CN211126439U - High-power semiconductor laser drive protection circuit - Google Patents
High-power semiconductor laser drive protection circuit Download PDFInfo
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- CN211126439U CN211126439U CN201922079457.7U CN201922079457U CN211126439U CN 211126439 U CN211126439 U CN 211126439U CN 201922079457 U CN201922079457 U CN 201922079457U CN 211126439 U CN211126439 U CN 211126439U
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Abstract
The utility model provides a high-power semiconductor laser drive protection circuit, the first electric capacity both ends are connected with second voltage input end, first resistance respectively, the second electric capacity both ends are connected with second voltage input end, third resistance respectively, the other end of third resistance is connected with the S utmost point of MOS pipe; the D pole of the MOS tube is connected with one end of the high-power semiconductor laser, and the G pole of the MOS tube is connected with one end of the second voltage-stabilizing tube; the first voltage input end is connected with one end of a fifth resistor, and the other end of the fifth resistor is connected with a second voltage-regulator tube; the first voltage stabilizer is connected with the high-power semiconductor laser; and the second resistor and the third capacitor are connected in parallel with a circuit arranged between the first voltage-regulator tube and the high-power semiconductor laser. The utility model discloses an adjustment MOS manages gate-level voltage to realize making the stable controllable work of high-power laser to high-power device constant current drive.
Description
Technical Field
The utility model particularly relates to a high-power semiconductor laser drive protection circuit.
Background
The existing high-power light-emitting device has two driving modes, namely, a scheme 1 that a triode structure constant current source is adopted to drive the light-emitting device to emit light; and 2, the integrated circuit is adopted to output constant current to drive the light-emitting device to emit light. However, the above scheme still has the following problems: scheme 1, generally applicable to low power light emitting device driving; scheme 2, control circuit complexity and high cost.
SUMMERY OF THE UTILITY MODEL
In view of this, the utility model provides a high-power semiconductor laser drives protection circuit, the utility model discloses an adjustment MOS manages gate-level voltage to realize making the stable controllable work of high-power laser to high-power device constant current drive.
The technical scheme of the utility model is that:
a high-power semiconductor laser drive protection circuit is characterized by comprising a first voltage regulator tube D1, a high-power semiconductor laser D2, a second voltage regulator tube D3, an MOS tube U1, a first voltage input end CONTRO L, a second voltage input end VCC, a first resistor R1, a first capacitor C1, a second capacitor C2, a second resistor R2, a third capacitor C3, a third resistor R3, a fourth resistor R4 and a fifth resistor R5.
Furthermore, two ends of the first capacitor are respectively connected with a second voltage input end and the first resistor, two ends of the second capacitor are respectively connected with the second voltage input end and the third resistor, and the other end of the third resistor is connected with the S pole of the MOS tube; the D pole of the MOS tube is connected with one end of the high-power semiconductor laser, and the G pole of the MOS tube is connected with one end of the second voltage-stabilizing tube.
Further, the first voltage input end is connected with one end of a fifth resistor, and the other end of the fifth resistor is connected with a second voltage regulator tube.
Further, the first voltage stabilizer is connected with the high-power semiconductor laser.
The utility model discloses in, CONTROLLING MOS pipe G utmost point voltage by stabilivolt D3 and R5, make the MOS pipe be in the size that incompletely open mode comes control MOS pipe S utmost point current, make high-power semiconductor laser D2 steady operation.
The VCC end forms the protection part of the high-power laser through the discrete devices C3+ R1+ R3+ D1. After energy storage, voltage division and filtering of the resistance-capacitance device, voltage is stabilized at two ends of the high-power semiconductor laser D2, the voltage-stabilizing tube D1 does not work at the moment, and when high voltage appears in the circuit suddenly, the D1 starts to work at the moment, and high voltage is discharged to protect the circuit.
Furthermore, the second resistor and the third capacitor are connected in parallel with a circuit arranged between the first voltage regulator tube and the high-power semiconductor laser.
Further, the first voltage input end is a rectangular wave voltage input end.
Further, the second voltage input terminal is a direct current voltage input terminal.
Furthermore, the fourth resistor is respectively connected with the fifth resistor and the second voltage regulator tube.
Furthermore, the other end of the second voltage regulator tube is connected with one end of a third resistor.
The utility model discloses a concrete working process as follows:
1. the control L terminal inputs rectangular wave voltage with specific frequency, and the VCC terminal inputs constant direct current voltage.
2. The direct current voltage at the VCC end provides a steady-state working power supply for the high-power laser after the energy storage, filtering and voltage division of C1, C2, C3, R1 and R3.
3. When the ContRO L end is in high level state, the MOS tube can be in incomplete conduction state by calculating and selecting proper divider resistor R5 and voltage stabilizing diode D3, and Ids is controlled, thereby achieving the purpose of controlling the high-power laser If.
4. When the ContRO L end is turned to the low level state by the high level, the MOS pipe is closed, the junction capacitance charge of the MOS pipe can be discharged through R4 at the moment, the influence of charge retention on the switching performance is prevented, meanwhile, the high-power laser stops working, the reverse voltage caused by parasitic inductance of the negative electrode of the high-power laser can be discharged through D1 and R2, and the laser is prevented from being damaged by reverse overvoltage.
The utility model discloses an adjustment MOS manages gate-level voltage to realize making the stable controllable work of high-power laser to high-power device constant current drive.
The beneficial effects of the utility model reside in that:
1. protects the expensive high-power laser and prolongs the service life of the high-power laser.
2. The current of the high-power laser is controllable, and the high-power laser can be suitable for different high-power lasers by adjusting the G-pole voltage of the MOS tube.
3. The MOS pipe has replaced a plurality of triodes and integrated circuit, has reduced the circuit cost, lets the circuit become more light, the product installation debugging of being convenient for.
Drawings
Fig. 1 is a schematic diagram of a driving protection circuit of the present invention;
description of the symbols:
the high-power semiconductor laser comprises a first voltage regulator tube D1, a high-power semiconductor laser D2, a second voltage regulator tube D3, an MOS tube U1, a first voltage input end CONTRO L, a second voltage input end VCC, a first resistor R1, a first capacitor C1, a second capacitor C2, a second resistor R2, a third capacitor C3, a third resistor R3, a fourth resistor R4 and a fifth resistor R5.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Examples
A high-power semiconductor laser drive protection circuit is characterized by comprising a first voltage regulator tube D1, a high-power semiconductor laser D2, a second voltage regulator tube D3, an MOS tube U1, a first voltage input end CONTRO L, a second voltage input end VCC, a first resistor R1, a first capacitor C1, a second capacitor C2, a second resistor R2, a third capacitor C3, a third resistor R3, a fourth resistor R4 and a fifth resistor R5.
Furthermore, two ends of the first capacitor are respectively connected with a second voltage input end and the first resistor, two ends of the second capacitor are respectively connected with the second voltage input end and the third resistor, and the other end of the third resistor is connected with the S pole of the MOS tube; the D pole of the MOS tube is connected with one end of the high-power semiconductor laser, and the G pole of the MOS tube is connected with one end of the second voltage-stabilizing tube.
Further, the first voltage input end is connected with one end of a fifth resistor, and the other end of the fifth resistor is connected with a second voltage regulator tube.
Further, the first voltage stabilizer is connected with the high-power semiconductor laser.
The utility model discloses in, CONTROLLING MOS pipe G utmost point voltage by stabilivolt D3 and R5, make the MOS pipe be in the size that incompletely open mode comes control MOS pipe S utmost point current, make high-power semiconductor laser D2 steady operation.
The VCC end forms the protection part of the high-power laser through the discrete devices C3+ R1+ R3+ D1. After energy storage, voltage division and filtering of the resistance-capacitance device, voltage is stabilized at two ends of the high-power semiconductor laser D2, the voltage-stabilizing tube D1 does not work at the moment, and when high voltage appears in the circuit suddenly, the D1 starts to work at the moment, and high voltage is discharged to protect the circuit.
Furthermore, the second resistor and the third capacitor are connected in parallel with a circuit arranged between the first voltage regulator tube and the high-power semiconductor laser.
Further, the first voltage input end is a rectangular wave voltage input end.
Further, the second voltage input terminal is a direct current voltage input terminal.
Furthermore, the fourth resistor is respectively connected with the fifth resistor and the second voltage regulator tube.
Furthermore, the other end of the second voltage regulator tube is connected with one end of a third resistor.
It is obvious to a person skilled in the art that the invention is not restricted to details of the above-described exemplary embodiments, but that it can be implemented in other specific forms without departing from the spirit or essential characteristics of the invention. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art. It should be noted that the technical features not described in detail in the present invention can be implemented by any prior art.
Claims (7)
1. A high-power semiconductor laser drive protection circuit is characterized by comprising a first voltage regulator tube, a high-power semiconductor laser, a second voltage regulator tube, an MOS tube, a first voltage input end, a second voltage input end, a first resistor, a first capacitor, a second resistor, a third capacitor, a third resistor, a fourth resistor and a fifth resistor;
two ends of the first capacitor are respectively connected with the second voltage input end and the first resistor, two ends of the second capacitor are respectively connected with the second voltage input end and the third resistor, and the other end of the third resistor is connected with the MOS tube; the MOS tube is connected with one end of the high-power semiconductor laser, and the MOS tube is connected with one end of the second voltage-stabilizing tube;
the first voltage input end is connected with one end of a fifth resistor, and the other end of the fifth resistor is connected with a second voltage-regulator tube;
the first voltage stabilizer is connected with the high-power semiconductor laser;
and the second resistor and the third capacitor are connected in parallel with a circuit arranged between the first voltage-regulator tube and the high-power semiconductor laser.
2. The high power semiconductor laser driving protection circuit according to claim 1, wherein the first voltage input terminal is a rectangular wave voltage input terminal.
3. The high power semiconductor laser drive protection circuit of claim 1, wherein the second voltage input is a dc voltage input.
4. The drive protection circuit for the high-power semiconductor laser as claimed in claim 1, wherein the fourth resistor is connected with a fifth resistor and a second voltage regulator tube respectively.
5. The drive protection circuit for the high-power semiconductor laser as claimed in claim 1, wherein the other end of the second voltage regulator tube is connected with one end of a third resistor.
6. The drive protection circuit for the high-power semiconductor laser as claimed in claim 1, wherein the G pole of the MOS transistor is connected to one end of the second voltage regulator tube.
7. The drive protection circuit for high power semiconductor laser as claimed in claim 1, wherein the D pole of the MOS transistor is connected to one end of the high power semiconductor laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922079457.7U CN211126439U (en) | 2019-11-27 | 2019-11-27 | High-power semiconductor laser drive protection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922079457.7U CN211126439U (en) | 2019-11-27 | 2019-11-27 | High-power semiconductor laser drive protection circuit |
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| Publication Number | Publication Date |
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| CN211126439U true CN211126439U (en) | 2020-07-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201922079457.7U Active CN211126439U (en) | 2019-11-27 | 2019-11-27 | High-power semiconductor laser drive protection circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111180997A (en) * | 2019-11-27 | 2020-05-19 | 惠州市金百泽电路科技有限公司 | High-power semiconductor laser drive protection circuit |
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2019
- 2019-11-27 CN CN201922079457.7U patent/CN211126439U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111180997A (en) * | 2019-11-27 | 2020-05-19 | 惠州市金百泽电路科技有限公司 | High-power semiconductor laser drive protection circuit |
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