, the first and second freewheel circuits share the same TVS 5. The first flywheel circuit comprises a first diode D1, a fifth TVS5 which is a bidirectional TVS, and the second flywheel circuit comprises a second diode D2, a fifth TVS 5. The first MOS transistor MOS1 and the second MOS transistor MOS2 are N-channel field effect transistors, one end of a first coil M1 is connected with a power supply V _ Motor, the other end of the first coil M1 is connected with the drain electrode of the first MOS transistor MOS1, the source electrode of the first MOS transistor MOS1 is connected with a grounding resistor R3, and the grounding resistor R3 is grounded GND; the anode of the first diode D1 is connected to one end of the first coil M1, which is far from the power supply V _ Motor, the cathode of the first diode D1 is connected to one end of the fifth transient voltage suppression diode TVS5, and the other end of the fifth transient voltage suppression diode TVS5 is connected to one end of the first coil M1, which is close to the power supply V _ Motor; one end of the second coil M2 is electrically connected with one end of the first coil M1 close to the power supply V _ Motor, namely the second coil M2 is connected with the power supply V _ Motor, the other end of the second coil M2 is connected with the drain electrode of the second MOS tube MOS2, and the source electrode of the second MOS tube MOS2 is connected with the source electrode of the first MOS tube MOS1 and then connected with the grounding resistor R3; the anode of the second diode D2 is connected to the end of the second coil M2 away from the power supply V _ Motor, the cathode of the second diode D2 is electrically connected to the end of the fifth transient voltage suppression diode TVS5 connected to the cathode of the first diode D1, and the end of the fifth transient voltage suppression diode TVS5 not connected to the cathode of the first diode is connected to the end of the second coil M2 close to the power supply V _ Motor.
When the first MOS transistor MOS1 is turned on, a current flows through the first coil M1, the first MOS transistor MOS1, and the ground resistor R3 in sequence, and then is grounded to GND, thereby forming a loop. When the first MOS transistor MOS1 is turned off, the current flowing through the first coil M1 passes through the first diode D1 and the fifth TVS5, and the current is led back to the power supply V _ Motor to form a freewheeling circuit to protect the first MOS transistor. Similarly, when the second MOS transistor MOS2 is turned on, the current flows through the second coil M2, the second MOS transistor MOS2, and the ground resistor R3 in sequence, and then is grounded to GND, thereby forming a loop. When the second MOS transistor MOS2 is turned off, the current flowing through the second coil M2 is led back to the power supply V _ Motor through the second diode D2 and the fifth TVS 5.
Different from the third embodiment in that the two free-wheeling circuits respectively use a transient voltage suppression diode, the first free-wheeling circuit and the second free-wheeling circuit share the fifth transient voltage suppression diode TVS5, and a transient voltage suppression diode is omitted, so that the cost is further reduced.
In addition, this technical scheme still provides a pump unit, and this pump unit includes first coil, second coil, circuit board, has drive circuit on the circuit board, and drive circuit can be any one of embodiment one to five drive circuit.
It should be noted that: the above embodiments are only used for illustrating the present invention and not for limiting the technical solutions described in the present invention, and although the present invention has been described in detail with reference to the above embodiments, it should be understood by those skilled in the art that the technical solutions and modifications thereof without departing from the spirit and scope of the present invention can be modified or replaced by other technical solutions and modifications by those skilled in the art.
Claims (11)
1. A drive circuit capable of driving a first coil and a second coil, characterized in that: the driving circuit comprises a first MOS tube and a second MOS tube, one end of the first coil is connected with a source electrode/drain electrode of the first MOS tube, one end of the second coil is connected with a source electrode/drain electrode of the second MOS tube, the driving circuit further comprises a first follow current circuit and a second follow current circuit, the first follow current circuit comprises a first diode and a first follow current element, one end of the first diode is connected with one end of the first coil, the other end of the first diode is connected with one end of the first follow current element, the other end of the first follow current element is connected with the other end of the first coil, the second follow current circuit comprises a second diode and a second follow current element, one end of the second diode is connected with one end of the first coil, and the other end of the second diode is connected with one end of the second follow current element, the other end of the second freewheeling element is connected to the other end of the second coil.
2. The drive circuit according to claim 1, wherein: the driving circuit further comprises a first transient voltage suppression diode and a second transient voltage suppression diode, one end of the first transient voltage suppression diode is connected with the drain electrode of the first MOS tube, the other end of the first transient voltage suppression diode is connected with the source electrode of the first MOS tube, one end of the second transient voltage suppression diode is connected with the drain electrode of the second MOS tube, and the other end of the second transient voltage suppression diode is connected with the source electrode of the second MOS tube.
3. A drive circuit as claimed in claim 1 or 2, characterized in that: the first follow current element is a first circuit unit, the first circuit unit is formed by connecting a first resistor and a first capacitor in parallel, the second follow current element is a second circuit unit, and the second circuit unit is formed by connecting a second resistor and a second capacitor in parallel.
4. A drive circuit as claimed in claim 1 or 2, characterized in that: the first follow current element and the second follow current element share a third circuit unit, the third circuit unit is formed by connecting a third resistor and a third capacitor in parallel, the anode of the first diode is connected with one end of the first coil, the cathode of the first diode is connected with one end of the third circuit unit, and the other end of the third circuit unit is connected with the other end of the first coil; the anode of the second diode is connected with one end of the second coil, the cathode of the second diode is connected with one end of the third circuit unit, which is connected with the cathode of the first diode, and one end of the third circuit unit, which is not connected with the cathode of the first diode, is connected with the other end of the second coil.
5. The drive circuit of claim 1, wherein: the first freewheeling element is a third transient voltage suppression diode, the second freewheeling element is a fourth transient voltage suppression diode, and the source and/or the drain of the first MOS transistor or the second MOS transistor are not connected with the transient voltage suppression diode.
6. The drive circuit of claim 1, wherein: the first flywheel element and the second flywheel element share a fifth transient voltage suppression diode, the anode of the first diode is connected with one end of the first coil, the cathode of the first diode is connected with one end of the fifth transient voltage suppression diode, and the other end of the fifth transient voltage suppression diode is connected with the other end of the first coil; the anode of the second diode is connected with one end of the second coil, the cathode of the second diode is connected with one end of the fifth transient voltage suppression diode connected with the cathode of the first diode, and one end of the fifth transient voltage suppression diode not connected with the cathode of the first diode is connected with the other end of the second coil; the source electrode and/or the drain electrode of the first MOS tube or the second MOS tube are not connected with the transient voltage suppression diode.
7. A drive circuit as claimed in claim 3, wherein: one end of the first coil is connected with a power supply, the other end of the first coil is connected with the input end of the first MOS tube, the output end of the first MOS tube is connected with a grounding resistor, and the grounding resistor is grounded; one end of the second coil is connected with the power supply, the other end of the second coil is connected with the input end of the second MOS tube, and the output end of the second MOS tube is connected with the grounding resistor and then grounded; the anode of the first diode is connected with one end of the first coil, which is far away from the power supply, the cathode of the first diode is connected with one end of the first circuit unit, and the other end of the first circuit unit is connected with one end of the first coil, which is close to the power supply; the positive electrode of the second diode is connected with one end, far away from the power supply, of the second coil, the negative electrode of the second diode is connected with one end of the second circuit unit, and the other end of the second circuit unit is connected with one end, close to the power supply, of the second coil.
8. The drive circuit of claim 4, wherein: one end of the first coil is connected with a power supply, the other end of the first coil is connected with the input end of the first MOS tube, the output end of the first MOS tube is connected with a grounding resistor, and the grounding resistor is grounded; one end of the second coil is connected with the power supply, the other end of the second coil is connected with the input end of the second MOS tube, and the output end of the second MOS tube is connected with the grounding resistor and then grounded; the anode of the first diode is connected with one end of the first coil, which is far away from the power supply, the cathode of the first diode is connected with one end of the third circuit unit, and the other end of the third circuit unit is connected with one end of the first coil, which is close to the power supply; the anode of the second diode is connected with one end of the second coil, which is far away from the power supply, and one end of the third circuit unit, which is not connected with the cathode of the first diode, is connected with one end of the second coil, which is close to the power supply.
9. The drive circuit of claim 5, wherein: one end of the first coil is connected with a power supply, the other end of the first coil is connected with the input end of the first MOS tube, the output end of the first MOS tube is connected with a grounding resistor, and the grounding resistor is grounded; one end of the second coil is connected with the power supply, the other end of the second coil is connected with the input end of the second MOS tube, and the output end of the second MOS tube is connected with the grounding resistor and then grounded; the anode of the first diode is connected with one end of the first coil, which is far away from the power supply, the cathode of the first diode is connected with one end of the third transient voltage suppression diode, and the other end of the third transient voltage suppression diode is connected with one end of the first coil, which is close to the power supply; the positive electrode of the second diode is connected with one end, far away from the power supply, of the second coil, the negative electrode of the second diode is connected with one end of the fourth transient voltage suppression diode, and the other end of the fourth transient voltage suppression diode is connected with one end, close to the power supply, of the second coil.
10. The drive circuit of claim 6, wherein: one end of the first coil is connected with a power supply, the other end of the first coil is connected with the input end of the first MOS tube, the output end of the first MOS tube is connected with a grounding resistor, and the grounding resistor is grounded; one end of the second coil is connected with the power supply, the other end of the second coil is connected with the input end of the second MOS tube, and the output end of the second MOS tube is connected with the grounding resistor and then grounded; the anode of the first diode is connected with one end of the first coil, which is far away from the power supply, and the other end of the fifth transient voltage suppression diode is connected with one end of the first coil, which is close to the power supply; the anode of the second diode is connected with one end of the second coil, which is far away from the power supply, and one end of the fifth transient voltage suppression diode, which is not connected with the cathode of the first diode, is connected with one end of the second coil, which is close to the power supply.
11. A pump apparatus, the pump apparatus comprising a first coil, a second coil and a circuit board, characterized in that: the circuit board has a driving circuit according to any one of claims 1 to 10.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921819656 | 2019-10-28 | ||
| CN2019218196560 | 2019-10-28 |
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| CN211579897U true CN211579897U (en) | 2020-09-25 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20220337150A1 (en) * | 2021-04-20 | 2022-10-20 | Richtek Technology Corporation | Spike suppression circuit and power converter and control method thereof |
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2020
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20220337150A1 (en) * | 2021-04-20 | 2022-10-20 | Richtek Technology Corporation | Spike suppression circuit and power converter and control method thereof |
| US11489439B1 (en) * | 2021-04-20 | 2022-11-01 | Richtek Technology Corporation | Spike suppression circuit and power converter and control method thereof |
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Effective date of registration: 20201202 Address after: 312500 Technology Center building of Sanhua Industrial Park, Meizhu Town, Xinchang County, Shaoxing City, Zhejiang Province Patentee after: ZHEJIANG SANHUA INTELLIGENT CONTROLS Co.,Ltd. Address before: 310018 No. 12, No. 289-2, Xiasha Economic Development Zone, Hangzhou, Zhejiang Patentee before: Hangzhou Sanhua Research Institute Co.,Ltd. |